CN116791201A - High conductivity ruthenium metal film and preparation method thereof - Google Patents

High conductivity ruthenium metal film and preparation method thereof Download PDF

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CN116791201A
CN116791201A CN202210250648.9A CN202210250648A CN116791201A CN 116791201 A CN116791201 A CN 116791201A CN 202210250648 A CN202210250648 A CN 202210250648A CN 116791201 A CN116791201 A CN 116791201A
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ruthenium metal
ruthenium
metal layer
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陈允忠
胡凤霞
沈保根
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Institute of Physics of CAS
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Abstract

本发明涉及高电导钌金属薄膜及其制备方法。根据一实施例,一种形成钌金属薄膜的方法可包括使用金属钌或者钌氧化物作为生长源或靶材,在具有钙钛矿晶体结构的衬底上外延或取向生长钌金属层。所述衬底的表面可以是(110)晶面,所形成的钌金属层是单晶钌金属层,并且其表面是(002)晶面。所述衬底可包括LaAlO3

The invention relates to a high conductivity ruthenium metal film and a preparation method thereof. According to an embodiment, a method of forming a ruthenium metal film may include using metallic ruthenium or ruthenium oxide as a growth source or target material to epitaxially or directionally grow a ruthenium metal layer on a substrate having a perovskite crystal structure. The surface of the substrate may be a (110) crystal plane, the formed ruthenium metal layer is a single crystal ruthenium metal layer, and its surface is a (002) crystal plane. The substrate may include LaAlO 3 .

Description

高电导钌金属薄膜及其制备方法High conductivity ruthenium metal film and preparation method thereof

技术领域Technical field

本发明总体上涉及材料领域,更特别地,涉及一种高电导钌金属薄膜及其制备方法。The present invention generally relates to the field of materials, and more particularly, to a high conductivity ruthenium metal film and a preparation method thereof.

背景技术Background technique

钌是六种铂族金属之一,具有较低的电阻率和较好的化学稳定性,同时钌具有优异的催化活性,因此在电子信息、电化学等领域有广泛的应用。除催化作用外,金属钌的薄膜被广泛运用于电子信息工业的半导体器件中,在集成电路中作为铜的粘结层/扩散阻挡层,磁记录媒介中作为中间层/籽晶层,此外还在抗氧化保护层材料和电接触材料等方面具有广泛的应用。Ruthenium is one of the six platinum group metals. It has low resistivity and good chemical stability. At the same time, ruthenium has excellent catalytic activity, so it is widely used in electronic information, electrochemistry and other fields. In addition to its catalytic effect, ruthenium metal thin films are widely used in semiconductor devices in the electronic information industry. They are used as copper bonding layers/diffusion barrier layers in integrated circuits and as intermediate layers/seed layers in magnetic recording media. In addition, It has a wide range of applications in anti-oxidation protective layer materials and electrical contact materials.

金属钌在常温下为密排六方结构,晶格参数为a=b=270.59pm,c=428.15pm,轴角α=β=90°,γ=120°。钌的熔点高达大约2310℃,需要在较高的温度下进行沉积,一般在Si、玻璃、Al2O3、TiO2等衬底上沉积,获得的是非晶和多晶样品,而难以获得具有良好单晶形态的金属钌。Metal ruthenium has a close-packed hexagonal structure at room temperature. The lattice parameters are a=b=270.59pm, c=428.15pm, and the axis angles α=β=90° and γ=120°. The melting point of ruthenium is as high as about 2310°C, and it needs to be deposited at a higher temperature. It is generally deposited on Si, glass, Al 2 O 3 , TiO 2 and other substrates. Amorphous and polycrystalline samples are obtained, and it is difficult to obtain samples with Ruthenium metal in good single crystal form.

发明内容Contents of the invention

本发明提供一种制备钌金属薄膜的方法,其能够制备高质量的单晶形态的金属钌薄膜,所得钌薄膜具有高的电导率,适合于在各种应用中使用。The present invention provides a method for preparing a ruthenium metal film, which can prepare a high-quality single crystal ruthenium metal film. The obtained ruthenium film has high electrical conductivity and is suitable for use in various applications.

本发明的一个方面提供一种形成钌金属薄膜的方法,包括使用金属钌或者钌氧化物作为生长源或靶材,在具有钙钛矿晶体结构的衬底上外延或取向生长钌金属层。One aspect of the present invention provides a method for forming a ruthenium metal film, which includes using metal ruthenium or ruthenium oxide as a growth source or target material to epitaxially or directionally grow a ruthenium metal layer on a substrate with a perovskite crystal structure.

在一些实施例中,所述钌金属层是单晶钌金属层In some embodiments, the ruthenium metal layer is a single crystal ruthenium metal layer

在一些实施例中,所述具有钙钛矿晶体结构的衬底的表面是(110)晶面,所述单晶钌金属层的表面是(002)晶面。In some embodiments, the surface of the substrate having a perovskite crystal structure is a (110) crystal plane, and the surface of the single crystal ruthenium metal layer is a (002) crystal plane.

在一些实施例中,所述具有钙钛矿晶体结构的衬底包括LaAlO3。In some embodiments, the substrate having a perovskite crystal structure includes LaAlO3.

在一些实施例中,所述具有钙钛矿晶体结构的衬底与所述单晶钌金属层的晶格匹配度在±3%的范围内。In some embodiments, a lattice matching degree between the substrate having a perovskite crystal structure and the single crystal ruthenium metal layer is within a range of ±3%.

在一些实施例中,所述钌金属层具有20μΩcm以下的室温电阻率,优选10μΩcm以下的室温电阻率。In some embodiments, the ruthenium metal layer has a room temperature resistivity of less than 20 μΩcm, preferably less than 10 μΩcm.

在一些实施例中,所述方法还包括:在外延或取向生长钌金属层时,使用氩气、氮气或者氧气作为载气。In some embodiments, the method further includes using argon, nitrogen or oxygen as a carrier gas when epitaxially or directionally growing the ruthenium metal layer.

在一些实施例中,在具有钙钛矿晶体结构的衬底上外延或取向生长钌金属层时的气压在1Pa以下,温度在250-750℃的范围内。In some embodiments, the gas pressure during the epitaxial or directional growth of the ruthenium metal layer on the substrate with a perovskite crystal structure is below 1 Pa, and the temperature is in the range of 250-750°C.

在一些实施例中,使用物理气相沉积工艺来外延或取向生长所述钌金属层,所述物理气相沉积工艺包括磁控溅射、脉冲激光沉积或离子束溅射。In some embodiments, the ruthenium metal layer is epitaxially or orientationally grown using a physical vapor deposition process, including magnetron sputtering, pulsed laser deposition, or ion beam sputtering.

本发明的另一方面还提供一种单晶钌金属层,其根据上述方法制备而成。Another aspect of the present invention also provides a single crystal ruthenium metal layer, which is prepared according to the above method.

本发明的上述和其他特征和优点将从下面结合附图对具体实施例的描述而变得显而易见。The above and other features and advantages of the present invention will become apparent from the following description of specific embodiments taken in conjunction with the accompanying drawings.

附图说明Description of the drawings

图1示出根据本发明一实施例的用于制备钌金属薄膜的衬底的晶体结构图。FIG. 1 shows a crystal structure diagram of a substrate for preparing a ruthenium metal film according to an embodiment of the present invention.

图2示出根据本发明一实施例制备的钌金属薄膜的X射线衍射曲线图。Figure 2 shows an X-ray diffraction curve of a ruthenium metal film prepared according to an embodiment of the present invention.

图3示出根据本发明一实施例制备的钌金属薄膜的扫描隧道显微镜照片。Figure 3 shows a scanning tunneling microscope photograph of a ruthenium metal film prepared according to an embodiment of the present invention.

图4示出根据本发明一实施例制备的钌金属薄膜的电阻率随温度变化的曲线图。FIG. 4 shows a graph of the resistivity of a ruthenium metal film prepared according to an embodiment of the present invention as a function of temperature.

具体实施方式Detailed ways

下面,将参考附图详细地描述根据本申请的示例实施例。注意,附图可能不是按比例绘制的。显然,所描述的实施例仅仅是本申请的一部分实施例,而不是本申请的全部实施例,本申请不受这里描述的示例实施例的限制。Hereinafter, example embodiments according to the present application will be described in detail with reference to the accompanying drawings. Note that the figures may not be drawn to scale. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application, and the present application is not limited by the example embodiments described here.

本发明提出一种制备单晶钌金属薄膜的方法,利用具有钙钛矿晶体结构的衬底,在其上通过薄膜物理气相沉积方法来形成钌金属薄膜。本发明的方法可以制备高质量的单晶钌金属薄膜,所得钌金属薄膜具有良好的表面均匀性、连续性和致密性,归因于优异的晶体质量,所得钌金属薄膜具有高的电导率,因此适合在各种应用中使用。The present invention proposes a method for preparing a single crystal ruthenium metal film, which uses a substrate with a perovskite crystal structure to form a ruthenium metal film on the substrate through a thin film physical vapor deposition method. The method of the present invention can prepare high-quality single crystal ruthenium metal films. The obtained ruthenium metal films have good surface uniformity, continuity and density. Due to the excellent crystal quality, the obtained ruthenium metal films have high electrical conductivity. Therefore suitable for use in a variety of applications.

图1示出钙钛矿晶体结构的示意图。钙钛矿原本是指CaTiO3,其具有图1所示的立方晶体结构。许多可以用化学式ABO3表示的材料也具有这种晶体结构,因此将它们都称为钙钛矿晶体结构,其中A原子占据立方体的顶点位置,B原子占据立方体的体心位置,O原子占据立方体的面心位置。Figure 1 shows a schematic diagram of the perovskite crystal structure. Perovskite originally refers to CaTiO 3 , which has a cubic crystal structure as shown in Figure 1. Many materials that can be represented by the chemical formula ABO 3 also have this crystal structure, so they are all called perovskite crystal structures, in which A atoms occupy the vertex position of the cube, B atoms occupy the body center position of the cube, and O atoms occupy the cube The center position of the face.

在本发明的实施例中,使用具有钙钛矿晶体结构的材质作为衬底,在其上形成钌金属层。如上所述,衬底材料可以用ABO3来表示,其中A包括稀土或碱土金属,B包括过渡金属或者Al,虽然Al属于IIIA族元素,但是有时候也将其视为过渡金属。可以选择适当的衬底材料ABO3,使得衬底与单晶钌金属层的晶格匹配度在±5%的范围内,更优选地在±3%的范围内。在一些实施例中,衬底可以是LaAlO3晶体。In embodiments of the present invention, a material with a perovskite crystal structure is used as a substrate, and a ruthenium metal layer is formed thereon. As mentioned above, the substrate material can be represented by ABO 3 , where A includes rare earth or alkaline earth metals, and B includes transition metals or Al. Although Al belongs to Group IIIA elements, it is sometimes regarded as a transition metal. An appropriate substrate material ABO 3 can be selected so that the lattice matching degree between the substrate and the single crystal ruthenium metal layer is within ±5%, more preferably within ±3%. In some embodiments, the substrate may be LaAlO crystal.

在一些实施例中,具有钙钛矿晶体结构的衬底的(110)晶面可以用作生长单晶钌薄膜的生长表面。例如,可以在LaAlO3晶体的(110)晶面上生长单晶钌薄膜。In some embodiments, the (110) crystal plane of a substrate having a perovskite crystal structure can be used as a growth surface for growing a single crystal ruthenium film. For example, a single crystal ruthenium film can be grown on the (110) crystal plane of LaAlO3 crystal.

生长单晶钌薄膜的方法可以包括各种薄膜物理气相沉积方法,例如但不限于磁控溅射、脉冲激光沉积、离子束溅射等,由于这些工艺都是相关领域已知的,这里不再一一详细描述。在这些工艺中,可以使用金属钌或者钌氧化物材料作为生长源或者靶材。应理解,虽然使用钌氧化物作为靶材,但是由于钌元素具有优异的化学稳定性,不易被氧化,而且通过选择适当的衬底,因此仍可以形成金属钌薄膜,而不是二氧化钌薄膜。The method of growing a single crystal ruthenium film may include various thin film physical vapor deposition methods, such as but not limited to magnetron sputtering, pulsed laser deposition, ion beam sputtering, etc. Since these processes are all known in the relevant fields, they will not be discussed here. Describe in detail one by one. In these processes, metallic ruthenium or ruthenium oxide materials can be used as growth sources or targets. It should be understood that although ruthenium oxide is used as the target material, because the ruthenium element has excellent chemical stability and is not easily oxidized, and by selecting an appropriate substrate, a metal ruthenium film instead of a ruthenium dioxide film can still be formed.

利用上述物理气相沉积工艺在衬底上外延或取向生长钌金属薄膜时,可以先抽真空,然后再通入载气,在预定的气压下执行沉积工艺。例如,可以使用常用的氩气或氮气作为载气,或者也可以使用氧气作为载气。由于钌元素的优异的化学稳定性,在使用少量的氧气作为载气时,也不会形成二氧化钌薄膜。载气的气压可以在1Pa以下,例如可以为100毫托、200毫托或者500毫托。生长温度可以在250-750℃的范围内,优选地在300-700℃的范围内。When using the above-mentioned physical vapor deposition process to epitaxially or directionally grow a ruthenium metal film on a substrate, a vacuum can be first evacuated, and then a carrier gas can be introduced to perform the deposition process under a predetermined gas pressure. For example, commonly used argon or nitrogen can be used as the carrier gas, or oxygen can also be used as the carrier gas. Due to the excellent chemical stability of the ruthenium element, a ruthenium dioxide film will not be formed when a small amount of oxygen is used as the carrier gas. The pressure of the carrier gas may be below 1 Pa, for example, 100 mTorr, 200 mTorr or 500 mTorr. The growth temperature may be in the range of 250-750°C, preferably in the range of 300-700°C.

可以理解,选取适当的衬底对于成膜质量是非常重要的。但是,除了晶格匹配度之外,还有一些其他因素也是非常重要的,例如生长晶面的平整度、生长界面亲和性等因素。本发明利用钙钛矿晶体衬底,尤其是LaAlO3衬底,并且将(110)晶面作为生长表面,获得了高质量单晶结构的钌金属薄膜。图2示出了在LaAlO3衬底的(110)晶面上生长获得的钌金属薄膜的X射线衍射(XRD)曲线图,生长工艺为磁控溅射,靶材为二氧化钌,载气采用氩气,压强为200mTorr,温度为420摄氏度左右。从图2可以看出,所得样品的XRD曲线只有一个Ru(002)峰,说明获得了良好质量的单晶或者说高度取向的钌金属层,没有缺陷或杂相形成。图3是该样品的扫描隧道显微镜照片,其清楚地显示了在该衬底上形成的高质量单晶钌薄膜,该薄膜具有高度一致的取向结构,其中钌薄膜的表面是(002)晶面。如图3所示,所形成的单晶钌薄膜是连续单晶结构,具有良好的一致性和致密性,远远优于现有技术中的成膜质量。It can be understood that selecting an appropriate substrate is very important for film formation quality. However, in addition to lattice matching, there are some other factors that are also very important, such as the flatness of the growth crystal plane, the affinity of the growth interface and other factors. The present invention uses a perovskite crystal substrate, especially a LaAlO 3 substrate, and uses the (110) crystal plane as the growth surface to obtain a high-quality single-crystal structure ruthenium metal film. Figure 2 shows the X-ray diffraction (XRD) curve of the ruthenium metal film grown on the (110) crystal plane of the LaAlO 3 substrate. The growth process is magnetron sputtering, the target material is ruthenium dioxide, and the carrier gas Argon gas is used, the pressure is 200mTorr, and the temperature is about 420 degrees Celsius. As can be seen from Figure 2, the XRD curve of the obtained sample has only one Ru(002) peak, indicating that a good quality single crystal or highly oriented ruthenium metal layer was obtained without defects or impurity phases. Figure 3 is a scanning tunneling microscope photo of the sample, which clearly shows the high-quality single-crystal ruthenium film formed on the substrate. The film has a highly consistent orientation structure, in which the surface of the ruthenium film is the (002) crystal plane. . As shown in Figure 3, the formed single crystal ruthenium film has a continuous single crystal structure, has good consistency and density, and is far superior to the film formation quality in the existing technology.

图4示出了对图3所示的样品进行测量得到的电阻率随温度的变化曲线。从图4的实验数据可以看出,在室温下单晶钌金属薄膜的电阻率在10μΩcm以下,为大约9.7μΩcm左右,优于Pt金属的室温电阻率10.1μΩcm。这说明良好单晶结构的钌薄膜具有更小的电阻率。可以理解,当选择不同的衬底材料时,由于晶格匹配度有所差异,所形成的钌金属膜的单晶质量也会有所差异,因此钌金属薄膜的电阻率会有所波动,例如可能会超过10μΩcm,但是一般而言,在钙钛矿晶体结构的衬底上形成的钌金属膜的电阻率都在20μΩcm以下。Figure 4 shows the measured resistivity as a function of temperature for the sample shown in Figure 3. It can be seen from the experimental data in Figure 4 that the resistivity of the single crystal ruthenium metal film at room temperature is below 10 μΩcm, about 9.7 μΩcm, which is better than the room temperature resistivity of Pt metal, which is 10.1 μΩcm. This shows that the ruthenium film with good single crystal structure has smaller resistivity. It can be understood that when different substrate materials are selected, due to differences in lattice matching, the single crystal quality of the formed ruthenium metal film will also be different, so the resistivity of the ruthenium metal film will fluctuate, such as It may exceed 10μΩcm, but generally speaking, the resistivity of ruthenium metal films formed on substrates with a perovskite crystal structure is below 20μΩcm.

如上所述,本发明能形成具有良好单晶结构的金属钌薄膜,除了可应用在传统电子信息、电化学等领域可广泛应用之外,生长在钙钛矿衬底上的高质量外延单晶钌金属膜在氧化物电子学以及自旋电子学中也有广泛的应用,特别是薄膜电阻器、铁电随机存储器、动态随机存储器、磁性隧道结、有机薄膜晶体管、磁性热电器件例如自旋塞贝克效应器件、超级电容器、电化学电解池、光电解水以及燃料电池的电极等领域都有重大的基础研究和工业应用价值。As mentioned above, the present invention can form a metal ruthenium film with a good single crystal structure. In addition to being widely used in traditional electronic information, electrochemistry and other fields, the present invention can also form high-quality epitaxial single crystals grown on perovskite substrates. Ruthenium metal films are also widely used in oxide electronics and spin electronics, especially thin film resistors, ferroelectric random access memories, dynamic random access memories, magnetic tunnel junctions, organic thin film transistors, and magnetic thermoelectric devices such as the spin Seebeck effect. Devices, supercapacitors, electrochemical electrolysis cells, photoelectrolysis of water, and fuel cell electrodes all have significant basic research and industrial application value.

以上结合具体实施例描述了本申请的基本原理,但是,需要指出的是,在本申请中提及的优点、优势、效果等仅是示例而非限制,不能认为这些优点、优势、效果等是本申请的各个实施例必须具备的。另外,上述公开的具体细节仅是为了示例的作用和便于理解的作用,而非限制,上述细节并不限制本申请为必须采用上述具体的细节来实现。The basic principles of the present application have been described above in conjunction with specific embodiments. However, it should be pointed out that the advantages, advantages, effects, etc. mentioned in this application are only examples and not limitations. These advantages, advantages, effects, etc. cannot be considered to be Each embodiment of this application must have. In addition, the specific details disclosed above are only for the purpose of illustration and to facilitate understanding, and are not limiting. The above details do not limit the application to be implemented using the above specific details.

本申请中涉及的器件、装置、设备、系统的方框图仅作为例示性的例子并且不意图要求或暗示必须按照方框图示出的方式进行连接、布置、配置。如本领域技术人员将认识到的,可以按任意方式连接、布置、配置这些器件、装置、设备、系统。诸如“包括”、“包含”、“具有”等等的词语是开放性词汇,指“包括但不限于”,且可与其互换使用。这里所使用的词汇“或”和“和”指词汇“和/或”,且可与其互换使用,除非上下文明确指示不是如此。这里所使用的词汇“诸如”指词组“诸如但不限于”,且可与其互换使用。The block diagrams of the devices, devices, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, devices, equipment, and systems may be connected, arranged, and configured in any manner. Words such as "includes," "includes," "having," etc. are open-ended terms that mean "including, but not limited to," and may be used interchangeably therewith. As used herein, the words "or" and "and" refer to the words "and/or" and are used interchangeably therewith unless the context clearly dictates otherwise. As used herein, the word "such as" refers to the phrase "such as, but not limited to," and may be used interchangeably therewith.

还需要指出的是,在本申请的装置、设备和方法中,各部件或各步骤是可以分解和/或重新组合的。这些分解和/或重新组合应视为本申请的等效方案。It should also be pointed out that in the device, equipment and method of the present application, each component or each step can be decomposed and/or recombined. These decompositions and/or recombinations shall be considered equivalent versions of this application.

提供所公开的方面的以上描述以使本领域的任何技术人员能够做出或者使用本申请。对这些方面的各种修改对于本领域技术人员而言是非常显而易见的,并且在此定义的一般原理可以应用于其他方面而不脱离本申请的范围。因此,本申请不意图被限制到在此示出的方面,而是按照与在此公开的原理和新颖的特征一致的最宽范围。The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, this application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

为了例示和描述的目的已经给出了以上描述。此外,此描述不意图将本申请的实施例限制到在此公开的形式。尽管以上已经讨论了多个示例方面和实施例,但是本领域技术人员将认识到其某些变型、修改、改变、添加和子组合。The foregoing description has been presented for the purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present application to the form disclosed herein. Although various example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims (10)

1.一种形成钌金属薄膜的方法,包括使用金属钌或者钌氧化物作为生长源或靶材,在具有钙钛矿晶体结构的衬底上外延或取向生长钌金属层。1. A method of forming a ruthenium metal film, including using metal ruthenium or ruthenium oxide as a growth source or target material, and epitaxially or directionally growing a ruthenium metal layer on a substrate with a perovskite crystal structure. 2.如权利要求1所述的方法,其中,所述钌金属层是单晶钌金属层。2. The method of claim 1, wherein the ruthenium metal layer is a single crystal ruthenium metal layer. 3.如权利要求2所述的方法,其中,所述具有钙钛矿晶体结构的衬底的表面是(110)晶面,所述单晶钌金属层的表面是(002)晶面。3. The method of claim 2, wherein the surface of the substrate having a perovskite crystal structure is a (110) crystal plane, and the surface of the single crystal ruthenium metal layer is a (002) crystal plane. 4.如权利要求1所述的方法,其中,所述具有钙钛矿晶体结构的衬底包括LaAlO34. The method of claim 1, wherein the substrate having a perovskite crystal structure includes LaAlO3 . 5.如权利要求1所述的方法,其中,所述具有钙钛矿晶体结构的衬底与所述单晶钌金属层的晶格匹配度在±3%的范围内。5. The method of claim 1, wherein a lattice matching degree of the substrate having a perovskite crystal structure and the single crystal ruthenium metal layer is within a range of ±3%. 6.如权利要求1所述的方法,其中,所述钌金属层具有20μΩcm以下的室温电阻率,优选10μΩcm以下的室温电阻率。6. The method of claim 1, wherein the ruthenium metal layer has a room temperature resistivity of less than 20 μΩcm, preferably less than 10 μΩcm. 7.如权利要求1所述的方法,还包括:7. The method of claim 1, further comprising: 在外延或取向生长钌金属层时,使用氩气、氮气或者氧气作为载气。When epitaxially or directionally growing a ruthenium metal layer, argon, nitrogen or oxygen is used as a carrier gas. 8.如权利要求1所述的方法,其中,在具有钙钛矿晶体结构的衬底上外延或取向生长钌金属层时的气压在1Pa以下,温度在250-750℃的范围内。8. The method of claim 1, wherein the gas pressure during the epitaxial or directional growth of the ruthenium metal layer on the substrate having a perovskite crystal structure is below 1 Pa, and the temperature is in the range of 250-750°C. 9.如权利要求1所述的方法,其中,使用物理气相沉积工艺来外延或取向生长所述钌金属层,所述物理气相沉积工艺包括磁控溅射、脉冲激光沉积或离子束溅射。9. The method of claim 1, wherein the ruthenium metal layer is epitaxially or orientationally grown using a physical vapor deposition process, including magnetron sputtering, pulsed laser deposition, or ion beam sputtering. 10.一种单晶钌金属层,其根据权利要求1至9中的任一项所述的方法形成。10. A single crystal ruthenium metal layer formed according to the method of any one of claims 1 to 9.
CN202210250648.9A 2022-03-15 2022-03-15 High conductivity ruthenium metal film and preparation method thereof Pending CN116791201A (en)

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