CN116779419A - Composite film and preparation method thereof - Google Patents
Composite film and preparation method thereof Download PDFInfo
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- CN116779419A CN116779419A CN202310759448.0A CN202310759448A CN116779419A CN 116779419 A CN116779419 A CN 116779419A CN 202310759448 A CN202310759448 A CN 202310759448A CN 116779419 A CN116779419 A CN 116779419A
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- ceramic substrate
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- isolation layer
- silicon
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- 239000002131 composite material Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 131
- 239000000919 ceramic Substances 0.000 claims abstract description 98
- 238000002955 isolation Methods 0.000 claims abstract description 56
- 230000007547 defect Effects 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 27
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000292 calcium oxide Substances 0.000 claims abstract description 7
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052878 cordierite Inorganic materials 0.000 claims abstract description 7
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 7
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 7
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 7
- 239000011029 spinel Substances 0.000 claims abstract description 7
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 73
- 239000010409 thin film Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 239000000969 carrier Substances 0.000 abstract description 14
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 13
- 239000002210 silicon-based material Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 163
- 238000000034 method Methods 0.000 description 26
- 238000005468 ion implantation Methods 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- -1 hydrogen ions Chemical class 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The embodiment of the application provides a composite film and a preparation method thereof, wherein the composite film comprises a ceramic substrate, an isolation layer and an active layer which are sequentially laminated; the material of the ceramic substrate comprises at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titanium dioxide, aluminum nitride, silicon dioxide, silicon nitride and silicon carbide. The ceramic substrate has the vacancy defect, so that carriers can be captured, the carriers are prevented from moving to the surface contacted with the isolation layer, further, the surface parasitic conductivity effect of the composite film is avoided, and the problem that the composite film with the substrate layer made of silicon material in the prior art is easy to generate the surface parasitic conductivity effect is solved. In addition, the price of the ceramic substrate is lower than that of a substrate layer made of silicon materials in the prior art, namely, the performance of the composite film is improved, and meanwhile, the production cost of the composite film is reduced.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a composite film and a preparation method thereof.
Background
The film material can meet the requirements of electronic components on miniaturization, low power consumption and high performance, so that the film material becomes an increasingly important material in the semiconductor industry. In recent years, a thin film material with an insulator has been attracting more and more attention in industry, which exhibits good application performance in CPU chips, memories, amplifiers, filters, modulators, and the like.
Currently, in the related art, a thin film material includes an active layer, an insulating layer, and a substrate layer sequentially disposed from top to bottom, where the active layer and the insulating layer are main functional layers to realize propagation of signals such as light, electricity, and sound.
Since many defect energy levels exist on the interface of the insulating layer close to the substrate layer, when the insulating layer is in direct contact with the substrate layer, the defect energy levels attract carriers in the substrate layer to the vicinity of the contact interface of the insulating layer and the substrate layer, so that surface parasitic conductance effects (Parasitic Surface Conductance, PSC) are generated, the effective resistivity of the substrate layer is reduced, and the overall performance of the thin film material is finally affected.
Disclosure of Invention
The embodiment of the application provides a composite film and a preparation method thereof, which are used for solving the problem that the composite film in the prior art generates surface parasitic conductance effect.
In a first aspect, an embodiment of the present application provides a composite film, including:
the ceramic substrate, the isolation layer and the active layer are sequentially laminated;
the isolation layer is used for isolating the ceramic substrate from the active layer;
the active layer is used for realizing photoelectric functions;
the material of the ceramic substrate comprises at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titanium dioxide, aluminum nitride, silicon dioxide, silicon nitride and silicon carbide.
In one possible implementation, the dielectric loss of the ceramic substrate is less than 1×10 -4 ；
And/or the ceramic substrate has a thermal expansion coefficient in the range of 3-10 x 10 -6 m/K；
And/or the thermal conductivity of the ceramic substrate is greater than 10W (mk) -1 ；
And/or the Young's modulus of the ceramic substrate is in the range of 200-500GPa;
and/or the poisson's ratio of the ceramic substrate is in the range of 0.1-0.3;
and/or the ceramic substrate has a resistivity greater than 10kohm.
In one possible implementation, the material of the isolation layer includes at least one of silicon dioxide, silicon nitride, aluminum oxide, and aluminum nitride.
In one possible implementation, the active layer includes at least one of lithium acid crystals, lithium tantalate crystals, gallium arsenide, silicon, ceramics, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystals, and quartz.
In one possible implementation, the composite film further includes a defect layer,
the ceramic substrate, the defect layer, the isolation layer and the active layer are sequentially stacked.
In one possible implementation, the defect layer has a thickness of 300nm to 5000nm.
In a second aspect, an embodiment of the present application further provides a method for preparing a composite film, for preparing a composite film according to the first aspect, including:
preparing an isolation layer on one side of a ceramic substrate;
preparing an active layer on one side of the isolation layer, which is away from the ceramic substrate, to obtain a thin film intermediate;
annealing the film intermediate to obtain the composite film.
In one possible implementation, the preparation of the isolation layer on one side of the ceramic substrate comprises:
preparing a defect layer on a ceramic substrate;
preparing an isolation layer on one side of the defect layer, which is away from the ceramic substrate;
preparing an active layer on one side of the isolation layer, which is away from the ceramic substrate, to obtain a thin film intermediate, wherein the preparation method comprises the following steps:
and preparing an active layer on one side of the isolation layer, which is opposite to the defect layer, so as to obtain a thin film intermediate.
In one possible implementation, the dielectric loss of the ceramic substrate is less than 1×10 -4 ；
And/or the ceramic substrate has a thermal expansion coefficient in the range of 3-10 x 10 -6 m/K；
And/or the thermal conductivity of the ceramic substrate is greater than 10W (mk) -1 ；
And/or the Young's modulus of the ceramic substrate is in the range of 200-500GPa;
and/or the poisson's ratio of the ceramic substrate is in the range of 0.1-0.3;
and/or the ceramic substrate has a resistivity greater than 10kohm.
The embodiment of the application provides a ceramic substrate, an isolation layer and an active layer which are sequentially laminated; the material of the ceramic substrate comprises at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titanium dioxide, aluminum nitride, silicon dioxide, silicon nitride and silicon carbide. The ceramic substrate has the vacancy defect, so that carriers can be captured, the carriers are prevented from moving to the surface contacted with the isolation layer, further, the surface parasitic conductivity effect of the composite film is avoided, and the problem that the composite film with the substrate layer made of silicon material in the prior art is easy to generate the surface parasitic conductivity effect is solved. In addition, the price of the ceramic substrate is lower than that of a substrate layer made of silicon materials in the prior art, namely, the performance of the composite film is improved, and meanwhile, the production cost of the composite film can be reduced.
The embodiment of the application also provides a preparation method of the composite film, which is used for preparing the composite film.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application.
In the drawings:
FIG. 1 is a schematic view of a composite film according to an embodiment of the present application;
FIG. 2 is a schematic view of another composite film according to an embodiment of the present application;
FIG. 3 is a flow chart of a method of preparing the composite film of FIG. 1;
FIG. 4 is a flow chart of a method of preparing the composite film of FIG. 2.
Reference numerals illustrate:
100-ceramic substrate; 200-isolating layer; 300-an active layer; 400-defect layer.
Detailed Description
In order to make the technical solution of the present application better understood by those skilled in the art, the technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
In the description of embodiments of the present application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured" and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be a mechanical connection; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature "above" and "over" a second feature may be a first feature directly above or obliquely above the second feature, or simply indicate that the first feature is higher in level than the second feature. The first feature being "under," "under" and "beneath" the second feature may be the first feature being directly under or obliquely under the second feature, or simply indicating that the first feature is less level than the second feature.
The film material can meet the requirements of electronic components on miniaturization, low power consumption and high performance, so that the film material becomes an increasingly important material in the semiconductor industry. In recent years, a thin film material with an insulator has been attracting more and more attention in industry, which exhibits good application performance in CPU chips, memories, amplifiers, filters, modulators, and the like.
Currently, in the related art, a thin film material includes an active layer, an insulating layer, and a substrate layer sequentially disposed from top to bottom, where the active layer and the insulating layer are main functional layers to realize propagation of signals such as light, electricity, and sound.
Since many defect energy levels exist on the interface of the insulating layer close to the substrate layer, when the insulating layer is in direct contact with the substrate layer, the defect energy levels attract carriers in the substrate layer to the vicinity of the contact interface of the insulating layer and the substrate layer, so that surface parasitic conductance effects (Parasitic Surface Conductance, PSC) are generated, the effective resistivity of the substrate layer is reduced, and the overall performance of the thin film material is finally affected.
In order to solve the above problems, the following will describe in detail the solution provided by the embodiments of the present application with reference to the drawings attached to the specification.
FIG. 1 is a schematic structural diagram of a composite film according to an embodiment of the present application.
Referring to fig. 1, in a first aspect, an embodiment of the present application provides a composite film, including: the ceramic substrate 100, the isolation layer 200, and the active layer 300 are sequentially stacked. Illustratively, the isolation layer 200 is prepared on a side of the ceramic substrate 100, and the active layer 300 is prepared on a side of the isolation layer 200 facing away from the ceramic substrate 100.
Wherein the isolation layer 200 is for isolating the ceramic substrate 100 from the active layer 300; the active layer 300 is used to implement an optoelectronic function, such as propagation of signals of light, electricity, and sound.
The material of the ceramic substrate 100 may include at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titania, aluminum nitride, silica, silicon nitride and silicon carbide. Because the substrate layer made of the material has vacancy defects, the capability of capturing carriers is further achieved, carriers are prevented from moving to the surface in contact with the isolation layer, and further surface parasitic conductivity effects of the composite film are avoided, and the problem that the composite film with the substrate layer made of the silicon material in the prior art is prone to surface parasitic conductivity effects is solved. In addition, the price of the ceramic substrate is lower than that of a substrate layer made of silicon materials in the prior art, namely, the performance of the composite film is improved, and meanwhile, the production cost of the composite film can be reduced.
Illustratively, the material of the isolation layer 200 may include at least one of silicon dioxide, silicon nitride, aluminum oxide, and aluminum nitride. The material of the active layer 300 includes at least one of lithium niobate crystal, lithium tantalate crystal, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystal, and quartz.
In order to demonstrate the excellent performance of the composite films of the present application, a control test was performed.
The test results are shown in the following table.
As can be seen from the above table, when the material and thickness of the isolation layer 200 and the active layer 300 are the same and the thicknesses of the silicon substrate layer and the ceramic substrate 100 are the same, the effective resistivity 10000ohm.cm of the composite film of the ceramic substrate 100 is far greater than the effective resistivity 1000ohm.cm of the composite film of the silicon substrate layer, so that it can be explained that the ceramic substrate 100 can avoid generating surface parasitic conductance effect in the composite film and avoid reducing the effective resistivity of the composite film.
In another aspect, the embodiment of the present application provides the ceramic substrate 100, the isolation layer 200, and the active layer 300 that are sequentially stacked; the material of the ceramic substrate 100 includes at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titania, aluminum nitride, silica, silicon nitride and silicon carbide. Because the ceramic substrate 100 has the vacancy defect, carriers can be captured, and the carriers are prevented from moving to the surface contacted with the isolation layer 200, so that the surface parasitic conductivity effect of the composite film is avoided, and the problem that the composite film with the substrate layer made of silicon material in the prior art is easy to generate the surface parasitic conductivity effect is solved. In addition, the ceramic substrate 100 of the present application has a lower price than the substrate layer made of silicon in the prior art, i.e., the production cost of the composite film is reduced while improving the performance of the composite film.
In some examples, the ceramic substrate 100 may have a coefficient of thermal expansion in the range of 3-10 x 10 -6 m/K; and/or the thermal conductivity of the ceramic substrate 100 is greater than 10W (mk) -1 The method comprises the steps of carrying out a first treatment on the surface of the And/or, the Young's modulus of the ceramic substrate 100 may range from 200 GPa to 500GPa;
and/or, the poisson's ratio of the ceramic substrate 100 may range from 0.1 to 0.3; and/or the resistivity of the ceramic substrate 100 is greater than 10kohm. Specifically, in the embodiment of the present application, the dielectric loss of the ceramic substrate 100 is less than 1×10 -4 The method comprises the steps of carrying out a first treatment on the surface of the Coefficient of thermal expansion of 7.7 x 10 -6 m/K; thermal conductivity24W (mk) -1 The method comprises the steps of carrying out a first treatment on the surface of the Young's modulus of 398GPa; the poisson's ratio is 0.27 and the resistivity of the ceramic substrate 100 is greater than 10kohm cm.
FIG. 2 is a schematic structural view of another composite film according to an embodiment of the present application.
Referring to fig. 2, in some examples, the composite film further includes a defect layer 400. The ceramic substrate 100, the defect layer 400, the isolation layer 200, and the active layer 300 are sequentially stacked. Illustratively, the defect layer 400 is prepared on a side of the ceramic substrate 100, the isolation layer 200 is prepared on a side of the defect layer 400 facing away from the ceramic substrate 100, and the active layer 300 is prepared on a side of the isolation layer 200 facing away from the defect layer 400. In addition, the thickness of the defect layer 400 may be 300nm to 5000nm, and the thickness of the defect layer 400 may be 1000nm, for example.
The defect layer 400 has lattice defects with a certain density, and can further capture carriers existing between the isolation layer 200 and the ceramic substrate 100, so as to avoid the aggregation of the carriers, thereby avoiding the reduction of the loss of the composite film.
FIG. 3 is a flow chart of a method of preparing the composite film of FIG. 1.
Referring to fig. 3, in a second aspect, an embodiment of the present application further provides a method for preparing a composite film, for preparing a composite film according to the first aspect, including:
s100: the ceramic substrate 100 is prepared. The material of the ceramic substrate 100 may include at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titania, aluminum nitride, silica, silicon nitride, and silicon carbide. The dielectric loss of the ceramic substrate 100 is less than 1 x 10 -4 The method comprises the steps of carrying out a first treatment on the surface of the Coefficient of thermal expansion of 7.7 x 10 -6 The method comprises the steps of carrying out a first treatment on the surface of the Thermal conductivity 24W (mk) -1 The method comprises the steps of carrying out a first treatment on the surface of the Young's modulus 398; poisson's ratio was 0.27.
S200: an isolation layer 200 is prepared on one side of the ceramic substrate 100.
The isolation layer 200 may be prepared by a deposition method or a thermal oxidation method, and the isolation layer 200 may be made of at least one of silicon dioxide, silicon oxynitride or silicon nitride. When the isolation layer 200 is prepared on the ceramic substrate 100 using a deposition method, the deposition manner is not limited, and may be Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), magnetron sputtering, or the like. For example, the thickness of the isolation layer 200 prepared by the deposition method may be 200nm to 3000nm, and the thickness of the isolation layer 200 in the aspect of the present application may be 1000nm.
When the isolation layer 200 is prepared on the ceramic substrate 100 by oxidation, a polysilicon layer may be prepared on one side of the ceramic substrate 100, and then the polysilicon layer may be subjected to oxidation treatment, wherein the side of the polysilicon layer away from the ceramic substrate 100 is oxidized to form a silicon dioxide layer, i.e., the isolation layer 200 is formed, and the side of the polysilicon layer close to the substrate is not oxidized. Illustratively, the oxidation temperature is 900 ℃ to 1000 ℃. Illustratively, the oxidation temperature in the present application may be 940 ℃.
S300: an active layer 300 is prepared on the side of the isolation layer 200 facing away from the ceramic substrate 100, resulting in a thin film intermediate.
The thin film layer, i.e., the active layer 300, is illustratively prepared by an ion implantation method as well as a bonding method. Specifically, ion implantation is performed on the thin film substrate, wherein the ion implantation surface is a bonding surface, in other words, the ion implantation surface is a side of the thin film substrate on which the thin film layer is formed after ion implantation.
By way of example, a film matrix is meant a base material having a thickness for obtaining a film layer. The thin film substrate may be at least one of lithium niobate crystal, lithium tantalate crystal, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystal, and quartz.
In addition, in the process of manufacturing the thin film layer, first, ion implantation is performed from one surface of the thin film substrate toward the inside of the thin film substrate, thereby forming a thin film layer, an implanted layer, and a residual layer on the thin film substrate.
The ion implantation method in the embodiment of the present application is not particularly limited, and any ion implantation method in the prior art may be used, but the implanted ions may be ions capable of generating gas by heat treatment, for example: hydrogen ions, helium ions, nitrogen ions, oxygen ions, or argon ions.
Exemplary, the ion implanted ions may be hydrogenThe implantation dose can be 3×10 when implanting hydrogen ions 16 ions/cm 2 -8×10 16 ions/cm 2 The implant energy may range from 100KeV to 400KeV. In some examples, the implantation dose of hydrogen ions is 4×10 16 ions/cm 2 The implantation energy was 180KeV.
Exemplary, the ion implanted ions may be helium ions, and the implantation dose may be 1×10 when implanting helium ions 16 ions/cm 2 -1×10 17 ions/cm 2 The implant energy may be 50KeV-1000KeV. In some embodiments, the implantation dose of helium ions is 4X 10 16 ions/cm 2 The implantation energy was 200KeV.
The thickness of the thin film layer may be adjusted by adjusting the ion implantation depth. The greater the depth of ion implantation, the greater the thickness of the prepared thin film layer; conversely, the smaller the depth of ion implantation, the smaller the thickness of the thin film layer prepared. In addition, the diffusion width of the ion implantation layer can be adjusted by adjusting the ion implantation dosage. The larger the ion implantation dose, the wider the diffusion width of the ion implantation layer; conversely, the smaller the dose of ion implantation, the narrower the diffusion width of the ion implantation layer.
After the ion implantation of the thin film substrate is completed, the surface (bonding surface) of the thin film substrate on the ion implantation side and the surface (bonding surface) of the isolation layer 200 on the side facing away from the ceramic substrate 100 are bonded. The bonding method of the film substrate and the isolation layer 200 is not particularly limited, and any bonding method of the film substrate and the isolation layer 200 in the prior art may be adopted, for example, the bonding surfaces of the film substrate and the isolation layer 200 are respectively subjected to surface activation, and then the two activated bonding surfaces are bonded to obtain a bonded body, namely, a film intermediate.
Illustratively, the bonding surfaces of the separator 200 and the film substrate are first cleaned, and then the cleaned film substrate and the separator 200 are bonded together by a plasma bonding method to form a bonded body. That is, the thin film layer in the thin film matrix is bonded with the silicon oxide layer in the isolation layer 200 to form a bonded body, i.e., a thin film intermediate.
Finally, the bond is heated and incubated to fracture the implanted layer, the remaining layers are separated from the bond, and the thin film layer remains on the spacer 200. Illustratively, the bond is heat treated, and the annealing temperature of the heat treatment may be 180 ℃ to 600 ℃. In addition, the heat treatment process comprises two annealing steps, namely a first annealing step and a second annealing step. Wherein, the annealing temperature ranges from 180 ℃ to 300 ℃, and the temperature in the scheme of the application can be 230 ℃ for the purpose of stripping off the residual layer so as to separate the film layer from the residual layer; the temperature of the second annealing is in the range of 300-600 ℃, and in the scheme of the application, the temperature is 430 ℃, so as to eliminate implantation damage. The heat treatment time during annealing of the bond may be 1 to 100 hours, and by way of example, the heat treatment time in the present embodiment may be 50 hours.
During the heat treatment, bubbles are formed in the implanted layer, for example, hydrogen ions form hydrogen gas and helium ions form helium gas. As the heat treatment progresses, the bubbles in the implanted layer are connected together and finally split from the implanted layer, the residual layer is peeled off from the bond, and the thin film layer remains on the spacer layer 200. Finally polishing and thinning the film layer to 50-3000 nm to obtain the composite film. By way of example, the thin film layer may be polished down to 400nm.
FIG. 4 is a flow chart of a method of preparing the composite film of FIG. 2.
Referring to fig. 3, in a third aspect, an embodiment of the present application further provides a method for preparing a composite film including a defect layer 400, including:
s100: the ceramic substrate 100 is prepared.
S500: a defect layer 400 is prepared on the ceramic substrate 100.
S200: the isolation layer 200 is prepared on the side of the defect layer 400 facing away from the ceramic substrate 100.
S300: the active layer 300 is prepared on the side of the isolation layer 200 facing away from the defect layer 400, resulting in a thin film intermediate.
S400: and annealing the film intermediate to obtain the composite film.
In this embodiment, the step S500 is performed after the step S100 is completed, as compared with the preparation method of the composite film in the above embodiment: preparing a defect layer 400 on the ceramic substrate 100; then, the isolation layer 200 is prepared on the defect layer 400.
Illustratively, the material of the defect layer 400 is at least one of polysilicon, amorphous silicon, or poly-germanium. The defect layer 400 may be formed by depositing polycrystalline silicon by a deposition method, depositing amorphous silicon by a deposition method, depositing polycrystalline germanium by a deposition method, etching the ceramic substrate 100 by an etching method, or causing implant damage to the ceramic substrate 100 by an implantation method. Then, a deposition method or an oxidation method is used to manufacture the isolation layer 200 on the defect layer 400, and the isolation layer 200 is made of at least one of silicon dioxide, silicon oxynitride or silicon nitride.
Wherein, the defect layer 400 has lattice defects with a certain density, which can further capture carriers existing between the isolation layer 200 and the ceramic substrate 100, avoid the aggregation of the carriers, and reduce the loss of the composite film. Illustratively, the defect layer 400 may have a thickness of 300nm to 5000nm.
It is to be understood that, based on the several embodiments provided in the present application, those skilled in the art may combine, split, reorganize, etc. the embodiments of the present application to obtain other embodiments, which all do not exceed the protection scope of the present application.
The foregoing detailed description of the embodiments of the present application further illustrates the purposes, technical solutions and advantageous effects of the embodiments of the present application, and it should be understood that the foregoing is merely a specific implementation of the embodiments of the present application, and is not intended to limit the scope of the embodiments of the present application, and any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the embodiments of the present application should be included in the scope of the embodiments of the present application.
Claims (9)
1. A composite film, comprising:
a ceramic substrate (100), an isolation layer (200), and an active layer (300) which are laminated in this order;
the isolation layer (200) is used for isolating the ceramic substrate (100) from the active layer (300);
the active layer (300) is used for realizing a photoelectric function;
the material of the ceramic substrate (100) comprises at least one of spinel, alumina, magnesia, mullite, cordierite, calcium oxide, titanium dioxide, aluminum nitride, silicon dioxide, silicon nitride and silicon carbide.
2. The composite film according to claim 1, wherein the dielectric loss of the ceramic substrate (100) is less than 1 x 10 -4 ；
And/or the ceramic substrate (100) has a thermal expansion coefficient in the range of 3-10 x 10 -6 m/K；
And/or the ceramic substrate (100) has a thermal conductivity greater than 10W (mk) -1 ；
And/or the ceramic substrate (100) has a Young's modulus in the range of 200-500GPa;
and/or, the poisson's ratio of the ceramic substrate (100) is in the range of 0.1 to 0.3;
and/or the ceramic substrate (100) has a resistivity of greater than 10kohm.
3. The composite film according to claim 1 or 2, wherein the material of the isolation layer (200) comprises at least one of silicon dioxide, silicon nitride, aluminum oxide and aluminum nitride.
4. The composite film according to claim 1 or 2, wherein the active layer (300) includes at least one of a lithium acid crystal, a lithium tantalate crystal, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystal, and quartz.
5. The composite film of claim 1, further comprising a defect layer (400),
the ceramic substrate (100), the defect layer (400), the isolation layer (200), and the active layer (300) are sequentially stacked.
6. The composite film according to claim 5, wherein the defect layer (400) has a thickness of 300nm to 5000nm.
7. A method for producing a composite film according to any one of claims 1 to 6, comprising:
preparing an isolation layer (200) on one side of a ceramic substrate (100);
preparing an active layer (300) on one side of the isolation layer (200) facing away from the ceramic substrate (100) to obtain a thin film intermediate;
annealing the film intermediate to obtain the composite film.
8. The method of manufacturing a composite film according to claim 7, wherein the manufacturing of the spacer layer (200) on one side of the ceramic substrate (100) includes:
preparing a defect layer (400) on the ceramic substrate (100);
preparing the isolation layer (200) on a side of the defect layer (400) facing away from the ceramic substrate (100);
the preparation of the active layer (300) on the side of the isolation layer (200) facing away from the ceramic substrate (100) results in a thin film intermediate comprising:
and preparing the active layer (300) on the side of the isolation layer (200) facing away from the defect layer (400) to obtain the thin film intermediate.
9. The method for producing a composite film according to claim 8, wherein,
the dielectric loss of the ceramic substrate (100) is less than 1 x 10 -4 ；
And/or the ceramic substrate (100) has a thermal expansion coefficient in the range of 3-10 x 10 -6 m/K；
And/or the ceramic substrate (100) has a thermal conductivity greater than 10W (mk) -1 ；
And/or the ceramic substrate (100) has a Young's modulus in the range of 200-500GPa;
and/or, the poisson's ratio of the ceramic substrate (100) is in the range of 0.1 to 0.3;
and/or the ceramic substrate (100) has a resistivity of greater than 10kohm.
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