CN116748979A - Polishing method for flat-edge silicon wafer - Google Patents

Polishing method for flat-edge silicon wafer Download PDF

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Publication number
CN116748979A
CN116748979A CN202310791277.XA CN202310791277A CN116748979A CN 116748979 A CN116748979 A CN 116748979A CN 202310791277 A CN202310791277 A CN 202310791277A CN 116748979 A CN116748979 A CN 116748979A
Authority
CN
China
Prior art keywords
silicon wafer
base
flat
polishing
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310791277.XA
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Chinese (zh)
Inventor
陈奎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Zhongxin Wafer Semiconductor Technology Co ltd
Original Assignee
Shanghai Zhongxin Wafer Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Zhongxin Wafer Semiconductor Technology Co ltd filed Critical Shanghai Zhongxin Wafer Semiconductor Technology Co ltd
Priority to CN202310791277.XA priority Critical patent/CN116748979A/en
Publication of CN116748979A publication Critical patent/CN116748979A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

Abstract

The application relates to the field of wafer manufacturing and discloses a flat-edge silicon wafer polishing method. The flat-edge silicon wafer polishing method provided by the application comprises the following steps: after grabbing the silicon wafer from the transport plate by using a manipulator, the silicon wafer advances along a preset track, and the back surface of the silicon wafer coated with the adhesive is attached and fixed towards the front plane of the base; the transporting plate is provided with a flat edge corrector, and before the manipulator grabs the silicon wafer, the flat edge corrector is used for checking and correcting the flat edge position of the silicon wafer; the base is fixedly arranged on the supporting seat, and the back surface of the base faces the supporting seat; the movable supporting seat drives the front surface of the base to move towards the fixed disc until the front surface of the silicon wafer is abutted with polishing cloth arranged on the surface of the fixed disc; the supporting seat vertically presses and rotates the base, so that the silicon wafer and the polishing cloth are rubbed with each other, the front surface of the silicon wafer is polished, the polished surface of the front surface of the silicon wafer is smooth, polishing steps generated at the edge of the silicon wafer can be avoided, and the utilization rate of the silicon wafer is improved.

Description

Polishing method for flat-edge silicon wafer
Technical Field
The application relates to the field of wafer manufacturing, in particular to a polishing method for a flat-edge silicon wafer.
Background
The polishing of the silicon wafer is a very important step for the manufacture of the wafer, the quality of the convenient surface of the wafer determines the yield in the subsequent crystal manufacture, and the small-size silicon wafer adopts a flat edge as a reference surface, so that a plurality of silicon wafers are attached to a ceramic disc for polishing in the small-diameter actual polishing production process, as shown in fig. 1, the position of the flat edge is easy to deviate in the attaching process, the silicon wafer 1' is deviated, in the polishing process, the abrasion of the polishing cloth on the polishing track of the silicon wafer is less because of the silicon wafer deviation area relative to other areas, the abrasion speed of the polishing cloth on the silicon wafer is faster, the friction removal amount is more, the polished edge of the silicon wafer has steps, and the wafer is poor. The edge does not act as the primary working area at the early stage, so the bad majority is accepted by the manufacturer. However, with the development of integrated circuits, the silicon wafer utilization rate is higher and higher, the adverse effect of the edge steps is more and more remarkable, the market puts higher requirements on the polishing of the silicon wafer, the problem of the edge steps needs to be solved, and the overall utilization rate of the silicon wafer is improved.
Disclosure of Invention
The application aims to provide a flat-edge silicon wafer polishing method, which enables a polished surface of a silicon wafer to be flat, avoids generating edge steps and improves the utilization rate of the silicon wafer.
In order to solve the technical problems, the embodiment of the application provides a flat-edge silicon wafer polishing method, which comprises the following steps:
after grabbing the silicon wafer from the transport plate by using a manipulator, the silicon wafer advances along a preset track, and the back surface of the silicon wafer coated with the adhesive is attached and fixed towards the front plane of the base;
the transporting plate is provided with a flat edge corrector, and before the manipulator grabs the silicon wafer, the flat edge corrector is used for checking and correcting the flat edge position of the silicon wafer;
the base is fixedly arranged on the supporting seat, and the back surface of the base faces the supporting seat;
the movable supporting seat drives the front surface of the base to move towards the fixed disc until the front surface of the silicon wafer is abutted with polishing cloth arranged on the surface of the fixed disc;
the support base vertically presses and rotates the base, so that the silicon wafer and the polishing cloth are rubbed with each other, and the polishing of the front surface of the silicon wafer is completed.
Further, the flat edge corrector comprises a first laser detection device and a position adjusting device, wherein the position adjusting device can adjust the relative position of the silicon wafer and the transport plate according to the indication of the first laser detection device.
Further, a plurality of silicon chips are attached to the base, and after the attaching of the plurality of silicon chips is completed, the attaching positions of the plurality of silicon chips are inspected by using a second laser detection device.
Further, when the supporting seat drives the base to rotate, the fixed disc and the supporting seat rotate in the same direction.
Further, the polishing cloth is periodically subjected to polishing trace dressing, and the dressing frequency is that the polishing cloth is subjected to dressing once in 200 minutes to 400 minutes.
Further, the polishing cloth is replaced periodically, and the replacement frequency is that the polishing cloth is replaced once in 60-100 hours.
Further, the adhesive is rosin resin.
Compared with the prior art, the silicon wafer polishing method provided by the application has the advantages that the flat edges of each silicon wafer are in relatively fixed positions when the manipulator grabs the silicon wafer for attaching through the flat edge corrector on the conveying disc, the positions of the plurality of attached silicon wafers on the plane of the base are guaranteed to be uniform and symmetrical, the positions of the attached silicon wafers are further checked through the second laser detection device after the silicon wafer is attached, and the silicon wafers are uniformly distributed on the circumference taking the center point of the plane of the front face of the base as the center of the circle before polishing is started, so that the polishing removal amount of each part of the front face of each silicon wafer is consistent during polishing, the flatness of the front face of the polished silicon wafer is guaranteed, edge steps are avoided, and the overall utilization rate of the silicon wafer is improved.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to be taken in a limiting sense, unless otherwise indicated.
FIG. 1 is a schematic diagram of a flat side offset condition of a silicon wafer attached to a susceptor in the prior art;
FIG. 2 is a flow chart of a flat edge silicon wafer polishing method provided by the application;
FIG. 3 is a schematic view of the structure of a silicon wafer in the flat-edge silicon wafer polishing method provided by the application;
fig. 4 is a schematic diagram of the structure of the flat-edge silicon wafer polishing method according to the present application during polishing.
Reference numerals illustrate: 1. a silicon wafer; 11. a flat edge; 1', offsetting a silicon wafer; 2. a base; 3. a support base; 31. a connector; 4. a fixed disk; 5. polishing cloth; 6. an aperture.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the claims of the present application can be realized without these technical details and various changes and modifications based on the following embodiments.
As shown in fig. 1 to 4, the flat-edge silicon wafer polishing method provided in the embodiment of the application comprises the following steps:
first, the silicon wafer 1 is grasped from the transport tray by a robot, and then the back surface coated with the adhesive is attached and fixed to the front surface plane of the susceptor 2.
The conveying disc is provided with a flat edge corrector, the silicon wafer 1 is conveyed to a designated position of an accessory of the base 2 through the conveying disc, the front surface of the silicon wafer 1 is adsorbed by the sucker of the manipulator, the back surface coated with the adhesive is attached and fixed towards the front surface plane of the base 2, and the adhesive is rosin resin preferably; in one embodiment, the number of attached silicon wafers 1 of 4 inch specification is 7 each time, the number of attached silicon wafers 1 of 5 inch specification is 5 each time, the size of the base 2 can be selected differently, the number of attached silicon wafers 1 of different specifications is selected differently, and the selection is performed according to actual production requirements.
After the silicon wafer 1 is conveyed to a designated position near the base 2 through the conveying disc, before the manipulator sucking disc adsorbs and grabs the silicon wafer 1, a flat edge corrector is started, and the flat edge corrector is used for detecting and correcting the position of the flat edge 11 of the silicon wafer 1 so as to ensure the accuracy of the position of the flat edge 11 when the manipulator grabs the silicon wafer 1 and places the silicon wafer on the base 2, and avoid the generation of the deviation of the flat edge 11. The flat edge corrector comprises a first laser detection device and a position adjustment device, wherein the first laser detection device is fixedly arranged on the transport plate, when the flat edge corrector is started, the first laser detection device emits a laser indication line, and when the edge of the flat edge 11 of the silicon wafer 1 is overlapped with the laser indication line, the position of the silicon wafer 1 is correct without adjustment; when the edge of the flat edge 11 of the silicon wafer is not overlapped with the laser indication line, the position adjusting device is started, the lifting mechanism applies force to the center point of the silicon wafer 1, the silicon wafer 1 is separated from the transport disc in parallel, and then the silicon wafer 1 is driven to rotate, at the moment, the transport disc is kept in a static state, and the relative position of the silicon wafer 1 and the transport disc is adjusted, so that the edge of the flat edge 11 of the silicon wafer 1 is overlapped with the laser indication line, the stability of the position of the silicon wafer 1 relative to the transport disc is ensured, and the accuracy of the relative position of the flat edge 11 of the silicon wafer and the base 2 is further ensured when the silicon wafer 1 is attached to the base 2.
Preferably, the plurality of silicon wafers 1 are attached to the base 2, the specifications of the silicon wafers 1 on the same base 2 are the same, after the attaching of the plurality of silicon wafers 1 to the base 2 is completed, the attaching position of the silicon wafers 1 is detected, a second laser detection device is arranged above the base 2, the attaching position area is delimited by the second laser detection device, namely, a circular aperture 6 taking the center point of the front plane of the base 2 as the center of the circle is displayed on the front of the base 2, and whether the relative positions of the silicon wafers 1 are uniformly arranged in the range of the aperture 6 is automatically detected, namely, the plurality of silicon wafers 1 are uniformly and symmetrically distributed on a circumference taking the center point of the front of the base 2 as the center of the circle. Of course, a manual detection method may be adopted to check whether the distances between the two end points of the flat sides 11 of the silicon wafer and the aperture 6 are the same, if a position deviation occurs, the silicon wafer 1 needs to be attached again, and when the manual detection method is adopted, the diameter of the aperture 6 needs to be reduced as much as possible, so that the distances between the two end points of the flat sides 11 of the silicon wafer and the aperture 6 can be detected visually by manpower.
Next, the base 2 is fixedly mounted on the support base 3, and the back surface of the base 2 faces the support base 3.
The one end that supporting seat 3 and base 2 are connected is equipped with connector 31, and connector 31 is the same with base 2 shape, and the size is close, supporting seat 3 forms detachable fixed connection through connector 31 and the back of base 2.
Then, the movable supporting seat 3 drives the front surface of the base 2 to move towards the fixed disc until the front surface of the silicon wafer 1 is abutted with polishing cloth 5 arranged on the surface of the fixed disc.
The polishing cloth 5 is fixedly arranged on the fixed disc 4, the front surface of the base 2 moves towards the fixed disc 4 under the drive of the supporting seat 3, and the silicon wafer 1 is attached to the front surface of the base 2, so that the front surface of the silicon wafer 1 is abutted to the polishing cloth 5.
Finally, the supporting seat 3 vertically presses and rotates the base 2, so that the silicon wafer 1 and the polishing cloth 5 are rubbed with each other, and the front surface of the silicon wafer 1 is polished.
As shown in fig. 4, when polishing starts, under the vertical acting force of the supporting seat 3, the silicon wafer 1 can apply a uniform acting force to the polishing cloth 5, the supporting seat 3 rotates by taking the central axis of the supporting seat as a rotating shaft to drive the base 2 to rotate, and the front surface of the silicon wafer 1 and the polishing cloth 5 rub against each other under the action of a certain pressure, so that the surface of the silicon wafer 1 can be quantitatively polished and removed, and the front surface of the silicon wafer 1 can be smoother and flatter.
In order to improve the utilization rate of the polishing cloth 5, the fixed disk 4 drives the polishing cloth 5 to rotate along the same rotation direction of the supporting seat 3, and meanwhile, polishing liquid is injected inwards from the edge of the fixed disk 4, so that the polishing speed and quality of the silicon wafer 1 are improved.
In one embodiment, to ensure polishing efficiency and quality, multiple susceptors 2 may be simultaneously disposed on each platen 4, so that multiple groups of silicon wafers 1 are polished simultaneously; meanwhile, the polishing cloth 5 needs to be cleaned and brushed and replaced regularly, and in one embodiment, according to different specifications of the polished silicon wafer 1, the polishing trace on the polishing cloth 5 is cleaned and dressed by using a steel wire brush every 200 to 400 minutes; the polishing cloth 5 is replaced every 60 hours to 100 hours.
Compared with the prior art, the silicon wafer polishing method provided by the application has the advantages that the flat edges of each silicon wafer are in relatively fixed positions when the manipulator grabs the silicon wafer for attaching through the flat edge corrector on the conveying disc, the positions of the plurality of attached silicon wafers on the plane of the base are guaranteed to be uniform and symmetrical, the positions of the attached silicon wafers are further checked through the second laser detection device after the silicon wafer is attached, and the silicon wafers are uniformly distributed on the circumference taking the center point of the plane of the front face of the base as the center of the circle before polishing is started, so that the polishing removal amount of each part of the front face of each silicon wafer is consistent during polishing, the flatness of the front face of the polished silicon wafer is guaranteed, edge steps are avoided, and the overall utilization rate of the silicon wafer is improved.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the application and that various changes in form and details may be made therein without departing from the spirit and scope of the application.

Claims (7)

1. The flat-edge silicon wafer polishing method is characterized by comprising the following steps of:
after grabbing the silicon wafer from the transport plate by using a manipulator, the silicon wafer advances along a preset track, and the back surface of the silicon wafer coated with the adhesive is attached and fixed towards the front plane of the base;
the transporting plate is provided with a flat edge corrector, and before the manipulator grabs the silicon wafer, the flat edge corrector is used for checking and correcting the flat edge position of the silicon wafer;
the base is fixedly arranged on the supporting seat, and the back surface of the base faces the supporting seat;
the movable supporting seat drives the front surface of the base to move towards the fixed disc until the front surface of the silicon wafer is abutted with polishing cloth arranged on the surface of the fixed disc;
the support base vertically presses and rotates the base, so that the silicon wafer and the polishing cloth are rubbed with each other, and the polishing of the front surface of the silicon wafer is completed.
2. The flat edge silicon wafer polishing method as set forth in claim 1, wherein the flat edge corrector comprises a first laser detecting device, and a position adjusting device capable of adjusting the relative position of the silicon wafer and the transport plate according to the indication of the first laser detecting device.
3. The flat-edge silicon wafer polishing method as set forth in claim 1, wherein a plurality of silicon wafers are attached to the base, and when the attachment of the plurality of silicon wafers is completed, the attachment positions of the plurality of silicon wafers are inspected using the second laser inspection device.
4. The method of claim 1, wherein the fixed platen and the support base rotate in the same direction while the support base rotates the base.
5. The flat edge silicon wafer polishing method as set forth in claim 1, wherein the polishing cloth is subjected to polishing trace dressing at regular intervals, the dressing frequency being one dressing of 200 minutes to 400 minutes of the polishing cloth operation.
6. The flat edge silicon wafer polishing method as set forth in claim 1, wherein the polishing cloth is replaced periodically at a frequency of 60 to 100 hours.
7. The flat edge silicon wafer polishing method as set forth in claim 1, wherein said adhesive is rosin resin.
CN202310791277.XA 2023-06-30 2023-06-30 Polishing method for flat-edge silicon wafer Pending CN116748979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310791277.XA CN116748979A (en) 2023-06-30 2023-06-30 Polishing method for flat-edge silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310791277.XA CN116748979A (en) 2023-06-30 2023-06-30 Polishing method for flat-edge silicon wafer

Publications (1)

Publication Number Publication Date
CN116748979A true CN116748979A (en) 2023-09-15

Family

ID=87956890

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310791277.XA Pending CN116748979A (en) 2023-06-30 2023-06-30 Polishing method for flat-edge silicon wafer

Country Status (1)

Country Link
CN (1) CN116748979A (en)

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