CN116682876A - Composite film and preparation method thereof - Google Patents
Composite film and preparation method thereof Download PDFInfo
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- CN116682876A CN116682876A CN202310759478.1A CN202310759478A CN116682876A CN 116682876 A CN116682876 A CN 116682876A CN 202310759478 A CN202310759478 A CN 202310759478A CN 116682876 A CN116682876 A CN 116682876A
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- 239000002131 composite material Substances 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000000463 material Substances 0.000 claims abstract description 64
- 238000002955 isolation Methods 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 77
- 239000010409 thin film Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 18
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 230000003071 parasitic effect Effects 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 11
- 239000002210 silicon-based material Substances 0.000 abstract description 11
- 229920005591 polysilicon Polymers 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- 239000000969 carrier Substances 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 184
- 238000005468 ion implantation Methods 0.000 description 19
- -1 hydrogen ions Chemical class 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000002513 implantation Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Element Separation (AREA)
Abstract
The embodiment of the application provides a composite film and a preparation method thereof, wherein the composite film comprises the following steps: a substrate layer, an isolation layer and an active layer which are sequentially laminated; wherein the substrate layer is made of polycrystalline material and/or amorphous material. Firstly, compared with a substrate layer made of silicon materials in a composite film in the prior art, the preparation process of the composite film does not need the steps of purifying the silicon materials, cleaning the silicon substrate in multiple steps, manufacturing a defect layer by a polysilicon growth process and the like, so that the preparation process of the composite film is greatly simplified; secondly, vacancy defects exist in the substrate layer of the polycrystalline material or the amorphous material, and the vacancy defects can capture carriers, so that parasitic conductive effect in the composite film can be avoided, and loss is reduced; furthermore, the price of polycrystalline or amorphous materials is much lower than that of silicon materials, about 1/3 of that; therefore, the composite film with the substrate layer made of the polycrystalline material or the amorphous material can greatly reduce the cost on the premise of ensuring the performance.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a composite film and a preparation method thereof.
Background
The film material can meet the requirements of electronic components on miniaturization, low power consumption and high performance, so that the film material becomes an increasingly important material in the semiconductor industry. In recent years, a thin film material with an insulator has been attracting more and more attention in industry, which exhibits good application performance in CPU chips, memories, amplifiers, filters, modulators, and the like.
Currently, in the related art, a thin film material includes a substrate layer in which an active layer, an insulating layer, a defect layer, and a silicon material are sequentially disposed from top to bottom. The active layer and the insulating layer are main functional layers to realize the propagation of signals such as light, electricity, sound and the like. Since many defect energy levels exist on the interface of the insulating layer close to the substrate layer, when the insulating layer is in direct contact with the substrate layer, the defect energy levels attract carriers in the substrate layer to the vicinity of the contact interface of the insulating layer and the substrate layer, so that surface parasitic conductance effects (Parasitic Surface Conductance, PSC) are generated on the substrate layer, the effective resistivity of the substrate layer is changed, and the overall performance of the film material is finally affected, the defect layer is used for separating the insulating layer from the substrate layer made of silicon, and the surface parasitic conductance effects on the surface of the substrate layer are avoided.
However, the manufacturing process of the composite film is complicated, and the manufacturing cost is high.
Disclosure of Invention
The embodiment of the application provides a composite film and a preparation method thereof, which are used for solving the problems of complex manufacturing process and high cost of the composite film in the prior art.
In a first aspect, an embodiment of the present application provides a composite film, including:
a substrate layer, an isolation layer and an active layer which are sequentially laminated;
the isolation layer is used for isolating the substrate layer from the active layer;
the active layer is used for realizing photoelectric functions;
the substrate layer may be made of polycrystalline material and/or amorphous material.
In one possible implementation, the polycrystalline material comprises at least one of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon carbide, polycrystalline silicon nitride, polycrystalline quartz, polycrystalline sapphire, polycrystalline gallium nitride, polycrystalline gallium arsenide, and polycrystalline aluminum nitride.
In one possible implementation, the amorphous material includes at least one of amorphous silicon, amorphous germanium, amorphous silicon carbide, amorphous silicon nitride, amorphous quartz, amorphous sapphire, amorphous gallium nitride, amorphous gallium arsenide, and amorphous aluminum nitride.
In one possible implementation, the resistivity of the substrate layer is greater than 2kohm.
In one possible implementation, the surface roughness of the substrate layer is less than 0.5nm.
In one possible implementation, the thickness of the substrate layer is 300nm-5000nm.
In a second aspect, an embodiment of the present application further provides a method for preparing a composite film, for preparing the composite film of the first aspect, including:
cutting, grinding and polishing the polycrystalline rod body or the amorphous rod body to obtain a substrate layer;
preparing an isolation layer on one side of the substrate layer;
preparing an active layer on one side of the isolation layer, which is away from the substrate layer, to obtain a thin film intermediate;
and (5) annealing the film intermediate to obtain the composite film.
In one possible implementation, the polycrystalline rod comprises at least one of polysilicon, polycrystalline germanium, polycrystalline silicon carbide, polycrystalline silicon nitride, polycrystalline quartz, polycrystalline sapphire, polycrystalline gallium nitride, polycrystalline gallium arsenide, and polycrystalline aluminum nitride.
In one possible implementation, the amorphous rod body comprises at least one of amorphous silicon, amorphous germanium, amorphous silicon carbide, amorphous silicon nitride, amorphous quartz, amorphous sapphire, amorphous gallium nitride, amorphous gallium arsenide, and amorphous aluminum nitride.
In one possible implementation, the preparation method further includes:
and cutting, grinding and polishing the polycrystalline rod body to obtain a substrate layer, and implanting ions into the substrate layer after the step of obtaining the substrate layer is completed.
In one possible implementation, the ions include at least one of hydrogen ions and oxygen ions.
The embodiment of the application provides a composite film, which comprises the following components: a substrate layer, an isolation layer and an active layer which are sequentially laminated; the isolation layer is used for isolating the substrate layer from the active layer; the active layer is used for realizing photoelectric functions. And the substrate layer is made of polycrystalline material or amorphous material. First, compared with the substrate layer made of silicon in the composite film in the prior art, the substrate layer in the application is made of polycrystalline or amorphous material. When the substrate layer of polycrystalline material or amorphous material is used, steps such as silicon material purification, silicon substrate multi-step cleaning, defect layer manufacturing by a polycrystalline silicon growth process and the like are not needed in the process of preparing the composite film, so that the preparation process of the composite film is greatly simplified; secondly, vacancy defects exist in the substrate layer of the polycrystalline or amorphous material, so that carriers can be captured, parasitic conductive effect in the composite film can be avoided under the condition that a defect layer is not required to be prepared, and the effective resistivity is reduced; namely, the production cost of the composite film can be reduced, and meanwhile, the loss in the composite film can be reduced; furthermore, the price of polycrystalline or amorphous materials is much lower than that of silicon materials, about 1/3 of that; therefore, the composite film with the substrate layer made of polycrystalline material or amorphous material can greatly reduce the cost on the premise of ensuring the performance.
The embodiment of the application also provides a preparation method of the composite film, which is used for preparing the composite film.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application.
In the drawings:
FIG. 1 is a schematic view of a composite film according to an embodiment of the present application;
FIG. 2 is a flow chart of a method of preparing the composite film of FIG. 1;
FIG. 3 is a flow chart of another method of preparing the composite film of FIG. 1.
Reference numerals illustrate:
100-substrate layers; 200-isolating layer; 300-active layer.
Detailed Description
In order to make the technical solution of the present application better understood by those skilled in the art, the technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
In the description of embodiments of the present application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured" and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be a mechanical connection; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature "above" and "over" a second feature may be a first feature directly above or obliquely above the second feature, or simply indicate that the first feature is higher in level than the second feature. The first feature being "under," "under" and "beneath" the second feature may be the first feature being directly under or obliquely under the second feature, or simply indicating that the first feature is less level than the second feature.
The film material can meet the requirements of electronic components on miniaturization, low power consumption and high performance, so that the film material becomes an increasingly important material in the semiconductor industry. In recent years, a thin film material with an insulator has been attracting more and more attention in industry, which exhibits good application performance in CPU chips, memories, amplifiers, filters, modulators, and the like.
Currently, in the related art, a thin film material includes a substrate layer in which an active layer, an insulating layer, a defect layer, and a silicon material are sequentially disposed from top to bottom. The active layer and the insulating layer are main functional layers to realize the propagation of signals such as light, electricity, sound and the like. Since many defect energy levels exist on the interface of the insulating layer close to the substrate layer, when the insulating layer is in direct contact with the substrate layer, the defect energy levels attract carriers in the substrate layer to the vicinity of the contact interface of the insulating layer and the substrate layer, so that surface parasitic conductance effects (Parasitic Surface Conductance, PSC) are generated on the substrate layer, the effective resistivity of the substrate layer is changed, and the overall performance of the film material is finally affected, the defect layer is used for separating the insulating layer from the substrate layer made of silicon, and the surface parasitic conductance effects on the surface of the substrate layer are avoided.
In the prior art, when the composite film is manufactured, a substrate layer made of silicon material is firstly prepared. When preparing a substrate layer made of silicon, carrying out extraction treatment; in order to avoid surface parasitic conductance effects in the composite film, a defect layer needs to be prepared on the substrate layer through a polysilicon growth process. The composite film has the advantages of complex manufacturing process and high manufacturing cost.
In order to solve the problems, the embodiment of the application provides a composite film and a preparation method thereof. The following will describe in detail the schemes provided by the embodiments of the present application in connection with the accompanying drawings of the specification.
FIG. 1 is a schematic structural diagram of a composite film according to an embodiment of the present application.
Referring to fig. 1, in a first aspect, an embodiment of the present application provides a composite film. The composite film includes a substrate layer 100, an isolation layer 200, and an active layer 300. The isolation layer 200 serves to isolate the substrate layer 100 from the active layer 300; the active layer 300 is used to implement the photovoltaic function.
The substrate layer 100, the isolation layer 200, and the active layer 300 are all 3-6 inches in size and are stacked one on top of the other. Specifically, the isolation layer 200 is disposed on a side of the substrate layer 100, and the active layer 300 is disposed on a side of the isolation layer 200 facing away from the substrate layer 100.
Illustratively, the material of the isolation layer 200 includes at least one of silicon dioxide, silicon nitride, aluminum oxide, and aluminum nitride. The material of the active layer 300 includes at least one of lithium niobate crystal, lithium tantalate crystal, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystal, and quartz.
The material of the substrate layer 100 includes a polycrystalline material or an amorphous material. Illustratively, the polycrystalline material comprises at least one of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon carbide, polycrystalline silicon nitride, polycrystalline quartz, polycrystalline sapphire, polycrystalline gallium nitride, polycrystalline gallium arsenide, and polycrystalline aluminum nitride; the amorphous material includes at least one of amorphous silicon, amorphous germanium, amorphous silicon carbide, amorphous silicon nitride, amorphous quartz, amorphous sapphire, amorphous gallium nitride, amorphous gallium arsenide, and amorphous aluminum nitride.
Because the substrate layer made of the material has vacancy defects, the capability of capturing carriers is further provided, and surface parasitic conductivity effects in the composite film are avoided. In addition, the price of polycrystalline or amorphous materials is much lower than that of silicon materials, about 1/3 of that; therefore, the composite film with the substrate layer made of polycrystalline material or amorphous material can improve the performance and greatly reduce the cost.
In order to demonstrate the excellent performance of the composite films of the present application, a control test was performed. The test results are shown in the following table.
As can be seen from the above table, when the material and thickness of the isolation layer 200 and the active layer 300 are the same and the thickness of the substrate layer 100 is the same, the effective resistivity 10000ohm cm of the composite film of the substrate layer 100 made of polysilicon is far greater than 2000ohm cm of the composite film of the substrate layer 100 made of silicon, so that it can be explained that the substrate layer 100 made of polysilicon can avoid the surface parasitic conductance effect in the composite film and avoid reducing the effective resistivity of the composite film.
In another aspect, embodiments of the present application provide a composite film comprising: a substrate layer 100, an isolation layer 200, and an active layer 300 stacked in this order; the substrate layer 100 is made of a polycrystalline material or an amorphous material. First, compared to the substrate layer 100 made of silicon in the composite film of the prior art, the substrate layer 100 in the present application is made of polycrystalline or amorphous material. When the substrate layer 100 of polycrystalline material or amorphous material is used, steps such as purifying silicon materials, cleaning the silicon substrate in multiple steps, manufacturing a defect layer by a polycrystalline silicon growth process and the like are not needed in the process of preparing the composite film, so that the preparation process of the composite film is greatly simplified; secondly, vacancy defects exist in the substrate layer 100 of polycrystalline or amorphous materials, which can capture carriers, and parasitic conductive effect in the composite film can be avoided and effective resistivity is reduced under the condition that a defect layer is not required to be prepared; namely, the production cost of the composite film can be reduced, and meanwhile, the loss in the composite film can be reduced; furthermore, the price of polycrystalline or amorphous materials is much lower than that of silicon materials, about 1/3 of that; therefore, the composite film with the polycrystalline material or amorphous material substrate layer 100 can greatly reduce the cost on the premise of ensuring the performance.
In some examples, the resistivity of the substrate layer 100 is greater than 2 kohm; the surface roughness of the substrate layer 100 is less than 0.5nm; the thickness of the substrate layer 100 is 300nm-5000nm.
FIG. 2 is a flow chart of a method of preparing the composite film of FIG. 1.
Referring to fig. 2, in a second aspect, an embodiment of the present application further provides a method for preparing a composite film, for preparing the composite film of the first aspect, including:
s100: the polycrystalline rod or amorphous rod is cut, polished, and the substrate layer 100 is obtained. The polycrystalline rod means a rod made of polycrystalline material, and the amorphous rod means a rod made of amorphous material. Specifically, the substrate layer 100 is obtained by performing cutting and polishing treatment on a polycrystalline rod body, and the polycrystalline rod body may be made of at least one of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon carbide, polycrystalline silicon nitride, polycrystalline quartz, polycrystalline sapphire, polycrystalline gallium nitride, polycrystalline gallium arsenide, and polycrystalline aluminum nitride. The substrate layer 100 is obtained by cutting, grinding and polishing an amorphous rod body, and the amorphous rod body can be at least one of amorphous silicon, amorphous germanium, amorphous silicon carbide, amorphous silicon nitride, amorphous quartz, amorphous sapphire, amorphous gallium nitride, amorphous gallium arsenide and amorphous aluminum nitride.
S200: an isolation layer 200 is prepared on one side of the substrate layer 100.
The isolation layer 200 may be prepared by a deposition method or a thermal oxidation method, and the isolation layer 200 may be made of at least one of silicon dioxide, silicon oxynitride or silicon nitride. When the isolation layer 200 is prepared on the substrate layer 100 using a deposition method, a deposition manner is not limited, and may be Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), magnetron sputtering, or the like. For example, the thickness of the isolation layer 200 prepared by the deposition method may be 200nm to 3000nm, and the thickness of the isolation layer 200 in the aspect of the present application may be 1000nm.
When the isolation layer 200 is formed on the substrate layer 100 by oxidation, the polysilicon layer on the substrate layer 100 may be subjected to oxidation treatment, wherein the side of the polysilicon layer away from the substrate layer 100 is oxidized to form a silicon dioxide layer, i.e., the isolation layer 200 is formed, and the side of the polysilicon layer close to the substrate is not oxidized. Illustratively, the oxidation temperature is 900 ℃ to 1000 ℃. Illustratively, the oxidation temperature in the present application may be 940 ℃.
S300: an active layer 300 is prepared on the side of the isolation layer 200 facing away from the substrate layer 100, resulting in a thin film intermediate.
The thin film layer, i.e., the active layer 300, is illustratively prepared by an ion implantation method as well as a bonding method. Specifically, ion implantation is performed on the thin film substrate, wherein the ion implantation surface is a bonding surface, in other words, the ion implantation surface is a side of the thin film substrate on which the thin film layer is formed after ion implantation.
By way of example, a film matrix is meant a base material having a thickness for obtaining a film layer. The thin film substrate may be at least one of lithium niobate crystal, lithium tantalate crystal, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate crystal, and quartz.
In addition, in the process of manufacturing the thin film layer, first, ion implantation is performed from one surface of the thin film substrate toward the inside of the thin film substrate, thereby forming a thin film layer, an implanted layer, and a residual layer on the thin film substrate.
The ion implantation method in the embodiment of the present application is not particularly limited, and any ion implantation method in the prior art may be used, but the implanted ions may be ions capable of generating gas by heat treatment, for example: hydrogen ions, helium ions, nitrogen ions, oxygen ions, or argon ions.
Exemplary, the ion implanted may be hydrogen ions, and the implantation dose may be in the range of 3×10 when implanting hydrogen ions 16 ions/cm 2 -8×10 16 ions/cm 2 The implant energy may range from 100KeV to 400KeV. In some examples, the implantation dose of hydrogen ions is 4×10 16 ions/cm 2 The implantation energy was 180KeV.
Exemplary, the ion implanted ions may be helium ions, and the implantation dose may be 1×10 when implanting helium ions 16 ions/cm 2 -1×10 17 ions/cm 2 The implant energy may be 50KeV-1000KeV. In some embodiments, the implantation dose of helium ions is 4X 10 16 ions/cm 2 The implantation energy was 200KeV.
The thickness of the thin film layer may be adjusted by adjusting the ion implantation depth. The greater the depth of ion implantation, the greater the thickness of the prepared thin film layer; conversely, the smaller the depth of ion implantation, the smaller the thickness of the thin film layer prepared. In addition, the diffusion width of the ion implantation layer can be adjusted by adjusting the ion implantation dosage. The larger the ion implantation dose, the wider the diffusion width of the ion implantation layer; conversely, the smaller the dose of ion implantation, the narrower the diffusion width of the ion implantation layer.
After the ion implantation of the thin film substrate is completed, the surface (bonding surface) of the thin film substrate on the ion implantation side and the surface (bonding surface) of the isolation layer 200 on the side facing away from the substrate layer 100 are bonded. The bonding method of the film substrate and the isolation layer 200 is not particularly limited, and any bonding method of the film substrate and the isolation layer 200 in the prior art may be adopted, for example, the bonding surfaces of the film substrate and the isolation layer 200 are respectively subjected to surface activation, and then the two activated bonding surfaces are bonded to obtain a bonded body, namely, a film intermediate.
Illustratively, the bonding surfaces of the separator 200 and the film substrate are first cleaned, and then the cleaned film substrate and the separator 200 are bonded together by a plasma bonding method to form a bonded body. That is, the thin film layer in the thin film matrix is bonded with the silicon oxide layer in the isolation layer 200 to form a bonded body, i.e., a thin film intermediate.
Finally, the bond is heated and incubated to fracture the implanted layer, the remaining layers are separated from the bond, and the thin film layer remains on the spacer 200. Illustratively, the bond is heat treated, and the annealing temperature of the heat treatment may be 180 ℃ to 600 ℃. In addition, the heat treatment process comprises two annealing steps, namely a first annealing step and a second annealing step. Wherein, the annealing temperature ranges from 180 ℃ to 300 ℃, and the temperature in the scheme of the application can be 230 ℃ for the purpose of stripping off the residual layer so as to separate the film layer from the residual layer; the temperature of the second annealing is in the range of 300-600 ℃, and in the scheme of the application, the temperature is 430 ℃, so as to eliminate implantation damage. The heat treatment time during annealing of the bond may be 1 to 100 hours, and by way of example, the heat treatment time in the present embodiment may be 50 hours.
During the heat treatment, bubbles are formed in the implanted layer, for example, hydrogen ions form hydrogen gas and helium ions form helium gas. As the heat treatment progresses, the bubbles in the implanted layer are connected together and finally split from the implanted layer, the residual layer is peeled off from the bond, and the thin film layer remains on the spacer layer 200. Finally polishing and thinning the film layer to 50-3000 nm to obtain the composite film. By way of example, the thin film layer may be polished down to 400nm.
FIG. 3 is a flow chart of another method of preparing the composite film of FIG. 1.
Referring to fig. 3, in some other examples, the method of preparing the composite film further includes:
s500: ions are implanted into the substrate layer 100.
Specifically, in step S100, the polycrystalline rod or amorphous rod is cut, polished, and the substrate layer 100 is obtained by implanting ions into the substrate layer 100 after the step of obtaining the substrate layer 100 is completed, thereby obtaining the substrate layer 100 made of polycrystalline material or amorphous material. The polycrystalline rod means a polycrystalline rod made of polycrystalline material, and the amorphous rod means an amorphous rod made of amorphous material. Illustratively, the implanted ions include at least one of hydrogen ions and oxygen ions.
Other steps of the method are the same as those mentioned in the above examples and are not described here again.
It is to be understood that, based on the several embodiments provided in the present application, those skilled in the art may combine, split, reorganize, etc. the embodiments of the present application to obtain other embodiments, which all do not exceed the protection scope of the present application.
The foregoing detailed description of the embodiments of the present application further illustrates the purposes, technical solutions and advantageous effects of the embodiments of the present application, and it should be understood that the foregoing is merely a specific implementation of the embodiments of the present application, and is not intended to limit the scope of the embodiments of the present application, and any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the embodiments of the present application should be included in the scope of the embodiments of the present application.
Claims (10)
1. A composite film, comprising:
a substrate layer (100), an isolation layer (200), and an active layer (300) that are stacked in this order;
-the isolation layer (200) is for isolating the substrate layer (100) from the active layer (300);
the active layer (300) is used for realizing a photoelectric function;
the substrate layer (100) is made of polycrystalline material and/or amorphous material.
2. The composite film of claim 1, wherein the polycrystalline material comprises at least one of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon carbide, polycrystalline silicon nitride, polycrystalline quartz, polycrystalline sapphire, polycrystalline gallium nitride, polycrystalline gallium arsenide, and polycrystalline aluminum nitride.
3. The composite film of claim 1, wherein the amorphous material comprises at least one of amorphous silicon, amorphous germanium, amorphous silicon carbide, amorphous silicon nitride, amorphous quartz, amorphous sapphire, amorphous gallium nitride, amorphous gallium arsenide, and amorphous aluminum nitride.
4. The composite film of claim 1, wherein the substrate layer (100) has a resistivity greater than 2kohm.
5. The composite film according to claim 1, wherein the surface roughness of the substrate layer (100) is less than 0.5nm.
6. The composite film according to claim 1, wherein the thickness of the substrate layer (100) is 300nm-5000nm.
7. A method for producing a composite film according to any one of claims 1 to 5, comprising:
cutting, grinding and polishing the polycrystalline rod body or the amorphous rod body to obtain a substrate layer (100);
preparing an isolation layer (200) on one side of the substrate layer (100);
preparing an active layer (300) on the side of the isolation layer (200) facing away from the substrate layer (100) to obtain a thin film intermediate;
and (3) annealing the film intermediate to obtain the composite film.
8. The method of claim 7, wherein the polycrystalline rod comprises at least one of polycrystalline silicon, polycrystalline germanium, polycrystalline silicon carbide, polycrystalline silicon nitride, polycrystalline quartz, polycrystalline sapphire, polycrystalline gallium nitride, polycrystalline gallium arsenide, and polycrystalline aluminum nitride.
9. The method according to claim 7, wherein the amorphous rod body is made of at least one of amorphous silicon, amorphous germanium, amorphous silicon carbide, amorphous silicon nitride, amorphous quartz, amorphous sapphire, amorphous gallium nitride, amorphous gallium arsenide, and amorphous aluminum nitride.
10. The method for producing a composite film according to claim 8, characterized in that the method for producing further comprises:
and (3) cutting, grinding and polishing the polycrystalline rod body or the amorphous rod body to obtain a substrate layer (100), and implanting ions into the substrate layer (100) after the step of obtaining the substrate layer (100) is completed.
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