AU2018286566A1 - Monocrystalline silicon cell assembly - Google Patents
Monocrystalline silicon cell assembly Download PDFInfo
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- AU2018286566A1 AU2018286566A1 AU2018286566A AU2018286566A AU2018286566A1 AU 2018286566 A1 AU2018286566 A1 AU 2018286566A1 AU 2018286566 A AU2018286566 A AU 2018286566A AU 2018286566 A AU2018286566 A AU 2018286566A AU 2018286566 A1 AU2018286566 A1 AU 2018286566A1
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- thermally conductive
- metal plate
- adhesive layer
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010410 layer Substances 0.000 claims abstract description 178
- 229910052751 metal Inorganic materials 0.000 claims abstract description 130
- 239000002184 metal Substances 0.000 claims abstract description 130
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 87
- 239000012790 adhesive layer Substances 0.000 claims abstract description 84
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 33
- 239000011737 fluorine Substances 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 33
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 229920000098 polyolefin Polymers 0.000 claims description 38
- -1 polyethylene Polymers 0.000 claims description 29
- 239000004698 Polyethylene Substances 0.000 claims description 19
- 229920000573 polyethylene Polymers 0.000 claims description 19
- 239000011370 conductive nanoparticle Substances 0.000 claims description 16
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 15
- 229920003049 isoprene rubber Polymers 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229920005672 polyolefin resin Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 229920001780 ECTFE Polymers 0.000 claims description 3
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 claims description 3
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 claims description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000002238 attenuated effect Effects 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present application provides a monocrystalline silicon cell assembly comprising a back protective plate, a first thermally conductive encapsulant adhesive layer, a second encapsulant adhesive layer, a solar cell sheet layer, a third encapsulant adhesive layer, and a transparent cover plate, wherein the back protection plate comprises a plurality of thermally conductive elastic pillars provided on a surface of a first metal plate, a thermally conductive silicone sheet is provided between the first metal plate and the second metal plate, a plurality of metal pillars are provided on the lower surface of the second metal plate, and the lower end portion of the metal pillars is exposed to the fluorine-containing resin layer, so that the assembly has excellent heat dissipation performance, seismic performance and moisture barrier performance, ensuring that the photoelectric conversion efficiency of the monocrystalline silicon cell is not attenuated, and ensuring that the output power thereof is stable and suitable for long-term use.
Description
BACKGROUND [0002] With the development and advancement of science and technology, the demand for energy has also increased dramatically. The commonly used energy sources come from fossil energy oil, coal and natural gas. Since petrochemical energy has a limited total reserve and is non-renewable energy, the world is facing a severe energy situation, making people's exploration of emerging renewable energy such as wind, geothermal and solar energy increasingly urgent. Among them, solar energy has gradually received widespread attention as an inexhaustible green renewable energy, and solar cell related technologies are also booming. The photovoltaic back plate is located at the outermost layer on the back of the photovoltaic module, protecting the photovoltaic cell sheet from moisture and oxygen in an outdoor environment. The existing photovoltaic back plates are divided into two types: one type of photovoltaic back plates is a rubber-coated composite back plate film, in which the fluorine film or EVA film is laminated on both sides of the PET polyester film, there is a three-layer structure, and the common structure is TPT, TPE, KPK, and the like; the other type of photovoltaic back plates is a coated back plate film, the fluororesin is coated on both sides of the PET polyester film and is dried and curried to form a film. The temperature rise of the photovoltaic assembly will seriously affect the photoelectric conversion efficiency of the photovoltaic cell sheet, resulting in a significant decrease in the efficiency of the silicon cell sheet. Therefore, the heat dissipation performance and stability of the photovoltaic back plate will affect the conversion efficiency and service life of the silicon cell sheet.
SUMMARY [0003] The purpose of the present application is to overcome the deficiencies of the prior art described above and to provide a monocrystalline silicon cell assembly.
[0004] To achieve the above object, the present application proposes a monocrystalline silicon cell assembly, wherein the monocrystalline silicon cell assembly comprises:
[0005] a back protective plate, wherein the back protective plate comprises a first metal plate, a PET layer is bonded to the upper surface of the first metal plate, an ABS layer is bonded to the upper surface of the PET layer, a first polyolefin bonding layer is provided on the upper surface of the ABS layer, a plurality of first columnar grooves arranged in an array are provided on the upper surface of the first metal plate, the first columnar grooves penetrate through the first polyolefin bonding layer, the ABS layer and the PET layer and exposes the upper surface of the first metal plate, each of the first columnar grooves is embedded with a thermally conductive elastic pillar, the upper end portion of the thermally conductive elastic pillar is exposed to the first polyolefin bonding layer, the bottom surface of the thermally conductive elastic pillar is in contact with the first metal plate, the thermally conductive elastic pillar comprises a metal aluminum core, the side surface of the metal aluminum core is provided with an isoprene rubber layer, and the surface of the isoprene rubber layer is provided with a second polyolefin bonding layer;
[0006] a thermally conductive silicone sheet, wherein the thermally conductive silicone sheet is provided on the lower surface of the first metal plate;
[0007] a second metal plate, wherein the second metal plate is provided on the lower surface of the thermally conductive silicone sheet, a PEN layer is bonded to the lower surface of the second metal plate, a polyethylene layer is bonded to the lower surface of the PEN layer, a fluorine-containing resin layer is bonded to the lower surface of the polyethylene layer, a plurality of second columnar grooves arranged in an array are provided on the lower surface of the second metal plate, the second columnar grooves penetrate through the fluorine-containing resin layer, the polyethylene layer, and the PEN layer and exposes the lower surface of the second metal plate, each of the second columnar grooves is embedded with a metal pillar, the top surface of the metal pillar is in contact with the lower surface of the second metal plate, and the lower end portion of the metal pillar is exposed to the fluorine-containing resin layer;
[0008] a first thermally conductive encapsulant adhesive layer, wherein the first thermally conductive encapsulant adhesive layer covers the back protective plate, the upper end portion of the thermally conductive elastic pillar exposed to the first polyolefin bonding layer is embedded in the first thermally conductive encapsulant adhesive layer;
[0009] a second encapsulant adhesive layer, wherein the second encapsulant adhesive layer covers the first thermally conductive encapsulant adhesive layer;
[0010] a solar cell sheet layer, wherein the solar cell sheet layer is provided on the second encapsulant adhesive layer, and the solar cell sheet layer comprises a plurality of monocrystalline silicon solar cell sheets;
[0011] a third encapsulant adhesive layer, wherein the third encapsulant adhesive layer covers the solar cell sheet layer; and [0012] a transparent cover plate, wherein the transparent cover plate is provided above the third encapsulant adhesive layer.
[0013] According to the monocrystalline silicon cell assembly, further, the first metal plate and the second metal plate are made of one of aluminum, copper, stainless steel, and aluminum-magnesium alloy, both the first metal plate and the second metal plate have a thickness of 100-200 gm, the PET layer has a thickness of 2-4 mm, the ABS layer has a thickness of 0.5-1 mm, and the first polyolefin bonding layer has a thickness of 100-150 gm.
[0014] According to the monocrystalline silicon cell assembly, further, the metal aluminum core has a diameter of 3-6 mm, the isoprene rubber layer has a thickness of 5-8 mm, and the second polyolefin bonding layer has a thickness of 50-100 gm.
[0015] According to the monocrystalline silicon cell assembly, further, the PEN layer has a thickness of 2-4 mm, the polyethylene layer has a thickness of 300-600 gm, the fluorine-containing resin layer has a thickness of 50-150 gm, the metal pillar is made of aluminum or copper, both the second columnar groove and the metal pillar have a diameter of 1-2 cm, and the lower end portion of the metal pillar exposed to the fluorine-containing resin layer has a length of 0.5-2 mm.
[0016] According to the monocrystalline silicon cell assembly, further, the first thermally conductive encapsulant adhesive layer comprises a polyolefin resin and a thermally conductive nanoparticle, the thermally conductive nanoparticle is one of aluminium oxide, aluminum nitride, boron nitride, silicon nitride and magnesium oxide, the thermally conductive nanoparticle has a particle diameter of 100-200 nm, and the second encapsulant adhesive layer and the third encapsulant adhesive layer are made of polyolefin.
[0017] According to the monocrystalline silicon cell assembly, further, the first thermally conductive encapsulant adhesive layer has a thickness of 400 to 500 gm, the second encapsulant adhesive layer has a thickness of 50-100 gm, the third encapsulant adhesive layer has a thickness of 200-300 gm, and the upper end portion of the thermally conductive elastic pillar embedded in the first thermally conductive encapsulant adhesive layer has a length of 200-400 gm.
[0018] According to the monocrystalline silicon cell assembly, further, the fluorine-containing resin layer is made of polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, an ethylene-chlorotrifluoroethylene copolymer or an ethylene-tetrafluoroethylene copolymer.
[0019] Compared with the prior art, the beneficial effects of the present application are as follows.
[0020] In the monocrystalline silicon cell assembly of the present application, a first columnar groove is formed in the multilayer resin layer on the surface of the first metal plate, and a thermally conductive elastic pillar is embedded in each of the first columnar grooves so that in the process of forming a thick back plate, the plurality of thermally conductive elastic pillars form a plurality of heat dissipation paths, respectively, the heat generated by the solar cell sheet can be quickly conducted to the first metal plate, and a thermally conductive silicone sheet is provided between the first metal plate and the second metal plate which is convenient for heat transfer so that the back protective plate has excellent seismic resistance. A PEN layer, a polyethylene layer and a fluorine-containing resin layer are provided on the lower surface of the second metal plate, and a second columnar groove is formed in which the metal pillar is embedded so that while the entire back surface protection sheet has excellent thermal conductivity formation, the presence of the first and second metal sheets can effectively prevent moisture from intruding into the monocrystalline silicon cell assembly. By optimizing the structure of the thermally conductive elastic pillar, the thermally conductive elastic pillar comprises a metal aluminum core, an isoprene rubber layer and a second polyolefin bonding layer, so that the thermally conductive elastic pillar has excellent thermal conductivity and also has excellent cushioning and shock absorbing performance. The double-shock absorbing structure is designed so that the solar cell sheet will not be damaged and broken even if the monocrystalline silicon cell assembly collides. The upper end of the thermally conductive elastic pillar is embedded in the first thermally conductive encapsulant adhesive layer, and the area of the thermally conductive elastic pillar and the first thermally conductive encapsulation layer is increased, thereby further improving the stability and thermal conductivity of the monocrystalline silicon cell assembly. A polyolefin bonding layer is provided on the surface of the encapsulant back plate, and an ultra-thin second encapsulant adhesive layer is provided between the first thermally conductive encapsulant adhesive layer and the monocrystalline silicon cell sheet layer, so that the entire cell assembly is more easily bonded into one body. Compared with the existing cell assembly, by optimizing the specific structure of the monocrystalline silicon cell assembly of the present application and the specific size of each layer, the monocrystalline silicon cell assembly of the present application is thick overall, and has excellent heat dissipation performance, seismic performance and moisture barrier performance, ensuring that the photoelectric conversion efficiency of the monocrystalline silicon cell is not attenuated, and ensuring that the output power thereof is stable and suitable for long-term use.
BRIEF DESCRIPTION OF THE DRAWINGS [0021] FIG. 1 is a schematic structural view of a heat dissipation-type solar cell assembly of the present application.
[0022] FIG. 2 is a schematic structural view of a bottom surface of a thermally conductive elastic pillar of the present application.
[0023] FIG. 3 is a top view of the encapsulant protection plate of the present application.
[0024] FIG. 4 is a bottom view of the encapsulant protection plate of the present application.
DESCRIPTION OF THE EMBODIMENTS [0025] As shown in FIGs. 1-4, the present application provides a monocrystalline silicon cell assembly comprising: a back protective plate 1, wherein the back protective plate 1 comprises a first metal plate 11, a PET layer 12 is bonded to the upper surface of the first metal plate 11, an ABS layer 13 is bonded to the upper surface of the PET layer 12, a first polyolefin bonding layer 14 is provided on the upper surface of the ABS layer 13, a plurality of first columnar grooves 15 arranged in an array are provided on the upper surface of the first metal plate 11, the first columnar grooves 15 penetrate through the first polyolefin bonding layer 14, the ABS layer 13 and the PET layer 12 and exposes the upper surface of the first metal plate 11, each of the first columnar grooves 15 is embedded with a thermally conductive elastic pillar 2, the upper end portion of the thermally conductive elastic pillar 2 is exposed to the first polyolefin bonding layer 14, the bottom surface of the thermally conductive elastic pillar 2 is in contact with the first metal plate 11, the thermally conductive elastic pillar 2 comprises a metal aluminum core 21, the side surface of the metal aluminum core 21 is provided with an isoprene rubber layer 22, and the surface of the isoprene rubber layer 22 is provided with a second polyolefin bonding layer 23; a thermally conductive silicone sheet 3, wherein the thermally conductive silicone sheet 3 is provided on the lower surface of the first metal plate 11;
[0026] a second metal plate 4, wherein the second metal plate 4 is provided on the lower surface of the thermally conductive silicone sheet 3, a PEN layer 41 is bonded to the lower surface of the second metal plate 4, a polyethylene layer 42 is bonded to the lower surface of the PEN layer 41, a fluorine-containing resin layer 43 is bonded to the lower surface of the polyethylene layer 42, a plurality of second columnar grooves 44 arranged in an array are provided on the lower surface of the second metal plate 4, the second columnar grooves 44 penetrate through the fluorine-containing resin layer 43, the polyethylene layer 42, and the PEN layer 41 and exposes the lower surface of the second metal plate 4, each of the second columnar grooves 44 is embedded with a metal pillar 5, the top surface of the metal pillar 5 is in contact with the lower surface of the second metal plate 4, and the lower end portion of the metal pillar 5 is exposed to the fluorine-containing resin layer 43;
[0027] a first thermally conductive encapsulant adhesive layer 6, wherein the first thermally conductive encapsulant adhesive layer 6 covers the back protective plate 1, the upper end portion of the thermally conductive elastic pillar 2 exposed to the first polyolefin bonding layer 14 is embedded in the first thermally conductive encapsulant adhesive layer 6; a second encapsulant adhesive layer 7, wherein the second encapsulant adhesive layer 7 covers the first thermally conductive encapsulant adhesive layer 6; a solar cell sheet layer, wherein the solar cell sheet layer is provided on the second encapsulant adhesive layer, and the solar cell sheet layer comprises a plurality of monocrystalline silicon solar cell sheets 8; a third encapsulant adhesive layer 9, wherein the third encapsulant adhesive layer 9 covers the solar cell sheet layer; and a transparent cover plate 10, wherein the transparent cover plate 10 is provided above the third encapsulant adhesive layer 9.
[0028] Further, the first metal plate 11 and the second metal plate 4 are made of one of aluminum, copper, stainless steel, and aluminum-magnesium alloy, both the first metal plate 11 and the second metal plate 4 have a thickness of 100-200 pm, the PET layer 12 has a thickness of 2-4 mm, the ABS layer 13 has a thickness of 0.5-1 mm, and the first polyolefin bonding layer 14 has a thickness of 100-150 pm.
[0029] Further, the metal aluminum core 21 has a diameter of 3-6 mm, the isoprene rubber layer 22 has a thickness of 5-8 mm, and the second polyolefin bonding layer 23 has a thickness of 50-100 pm.
[0030] Further, the PEN layer 41 has a thickness of 2-4 mm, the polyethylene layer 42 has a thickness of 300-600 pm, the fluorine-containing resin layer 43 has a thickness of 50-150 pm, the metal pillar 5 is made of aluminum or copper, both the second columnar groove 44 and the metal pillar 5 have a diameter of 1-2 cm, and the lower end portion of the metal pillar 5 exposed to the fluorine-containing resin layer 43 has a length of 0.5-2 mm.
[0031] Further, the first thermally conductive encapsulant adhesive layer 6 comprises a polyolefin resin and a thermally conductive nanoparticle, the thermally conductive nanoparticle is one of aluminium oxide, aluminum nitride, boron nitride, silicon nitride and magnesium oxide, the thermally conductive nanoparticle has a particle diameter of 100-200 nm, and the second encapsulant adhesive layer 7 and the third encapsulant adhesive layer 9 are made of polyolefin.
[0032] Further, the first thermally conductive encapsulant adhesive layer 6 has a thickness of 400 to 500 μιη, the second encapsulant adhesive layer 7 has a thickness of 50-100 μιη, the third encapsulant adhesive layer 9 has a thickness of 200-300 μιη, and the upper end portion of the thermally conductive elastic pillar 2 embedded in the first thermally conductive encapsulant adhesive layer has a length of 200-400 gm.
[0033] Further, the fluorine-containing resin layer 43 is made of polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, an ethylene-chlorotrifluoroethylene copolymer or an ethylene-tetrafluoroethylene copolymer.
[0034] Embodiment 1 [0035] As shown in FIGs. 1-4, the present application provides a monocrystalline silicon cell assembly comprising: a back protective plate 1, wherein the back protective plate 1 comprises a first metal plate 11, a PET layer 12 is bonded to the upper surface of the first metal plate 11, an ABS layer 13 is bonded to the upper surface of the PET layer 12, a first polyolefin bonding layer 14 is provided on the upper surface of the ABS layer 13, a plurality of first columnar grooves 15 arranged in an array are provided on the upper surface of the first metal plate 11, the first columnar grooves 15 penetrate through the first polyolefin bonding layer 14, the ABS layer 13 and the PET layer 12 and exposes the upper surface of the first metal plate 11, each of the first columnar grooves 15 is embedded with a thermally conductive elastic pillar 2, the upper end portion of the thermally conductive elastic pillar 2 is exposed to the first polyolefin bonding layer 14, the bottom surface of the thermally conductive elastic pillar 2 is in contact with the first metal plate 11, the thermally conductive elastic pillar 2 comprises a metal aluminum core 21, the side surface of the metal aluminum core 21 is provided with an isoprene rubber layer 22, and the surface of the isoprene rubber layer 22 is provided with a second polyolefin bonding layer 23; a thermally conductive silicone sheet 3, wherein the thermally conductive silicone sheet 3 is provided on the lower surface of the first metal plate 11;
[0036] a second metal plate 4, wherein the second metal plate 4 is provided on the lower surface of the thermally conductive silicone sheet 3, a PEN layer 41 is bonded to the lower surface of the second metal plate 4, a polyethylene layer 42 is bonded to the lower surface of the PEN layer 41, a fluorine-containing resin layer 43 is bonded to the lower surface of the polyethylene layer 42, a plurality of second columnar grooves 44 arranged in an array are provided on the lower surface of the second metal plate 4, the second columnar grooves 44 penetrate through the fluorine-containing resin layer 43, the polyethylene layer 42, and the PEN layer 41 and exposes the lower surface of the second metal plate 4, each of the second columnar grooves 44 is embedded with a metal pillar 5, the top surface of the metal pillar 5 is in contact with the lower surface of the second metal plate 4, and the lower end portion of the metal pillar 5 is exposed to the fluorine-containing resin layer 43;
[0037] a first thermally conductive encapsulant adhesive layer 6, wherein the first thermally conductive encapsulant adhesive layer 6 covers the back protective plate 1, the upper end portion of the thermally conductive elastic pillar 2 exposed to the first polyolefin bonding layer 14 is embedded in the first thermally conductive encapsulant adhesive layer 6; a second encapsulant adhesive layer 7, wherein the second encapsulant adhesive layer 7 covers the first thermally conductive encapsulant adhesive layer 6; a solar cell sheet layer, wherein the solar cell sheet layer is provided on the second encapsulant adhesive layer, and the solar cell sheet layer comprises a plurality of monocrystalline silicon solar cell sheets 8; a third encapsulant adhesive layer 9, wherein the third encapsulant adhesive layer 9 covers the solar cell sheet layer; and a transparent cover plate 10, wherein the transparent cover plate 10 is provided above the third encapsulant adhesive layer 9.
[0038] The first metal plate 11 and the second metal plate 4 are made of aluminum, both the first metal plate 11 and the second metal plate 4 have a thickness of 150 pm, the PET layer 12 has a thickness of 3 mm, the ABS layer 13 has a thickness of 0.8 mm, and the first polyolefin bonding layer 14 has a thickness of 120 pm. The metal aluminum core 21 has a diameter of 5 mm, the isoprene rubber layer 22 has a thickness of 7 mm, and the second polyolefin bonding layer 23 has a thickness of 80 pm. The PEN layer 41 has a thickness of 3 mm, the polyethylene layer 42 has a thickness of 400 pm, the fluorine-containing resin layer 43 has a thickness of 100 pm, the metal pillar 5 is made of aluminum, both the second columnar groove 44 and the metal pillar 5 have a diameter of 1.5 cm, and the lower end portion of the metal pillar 5 exposed to the fluorine-containing resin layer 43 has a length of 1 mm. The first thermally conductive encapsulant adhesive layer 6 comprises a polyolefin resin and a thermally conductive nanoparticle, the thermally conductive nanoparticle is aluminum nitride, the thermally conductive nanoparticle has a particle diameter of 150 nm, and the second encapsulant adhesive layer 7 and the third encapsulant adhesive layer 9 are made of polyolefin. The first thermally conductive encapsulant adhesive layer 6 has a thickness of 450 pm, the second encapsulant adhesive layer 7 has a thickness of 90 pm, the third encapsulant adhesive layer 9 has a thickness of 250 pm, and the upper end portion of the thermally conductive elastic pillar 2 embedded in the first thermally conductive encapsulant adhesive layer has a length of 300 gm. The fluorine-containing resin layer 43 is made of polytetrafluoroethylene.
[0039] Embodiment 2 [0040] This embodiment provides another monocrystalline silicon cell assembly, which is different from Embodiment 1 in that the first metal plate 11 and the second metal plate 4 are made of copper, both the first metal plate 11 and the second metal plate 4 have a thickness of 200 gm, the PET layer 12 has a thickness of 4 mm, the ABS layer 13 has a thickness of 0.5 mm, and the first polyolefin bonding layer 14 has a thickness of 150 gm. The metal aluminum core 21 has a diameter of 3 mm, the isoprene rubber layer 22 has a thickness of 5 mm, and the second polyolefin bonding layer 23 has a thickness of 50 gm. The PEN layer 41 has a thickness of 2 mm, the polyethylene layer 42 has a thickness of 600 gm, the fluorine-containing resin layer 43 has a thickness of 150 gm, the metal pillar 5 is made of copper, both the second columnar groove 44 and the metal pillar 5 have a diameter of 1 cm, and the lower end portion of the metal pillar 5 exposed to the fluorine-containing resin layer 43 has a length of 0.5 mm. The thermally conductive nanoparticle in the first thermally conductive encapsulant adhesive layer 6 is boron nitride, the thermally conductive nanoparticle has a particle diameter of 100 nm, the first thermally conductive encapsulant adhesive layer 6 has a thickness of 500 gm, the second encapsulant adhesive layer 7 has a thickness of 100 gm, the third encapsulant adhesive layer 9 has a thickness of 300 gm, and the upper end portion of the thermally conductive elastic pillar 2 embedded in the first thermally conductive encapsulant adhesive layer has a length of 400 gm. The fluorine-containing resin layer 43 is made of polyvinylidene fluoride.
[0041] Embodiment 3 [0042] This embodiment provides another monocrystalline silicon cell assembly, which is different from Embodiment 1 in that the first metal plate 11 and the second metal plate 4 are made of stainless steel, both the first metal plate 11 and the second metal plate 4 have a thickness of 100 gm, the PET layer 12 has a thickness of 2 mm, the ABS layer 13 has a thickness of 1 mm, and the first polyolefin bonding layer 14 has a thickness of 100 gm. The metal aluminum core 21 has a diameter of 6 mm, the isoprene rubber layer 22 has a thickness of 8 mm, and the second polyolefin bonding layer 23 has a thickness of 100 gm. The PEN layer 41 has a thickness of 4 mm, the polyethylene layer 42 has a thickness of 300 gm, the fluorine-containing resin layer 43 has a thickness of 50 gm, the metal pillar 5 is made of copper, both the second columnar groove 44 and the metal pillar 5 have a diameter of 2 cm, and the lower end portion of the metal pillar 5 exposed to the fluorine-containing resin layer 43 has a length of 2 mm. The thermally conductive nanoparticle in the first thermally conductive encapsulant adhesive layer 6 is aluminium oxide, and the thermally conductive nanoparticle has a particle diameter of 200 nm. The first thermally conductive encapsulant adhesive layer 6 has a thickness of 400 pm, the second encapsulant adhesive layer 7 has a thickness of 50 pm, the third 5 encapsulant adhesive layer 9 has a thickness of 200 pm, and the upper end portion of the thermally conductive elastic pillar 2 embedded in the first thermally conductive encapsulant adhesive layer has a length of 200 pm. The fluorine-containing resin layer 43 is made of an ethylene-tetrafluoroethylene copolymer.
[0043] The above is a preferred embodiment of the present application, and it should be noted 1 0 that those skilled in the art can also make several improvements and modifications which are regarded to be within the scope of protection of the present application without departing from the principles of the present application.
Claims (7)
- WHAT IS CLAIMED IS:1. A monocrystalline silicon cell assembly, wherein the monocrystalline silicon cell assembly comprises:a back protective plate, wherein the back protective plate comprises a first metal plate, a PET layer is bonded to the upper surface of the first metal plate, an ABS layer is bonded to the upper surface of the PET layer, a first polyolefin bonding layer is provided on the upper surface of the ABS layer, a plurality of first columnar grooves arranged in an array are provided on the upper surface of the first metal plate, the first columnar grooves penetrate through the first polyolefin bonding layer, the ABS layer and the PET layer and exposes the upper surface of the first metal plate, each of the first columnar grooves is embedded with a thermally conductive elastic pillar, the upper end portion of the thermally conductive elastic pillar is exposed to the first polyolefin bonding layer, the bottom surface of the thermally conductive elastic pillar is in contact with the first metal plate, the thermally conductive elastic pillar comprises a metal aluminum core, the side surface of the metal aluminum core is provided with an isoprene rubber layer, and the surface of the isoprene rubber layer is provided with a second polyolefin bonding layer;a thermally conductive silicone sheet, wherein the thermally conductive silicone sheet is provided on the lower surface of the first metal plate;a second metal plate, wherein the second metal plate is provided on the lower surface of the thermally conductive silicone sheet, a PEN layer is bonded to the lower surface of the second metal plate, a polyethylene layer is bonded to the lower surface of the PEN layer, a fluorine-containing resin layer is bonded to the lower surface of the polyethylene layer, a plurality of second columnar grooves arranged in an array are provided on the lower surface of the second metal plate, the second columnar grooves penetrate through the fluorine-containing resin layer, the polyethylene layer, and the PEN layer and exposes the lower surface of the second metal plate, each of the second columnar grooves is embedded with a metal pillar, the top surface of the metal pillar is in contact with the lower surface of the second metal plate, and the lower end portion of the metal pillar is exposed to the fluorine-containing resin layer;a first thermally conductive encapsulant adhesive layer, wherein the first thermally conductive encapsulant adhesive layer covers the back protective plate, the upper end portion of the thermally conductive elastic pillar exposed to the first polyolefin bonding layer is embedded in the first thermally conductive encapsulant adhesive layer;a second encapsulant adhesive layer, wherein the second encapsulant adhesive layer covers the first thermally conductive encapsulant adhesive layer;a solar cell sheet layer, wherein the solar cell sheet layer is provided on the second encapsulant adhesive layer, and the solar cell sheet layer comprises a plurality of monocrystalline silicon solar cell sheets;a third encapsulant adhesive layer, wherein the third encapsulant adhesive layer covers the solar cell sheet layer; and a transparent cover plate, wherein the transparent cover plate is provided above the third encapsulant adhesive layer.
- 2. The monocrystalline silicon cell assembly according to claim 1, wherein the first metal plate and the second metal plate are made of one of aluminum, copper, stainless steel, and aluminum-magnesium alloy, both the first metal plate and the second metal plate have a thickness of 100-200 pm, the PET layer has a thickness of 2-4 mm, the ABS layer has a thickness of 0.5-1 mm, and the first polyolefin bonding layer has a thickness of 100-150 pm.
- 3. The monocrystalline silicon cell assembly according to claim 2, wherein the metal aluminum core has a diameter of 3-6 mm, the isoprene rubber layer has a thickness of 5-8 mm, and the second polyolefin bonding layer has a thickness of 50-100 pm.
- 4. The monocrystalline silicon cell assembly according to claim 2, wherein the PEN layer has a thickness of 2-4 mm, the polyethylene layer has a thickness of 300-600 pm, the fluorine-containing resin layer has a thickness of 50-150 pm, the metal pillar is made of aluminum or copper, both the second columnar groove and the metal pillar have a diameter of 1-2 cm, and the lower end portion of the metal pillar exposed to the fluorine-containing resin layer has a length of 0.5-2 mm.
- 5. The monocrystalline silicon cell assembly according to claim 1, wherein the first thermally conductive encapsulant adhesive layer comprises a polyolefin resin and a thermally conductive nanoparticle, the thermally conductive nanoparticle is one of aluminum oxide, aluminum nitride, boron nitride, silicon nitride and magnesium oxide, the thermally conductive nanoparticle has a particle diameter of 100-200 nm, and the second encapsulant adhesive layer and the third encapsulant adhesive layer are made of polyolefin.
- 6. The monocrystalline silicon cell assembly according to claim 5, wherein the first thermally conductive encapsulant adhesive layer has a thickness of 400 to 500 pm, the second encapsulant adhesive layer has a thickness of 50-100 pm, the third encapsulant adhesive layer has a thickness of 200-300 gm, and the upper end portion of the thermally conductive elastic pillar embedded in the first thermally conductive encapsulant adhesive layer has a length of 200-400 gm.
- 7. The monocrystalline silicon cell assembly according to claim 1, wherein the5 fluorine-containing resin layer is made of polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, an ethylene-chlorotrifluoroethylene copolymer or an ethylene-tetrafluoroethylene copolymer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810385317.X | 2018-04-26 | ||
| CN201810385317.XA CN108389923B (en) | 2018-04-26 | 2018-04-26 | Monocrystalline silicon battery component |
| PCT/CN2018/111686 WO2019205532A1 (en) | 2018-04-26 | 2018-10-24 | Monocrystalline silicon battery assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2018286566A1 true AU2018286566A1 (en) | 2019-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2018286566A Abandoned AU2018286566A1 (en) | 2018-04-26 | 2018-10-24 | Monocrystalline silicon cell assembly |
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| Country | Link |
|---|---|
| CN (1) | CN108389923B (en) |
| AU (1) | AU2018286566A1 (en) |
| WO (1) | WO2019205532A1 (en) |
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|---|---|---|---|---|
| CN108389923B (en) * | 2018-04-26 | 2020-08-04 | 江苏久联新能源科技有限公司 | Monocrystalline silicon battery component |
| CN110656371A (en) * | 2019-09-19 | 2020-01-07 | 安徽若水化工有限公司 | Gallium-indium-doped heat-conducting flame-retardant monocrystalline silicon material for solar cell |
Family Cites Families (11)
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| CN202434552U (en) * | 2011-12-16 | 2012-09-12 | 新高电子材料（中山）有限公司 | Solar back panel prepared from weather-resistant coating with high thermal conductivity and solar panel |
| JP5813519B2 (en) * | 2012-01-16 | 2015-11-17 | 三菱電機株式会社 | Manufacturing method of solar cell module |
| CN102664208B (en) * | 2012-05-09 | 2014-12-10 | 华东理工大学 | Synergistic heat radiation solar cell assembly and preparation method thereof |
| WO2015139284A1 (en) * | 2014-03-21 | 2015-09-24 | Dupont (China) Research & Development And Management Co., Ltd. | Integrated back-sheets for back-contact solar cell modules |
| FR3029367B1 (en) * | 2014-11-27 | 2016-11-18 | Systovi | PHOTOVOLTAIC PANEL WITH RADIATORS |
| CN204733125U (en) * | 2015-05-14 | 2015-10-28 | 开县伟朋科技服务中心 | Bendable solar module |
| CN107093635B (en) * | 2017-03-29 | 2019-02-12 | 江苏福克斯新能源科技有限公司 | A kind of photovoltaic module and preparation method thereof |
| CN106847972B (en) * | 2017-03-29 | 2018-08-28 | 江苏福克斯新能源科技有限公司 | A kind of solar cell module and preparation method thereof |
| CN106992222B (en) * | 2017-03-29 | 2018-08-28 | 江苏福克斯新能源科技有限公司 | A kind of heat radiating type solar cell module and preparation method thereof |
| CN108389923B (en) * | 2018-04-26 | 2020-08-04 | 江苏久联新能源科技有限公司 | Monocrystalline silicon battery component |
| CN208062075U (en) * | 2018-04-26 | 2018-11-06 | 海门市采薇纺织科技有限公司 | A kind of monocrystalline silicon battery component |
-
2018
- 2018-04-26 CN CN201810385317.XA patent/CN108389923B/en active Active
- 2018-10-24 WO PCT/CN2018/111686 patent/WO2019205532A1/en active Application Filing
- 2018-10-24 AU AU2018286566A patent/AU2018286566A1/en not_active Abandoned
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| Publication number | Publication date |
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| WO2019205532A1 (en) | 2019-10-31 |
| CN108389923A (en) | 2018-08-10 |
| CN108389923B (en) | 2020-08-04 |
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