CN116783711A - 检测装置 - Google Patents

检测装置 Download PDF

Info

Publication number
CN116783711A
CN116783711A CN202280011674.4A CN202280011674A CN116783711A CN 116783711 A CN116783711 A CN 116783711A CN 202280011674 A CN202280011674 A CN 202280011674A CN 116783711 A CN116783711 A CN 116783711A
Authority
CN
China
Prior art keywords
photodiode
signal
detection
circuit
photosensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280011674.4A
Other languages
English (en)
Chinese (zh)
Inventor
齐藤恵一
中村卓
小出元
染谷隆夫
横田知之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Japan Display Inc
Original Assignee
University of Tokyo NUC
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC, Japan Display Inc filed Critical University of Tokyo NUC
Publication of CN116783711A publication Critical patent/CN116783711A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/117—Identification of persons
    • A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/117—Identification of persons
    • A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
    • A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value ; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid or cerebral tissue
    • A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value ; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid or cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Animal Behavior & Ethology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Veterinary Medicine (AREA)
  • Public Health (AREA)
  • Biophysics (AREA)
  • Pathology (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Molecular Biology (AREA)
  • Surgery (AREA)
  • Multimedia (AREA)
  • Optics & Photonics (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280011674.4A 2021-01-26 2022-01-26 检测装置 Pending CN116783711A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021010589 2021-01-26
JP2021-010589 2021-01-26
PCT/JP2022/002773 WO2022163681A1 (ja) 2021-01-26 2022-01-26 検出装置

Publications (1)

Publication Number Publication Date
CN116783711A true CN116783711A (zh) 2023-09-19

Family

ID=82653573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280011674.4A Pending CN116783711A (zh) 2021-01-26 2022-01-26 检测装置

Country Status (4)

Country Link
US (1) US12237346B2 (https=)
JP (1) JP7536246B2 (https=)
CN (1) CN116783711A (https=)
WO (1) WO2022163681A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7746201B2 (ja) * 2022-03-16 2025-09-30 株式会社Magnolia White 検出装置
WO2024195634A1 (ja) * 2023-03-23 2024-09-26 株式会社ジャパンディスプレイ 検出装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0340574A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JP2009032005A (ja) 2007-07-26 2009-02-12 Toshiba Corp 入力表示装置および入力表示パネル
US8294079B2 (en) 2008-04-28 2012-10-23 Sharp Kabushiki Kaisha Diode, photodetector circuit including same, and display device
US9595558B2 (en) 2013-11-12 2017-03-14 Intrinsix Corporation Photodiode architectures and image capture methods having a plurality of photodiode with a shared electrode
DE102011081564B4 (de) * 2011-08-25 2015-04-02 Ifm Electronic Gmbh Empfänger für einen optischen Entfernungsmesser
CN107078151B (zh) * 2014-01-31 2021-05-25 英属维尔京群岛商天材创新材料科技股份有限公司 包括金属纳米结构复合层的串联有机光伏器件
IL246796B (en) * 2016-07-14 2020-05-31 Semi Conductor Devices An Elbit Systems Rafael Partnership A dual band photo-detector and a method thereof
JP2018116108A (ja) 2017-01-17 2018-07-26 株式会社ジャパンディスプレイ 表示装置
CN110323235A (zh) * 2018-03-29 2019-10-11 夏普株式会社 摄像面板
JPWO2021260494A1 (https=) * 2020-06-26 2021-12-30

Also Published As

Publication number Publication date
WO2022163681A1 (ja) 2022-08-04
JP7536246B2 (ja) 2024-08-20
US12237346B2 (en) 2025-02-25
US20230369355A1 (en) 2023-11-16
JPWO2022163681A1 (https=) 2022-08-04

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