CN116791051A - Sputtering method of isolation layer - Google Patents
Sputtering method of isolation layer Download PDFInfo
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- CN116791051A CN116791051A CN202210422862.8A CN202210422862A CN116791051A CN 116791051 A CN116791051 A CN 116791051A CN 202210422862 A CN202210422862 A CN 202210422862A CN 116791051 A CN116791051 A CN 116791051A
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 148
- 238000002955 isolation Methods 0.000 title claims abstract description 22
- 230000007246 mechanism Effects 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000011261 inert gas Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 7
- 230000008859 change Effects 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims description 22
- 239000000110 cooling liquid Substances 0.000 claims description 22
- 238000003825 pressing Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000009423 ventilation Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
The application discloses an isolation layer sputtering method, which comprises the following steps: opening the upper box door, placing the base material on the base material mounting mechanism of the sputtering device, starting the vacuumizing device, vacuumizing the sputtering chamber, opening the electromagnetic valve, allowing inert gas to enter the sputtering chamber through the inert gas storage tank, the conveying pipe and the spray head, driving the driving wheel to rotate by the driving shaft, driving the driven wheel to rotate by the driving belt, the reciprocating screw rod is driven to rotate, the movable block reciprocates along the reciprocating screw rod, the sliding rod reciprocates along the sliding hole, the support and the magnet are driven to reciprocate, the magnet is utilized to change the magnetic field environment in the sputtering chamber, the plasma diffusion range is wider, and the plasma bombards atoms of the target material and deposits the atoms on the surface of the substrate.
Description
Technical Field
The application relates to the technical field of sputtering, in particular to an isolation layer sputtering method.
Background
Sputtering is to introduce proper inert gas as medium in vacuum environment to make the atoms on the surface of target impacted by the inert gas and form film on the surface, and to bombard the surface with charged particles with kinetic energy of tens of electron volts or higher to make the particles sputtered into gas phase for etching and film plating. The number of atoms sputtered by an ion is called the sputtering Yield (Yield) and the higher the sputtering speed, the highest is Cu, au, ag, etc., and the lowest is Ti, mo, ta, W, etc. Typically 0.1 to 10 atoms/ion. Ions can be generated by direct current glow discharge, discharge is generated by high voltage between the two electrodes, and positive ions bombard a negative target material to sputter the target material, so that the target material is plated on a plated object.
The Chinese patent discloses a high-efficiency sputtering device (issued publication No. CN 208440690U), which can solve the problem that the sputtering space of the existing sputtering device is not adjustable, but the sputtering device can generate larger heat during working and can not effectively dissipate heat, the magnetic field environment in the sputtering chamber is narrow, so that the plasma diffusion range is narrow, and the sputtering quality is poor. Accordingly, one skilled in the art provides an isolation layer sputtering method to solve the above-mentioned problems.
Disclosure of Invention
In order to solve the technical problems, the application provides an isolation layer sputtering method, which comprises the following steps:
step one: opening the upper box door, placing a substrate on a substrate mounting mechanism of the sputtering device, starting a vacuumizing device, vacuumizing the sputtering chamber, opening an electromagnetic valve, and allowing inert gas to enter the sputtering chamber through an inert gas storage tank, a conveying pipe and a nozzle;
step two: the cooling liquid in the liquid storage tank is pumped by the circulating pump, enters the cavity of the sputtering structure from the circulating pipeline to cool the sputtering structure, enters the condenser from the circulating pipeline to cool the sputtering structure, and enters the liquid storage tank to form a circulating cooling system to cool the sputtering structure, so that the cooling efficiency is improved;
step three: the lengthening bolt is fixed with the shell, so that the pressing plate fixes the target, and the design of the pressing structure is convenient for the installation and replacement of the target;
the clamping plate is pulled upwards and rotated, so that the clamping plate is tightly attached to the upper end face of the base material, the base material is tightly pressed, the base material is convenient to fix, the supporting strips are arranged into a U shape, inert gas is convenient to flow, and therefore sputtering quality of the bottom face of the base material is improved;
step four: the starting motor drives the driving shaft to rotate, drives the substrate mounting mechanism and the substrate to rotate, enables the substrate to fully contact inert gas, improves sputtering efficiency of the substrate, drives the driving wheel to rotate, drives the driven wheel to rotate by the driving belt, drives the reciprocating screw rod to rotate, enables the movable block to reciprocate along the reciprocating screw rod, enables the sliding rod to reciprocate along the sliding hole, drives the support and the magnet to reciprocate, and utilizes the magnet to change the magnetic field environment inside the sputtering bin, so that the plasma diffusion range is wider, and atoms of the target are bombarded out by the plasma and deposited on the surface of the substrate.
Preferably, the sputtering device comprises a lower box body and an upper box body, wherein the front end of the lower box body is provided with a lower box door, an exhaust pipe is arranged on the box wall of the lower box body and connected with a vacuumizing device, the vacuumizing device is connected with an air inlet pipe, the air inlet pipe penetrates through a partition plate, the partition plate is positioned at the joint of the lower box body and the upper box body, one side of the lower box body, which is positioned on the vacuumizing device, is provided with a circulating cooling mechanism, the inside of the upper box body is provided with a sputtering cabin for vacuumizing, the substrate is sputtered, the top of the upper box body is provided with an inert gas storage tank, the inert gas storage tank is connected with a conveying pipe, an electromagnetic valve is arranged on the conveying pipe, the conveying pipe penetrates through the upper box body, a sealing insulation liner is arranged at the joint of the upper box body and the conveying pipe, one end of the conveying pipe, which is positioned inside the sputtering cabin, is connected with a sputtering mechanism, the inner wall at the top end of the upper box body is provided with a substrate installation mechanism, and the substrate installation mechanism is arranged below the sputtering mechanism is connected with a magnetic field interference mechanism.
Preferably: the box wall at one side of the lower box body is provided with a plurality of ventilation holes, and the box wall at the other side of the lower box body is provided with a heat dissipation fan.
Preferably: the circulating cooling mechanism comprises a condenser, one end of the condenser is connected with the sputtering mechanism through a circulating pipeline, a cavity for cooling liquid to circulate is formed in the sputtering mechanism, the circulating pipeline penetrates through the partition plate, a sealing insulating liner is arranged at the joint of the partition plate and the circulating pipeline, the other end of the condenser is connected with the liquid storage tank, the liquid storage tank is connected with the circulating pump through the circulating pipeline, and the circulating pump is connected with the sputtering mechanism through the circulating pipeline.
Preferably: the sputtering mechanism comprises a shell, a cavity for cooling liquid circulation is formed in the shell, a target is mounted at the lower end of the shell through a pressing structure, three through holes are formed in the bottom end of the shell, a positive electrode is arranged in the through hole in the middle of the shell, and a negative electrode is arranged in the two through holes on two sides of the shell.
Preferably: the compressing structure comprises a pressing plate, a through extension bolt is installed on the pressing plate, and a threaded hole is formed in the shell corresponding to the extension bolt.
Preferably: the substrate installation mechanism comprises a supporting plate, wherein a plurality of supporting bars are arranged on the upper end face of the supporting plate, and the supporting bars are arranged in a U shape.
Preferably: the four corners department of backup pad installs the movable rod that runs through and sliding connection, and movable rod upper end fixed connection splint, movable rod are located backup pad below department cover spring, and the substrate is placed on the support bar in the backup pad.
Preferably: the magnetic field interference mechanism comprises a driving shaft fixedly connected with the supporting plate, the driving shaft is rotationally connected with the sputtering chamber through a sealing bearing, one end of the driving shaft, which is positioned outside the sputtering chamber, is connected with a motor, and the motor is fixedly connected with the upper box body through a motor bracket.
Preferably: the driving shaft is fixedly connected with the driving wheel, the driving wheel is located at the outer side of the sputtering chamber and connected with the driven wheel through the driving belt, the driven wheel is connected with the reciprocating screw rod, the reciprocating screw rod is rotationally connected with the sputtering chamber through the bearing, the reciprocating screw rod is located at the inner part of the sputtering chamber and connected with the movable block, the outer side of the reciprocating screw rod is provided with the screw rod shell, the screw rod shell is fixedly connected with the bottom end of the sputtering chamber, the length of the screw rod shell is smaller than that of the sputtering chamber, the two ends of the movable block are fixedly connected with the sliding rods, sliding holes are formed in the two sides of the screw rod shell corresponding to the sliding rods, the tail ends of the sliding rods are fixedly connected with the support, and the magnet is mounted on the support.
The application has the technical effects and advantages that:
1. in the application, the vacuumizing device is started to vacuumize the sputtering chamber, the electromagnetic valve is opened, inert gas enters the sputtering chamber through the inert gas storage tank, the conveying pipe and the spray head, the sputtering chamber is filled with the inert gas, the inert gas is accelerated to strike the target on the sputtering mechanism under the action of the sputtering mechanism and the magnetic field interference mechanism, atoms on the surface of the target are struck out, a coating film is formed on the surface of a substrate, and the magnet in the magnetic field interference mechanism moves, so that the magnetic field distribution is more uniform, and the thickness of the coating film is more uniform.
2. In the application, the cooling liquid in the liquid storage tank is pumped by the circulating pump, enters the cavity of the sputtering structure from the circulating pipeline to cool the sputtering structure, and enters the condenser from the circulating pipeline to cool the cooling liquid to enter the liquid storage tank to form a circulating cooling system to cool the sputtering structure, thereby improving the cooling efficiency.
3. According to the application, the target is fixed by the pressing plate through the lengthened bolt and the shell, and the target is convenient to install and replace due to the design of the pressing structure.
4. In the application, the substrate is pressed by the substrate mounting mechanism, so that the substrate is convenient to fix, and the support bar is arranged in a U shape, so that inert gas can flow conveniently, and the sputtering quality of the bottom surface of the substrate is improved.
5. In the application, the starting motor drives the driving shaft to rotate and drives the substrate mounting mechanism and the substrate to rotate, so that the substrate fully contacts with inert gas, and the sputtering efficiency of the substrate is improved.
6. In the application, the driving shaft drives the driving wheel to rotate, the driving belt drives the driven wheel to rotate, the reciprocating screw rod is driven to rotate, the movable block reciprocates along the reciprocating screw rod, the sliding rod reciprocates along the sliding hole, the bracket and the magnet are driven to reciprocate, the magnet is utilized to change the magnetic field environment in the sputtering chamber, so that the diffusion range of the plasma is wider, and atoms of the target are bombed out by the plasma and deposited on the surface of the substrate.
Drawings
FIG. 1 is a schematic diagram of a sputtering method for forming an isolation layer according to an embodiment of the present application;
FIG. 2 is a schematic diagram of the internal structures of the lower and upper cases in the sputtering method for the isolation layer according to the embodiment of the present application;
FIG. 3 is a schematic diagram of a circulation cooling mechanism in a sputtering method for an isolation layer according to an embodiment of the present application;
FIG. 4 is a schematic view of a sputtering mechanism in a sputtering method for an isolation layer according to an embodiment of the present application;
FIG. 5 is a schematic view of a substrate mounting mechanism in a sputtering method for an isolation layer according to an embodiment of the present application;
FIG. 6 is a schematic diagram of a magnetic field disturbance mechanism in a sputtering method for an isolation layer according to an embodiment of the present application;
FIG. 7 is an enlarged schematic view of the structure A in FIG. 6 in the sputtering method of the isolation layer according to the embodiment of the present application;
in the figure: 1. lower box, 101, lower box door, 102, ventilation hole, 103, exhaust pipe, 104, heat radiation fan, 2, upper box, 201, upper box door, 3, inert gas storage tank, 4, delivery pipe, 5, solenoid valve, 6, shower head, 7, partition, 8, evacuating device, 801, intake pipe, 9, circulation cooling mechanism, 901, condenser, 902, liquid storage tank, 903, circulation pump, 904, circulation pipe, 10, sputtering bin, 11, sputtering mechanism, 111, casing, 112, target, 113, through hole, 114, positive electrode, 115, negative electrode, 116, platen, 117, extension bolt, 12, substrate mounting mechanism, 121, support plate, 122, support bar, 123, clamp plate, 124, movable bar, 125, spring, 13, magnetic field interference mechanism, 131, drive shaft, 132, motor, 133, motor support, 134, drive wheel, 135, drive belt, 136, driven wheel, 137, reciprocating screw, 138, movable block, 139, screw housing, 1310, slide hole 1311, slide bar, 1312, support, 3, magnet.
Detailed Description
The application will be described in further detail with reference to the drawings and the detailed description. The embodiments of the application have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the application in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, and to enable others of ordinary skill in the art to understand the application for various embodiments with various modifications as are suited to the particular use contemplated.
Example 1
Referring to fig. 1-2, in this embodiment, a sputtering method for an isolation layer is provided, which includes the following steps:
step one: opening an upper box door 201, placing a substrate on a substrate mounting mechanism 12 of a sputtering device, closing the upper box door 201, starting a vacuumizing device 8, vacuumizing the sputtering chamber 10, opening an electromagnetic valve 5, enabling inert gas to enter the sputtering chamber 10 through an inert gas storage tank 3, a conveying pipe 4 and a spray head 6, filling the inert gas into the sputtering chamber 10, enabling the inert gas to accelerate to strike a target 112 on the sputtering mechanism 11 under the action of the sputtering mechanism 11 and a magnetic field interference mechanism 13, striking atoms on the surface of the target 112, forming a coating film on the surface of the substrate, and enabling a magnet 1213 in the magnetic field interference mechanism 13 to move, so that the magnetic field distribution is more uniform, and the thickness of the coating film is more uniform;
step two: starting a circulating pump 903 to pump cooling liquid in a liquid storage tank 902, enabling the cooling liquid to enter a cavity of a sputtering structure 11 from a circulating pipeline 904 to cool the sputtering structure 11, enabling the cooling liquid to enter a condenser 901 from the circulating pipeline 904 to cool the cooling liquid, and enabling the cooling liquid to enter the liquid storage tank 902 to form a circulating cooling system to cool the sputtering structure 11, so that cooling efficiency is improved;
the target 112 is fixed by the pressing plate 116 through the lengthened bolts 117 and the shell 1, and the installation and replacement of the target 112 are facilitated due to the design of the pressing structure;
step three: the clamping plate 123 is pulled upwards and rotated, so that the clamping plate 123 is tightly attached to the upper end face of the base material, the base material is tightly pressed, the base material is convenient to fix, the supporting strips 122 are arranged into a U shape, the flow of inert gas is convenient, and the sputtering quality of the bottom face of the base material is improved;
step four: the starting motor 132 drives the driving shaft 131 to rotate, drives the substrate mounting mechanism 12 and the substrate to rotate, enables the substrate to fully contact inert gas, improves the sputtering efficiency of the substrate, drives the driving wheel 134 to rotate, drives the driven wheel 136 to rotate by the driving belt 135, drives the reciprocating screw 137 to rotate, enables the movable block 138 to reciprocate along the reciprocating screw 137, enables the sliding rod 1311 to reciprocate along the sliding hole 1310, drives the support 1312 and the magnet 1313 to reciprocate, and utilizes the magnet 1313 to change the magnetic field environment inside the sputtering chamber 10, so that the plasma diffusion range is wider, and atoms of the target are bombed out by the plasma and deposited on the surface of the substrate.
The sputtering device of the embodiment comprises a lower box body 1 and an upper box body 2, wherein a lower box door 101 is arranged at the front end of the lower box body 1, a plurality of air holes 102 are formed in one side box wall of the lower box body 1, a heat dissipation fan 104 is arranged on the other side box wall of the lower box body 1, an exhaust pipe 103 is arranged on the box wall of the lower box body 1, the exhaust pipe 103 is connected with a vacuumizing device 8, the vacuumizing device 8 is connected with an air inlet pipe 801, the air inlet pipe 801 penetrates through a partition plate 7, the partition plate 7 is positioned at the joint of the lower box body 1 and the upper box body 2, a circulating cooling mechanism 9 is arranged on one side of the vacuumizing device 8 of the lower box body 1, a sputtering chamber 10 is arranged in the upper box body 2 and used for vacuumizing a substrate, an inert gas storage tank 3 is arranged at the top of the upper box body 2, a conveying pipe 4 is connected with the inert gas storage tank 3, an electromagnetic valve 5 is arranged on the conveying pipe 4, the conveying pipe 4 penetrates through the upper box body 2, a sealing insulation liner is arranged at the joint of the upper box body 2, one end of the conveying pipe 4, which is positioned inside the chamber 10, a spray head 6 is connected, a mechanism 11 is arranged on the inner wall at the top end of the upper box body 2, a sputtering mechanism 11 is arranged below the sputtering chamber 11, a substrate mounting mechanism 12 is arranged, and a substrate magnetic field disturbing mechanism 12 is arranged on the substrate.
When the sputtering device is used, the upper box door 201 is opened, a substrate is placed on the substrate mounting mechanism 12, the upper box door 201 is closed, the vacuumizing device 8 is started, the sputtering chamber 10 is vacuumized, the electromagnetic valve 5 is opened, inert gas enters the sputtering chamber 10 through the inert gas storage tank 3, the conveying pipe 4 and the spray head 6, the sputtering chamber 10 is filled with the inert gas, the inert gas is accelerated to strike the target 112 on the sputtering mechanism 11 under the action of the sputtering mechanism 11 and the magnetic field interference mechanism 13, atoms on the surface of the target 112 are struck out, a coating film is formed on the surface of the substrate, and the magnet 1213 in the magnetic field interference mechanism 13 moves, so that the magnetic field distribution is more uniform, and the thickness of the coating film is more uniform.
Example 2
Referring to fig. 2 and 3, in this embodiment, the circulation cooling mechanism 9 includes a condenser 901, one end of the condenser 901 is connected to the sputtering mechanism 11 through a circulation pipeline 904, a cavity for cooling liquid to circulate is provided in the sputtering mechanism 11, the circulation pipeline 904 penetrates through the partition 7, a sealing insulation liner is provided at the connection between the partition 7 and the circulation pipeline 904, the other end of the condenser 901 is connected to the liquid storage tank 902, the liquid storage tank 902 is connected to the circulation pump 903 through the circulation pipeline 904, the circulation pump 903 is connected to the sputtering mechanism 11 through the circulation pipeline 904, the circulation pump 903 is started to pump cooling liquid in the liquid storage tank 902, the cooling liquid enters the cavity of the sputtering structure 11 from the circulation pipeline 904 to cool the sputtering mechanism 11, the cooling liquid enters the liquid storage tank 902 from the circulation pipeline 904 to form a circulation cooling system to cool the sputtering structure 11, and the cooling efficiency is improved.
Referring to fig. 2 and 4, in this embodiment, the sputtering mechanism 11 includes a housing 111, a cavity for cooling liquid to circulate is provided in the housing 111, a target 112 is mounted at the lower end of the housing 1 through a pressing structure, the pressing structure includes a pressing plate 116, a through extension bolt 117 is mounted on the pressing plate 116, a threaded hole is provided on the housing 1 corresponding to the extension bolt 117, the pressing plate 116 fixes the target 112 through the fixing of the extension bolt 117 to the housing 1, the design of the pressing structure is convenient for mounting and replacing the target 112, three through holes 113 are provided at the bottom end of the housing 1, a positive electrode 114 is built in the through hole 113 at the middle, a negative electrode 115 is built in the two through holes 113 at both sides,
referring to fig. 2 and 5, in the present embodiment, the substrate mounting mechanism 12 includes a support plate 121, the upper end surface of the support plate 121 is provided with a plurality of support bars 122, the support bars 122 are set to be U-shaped, four corners of the support plate 121 are provided with movable rods 124 penetrating through and slidingly connected, the upper ends of the movable rods 124 are fixedly connected with clamping plates 123, springs 125 are sleeved at the positions of the movable rods 124 below the support plate 121, the substrate is placed on the support bars 122 on the support plate 121, the clamping plates 123 are pulled upwards and rotated, the clamping plates 123 are tightly attached to the upper end surface of the substrate, thereby compacting the substrate, facilitating the fixation of the substrate, setting the support bars 122 to be U-shaped, facilitating the flow of inert gas, and improving the sputtering quality of the bottom surface of the substrate.
Referring to fig. 2, 5, 6 and 7, in this embodiment, the magnetic field interference mechanism 13 includes a driving shaft 131 fixedly connected with the supporting plate 121, the driving shaft 131 is rotatably connected with the sputtering chamber 10 through a sealed bearing, one end of the driving shaft 131 located at the outer side of the sputtering chamber 10 is connected with a motor 132, the motor 132 is fixedly connected with the upper box 2 through a motor bracket 133, the driving shaft 131 is fixedly connected with a driving wheel 134 located at the outer side of the sputtering chamber 10, the driving wheel 134 is connected with a driven wheel 136 through a driving belt 135, the driven wheel 136 is connected with a reciprocating screw 137, the reciprocating screw 137 is rotatably connected with the sputtering chamber 10 through a bearing, the reciprocating screw 137 is connected with a movable block 138 at the inner side of the sputtering chamber 10, a screw housing 139 is arranged at the outer side of the reciprocating screw 137, the screw housing 139 is fixedly connected with the bottom end of the sputtering chamber 10, the length of the screw housing 139 is smaller than the length of the sputtering chamber 10, the sliding rod 1311 is fixedly connected to two ends of the movable block 138, sliding holes 1310 are formed in two sides of the screw rod housing 139 corresponding to the sliding rod 1311, a support 1312 is fixedly connected to the tail end of the sliding rod 1311, a magnet 1313 is mounted on the support 1312, a starting motor 132 drives a driving shaft 131 to rotate to drive a substrate mounting mechanism 12 and a substrate to rotate, the substrate is fully contacted with inert gas, sputtering efficiency of the substrate is improved, the driving shaft 131 drives a driving wheel 134 to rotate, a driving belt 135 drives a driven wheel 136 to rotate to drive a reciprocating screw 137 to rotate, the movable block 138 reciprocates along the reciprocating screw 137, the sliding rod 1311 reciprocates along the sliding holes 1310 to drive the support 1312 and the magnet 1313 to reciprocate, the magnet 1313 is utilized to change the magnetic field environment inside the sputtering chamber 10, the plasma diffusion range is wider, and atoms of the target are bombarded out by the plasma and deposited on the surface of the substrate.
Example 3
Referring to fig. 1-7, in this embodiment, a method for sputtering an isolation layer is provided, which includes the following steps:
s1, opening an upper box door 201, placing a substrate on a substrate mounting mechanism 12, closing the upper box door 201, starting a vacuumizing device 8, vacuumizing the sputtering chamber 10, opening an electromagnetic valve 5, and allowing inert gas to enter the sputtering chamber 10 through an inert gas storage tank 3, a conveying pipe 4 and a spray head 6;
s2, starting a circulating cooling mechanism 9, and cooling a sputtering mechanism 11 by using cooling liquid;
s3, starting the magnetic field interference mechanism 13 to drive the substrate mounting mechanism 12 and the substrate to rotate, and changing the magnetic field environment inside the sputtering chamber 10 by the magnet 1313, so that the plasma diffusion range is wider.
It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art and which are included in the embodiments of the present application without the inventive step, are intended to be within the scope of the present application. Structures, devices and methods of operation not specifically described and illustrated herein, unless otherwise indicated and limited, are implemented according to conventional means in the art.
Claims (10)
1. A method of sputtering an isolation layer comprising the steps of:
step one: opening an upper box door (201), placing a substrate on a substrate mounting mechanism (12) of a sputtering device, starting a vacuumizing device (8), vacuumizing the sputtering chamber (10), opening an electromagnetic valve (5), and allowing inert gas to enter the sputtering chamber (10) through an inert gas storage tank (3), a conveying pipe (4) and a spray head (6);
step two: starting a circulating pump (903) to pump cooling liquid in a liquid storage tank (902), enabling the cooling liquid to enter a cavity of a sputtering structure (11) from a circulating pipeline (904), cooling the sputtering structure (11), enabling the cooling liquid to enter a condenser (901) from the circulating pipeline (904), and enabling the cooling liquid to enter the liquid storage tank (902) to form a circulating cooling system, cooling the sputtering structure (11), and improving cooling efficiency;
step three: the target (112) is fixed by the pressure plate (116) through the lengthened bolt (117) and the shell (1), and the design of the pressing structure is convenient for the installation and replacement of the target (112);
the clamping plate (123) is pulled upwards and rotated, so that the clamping plate (123) is tightly attached to the upper end face of the base material, the base material is tightly pressed, the base material is convenient to fix, the supporting strips (122) are arranged into a U shape, the flow of inert gas is convenient, and the sputtering quality of the bottom face of the base material is improved;
step four: the starting motor (132) drives the driving shaft (131) to rotate, drives the substrate mounting mechanism (12) and the substrate to rotate, enables the substrate to fully contact inert gas, improves sputtering efficiency of the substrate, drives the driving wheel (134) to rotate, drives the driven wheel (136) to rotate by the driving belt (135), drives the reciprocating screw rod (137) to rotate, drives the movable block (138) to reciprocate along the reciprocating screw rod (137), drives the support (1312) and the magnet (1313) to reciprocate along the sliding hole (1310), and utilizes the magnet (1313) to change the magnetic field environment inside the sputtering chamber (10), so that the plasma diffusion range is wider, and atoms of the target are bombarded out by the plasma and deposited on the surface of the substrate.
2. The method according to claim 1, wherein the first sputtering chamber (10) is filled with an inert gas, the inert gas is accelerated to strike the target (112) on the sputtering mechanism (11) under the action of the sputtering mechanism (11) and the magnetic field interference mechanism (13), atoms on the surface of the target (112) are struck out, a coating film is formed on the surface of the substrate, and the magnet (1213) in the magnetic field interference mechanism (13) moves, so that the magnetic field distribution is more uniform, and the thickness of the coating film is more uniform.
3. The method for sputtering the isolation layer according to claim 1, wherein the sputtering device comprises a lower box body (1) and an upper box body (2), a lower box door (101) is arranged at the front end of the lower box body (1), an exhaust pipe (103) is arranged on the box wall of the lower box body (1), the exhaust pipe (103) is connected with a vacuumizing device (8), the vacuumizing device (8) is connected with an air inlet pipe (801), the air inlet pipe (801) penetrates through a partition plate (7), the partition plate (7) is positioned at the joint of the lower box body (1) and the upper box body (2), a circulating cooling mechanism (9) is arranged at one side of the vacuumizing device (8) of the lower box body (1), a sputtering chamber (10) is arranged in the upper box body (2) and used for vacuumizing a base material, an inert gas storage tank (3) is arranged at the top of the upper box body (2), the inert gas storage tank (3) is connected with a conveying pipe (4), an electromagnetic valve (5) is arranged on the conveying pipe (4), the conveying pipe (4) penetrates through the upper box body (2), the upper box body (2) and the connecting part of the conveying pipe (4) is provided with an insulating liner (6), the inner wall (10) is arranged at one end of the sputtering chamber (10), a substrate mounting mechanism (12) is arranged below the sputtering mechanism (11), and the substrate mounting mechanism (12) is connected with a magnetic field interference mechanism (13); a plurality of ventilation holes (102) are formed in one side wall of the lower box body (1), and a heat dissipation fan (104) is arranged in the other side wall of the lower box body (1).
4. A sputtering method of an isolation layer according to claim 3, characterized in that the circulating cooling mechanism (9) comprises a condenser (901), one end of the condenser (901) is connected with the sputtering mechanism (11) through a circulating pipeline (904), a cavity for circulating cooling liquid is arranged in the sputtering mechanism (11), the circulating pipeline (904) penetrates through the partition board (7), a sealing insulation liner is arranged at the joint of the partition board (7) and the circulating pipeline (904), the other end of the condenser (901) is connected with a liquid storage tank (902), the liquid storage tank (902) is connected with a circulating pump (903) through the circulating pipeline (904), and the circulating pump (903) is connected with the sputtering mechanism (11) through the circulating pipeline (904).
5. A sputtering method of an isolation layer according to claim 3, wherein the sputtering mechanism (11) comprises a casing (111), a cavity for cooling liquid circulation is arranged in the casing (111), a target (112) is installed at the lower end of the casing (1) through a compression structure, three through holes (113) are arranged at the bottom end of the casing (1), a positive electrode (114) is arranged in the through hole (113) at the middle part, and a negative electrode (115) is arranged in two through holes (113) at two sides.
6. The sputtering method of the isolation layer according to claim 5, wherein the pressing structure comprises a pressing plate (116), the pressing plate (116) is provided with a through extension bolt (117), and the shell (1) is provided with a threaded hole corresponding to the extension bolt (117).
7. A sputtering method of an insulating layer according to claim 3, wherein the substrate mounting mechanism (12) comprises a support plate (121), a plurality of support bars (122) are provided on the upper end surface of the support plate (121), and the support bars (122) are provided in a U-shape.
8. The sputtering method of claim 7, wherein the four corners of the supporting plate (121) are provided with movable rods (124) which penetrate through and are connected in a sliding manner, the upper ends of the movable rods (124) are fixedly connected with clamping plates (123), springs (125) are sleeved on the movable rods (124) below the supporting plate (121), and the base material is placed on the supporting bars (122) on the supporting plate (121).
9. A method of sputtering an isolation layer according to claim 3, wherein the magnetic field disturbing means (13) comprises a driving shaft (131) fixedly connected with the supporting plate (121), the driving shaft (131) is rotatably connected with the sputtering chamber (10) through a sealed bearing, one end of the driving shaft (131) located outside the sputtering chamber (10) is connected with a motor (132), and the motor (132) is fixedly connected with the upper case (2) through a motor bracket (133).
10. The isolation layer sputtering method according to claim 9, wherein the driving shaft (131) is fixedly connected with the driving wheel (134), the driving wheel (134) is located at the outer side of the sputtering chamber (10), the driving wheel (134) is connected with the driven wheel (136) through a transmission belt (135), the driven wheel (136) is connected with the reciprocating screw rod (137), the reciprocating screw rod (137) is rotatably connected with the sputtering chamber (10) through a bearing, the reciprocating screw rod (137) is located at the inner portion of the sputtering chamber (10) and is connected with the movable block (138), the screw rod housing (139) is arranged at the outer side of the reciprocating screw rod (137), the screw rod housing (139) is fixedly connected with the bottom end of the sputtering chamber (10), the length of the screw rod housing (139) is smaller than the length of the sputtering chamber (10), sliding rods (1311) are fixedly connected at two ends of the movable block (138), sliding holes (1310) are formed in two sides of the screw rod housing (139) corresponding to the sliding rods (1311), the tail ends of the sliding rods (1311) are fixedly connected with the supports (1312), and magnets (1313) are arranged on the supports (1312).
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