CN216120217U - Buffer member for etching device and etching device - Google Patents

Buffer member for etching device and etching device Download PDF

Info

Publication number
CN216120217U
CN216120217U CN202121224576.8U CN202121224576U CN216120217U CN 216120217 U CN216120217 U CN 216120217U CN 202121224576 U CN202121224576 U CN 202121224576U CN 216120217 U CN216120217 U CN 216120217U
Authority
CN
China
Prior art keywords
cavity
valve
etching apparatus
wafer
buffer member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202121224576.8U
Other languages
Chinese (zh)
Inventor
王铖熠
郭颂
张霄
刘海洋
张怀东
张亦涛
胡冬冬
许开东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Luwen Semiconductor Technology Co ltd
Original Assignee
Beijing Luwen Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Luwen Semiconductor Technology Co ltd filed Critical Beijing Luwen Semiconductor Technology Co ltd
Priority to CN202121224576.8U priority Critical patent/CN216120217U/en
Application granted granted Critical
Publication of CN216120217U publication Critical patent/CN216120217U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The utility model discloses a buffer component for an etching device and the etching device, wherein the etching device comprises: the wafer vacuum forming device comprises a cavity, a vacuum pump and a wafer, wherein a cavity is defined in the cavity, a vacuum pumping pipeline communicated with the cavity is arranged on the cavity, the vacuum pumping pipeline is connected with the dry pump so that the vacuum environment is kept in the cavity, the vacuum pumping pipeline and the dry pump are both positioned outside the cavity, and the wafer is fixed in the cavity; the first valve body is arranged on the vacuum pumping pipeline, is positioned between the cavity and the dry pump and is used for controlling the on-off of the vacuum pumping pipeline; the buffer component is arranged on the vacuumizing pipeline and positioned between the cavity and the first valve body so as to reduce the instant suction acting force on the wafer during vacuumizing. According to the buffer component for the etching device, the buffer component is arranged on the evacuation pipeline, so that the phenomenon that the wafer in the cavity is broken due to the strong contrast action between the instant suction acting force and the fixed wafer acting force is avoided, and the waste of the production cost is prevented.

Description

Buffer member for etching device and etching device
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a buffer component for an etching device and the etching device.
Background
Plasma etching is one of the most common forms of dry etching, and when a gas is exposed to an electron region, an ionized gas, which passes through an accelerating electric field and releases a large amount of energy to etch a surface, and a gas having high-energy electrons are generated, thereby forming a plasma. In plasma etching, speed and uniformity are two extremely important parameters. For industrial production, the etching speed is high, the etching time is short, the production efficiency can be greatly improved, and the uniformity has great influence on the yield of products.
Under vacuum low pressure, radio frequency generated by an ICP radio frequency power supply is output to a toroidal coupling coil, mixed etching gas in a certain proportion generates high-density plasmas through coupled glow discharge, the plasmas bombard the surface of a substrate under the action of the RF radio frequency of a lower electrode, chemical bonds of semiconductor materials in a substrate pattern area are broken, volatile substances are generated with the etching gas, and the volatile substances are separated from the substrate in a gas form and are pumped away from a vacuum pipeline.
In semiconductor etching machine equipment, the wafer is placed on the electrode, in order to prevent that the wafer from producing the displacement in the course of the technology and leading to upper and lower electrode switch-on, thereby the phenomenon of striking sparks appears, cause wafer defective rate and equipment fault rate to rise, and then influence normal production, so do the protection with high temperature resistant insulating material's clamping ring around the electrode, the clamping ring is fixed the back with the wafer completely, the wafer can receive corresponding pressure, can produce the effort in the twinkling of an eye when the vacuum pump starts, this effort is opposite with the pressure direction of clamping ring and is greater than the surface stress of wafer, so will appear the broken phenomenon of wafer, also be exactly the piece. The occurrence of the phenomenon can seriously affect the production and cause the waste of cost, so the solution is urgently needed.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to solving at least one of the problems of the prior art.
To this end, the utility model provides a buffer component for an etching device, and the utility model also provides the etching device with the buffer component for the etching device.
According to a first aspect of the present invention, a buffer member for an etching apparatus, the etching apparatus comprising: the wafer vacuum forming device comprises a cavity, a vacuum pump and a wafer, wherein a cavity is defined in the cavity, a vacuum pumping pipeline communicated with the cavity is arranged on the cavity, the vacuum pumping pipeline is connected with the dry pump so that the vacuum environment is kept in the cavity, the vacuum pumping pipeline and the dry pump are both positioned outside the cavity, and the wafer is fixed in the cavity; the first valve body is arranged on the vacuumizing pipeline, is positioned between the cavity and the dry pump and is used for controlling the on-off of the vacuumizing pipeline; the buffer component is arranged on the vacuumizing pipeline and positioned between the cavity and the first valve body so as to reduce the instant suction acting force on the wafer during vacuumizing.
According to the buffer component for the etching device, the buffer component is arranged on the evacuation pipeline, so that when the dry pump is started, the buffer component can slow down the instant suction acting force on the wafer in the cavity, the phenomenon that the wafer in the cavity is broken due to the strong contrast action between the instant suction acting force and the fixed wafer acting force is avoided, and the waste of the production cost is prevented.
According to one embodiment of the present invention, the buffer member includes: the central support is fixedly arranged on the vacuum pumping pipeline, and a cross beam is arranged in the central support; the sealing ring is sleeved on the periphery of the central support; the valve plate is rotatably connected to the cross beam, and the valve plate can be driven to switch between an opening position and a closing position by the suction action of the dry pump; the elastic piece is connected between the valve plate and the cross beam, the elastic piece is in a natural state when the valve plate is in the closing position, and the elastic piece is in a compression state when the valve plate is in the opening position.
According to an optional example of the utility model, the cross beam comprises one cross beam, the valve plate comprises a first valve plate, the first valve plate is rotatably connected to one side of the cross beam, and the elastic element is arranged between the first valve plate and the cross beam.
Furthermore, the other side of the cross beam is provided with a sealing sheet, and the sealing sheet is respectively fixedly connected with the cross beam and the inner peripheral wall of the central support and seals the opening on the other side.
Furthermore, the valve plate further comprises a second valve plate, the second valve plate is rotatably connected to the other side of the cross beam, and the elastic piece is arranged between the second valve plate and the cross beam.
According to an optional example of the utility model, the cross beam comprises a plurality of cross beams, the valve plates comprise a plurality of cross beams, each valve plate is rotatably connected to the corresponding cross beam, and the elastic piece is arranged between each valve plate and the corresponding cross beam.
According to the optional embodiment of the utility model, the thickness of the valve plate is t, wherein t is more than or equal to 1mm and less than or equal to 3 mm.
According to another embodiment of the utility model, the valve plate is formed as a stainless steel sheet.
According to another embodiment of the utility model, the angle between the open position and the closed position of the valve plate is α, wherein α is greater than or equal to 0 ° and less than or equal to 60 °.
According to an etching apparatus of a second aspect of the present invention, there is provided the buffer member for an etching apparatus as described in any one of the first aspects. The etching device and the buffering component used for the etching device have the same advantages compared with the prior art, and are not described in detail herein.
Additional aspects and advantages of the utility model will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the utility model.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic partial structural view of an etching apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an electrode structure of an etching apparatus according to an embodiment of the present invention;
FIG. 3 is a circuit layout diagram of a chamber and various pipes of an etching apparatus according to an embodiment of the present invention;
FIG. 4 is a partial schematic structural view of a cushioning member according to an embodiment of the present invention;
FIG. 5 is a schematic view of a valve plate of a cushion member according to an embodiment of the present invention in an open position;
FIG. 6 is a process flow diagram illustrating the detailed operation of an embodiment of the present invention.
Reference numerals:
the device comprises a cavity 1, a wafer 12, a base 11, a ceramic seat 10, a shielding ring 9, an insulating ring 8, a ceramic pressure ring 7, a limiting ring 5, a polytetrafluoroethylene sleeve 2, an electrode 6, a top plate 13, a bottom plate 14, a helium channel 15, a cooling water circulation channel 16, an annular helium groove 17, a second valve body 23, a first valve body 24, a first pneumatic valve 18, a second pneumatic valve 19, a pressure regulating valve 20, a gate valve 21, a molecular pump 22, a dry pump 26, a gas cabinet 27, a buffer component 25, a sealing ring 28, a central support 29, a valve plate 30, an elastic component 31 and a cross beam 32.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the utility model.
The buffer member 25 for an etching apparatus according to an embodiment of the first aspect of the present invention is described below with reference to fig. 3.
As shown in fig. 3, a buffer member 25 for an etching apparatus according to an embodiment of the present invention, wherein the etching apparatus includes: a chamber 1, a first valve body 24 and a damping member 25. Specifically, a cavity is defined in the cavity 1, a vacuum-pumping pipeline communicated with the cavity is arranged on the cavity 1, the vacuum-pumping pipeline is connected with the dry pump 26 so as to keep a vacuum environment in the cavity, the vacuum-pumping pipeline and the dry pump 26 are both located outside the cavity, and the wafer 12(wafer) is fixed in the cavity.
Further, the first valve body 24 is arranged on the vacuum-pumping pipeline and located between the cavity 1 and the dry pump 26, and is used for controlling the on-off of the vacuum-pumping pipeline, when the cavity needs to be vacuumized, the first valve body 24 is opened, the vacuum-pumping pipeline is in a passage state, and when the cavity does not need to be vacuumized, the first valve body 24 disconnects the vacuum-pumping pipeline.
Further, a buffer member 25 is provided on the evacuation line between the chamber 1 and the first valve body 24 to reduce an instantaneous suction force to the wafer 12 at the time of evacuation.
It can be understood that, in the related art, since the wafer is fixed in the chamber, when the dry pump is started to vacuumize the chamber, a large instant suction force occurs, which is opposite to the direction of the force for fixing the wafer in the chamber and is greater than the force for fixing the wafer, so that the wafer is broken, and the cost is wasted. In the embodiment of the present invention, the buffering member 25 is disposed on the evacuation pipeline, so that when the dry pump 26 is started, the instant suction force to the wafer 12 in the chamber can be reduced, and the wafer 12 is prevented from being broken and broken.
According to the buffer member 25 for the etching apparatus of the embodiment of the utility model, by arranging the buffer member 25 in the evacuation pipeline, when the dry pump 26 is started, the buffer member 25 can slow down the instant suction acting force on the wafer 12 in the chamber, thereby avoiding the phenomenon that the wafer 12 in the chamber is broken due to the strong contrast action between the instant suction acting force and the acting force of the fixed wafer 12, and preventing the waste of the production cost.
As shown in fig. 4 and 5, according to one embodiment of the present invention, the buffering member 25 includes: a center support 29, a sealing ring 28, a valve plate 30 and an elastic piece 31. Specifically, the central support 29 is fixedly arranged on the evacuation pipeline, a cross beam 32 is arranged in the central support 29, and the sealing ring 28 is sleeved on the periphery of the central support 29 to play a role in sealing.
The valve plate 30 is rotatably connected to a cross member 32, the suction action of the dry pump 26 drives the valve plate 30 to switch between an open position and a closed position, and the elastic member 31 is connected between the valve plate 30 and the cross member 32, the elastic member 31 is in a natural state when the valve plate 30 is in the closed position, and the elastic member 31 is in a compressed state when the valve plate 30 is in the open position.
It can be understood that when the dry pump 26 is started, the suction acting force will pull the valve plate 30 to a certain angle, that is, the valve plate 30 is switched from the closed position to the open position, and due to the shielding effect of the valve plate 30, the instant suction acting force to the wafer 12 in the chamber can be reduced, and the wafer 12 is prevented from being damaged.
Optionally, the central bracket 29 is formed as a stainless steel bracket.
According to an alternative embodiment of the present invention, the cross member 32 includes a first valve plate 30, the first valve plate is rotatably connected to one side of the cross member 32, and the elastic member 31 is disposed between the first valve plate and the cross member 32.
Further, the other side of the cross member 32 is provided with a closing piece (not shown) which is fixedly connected to the inner peripheral walls of the cross member 32 and the center bracket 29, respectively, and closes the opening on the other side of the cross member 32. That is, in this embodiment, only one side of the cross member 32 is provided with the first valve sheet, which is switchable between the closed position and the open position.
Further, the valve plate 30 further comprises a second valve plate rotatably connected to the other side of the cross member 32, and an elastic member 31 is disposed between the second valve plate and the cross member 32. That is, the valve sheet 30, i.e., the first valve sheet and the second valve sheet, are respectively disposed on both sides of the cross member 32, and both the valve sheets 30 can be switched between the open position and the closed position.
As shown in fig. 5, the central support 29 is formed in a circular ring structure, a cross beam 32 is disposed along a radial direction in the central support 29, the first valve sheet and the second valve sheet are disposed on two sides of the cross beam 32, and the first valve sheet and the second valve sheet are disposed in a central symmetry manner around a center of the central support 29. When the dry pump 26 is started, the first valve plate and the second valve plate rotate around the cross beam 32 simultaneously under the action of suction force and rotate from the closed position to the open position.
According to an alternative example of the present invention, the cross member 32 includes a plurality of cross members, the valve sheet 30 includes a plurality of cross members, each valve sheet 30 is rotatably connected to the corresponding cross member 32, and the elastic member 31 is disposed between each valve sheet 30 and the corresponding cross member 32. In the description of the present invention, "a plurality" means two or more.
In a specific example, the cross beams 32 include two cross beams, and the valve sheet 30 includes two cross beams, for example, the two cross beams 32 can be formed in a substantially triangular configuration, and the two valve sheets 30 are respectively located on the sides of the two cross beams 32 away from each other. An elastic piece 31 is arranged between each valve plate 30 and the corresponding cross beam 32.
In another specific example, the number of the cross beams 32 is three, and the number of the valve sheet 30 is also three, for example, the three cross beams 32 are formed into an isosceles triangle, and the three valve sheets 30 are respectively located on one side of the corresponding cross beam 32 facing the inner peripheral wall of the center bracket 29. An elastic piece 31 is arranged between each valve plate 30 and the corresponding cross beam 32.
According to the optional embodiment of the utility model, the thickness of the valve plate 30 is t, wherein t is more than or equal to 1mm and less than or equal to 3mm, for example, the thickness t of the valve plate 30 can be 1mm, 2mm and 3 mm.
According to another embodiment of the present invention, the valve plate 30 is formed of stainless steel, which can prevent corrosion and has a long service life.
According to yet another embodiment of the present invention, the angle between the open position and the closed position of the valve plate 30 is α, where α is 0 ° or more and 60 ° or less. For example, the included angle α may be 10 °, 20 °, 30 °, 40 °, 50 °, 60 °, and the like.
It should be noted that, as shown in fig. 1, the internal structure of the chamber 1 mainly includes a base 11, a ceramic seat 10, a shielding ring 9, an insulating ring 8, a ceramic pressure ring 7, a limiting ring 5, and an electrode 6. The base 11 is fixed on the inner bottom surface of the cavity 1, and the base 11, the shielding ring 9 and the limiting ring 5 play roles in shielding an electric field and grounding; the ceramic seat 10, the insulating ring 8 and the ceramic pressure ring 7 completely coat the electrode 6, so that the electrode cannot be conducted with other metal pieces, and the insulating effect is achieved.
As shown in fig. 2, the electrode 6 is formed by welding two parts, namely a top plate 13 and a bottom plate 14, wherein symmetrical annular helium grooves 17 are formed in the upper surface of the top plate 13, a helium channel 15 and a cooling water circulation channel 16 are formed in the lower surface of the top plate 13, and radio frequency copper column connectors, a helium gas inlet, a cooling water inlet and a cooling water outlet are symmetrically distributed on the periphery of the bottom plate 14; during the process, a large amount of plasma etches the surface of the wafer 12 to generate heat, and at the moment, helium enters the lower electrode 6 from the air inlet of the bottom plate 14, flows to the air outlet in the center of the electrode 6 from the helium channel 15, and is uniformly dispersed to the back of the wafer 12 through the annular helium groove 17, so that the wafer 12 is cooled more uniformly, and the temperature of the wafer 12 is reduced, thereby obtaining a better process result.
High-frequency voltage is applied to the electrode 6 by radio frequency, so that the electrode 6 is heated, cooling water enters the electrode 6 from the water inlet of the bottom plate 14, flows in the circulating water channel completely covering the electrode 6, and finally flows out from the water outlet, most of heat of the electrode 6 is taken away, and ideal process results are guaranteed.
The upper surface and the lower surface of the polytetrafluoroethylene sleeve 2 are respectively sealed with the electrode 6 and the cavity 1 by sealing rings to form a vacuum environment, so that helium can completely enter the electrode 6 for cooling the wafer 12, and when the equipment is in a process state, the helium enters a channel of the polytetrafluoroethylene sleeve 2 from the bottom of the cavity 1 and then enters an internal channel of the electrode 6, and finally reaches the back of the wafer 12; in the process state, the plasma etches the surface of the wafer 12 to generate higher heat, and helium gas is uniformly introduced into the back of the wafer 12, so that the wafer 12 can be comprehensively cooled, and ideal etching uniformity is achieved.
Referring to fig. 3, the pneumatic valve 18 is used when the cavity 1 is opened for inflation, the pneumatic valve 19 controls the on/off of helium, the pressure regulating valve 20 is used for regulating the pressure of the cavity, the gate valve 21 is used for controlling the on/off of the molecular pump 22 and the cavity 1, the second valve body 23 (pre-stage angle valve) is used for controlling the on/off of the molecular pump 22 and the dry pump 26, the molecular pump 22 can enable the cavity process to require a high vacuum environment, the first valve body 24 (e.g. pre-stage angle valve) is used for controlling the on/off of the cavity 1 and the dry pump 26, and the gas holder 27 provides the cavity 1 with chemical gases required by the process.
A special buffering member 25 of a KF interface is placed at the rear end of the first valve body 24 (i.e., the pre-extraction angle valve), and the structure includes a sealing ring 28 of fluororubber, a center bracket 29 of stainless steel, two valve plates 30 and an elastic member 31 (e.g., a spring); the two valve plates 31 are located at the horizontal position in the atmospheric state, the inner circle of the central support 29 can be basically sealed, the elastic piece 31 is arranged between the valve plates 30 and the cross beam 32 of the central support 29, when the dry pump 26 is started, the suction acting force can pull the two valve plates 30 at the horizontal position into a certain included angle, and the elastic piece 31 can enable the two valve plates 30 to be slowly opened to form the included angle alpha, so that the wafer 12 cannot be broken due to the fact that the cavity is subjected to overlarge instantaneous pressure, the structure can effectively solve the problem, and the specific operation flow chart is shown in fig. 6.
Other configurations and operations of the buffer member for an etching apparatus according to an embodiment of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
The utility model also provides an etching device which comprises the buffering component 25 for the etching device, so that the advantages of preventing the wafer 12 from forming fragments, avoiding causing cost waste and the like are achieved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the utility model have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the utility model, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A buffer member (25) for an etching apparatus, characterized in that the etching apparatus comprises:
the wafer vacuum forming device comprises a cavity body (1), wherein a cavity is defined in the cavity body (1), a vacuum pumping pipeline communicated with the cavity is arranged on the cavity body (1), the vacuum pumping pipeline is connected with a dry pump (26) so that the vacuum environment is kept in the cavity, the vacuum pumping pipeline and the dry pump (26) are both positioned outside the cavity body, and a wafer (12) is fixed in the cavity body;
the first valve body (24) is arranged on the vacuumizing pipeline, is positioned between the cavity (1) and the dry pump (26), and is used for controlling the on-off of the vacuumizing pipeline;
the buffer component (25) is arranged on the vacuum pumping pipeline and is positioned between the cavity (1) and the first valve body (24) so as to reduce the instant suction acting force on the wafer (12) during vacuum pumping.
2. The buffer member (25) for an etching apparatus according to claim 1, wherein the buffer member (25) comprises:
the central support (29) is fixedly arranged on the vacuum pumping pipeline, and a cross beam (32) is arranged in the central support (29);
the sealing ring (28) is sleeved on the periphery of the central support (29);
the valve plate (30), the valve plate (30) is rotatably connected to the cross beam (32), and the suction action of the dry pump (26) can drive the valve plate (30) to switch between an opening position and a closing position;
elastic component (31), elastic component (31) are connected valve block (30) with between crossbeam (32) valve block (30) are in when closed position elastic component (31) are in natural state, valve block (30) are in when open position elastic component (31) are in the compression state.
3. The buffer member (25) for etching apparatus according to claim 2, wherein the cross member (32) comprises one, the valve sheet (30) comprises a first valve sheet rotatably connected to one side of the cross member (32), and the elastic member (31) is disposed between the first valve sheet and the cross member (32).
4. The buffer member (25) for etching apparatus as set forth in claim 3, wherein the other side of the cross member (32) is provided with a closing piece fixedly connected to the inner peripheral walls of the cross member (32) and the center frame (29), respectively, and closing the opening of the other side.
5. The buffer member (25) for etching apparatus according to claim 3, wherein the valve sheet (30) further comprises a second valve sheet rotatably connected to the other side of the cross member (32), and the elastic member (31) is provided between the second valve sheet and the cross member (32).
6. The buffer member (25) for etching apparatus according to claim 2, wherein the cross member (32) comprises a plurality of cross members, the valve sheet (30) comprises a plurality of cross members, each valve sheet (30) is rotatably connected to the corresponding cross member (32), and the elastic member (31) is disposed between each valve sheet (30) and the corresponding cross member (32).
7. The buffer member (25) for etching apparatus as set forth in claim 6, wherein the thickness of the valve sheet (30) is t, wherein t is 1 mm. ltoreq. t.ltoreq.3 mm.
8. The buffer member (25) for etching apparatus according to claim 7, wherein the valve sheet (30) is formed of a stainless steel sheet.
9. The buffer member (25) for etching apparatus according to claim 8, wherein the angle between the open position and the closed position of the valve sheet (30) is α, wherein 0 ° α ≦ 60 °.
10. Etching apparatus, characterized in that it comprises a buffer member (25) for etching apparatus according to any one of claims 1-9.
CN202121224576.8U 2021-06-02 2021-06-02 Buffer member for etching device and etching device Active CN216120217U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121224576.8U CN216120217U (en) 2021-06-02 2021-06-02 Buffer member for etching device and etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121224576.8U CN216120217U (en) 2021-06-02 2021-06-02 Buffer member for etching device and etching device

Publications (1)

Publication Number Publication Date
CN216120217U true CN216120217U (en) 2022-03-22

Family

ID=80720073

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121224576.8U Active CN216120217U (en) 2021-06-02 2021-06-02 Buffer member for etching device and etching device

Country Status (1)

Country Link
CN (1) CN216120217U (en)

Similar Documents

Publication Publication Date Title
TWI771470B (en) Substrate support with electrically floating power supply
US6074518A (en) Plasma processing apparatus
US5221403A (en) Support table for plate-like body and processing apparatus using the table
JP3210207B2 (en) Plasma processing equipment
JP5444044B2 (en) Plasma processing apparatus and shower head
JP5367522B2 (en) Plasma processing apparatus and shower head
JP5348919B2 (en) Electrode structure and substrate processing apparatus
US20100190350A1 (en) Plasma etching apparatus, plasma etching method and storage medium
JP4793662B2 (en) Microwave plasma processing equipment
JP2010212425A (en) Shower head and plasma processing apparatus
KR20120074210A (en) Plasma processing apparatus
US20110284165A1 (en) Plasma processing apparatus
US20210241997A1 (en) Substrate processing apparatus and substrate processing method
CN216120217U (en) Buffer member for etching device and etching device
JP4003305B2 (en) Plasma processing method
JP2001085415A (en) Device and method for improved plasma processing of substrate
US20230092691A1 (en) Plasma Source Ion Implanter with Preparation Chamber for Linear or Cross Transferring Workpiece
JP2003051248A (en) Substrate treatment method, film forming method, manufacturing method of electron source, and manufacturing device of the electron source
JPH11200031A (en) Sputtering device and high speed evacuating method therefor
JP5661513B2 (en) Plasma processing equipment
JPH0927294A (en) Ion pump
TWI834075B (en) Confinement ring assembly, plasma treatment device and exhaust control method thereof
TWI828132B (en) Confinement ring, plasma processing device and exhaust control method thereof
CN218115568U (en) Multifunctional film coating equipment
JP3646756B2 (en) Plasma processing equipment

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant