CN205167277U - Twin polishing sapphire wafer's processingequipment - Google Patents
Twin polishing sapphire wafer's processingequipment Download PDFInfo
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- CN205167277U CN205167277U CN201520914080.1U CN201520914080U CN205167277U CN 205167277 U CN205167277 U CN 205167277U CN 201520914080 U CN201520914080 U CN 201520914080U CN 205167277 U CN205167277 U CN 205167277U
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Abstract
The utility model provides a twin polishing sapphire wafer's processingequipment. It includes multi -thread cutting unit, chemical wet etching unit and the periphery chamfer and chemically mechanical polishing unit that sets up on workstation and the workstation, multi -thread cutting unit includes descent means and the coping saw that can move, and it has the diamond granule to adhere to on the coping saw, waits to process the work piece and places on descent means, and chemical wet etching unit includes anchor clamps, diamond resin grinding wheel and polishing wandering star wheel including the crucible that is equipped with slice KOH solid particle, periphery chamfer with the chemically mechanical polishing unit. The utility model discloses can optimize the two processing technology that throw the piece of sapphire, have the process time of shortening, reduce the processing cost, improve advantages such as product yield.
Description
(1) technical field
The utility model relates to a kind of processing technique field of sapphire wafer, is specifically related to a kind of processing unit (plant) of the twin polishing sapphire wafer for window material.
(2) background technology
Sapphire single-crystal is the feature such as hardness is high, wearability good, fragility is large, stable chemical nature owing to having, very difficult to its precision, Ultra-precision Turning.In order to obtain super-smooth surface, Sapphire wafer surface process conventional at present mainly adopts mechanical lapping in conjunction with the method for chemically mechanical polishing.
The object of sapphire wafer mechanical lapping is surface/sub-surface damage layer that removal wafer produces in multi-wire saw process, revises the geometric thickness of wafer, improves the flatness of wafer surface, roughness and angularity.In order to improve the efficiency of wafer mechanical lapping and reduce the thickness of wafer surface damage layer after mechanical lapping, the general method adopting thick, fine lapping to combine.
There is the phenomenons such as working (machining) efficiency is low, sub-surface damage is large, fragile limit in traditional mechanical grinding method, has a strong impact on the follow-up processing of wafer and use.So need badly find a kind ofly obtain high efficiency, the machining process route on high-quality surface overcomes the above problems.
Wet etching utilizes chemical corrosion liquid immersion crystal to reach the object removing plane of crystal material, and technical process is comparatively simple, cost is lower.Current wet etching is mainly used to observe the pattern of dislocation etch pit in crystal and calculates dislocation density, and this mainly make use of texture reaction rate in chemical corrosion process of existing defects injury region feature fast compared with the complete place of crystal structure.Wet etching reaches the corrosive effect of expection by changing the technological parameter such as etching time, corrosion temperature, and corrosion temperature is higher, reaches etching time needed for identical corrosive effect shorter.In addition corrosion rate is by reaction speed and diffusion velocity joint effect.The comparatively faster place of reaction rate, after reaction continues for some time, by the impact of diffusion, the erosion removal speed in these places can decline gradually, finally lower than the slow place of erosion removal in early stage.Therefore surface smoothness material relatively preferably can be obtained through chemical wet etching.
(3) summary of the invention
The purpose of this utility model is to provide a kind of processing technology can optimizing sapphire double-polished chip, shortens process time, cuts down finished cost, and improves the processing unit (plant) of the twin polishing sapphire wafer of finished product rate.
The purpose of this utility model is achieved in that it comprises multi-wire saw unit, chemical wet etching unit and the periphery chamfering and chemically mechanical polishing unit that workbench and workbench are arranged, multi-wire saw unit comprises lowering means and a scroll saw that can move, scroll saw is attached with diamond particles, workpiece to be processed is placed on lowering means, chemical wet etching unit comprises the crucible that sheet KOH solid particle is housed, and periphery chamfering and chemically mechanical polishing unit comprise fixture, diamond-resin grinding wheel and polishing erratic star wheel.
The utility model also has some technical characteristics like this:
The particle diameter of 1, described diamond-resin grinding wheel is 30 ~ 50 μm, and chamfering amount is 0.08 ~ 0.2mm;
2, it is the polishing fluid that the silicon dioxide gel of 20 ~ 40nm and 80 ~ 120nm is mixed by 1:1 that described polishing erratic star wheel comprises granularity.
When the utility model uses, operating procedure comprises: (1) multi-wire saw: paste on lowering means by sapphire workpiece to be processed (crystal bar or square material), realized the feeding of workpiece by the lowering means of workbench, drive the diamond particles be attached on scroll saw to cut workpiece by the scroll saw of a high-speed motion.
(2) annealing of wafer: sapphire cutting blade is placed in high-temperature annealing furnace by fixture, progressively in-furnace temperature is risen to the highest temperature by staged heating mode, namely first at the uniform velocity intensification 5h makes in-furnace temperature reach 1000 ~ 1100 DEG C, and is incubated constant 1 ~ 3h; And then at the uniform velocity intensification 5h makes in-furnace temperature reach 1600 ~ 1650 DEG C, and be incubated constant 2 ~ 5h.Temperature reduction technology is, makes in-furnace temperature at the uniform velocity be down to room temperature from 1600 ~ 1650 DEG C with the cooling rate not higher than 120 DEG C/h.
(3) wafer chemical wet etching: the crucible that sapphire annealed sheet and chemical wet etching unit are equipped with sheet KOH solid particle is heated to 290 ~ 310 DEG C simultaneously, insulation makes KOH be melted to clarification.Sapphire wafer is placed in KOH melt, immediately takes out wafer after insulation 30 ~ 50min and naturally cool to room temperature.Rinse wafer two surface 5 ~ 10min with clear water after cooling, under ultrasonic vibration environment, priority percent by volume is the watery hydrochloric acid cleaning wafer 10 ~ 20min and washed with de-ionized water 5 ~ 15min of 0.5%.
(4) wafer periphery chamfering: be placed in by sapphire etched sheet on the fixture of periphery chamfering and chemically mechanical polishing unit, it is 30 ~ 50 μm that diamond-resin grinding wheel chooses particle diameter, and rotating speed is 1000m/min, and chamfering amount is 0.08 ~ 0.2mm.
(5) wafer chemically mechanical polishing: the sapphire wafer after chamfering is put in order the polishing erratic star wheel into periphery chamfering and chemically mechanical polishing unit, be mixed and made into polishing fluid with the silicon dioxide gel that granularity is 20 ~ 40nm and 80 ~ 120nm by 1:1, polishing rotating speed, polish pressure and polish temperature control respectively at 40 ~ 60rpm, 350 ~ 550g/cm
2with 40 ~ 50 DEG C.
The beneficial effects of the utility model are:
(1) speed of chemical wet etching and degree controlled.The object that control corrosion rate removes wafer thickness is reached by change corrosion temperature and etching time.
(2) speed of chemical wet etching removal wafer surface/sub-surface damage layer is fast.After chemical wet etching, wafer surface flatness is better simultaneously, and surface damage layer is thinner, can reduce the processing capacity of subsequent chemical-mechanical polishing, improves working (machining) efficiency high.
(3) wafer can not produce new surface damage layer in chemical wet etching process, significantly can reduce the material removal amount of wafer surface in whole process, reduces the reserved allowance of section, improves the utilization rate of material;
(4) wafer is after chemical wet etching, only there is the good KOH of solubility property in surface, the abrasive material that exists in traditional grinding technics and lapping liquid can not be there is to the pollution problem of wafer surface, therefore the wafer after processing is easy to clean up, and only need soak and can clean up with clear water flushing and watery hydrochloric acid.
(4) accompanying drawing explanation
Fig. 1 is the utility model structural representation;
Fig. 2 is sapphire wafer annealing temperature curve figure;
(5) detailed description of the invention
Below in conjunction with drawings and Examples, the utility model is further elaborated.
As Fig. 1, present embodiments provide a kind of processing unit (plant) of twin polishing sapphire square wafer.The present embodiment comprises multi-wire saw unit 3, chemical wet etching unit 2 and periphery chamfering and chemically mechanical polishing unit 1 that workbench and workbench are arranged, multi-wire saw unit 3 comprises lowering means and a scroll saw that can move, scroll saw is attached with diamond particles, workpiece to be processed is placed on lowering means, chemical wet etching unit 2 comprises the crucible that sheet KOH solid particle is housed, and periphery chamfering and chemically mechanical polishing unit 1 comprise fixture, diamond-resin grinding wheel and polishing erratic star wheel.
The technical process of employing method comprises: P1, diamond multi-wire saw: sapphire square material (cross section is the square of 52 × 52mm) is pasted onto on lowering means, the diamond fretsaw that diameter is 0.22mm is used to cut into slices, wherein the middle particle diameter of surface diamond particle is 30 ~ 40nm, and the thickness of cutting blade is 0.08 ~ 0.1mm that the thickness of final polished silicon wafer adds as subsequent corrosion polishing reserves.
P2, annealing of wafer: sapphire cutting blade is put into high-temperature annealing furnace, at the uniform velocity intensification 5h makes in-furnace temperature rise to 1000 DEG C, insulation 2h; And then at the uniform velocity to heat up 5h with the programming rate of 120 DEG C/h, make in-furnace temperature reach 1600 DEG C, insulation 3h; The last 16h that at the uniform velocity lowers the temperature, makes in-furnace temperature be down to room temperature from 1600 DEG C.
P3, wafer chemical wet etching: the crucible that sheet KOH solid particle is housed in the wafer after annealing in process and chemical wet etching unit 2 is heated to 310 DEG C simultaneously.When after the clarification of KOH melt, put into by sapphire wafer wherein, temperature constant is at 310 DEG C and be incubated 30min, naturally cools to room temperature after taking out wafer.Then use the surperficial 5min of clear water continual rinsing wafer two, under ultrasonic vibration environment, priority percent by volume is the watery hydrochloric acid immersion wafer 15min and washed with de-ionized water 10min of 0.5%.
P4, wafer periphery chamfering: be placed in by sapphire etched sheet on the fixture of periphery chamfering and chemically mechanical polishing unit 1, it is 40 μm that diamond-resin grinding wheel chooses particle diameter, and the linear velocity of emery wheel is 1000m/min, and chamfering amount is 0.1mm.
P5, wafer chemically mechanical polishing: put into polishing erratic star wheel in order by sapphire chamfering sheet, two kinds of silica hydrosols that polishing fluid adopts granularity to be respectively 40nm and 110nm mix by 1:1, and polishing disk rotating speed controls at 45rpm, and polish pressure is 450g/cm
2, polish temperature is 45 DEG C.
Above content is the further description done the utility model in conjunction with concrete preferred embodiment, can not assert that this concrete enforcement of the present utility model is only limited to these explanations.For the personnel with field rudimentary knowledge belonging to the utility model, can be easy to change the utility model and revise, these change and amendment all should be considered as belonging to the scope of patent protection that claims that the utility model submits to determine.
Claims (3)
1. the processing unit (plant) of a twin polishing sapphire wafer, it is characterized in that it comprises multi-wire saw unit, chemical wet etching unit and the periphery chamfering and chemically mechanical polishing unit that workbench and workbench are arranged, multi-wire saw unit comprises lowering means and a scroll saw that can move, scroll saw is attached with diamond particles, workpiece to be processed is placed on lowering means, chemical wet etching unit comprises the crucible that sheet KOH solid particle is housed, and periphery chamfering and chemically mechanical polishing unit comprise fixture, diamond-resin grinding wheel and polishing erratic star wheel.
2. the processing unit (plant) of a kind of twin polishing sapphire wafer according to claim 1, it is characterized in that the particle diameter of described diamond-resin grinding wheel is 30 ~ 50 μm, chamfering amount is 0.08 ~ 0.2mm.
3. the processing unit (plant) of a kind of twin polishing sapphire wafer according to claim 1 and 2, it is characterized in that described polishing erratic star wheel comprises granularity is the polishing fluid that the silicon dioxide gel of 20 ~ 40nm and 80 ~ 120nm is mixed by 1:1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520914080.1U CN205167277U (en) | 2015-11-17 | 2015-11-17 | Twin polishing sapphire wafer's processingequipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520914080.1U CN205167277U (en) | 2015-11-17 | 2015-11-17 | Twin polishing sapphire wafer's processingequipment |
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| CN205167277U true CN205167277U (en) | 2016-04-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116871985A (en) * | 2023-09-05 | 2023-10-13 | 河北远东通信系统工程有限公司 | Polishing process of small-size high-frequency piezoelectric wafer |
-
2015
- 2015-11-17 CN CN201520914080.1U patent/CN205167277U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116871985A (en) * | 2023-09-05 | 2023-10-13 | 河北远东通信系统工程有限公司 | Polishing process of small-size high-frequency piezoelectric wafer |
| CN116871985B (en) * | 2023-09-05 | 2023-12-01 | 河北远东通信系统工程有限公司 | Polishing process of small-size high-frequency piezoelectric wafer |
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