CN116825863A - 一种双面组件氧化石墨烯太阳能电池板 - Google Patents
一种双面组件氧化石墨烯太阳能电池板 Download PDFInfo
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- 239000010703 silicon Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XIUFWXXRTPHHDQ-UHFFFAOYSA-N prop-1-ene;1,1,2,2-tetrafluoroethene Chemical group CC=C.FC(F)=C(F)F XIUFWXXRTPHHDQ-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- -1 poly (perfluoroethylene propylene) Polymers 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本发明公开了一种双面组件氧化石墨烯太阳能电池板,所述太阳能电池板为多层层叠结构,包括从下至上设置的铝板网、钢化玻璃基板、下层EPE胶膜、晶硅电池片、氧化石墨烯膜层、上层EVA胶膜和钢化玻璃面板;所述铝板网为菱形大孔径结构;所述下层EPE胶膜为EVA/POE/EVA的共挤结构,外接触面均为EVA胶膜,所述氧化石墨烯膜层中掺杂碳纳米管;所述上层EVA胶膜层间覆有一层超细云母粉填料,上表面成型有一层聚全氟乙丙烯薄膜。本发明的太阳能电池板采用新型材料,物理性质、化学性质优良,具有导电性均匀、光能转化率、利用率高等优点。
Description
技术领域
本发明属于太阳能电池板技术领域,涉及一种双面组件氧化石墨烯太阳能电池板。
背景技术
地球上的不可再生资源日渐消耗,能源枯竭和环境污染问题迫在眉睫,开发利用新能源成为当前迫切需要解决的问题。太阳能既是一次能源,又是可再生能源。它资源丰富,每年到达地球表面上的太阳辐射能约相当于130万亿吨煤,其总量属现今世界上可以开发的最大能源;它是最清洁能源之一,既可免费使用,又无需运输,不会对环境产生任何污染。太阳能发电是一种新兴的可再生能源,为资源的利用提供了新思路。目前,太阳能的利用还不是很普及,利用太阳能发电还存在成本高、转换效率低等问题,需要不断研发创新,为太阳能电池的广泛应用提供技术支持。
太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置。目前市场上的太阳能电池板按照采用的材料不同分为硅类、化合物类和有机类。硅类太阳能电池板的技术较为成熟,多为单晶硅或者多晶硅电池芯片,多晶硅较单晶硅成本低廉,但光能转化效率降低。电池板层间多采用EVA薄膜粘结固定钢化玻璃和发电主体,透明EVA材质的优劣直接影响到组件的使用寿命,暴露在空气中的EVA易老化发黄,从而影响组件的透光率。且EVA与钢化玻璃粘结强度不够,会引起EVA提早老化,影响组件寿命。
发明内容
为解决目前硅类太阳能电池板光能利用率低、使用寿命低等问题,本发明提出一种双面组件氧化石墨烯太阳能电池板。
本发明的一种双面组件氧化石墨烯太阳能电池板,所述太阳能电池板为多层层叠结构,包括从下至上设置的铝板网、钢化玻璃基板、下层EPE胶膜、晶硅电池片、氧化石墨烯膜层、上层EVA胶膜和钢化玻璃面板;所述铝板网为菱形大孔径结构;所述下层EPE胶膜为EVA/POE/EVA的共挤结构,外接触面均为EVA胶膜,所述氧化石墨烯膜层中掺杂碳纳米管;所述上层EVA胶膜层间覆有一层超细云母粉填料,上表面成型有一层聚全氟乙丙烯薄膜。
进一步的,所述铝板网孔型为菱形孔,孔径为10×20mm。
进一步的,所述钢化玻璃面板的厚度为4~6mm,钢化玻璃基板的厚度为6~8mm。
进一步的,所述下层EPE胶膜包括依次设置的第一EVA胶膜、POE胶膜和第二EVA胶膜,第一EVA胶膜和第二EVA胶膜的厚度为1~3mm,中间的POE胶膜的厚度为3~5mm。
进一步的,所述氧化石墨烯膜层内掺杂直径为1nm的碳纳米管,二者掺杂比例为1:0.2。
进一步的,所述上层EVA胶膜厚度为6~8mm。
进一步的,所述上层EVA胶膜间均匀覆有的超细云母粉填料的平均粒径为10μm,超细云母粉中SiO2的含量为49%,Al2O3的含量为30%。
进一步的,所述聚全氟乙丙烯薄膜的厚度为0.02~0.06mm。
本发明的一种双面组件氧化石墨烯太阳能电池板,至少具有以下
有益效果:
(1)本发明的太阳能电池板为双面组件,底层设置钢化玻璃基板,并以铝板网覆盖。铝板网具有不生锈、承载能力强、外形美观的特点,且可以使背面散射光和反射光通过未被铝板网覆盖的网孔间隙进入电池板内部。在保证太阳能板坚固耐用、美观大方的同时提升光伏组件的综合发电效率。
(2)本发明的在晶硅电池片上方加入一层氧化石墨烯结构,为解决氧化石墨烯因环氧基、羟基等基团破坏了石墨烯片层原本的sp2共轭结构而成为一种绝缘材料的问题,在氧化石墨烯中掺杂直径为1nm的碳纳米管(SWCNT),在没有明显破坏氧化石墨烯薄膜均一性的前提下,得到导电性均匀的氧化石墨烯薄膜。氧化石墨烯作为一种石墨烯基材料,合成方法简单、可扩展性强、成本低,用于太阳能电池板,透明度高,电荷收集能力增强。
(3)本发明的下层EPE胶膜为EVA/POE/EVA的共挤结构,中间的POE胶膜具有优异的抗渗透和抗腐蚀老化能力,主要起到阻隔作用;外接触面均为EVA胶膜,减少错片概率,降低成本。
(4)本发明的上层采用覆有聚全氟乙丙烯薄膜的EVA胶膜,聚全氟乙丙烯具有良好的耐高温性和耐腐蚀性,可以对EVA胶膜起到保护作用,且其于玻璃有很好的粘结力,可以有效改善EVA与钢化玻璃粘结强度不够,引起EVA提早老化,影响组件寿命的问题。
(5)本发明在EVA胶膜层间覆有超细云母粉填料,可以提高EVA胶膜的机械强度、韧性、附着力、抗老化性能及抗腐蚀性,且其热膨胀系数小,长时间处于高温下体积变化微小,保证了EVA胶膜的原有形态。
附图说明
图1是本发明的一种双面组件氧化石墨烯太阳能电池板的结构示意图。
具体实施方式
下面结合图示,进一步对本发明进行说明。
如图1所示,本发明的一种双面组件氧化石墨烯太阳能电池板,为多层层叠结构,包括从下至上设置的铝板网10、钢化玻璃基板9、下层EPE胶膜、晶硅电池片6、氧化石墨烯膜层5、上层EVA胶膜4和钢化玻璃面板1。所述下层EPE胶膜为EVA/POE/EVA的共挤结构,外接触面均为EVA胶膜。所述氧化石墨烯膜层5中掺杂碳纳米管;所述上层EVA胶膜4层间覆有一层超细云母粉填料3,上表面成型有一层聚全氟乙丙烯薄膜2。
具体实施时,铝板网10为菱形大孔径结构,孔型为菱形孔,孔径为10×20mm。所述钢化玻璃面板的厚度为4~6mm,钢化玻璃基板的厚度为6~8mm。所述下层EPE胶膜包括依次设置的第一EVA胶膜、POE胶膜和第二EVA胶膜,第一EVA胶膜和第二EVA胶膜的厚度为1~3mm,中间的POE胶膜的厚度为3~5mm。所述上层EVA胶膜厚度为6~8mm。所述上层EVA胶膜间均匀覆有的超细云母粉填料的平均粒径为10μm,超细云母粉中SiO2的含量为49%,Al2O3的含量为30%。所述聚全氟乙丙烯薄膜厚度为0.02~0.06mm。
实施例
在本实施例中,太阳能电池板的基板为一块厚度为8mm的钢化玻璃基板9,其下覆有一层厚度为3mm的菱形孔铝板网10,其上通过EPE胶膜与晶硅电池片6粘结固定。所述EPE胶膜为EVA/POE/EVA的共挤结构,第一EVA胶膜71和第二EVA胶膜72的厚度为3mm,中间的POE胶膜8的厚度为5mm。
在本实施例中,氧化石墨烯膜层5通过厚度为8mm的上层EVA胶膜4与钢化玻璃面板1粘结。上层EVA胶膜4上表面涂覆有超细云母粉涂层3,超细云母粉涂层的云母粉平均粒径为10μm,云母粉中SiO2的含量为49%左右,Al2O3的含量为30%左右。超细云母粉涂层3上覆有一层厚度为0.06mm的全氟乙丙烯薄膜2。钢化玻璃面板1厚度为6mm。
在本实施例中,在晶硅电池片6上还设置有掺杂碳纳米管的氧化石墨烯膜层5,氧化石墨烯与碳纳米管的掺杂比例为GO:SWCNT=1:0.2。在本实施例中,氧化石墨烯膜层5通过厚度为8mm的上层EVA胶膜4与钢化玻璃面板1粘结。上层EVA胶膜4的表面覆有一层厚度为0.06mm为全氟乙丙烯薄膜2,上层EVA胶膜4的层间均匀覆有一层超细云母粉填料3。在本实施例中,太阳能电池板的面板为一块厚度为6mm的钢化玻璃面板。
现有的太阳能电池板采用的石墨烯膜层透明度高,导电能力强,质地坚硬,性能稳定,在空气中不会被腐蚀,也不会降解,但其在收集太阳能电池内部产生的电流方面效果较差。考虑将氧气送入碳网格,使得到的氧化石墨烯透明性和电荷收集能力增加。本发明中采用氧化石墨烯作为一种石墨烯基材料,合成方法简单、可扩展和低成本。但氧化石墨烯上的环氧基、羟基等基团破坏了石墨烯片层原本的sp2共轭结构,这最终决定了氧化石墨烯是一种绝缘材料。本发明用直径为1nm的碳纳米管(SWCNT)掺杂氧化石墨烯,在没有明显破坏氧化石墨烯薄膜均一性的前提下,得到了导电性均匀的氧化石墨烯薄膜,用于太阳能电池板,透明度高,电荷收集能力增强。
以上所述仅为本发明的较佳实施例,并不用以限制本发明的思想,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (8)
1.一种双面组件氧化石墨烯太阳能电池板,其特征在于,所述太阳能电池板为多层层叠结构,包括从下至上设置的铝板网、钢化玻璃基板、下层EPE胶膜、晶硅电池片、氧化石墨烯膜层、上层EVA胶膜和钢化玻璃面板;所述铝板网为菱形大孔径结构;所述下层EPE胶膜为EVA/POE/EVA的共挤结构,外接触面均为EVA胶膜,所述氧化石墨烯膜层中掺杂碳纳米管;所述上层EVA胶膜层间覆有一层超细云母粉填料,上表面成型有一层聚全氟乙丙烯薄膜。
2.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述铝板网孔型为菱形孔,孔径为10×20mm。
3.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述钢化玻璃面板的厚度为4~6mm,钢化玻璃基板的厚度为6~8mm。
4.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述下层EPE胶膜包括依次设置的第一EVA胶膜、POE胶膜和第二EVA胶膜,第一EVA胶膜和第二EVA胶膜的厚度为1~3mm,中间的POE胶膜的厚度为3~5mm。
5.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述氧化石墨烯膜层内掺杂直径为1nm的碳纳米管,二者掺杂比例为1:0.2。
6.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述上层EVA胶膜厚度为6~8mm。
7.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述上层EVA胶膜间均匀覆有的超细云母粉填料的平均粒径为10μm,超细云母粉中SiO2的含量为49%,Al2O3的含量为30%。
8.根据权利要求1所述的双面组件氧化石墨烯太阳能电池板,其特征在于,所述聚全氟乙丙烯薄膜的厚度为0.02~0.06mm。
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