CN116780329B - Refrigeration type laser TO packaging structure and packaging method thereof - Google Patents
Refrigeration type laser TO packaging structure and packaging method thereof Download PDFInfo
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- CN116780329B CN116780329B CN202310632652.6A CN202310632652A CN116780329B CN 116780329 B CN116780329 B CN 116780329B CN 202310632652 A CN202310632652 A CN 202310632652A CN 116780329 B CN116780329 B CN 116780329B
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- 238000005057 refrigeration Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 238000009713 electroplating Methods 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 238000010521 absorption reaction Methods 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 239000003990 capacitor Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The application is applicable TO the technical field of semiconductor assembly, and provides a refrigeration type laser TO packaging structure and a packaging method thereof, wherein the method comprises the following steps: attaching the lower surface of the semiconductor refrigerator to the first side of the tube seat, and connecting the semiconductor refrigerator with the first type of pins; attaching the lower surface of the backlight detector to the upper surface of the semiconductor refrigerator, and connecting the backlight detector with the second type of pins; attaching the side surface of the integrated substrate to the upper surface of the semiconductor refrigerator, and connecting the integrated substrate with the second type of pins and the third type of pins respectively; attaching a thermistor to the upper surface of the integrated substrate, wherein the thermistor is connected with the second type of pins; attaching an electroabsorption modulation laser chip to the upper surface of the integrated substrate, and connecting the electroabsorption modulation laser chip with a preset functional layout on the upper surface of the integrated substrate; the pipe cap is covered above the pipe seat. The manufacturing efficiency of the TO packaging structure of the refrigeration type laser is improved.
Description
Technical Field
The application belongs TO the technical field of semiconductor packaging, and particularly relates TO a TO packaging structure and a TO packaging method of a refrigeration type laser.
Background
With the continuous development of technology, the packaging technology of semiconductor lasers includes: butterfly packaging, TO (Transistor Outline, transistor housing) packaging, butterfly berk packaging, etc. The TO package refers TO a coaxial package, belongs TO a totally enclosed package, and is widely used in the package of optoelectronic devices such as lasers due TO the advantages of simple manufacturing process, low production cost, convenient and flexible use and the like.
At present, a traditional refrigeration type laser TO package adopts a COC (Chip On Carrier) mode TO manufacture the TO package, but the traditional COC method for manufacturing the refrigeration type laser TO package is complex in process and low in efficiency due TO the requirements of high heat dissipation, low resistance and high shearing strength when the Chip is combined with a product.
Disclosure of Invention
In order TO solve the technical problems of complex manufacturing procedures and low efficiency of a refrigeration type laser TO packaging structure in the related art, the embodiment of the application provides the refrigeration type laser TO packaging structure and a packaging method thereof.
The application is realized by the following technical scheme:
in a first aspect, an embodiment of the present application provides a method for packaging a TO refrigeration type laser, including:
The lower surface of the semiconductor refrigerator is attached to the first side of the tube base, and the semiconductor refrigerator is connected with a first type of pins, wherein the first type of pins penetrate through the tube base and are used for supplying power to the semiconductor refrigerator.
The lower surface of the backlight detector is attached TO the upper surface of the semiconductor refrigerator, and the backlight detector is connected with a second type of pins, wherein the second type of pins penetrate through the tube seat and are used for outputting output signals of the TO package of the refrigeration type laser.
And attaching the side surface of the integrated substrate TO the upper surface of the semiconductor refrigerator, wherein the integrated substrate is respectively connected with a second type of pins and a third type of pins, and the third type of pins penetrate through the tube seat and are used for inputting input signals of the TO package of the refrigeration type laser.
And attaching the thermistor to the upper surface of the integrated substrate, and connecting the thermistor with the second type of pins.
And attaching the electric absorption modulation laser chip to the upper surface of the integrated substrate, and connecting the electric absorption modulation laser chip with a preset functional layout on the upper surface of the integrated substrate, wherein the preset functional layout is arranged on the upper surface of the integrated substrate.
The tube cap is covered above the tube seat, wherein a cavity is formed between the tube cap and the tube seat, and the semiconductor refrigerator, the backlight detector and the integrated substrate are positioned in the cavity.
With reference to the first aspect, in some possible implementations, the integrated substrate is an aluminum nitride-based integrated substrate or a silicon-based integrated substrate; the substrate material of the aluminum nitride-based integrated substrate is aluminum nitride, and the substrate material of the silicon-based integrated substrate is silicon crystal.
With reference to the first aspect, in some possible implementations, an adhesive is applied between the first type of pins and the socket, between the second type of pins and the socket, and between the third type of pins and the socket.
With reference to the first aspect, in some possible implementations, after the cap cover is disposed over the stem, the method further includes: and performing burn-in and test operations on the pipe cap and the pipe seat.
With reference to the first aspect, in some possible implementations, a plurality of electroplating areas are disposed on the preset functional layout, the integrated substrate is respectively connected with the second type pins and the third type pins through the electroplating areas, and the electroabsorption modulation laser chip is connected with the preset functional layout through the electroplating areas, and the electroplating areas are made of gold or silver.
In a second aspect, an embodiment of the present application provides a TO package structure of a refrigeration type laser, including: the semiconductor refrigerator comprises a tube cap, a tube seat, a first type of pins, a second type of pins, a third type of pins, a semiconductor refrigerator, a backlight detector, an integrated substrate, a thermistor and an electroabsorption modulation laser chip.
The first type of pins, the second type of pins and the third type of pins penetrate through the tube seat, wherein the first type of pins are used for supplying power TO the semiconductor refrigerator, the second type of pins are used for outputting output signals of the refrigeration type laser TO package, and the third type of pins are used for inputting input signals of the refrigeration type laser TO package.
The semiconductor refrigerator is attached to the first side of the tube base, and the semiconductor refrigerator is connected with the first type of pins.
The backlight detector is attached to the upper surface of the semiconductor refrigerator and is connected with the second type of pins.
The integrated substrate is attached to the upper surface of the semiconductor refrigerator, and is respectively connected with the second type of pins and the third type of pins, wherein the side face of the integrated substrate is attached to the upper surface of the semiconductor refrigerator, and a preset functional layout is arranged on the upper surface of the integrated substrate.
The thermistor is attached to the upper surface of the integrated substrate and is connected with the second type pins.
The electric absorption modulation laser chip is attached to the upper surface of the integrated substrate and is connected with a preset functional layout.
The tube cap cover is arranged above the tube seat, a cavity is formed between the tube cap and the tube seat, and the semiconductor refrigerator, the backlight detector and the integrated substrate are positioned in the cavity.
With reference to the second aspect, in some possible implementations, the integrated substrate is an aluminum nitride-based integrated substrate or a silicon-based integrated substrate; the substrate material of the aluminum nitride-based integrated substrate is aluminum nitride, and the substrate material of the silicon-based integrated substrate is silicon crystal.
With reference to the second aspect, in some possible implementations, an adhesive is applied between the first type of pins and the socket, between the second type of pins and the socket, and between the third type of pins and the socket.
With reference to the second aspect, in some possible implementations, an electroplating area is disposed on the preset functional layout, the integrated substrate is connected to the second type of pins and the third type of pins through the electroplating area, and the electroabsorption modulation laser chip is connected to the preset functional layout through the electroplating area, where the material of the electroplating area is gold or silver.
With reference to the second aspect, in some possible implementations, the electroabsorption modulated laser chip is coated with nano-silver between the integrated substrate.
It will be appreciated that the advantages of the second aspect may be found in the relevant description of the first aspect, and will not be described in detail herein.
Compared with the prior art, the embodiment of the application has the beneficial effects that:
the application provides a simpler and more convenient manufacturing method of the refrigeration type laser TO package by simplifying the traditional COC process, thereby improving the manufacturing efficiency of the refrigeration type laser TO package.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for packaging a refrigeration type laser TO according TO an embodiment of the present application;
Fig. 2 is a schematic structural diagram of a TO package structure of a refrigeration type laser according TO an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
As used in the present description and the appended claims, the term "if" may be interpreted as "when..once" or "in response to a determination" or "in response to detection" depending on the context. Similarly, the phrase "if a determination" or "if a [ described condition or event ] is detected" may be interpreted in the context of meaning "upon determination" or "in response to determination" or "upon detection of a [ described condition or event ]" or "in response to detection of a [ described condition or event ]".
Furthermore, the terms "first," "second," "third," and the like in the description of the present specification and in the appended claims, are used for distinguishing between descriptions and not necessarily for indicating or implying a relative importance.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
With the continuous development of technology, the packaging technology of semiconductor lasers includes: butterfly packaging, TO packaging, butterfly berk packaging, etc. The TO (Transistor Outline, transistor housing) package refers TO a coaxial package, belongs TO a fully-enclosed package, and is widely used in the package of optoelectronic devices such as lasers due TO the advantages of simple manufacturing process, low production cost, convenient and flexible use, etc.
At present, a traditional refrigeration type laser TO package adopts a COC (Chip On Carrier) mode TO manufacture the TO package, but the traditional COC method for manufacturing the refrigeration type laser TO package is complex in process and low in efficiency due TO the requirements of high heat dissipation, low resistance and high shearing strength when the Chip is combined with a product.
Based on the above problems, the embodiment of the application provides a method for packaging a TO-type refrigeration laser, which simplifies the manufacturing method of the TO-type refrigeration laser, and further improves the manufacturing efficiency of the TO-type refrigeration laser.
Fig. 1 is a flow chart of a method for packaging a refrigeration type laser TO according TO an embodiment of the present application, and referring TO fig. 1, the method for packaging a refrigeration type laser TO is described in detail as follows:
In step 101, a lower surface of a semiconductor cooler (Thermal Electronic Cooler, TEC) is attached to a first side of a header and the semiconductor cooler is connected to a first type of pin, wherein the first type of pin extends through the header for powering the semiconductor cooler.
In step 102, a lower surface of a backlight detector (Monitor PD, MPD) is attached TO an upper surface of a semiconductor refrigerator, and the backlight detector is connected TO a second type of pins, where the second type of pins penetrate through the tube base, and are used for outputting an output signal of a TO package of the refrigeration type laser.
In step 103, the side surface of the integrated substrate is attached TO the upper surface of the semiconductor refrigerator, and the integrated substrate is respectively connected with the second type pins and the third type pins, wherein the third type pins penetrate through the tube base and are used for inputting input signals of the refrigeration type laser TO package.
Illustratively, the integrated substrate is an aluminum nitride-based integrated substrate or a silicon-based integrated substrate; the substrate material of the aluminum nitride-based integrated substrate is aluminum nitride, and the substrate material of the silicon-based integrated substrate is silicon crystal.
Illustratively, the adhesive is applied between the first type of pin and the header, between the second type of pin and the header, and between the third type of pin and the header.
In step 104, a thermistor is attached to the upper surface of the integrated substrate, and the thermistor is connected to the second type pins.
In step 105, an electro-absorption modulated laser chip (electro-absorption Modulated Laser, EML) is attached to the upper surface of the integrated substrate, and the electro-absorption modulated laser chip is connected to a preset functional layout of the upper surface of the integrated substrate, wherein the preset functional layout is provided on the upper surface of the integrated substrate.
The integrated substrate is respectively connected with the second type of pins and the third type of pins through the electroplating areas, and the electric absorption modulation laser chip is connected with the preset functional layout through the electroplating areas, wherein the electroplating areas are made of gold or silver.
Specifically, the preset functional layout can improve the eye diagram quality of the refrigeration type laser TO package in the application field, and the higher the eye diagram quality is, the better the application effect of the refrigeration type laser TO package is, and the better the applicability of the device is.
In step 106, a cap is placed over the header, wherein a cavity is formed between the cap and the header, and the semiconductor refrigerator, backlight detector, and integrated substrate are located in the cavity.
Illustratively, after the cap is disposed over the stem, further comprising: and performing burn-in and test operations on the pipe cap and the pipe seat.
Specifically, the burn-in and test operation specifically includes a burn-in operation for the entire package of the refrigeration type laser TO and a device test operation for the entire package of the refrigeration type laser TO. The testing operation can test the effect of the device during working, reject unqualified products and ensure the working stability of the produced device.
The method for packaging the refrigeration type laser TO simplifies the traditional COC process, provides a simpler and more convenient method for manufacturing the refrigeration type laser TO package, and further improves the manufacturing efficiency of the refrigeration type laser TO package.
Fig. 2 is a schematic structural diagram of a TO package structure of a refrigeration type laser according TO an embodiment of the present application, and referring TO fig. 2, the TO package structure of the refrigeration type laser includes: a cap 201, a stem 202, a first type of pin 203, a second type of pin 204, a third type of pin 205, a semiconductor refrigerator 206, a backlight detector 207, an integrated substrate 208, a thermistor 209, and an electro-absorption modulated laser chip 210.
The first type pin 203, the second type pin 204 and the third type pin 205 penetrate through the tube seat, wherein the first type pin 203 is used for supplying power TO the semiconductor refrigerator 206, the second type pin 204 is used for outputting an output signal of the refrigeration type laser TO package, and the third type pin 205 is used for inputting an input signal of the refrigeration type laser TO package.
Specifically, the second type pins 204 may include: a second type pin 2041, a second type pin 2042, and a second type pin 2043. The second type pins 2041, 2042, and 2043 are used to output different output signals, respectively.
The semiconductor refrigerator 206 is attached to a first side of the header 202, and the semiconductor refrigerator 206 is connected to the first type pins 203. When the positive electrode pad of the semiconductor refrigerator 206 is connected to the positive electrode of the power supply through the first type pin 203, the upper surface of the semiconductor refrigerator 206 starts to perform cooling.
The backlight detector 207 is attached to the upper surface of the semiconductor refrigerator 206, and the backlight detector 207 is connected to the second type pins 2043.
The integrated substrate 208 is attached to the upper surface of the semiconductor refrigerator 206, and the integrated substrate 208 is respectively connected with the second type pins 204 and the third type pins 205, wherein the side surface of the integrated substrate 208 is attached to the upper surface of the semiconductor refrigerator 206, and a preset functional layout is arranged on the upper surface of the integrated substrate 208. A ground region is also provided on the integrated substrate 208 for grounding the integrated substrate.
The thermistor 209 is attached to the upper surface of the integrated substrate 208, and the thermistor 209 is connected to the second type pins 2041.
The electroabsorption modulated laser chip 210 is attached to the upper surface of the integrated substrate 208, and the electroabsorption modulated laser chip 210 is connected with a preset functional layout.
The cap 201 is disposed over the stem 202, a cavity is formed between the cap 201 and the stem 202, and the semiconductor refrigerator 206, the backlight detector 207, and the integrated substrate 208 are located in the cavity.
The integrated substrate 208 is an aluminum nitride-based integrated substrate or a silicon-based integrated substrate, for example; the substrate material of the aluminum nitride-based integrated substrate is aluminum nitride, and the substrate material of the silicon-based integrated substrate is silicon crystal.
Illustratively, the adhesive is applied between the first type pins 203 and the header 202, between the second type pins 204 and the header 202, and between the third type pins 205 and the header 202.
Specifically, in order to prevent the mechanical connection between the first type pins 203, the second type pins 204, the third type pins 205 and the tube seat 202 from being loose, an anti-slip device is arranged at the place where the pins penetrate out of the tube seat, and the anti-slip device can make the pins difficult to loose.
Illustratively, an electroplating area is disposed on the preset functional layout, the integrated substrate 208 is respectively connected with the second type pins 204 and the third type pins 205 through the electroplating area, and the electro-absorption modulated laser chip 210 is connected with the preset functional layout through the electroplating area, wherein the material of the electroplating area is gold or silver.
Specifically, the plating area is a well-arranged area that facilitates electrical connection between devices.
Illustratively, the electroabsorption modulated laser chip 210 is coated with nano-silver between it and the integrated substrate 208.
Specifically, the integrated substrate 208 is further provided with a first capacitor 211 and a second capacitor 212, where the first capacitor 211 is a 100Pf capacitor, and the second capacitor 212 is a 100Pf capacitor. The first capacitor 211 and the second capacitor 212 function as filtering functions in the integrated substrate 208 for filtering out clutter interference of clutter signals to the electroabsorption modulated laser chip.
Specifically, the electroabsorption modulated laser chip 210 is further connected to the first capacitor 211 and the second capacitor 212, where the electroabsorption modulated laser chip 210 is connected to the first capacitor 211 through a thin film resistor (i.e., a hatched portion in fig. two). The temperature coefficient of the film resistor is very low, the resistance change is very small when the temperature changes, the resistance value is more stable, and the resistance value is prevented from changing greatly when the temperature of the device changes.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present application.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (10)
1. A method of refrigeration type laser TO packaging, comprising:
Attaching the lower surface of a semiconductor refrigerator to a first side of a tube seat, and connecting the semiconductor refrigerator with a first type of pins, wherein the first type of pins penetrate through the tube seat and are used for supplying power to the semiconductor refrigerator;
Attaching the lower surface of a backlight detector TO the upper surface of the semiconductor refrigerator, and connecting the backlight detector with a second type of pins, wherein the second type of pins penetrate through the tube seat and are used for outputting output signals of the TO package of the refrigeration type laser;
Attaching the side surface of an integrated substrate TO the upper surface of the semiconductor refrigerator, wherein the integrated substrate is respectively connected with the second type pins and the third type pins, and the third type pins penetrate through the tube seat and are used for inputting input signals of the refrigeration type laser TO package;
Attaching a thermistor to the upper surface of the integrated substrate, wherein the thermistor is connected with the second type pins;
attaching an electroabsorption modulation laser chip to the upper surface of the integrated substrate, and connecting the electroabsorption modulation laser chip with a preset functional layout on the upper surface of the integrated substrate, wherein the preset functional layout is arranged on the upper surface of the integrated substrate;
And a pipe cap is covered above the pipe seat, wherein a cavity is formed between the pipe cap and the pipe seat, and the semiconductor refrigerator, the backlight detector and the integrated substrate are positioned in the cavity.
2. The method of claim 1, wherein the integrated substrate is an aluminum nitride-based integrated substrate or a silicon-based integrated substrate; the substrate material of the aluminum nitride-based integrated substrate is aluminum nitride, and the substrate material of the silicon-based integrated substrate is silicon crystal.
3. A method of packaging a refrigeration type laser TO as claimed in claim 1 wherein an adhesive is applied between said first type pin and said header, between said second type pin and said header, and between said third type pin and said header.
4. The method of claim 1, further comprising, after said capping a cap over said header: and performing burn-in and test operations on the tube cap and the tube seat.
5. The method for packaging a TO-type refrigeration laser according TO claim 1, wherein a plurality of electroplating areas are arranged on the preset functional layout, the integrated substrate is respectively connected with the second type pins and the third type pins through the electroplating areas, the electro-absorption modulation laser chip is connected with the preset functional layout through the electroplating areas, and the electroplating areas are made of gold or silver.
6. A refrigeration type laser TO package structure, characterized by comprising: the semiconductor refrigerator comprises a pipe cap, a pipe seat, a first type pin, a second type pin, a third type pin, a semiconductor refrigerator, a backlight detector, an integrated substrate, a thermistor and an electroabsorption modulation laser chip;
The first type pins, the second type pins and the third type pins penetrate through the tube seat, wherein the first type pins are used for supplying power TO the semiconductor refrigerator, the second type pins are used for outputting output signals of the refrigeration type laser TO package, and the third type pins are used for inputting input signals of the refrigeration type laser TO package;
The semiconductor refrigerator is attached to the first side of the tube seat and is connected with the first type of pins;
the backlight detector is attached to the upper surface of the semiconductor refrigerator and is connected with the second type pins;
The integrated substrate is attached to the upper surface of the semiconductor refrigerator, and is respectively connected with the second type pins and the third type pins, wherein the side face of the integrated substrate is attached to the upper surface of the semiconductor refrigerator, and a preset functional layout is arranged on the upper surface of the integrated substrate;
The thermistor is attached to the upper surface of the integrated substrate and is connected with the second type pins;
The electric absorption modulation laser chip is attached to the upper surface of the integrated substrate and is connected with the preset functional layout;
the pipe cap covers the pipe seat, a cavity is formed between the pipe cap and the pipe seat, and the semiconductor refrigerator, the backlight detector and the integrated substrate are located in the cavity.
7. The TO package structure of claim 6, wherein the integrated substrate is an aluminum nitride-based integrated substrate or a silicon-based integrated substrate; the substrate material of the aluminum nitride-based integrated substrate is aluminum nitride, and the substrate material of the silicon-based integrated substrate is silicon crystal.
8. A refrigerated laser TO package as defined in claim 6, wherein an adhesive is applied between the first type of pin and the header, between the second type of pin and the header, and between the third type of pin and the header.
9. The TO package structure of claim 6, wherein an electroplating area is disposed on the preset functional layout, the integrated substrate is respectively connected with the second type pins and the third type pins through the electroplating area, and the electro-absorption modulated laser chip is connected with the preset functional layout through the electroplating area, wherein the electroplating area is made of gold or silver.
10. The refrigerated laser TO package structure of claim 6, wherein the electroabsorption modulated laser chip is coated with nano-silver between the integrated substrate.
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| CN102650718A (en) * | 2011-02-28 | 2012-08-29 | 深圳新飞通光电子技术有限公司 | Refrigeration-type coaxial packaging light-emitting tube core |
| CN104734782A (en) * | 2013-12-19 | 2015-06-24 | 华为技术有限公司 | Optical emitter assembly and assembling method thereof |
| CN105261929A (en) * | 2015-07-17 | 2016-01-20 | 武汉欧普兰光电技术股份有限公司 | Transistor outline (TO)-CAN packaged semiconductor laser and fabrication method thereof |
| CN206283097U (en) * | 2016-12-15 | 2017-06-27 | 深圳市东飞凌科技有限公司 | Electroabsorption Modulated Laser coaxial packaging tube core |
| CN112636162A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure and packaging method of semiconductor laser |
| CN112803235A (en) * | 2021-02-05 | 2021-05-14 | 广东瑞谷光网通信股份有限公司 | Coaxial packaging laser device |
| CN112968351A (en) * | 2021-04-12 | 2021-06-15 | 广东瑞谷光网通信股份有限公司 | Coaxial packaged electric absorption modulation laser device |
| CN113764971A (en) * | 2021-06-30 | 2021-12-07 | 武汉敏芯半导体股份有限公司 | Electric absorption modulation laser refrigeration packaging structure |
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