CN116864377A - Taihe wafer processing method - Google Patents
Taihe wafer processing method Download PDFInfo
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- CN116864377A CN116864377A CN202311127770.8A CN202311127770A CN116864377A CN 116864377 A CN116864377 A CN 116864377A CN 202311127770 A CN202311127770 A CN 202311127770A CN 116864377 A CN116864377 A CN 116864377A
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- 238000003672 processing method Methods 0.000 title claims description 11
- 238000005520 cutting process Methods 0.000 claims abstract description 83
- 238000011010 flushing procedure Methods 0.000 claims abstract description 80
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000007664 blowing Methods 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000012530 fluid Substances 0.000 claims abstract description 22
- 239000007921 spray Substances 0.000 claims description 34
- 239000007788 liquid Substances 0.000 claims description 28
- 238000001179 sorption measurement Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 13
- 238000005406 washing Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 37
- 230000000694 effects Effects 0.000 abstract description 11
- 230000009471 action Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 134
- 230000009466 transformation Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for processing a tai-drum wafer, which comprises the steps of firstly processing a cutting channel and an inner area thereof during flushing and blowing, and then performing full-size processing, so that dirt in the cutting channel and the inner area thereof can be firstly moved to an edge position and separated from the tai-drum wafer under the action of high-speed centrifugal force, and meanwhile, the cutting channel and the inner area thereof can be ensured to be mainly cleaned. Compared with single water flushing, the flushing effect of adopting the water vapor two fluid is better; through the combination of the modes, the cleaning quality of the wafer in different states is effectively ensured.
Description
Technical Field
The invention relates to the field of semiconductor device processing, in particular to a method for processing a wafer by using a Taihe drum.
Background
After the wafer is cut, the wafer needs to be cleaned, so that proper conditions are provided for the subsequent process.
The apparatus and method disclosed in chinese invention patent application CN114551303a may be employed for cleaning after ring cutting.
The method can meet the cleaning quality requirement on the normal too-drum wafer. However, the film 703 and the wafer body 704 of the normal tai drum wafer are tightly adhered, and there is no gap or a small gap 705 between the inner top corner of the wafer body 704 and the film 703, and after circular cutting, the gap 705 is located outside the dicing street 701, as shown in fig. 1. Thus, no slag, dirt and the like enter the gap during cutting and cleaning.
However, during actual processing, the film 703 and the wafer main body 704 may be adhered irregularly, at this time, the gap 705 between the inner vertex angle positions of the film 703 and the wafer main body 704 may extend to the inner side of the dicing channel 701, as shown in fig. 2, when dicing and cleaning are performed, dirt such as slag, water vapor, etc. may enter into the gap, and the cleaning quality of the wafer of the above-mentioned prior art cannot be ensured.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a method for processing a wafer by using a Taiwan drum.
The aim of the invention is achieved by the following technical scheme:
the wafer processing method comprises the following steps:
s1, placing the wafer subjected to circular cutting on a vacuum adsorption table;
s2, flushing the cutting channel and the inner area of the wafer of the Taihe drum for a first time period through a flushing head; when the wafer is washed, the wafer rotates at a first speed, a swing arm where the washing head is located swings back and forth at a second speed, and the washing head sprays water and air two fluids to the wafer;
s3, flushing the whole top surface of the Taihe drum wafer for a second time period through the flushing head; when in flushing, the too-drum wafer rotates at a third speed which is smaller than the first speed, the swing arm swings back and forth at a fourth speed which is larger than the second speed, and the flushing head sprays two fluids of water and air to the too-drum wafer;
s4, blowing air for a third time period to the cutting channel and the inner area of the cutting channel through a blowing head; when blowing, the tai drum wafer rotates at a fifth speed, and the swing arm swings at a sixth speed;
s5, blowing air for a fourth time period to the whole top surface of the Taihe drum wafer through a blowing head; when blowing, the tai drum wafer rotates at a fifth speed, and the swing arm swings at a seventh speed which is greater than the sixth speed;
s6, enabling the Taihe wafer to spin and dry in a rotating mode;
and S7, taking the dried tai drum wafer out of the vacuum adsorption table.
Preferably, the liquid outlet end of the flushing head is arranged obliquely downwards, and an included angle between the axis of the liquid outlet end and a projection line of the axis of the liquid outlet end on the side surface of the swing arm is 10 degrees plus or minus 2 degrees.
Preferably, the water-gas converging block connected with the flushing head is arranged on the side surface of the swing arm through a wedge block, and an included angle of 10+/-2 degrees is kept between the installation surface of the flushing head and the connection surface of the wedge block for connecting with the swing arm.
Preferably, in the step S2, the first speed is between 1450 and 1550 rpm, the second speed is 0.8 rpm, and the first duration is 10 seconds;
in the step S3, the third speed is between 1000 and 1200 revolutions per minute, the fourth speed is 1 revolution per minute, and the second duration is 20 seconds.
Preferably, in the step S4, the fifth speed is between 1450 and 1550 rpm, the sixth speed is 1 rpm, and the third duration is 10 seconds;
in the step S5, the seventh speed is 2 rpm, and the fourth period of time is 20 seconds.
Preferably, when the wafer is cut, water is sprayed from the side part of the cutter to a cutting channel formed by cutting the cutter in real time through a first spray hole on the water spraying block.
Preferably, the number of the first spray holes is two, the first spray holes are symmetrically distributed on two sides of the cutter, and the intersection point of water columns sprayed by the first spray holes is opposite to a cutting channel formed by the cutter in real time and is positioned at the upper port of the cutting channel.
Preferably, in the circular cutting process, the second spray holes arranged on the water curtain are used for flushing the two side areas, close to the two ends of the water curtain, of the positions, on the cutting table, of the wafer to be cut to form the cutting channels.
The wafer processing method comprises the following steps:
s10, placing the wafer subjected to circular cutting on a vacuum adsorption table;
s20, in the process that a flushing head moves from one side of a cutting channel of a too-drum wafer to the other side of the cutting channel, the flushing head flushes the too-drum wafer, when flushing, the too-drum wafer rotates at a first speed, a swing arm where the flushing head is located swings at a second speed, and the flushing head sprays two water-gas fluids to the too-drum wafer;
s30, enabling the flushing head to flush the whole top surface of the too-drum wafer for a second time period, wherein when in flushing, the too-drum wafer rotates at a third speed smaller than the first speed, the swing arm swings back and forth at a fourth speed larger than the second speed, and the flushing head sprays two water-gas fluids to the too-drum wafer;
s40, in the process that the blowing head moves from one side of the cutting channel to the other side of the cutting channel, the blowing head blows the too-drum wafer, when blowing, the too-drum wafer rotates at a fifth speed, and the swing arm swings at a sixth speed;
s50, blowing the whole top surface of the too-drum wafer for a fourth time period by the blowing head, wherein the too-drum wafer rotates at a fifth speed during blowing, and the swing arm swings at a seventh speed which is greater than the sixth speed;
s60, spin-drying the tai drum wafer;
and S70, taking the dried tai drum wafer out of the vacuum adsorption table.
Preferably, the liquid outlet end of the flushing head is arranged obliquely downwards, the included angle between the axis of the liquid outlet end and the projection line of the axis of the liquid outlet end on a projection surface is 10 degrees+/-2 degrees, the projection surface is a plane overlapped with the side surface of the swing arm, and the intersection point of the axis of the liquid outlet end and the projection surface is positioned above the flushing head;
the flushing head is arranged at the front side of the swing arm, and when the swing arm is at the initial position, the flushing head is positioned at the outer side of the vacuum adsorption table, and the front side of the swing arm faces the vacuum adsorption table.
The technical scheme of the invention has the advantages that:
when the method is used for flushing and blowing, the cutting channel and the inner area thereof are firstly treated, and then the cutting channel and the inner area thereof are treated in a full-size manner, so that dirt in the cutting channel and the inner area thereof can be firstly moved to the edge position and separated from the too-drum wafer under the action of high-speed centrifugal force, the cutting channel and the inner area thereof can be ensured to be cleaned mainly, and when the cutting channel and the inner area thereof are treated, the swinging speed of the swinging arm is lower than the swinging speed during normal flushing and blowing and the rotating speed of the too-drum wafer is higher than the speed during normal flushing and blowing, the lower swinging speed can effectively increase the probability of taking sundries and accumulated water away from a gap, and the higher rotating speed also ensures better centrifugal separation effect, thereby effectively improving the cleaning quality. Furthermore, during flushing, water-air two fluid is adopted for flushing, so that the flushing effect of the water-air two fluid is better than that of the single water flushing; through the combination of the modes, the cleaning quality of the Taihe wafers in different states is effectively ensured.
According to the invention, the liquid outlet end of the flushing head is obliquely designed and combined with a specific oblique angle design, so that the water-gas fluid can be smoothly driven into the cutting channel during cleaning, and the water-gas fluid driven into the cutting channel can form vortex in the gap between the film and the wafer main body, so that dirt in the gap is more easily brought out of the gap, and the dirt cleaning effect in the gap is effectively improved. Meanwhile, when the washing head is used for washing in a vertical state, and the water vapor two fluid sprayed by the washing head has a forward trend, so that forward thrust can be applied to the dirt on the too-drum wafer to accelerate the dirt to move forward and reduce the situation that the dirt is scattered around, and the dirt can be pushed forward more easily and washed away from the too-drum wafer; in addition, the inclined water-gas fluid can have a certain shearing effect, so that stubborn stains and the too-drum wafers can be better stripped, and the cleaning quality and the cleaning efficiency are improved. And the wedge blocks are adopted for mounting the flushing head, so that the angle of the flushing head can be accurately controlled, and meanwhile, the assembly and the debugging are convenient.
According to the invention, through the design of the rotating speed of the tai drum wafer, the swinging speed of the swinging arm and the time length of each step, the cleaning quality of the normal tai drum wafer and the abnormal tai drum wafer can meet the requirements under the condition of not influencing the cleaning efficiency.
According to the invention, in the circular cutting process of the Taihe drum wafer, the real-time cleaning step of the cutting channel is increased, the dirt amount of the Taihe drum wafer before entering the cleaning device can be reduced through pre-cleaning, especially the dirt amount at the cutting channel and the gap can be reduced, the time required by the subsequent cleaning is reduced, the subsequent cleaning quality is ensured, and the impact force can be increased by arranging two symmetrical first spray holes on two sides of the cutting channel and enabling water columns sprayed by the first spray holes to intersect at the upper port of the cutting channel, and meanwhile, the liquid sprayed into the cutting channel can form vortex, so that the dirt at the cutting channel and the gap can be better carried out, and the cleaning effect is improved.
In the circular cutting process, the second spray holes are added on the water curtain, so that the two side areas, close to the two ends of the water curtain, of the positions where the cutting channels are formed on the Taihe drum wafer can be washed during cutting, the dirt quantity of the cutting channel areas is reduced, and favorable conditions are provided for the improvement of the subsequent cleaning efficiency and quality.
Drawings
FIG. 1 is a partial cross-sectional view of a normal Taiwan wafer after circular dicing as described in the background;
FIG. 2 is a partial cross-sectional view of an abnormal Taiwan wafer with non-canonical film and wafer body bond described in the background;
FIG. 3 is a partial perspective view of a cleaning device used in the present invention;
FIG. 4 is a schematic view of the range of motion of the rinse head in S2 of the present invention;
FIG. 5 is a schematic view showing the movement range of the rinse head in the S3 of the present invention;
FIG. 6 is a perspective view of the rinse head of the present invention disposed obliquely to the swing arm by a wedge;
FIG. 7 is a schematic view of a wedge of the present invention;
FIG. 8 is a schematic structural view of the present invention for flushing the cutting path formed in real time by the cutter through the first spray hole on the water spray block during the circular cutting process;
FIG. 9 is a schematic view of the structure of the present invention for flushing the two side areas by a water curtain during the circular cutting process;
FIG. 10 is a partial schematic view of the water curtain of the present invention;
fig. 11 is a schematic diagram of a moving range and a moving direction of the rinse head in S20 of the present invention, wherein a dotted arrow indicates the moving direction of the rinse head and a solid arrow indicates the rotation direction of the wafer.
Detailed Description
The objects, advantages and features of the present invention are illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of the technical scheme of the invention, and all technical schemes formed by adopting equivalent substitution or equivalent transformation fall within the scope of the invention.
In the description of the embodiments, it should be noted that the positional or positional relationship indicated by the terms such as "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in the specific orientation, and thus are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1
The method of processing a tai-gu wafer according to the present invention will be described with reference to the accompanying drawings, and may be based on a known tai-gu wafer processing apparatus, for example, a structure disclosed in the grant publication CN 114582713B. Of course, in other embodiments, the tai-drum wafer processing apparatus may be a separate cleaning device for performing the cleaning of the tai-drum wafer after the dicing, where the cleaning device may use the cleaning structure disclosed in the above-mentioned prior patent, and in this case, a manual or automatic apparatus may be used to move the tai-drum wafer 700 into and out of the cleaning device.
Compared with the existing cleaning device, the invention adopts the water-gas two-fluid for flushing in order to have better cleaning effect. Specifically, as shown in fig. 3, the cleaning device includes a rotating shaft 100 rotatably disposed beside the vacuum adsorption table, the rotating shaft 100 is connected to a mechanism (not shown in the drawing) for driving the rotating shaft 100 to rotate, a swing arm 200 is disposed at an upper end of the rotating shaft 100, the swing arm 200 includes a first plate 210, a second plate 220 and a third plate 230 that are sequentially bent, the first plate 210 and the second plate 220 form an obtuse angle, the second plate 220 and the third plate 230 form an obtuse angle, one end of the first plate is connected to the rotating shaft 100, the second plate is connected to the other end of the first plate and is bent in a direction deviating from the rotating shaft, one end of the third plate 230 connected to the second plate is further bent in a direction deviating from the rotating shaft, the side of the third plate 230 is provided with a cleaning head 300, and the cleaning head may be disposed at any side of the third plate 230. Of course, the swing arm may be of other possible shapes, and is not limited herein.
As shown in fig. 3, the flushing head 300 is disposed at the bottom of the water-gas converging block 400, the water-gas converging block 400 is disposed at the side of the third plate 230, which is biased towards the rotating shaft 100, a T-shaped or Y-shaped converging flow passage is formed on the water-gas converging block 400, a first end of the converging flow passage is disposed at the top of the water-gas converging block 400 and is connected with a first joint 401, a second end of the converging flow passage is disposed at the side of the water-gas converging block 400 and is connected with a second joint 402, and a third end of the converging flow passage is disposed at the bottom of the water-gas converging block 400 and is connected with the flushing head 300. One of the first joint 401 and the second joint 402 is connected with a liquid supply pipeline, and the other is connected with a gas supply pipeline.
As shown in fig. 3, the third plate 230 is further provided with a fixing block 500 located inside the water-gas converging block 400, the fixing block 500 is provided with a blowing head 600, the blowing head 600 is connected with a gas supply pipeline, and a gas outlet end of the blowing head 600 faces downward and is oriented to the lower side of the flushing head 300.
The method for processing the wafer comprises the following steps:
s1, placing the annular-cut Taihe drum wafer 700 on a vacuum adsorption table, wherein the Taihe wafer 700 and the vacuum adsorption table are in a concentric or nearly concentric state at the moment, and after the fact that the Taihe wafer 700 is arranged on the vacuum adsorption table is determined, the Taihe wafer 700 is adsorbed and fixed by the vacuum adsorption table.
S2, as shown in FIG. 4, the dicing street 701 of the wafer 700 and the area in the dicing street 701 are rinsed by the rinse head 300 for a first time period; during rinsing, the tai-drum wafer 700 rotates at a first speed, the swing arm 200 where the rinsing head 300 is located swings reciprocally at a second speed, and the rinsing head 300 sprays two fluids of water and air to the tai-drum wafer 700.
Specifically, when the rinse head 300 swinging to the vacuum adsorption table from the initial external position at the outer side of the vacuum adsorption table is abutted against the left lower side outer edge of the cutting channel 701 or the rinse head is opposite to the cutting channel, the air supply pipeline and the water supply pipeline simultaneously supply water, and the swing arm 200 continues to swing toward the center of the wafer, after the rinse head 300 moves to the center of the tai drum wafer 700, the swing arm 200 can swing reversely to enable the rinse head 300 to move back to the left lower side edge of the tai drum wafer 700 again, and then the swing arm 200 swings toward the center of the wafer again, such as repeatedly. Of course, in other embodiments, the swing arm 200 may also swing the rinse head from one side of the cutting lane to the other side of the cutting lane. During flushing, the rotation direction of the tai drum wafer can be designed according to the requirement.
S3, as shown in FIG. 5, the whole top surface of the Taihe drum wafer is washed for a second time period through the washing head 300; during rinsing, the tai-drum wafer 700 rotates at a third speed smaller than the first speed, the swing arm 200 swings reciprocally at a fourth speed greater than the second speed, and the rinsing head 300 sprays the water and the air to the tai-drum wafer 700.
If the step S2 is completed, the rinse head 300 is located at the center of the wafer, and in the step S3, the swing arm 200 may swing toward the edge of the wafer frame 702 according to the determined process parameters and perform rinsing, after the rinse head 300 swings to the edge of the wafer frame 702, the swing arm 200 swings reversely to perform rinsing, and after the rinse head 300 swings again to the center of the wafer, the swing arm 200 switches the swing direction again, so that the full-size coverage rinsing is completed repeatedly.
If the step S2 is completed, the rinse head 300 is located at the outer edge of the scribe line 701, so that the swing arm 200 may continue to swing to the edge of the wafer outer frame 702, and then the swing arm 200 is controlled to swing reciprocally according to the process parameters determined in the step S3 to perform the rinse. When the wafer is in reciprocating oscillation, the flushing head can oscillate between the cutting channel and the wafer center and also can oscillate between two sides of the cutting channel.
S4, blowing air into the cutting channel 701 and the area in the cutting channel 701 for a third time period through the blowing head 600; when blowing, the tai drum wafer 700 rotates at a fifth speed, and the swing arm 200 swings at a sixth speed.
The specific process of this step can refer to S2 above, and the difference is that: in this step, the rinse head 300 does not spray the two fluids, but supplies air to the blowing head 600 through the air supply line, so that the blowing head 600 blows air to the wafer 700.
S5, blowing air to the whole top surface of the Taihe drum wafer for a fourth time period through a blowing head 600; when blowing, the tai drum wafer 700 rotates at a fifth speed, and the swing arm 200 swings at a seventh speed greater than the sixth speed.
The specific process of this step can refer to S3 above, and the difference is that: in this step, the rinse head 300 does not spray the two fluids, but supplies air to the blowing head 600 through the air supply line, so that the blowing head 600 blows air to the wafer 700.
S6, spin-drying the tai drum wafer 700.
And S7, taking the dried tai-drum wafer 700 out of the vacuum adsorption table, wherein in the S7, when the dried tai-drum wafer 700 is removed from the vacuum adsorption table, the vacuum adsorption table blows air to the bottom surface of the tai-drum wafer 700, so that the problem of inconvenience in taking out caused by the fact that the tai-drum wafer 700 is adsorbed on the vacuum adsorption table can be effectively reduced.
In order to ensure compatibility of cleaning quality and efficiency, in the step S2, the first speed is between 1450 and 1550 rpm, the first speed is most preferably 1500 rpm, the second speed is 0.8 rpm, and the first time period is 10 seconds. In the step S3, the third speed is between 1000 and 1200 revolutions per minute, the third speed is optimally 1200 revolutions per minute, the fourth speed is 1 revolution per minute, and the second duration is 20 seconds. In the step S4, the fifth speed is between 1450 and 1550 revolutions per minute, the first speed is 1500 revolutions per minute, the sixth speed is 1 revolution per minute, and the third duration is 10 seconds; in the step S5, the seventh speed is 2 rpm, and the fourth period of time is 20 seconds. In the step S6, the rotation speed of the tai drum wafer 700 is 1500 rpm, and the time is 30S.
Example 2
This embodiment is identical to the overall process of embodiment 1 described above, except that: as shown in fig. 6, the liquid outlet end of the flushing head 300 is disposed obliquely downward, an included angle between an axis of the liquid outlet end and a projection line of the axis of the liquid outlet end on a projection plane is 10 ° ± 2 °, the projection plane is a plane overlapped with a side surface of the swing arm, and an intersection point of the axis of the liquid outlet end and the projection plane is located above the flushing head.
In particular, as shown in fig. 6 and fig. 7, the water-air converging block 400 connected with the flushing head 300 is disposed on the side surface of the swing arm 200 through a wedge block 800, an included angle of 10 ° ± 2 ° is maintained between a mounting surface 802 of the flushing head 300 and a connection surface 801 of the wedge block 800 for connecting with the swing arm 200, and is most preferably 10 °, the connection surface 801 is attached to the side surface of the swing arm 200, and an upper end of the mounting surface 802 is closer to the swing arm 200 than a lower end thereof, at this time, an included angle between an axis of a liquid outlet end of the flushing head 300 and a vertically extending line is 10 ° ± 2 °. Meanwhile, a first connection hole 803 perpendicular to the connection surface 801 and a second connection hole perpendicular to the installation surface 802 are formed in the wedge block 800, and the first connection hole 803 is a counter bore or a screw hole for connecting the wedge block 800 with the swing arm 200. The second connecting hole is used for fixing the wedge block 800 and the water-gas converging block 400, and the side surface of the water-gas converging block is provided with at least one plane matched with the mounting surface 802.
The liquid outlet end of the flushing head 300 is inclined and the inclination angle is designed in consideration of the following: when the liquid outlet end of the flushing head 300 is right opposite to the lower side, dirt in the gap is not easy to be flushed out. The water vapor fluid can smoothly enter the cutting channel by adopting an inclined mode and combining an angle design, and meanwhile, the water vapor fluid entering the gap can form vortex, so that dirt is better brought out of the gap. Meanwhile, the obliquely sprayed water column can have larger forward thrust, and dirt can be effectively pushed forward to the edge of the too-drum wafer 700 so as to be thrown off the too-drum wafer 700 under high-speed rotation. The water column is inclined to the dirt, so that the stubborn dirt adhering to the wafer main body 704 and the film 703 is more easily peeled off from the dirt than the dirt directly above, and the washing effect is improved.
When the swing arm is in the initial position, the side surface of the swing arm, which is positioned at the outer side of the vacuum adsorption table and faces the vacuum adsorption table, is defined as a front side surface, and the side surface of the swing arm, which is away from the vacuum adsorption table, is a rear side surface.
When the rinse head is disposed on the swing arm through the wedge, as shown in fig. 6, if the rinse head is disposed on the rear side of the swing arm, at this time, in S2, the rinse head 300 may be moved to the wafer center position first when time allows, and then rinsing is started, and during rinsing, the swing arm swings reversely until the rinse head moves to the dicing channel, and then the swing arm switches the swing direction again, so that the effect of the rinse head 300 that dirt is pushed forward can be better exerted.
Of course, the rinse head 300 may also be disposed at the front side of the swing arm, and at this time, the rinse head may perform the rinse when moving from one side of the dicing lane to the center of the wafer or the other side of the dicing lane.
Example 3
In order to further ensure the cleaning quality of the tai drum wafer 700 based on the above embodiments 1 and 2, an additional cleaning step is added in the ring cutting process in this embodiment.
As shown in fig. 8, when the tai-gu wafer 700 is circular-cut, water is sprayed to the tai-gu wafer and the cutter by the water spraying block 900, and at this time, water is not sprayed to the dicing lane formed by the real-time dicing. Therefore, in the present embodiment, water is sprayed from the side of the cutter 001 to the cutting path 701 formed by cutting the cutter 001 in real time through the first spray hole 901 on the water spray block 900. The two first spray holes 901 are symmetrically distributed on two sides of the cutter 001, and the intersection point of the water column 902 sprayed by the two first spray holes is opposite to the cutting path formed by the cutter in real time and is positioned at the upper port of the cutting path.
As shown in fig. 9, during circular cutting, the water curtain 002 is used to spray the tai drum wafer 700 on the cutting table, but the water curtain 002 is not used to spray the two side areas 706 near the two ends of the water curtain in the position where the tai drum wafer should be cut to form the cutting path. The specific range of the two side areas 706 near the two ends of the water curtain in the position where the dicing channel should be formed on the tai-drum wafer can be designed according to the need, which is not limited herein.
In order to improve the cleaning effect and reduce the possible dirt at the cutting path and the gap, as shown in fig. 10, a second nozzle 003 is disposed on the water curtain 002, the second nozzle 003 is disposed above the original row of water nozzles 004 on the water curtain 002, the number of the second nozzles 003 in each group is 3 and corresponds to one position of the two side areas 706, and the aperture of the second nozzle 003 is smaller than the aperture of the water nozzles 004, meanwhile, the second nozzle is disposed above the middle height of the water curtain, so that the water column sprayed by the second nozzle can have a larger impact force and a larger spraying distance to ensure that the two side areas 706 can be flushed.
Example 4
The present embodiment discloses another possible way of processing a wafer by using a tai drum, and the main difference of the present embodiment is: the process of flushing and blowing the cut line 701 and its inner region is performed.
Specifically, the method for processing the tai drum wafer comprises the following steps:
s10, placing the ring-cut Taihe drum wafer 700 on a vacuum adsorption table;
s20, as shown in fig. 11, in the process that the rinse head 300 moves from one side of the scribe line 701 of the tai-drum wafer 700 to the other side of the scribe line 701, the rinse head 300 washes the tai-drum wafer 700, when the tai-drum wafer 700 rotates at a first speed, the swing arm 200 where the rinse head 300 is located swings at a second speed, and the rinse head 300 sprays the water and the air to the tai-drum wafer 700.
And S30, enabling the flushing head 300 to swing between one side of the wafer outer frame 702 and the other side of the wafer outer frame 702 or the wafer center and flushing the too-drum wafer 700 for a second time period, wherein when the top surface of the too-drum wafer is flushed, the too-drum wafer 700 rotates at a third speed smaller than the first speed, the swing arm 200 swings back and forth at a fourth speed larger than the second speed, and the flushing head 300 sprays two water and gas fluids to the too-drum wafer 700.
S40, as shown in fig. 11, in the process that the blowing head 600 moves from one side of the dicing lane 701 to the other side of the dicing lane 701, the blowing head 600 blows the tai-drum wafer 700, and when blowing, the tai-drum wafer 700 rotates at the fifth speed, and the swing arm 200 swings at the sixth speed.
And S50, enabling the blowing head 600 to move between one side of the wafer outer frame 702 and the other side of the wafer outer frame 702 or the wafer center and blowing the too-drum wafer 700 for a fourth time period, wherein the top surface of the too-drum wafer can be subjected to full-face coverage blowing, when blowing, the too-drum wafer 700 rotates at a fifth speed, and the swing arm 200 swings at a seventh speed which is greater than the sixth speed.
And S60, spin-drying the tai drum wafer 700.
And S70, taking the dried tai drum wafer 700 out of the vacuum adsorption table.
In S20 and S40 of the present embodiment, the swing arm 200 swings in only one direction, not reciprocally, as shown in fig. 11, that is, the swing arm 200 swings the flushing head 300 and the blowing head 600 directly from the lower left side to the right side of the cutting tunnel 701, not reciprocally. Meanwhile, when the rinse head 300 and the blow head 600 swing to the other side of the cutting path 701, if the processing time is not yet reached, the rinse head 300 and the blow head 600 may be stopped at the other side of the cutting path 701 and the cutting path may be rinsed and blown, so that the cutting path 701 may be cleaned in a targeted manner, thereby improving the cleaning effect.
More preferably, as in the above embodiment 2, in this embodiment, the liquid outlet end of the flushing head 300 is disposed obliquely downward, an included angle between an axis of the liquid outlet end and a projection line of the axis of the liquid outlet end on a projection plane is between 10 ° ± 2 °, the projection plane is a plane coinciding with a side surface of the swing arm, an intersection point of the axis of the liquid outlet end and the projection plane is located above the flushing head, and the flushing head is disposed at a front side surface of the swing arm.
At this time, in S20, the rotation direction of the tai-drum wafer 700 is matched with the swinging direction of the swing arm 200, as shown in fig. 11, when the tai-drum wafer 700 rotates clockwise, the swing arm 200 swings clockwise, so that the centrifugal force of the tai-drum wafer 700 rotating and the thrust of the water column ejected by the rinse head 300 on the dirt are combined and overlapped, and the dirt is more easily thrown away from the tai-drum wafer 700.
The invention has various embodiments, and all technical schemes formed by equivalent transformation or equivalent transformation fall within the protection scope of the invention.
Claims (10)
1. The method for processing the wafer is characterized by comprising the following steps of:
s1, placing the wafer subjected to circular cutting on a vacuum adsorption table;
s2, flushing the cutting channel and the inner area of the wafer of the Taihe drum for a first time period through a flushing head; when the wafer is washed, the wafer rotates at a first speed, a swing arm where the washing head is located swings back and forth at a second speed, and the washing head sprays water and air two fluids to the wafer;
s3, flushing the whole top surface of the Taihe drum wafer for a second time period through the flushing head; when in flushing, the too-drum wafer rotates at a third speed which is smaller than the first speed, the swing arm swings back and forth at a fourth speed which is larger than the second speed, and the flushing head sprays two fluids of water and air to the too-drum wafer;
s4, blowing air for a third time period to the cutting channel and the inner area of the cutting channel through a blowing head; when blowing, the tai drum wafer rotates at a fifth speed, and the swing arm swings at a sixth speed;
s5, blowing air for a fourth time period to the whole top surface of the Taihe drum wafer through a blowing head; when blowing, the tai drum wafer rotates at a fifth speed, and the swing arm swings at a seventh speed which is greater than the sixth speed;
s6, enabling the Taihe wafer to spin and dry in a rotating mode;
and S7, taking the dried tai drum wafer out of the vacuum adsorption table.
2. The tai-drum wafer processing method according to claim 1, characterized in that: the liquid outlet end of the flushing head is obliquely downwards arranged, and the included angle between the axis of the liquid outlet end and the projection line of the axis of the liquid outlet end on the side surface of the swing arm is 10+/-2 degrees.
3. The tai-drum wafer processing method according to claim 2, characterized in that: the water-gas converging block connected with the flushing head is arranged on the side face of the swing arm through a wedge block, and an included angle of 10+/-2 degrees is kept between the installation face of the flushing head and the connection face of the wedge block for connecting with the swing arm.
4. The tai-drum wafer processing method according to claim 1, characterized in that:
in the step S2, the first speed is 1450-1550 rpm, the second speed is 0.8 rpm, and the first duration is 10 seconds;
in the step S3, the third speed is between 1000 and 1200 revolutions per minute, the fourth speed is 1 revolution per minute, and the second duration is 20 seconds.
5. The tai-drum wafer processing method according to claim 1, characterized in that:
in the step S4, the fifth speed is 1450-1550 rpm, the sixth speed is 1 rpm, and the third duration is 10 seconds;
in the step S5, the seventh speed is 2 rpm, and the fourth period of time is 20 seconds.
6. The tai-drum wafer processing method according to claim 1, characterized in that: when the Taihe wafer ring is cut, water is sprayed to a cutting channel formed by cutting the cutter in real time from the side part of the cutter through a first spray hole on the water spraying block.
7. The tai-drum wafer processing method according to claim 6, characterized in that: the first spray holes are symmetrically distributed on two sides of the cutter, and the intersection point of water columns sprayed by the first spray holes is opposite to a cutting channel formed by the cutter in real time and is positioned at the upper port of the cutting channel.
8. A method of processing a tai-drum wafer according to any one of claims 1 to 7, wherein: in the circular cutting process, the second spray holes arranged on the water curtain are used for flushing the two side areas close to the two ends of the water curtain in the position where the cutting channel is formed by cutting the tai drum wafer on the cutting table.
9. The method for processing the wafer is characterized by comprising the following steps of:
s10, placing the wafer subjected to circular cutting on a vacuum adsorption table;
s20, in the process that a flushing head moves from one side of a cutting channel of a too-drum wafer to the other side of the cutting channel, the flushing head flushes the too-drum wafer, when flushing, the too-drum wafer rotates at a first speed, a swing arm where the flushing head is located swings at a second speed, and the flushing head sprays two water-gas fluids to the too-drum wafer;
s30, enabling the flushing head to flush the whole top surface of the too-drum wafer for a second time period, wherein when in flushing, the too-drum wafer rotates at a third speed smaller than the first speed, the swing arm swings back and forth at a fourth speed larger than the second speed, and the flushing head sprays two water-gas fluids to the too-drum wafer;
s40, in the process that the blowing head moves from one side of the cutting channel to the other side of the cutting channel, the blowing head blows the too-drum wafer, when blowing, the too-drum wafer rotates at a fifth speed, and the swing arm swings at a sixth speed;
s50, blowing the whole top surface of the too-drum wafer for a fourth time period by the blowing head, wherein the too-drum wafer rotates at a fifth speed during blowing, and the swing arm swings at a seventh speed which is greater than the sixth speed;
s60, spin-drying the tai drum wafer;
and S70, taking the dried tai drum wafer out of the vacuum adsorption table.
10. The tai-drum wafer processing method according to claim 9, characterized in that: the liquid outlet end of the flushing head is arranged obliquely downwards, the included angle between the axis of the liquid outlet end and the projection line of the axis of the liquid outlet end on a projection surface is 10 degrees+/-2 degrees, the projection surface is a plane overlapped with the side surface of the swing arm, and the intersection point of the axis of the liquid outlet end and the projection surface is positioned above the flushing head;
the flushing head is arranged at the front side of the swing arm, and when the swing arm is at the initial position, the flushing head is positioned at the outer side of the vacuum adsorption table, and the front side of the swing arm faces the vacuum adsorption table.
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