CN116864997A - Ultra-wideband low-profile metamaterial wave absorber based on resistive film - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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Abstract
The invention discloses an ultra-wideband low-profile metamaterial wave absorber based on a resistor film, and belongs to the technical field of electromagnetic metamaterials. Comprises a plurality of periodic structure units. The array is formed by extending a plurality of periodic structure units along the plane direction, the periodic structure units are formed by stacking a metal layer arranged at the bottom and three layers of resistor film-medium composite layers, each layer of resistor film-medium composite layer comprises a PET substrate and a PMI foam layer, and the resistor film with a certain structure is printed on the PET substrate; each resistive film surface structure layer is formed by embedding a central substructure and a four-quadrant region substructure; the central substructure is a large square annular resistance diaphragm positioned in the center of the periodic structure unit; the four-quadrant region substructure is four small square annular resistive diaphragms located in the centers of four quadrants of the periodic structure unit. It is ultra-bandwidth, low profile, high absorption and polarization insensitive.
Description
Technical Field
The invention relates to an ultra-wideband low-profile metamaterial wave absorber based on a resistor film, and belongs to the technical field of electromagnetic metamaterials.
Background
With the rapid development of the fields of electronics, communication, aerospace and the like, the demand for high-performance electromagnetic wave absorbing materials is becoming more and more urgent. The wave absorbing performance of the conventional wave absorbing material is affected by the polarization state and frequency of electromagnetic waves, so that different wave absorbing structures need to be specially designed and prepared. In order to solve this problem, in recent years, metamaterial wave absorbers have become one of the hot spots of research. As a novel artificial material, the electromagnetic metamaterial has a plurality of excellent electromagnetic wave characteristics, and can realize accurate control and adjustment of electromagnetic waves.
Narrowband absorption refers to a relatively high absorption capacity of electromagnetic waves in a specific frequency range within a relatively narrow frequency band. A narrow band absorber "Perfect narrow band absorber for sensing applications" based on a metal-dielectric-metal structure designed by Luo S et al was published on Optics Express; a narrow band absorber "Design of a narrow band and wideband absorbers using resistive FSS concept for the X and Ku band application" designed with a resistive frequency selective surface is published in Microwave and Optical Technology Letters by Silva M et al. Recently, the sandwich absorber structure discussed in the IEEE Trans. On nanotechnology, "Transparent Microwave Absorber Based on Patterned Graphene: design, measurement, and Enhancement" enables absorption of the absorber in the 8-18GHz band, which Design concept also permits good broadband absorption of the metamaterial absorber.
Polarization sensitivity of a metamaterial absorber refers to the ability of its absorption properties to vary with the polarization direction of incident electromagnetic waves. A polarization-sensitive metamaterial absorber "Transparent metamaterial absorber with broadband radar cross-section RCS" designed by Kong X et al was published in IET Microwaves Antennas & production; recently, HJing et al published "An ultra-broadband flexible polarization-insensitive microwave metamaterial absorber" on Materials Research Express using a specific structural design polarization insensitive metamaterial absorber provides a viable solution for achieving metamaterial absorber polarization insensitivity.
Studying low profile characteristics can help to design a more compact and lightweight metamaterial absorber to meet space constraints or weight reduction requirements. Araujo B D et al designed a metamaterial absorber with a relatively high profile, "An Ultrathin and Ultrawideband Metamaterial Absorber and an Equivalent-Circuit Parameter Retrieval Method," published on IEEE Transactions on Antennas and Propagation; recently, jiang H et al, in IEEE Antennas and Wireless Propagation Letters, published "A Conformal Metamaterial-based Optically Transparent Microwave Absorber with High Angular Stability," proposed a lower profile metamaterial absorber.
However, the technical problems of the metamaterial absorber are as follows: the absorption broadband needs to be further improved, and the cross section of the metamaterial absorber needs to be further reduced. In addition, the conventional structure has a disadvantage of polarization dependence and no robustness to an incident angle. Therefore, how to design the metamaterial wave absorber meeting the characteristics of wide bandwidth, high absorptivity, insensitive polarization and the like becomes a current research hot spot and difficulty.
Disclosure of Invention
Aiming at the defects of the prior art, the ultra-wideband low-profile metamaterial wave absorber based on the resistive film has the characteristics of ultra-bandwidth, low profile, high absorptivity and insensitive polarization.
In order to achieve the above purpose, the technical scheme provided by the invention is as follows:
the ultra-wideband low-profile metamaterial wave absorber based on the resistive film comprises a plurality of arrays formed by extending periodic structure units along the plane direction, wherein the periodic structure units are formed by stacking a metal layer arranged at the bottom and three resistive film-medium composite layers, and the metal layer is tightly connected with the three resistive film-medium composite layers without gaps; the three layers of the resistor film-medium composite layers comprise a PET substrate and a PMI foam layer which are stacked up and down, and a resistor film surface structure layer with a certain structure is printed on the PET substrate;
wherein:
the ITO resistive film structure printed on the surface of the resistive film surface structure layer has high symmetry, and is axisymmetric about an x axis and a y axis and meets the central symmetry; the ITO resistive film surface structure is formed by embedding a central substructure and a four-quadrant region substructure, the central substructure is a large square annular ITO resistive film positioned in the center of the periodic structure unit, the peripheral side length of the large square annular ITO resistive film is d1=12 mm, the inner peripheral side length is d2=8 mm, and the large square ring is positioned in the center of the periodic structure unit; the four-quadrant region substructure is four small Fang Huanxing ITO resistance diaphragms located at the centers of four quadrants of the periodic structure unit, the peripheral side length of the four small square annular ITO resistance diaphragms is d3=8 mm, the inner peripheral side length of the four small square annular ITO resistance diaphragms is d4=4 mm, and the four small square rings are respectively located at the centers of four quadrants of the periodic structure unit; the spacing distance g1=2 mm between two adjacent small Fang Huanxing ITO resistive films, and the spacing distances between the boundaries of four small square ring ITO resistive films and the boundary of the PET substrate are g2 and g3, g2=1 mm, g3=1 mm respectively.
Further, the thickness of the PET substrate in each of the resistive film-dielectric composite layers was 0.175mm, the dielectric constant was 3.0, and the loss tangent was 0.061.
Further, the thicknesses of PMI foam layers in the three-layer resistor film-medium composite layer are different, the thicknesses from bottom to top are 6.45mm, 3.4mm and 3.9mm respectively, the different thicknesses can realize the absorption effect of the wave absorber on electromagnetic waves in a specific frequency range, and the absorption bandwidth of the wave absorber can be expanded by optimizing the thicknesses of the PMI foam layers; the dielectric constant of the PMI foam layer in each of the resistive film-dielectric composite layers was 1.05, and the loss tangent was 0.001.
Further, the ITO resistive film structures on the surface of each resistive film surface structure layer in the three resistive film-medium composite layers are the same, but the resistance values are different, and the resistance values of the resistive film surface structure layers from bottom to top are respectively: r1=50Ω/sq, r2=150Ω/sq, r3=300Ω/sq.
Further, the material of the metal layer is metallic copper, and the conductivity is sigma=5.8×10 7 S/m, the thickness of the metal layer is 0.02mm.
Further, the preparation method of the ITO resistive film structure of the resistive film surface structure layer comprises the following steps:
firstly, sputtering and generating an ITO resistance film with a large square ring structure at the central position of a PET substrate, wherein the peripheral side length of the large square ring structure is d1=12 mm, and the inner peripheral side length is d2=8 mm; and dividing the PET substrate by utilizing four quadrants, respectively sputtering at the central positions of the four quadrants to generate four ITO resistive films with small square annular structures, wherein the peripheral side length of each small Fang Huanxing ITO resistive film is d3=8 mm, the inner peripheral side length of each small 5225 ITO resistive film is d4=4 mm, the spacing distance between two adjacent small Fang Huanxing ITO resistive films is g1=2 mm, the spacing distances between the outer boundaries of the four small square annular ITO resistive films and the boundary of the PET substrate are g2 and g3, g2=1 mm, g3=1 mm, and the surface structure of the resistive film surface structure layer formed by the large square annular structure and the four small square annular structures.
The beneficial effects are that:
1. the working bandwidth is ultra-wide: the relative bandwidth with the absorptivity more than 90% can be up to 170% through the design of the integral multilayer structure and the design of embedding and combining a plurality of square ring resistor diaphragms on the surface structure of the resistor diaphragm, and meanwhile, the low-profile characteristic is realized, and the thickness is only 0.102 lambda L (λ L Maximum operating wavelength), thereby achieving ultra-wideband absorption;
2. low profile: the overall thickness of the invention is only 0.102 lambda L ,λ L Is the maximum operating wavelength;
3. the absorptivity is high: the invention can realize high absorptivity of 90% or more in the bandwidth of absorption, can stably maintain absorption of 90% or more in the bandwidth of absorption, and has high absorption stability;
4. the wave absorber can realize higher absorptivity to TE and TM waves, well solves the problem of polarization sensitivity of the traditional metamaterial wave absorber, and can meet the requirement of higher absorptivity in an incident angle of 0-50 degrees.
Drawings
Fig. 1 is a schematic three-dimensional structure of a periodic structure unit of an ultra-wideband low-profile metamaterial absorber based on a resistive film in an embodiment of the present invention.
Fig. 2 is a top view of an ultra-wideband low-profile metamaterial absorber based on a resistive film (i.e., a resistive film surface layer structure) in an embodiment of the present invention.
FIG. 3 is a side view of an ultra-wideband low-profile metamaterial absorber based on resistive films in an embodiment of the invention.
FIG. 4 is a diagram showing the |S obtained by modeling and simulating the resistive film-based ultra-wideband low-profile metamaterial absorber in the embodiment of the present invention using CST software 11 Graph of the curve parameters.
Fig. 5 is a graph of absorption at normal incidence for an ultra-wideband low profile metamaterial absorber based on resistive films in an embodiment of the present invention.
Fig. 6 is a graph of absorption rate of an ultra-wideband low-profile metamaterial absorber based on a resistive film at different angles of incidence in a TE mode in accordance with an embodiment of the present invention.
FIG. 7 is a graph showing the absorption rate of an ultra-wideband low-profile metamaterial absorber based on a resistive film at different incident angles in a TM wave mode in an embodiment of the present invention.
In the figure: 1-a surface structure layer of a resistor film, a 2-PET substrate, a 3-PMI foam layer and a 4-metal layer.
The specific embodiment is as follows:
the invention is described in further detail below with reference to the drawings and the detailed description.
The invention provides an ultra-wideband (170% relative bandwidth) low profile (0.102 lambda thick) L ) The metamaterial wave absorber has high absorptivity (90% or more wave absorbing rate is realized in the frequency range of 2.17 GHz-26.77 GHz) and insensitive polarization. The ultra-wideband low-profile metamaterial wave absorber based on the resistive film comprises the following periodic structure units from bottom to top in sequence: the three-layer resistor film-medium composite layer is positioned right above the metal copper layer; each layer of the resistor film-medium composite layer comprises a PET substrate 2 formed by polyethylene terephthalate, a PMI foam layer 3 formed by polymethacrylimide foam and a resistor film surface structure layer 1 formed by ITO resistor films. The thickness of each polymethacrylimide foam layer is different, and the resistance value of the resistance film is different.
The ultra-wideband low-profile metamaterial wave absorber based on the resistive film can obtain larger absorption bandwidth by using the PMI foam layer 3 with a dielectric constant of 1.05 as an intermediate layer, because the PMI foam layer has the characteristics of low dielectric constant and low magnetic permeability, and the characteristics enable electromagnetic waves in air to freely propagate in the wave absorber and to be reflected and scattered repeatedly in the wave absorber, so that energy loss and absorption are promoted; the resistor film can provide stronger resistance, and electromagnetic waves are dissipated in the form of heat energy, so that wave absorption is realized, and the optimal wave absorption effect in a specific frequency band can be realized by changing the resistance value of the resistor film; PET is used as a substrate of each layer of resistor film structure to fix the stability of the resistor film, and the materials have higher dielectric constant and lower loss tangent, so that the electromagnetic performance of the whole structure can be effectively improved.
Examples
The ultra-wideband low-profile metamaterial wave absorber based on the resistive film consists of a plurality of periodic structure units, and one periodic structure unit is selected for analysis.
The periodic structure units of the ultra-wideband low-profile metamaterial wave absorber based on the resistive film are shown in figures 1, 2 and 3. The bottom layer of the integral structure is a metal copper layer 4, a three-layer resistor film-medium composite unit is arranged right above the bottom metal copper layer 4, the resistor film-medium composite unit comprises a poly-pair PET substrate 2, a PMI foam layer 3 and a resistor film surface structure layer 1, wherein the poly-pair PET substrate 2 and the PMI foam layer 3 are arranged up and down, and the resistor film surface structure layer 1 is arranged on the PET substrate 2.
The resistive film surface structure layer 1 of the ultra-wideband low-profile metamaterial wave absorber based on the resistive film is formed by embedding a central substructure and a four-quadrant region substructure in each layer of resistive film-medium composite layer; the central substructure is a large square annular ITO resistive diaphragm positioned in the center of the periodic structure unit; the four-quadrant region substructure is four small square annular resistive diaphragms located in the centers of four quadrants of the periodic structure unit.
The resistive film surface structure layer 1 is symmetrical about the x axis and the y axis and belongs to center symmetry, and has high symmetry, so that the ultra-wideband low-profile metamaterial wave absorber based on the resistive film has good polarization insensitivity.
The bottom metal bottom plate adopts metal copper, and the conductivity of the bottom metal bottom plate is sigma=5.8×10 7 S/m, the thickness of the metallic copper layer 4 is d=0.02 mm.
The thickness tp of the polyethylene terephthalate substrate 2 in the resistive film-dielectric composite layer was 0.175mm, the dielectric constant was ε=3.0, and the loss tangent was tan δ=0.061.
The thickness of the PMI foam layer 3 in the resistive film-dielectric composite layer described in the resistive film surface structure layer is h1=3.9 mm, h2=3.4 mm, h3=6.45 mm from top to bottom as shown in fig. 3, the dielectric constant is epsilon=1.05, and the loss tangent is tan delta=0.001.
The overall thickness of the surface structure layer of the resistor film is 0.102 lambda L (λ L For maximum operating wavelength), low profile characteristics are achieved.
The surface structure layer of the resistor film in each resistor film-medium composite layer is shown in figure 2, and the structural dimension parameters are that the period p=20 mm, the peripheral side length of the large square ring is d1=12 mm, the inner peripheral side length is d2=8 mm, and the large square ring is positioned in the center of the periodic unit structure; the peripheral side length of the four small square rings is d3=8 mm, the inner peripheral side length of the four small square rings is d4=4 mm, and the four small square rings are respectively positioned at the centers of four quadrants of the periodic structure unit; the spacing distance between two adjacent small square rings is g1=2 mm, and the spacing distances between the boundaries of four small square rings of the surface structure of the resistor film and the boundary of the PET substrate layer are g2 and g3, g2=1 mm and g3=1 mm.
The surface structures 1 of the resistive films in each layer of the resistive film-medium composite layer are consistent, but the resistance values of the resistive films are different, and the resistance values of the resistive films from bottom to top are respectively as follows in the view of fig. 3: r1=50Ω/sq, r2=150Ω/sq, r3=300Ω/sq.
FIG. 4 shows the |S obtained by simulating the present invention using CST simulation software 11 The graph of the parameter, the abscissa represents frequency in GHz; the ordinate represents |S 11 The parameter is in dB. S 11 The-10 dB value of the parameter is a critical value, when S 11 When the I parameter is lower than-10 dB, the absorptivity of the ultra-wideband low-profile metamaterial wave absorber based on the resistive film is higher than 90%.
FIG. 5 is a graph of the sum of the absolute values of S 11 The invention base obtained by parameter processingAn absorption rate curve graph of ultra-wideband low-profile metamaterial wave absorber on a resistor film. As can be seen from the figure 5, the ultra-wideband low-profile metamaterial wave absorber based on the resistive film realizes the absorptivity of 90% or more in the frequency range of 2.17-26.77GHz, and has high absorptivity and stability.
The relative bandwidth is 170% calculated from the frequency band with the absorptivity higher than 90% shown in fig. 5, and the ultra-wideband absorption characteristic is realized.
FIG. 6 shows the absorption rate at different angles when the incident wave of the ultra-wideband low-profile metamaterial absorber based on the resistive film is TE wave. It can be seen from fig. 6 that the absorption bandwidth of 90% or more varies little when the incident angle is within 0 ° to 50 °, but the absorption bandwidth has a significant blue shift phenomenon with an increase in the incident angle. This is because as the angle of the incident electromagnetic wave increases, the surface current excited by the incident magnetic field becomes smaller, the current path becomes shorter, and the resonance point moves to a high frequency, and the macroscopic appearance becomes blue-shifted. In general, the ultra-wideband low-profile metamaterial wave absorber based on the resistive film has good wave absorbing effect on electromagnetic waves with different incidence angles when the incident wave mode is TE wave.
FIG. 7 shows the absorption rate at different angles when the incident wave of the ultra-wideband low-profile metamaterial absorber based on the resistive film is in the TM wave mode. From fig. 7, it can be seen that the absorptivity still remains at a level above 80% when the incident angle is 50 °, so that the ultra-wideband low-profile metamaterial wave absorber based on the resistive film has good wave absorbing effect on electromagnetic waves with different incident angles when the incident wave mode is TM wave. In general, the ultra-wideband low-profile metamaterial wave absorber based on the resistive film has polarization insensitivity.
The relative bandwidth of the ultra-wideband low-profile metamaterial wave absorber based on the resistive film reaches 170%, and the working frequency band relates to S, C, X, ku and K wave bands. The ultra-wideband absorption effectively solves the inconvenience brought to practical application due to narrowband absorption, not only widens the application range of the metamaterial absorber, but also lays a foundation for the practical application of the metamaterial absorber.
Claims (6)
1. The ultra-wideband low-profile metamaterial wave absorber based on the resistive film is characterized by comprising a plurality of arrays formed by extending periodic structure units along the plane direction, wherein the periodic structure units are formed by stacking a metal layer arranged at the bottom and three resistive film-medium composite layers, and the metal layer (4) is tightly connected with the three resistive film-medium composite layers without gaps; the three layers of the resistor film-medium composite layers comprise a PET substrate (2) and a PMI foam layer (3) which are stacked up and down, and a resistor film surface structure layer (1) with a certain structure is printed on the PET substrate (2);
wherein:
the ITO resistive film structure printed on the surface of the resistive film surface structure layer (1) has high symmetry, and is axisymmetric about an x axis and a y axis and meets the central symmetry; the ITO resistive film surface structure is formed by embedding a central substructure and a four-quadrant region substructure, the central substructure is a large square annular ITO resistive film positioned in the center of the periodic structure unit, the peripheral side length of the large square annular ITO resistive film is d1=12 mm, the inner peripheral side length is d2=8 mm, and the large square ring is positioned in the center of the periodic structure unit; the four-quadrant region substructure is four small Fang Huanxing ITO resistance diaphragms located at the centers of four quadrants of the periodic structure unit, the peripheral side length of the four small square annular ITO resistance diaphragms is d3=8 mm, the inner peripheral side length of the four small square annular ITO resistance diaphragms is d4=4 mm, and the four small square rings are respectively located at the centers of four quadrants of the periodic structure unit; the spacing distances between two adjacent small Fang Huanxing ITO resistive films, g1=2 mm, and the spacing distances between the boundaries of the four small square ring ITO resistive films and the boundary of the PET substrate (2) are g2 and g3, g2=1 mm, g3=1 mm respectively.
2. The resistive film-based ultra-wideband low-profile metamaterial absorber according to claim 1, wherein the thickness of the PET substrate (2) in each resistive film-dielectric composite layer is 0.175mm, the dielectric constant is 3.0, and the loss tangent is 0.061.
3. The ultra-wideband low-profile metamaterial wave absorber based on the resistive film according to claim 1, wherein the thicknesses of the PMI foam layers (3) in the three-layer resistive film-medium composite layer are different, the thicknesses from bottom to top are respectively 6.45mm, 3.4mm and 3.9mm, the absorption effect of the wave absorber on electromagnetic waves in a specific frequency range can be realized by the different thicknesses, and the absorption bandwidth of the wave absorber can be expanded by optimizing the thickness of each PMI foam layer (3); the dielectric constant of the PMI foam layer (3) in each of the resistive film-dielectric composite layers was 1.05, and the loss tangent was 0.001.
4. The ultra-wideband low-profile metamaterial wave absorber based on a resistor film according to claim 1, wherein the ITO resistor film structures on the surface of each resistor film surface structure layer (1) in the three resistor film-medium composite layers are the same, but the resistance values are different, and the resistance values of the resistor film surface structure layers (1) from bottom to top are respectively: r1=50Ω/sq, r2=150Ω/sq, r3=300Ω/sq.
5. Ultra-wideband low-profile metamaterial absorber based on resistive film as claimed in claim 1, wherein the material of the metal layer (4) is metallic copper with conductivity σ = 5.8 x 10 7 S/m, the thickness of the metal layer (4) is 0.02mm.
6. The ultra-wideband low-profile metamaterial wave absorber based on the resistive film according to claim 1, wherein the preparation method of the ITO resistive film structure of the resistive film surface structure layer (1) is as follows:
firstly, sputtering and generating an ITO resistance film with a large square ring structure at the central position of a PET substrate (2), wherein the peripheral side length of the large square ring structure is d1=12 mm, and the inner peripheral side length is d2=8 mm; and dividing the PET substrate (2) by utilizing four quadrants, sputtering to generate four ITO resistive films with small square ring structures at the central positions of the four quadrants respectively, wherein the peripheral side length of each small Fang Huanxing ITO resistive film is d3=8 mm, the inner peripheral side length of each small Fang Huanxing ITO resistive film is d4=4 mm, the spacing distance between two adjacent small Fang Huanxing ITO resistive films is g1=2 mm, the spacing distances between the outer boundaries of the four small square ring ITO resistive films and the boundary of the PET substrate are g2 and g3, g2=1 mm, g3=1 mm, and the surface structure of the resistive film surface structure layer (1) formed by the large square ring structure and the four small square ring structures.
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| CN117559141A (en) * | 2023-11-01 | 2024-02-13 | 广东技术师范大学 | Transparent broadband metamaterial wave absorber based on topological optimization and preparation method thereof |
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