CN116782494A - Composite substrate, preparation method thereof and circuit board - Google Patents
Composite substrate, preparation method thereof and circuit board Download PDFInfo
- Publication number
- CN116782494A CN116782494A CN202310914376.2A CN202310914376A CN116782494A CN 116782494 A CN116782494 A CN 116782494A CN 202310914376 A CN202310914376 A CN 202310914376A CN 116782494 A CN116782494 A CN 116782494A
- Authority
- CN
- China
- Prior art keywords
- layer
- resistance
- composite substrate
- thickness
- resistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 234
- 239000000463 material Substances 0.000 claims description 30
- 238000004381 surface treatment Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910018100 Ni-Sn Inorganic materials 0.000 claims description 4
- 229910006091 NiCrSi Inorganic materials 0.000 claims description 4
- 229910018532 Ni—Sn Inorganic materials 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 29
- 239000011888 foil Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229920005992 thermoplastic resin Polymers 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229920001187 thermosetting polymer Polymers 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- -1 polyethylene Polymers 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910001120 nichrome Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910019819 Cr—Si Inorganic materials 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004339 Ti-Si Inorganic materials 0.000 description 2
- 229910010978 Ti—Si Inorganic materials 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 229920000180 alkyd Polymers 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229920006259 thermoplastic polyimide Polymers 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
Abstract
The invention relates to a composite substrate, a preparation method thereof and a circuit board, wherein the composite substrate comprises a basal layer and a first resistance layer arranged on at least one surface of the basal layer; the thickness of the first resistance layer satisfies the following relation: d=1.2/R+K, wherein d is the thickness of the first resistance layer, R is the sheet resistance, and the value range of K is-0.3-3. According to the invention, the resistance R of the resistance layer and the thickness d of the resistance layer are controlled to meet a certain linear relation, so that the composite substrate meeting the equation has good resistance stability, and the preparation of the composite substrate by the method disclosed by the invention has the advantages of simple process flow, simplified preparation process and improved production efficiency of the composite substrate.
Description
Technical Field
The invention belongs to the technical field of thin film devices, and relates to a composite substrate, a preparation method thereof and a circuit board.
Background
Composite substrates are a common raw material for preparing buried resistive elements. However, in the prior art, the stability of the resistance value of the prepared composite substrate with a specific resistance value is poor, and it is often necessary to stop the preparation process in operation and directly measure the resistance value of the product in the process section to see whether the prepared composite substrate reaches the expected resistance value. And when the expected resistance is not reached, continuing to process the composite substrate until the expected resistance is reached. However, the uncertainty factor in the preparation process is large, and the continuous processing tends to easily cause large deviation between the resistance value of the resistance layer and the standard value, so that the product is finally scrapped. In addition, in order to obtain the composite substrate with the ideal resistance value, the conventional preparation needs continuous shutdown detection, and the process also causes the reduction of working efficiency and the waste of resources. Accordingly, it is desirable to provide a composite substrate that can reduce the number of detection resistance steps in the manufacturing process.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a composite substrate, a preparation method thereof and a circuit board, wherein the composite substrate with an ideal resistance value R is prepared by limiting the relation between the resistivity rho and the thickness in a first resistance layer in the composite substrate, and the obtained composite substrate has stable performance, simplifies the preparation process and improves the production efficiency.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a composite substrate comprising a base layer and a first resistive layer disposed on at least one face of the base layer;
the thickness of the first resistance layer satisfies the following relation:
d＝1.2/R+K
wherein d is the thickness of the first resistive layer; r is square resistance; k is in the range of-0.3 to 3;1.2 is presented in mu.Ω & m.
Preferably, d has a value in the range of 5nm to 3. Mu.m.
Preferably, the value range of R is 5-100 omega.
Preferably, the material of the first resistive layer includes any one or a combination of at least two of NiCrSi, niCrAlSi, niP, niCr, alN, tiN, pt, cr, cr-SiO, cr-Si, ti-W, taN, mo or Ni-Sn.
Preferably, the composite substrate further comprises a film layer arranged on the surface of one side of the first resistance layer away from the basal layer.
Preferably, the material of the film layer includes any one or a combination of at least two of polystyrene-based thermoplastic resin, vinyl acetate-based thermoplastic resin, polyester-based thermoplastic resin, polyethylene-based thermoplastic resin, polyamide-based thermoplastic resin, rubber-based thermoplastic resin, acrylate-based thermoplastic resin, phenolic-based thermosetting resin, epoxy-based thermosetting resin, thermoplastic polyimide thermosetting resin, urethane-based thermosetting resin, melamine-based thermosetting resin, alkyd-based thermosetting resin, or ABF resin.
Preferably, a conductive layer is arranged on one side surface of the film layer, which is far away from the first resistance layer.
Preferably, the conductive layer comprises a single layer or multiple layers.
Preferably, the material of the conductive layer is a foil containing at least one of copper, aluminum, titanium, zinc, iron, nickel, chromium, cobalt, silver or gold.
Preferably, the thickness of the conductive layer is 8 μm to 35 μm.
Preferably, a second resistive layer is disposed between the film layer and the conductive layer.
Preferably, the thickness of the second resistance layer is 5nm to 3 μm.
In a second aspect, the present invention provides a method for preparing a composite substrate according to the first aspect, the method comprising the steps of:
step one: setting a resistance value R of a first resistance layer in the composite substrate layer;
step two: calculating the thickness d of the first resistive layer according to the resistance value R set in the first step and the formula d=1.2/r+k:
step three: surface treatment is carried out on the surface of the basal layer;
step four: and (3) forming a first resistance layer on the surface of the basal layer in the step (III) to prepare the composite substrate.
Preferably, the first resistive layer is formed by electroplating, electroless plating, physical vapor deposition, or chemical vapor deposition. Preferably, after the first resistive layer is disposed, the method further includes: a first resistive layer is disposed away from the film layer on a side surface of the base layer.
Preferably, after the film layer is provided, the method further comprises: and a second resistance layer on a side surface of the film layer away from the first resistance layer.
Preferably, after disposing the second resistive layer, the method further includes: and a conductive layer on a side surface of the second resistance layer away from the film layer.
In a third aspect, the present invention provides a circuit board comprising a composite substrate as described in the first aspect.
By the technical scheme, the invention has the following beneficial effects:
according to the invention, the sheet-shaped laminated composite base material is designed, and the resistivity rho, the resistance R and the thickness d of the resistance layer are controlled to meet a certain linear relation, so that the composite base material meeting the equation has good resistance stability, and the preparation method for preparing the composite base material has the advantages of simple process flow, simplified preparation process and improved production efficiency of the composite base material.
Drawings
FIG. 1 is a schematic structural diagram of the composite substrate of example 1.
FIG. 2 is a schematic structural diagram of the composite substrate of example 2.
FIG. 3 is a schematic structural diagram of the composite substrate of example 3.
FIG. 4 is a schematic structural diagram of the composite substrate of example 4.
Wherein:
1-substrate layer, 2-first resistance layer, 3-membrane layer, 4-second resistance layer, 5-conducting layer, 6-first conducting layer, 7-second conducting layer.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
Through a large number of data tests, researchers find that the resistance value R, the resistivity rho and the thickness of the prepared composite substrate have a certain linear relation. The composite substrate obtained under the condition of maintaining the linear relation has stable sheet resistance, simplifies the preparation process and improves the production efficiency.
According to one aspect of the present invention, there is provided a composite substrate comprising a base layer and a first resistive layer disposed on at least one face of the base layer;
the thickness of the first resistance layer satisfies the following relation:
d＝1.2/R+K
wherein d is the thickness of the first resistor layer, R is the sheet resistance, 1.2 is mu omega m, and K is in a value range of-0.3 to 3, for example, 0.3, 0, 1, 2 or 3, or a range between any two values.
The invention discovers that the thickness of the resistance layer has a certain linear correlation with the resistance value within a certain range, and the thickness of the resistance layer can be regulated and controlled through d=1.2/R+K. In order to obtain a resistive layer with a certain resistance value, the thickness of the resistive layer needs to be continuously adjusted in the process of actually preparing the resistive layer, for example, each time the resistive layer with a certain thickness is obtained by sputtering, whether the resistance value reaches the required value needs to be detected, and the sputtering and the detection of the resistance value are repeatedly stopped for a plurality of times until the resistive layer reaches the target resistance value, so that the production efficiency is reduced. However, through d=1.2/r+k relation, the resistance layer with the required resistance value can be obtained at one time, repeated detection in the preparation process is not needed, the production time is saved, and the production efficiency is improved.
In some embodiments, the value of the first resistive layer d ranges from 5nm to 3 μm, for example, from 5nm, 10nm, 80nm, 100nm, 300nm, 500nm, 1 μm, 2 μm, 2.5 μm, or 3 μm, or a range between any two of the above values, and preferably, the value of the first resistive layer d ranges from 5nm to 100nm.
In some embodiments, the value of the resistance R of the first resistive layer is 5 to 100 Ω, and on the basis of satisfying the above range, it is also required to satisfy the thickness relation of the first resistive layer, for example, the value of the resistance R of the first resistive layer may be 5 Ω, 10 Ω, 15 Ω, 20 Ω, 25 Ω, 30 Ω, 35 Ω, 40 Ω, 45 Ω, 50 Ω, 55 Ω, 60 Ω, 65 Ω, 70 Ω, 75 Ω, 80 Ω, 85 Ω, 90 Ω, 95 Ω, or 100 Ω, or a range between any two of the above values, and preferably the value of the resistance R of the first resistive layer is 20 to 80 Ω.
The thickness of the resistor layer determines the resistor layer, and the invention limits the thickness of the first resistor layer d to be in the range of 5 nm-3 mu m, so that the resistance value of the resistor layer can have the linear relation in the range of 5-100 omega. The thickness of the resistance layer with the resistance value in the range can be calculated through the linear formula, and then the resistance layer with the resistance value can be obtained at one time in the preparation process without repeated sputtering measurement. The material of the first resistive layer may include any one or at least two of NiCrSi, niCrAlSi, niP, niCr, alN, tiN, cr-SiO, cr-Si, pt, cr, ti-Si, ti-W, taN, and Ni-Sn, and typical but non-limiting combinations include combinations of NiCrSi and NiCrAlSi, combinations of NiCrAlSi and NiP, combinations of NiP and NiCr, combinations of NiCr and AlN, combinations of AlN and TiN, combinations of TiN and Pt, combinations of Pt and Cr-SiO, combinations of Cr-SiO and Cr-Si, combinations of Cr-Si and Ti-Si, combinations of Ti-Si and Ti-W, combinations of Ti-W and TaN, combinations of TaN and Mo, and combinations of Mo and Ni-Sn.
The material of the base layer is conductive material or dielectric material, and the base layer may be a single-layer structure or a multi-layer structure.
The conductive material includes, but is not limited to, at least one of copper, aluminum, titanium, zinc, iron, nickel, chromium, cobalt, silver and gold, specifically, the base layer may be at least one of copper foil, aluminum foil, titanium foil, zinc foil, iron foil, nickel foil, chromium foil, cobalt foil, silver foil or gold foil, an alloy foil containing at least two of copper, aluminum, titanium, zinc, iron, nickel, chromium, cobalt, silver and gold, or a composite foil formed by compounding at least two of copper foil, aluminum foil, titanium foil, zinc foil, iron foil, nickel foil, chromium foil, cobalt foil, silver foil and gold foil.
Such dielectric materials include, but are not limited to, PET, PP, PS, ABF films, BT resins, polyacrylic acid, polyurethane, polyimide, and the like. In the base layer having a multilayer structure, materials between different layers may be the same or different.
The thickness of the base layer is 3 to 20. Mu.m, and may be, for example, 3 μm, 5 μm, 10 μm, 15 μm or 20 μm, or a range between any two of the above values.
In some embodiments, the composite substrate further comprises a film layer disposed on a side surface of the first resistive layer remote from the base layer.
In some embodiments, the film layer has a thickness of 0.5 to 100 μm. The thickness of the film layer may be, for example, 2 μm, 5 μm, 7 μm, 10 μm, 12 μm, 15 μm, 20 μm, 30 μm, 40 μm, 55 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, or a range between any two of the above values.
In some embodiments, the material film layer of the film layer includes any one or a combination of at least two of a polystyrene-based thermoplastic resin, a vinyl acetate-based thermoplastic resin, a polyester-based thermoplastic resin, a polyethylene-based thermoplastic resin, a polyamide-based thermoplastic resin, a rubber-based thermoplastic resin, an acrylate-based thermoplastic resin, a phenolic-based thermosetting resin, an epoxy-based thermosetting resin, a thermoplastic polyimide thermosetting resin, a urethane-based thermosetting resin, a melamine-based thermosetting resin, an alkyd-based thermosetting resin, or an ABF resin. Illustratively, the film layer is selected from at least one of modified epoxy resin, modified acrylic resin, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polystyrene, polyvinyl chloride, polysulfone, polyphenylene sulfide, polyetheretherketone, polyphenylene oxide, polytetrafluoroethylene, liquid crystal polymer, polyoxaurea, epoxy glass cloth, or BT resin. The specific thickness and materials of the film layer are selected and set according to actual needs by those skilled in the art.
In some embodiments, a side surface of the film layer remote from the first resistive layer is provided with a conductive layer. The conducting layer further forms a foil-covered plate containing the first resistance layer, and the foil-covered plate has a four-layer structure and can be directly applied to a hard plate or a soft plate. Specifically, the conductive layer may be a single-layer structure or a stacked structure of a plurality of layers. That is, the conductive layer may be a copper foil, an aluminum foil, a titanium foil, a zinc foil, an iron foil, a nickel foil, a chromium foil, a cobalt foil, a silver foil, or a gold foil, or may be an alloy foil containing at least two of copper, aluminum, titanium, zinc, iron, nickel, chromium, cobalt, silver, and gold, or may be a composite foil formed by compositing at least two of copper foil, aluminum foil, titanium foil, zinc foil, iron foil, nickel foil, chromium foil, cobalt foil, silver foil, and gold foil. The material of the conductive layer and the material of the base layer may be the same or different, and those skilled in the art may set the conductive layer and the base layer according to actual needs.
The thickness of the conductive layer is 8 to 35. Mu.m, for example, 8 μm, 10 μm, 20 μm, 30 μm or 35 μm, or a range between any two of the above values.
In an alternative embodiment, a second resistive layer is disposed between the membrane layer and the conductive layer, thereby forming an asymmetric structure. The material and thickness of the second resistive layer may be the same as or different from those of the first resistive layer, and may be set by those skilled in the art according to actual needs. The thickness of the second resistive layer is 5nm to 3. Mu.m, and may be, for example, 5nm, 10nm, 50nm, 100nm, 500nm, 1. Mu.m, 2. Mu.m, or 3. Mu.m, or a range between any two of the above values.
According to another aspect of the present invention, there is provided a method for preparing the composite substrate, the method comprising the steps of:
step one: setting a resistance value R of a first resistance layer in the composite substrate layer;
step two: calculating the thickness d of the first resistance layer according to the resistance value R set in the step one and the formula d=1.2/R+K;
step three: surface treatment is carried out on the surface of the basal layer;
step four: and (3) forming a first resistance layer on the surface of the basal layer in the step (III) to prepare the composite substrate.
It should be noted that, the manner of forming the first resistive layer includes any one or a combination of at least two of electroplating, electroless plating, physical vapor deposition, and chemical vapor deposition. The surface treatment includes corona, plasma treatment, electroplating, electroless plating, sputtering, coating of a coupling agent or adhesive, etching, polishing, or other means capable of achieving the present solution, and is not specifically described in detail. The specific surface treatment or the combination of several surface treatments is selected by the person skilled in the art according to the actual needs.
In some embodiments, the first resistive layer further comprises: a first resistive layer is disposed away from the film layer on a side surface of the base layer. On one hand, the film layer can protect the first resistance layer and prevent the first resistance layer from being damaged by external force; on the other hand, when the composite metal foil is adhered to the circuit board, the film layer can be adhered to the first resistance layer and the circuit board, so that the peeling strength between the composite foil and the circuit board is further improved, the composite metal foil is not easy to peel off from the circuit board, and the preparation of the resistance layer with the specific shape in the later stage is facilitated. In addition, the film layer can be prepared into a foil-covered plate after being arranged, and can also be directly applied to a soft plate.
According to another aspect of the present invention, a circuit board is provided that includes the composite substrate.
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
Example 1
The present embodiment provides a composite substrate, the structure of which is shown in fig. 1, and the composite substrate includes a base layer 1, a first resistive layer 2, a film layer 3, a second resistive layer 4 and a conductive layer 5, which are sequentially stacked from bottom to top.
The material of the basal layer 1 is PET, and the thickness is 5 mu m; the material of the film layer 3 is polystyrene thermoplastic resin, and the thickness is 8 mu m; the conductive layer 5 is made of copper and has a thickness of 10 μm;
the materials of the first resistor layer 2 and the second resistor layer 4 are respectively NiCr, and the thicknesses respectively satisfy the following relation:
d＝1.2/R+K
wherein d is the thickness of the resistance layer of 5nm, R is 5Ω, and K is-0.235.
Example 2
The present embodiment provides a composite substrate having a symmetrical structure as shown in fig. 2, and a first resistive layer 2, a film layer 3, a second resistive layer 4, and a conductive layer 5 are formed on both sides of a base layer 1.
The material of the basal layer 1 is BT resin, and the thickness is 20 mu m; the material of the film layer 3 is polyamide thermoplastic resin, and the thickness is 7 mu m; the conductive layer 5 is made of aluminum and has a thickness of 15 mu m;
the materials of the first resistor layer 2 and the second resistor layer 4 are respectively NiCr, and the thicknesses respectively satisfy the following relation:
d＝1.2/R+K
wherein d is the thickness of the resistor layer of 21.8nm, R is 50Ω, and K is-0.0022.
Example 3
The present embodiment provides a composite substrate, the structure of which is shown in fig. 3, and the composite substrate includes a base layer 1, a first resistive layer 2, a film layer 3, a second resistive layer 4, a first conductive layer 6 and a second conductive layer 7, which are sequentially stacked from bottom to top.
The base layer 1 is made of polyimide and has a thickness of 3 mu m; the material of the film layer 3 is acrylic thermoplastic resin, and the thickness is 100 mu m; the material of the first conductive layer 6 is aluminum, and the thickness is 15 mu m; the second conductive layer is made of zinc and has a thickness of 35 mu m;
the materials of the first resistor layer 2 and the second resistor layer 4 are respectively NiP, and the thicknesses respectively meet the following relations:
d＝1.2/R+K
wherein d is the thickness of the resistive layer of 3 μm, R is 60deg.C, and K is 2.98.
Example 4
The present embodiment provides a composite substrate having a symmetrical structure as shown in fig. 4, and a first resistive layer 2, a film layer 3, a second resistive layer 4, a first conductive layer 6, and a second conductive layer 7 are formed on both sides of a base layer 1.
The base layer 1 is made of aluminum and is 10 mu m thick; the material of the film layer 3 is polybutylene terephthalate with the thickness of 40 mu m; the materials of the first conductive layer 6 and the second conductive layer 7 are independently copper, respectively, 15 μm thick;
the materials of the first resistor layer 2 and the second resistor layer 4 are respectively NiP, and the thicknesses respectively meet the following relations:
d＝1.2/R+K
wherein d is the thickness of the first resistance layer of 3 μm, R is 100deg.C, and K is 2.985.
It should be noted that the thicknesses and materials of the first resistive layer 2 and the second resistive layer 4 may be the same or different, and the thicknesses and materials of the first conductive layer 6 and the second conductive layer 7 may be the same or different, and may be adjusted according to actual needs.
Comparative example 1
This example provides a composite substrate, which differs from example 1 in that: the thickness d of the first resistive layer is 1nm and R is 3Ω.
Comparative example 2
This example provides a composite substrate, which differs from example 1 in that: the thickness d of the first resistive layer was 5 μm and R was 150Ω.
And (3) carrying out resistance stability test on the obtained composite foil, wherein the test method comprises the following steps of: the composite foil obtained in each of the examples and comparative examples was measured at room temperature using a four-probe resistance tester, and then the resistance of the composite foil was measured at 100 ℃. The resistance stability is calculated using the following formula:
wherein R1 is the foil resistance measured at room temperature, and R2 is the foil resistance measured at 100 ℃.
The test results are shown in Table 1.
TABLE 1
| Test number | Resistance stability (%) |
| Example 1 | 2.3 |
| Example 2 | 2.6 |
| Example 3 | 1.8 |
| Example 4 | 1.4 |
| Comparative example 1 | 5.7 |
| Comparative example 2 | 4.1 |
As can be seen from table 1: according to the invention, the thickness d of the resistance layer is enabled to meet the linear relation of d=1.2/R+K by controlling the thickness d, the resistance R and the K value ranges of the resistance layer, so that the composite substrate meeting the equation has good resistance stability. Meanwhile, in the preparation process, the thickness and the resistance value of the resistance layer are adjusted through the linear relation, the procedure of measuring the resistance value in the prior art is reduced, and the process efficiency and the yield are improved.
In addition, through a large number of experiments of the invention, the linear relation between the thickness of the resistance layer and the resistance value of the resistance layer is optimized, and when the value range of the resistance layer d is 5 nm-3 mu m, the resistance value of the resistance layer can be well regulated. Meanwhile, it was unexpectedly found that the resistance of the resistive layer obtained by the above linear relation also has good stability (examples 1 to 4). This is probably because the resistive layer obtained by the linear relationship control of the present invention is one-shot formed, and the sputtering (or plating) and the detection do not need to be stopped repeatedly in the middle, and the internal atomic (or molecular) arrangement of the resistive layer is more uniform. In contrast, comparative examples 1 and 2 do not show the linear relationship between the thickness and the resistance of the resistive layer in the present invention, and therefore, the resistive layer with the desired resistance is repeatedly detected and sputtered (or electroplated) during the preparation process, and thus, delamination occurs in the resistive layer, resulting in uneven arrangement of atoms (or molecules) in the resistive layer, and thus, the stability of the resistance of the resistive layer is affected.
The detailed structural features of the present invention are described in the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be apparent to those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope of the present invention and the scope of the disclosure.
Claims (10)
1. A composite substrate comprising a base layer and a first resistive layer disposed on at least one side of the base layer;
the thickness of the first resistance layer satisfies the following relation:
d＝1.2/R+K
wherein d is the thickness of the first resistance layer, R is the sheet resistance, and the value range of K is-0.3-3.
2. The composite substrate according to claim 1, wherein d has a value in the range of 5nm to 3 μm;
preferably, the value range of R is 5-100 omega.
3. The composite substrate of claim 1 or 2, wherein the material of the first resistive layer comprises any one or a combination of at least two of NiCrSi, niCrAlSi, niP, niCr, alN, tiN, pt, cr, cr-SiO, cr-Si, ti-W, taN, mo, or Ni-Sn.
4. The composite substrate according to any one of claims 1 to 3, further comprising a film layer disposed on a side surface of the first resistive layer remote from the base layer;
preferably, the thickness of the film layer is 0.5-100 μm.
5. The composite substrate according to claim 4, wherein a conductive layer is provided on a surface of the film layer on a side remote from the first resistive layer;
preferably, the conductive layer comprises a single layer or multiple layers.
6. The composite substrate of claim 5, wherein a second resistive layer is disposed between the film layer and the conductive layer.
7. The method of producing a composite substrate according to any one of claims 1 to 6, comprising the steps of:
step one: setting a resistance value R of a first resistance layer in the composite substrate layer;
step two: calculating the thickness d of the first resistance layer according to the resistance value R set in the step one and the formula d=1.2/R+K;
step three: surface treatment is carried out on the surface of the basal layer;
step four: and (3) forming a first resistance layer on the surface of the basal layer in the step (III) to prepare the composite substrate.
8. The method of claim 7, wherein the first resistive layer is formed by electroplating, electroless plating, physical vapor deposition, or chemical vapor deposition.
9. The method of producing a composite substrate according to claim 7 or 8, wherein after providing the first resistive layer, further comprising: a film layer on a side surface of the first resistive layer remote from the base layer;
preferably, after the film layer is provided, the method further comprises: a second resistive layer disposed on a side surface of the film layer remote from the first resistive layer;
preferably, after disposing the second resistive layer, the method further includes: and a conductive layer on a side surface of the second resistance layer away from the film layer.
10. A circuit board comprising the composite substrate of any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310914376.2A CN116782494B (en) | 2023-07-25 | 2023-07-25 | Composite substrate, preparation method thereof and circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310914376.2A CN116782494B (en) | 2023-07-25 | 2023-07-25 | Composite substrate, preparation method thereof and circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116782494A true CN116782494A (en) | 2023-09-19 |
| CN116782494B CN116782494B (en) | 2024-02-20 |
Family
ID=88013505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310914376.2A Active CN116782494B (en) | 2023-07-25 | 2023-07-25 | Composite substrate, preparation method thereof and circuit board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116782494B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08319187A (en) * | 1995-03-20 | 1996-12-03 | Toshiba Corp | Highly heat conductive silicon nitride circuit substrate |
| CN1521769A (en) * | 1998-04-29 | 2004-08-18 | Ī�ٹ��ʹɷ�����˾ | Formation of thin film resistors |
| JP2006181595A (en) * | 2004-12-27 | 2006-07-13 | Hitachi Cable Ltd | Brazed product, and brazing compound material used therefor |
| CN105813839A (en) * | 2013-12-27 | 2016-07-27 | 三井金属矿业株式会社 | Composite metal foil, composite metal foil with carrier, metal-clad laminate obtained using said composite metal foil or said composite metal foil with carrier, and printed wiring board |
-
2023
- 2023-07-25 CN CN202310914376.2A patent/CN116782494B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08319187A (en) * | 1995-03-20 | 1996-12-03 | Toshiba Corp | Highly heat conductive silicon nitride circuit substrate |
| CN1521769A (en) * | 1998-04-29 | 2004-08-18 | Ī�ٹ��ʹɷ�����˾ | Formation of thin film resistors |
| JP2006181595A (en) * | 2004-12-27 | 2006-07-13 | Hitachi Cable Ltd | Brazed product, and brazing compound material used therefor |
| CN105813839A (en) * | 2013-12-27 | 2016-07-27 | 三井金属矿业株式会社 | Composite metal foil, composite metal foil with carrier, metal-clad laminate obtained using said composite metal foil or said composite metal foil with carrier, and printed wiring board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116782494B (en) | 2024-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20170273188A1 (en) | Flexible Copper Clad Laminate Having High Peel Strength and Manufacturing Method Thereof | |
| WO1986003930A1 (en) | Fine line printed conductors fabrication process | |
| CN116190022B (en) | Composite substrate and circuit board | |
| JP4406420B2 (en) | Printed circuit board with built-in thin film capacitor and manufacturing method thereof | |
| CN116137197A (en) | Composite substrate and circuit board | |
| CN116782494B (en) | Composite substrate, preparation method thereof and circuit board | |
| CN116190021B (en) | Composite metal foil and printed circuit board | |
| KR20060124505A (en) | Flexible metal clad laminate and method of manufacturing flexible metal clad laminate | |
| TWI783190B (en) | laminated body | |
| KR100649755B1 (en) | Thin film capacitor embedded printed circuit board, and methods of manufacturing the same | |
| JP2004031588A (en) | Flexible printed wiring board | |
| JPH02141233A (en) | Laminated transfer film for printed wiring board | |
| KR101012919B1 (en) | flexible metal clad laminate without adhesion and method of manufacturing flexible metal clad laminate without adhesion | |
| CN113667952A (en) | Magnetron sputtering flexible copper-clad substrate and preparation method thereof | |
| CN211481578U (en) | Flexible structure | |
| CN116612952A (en) | Thin film resistor and circuit board | |
| JPH0740636B2 (en) | Manufacturing method of copper plating film | |
| CN111465187A (en) | Copper-clad plate containing resistance layer, printed circuit board and manufacturing method thereof | |
| TWI721859B (en) | Fluoropolymer high-frequency substrate, cover film, bondply and preparation method thereof | |
| KR102612937B1 (en) | Composite substrate and manufacturing method thereof | |
| CN210899823U (en) | High-frequency fluorine-based polymer substrate, cover film and adhesive sheet | |
| CN116798713A (en) | Thin film resistor and circuit board | |
| JP2708070B2 (en) | Metal laminate and method for producing the same | |
| WO2021210478A1 (en) | Metal-coated liquid-crystal polymer film | |
| CN213733795U (en) | Copper-clad plate and copper-clad plate hot pressing assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |