CN109234680B - A kind of preparation method of ultra-thin stratiform organic molecule ferroelectric thin film and the application of the ferroelectric thin film - Google Patents
A kind of preparation method of ultra-thin stratiform organic molecule ferroelectric thin film and the application of the ferroelectric thin film Download PDFInfo
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Abstract
The present invention discloses a kind of preparation method of ultra-thin stratiform organic molecule ferroelectric thin film and the application of the ferroelectric thin film, the ferroelectric thin film the preparation method comprises the following steps: the two-dimensional layer material of graphene or boron nitride is transferred to silicon chip surface, as substrate, and using perchloric acid imidazoles powder as growth source；Growth source and substrate are placed in the quartz ampoule of tube furnace, the two spacing distance is placed, and is vacuumized to quartz ampoule；Start tube furnace, temperature is 100~110 DEG C, keeps the temperature 1~2h at heating furnace body to growth source position, and growth source is volatilized by gas phase, and deposition forms perchloric acid imidazoles ferroelectric thin film on graphene or boron nitride.Pass through Van der Waals for effect faint between organic molecular film and between organic molecule and substrate, using vapor deposition, the superthin layer ferroelectric thin film of molecular level thickness can be obtained, and excellent ferroelectricity is found in ultra-thin layer film, its thickness minimum can be monolayer (1.2nm), can be applied to the electronic components such as ferro-electric field effect transistor, ferroelectric memory.
Description
Technical field
The present invention relates to the applications of a kind of preparation method of ferroelectric thin film and ferroelectric thin film obtained, in particular to a kind of super
The preparation method of lamelliform organic molecule ferroelectric thin film and the application of ferroelectric thin film obtained by this method, belong to ferroelectric material
Technical field.
Background technique
Ferroelectric material is the electroactive material to serve many purposes, has spontaneous polarization in certain temperature range,
It is very sensitive to temperature change, external electric field variation, mechanical stress, under the action of external electric field, the polarization direction meeting of material itself
Generate corresponding variation.Ferroelectric material sensing, driving, data storage, in terms of have broad application prospects, Ren Men
Develop various types of novel electronic product on the basis of this.
The more inorganic perovskite ferroelectric materials of current application can not all be kept away such as lead zirconate titanate (PZT), barium titanate (BTO)
What is exempted from includes heavy metal element, and use process can be to environmental pollution.In recent years, organic ferroelectric material is because having weight itself
Gently, the advantages that mechanical elasticity is excellent, environmentally friendly reliable, has been assigned very big concern, becomes the interested hot spot material of people.People
Study organic ferroelectric material and be made that some extremely important and have perspective work, carry out continuous using the same of work
When, it has been found that more novel organic ferroelectric materials.
Perchloric acid imidazoles is a kind of novel organic ferroelectric material with high spontaneous polarization properties, ferroelectric transition temperature compared with
Height reaches 373.6K, and spontaneous polarization properties are up to 9.3uC/cm2, piezoelectric coefficient d33Reach 41pC/N, is pole in molecule ferroelectric
High.These properties are all strong to issue a certificate, and perchloric acid imidazoles is a kind of excellent molecule ferroelectric.
Based on the observation to molecule ferroelectric applications, it has been found that although there are many research to molecule ferroelectric crystal, molecule
The system research of ferroelectric thin film is relatively fewer.Traditional method for manufacturing thin film has sol-gal process, sputtering method, pulse laser deposition
Method, molecular beam epitaxy, chemical solution deposition etc., wherein sputtering method, pulsed laser deposition, molecular beam epitaxy are usual
It is carried out under higher temperature or high-energy, but perchloric acid imidazoles need to avoid bearing excessively high temperature or excessively high as organic material
Energy, prevent molecule to be destroyed decomposition during heating；Conventional sol-gal process and chemical solution deposition needs make
Perchloric acid imidazoles is dissolved with chemical reagent or needs to introduce colloidal sol using metal, alkoxide, this can be miscellaneous to increasing in preparation process
The pollution of matter and other elements is also unfavorable for the preparation of perchloric acid imidazoles ferroelectric material.
Moreover, the existing thickness using organic molecule perchloric acid imidazoles ferroelectric thin film made from aqua-solution method is generally
200nm can not be unfolded to study using the thickness of perchlorate molecular ferroelectric film made from solution infusion method up to 1.0um
The property of the organic molecule ferroelectric thin film of the thin several molecular layers thicks of the limit.In the heuristic process to ferroelectric thin film, to answer
Requirement to thin-film ferroelectric element, especially when film thickness is reduced to the thin several molecular layers of the limit, ferroelectric size effect
It should be one most important without insignificant research, and not to be able to satisfy research ferroelectric for the film thickness of above-mentioned 200nm and 1um
The requirement of dimensional effect, therefore, the high-quality ultra-thin organic molecule ferroelectric thin film that preparation is as thin as molecular level thickness are very necessary.
Based on this, inventor makes initiative research in ultra-thin stratiform ferroelectricity field, forms the technology of the present invention.
Summary of the invention
Goal of the invention: existing molecular ferroelectric film preparation method there are aiming at the problem that, the present invention provides a kind of ultra-thin
High quality, the ultra-thin stratiform perchloric acid imidazoles ferroelectricity of high-cleanness, high has been made in the preparation method of stratiform organic molecule ferroelectric thin film
Film；In addition, the present invention also provides a kind of applications of ferroelectric thin film obtained by this method.
Technical solution: the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film of the present invention includes the following steps:
1) the two-dimensional layer material of graphene or boron nitride is transferred to silicon chip surface, as substrate, and with perchloric acid miaow
Azoles powder is as growth source；
2) growth source and substrate are placed in the quartz ampoule of tube furnace, the two spacing distance is placed, and is vacuumized to quartz ampoule；
3) start tube furnace, temperature is 100~110 DEG C, keeps the temperature 1~2h at heating furnace body to growth source position, makes to grow
Source is volatilized by gas phase, and deposition forms ultra-thin stratiform perchloric acid imidazoles ferroelectric thin film on graphene or boron nitride.
By the temperature of control growth source position and the standoff distance of substrate and growth source, different-thickness can be obtained
Ferroelectric thin film.
Above-mentioned steps 1) in, the two-dimensional layer material of graphene or boron nitride can be by mechanically pulling off method or chemical vapor deposition
Area method is made.Mechanical stripping method or vapour deposition process prepare and can refer to existing method the step of shifting graphene/boron nitride.
Preferably, preparing graphene or boron nitride using mechanical stripping method and being transferred into the method on silicon wafer can wrap
Include following step: firstly, graphite flake or boron nitride crystal are orderly laid in the sticking one side of adhesive tape, it is anti-using blank adhesive tape
Multiple exfoliated graphite or boron nitride crystal lamella, are thinned the thickness of graphite flake or boron nitride crystal；After thering is thickness to be thinned tiling
Graphite flake or boron nitride crystal adhesive tape alignment silicon wafer fitting, then separate, single-layer graphene or nitridation are obtained on silicon wafer
Boron.
It can using the method that chemical vapour deposition technique generates graphene are as follows: the copper foil after polishing is put into tube furnace and taken out
Vacuum then passes to H2, Ar and CH4Gaseous mixture, the volume ratio of three is 1:2:1；Tube furnace is warming up to 1000~1100 DEG C
And maintain 1~2 hour, after cool down and take out copper foil, graphene is obtained on copper foil.It is generated using chemical vapour deposition technique
The method of boron nitride can are as follows: by the copper foil and growth source BH after polishing3NH3It puts different location in tube furnace into and vacuumizes, it will
BH3NH3Position is warming up to 90 DEG C~160 DEG C, and copper foil position is warming up to 1000 DEG C~1080 DEG C, is maintained 1~2 hour, after
Cool down and take out copper foil, boron nitride is obtained on copper foil.
Above-mentioned steps 2) in, growth source is preferably disposed at quartzy tube hub, and between substrate and growth source at a distance of 18~
21cm。
Preferably, in step 3), after starting tube furnace, furnace body temperature is first warming up to 90~100 DEG C in 10min, so
Be continuously heating to 100~110 DEG C in 5min afterwards, and at a temperature of maintain 1~2h, so that perchloric acid imidazoles sufficiently evaporated, deposited
Onto graphene or boron nitride；After heating, tube furnace is down to room temperature, terminates growth.
Before starting tube furnace, it preferably can first be passed through inert gas into quartz ampoule, completely cut off air or vapor etc. to growth
The pollution in source makes perchloric acid imidazoles in graphene or nitridation boron surface well-grown；Wherein, the flow of inert gas is preferably 15
~40sccm.
A kind of application of ultra-thin stratiform organic molecule ferroelectric thin film by above method preparation of the invention, is that this is ultra-thin
Stratiform perchloric acid imidazoles ferroelectric thin film is for constructing ferro-electric field effect transistor or ferroelectric memory.Ferroelectric memory such as ferroelectricity tunnel
Structure, memory is worn, including silicon wafer, silicon dioxide insulating layer, graphene layer and the perchloric acid imidazoles iron set gradually from bottom to top
Thin film layer, and perchloric acid imidazoles ferroelectric thin film layer is equipped with gold electrode.
The utility model has the advantages that compared with the prior art, the advantages of the present invention are as follows: (1) present invention by organic molecular film it
Between and organic molecule and substrate between faint Van der Waals for effect, by vapor deposition, controllable precise obtains molecule
The organic ferroelectric thin film of superthin layer high quality of grade thickness, thickness minimum can be monolayer (1.2nm), moreover, obtained pole
Limiting ultra-thin film still has very good ferroelectric property；(2) with traditional sputtering method, pulsed laser deposition, molecular beam
Epitaxy is compared, and the temperature that method of the invention prepares film is low, is not destroyed to material, reduces preparation cost, and process
Mode is easy；And compared to sol-gal process, chemical solution deposition, this method can avoid introducing impurity or other elements, material
Material list one, gained film degree of purity are high；(3) method of the invention, which can be made, maintains excellent ferroelectric superthin layer organic molecule iron
Conductive film is significantly thinned the thickness of film, and the size of prepared device can be effectively controlled, the application to integrated thin-film device
There is considerable effect, compared with the perchloric acid imidazoles material of thick-layer, the ferroelectricity minimum turnover voltage of ultra-thin layer film has
There is more fractional value, piezoelectric property is sensitiveer, can obtain extensively in devices fields such as ferro-electric field effect transistor, ferroelectric memorys
General application.
Detailed description of the invention
Fig. 1 (a) is the microscope photo being transferred on silicon wafer as the graphene of substrate in embodiment 1, and Fig. 1 (b) is
Surface obtained growth has the microscope photo of the graphene sample of ultra-thin stratiform organic molecule ferroelectric thin film in embodiment 1；
Fig. 2 is the placement schematic of growth source and substrate in the quartz ampoule of tube furnace；
Fig. 3 is the growth course schematic diagram of ultra-thin stratiform organic molecule ferroelectric thin film in tube furnace；
Fig. 4 (a) is the atomic force microscope test chart for the ultra-thin stratiform organic molecule ferroelectric thin film that embodiment 1 obtains, Fig. 4
It (b) is the measurement of step height in Fig. 4 (a), it was demonstrated that every layer film is with a thickness of 1.2nm；
Fig. 5 is the bilayer obtained in embodiment 2, the atomic force microscope test chart of three layers of ultra-thin ferroelectric multilayer thin films；
Fig. 6 (a) and Fig. 6 (b) is respectively that phase-voltage electric hysteresis of the ultra-thin ferroelectric multilayer thin films obtained in embodiment 2 returns
Line and amplitude-voltage butterfly loop line；
Fig. 7 is the device architecture schematic diagram of the ferroelectricity tunnelling memory prepared in embodiment 3.
Specific embodiment
Technical solution of the present invention is described further with reference to the accompanying drawing.
A kind of preparation method of ultra-thin stratiform organic molecule ferroelectric thin film of the invention, efficiently use organic molecule between,
Van der Waals for effect between organic molecule and substrate is successfully realized molecular level thickness ultrathin layer by vapor deposition
The preparation of shape ferroelectric thin film, concurrent ferroelectric thin film now still have excellent ferroelectricity at single layer (with a thickness of 1.2nm)
Matter can be applied to the electronic components such as ferro-electric field effect transistor, ferroelectric memory.
The preparation method specifically include the following steps:
Step 1, the two-dimensional layer material of graphene or boron nitride is transferred to silicon chip surface, as substrate, and with high chlorine
Imidazole acid powder is as growth source；
Using chemical vapour deposition technique in the prior art or mechanical stripping method, graphene, boron nitride etc. two is prepared
Stratified material is tieed up, and the two-dimensional layers material such as graphene is transferred on silicon wafer；Silicon wafer placement can aoxidize in air,
Its surface forms silicon dioxide layer, and when experiment can directly buy the silicon wafer that there is silicon dioxide layer on surface.
Specifically, being prepared using mechanical stripping method and shifting the process on graphene/boron nitride to silicon wafer are as follows:
Graphite flake or boron nitride crystal particle orderly 1-1) are laid in the sticking one side of adhesive tape, prepare another blank
Adhesive tape, by it, respectively sticking one side is opposite, comes into full contact with fitting, is kept for one minute or so, is then separated, continue to employ one
Start graphite flake/boron nitride adhesive tape that tiled, thus graphite flake/boron nitride thickness is effectively thinned；
1-2) using the graphite flake/boron nitride adhesive tape continued to employ in step 1-1), repetition step 1-1) three to four times, to graphite
Piece/boron nitride thickness is further thinned；
1-3) the adhesive tape that will continue to employ in step 1-2), alignment has the silicon wafer of silicon dioxide layer and fitting, adhesive tape have graphite
Piece/boron nitride one side is in contact with silicon dioxide layer, is kept for one minute or so, is then separated, stone is obtained on silicon wafer
Black alkene/boron nitride.
The method that graphene is generated using chemical vapour deposition technique specifically: put the copper foil after polishing in tube furnace simultaneously into
It vacuumizes, then passes to H2, Ar and CH4Gaseous mixture, the volume ratio of three is 1:2:1；Tube furnace is warming up to 1000~1100
DEG C and maintain 1~2 hour, after cool down and take out copper foil, graphene is obtained on copper foil.
The method that boron nitride is generated using chemical vapour deposition technique specifically: by the copper foil and growth source BH after polishing3NH3
It puts different location in tube furnace into and vacuumizes, by BH3NH3Position is warming up to 90 DEG C~160 DEG C, and copper foil position is warming up to
1000 DEG C~1080 DEG C, maintain 1~2 hour, after cool down and take out copper foil, boron nitride is obtained on copper foil.
It, generally can be by following step by graphene or nitrogen after generating graphene or boron nitride using chemical vapour deposition technique
Change boron and be transferred to silicon chip surface: being coated with PMMA on the copper foil for growing graphene or boron nitride, and be cut into small pieces, pasted
Onto adhesive tape；Put adhesive tape into FeCl3In/HCl mixed solution, copper foil is etched；It is washed after terminating etching, H2O2/ HCl is mixed
Close solution pickling, washed again, after on adhesive tape gluing to silicon wafer, heating, drying；Adhesive tape is removed, will be covered with stone
The silicon wafer of black alkene or boron nitride is successively put into acetone, impregnates in acetic acid, finally in H2With 300 DEG C~350 DEG C in/Ar atmosphere
Annealing 30 minutes~1 hour.
Step 3, start tube furnace, temperature is 100~110 DEG C, keeps the temperature 1~2h at heating furnace body to growth source position, is made
Growth source is volatilized by gas phase, and deposition forms ultra-thin stratiform perchloric acid imidazoles ferroelectric thin film on graphene or boron nitride.
Embodiment 1
1) graphene two-dimensional layer material is prepared using mechanical stripping method, and graphene two-dimensional layer material is transferred to silicon
On piece；Using the silicon wafer with 275nm silicon dioxide layer purchased from Suzhou Yan Cai micro-nano Science and Technology Ltd. in the present embodiment.
The graphene being transferred on silicon wafer is observed under an optical microscope, amplifies 1000 times of photo such as under microscope
Shown in Fig. 1 (a).
2) perchloric acid imidazoles granular crystals grind into powder is contained as growth source with quartz boat using agate mortar
Long source is freeed, and quartz boat is put into tube furnace center；Quartz boat is purchased from Nanjing Di Shiying Co., Ltd.
3) silicon wafer for shifting graphene is placed on another quartz boat, and this quartz boat is put into quartz ampoule, with
Hold the quartz boat of growth source perchloric acid imidazoles powder at a distance of 19cm, as shown in Figure 2；After placement, by quartz ampoule install to
Tube furnace corresponding position, and vacuumize；
4) Ar gas, flow 15sccm are passed through.Tube furnace is started, is warming up to 100 DEG C within furnace body temperature 10 minutes, then
It is warming up to 110 DEG C within 5 minutes, is maintained 2 hours at 110 DEG C, as shown in figure 3, perchloric acid imidazoles growth source is sufficiently evaporated, and deposited to
On graphene or boron nitride；After heating, tube furnace is naturally cooling to room temperature, terminates growth.
Fig. 1 (b) is the microscope photo for growing the graphene substrate of ultra-thin stratiform organic molecule ferroelectric thin film, with Fig. 1
(a) it compares as can be seen that growing attached another layer film, exactly ultra-thin stratiform organic molecule ferroelectricity on the sample after film
Film.
The ultra-thin stratiform organic molecule ferroelectric thin film of growth gained is characterized, wherein Fig. 4 (a) is aobvious using atomic force
Micro mirror carries out solid morphology characterization to the ultra-thin stratiform organic molecule ferroelectric thin film being grown on graphene, it can be seen that graphite
Plural layers are obtained on alkene, measurement discovery, the roughness of film is high organic point of ultra-thin stratiform of flatness in pm magnitude
Sub- ferroelectric thin film.By AFM testing film step height, determine that every layer film height is about 1.2nm, such as Fig. 4 (b).
Referring to the method for embodiment 1, substrate and growth source are prepared, and holds substrate and growth source with quartz boat respectively, and
The quartz boat for holding growth source is put into tube furnace center, the quartz boat for holding substrate is put into quartz ampoule together, with growth
Source is at a distance of 21cm；Quartz ampoule is installed to tube furnace corresponding position, and is vacuumized；
It is passed through Ar gas, flow 40sccm starts tube furnace, it is warming up to 93 DEG C within furnace body temperature 10 minutes, then 5 points
Clock is warming up to 103 DEG C, maintains 1 hour at 103 DEG C, evaporates perchloric acid imidazoles growth source sufficiently, and deposit on graphene.Add
After heat, tube furnace is naturally cooling to room temperature, terminates growth.
The ultra-thin stratiform organic molecule ferroelectric thin film of growth gained is characterized, 2~3 layers of different layers of films are obtained,
Such as Fig. 5.
The test of ferroelectric property is carried out to the ultra-thin stratiform organic molecule ferroelectric thin film of gained, is found in the thin of molecular level thickness
In film, still there is very good ferroelectricity, Fig. 6 (a) and 6 (b) is ultra-thin to gained using atomic force microscope piezo electric module
The ferroelectric hysteresis loop that stratiform organic molecule ferroelectric thin film is tested is phase-voltage curve and amplitude-voltage curve respectively；?
In phase-voltage curve, before and after test macro is to the test of sample making alive, the phase of ultra-thin ferroelectric multilayer thin films is had occurred
180 ° of polarization overturning, rollover effect are thorough, it was demonstrated that gained film is very sensitive to voltage, and polarization performance is strong；In amplitude-voltage
It in curve, can be calculated, to the ultra-thin stratiform Organic Iron conductive film, Minimum Polarization turnover voltage is in 3.5V or so.This is turned over
It is very small to turn voltage, it was demonstrated that obtained ferroelectric thin film is easy polarization.From the above-mentioned ferroelectricity to ultra-thin stratiform Organic Iron conductive film
Matter test characterization suppresses electric polarizability as can be seen that ferroelectric thin film obtained has, and polarizing voltage is smaller, shows very
Excellent ferroelectric property.
Embodiment 3
It uses the ultra-thin stratiform organic molecule ferroelectric thin film grown on graphene as semiconductor material, constructs ferroelectricity tunnel junctions
Memory.
The substrate of ferroelectricity tunnelling memory is the silicon wafer of the silica containing 275nm, and wherein silicon is heavily doped P-type silicon.Using
Obtained in embodiment 2 on graphene the double-deck perchloric acid imidazoles organic superthin layer film of vapor phase epitaxial growth as semiconductor
Material.
The parallel Electronic Speculum support grid of 200 mesh purchased from Beijing Zhong Jing tech company is used to sink on clean silicon wafer as mask plate
The gold of product about 100nm thickness obtains about 80 μm of wide ribbon gold electrodes after removing mask plate.Using purchased from mirror tech in Beijing
Gold electrode is divided into about 250 μm long by the probe of company, and gold electrode is transferred to the upper surface of double-deck perchloric acid imidazoles film, shape
At a ferroelectricity tunnelling structure, memory, such as Fig. 7.The test that ferroelectric property is carried out to the ferroelectricity tunnelling structure, memory, finds its guarantor
The excellent ferroelectricity of perchloric acid imidazoles ferroelectric thin film made from embodiment 2 is stayed.
Claims (10)
1. a kind of preparation method of ultra-thin stratiform organic molecule ferroelectric thin film, which comprises the steps of:
1) the two-dimensional layer material of graphene or boron nitride is transferred to silicon chip surface, as substrate, and with perchloric acid imidazoles powder
End is used as growth source；
2) growth source and substrate are placed in the quartz ampoule of tube furnace, the two spacing distance is placed, and is vacuumized to quartz ampoule；
3) start tube furnace, temperature is 100~110 DEG C, keeps the temperature 1~2h at heating furnace body to growth source position, keeps growth source logical
Gas phase volatilization is crossed, deposition forms ultra-thin stratiform perchloric acid imidazoles ferroelectric thin film on graphene or boron nitride.
2. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 1, which is characterized in that step 1)
In, the two-dimensional layer material of the graphene or boron nitride is by mechanically pulling off method or chemical vapour deposition technique is made.
3. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 2, which is characterized in that the machine
Tool stripping method prepares graphene or boron nitride and is transferred into the method on silicon wafer are as follows: firstly, graphite flake or boron nitride is brilliant
Body is orderly laid in the sticking one side of adhesive tape, using blank adhesive tape exfoliated graphite or boron nitride crystal lamella repeatedly, is thinned
The thickness of graphite flake or boron nitride crystal；The adhesive tape of graphite flake or boron nitride crystal after having thickness to be thinned tiling is directed at silicon wafer
Then fitting separates, single-layer graphene or boron nitride is obtained on silicon wafer.
4. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 2, which is characterized in that describedization
Learn the method that vapour deposition process generates graphene are as follows: the copper foil after polishing is put into tube furnace and vacuumized, H is then passed to2、
Ar and CH4Gaseous mixture, the volume ratio of three is 1:2:1；Tube furnace is warming up to 1000~1100 DEG C and is maintained 1~2 hour,
After cool down and take out copper foil, graphene is obtained on copper foil.
5. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 2, which is characterized in that describedization
Learn the method that vapour deposition process generates boron nitride are as follows: by the copper foil and growth source BH after polishing3NH3Put different positions in tube furnace into
It sets and vacuumizes, by BH3NH3Position is warming up to 90 DEG C~160 DEG C, and copper foil position is warming up to 1000 DEG C~1080 DEG C, maintains 1
~2 hours, after cool down and take out copper foil, boron nitride is obtained on copper foil.
6. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 1, which is characterized in that step 2)
In, the growth source is placed at quartzy tube hub, at a distance of 18~21cm between the substrate and growth source.
7. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 1, which is characterized in that step 3)
In, after starting tube furnace, furnace body temperature is first warming up to 90~100 DEG C in 10min, is then continuously heating in 5min
100~110 DEG C, 1~2h of heat preservation, make perchloric acid imidazoles sufficiently evaporate, deposit on graphene or boron nitride；After heating,
Tube furnace is down to room temperature, terminates growth.
8. the preparation method of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 1, which is characterized in that step 3)
In, before starting tube furnace, inert gas is first passed through into quartz ampoule, the flow of inert gas is 15~40sccm.
9. a kind of application of the ultra-thin stratiform organic molecule ferroelectric thin film by the preparation of claim 1 the method, which is characterized in that
The ultra-thin stratiform perchloric acid imidazoles ferroelectric thin film is used to construct ferro-electric field effect transistor or ferroelectric memory.
10. the application of ultra-thin stratiform organic molecule ferroelectric thin film according to claim 9, which is characterized in that the ferroelectricity
Memory is ferroelectricity tunnelling structure, memory comprising silicon wafer, silicon dioxide insulating layer, the graphene layer set gradually from bottom to top
And perchloric acid imidazoles ferroelectric thin film layer, the perchloric acid imidazoles ferroelectric thin film layer are equipped with gold electrode.
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| CN1046356A (en) * | 1990-03-22 | 1990-10-24 | 四川大学 | The preparation method of film of multicomponent metal oxide |
| CN101988184A (en) * | 2009-08-06 | 2011-03-23 | 北京大学 | Method for preparing grapheme film |
| CN103740327A (en) * | 2013-12-10 | 2014-04-23 | 南京理工大学 | Molecular ferroelectric film and method of solution soaking growth thereof |
| CN104979038A (en) * | 2015-06-08 | 2015-10-14 | 北京大学 | Topological insulator/graphene compound flexible transparent conductive thin film and preparation method and application thereof |
| WO2017110953A1 (en) * | 2015-12-24 | 2017-06-29 | 株式会社Flosfia | Film forming method |
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| CN1046356A (en) * | 1990-03-22 | 1990-10-24 | 四川大学 | The preparation method of film of multicomponent metal oxide |
| CN101988184A (en) * | 2009-08-06 | 2011-03-23 | 北京大学 | Method for preparing grapheme film |
| CN103740327A (en) * | 2013-12-10 | 2014-04-23 | 南京理工大学 | Molecular ferroelectric film and method of solution soaking growth thereof |
| CN104979038A (en) * | 2015-06-08 | 2015-10-14 | 北京大学 | Topological insulator/graphene compound flexible transparent conductive thin film and preparation method and application thereof |
| WO2017110953A1 (en) * | 2015-12-24 | 2017-06-29 | 株式会社Flosfia | Film forming method |
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