CN116836519A - Composition for wafer packaging, fan-out type packaging structure containing composition and preparation method of fan-out type packaging structure - Google Patents
Composition for wafer packaging, fan-out type packaging structure containing composition and preparation method of fan-out type packaging structure Download PDFInfo
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- CN116836519A CN116836519A CN202310804855.9A CN202310804855A CN116836519A CN 116836519 A CN116836519 A CN 116836519A CN 202310804855 A CN202310804855 A CN 202310804855A CN 116836519 A CN116836519 A CN 116836519A
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
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- AHIPJALLQVEEQF-UHFFFAOYSA-N 4-(oxiran-2-ylmethoxy)-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1COC(C=C1)=CC=C1N(CC1OC1)CC1CO1 AHIPJALLQVEEQF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The application discloses a composition for wafer encapsulation, a fan-out type encapsulation structure containing the composition and a preparation method thereof, wherein the composition comprises the following components in parts by mass: 75 to 83 parts of first spherical silicon dioxide, 5.5 to 11 parts of first resin, 8.5 to 13 parts of first curing agent, 0.1 to 2 parts of first diluent and 0.05 to 1.15 parts of first accelerator, wherein the D50 of the first spherical silicon dioxide is 3 to 6 mu m, the transmissivity of the first resin to visible light is not lower than 35%, the first resin is selected from epoxy resin, has the characteristics of good transmissivity, low thermal expansion coefficient and low water absorption, can be applied to filling a gap between two adjacent convex electric columns in a wafer level packaging process, can improve the accuracy of bonding a cut wafer to a substrate carrier plate, effectively reduces the defective rate of a product, and improves the stability and reliability of the conductive column.
Description
Technical Field
The application relates to the technical field of semiconductor packaging, in particular to a composition for wafer packaging, a fan-out type packaging structure containing the composition and a preparation method of the fan-out type packaging structure.
Background
With the rapid development of the semiconductor industry, chips are continuously developed towards the directions of light weight, high performance, low power consumption and multifunctionality, so that the requirements on wafer level packaging technology are continuously improved. In recent years, the feature size of a chip is approaching to the physical limit, and advanced packaging technology becomes an important way for continuing moore's law, a series of novel packaging technologies emerge, wherein fan-out wafer level packaging is one of the most popular novel packaging forms due to the advantages of low cost, high integration level and the like, and the fan-out wafer level packaging technology is widely applied in the fields of wireless communication, automotive electronics, medical electronics, artificial intelligence, military electronics and the like and provides firm and powerful support for next-generation compact and high-performance electronic equipment.
The fan-out wafer level packaging technique is to fan out the circuit through the conductive pillars of the die unit to the metal pads of the printed wiring board (Printed Circuit Board, PCB) using a Re-routing layer (Re-distributed layer, RDL) with a partial area of the Re-routing layer beyond (fanning out of) the die edge. The fan-out wafer level packaging technology adopts a wiring design of I/O contacts in an area beyond the chip size, the number of the I/O contacts is increased, the wiring area which can be used by the chip is increased by adopting an RDL technology, the effective area of the chip is fully utilized, the purpose of reducing the cost is achieved, and after the fan-out packaging technology finishes the chip tin ball connection, the fan-out wafer level packaging technology can be directly welded to a PCB without using a packaging carrier plate, so that the signal transmission distance is shortened, and the electrical performance is improved.
Currently, in fan-out type wafer level packaging, polyimide (PI) is generally used to fill a gap between two adjacent conductive pillars to realize primary packaging, but PI has a characteristic of a larger thermal expansion coefficient and a higher water absorption rate, which causes a problem that the conductive pillars are excessively corroded, so that stability of the conductive pillars is easily damaged, for example, the conductive pillars are denatured and collapse due to excessive corrosion. Therefore, there is a need to develop a composition with a low coefficient of thermal expansion and low water absorption that can be used to encapsulate the gap between two adjacent conductive pillars.
Disclosure of Invention
The application provides a composition for wafer encapsulation, a fan-out type encapsulation structure containing the composition and a preparation method thereof, which are used for encapsulating a gap between two adjacent conductive posts.
In a first aspect, the present application provides a composition for wafer encapsulation, comprising, in parts by mass: 75 to 83 parts of first spherical silica, 5.5 to 11 parts of first resin, 8.5 to 13 parts of first curing agent, 0.1 to 2 parts of first diluent, and 0.05 to 1.15 parts of first accelerator;
Wherein the D50 of the first spherical silica is 3-6 mu m, the transmittance of the first resin to visible light is not lower than 35%, and the first resin is selected from epoxy resin.
Optionally, the viscosity of the first resin is 0.9 Pa.s-20 Pa.s; and/or
The viscosity of the composition is 100 Pa.s-200 Pa.s.
Optionally, the first resin is selected from one or more of bisphenol a type diglycidyl ether, P- (2, 3-epoxypropoxy) -N, N-bis (2, 3-epoxypropyl) aniline, and bisphenol F type epoxy resin ZLF-160U; and/or
The first curing agent is selected from anhydride curing agents; and/or
The first diluent is selected from one or more of gamma-glycidyl ether oxypropyl trimethoxy silane and C12-14 alkyl glycidyl ether; and/or
The first accelerator is selected from the group consisting of latent accelerators.
Optionally, the first curing agent is selected from one or more of methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride and methylnadic anhydride; and/or
The latency accelerator is selected from 2,4, 6-tris (dimethylaminomethyl) phenol.
In a second aspect, the present application provides a fan-out package structure, including:
a base carrier plate;
The chip units are arranged at intervals and are arranged on one side of the base carrier plate;
the first packaging part is arranged on one side of the base carrier plate and is used for packaging the chip unit; and
a rewiring layer electrically connected with the chip unit;
wherein each of the chip units includes:
bare crystal;
a plurality of conductive columns arranged at intervals and arranged on one side of the bare die; and
and a second encapsulation part which is positioned at one side of the bare die provided with the conductive column, and the conductive column is embedded in the second encapsulation part, and the material of the second encapsulation part comprises the composition according to any one of the first aspect.
Optionally, a gap between any two adjacent conductive posts is 8-10 μm; and/or
The height of the conductive column is 10-30 μm.
Optionally, the material of the first packaging part is a resin composition according to parts by weight, and the resin composition comprises: 86 to 89 parts of a second spherical silica, 6 to 7.6 parts of a second resin, 4.2 to 6.3 parts of a second curing agent, 0.3 to 0.8 parts of a second diluent, 0.4 to 1 part of a second accelerator, and 0.1 to 0.5 parts of carbon black;
Wherein the second resin is selected from epoxy resins, and the average particle size of the second spherical silica is larger than that of the first spherical silica.
Optionally, the second spherical silica has a D99 of 73 μm to 76 μm; and/or
The second resin is selected from one or more of 1, 4-cyclohexanedimethanol diglycidyl ether and alicyclic Epoxy resin Syna-Epoxy 28; and/or
The second curing agent is selected from one or more of anhydride curing agents and amine curing agents; optionally, the second curing agent is selected from one or more of dimethyl thiotoluene diamine and methyl nadic anhydride; and/or
The second diluent is selected from the group consisting of terminal epoxy allyl polyethers; and/or
The second accelerator comprises an adhesion accelerator XY-23-4 and a latent accelerator SC10208E, wherein the mass ratio of the latent accelerator SC10208E to the adhesion accelerator XY-23-4 is 1: (0.6-3.5).
In a third aspect, the present application further provides a method for preparing a fan-out package structure according to any one of the second aspect, where the method includes the following steps:
(1) Providing a prefabricated device, wherein the prefabricated device comprises a wafer and a plurality of conductive columns, and the conductive columns are arranged on one side of the wafer at intervals;
(2) Applying the composition according to any one of the first aspect to one side of the wafer close to the conductive columns, filling the composition according to any one of the first aspect between any two adjacent conductive columns, and curing to obtain a second packaging part;
(3) Cutting the prefabricated device with the second packaging part formed on the surface to obtain a plurality of chip units;
(4) Providing a base carrier plate, bonding each chip unit to a predefined area of the base carrier plate, wherein any two adjacent chip units have a gap;
(5) Encapsulating the chip units with a resin composition, wherein a gap between any two adjacent chip units is filled with the resin composition, so as to obtain a first encapsulation part;
(6) Forming a plurality of openings in the first packaging part, wherein one surface of each conductive column, which is far away from the base carrier plate, is correspondingly exposed to one opening; and
(7) And wiring at the position of each opening to obtain a rewiring layer, wherein the rewiring layer is electrically connected with one surface, far away from the base carrier plate, of the conductive column.
Optionally, the prefabricated device further comprises a connection layer, wherein the connection layer is arranged between the wafer and the conductive column; the connecting layer comprises a plurality of metal subunits which are arranged at intervals, the wafer is electrically connected with the metal subunits, the conductive columns are electrically connected with the metal subunits, and passivation materials are filled between any two adjacent metal subunits.
The application provides a composition for wafer encapsulation, a fan-out type encapsulation structure containing the composition and a preparation method thereof, and the composition has the following beneficial effects:
the composition of the application has the characteristics of good light transmittance, low thermal expansion coefficient and low water absorption, can be applied to a wafer level packaging process, such as a fan-out type wafer level packaging process, and can be used for filling a gap between two adjacent convex electric columns. In the first aspect, in the fan-out type wafer level packaging, positioning can be facilitated in the wafer level packaging process, so that the accuracy of bonding the cut wafer to the base carrier plate is improved, and the reject ratio of products is effectively reduced; in a second aspect, the composition has a lower coefficient of thermal expansion, which can reduce warpage to protect components, thereby improving the stability of the conductive posts; in the third aspect, the problem that the conductive column is corroded can be solved based on the low water absorption rate of the composition, and the stability of the conductive column is further improved.
In the preparation method of the fan-out type packaging structure, on one hand, the composition is adopted to fill the gap between two adjacent conductive columns so as to improve the stability and reliability of the conductive columns, and the accuracy of bonding the cut wafer to the substrate carrier plate is improved, so that the reject ratio of products is reduced; on the other hand, the chip unit is packaged on the substrate carrier plate by adopting another resin composition, so that the warping is effectively reduced, and the stability and the packaging effect of the fan-out type packaging structure are improved.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a fan-out package structure according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a prefabricated device in step S10 in a method for manufacturing a fan-out package structure according to an embodiment of the present application;
fig. 3 is a schematic diagram of a structure obtained by completing step S20 in a method for manufacturing a fan-out package structure according to an embodiment of the present application;
fig. 4 is a schematic diagram of a structure obtained by completing step S30 in a method for manufacturing a fan-out package structure according to an embodiment of the present application;
fig. 5 is a schematic diagram of a structure obtained by completing step S40 in a method for manufacturing a fan-out package structure according to an embodiment of the present application;
fig. 6 is a schematic diagram of a structure obtained by completing step S50 in a method for manufacturing a fan-out package structure according to an embodiment of the present application;
fig. 7 is a schematic diagram of a structure obtained by completing step S60 in a method for manufacturing a fan-out package structure according to an embodiment of the present application;
fig. 8 is a schematic structural diagram of a chip unit obtained by completing step S70 in the preparation method of a fan-out package structure according to an embodiment of the present application.
The reference numerals are as follows:
1: fan-out package structure, 10: prefabricated device, 11: base carrier plate, 12: chip unit, 13: first encapsulation portion, 14: rewiring layer, 120: wafer, 121: bare die, 122: conductive post, 123: second encapsulation portion, 124: connection layer, 1241: metal subunits, 101: passivation material, 102: composition, 103: resin composition, 104: openings, 105: and (5) a line.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. In addition, any methods and materials similar or equivalent to those described herein can be used in the present application. The preferred methods and materials described herein are illustrative only and should not be construed as limiting the application.
The following description of the embodiments is not intended to limit the preferred embodiments. Various embodiments of the application may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the application; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the ranges, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
As used herein, the term "comprising" means "including but not limited to".
As used herein, "plurality" or the like means two (species) or more than two (species).
As used herein, the scope of selection of "and/or" includes any one of two or more of the items listed in relation to each other and also includes any and all combinations of the items listed in relation to each other, including any two of the items listed in relation to each other, any more of the items listed in relation to each other, or all combinations of the items listed in relation to each other. For example, "a and/or B" includes A, B and a+b three parallel schemes. For another example, the technical schemes of "a, and/or B, and/or C, and/or D" include any one of A, B, C, D (i.e., the technical scheme of "logical or" connection), and also include any and all combinations of A, B, C, D, i.e., any two or three of A, B, C, D, and also include four combinations of A, B, C, D (i.e., the technical scheme of "logical and" connection).
As used herein, "D50" refers to the particle size corresponding to the cumulative percentage particle size distribution of the first spherical silica reaching 50%, representing the average particle size of the first spherical silica.
As used herein, "D99" refers to the particle size corresponding to the cumulative percentage particle size distribution of the second spherical silica reaching 99%.
The applicant has found that in fan-out wafer level packages, in order to increase the stability of the conductive pillars, the composition used to encapsulate the gap between two adjacent conductive pillars should have good light transmission, low coefficient of thermal expansion and low water absorption properties. Specifically, the cut wafer needs to be bonded to the base carrier, and in order to improve the bonding accuracy, the composition for packaging the gap between two adjacent conductive columns should have good light transmittance so as to be convenient for positioning; in order to reduce warpage to protect the component, the composition used to encapsulate the gap between two adjacent conductive posts should have a low coefficient of thermal expansion; in order to improve the corrosion of the conductive pillars and to improve the stability of the conductive pillars, the composition for encapsulating the gap between two adjacent conductive pillars should have a low water absorption.
Based on the above, the embodiment of the application provides a composition for wafer encapsulation, which can be used for encapsulating a gap between two adjacent conductive posts, and comprises the following components in parts by mass: 75 to 83 parts of first spherical silica, 5.5 to 11 parts of first resin, 8.5 to 13 parts of first curing agent, 0.1 to 2 parts of first diluent, and 0.05 to 1.15 parts of first accelerator.
In the composition of the embodiment of the present application, the parts by mass of the first spherical silica may be, for example, 75 parts, 76 parts, 77 parts, 78 parts, 79 parts, 80 parts, 81 parts, 82 parts, 83 parts, and a value between any two of the foregoing values by mass. The D50 of the first spherical silica is 3 μm to 6. Mu.m, for example, 3 μm, 4 μm, 5 μm, 6 μm and values between any two of the foregoing values.
The first spherical silica is used as a filler of the composition, and can reduce the thermal expansion coefficient of the composition, thereby reducing the water absorption rate of the composition. When the average particle diameter of the first spherical silica is a specific value, the higher the content of the first spherical silica in the composition, the more advantageous the reduction of the thermal expansion coefficient of the composition; further, on the premise that the content of the first spherical silica in the composition is a specific value, the smaller the particle diameter of the first spherical silica, the greater the hiding degree of the composition, so that the light transmittance of the composition is poorer.
In the composition of the embodiment of the present application, the first resin may be, for example, 5.5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts, 11 parts, and a value between any two of the foregoing, as the main compound of the composition. The transmittance of the first resin to visible light is one of the key factors affecting the transmittance of the composition, and in the embodiment of the present application, the transmittance of the first resin to visible light is not less than 35%, for example not less than 40%, not less than 50%, not less than 60%, not less than 70%, not less than 80%, not less than 90% or not less than 95%, and the first resin is selected from epoxy resins.
To further improve the reliability of the composition, in some embodiments of the present application, the viscosity of the composition is 100pa.s to 200pa.s, for example, 100pa.s, 120pa.s, 150pa.s, 180pa.s, 200pa.s, and any value between any two of the foregoing values, so as to improve the fluidity of the composition, thereby reducing the printing thrust required for covering the wafer in the wafer package, and improving the problem of the denaturation and collapse of the conductive pillars caused by the excessive printing thrust.
It should be noted that the viscosity of the composition is not easily too low to avoid jetting at high temperature (e.g., 110 ℃) printing. The content of the first spherical silica in the composition, the content of the first diluent and the viscosity of the first resin are key factors affecting the viscosity of the composition. When the kinds and contents of the other components in the composition other than the first diluent are unchanged, the higher the content of the first diluent, the more advantageous the viscosity of the composition is reduced. When the kinds and contents of the other components in the composition other than the first resin are unchanged and the content of the first resin is unchanged, the lower the viscosity of the first resin is, the more advantageous the lowering of the viscosity of the composition is. When the types and contents of the other components in the composition except the first spherical silica are unchanged and the content of the first spherical silica is unchanged, the smaller the particle size of the first spherical silica, the higher the packing density of the first spherical silica, which is more favorable for improving the viscosity of the composition.
To reduce the viscosity of the composition, in some embodiments of the application, the viscosity of the first resin is between 0.9pa.s and 20pa.s, for example, between 0.9pa.s, 1pa.s, 3pa.s, 5pa.s, 8pa.s, 10pa.s, 13pa.s, 15pa.s, 18pa.s, 20pa.s, and values between any two of the foregoing.
As an example, the first resin is selected from one or more of bisphenol a type diglycidyl ether, P- (2, 3-glycidoxy) -N, N-bis (2, 3-epoxypropyl) aniline, and bisphenol F type epoxy resin ZLF-160U. Wherein the bisphenol A type diglycidyl ether can be Dow DER332 or phoenix epoxy resin E-51 (Henan sunny chemical Co., ltd.); bisphenol F type epoxy resin ZLF-160U is available from Nanlon ultra pure epoxy resin (SiAn) Co.
In the composition of the embodiment of the present application, the first curing agent is capable of reacting with the first resin to cure the first resin. The first curing agent may be, for example, 8.5 parts, 9 parts, 10 parts, 11 parts, 12 parts, 13 parts, and a value between any two of the foregoing. In some embodiments of the present application, the first curative is selected from anhydride curatives including, but not limited to, one or more of methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, and methylnadic anhydride.
In the composition of the embodiment of the application, the first diluent is used for regulating the viscosity of the composition so as to facilitate further processing, and can promote the compatibility between the first spherical silica and the first resin. The parts by mass of the first diluent may be, for example, 0.1 part, 0.5 part, 1 part, 1.3 parts, 1.5 parts, 1.8 parts, 2 parts, and values between any two of the foregoing. As an example, the first diluent is selected from one or more of gamma-glycidoxypropyl trimethoxysilane (CAS No. 2530-83-8) and a carbon 12-14 alkyl glycidyl ether (CAS No. 68609-97-2), wherein gamma-glycidoxypropyl trimethoxysilane is, for example, KH-560, us doucorning Z6040 or japanese letter KBM403.
In the composition of the embodiment of the application, the first accelerator is used for accelerating the reaction between the first curing agent and the first resin, so as to improve the reaction rate. The first accelerator may be, for example, 0.05 parts, 0.1 parts, 0.5 parts, 0.8 parts, 1 part, 1.15 parts, and values between any two of the foregoing. In order to provide good storage of the composition at ambient temperature, in some embodiments of the application, the first accelerator is selected from the group consisting of latent accelerators, exemplified by 2,4, 6-tris (dimethylaminomethyl) phenol, available from Hui Cheng electronic materials Inc., corresponding model number K-54, chuzhou, anhui.
In some embodiments of the present application, the composition for wafer encapsulation consists of 75 to 83 parts by mass of the first spherical silica, 5.5 to 11 parts by mass of the first resin, 8.5 to 13 parts by mass of the first curing agent, 0.1 to 2 parts by mass of the first diluent, and 0.05 to 1.15 parts by mass of the first accelerator.
The composition provided by the embodiment of the application has the characteristics of good light transmittance, low thermal expansion coefficient and low water absorption, can be applied to a wafer level packaging process, such as a fan-out type wafer level packaging process, and can be used for filling a gap between two adjacent convex electric columns. In the fan-out-based wafer level packaging, positioning can be facilitated in the wafer level packaging process, so that the accuracy of bonding the cut wafer to the substrate carrier plate is improved, and the reject ratio of a product is effectively reduced; the composition has a low thermal expansion coefficient, so that warping can be reduced to protect elements, and the stability of the conductive column is improved; the composition-based conductive column has low water absorption rate, can improve the problem that the conductive column is corroded, and further improves the stability of the conductive column.
The embodiment of the application also provides a preparation method of the composition, which can be used for preparing any one of the compositions, and comprises the following steps:
S1, placing 75 to 83 parts of first spherical silicon dioxide, 5.5 to 11 parts of first resin, 8.5 to 13 parts of first curing agent and 0.1 to 2 parts of first diluent in a centrifugal mixer, and stirring until the system is primarily and uniformly mixed to obtain a first mixed system;
s2, adding the first mixed system prepared in the step S1 into three rollers for dispersion treatment, adding 0.05 to 1.15 parts of a first accelerator, and mixing to obtain a second mixed system;
and S3, carrying out vacuum defoaming treatment on the second mixed system prepared in the step S2 by adopting a centrifugal mixer to obtain the composition.
Specifically, in step S1, the rotation of the centrifugal mixer is 1000r/min, the revolution is 1400r/min, and the mixing time is 120S to 240S, for example.
In the step S2, the feeding gap of the three rollers is 40-70 mu m, and the discharging gap is 20-40 mu m.
In the step S3, the time of the vacuum defoaming treatment is 60-120S, the vacuum degree is, for example, 0.05-0.08 MPa, the rotation of the centrifugal stirrer is 200r/min, and the revolution is 1400r/min.
The embodiment of the present application further provides a fan-out type package structure, as shown in fig. 1, where the fan-out type package structure 1 includes a substrate carrier 11, a plurality of chip units 12 disposed at intervals, a first package portion 13, and a redistribution layer 14, where the plurality of chip units 12 disposed at intervals are disposed on one side of the substrate carrier 11, and the redistribution layer 14 is electrically connected to the chip units 12.
With continued reference to fig. 1, each chip unit 12 includes a die 121, a plurality of conductive pillars 122 disposed at intervals, and a second package portion 123, where the plurality of conductive pillars 122 disposed at intervals are disposed on one side of the die 121, the second package portion 123 is disposed on one side of the die 121 where the conductive pillars 122 are disposed, and the conductive pillars 122 are embedded in the second package portion 123, and a material of the second package portion 123 includes any of the foregoing compositions. It should be noted that, the composition with good light transmittance, low thermal expansion coefficient, low water absorption and low viscosity is used as the material of the second package portion 123, which can reduce warpage and improve stability of the conductive pillars 122, and is beneficial to observing positioning of the chip unit 12.
Specifically, die 121 is a die (die) formed by dicing a wafer, and die 121 is a small piece of the wafer. Die 121 is a small irregularly shaped crystal that makes up the polycrystalline body, and each die 121 sometimes has a somewhat different sub-grain composition in terms of bit direction. The average diameter of the die 121 is, for example, 0.015mm to 0.25mm.
The conductive pillars 122 are electrically connected to the redistribution layer, and the conductive pillars 122 are electrically connected to the die 121. The material of the conductive pillars 122 is metal, illustratively copper.
In order to achieve both space saving and good fan-out packaging, in some embodiments of the present application, the gap between any two adjacent conductive posts 122 is 8 μm to 10 μm, for example, 8 μm, 9 μm, 10 μm, and values between any two values described above; and/or the height of the conductive pillars is 10 μm to 30 μm, for example, 10 μm, 20 μm, 30 μm, and values between any two of the foregoing.
In some embodiments of the present application, with continued reference to fig. 1, the chip unit 12 further includes a connection layer 124, the connection layer 124 is disposed between the die 121 and the conductive pillars 122, the die 121 is electrically connected with the connection layer 124, and the conductive pillars 122 are electrically connected with the connection layer 124, wherein the connection layer 124 includes a plurality of metal sub-units 1241 disposed at intervals, and passivation materials 101 are filled between any two adjacent metal sub-units 1241 to reduce stress, so as to effectively improve stress of the package structure, thereby further reducing warpage, and further improving reliability of the package. Passivation material 101 includes, but is not limited to, one or more of silicon oxide, silicon nitride, and silicon oxynitride, as an example, passivation material 101 is Si 3 N 4 。
The first packaging portion 13 is used for packaging the chip unit 12 on the base carrier 11, and compared with the material of the second packaging portion 123, the material of the first packaging portion 13 has lower requirements for visible light transmittance and viscosity, but has higher requirements for warpage. In order to reduce both the manufacturing cost and the thermal expansion coefficient of the material of the first encapsulation portion 13, in some embodiments of the present application, the material of the first encapsulation portion 13 is a resin composition including 86 to 89 parts by mass of a second spherical silica, 6 to 7.6 parts by mass of a second resin, 4.2 to 6.3 parts by mass of a second curing agent, 0.3 to 0.8 part by mass of a second diluent, 0.4 to 1 part by mass of a second accelerator, and 0.1 to 0.5 part by mass of carbon black, wherein the second resin is selected from an epoxy resin, and the average particle size of the second spherical silica is larger than that of the first spherical silica.
Specifically, the second spherical silica serves as a filler of the resin compound. In the resin composition, the mass fraction of the second spherical silica may be, for example, 86 parts, 87 parts, 88 parts, 89 parts, and a value between any two of the foregoing values. In some embodiments of the application, the second spherical silica has a D99 of 73 μm to 76 μm, for example 73 μm, 74 μm, 75 μm, 76 μm and values between any two of the foregoing.
In the resin composition, the second resin is selected from one or more of 1, 4-cyclohexanedimethanol diglycidyl ether (CAS number 14228-73-0) available from Shanghai soft-surface New Material Co., ltd., and alicyclic Epoxy resin Syna-Epoxy28 available from Nannon New Nath Material Co., ltd., model No. Syna-Epoxy28, and alicyclic Epoxy resin Syna-Epoxy 28.
In the resin composition, the second curing agent is capable of reacting with the second resin to cure the second resin. The parts by mass of the second curing agent may be, for example, 4.2 parts, 4.5 parts, 5 parts, 5.5 parts, 6 parts, 6.3 parts, and values between any two of the foregoing. In some embodiments of the application, the second curative is selected from one or more of an anhydride curative and an amine curative, for example, from one or more of dimethyl thiotoluene diamine and methyl nadic anhydride.
In the resin composition, the second diluent is used to regulate the viscosity of the resin composition for further processing and to promote compatibility between the second spherical silica and the second resin. The mass fraction of the second diluent may be, for example, 0.3 parts, 0.4 parts, 0.5 parts, 0.6 parts, 0.7 parts, 0.8 parts, and values between any two of the foregoing. By way of example, the second diluent is selected from the group consisting of epoxy-terminated allyl polyethers (Colon KL-11B).
In the resin composition, the second accelerator is used for accelerating the reaction between the second curing agent and the second resin, and improving the reaction rate. The mass fraction of the second accelerator may be, for example, 0.4 part, 0.5 part, 0.6 part, 0.7 part, 0.8 part, 0.9 part, 1 part, and a value between any two of the foregoing.
In order for the resin composition to have good room temperature storage properties, in some embodiments of the present application, the second accelerator comprises a latent accelerator, for example selected from microcapsule modified imidazole epoxy compositions (gram SC 10208E). In the resin composition, the mass fraction of SC10208E as a latent accelerator is, for example, 0.2 to 0.3 parts.
In order to impart good adhesion to the resin composition, in some embodiments of the present application, the second accelerator comprises an adhesion promoter, such as a product selected from the group consisting of model XY-23-4, available from silicon new materials technologies, inc. In the resin composition, the adhesion promoter XY-23-4 is, for example, 0.2 to 0.7 parts by mass.
When the resin composition includes the adhesion promoter XY-23-4 and the latent promoter SC10208E, the mass ratio of the latent promoter SC10208E to the adhesion promoter XY-23-4 is 1: (0.6 to 3.5), for example, 1:0.6, 1:1. 1:1.5, 1:2. 1:2.5, 1:3. 1:3.5 and between any two of the foregoing ratio values.
In the resin composition, carbon black is used as a colorant. The carbon black may be, for example, 0.1 part, 0.2 part, 0.3 part, 0.4 part, 0.5 part, and values between any two of the foregoing.
In some embodiments of the present application, the resin composition is composed of 75 to 83 parts by mass of the first spherical silica, 5.5 to 11 parts by mass of the first resin, 8.5 to 13 parts by mass of the first curing agent, 0.1 to 2 parts by mass of the first diluent, 0.1 to 0.5 part by mass of the carbon black, and 0.05 to 1.15 parts by mass of the first accelerator. The preparation method of the resin composition is carried out with reference to the preparation method of the composition described above.
The embodiment of the application also provides a preparation method of the fan-out type packaging structure, which can be used for preparing any of the fan-out type packaging structures, as shown in fig. 2 to 8, and comprises the following steps:
S10, providing a prefabricated device, wherein the prefabricated device comprises a wafer and a plurality of conductive columns, and the conductive columns are arranged on one side of the wafer at intervals;
s20, applying any one of the compositions on one side of the wafer close to the conductive posts, filling the composition between any two adjacent conductive posts, and curing to obtain a second packaging part;
s30, cutting the prefabricated device with the second packaging part formed on the surface to obtain a plurality of chip units;
s40, providing a base carrier plate, bonding each chip unit to a predefined area of the base carrier plate, wherein any two adjacent chip units have a gap;
s50, encapsulating the chip units by adopting the resin composition, wherein the gap between any two adjacent chip units is filled with the resin composition, so as to obtain a first encapsulation part;
s60, forming a plurality of openings in the first packaging part, wherein one surface of each conductive column far away from the base carrier plate is correspondingly exposed to one opening;
and S70, wiring at the position of each opening to obtain a rewiring layer, wherein the rewiring layer is electrically connected with one surface of the conductive column, which is far away from the base carrier plate.
In step S10, the structural composition of the prefabricated device is shown in fig. 2. In some embodiments of the present application, with continued reference to fig. 2, the prefabricated device 10 further includes a connection layer 124, the connection layer 124 is disposed between the wafer 120 and the conductive pillars 122, the wafer 120 is electrically connected to the connection layer 124, and the conductive pillars 122 are electrically connected to the connection layer 124, wherein the connection layer 124 includes a plurality of metal subunits 1241 disposed at intervals, and passivation material 101 is filled between any two adjacent metal subunits 1241 to reduce stress.
In step S20, the composition 102 may be first dotted to the center of the wafer 120, and then the composition 102 is filled into the gap between any two adjacent conductive pillars 122 by a hot pressing process (temperature is 115 ℃ for example), and is press-molded to obtain the structure shown in fig. 3.
In step S30, the prefabricated device having the second package portion formed on the surface thereof may be cut using a cutting wheel, or may be cut using a conventional technique in the art to obtain the structure shown in fig. 4. It should be noted that, in step S30, the low warpage of the composition can improve the uniformity of dicing, and if the warpage of the composition is too high, the diced chip units are deformed and damaged, and cannot be accurately positioned in the subsequent process.
In step S40, the structure obtained after the chip units 12 are bonded to the base carrier plate 11 is as shown in fig. 5, and the key influencing factors of the precise bonding of each chip unit 12 to the predefined area of the base carrier plate 11 are as follows: the composition has good light transmittance.
In step S50, the resin composition may be used to encapsulate the chip unit 12 using a printing process. The structure obtained after completion of step S50 is as shown in fig. 6, and the resin composition 103 can sufficiently fill the gap between the adjacent two chip units 12 and the gap between the chip units 12 and the base carrier 11.
In step S60, a plurality of openings may be formed in the first package portion by conventional means such as etching, polishing, or the like, that is, polishing or etching the cured adhesive layer until the surface of the conductive post, which is far away from the substrate carrier, is exposed. The structure obtained after the completion of step S60 is shown in fig. 7, and one surface of each conductive pillar 122 away from the substrate carrier 11 is respectively exposed to an opening 104.
In step S70, as shown in fig. 8, for each chip unit 12, a circuit 105 may be disposed on a surface of each conductive pillar 122 exposed to the opening 104. It should be noted that fig. 8 only illustrates that the circuit 105 is disposed on the side of the single conductive pillar 122 exposed to the opening 104, and in fact, the circuit 105 is disposed on the side of each conductive pillar 122 exposed to the opening 104.
The properties of the resin composition and the functional film produced from the resin composition according to the present application will be described in detail with reference to specific examples, comparative examples and experimental examples.
Composition example 1
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The proportions of the compositions in this example are shown in Table 1 below:
TABLE 1 formulation of compositions in this example
The preparation method of the composition in the embodiment comprises the following steps:
s1.1, weighing first spherical silicon dioxide, first resin, a first curing agent and a first diluent according to a formula, placing the weighed components into a centrifugal stirrer, and stirring for 240 seconds under the conditions that the rotation is 1000r/min and the revolution is 1400r/min to obtain a first mixed system;
s1.2, adding the first mixed system prepared in the step S1.1 into three rollers for dispersion treatment, and then adding a first accelerator according to a formula, wherein a feeding gap is 60 mu m, and a discharging gap is 30 mu m, so as to obtain a second mixed system;
s1.3, carrying out vacuum defoaming treatment on the second mixed system prepared in the step S1.2 by adopting a centrifugal mixer, wherein the technological parameters of the vacuum defoaming treatment are as follows: the rotation is 200r/min, revolution is 1400r/min, and the treatment time is 100s, so that the composition is obtained.
Composition example 2
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the first resin was replaced with "bisphenol a type bisglycidyl ether (ceramic DER 332)".
The preparation method of the composition in this example was carried out with reference to composition example 1.
Composition example 3
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the first resin was replaced with "bisphenol F type epoxy resin ZLF-160U (available from milan ultrapure epoxy resins, inc.).
The preparation method of the composition in this example was carried out with reference to composition example 1.
Composition example 4
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the first spherical silica was replaced with "spherical silica having a D50 of 6. Mu.m".
The preparation method of the composition in this example was carried out with reference to composition example 1.
Composition example 5
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the compounding ratio of each component is different, and the formula of the composition in the embodiment is as follows: 83 parts of a first spherical silica (D50: 3 μm), 5.7 parts of a first resin (same composition as in example 1), 9.6 parts of a first curing agent (methylnadic anhydride), 1.6 parts of a first diluent (C12-14 alkyl glycidyl ether), and 0.1 part of a first accelerator (2, 4, 6-tris (dimethylaminomethyl) phenol), the specific kinds of the respective components being the same as those of composition example 1.
The preparation method of the composition in this example was carried out with reference to composition example 1.
Composition example 6
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the compounding ratio of each component is different, and the formula of the composition in the embodiment is as follows: 83 parts of first spherical silica (D50: 3 μm), 6.1 parts of first resin (same composition as in example 1), 10.2 parts of first curing agent (methylnadic anhydride), 0.6 part of first diluent (C12-14 alkyl glycidyl ether), and 0.1 part of first accelerator (2, 4, 6-tris (dimethylaminomethyl) phenol), the specific kinds of the respective components being the same as those of composition example 1.
The preparation method of the composition in this example was carried out with reference to composition example 1.
Composition example 7
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the compounding ratio of each component is different, and the formula of the composition in the embodiment is as follows: 75 parts of a first spherical silica (D50 of 3 μm), 11 parts of a first resin (same composition example 1), 13 parts of a first curing agent (methyl nadic anhydride), 0.9 part of a first diluent (C12-14 alkyl glycidyl ether), and 0.1 part of a first accelerator (2, 4, 6-tris (dimethylaminomethyl) phenol), the specific kinds of the respective components being the same as those of composition example 1.
The preparation method of the composition in this example was carried out with reference to composition example 1.
Composition example 8
The embodiment provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out encapsulation structure. The composition in this example differs from the composition in composition example 1 only in that: the compounding ratio of each component is different, and the formula of the composition in the embodiment is as follows: 79 parts of first spherical silica (D50 of 3 μm), 9 parts of first resin (same composition example 1), 10.6 parts of first curing agent (methyl nadic anhydride), 1.3 parts of first diluent (C12-14 alkyl glycidyl ether), and 0.1 part of first accelerator (2, 4, 6-tris (dimethylaminomethyl) phenol), the specific kinds of the respective components being the same as those of composition example 1.
The preparation method of the composition in this example was carried out with reference to composition example 1.
Comparative composition example 1
The comparative example provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out type encapsulation structure. The composition in this comparative example was different from the composition in composition example 1 only in that: the first spherical silica was replaced with "spherical silica having a D50 of 1. Mu.m".
The preparation method of the composition in this comparative example was carried out with reference to composition example 1.
Comparative composition example 2
The comparative example provides a composition for wafer encapsulation and a preparation method thereof, which can be used for filling a gap between any two adjacent conductive columns in a fan-out type encapsulation structure. The composition in this comparative example was different from the composition in composition example 1 only in that: the first resin was replaced with "E44 epoxy resin (product model E44 from Guangzhou Kogyo New Material science Co., ltd.).
The preparation method of the composition in this comparative example was carried out with reference to composition example 1.
Resin composition example 1
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The proportions of the resin compositions in this example are shown in Table 1 below:
TABLE 2 formulation of resin compositions in this example
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Resin composition example 2
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The resin composition in this example differs from the resin composition in example 1 only in that: the second spherical silica was replaced with "spherical silica having D99 of 73 μm".
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Resin composition example 3
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The resin composition in this example differs from the resin composition in example 1 only in that: the second spherical silica was replaced with "spherical silica having a D99 of 65 μm".
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Resin composition example 4
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The resin composition in this example differs from the resin composition in example 1 only in that: the second spherical silica was replaced with "spherical silica having D99 of 85 μm".
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Resin composition example 5
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The resin composition in this example differs from the resin composition in example 1 only in that: the second resin was replaced with "1, 4-cyclohexanedimethanol diglycidyl ether (available from Shanghai soft tissue New Material technology Co., ltd., product model REP-111)".
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Resin composition example 6
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The resin composition in this example differs from the resin composition in example 1 only in that: the compounding ratio of each component is different, and the formula of the composition in the embodiment is as follows: 86 parts of a second spherical silica (D99 of 76 μm), 7.1 parts of a second resin (alicyclic Epoxy resin Syna-Epoxy 28), 5.2 parts of a second curing agent (methyl nadic anhydride), 0.61 parts of a second diluent (Epoxy-terminated allyl polyether), 0.62 parts of an adhesion promoter XY-23-4,0.27 parts of a latent promoter SC10208E, and 0.2 parts of carbon black, the specific kinds of the respective components being the same as in resin composition example 1.
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Resin composition example 7
The present embodiment provides a resin composition that can be used to encapsulate a chip unit to a base carrier plate and fill a gap between any adjacent two chip units. The resin composition in this example differs from the resin composition in example 1 only in that: the latent accelerator is replaced by "dimethyl thiotoluene diamine".
The preparation method of the resin composition in this example was performed with reference to the preparation method of the composition in composition example 1.
Experimental example 1
The compositions of composition examples 1 to 8 and composition comparative examples 1 to 3 were subjected to performance tests, respectively, the items of which include: viscosity, thixotropic properties, warping properties, visible light transmittance, water absorption, and thermo-mechanical properties.
The viscosity test method comprises the following steps: and (3) adjusting the circulating condensed water of the viscometer to 25 ℃, placing the composition in a sleeve of the viscometer, installing the composition at a detection position of the viscometer, inserting a temperature thermocouple, adjusting the rotating speed of the viscometer to 20r/min, and reading the value of the viscosity (Pa.s) after 4 min.
The thixotropic testing method comprises the following steps: and (3) reading the ratio of the viscosity value at the rotating speed of the viscometer of 0.5r/min to the viscosity value at the rotating speed of the viscometer of 5r/min by using the same viscosity testing method, and recording the ratio as the TI value.
The testing method of the warping property comprises the following steps: the slide glass with the thickness of 1mm is placed on an electric heating plate with the temperature of 90 ℃, then the composition is coated on one side of the slide glass far away from the electric heating plate to form a film layer with the thickness of 1mm, then the slide glass containing the film layer is placed in an oven with the temperature of 130 ℃ for baking for 1h, then the temperature is reduced to room temperature, and the warping value of the slide glass is read by adopting a ruler with the thickness of 0.5 mm.
The method for testing the visible light transmittance comprises the following steps: the composition was knife coated on one side of a release film using a doctor blade to form a film layer having a thickness of 60 μm, and then baked in an oven at 115 ℃ for 10 minutes, and then the release film was removed, and the obtained cured film was placed in a light transmittance meter for visible light transmittance test.
The water absorption test method comprises the following steps: curing the composition to obtain a cured sample; then, weighing the mass M 1 The cured sample (fixed value) was placed on a clear polytetrafluoroethylene film; then, the solidified sample and the polytetrafluoroethylene film are placed in a high-temperature cooking device for treatment, and the technological parameters are as follows: 130 ℃,85% humidity, and 96 hours of treatment; finally, taking out the solidified sample, wiping off the surface water, weighing the mass again, and marking as M 2 . The water absorption was calculated as (M) 2 -M 1 )/M1×100%。
The method for testing the thermomechanical property comprises the following steps: the composition was uniformly dropped on a polytetrafluoroethylene mold (length: 10 cm. Times. Width: 1 cm. Times. Height: 2 mm), then baked in an oven at 130℃for 1 hour, then a sample block having a length of 1 cm. Times. Width: 1cm was cut out, and polished with sand paper to make the thickness of the sample block uniform, and then the Coefficient of Thermal Expansion (CTE) at the low temperature section of the sample block was measured by a thermo-mechanical analyzer (TMA) L ppm/DEG C), coefficient of Thermal Expansion (CTE) at high temperature H Ppm/°c) and TMA glass transition temperature (Tg, °c). Wherein CTE is L The detection temperature section of (C) is 40-60 ℃, and CTE H The detection temperature section of (2) is 180-200 ℃. In the detection process, the temperature-increasing program of the thermo-mechanical analyzer is three-stage, specifically, the first stage: heating from room temperature to 220 ℃ according to a heating rate of 10 ℃/min; and a second section: cooling from 220 ℃ to 40 ℃ according to a cooling rate of 10 ℃/min; third section: heating from 40 ℃ to 220 ℃ according to a heating rate of 10 ℃/min; drawing a thermal expansion coefficient-temperature characteristic curve for each section respectively, and reading a third section of curveThe average value of the thermal expansion coefficients of the temperature sections at 40-60 ℃ is recorded as CTE L And reading the average value of the thermal expansion coefficient of the detection temperature section of 180-200 ℃ and recording as CTE H 。
The results of the performance testing of the respective compositions are detailed in Table 3 below:
table 3 results of performance tests of the compositions of composition examples 1 to 8, composition comparative example 1 to 3
As can be seen from table 3, the compositions of composition examples 1 to 8 are superior in combination properties compared to the compositions of composition comparative examples 1 to 2, and are specifically expressed as follows: the compositions of composition examples 1 to 8 have good light transmittance, low thermal expansion coefficient and low water absorption, and the compositions of composition examples 5 to 8 have better overall properties. The compositions of the composition examples 1 to 8 are applied to fill the gap between two adjacent bump electrodes, so that the bonding accuracy of the cut wafer to the substrate carrier plate can be improved, the warpage is reduced, and the stability and reliability of the conductive electrode are improved, thereby being beneficial to reducing the reject ratio of products.
Experimental example 2
The resin compositions in resin composition examples 1 to 7 were subjected to performance tests, respectively, the items of which include: viscosity, thixotropy, warpage, thermal mechanical properties and silicon wafer adhesion, wherein the test methods of viscosity, thixotropy, warpage and thermal mechanical properties were performed with reference to experimental example 1.
The method for testing the adhesive force of the silicon wafer comprises the following steps: taking a clean first silicon wafer, manufacturing a square frame with the size of 2mm multiplied by 2mm on the first silicon wafer by adopting a Teflon adhesive tape, uniformly coating the composition in the frame, covering a clean second silicon wafer on the composition in the frame to form a sandwich-like structure, clamping and fixing the first silicon wafer and the second silicon wafer by adopting a clamp to obtain a structural member, then placing the structural member in a baking oven at 150 ℃ for baking for 1h, then taking out the structural member and naturally cooling, and after the structural member is cooled to room temperature, placing the structural member in a tensile machine to test the tensile force required by separating the adhesive layer from the silicon wafer.
The results of the performance test of each resin composition are detailed in Table 4 below:
table 4 results of performance test of resin compositions in resin composition example 1 to resin composition example 7
As can be seen from tables 3 and 4, the resin compositions in the resin composition examples 1 to 8 have lower thermal expansion coefficients and thus lower warpage, compared with the compositions in the composition examples 1 to 8, because: in fan-out wafer packaging, the composition is used for filling a gap between two adjacent conductive columns, and has good light transmittance, lower viscosity, lower thermal expansion coefficient and lower water absorption rate based on the stability requirement of the conductive columns and the requirement of positioning accuracy in subsequent processes; the resin composition is used for packaging the chip unit on the base carrier plate, and has lower requirements on visible light transmittance and viscosity, but higher requirements on warping property.
In addition, as can be seen from table 3, the compositions of composition examples 5 to 8 are used to fill the gap between two adjacent conductive pillars, and as can be seen from table 4, the resin compositions of resin composition examples 1, 3, 4 and 8 are used to encapsulate the chip units, which is advantageous in improving the stability and encapsulation effect of the fan-out type package structure.
The composition for wafer packaging, the fan-out type packaging structure containing the composition and the preparation method thereof provided by the embodiment of the application are described in detail. The principles and embodiments of the present application have been described herein with reference to specific examples, the description of which is only for aiding in the understanding of the technical solution of the present application and its core ideas; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the scope of the corresponding technical solutions of the embodiments of the present application.
Claims (10)
1. A composition for wafer encapsulation, the composition comprising, in parts by mass: 75 to 83 parts of first spherical silica, 5.5 to 11 parts of first resin, 8.5 to 13 parts of first curing agent, 0.1 to 2 parts of first diluent, and 0.05 to 1.15 parts of first accelerator;
Wherein the D50 of the first spherical silica is 3-6 mu m, the transmittance of the first resin to visible light is not lower than 35%, and the first resin is selected from epoxy resin.
2. The composition of claim 1, wherein the first resin has a viscosity of 0.9pa.s to 20pa.s; and/or
The viscosity of the composition is 100 Pa.s-200 Pa.s.
3. The composition according to claim 1 or 2, characterized in that the first resin is selected from one or more of bisphenol a type diglycidyl ether, P- (2, 3-glycidoxy) -N, N-bis (2, 3-epoxypropyl) aniline and bisphenol F type epoxy resin ZLF-160U; and/or
The first curing agent is selected from anhydride curing agents; and/or
The first diluent is selected from one or more of gamma-glycidyl ether oxypropyl trimethoxy silane and C12-14 alkyl glycidyl ether; and/or
The first accelerator is selected from the group consisting of latent accelerators.
4. A composition according to claim 3, wherein the first curative is selected from one or more of methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, and methylnadic anhydride; and/or
The latency accelerator is selected from 2,4, 6-tris (dimethylaminomethyl) phenol.
5. A fan-out package structure, comprising:
a base carrier plate;
the chip units are arranged at intervals and are arranged on one side of the base carrier plate;
the first packaging part is arranged on one side of the base carrier plate and is used for packaging the chip unit; and
a rewiring layer electrically connected with the chip unit;
wherein each of the chip units includes:
bare crystal;
a plurality of conductive columns arranged at intervals and arranged on one side of the bare die; and
a second encapsulation part located at a side of the die where the conductive pillars are provided, and into which the conductive pillars are embedded, the material of the second encapsulation part comprising the composition as set forth in any one of claims 1 to 4.
6. The fan-out package structure of claim 5, wherein a gap between any adjacent two of the conductive posts is 8-10 μm; and/or
The height of the conductive column is 10-30 μm.
7. The fan-out type package structure of claim 5, wherein the material of the first package part is a resin composition according to parts by weight, the resin composition comprising: 86 to 89 parts of a second spherical silica, 6 to 7.6 parts of a second resin, 4.2 to 6.3 parts of a second curing agent, 0.3 to 0.8 parts of a second diluent, 0.4 to 1 part of a second accelerator, and 0.1 to 0.5 parts of carbon black;
Wherein the second resin is selected from epoxy resins, and the average particle size of the second spherical silica is larger than that of the first spherical silica.
8. The fan-out package structure of claim 7, wherein the second spherical silicon dioxide has a D99 of 73-76 μιη; and/or
The second resin is selected from one or more of 1, 4-cyclohexanedimethanol diglycidyl ether and alicyclic Epoxy resin Syna-Epoxy 28; and/or
The second curing agent is selected from one or more of anhydride curing agents and amine curing agents; optionally, the second curing agent is selected from one or more of dimethyl thiotoluene diamine and methyl nadic anhydride; and/or
The second diluent is selected from the group consisting of terminal epoxy allyl polyethers; and/or
The second accelerator comprises an adhesion accelerator XY-23-4 and a latent accelerator SC10208E, wherein the mass ratio of the latent accelerator SC10208E to the adhesion accelerator XY-23-4 is 1: (0.6-3.5).
9. A method of manufacturing a fan-out package structure according to any of claims 5 to 8, comprising the steps of:
(1) Providing a prefabricated device, wherein the prefabricated device comprises a wafer and a plurality of conductive columns, and the conductive columns are arranged on one side of the wafer at intervals;
(2) Applying the composition according to any one of claims 1 to 4 to a side of the wafer adjacent to the conductive pillars and filling the composition according to any one of claims 1 to 4 between any two adjacent conductive pillars, and curing to obtain a second encapsulation;
(3) Cutting the prefabricated device with the second packaging part formed on the surface to obtain a plurality of chip units;
(4) Providing a base carrier plate, bonding each chip unit to a predefined area of the base carrier plate, wherein any two adjacent chip units have a gap;
(5) Encapsulating the chip units with a resin composition, wherein a gap between any two adjacent chip units is filled with the resin composition, so as to obtain a first encapsulation part;
(6) Forming a plurality of openings in the first packaging part, wherein one surface of each conductive column, which is far away from the base carrier plate, is correspondingly exposed to one opening; and
(7) And wiring at the position of each opening to obtain a rewiring layer, wherein the rewiring layer is electrically connected with one surface, far away from the base carrier plate, of the conductive column.
10. The method of manufacturing of claim 9, wherein the prefabricated device further comprises a connection layer disposed between the wafer and the conductive pillars; the connecting layer comprises a plurality of metal subunits which are arranged at intervals, the wafer is electrically connected with the metal subunits, the conductive columns are electrically connected with the metal subunits, and passivation materials are filled between any two adjacent metal subunits.
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