CN116721917A - Preparation method of JBS diode by adopting carbon nitride P-type layer - Google Patents
Preparation method of JBS diode by adopting carbon nitride P-type layer Download PDFInfo
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- CN116721917A CN116721917A CN202310875890.XA CN202310875890A CN116721917A CN 116721917 A CN116721917 A CN 116721917A CN 202310875890 A CN202310875890 A CN 202310875890A CN 116721917 A CN116721917 A CN 116721917A
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- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- 239000002243 precursor Substances 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 8
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000006068 polycondensation reaction Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 2
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application belongs to the field of semiconductor light-emitting devices, and provides a preparation method of a JBS diode adopting a carbon nitride P-type layer, which comprises the following steps: s1: at N + Formation of N on a substrate by MOCVD epitaxial growth ‑ An epitaxial layer; s2: at N by PECVD ‑ Growing a SiO2 mask layer on the epitaxial layer, then performing gumming operation, photoetching and exposing by using a mask plate after gumming, and performing N-phase etching ‑ Two groove patterns are obtained on the epitaxial layer and used for etching the P-type material groove; s3: performing ICP etching on the device, and etching two grooves; s4: if residual glue is left, the device is subjected to photoresist removal treatment, and if no residual glue is left, the device can be directly placed into a BOE for removing residual SiO2, so that a groove type N is obtained ‑ An epitaxial layer; the application replaces traditional MOCVD or ion-dependent non-metal P type compoundThe technology of the P-type layer obtained by the implanter is changed, so that the cost of the process flow is greatly reduced, the cost and time are saved, and the process efficiency is improved.
Description
Technical Field
The application belongs to the field of semiconductor light-emitting devices, and particularly relates to a preparation method of a JBS diode adopting a carbon nitride P-type layer.
Background
In recent years, silicon carbide (SiC), which is a third generation semiconductor material, has been widely used in high-voltage and high-frequency scenes because of its advantages of large forbidden bandwidth, high breakdown electric field, high thermal conductivity, high electron saturation rate, strong radiation resistance, and the like. But with the consequent need for rectifiers with smaller turn-on voltages, larger turn-on currents and higher switching speeds. The JBS (junction barrier schottky ) diode is a device with the advantages of a pin diode and a Schottky diode, has forward characteristics similar to those of the Schottky diode, and has the advantages of small starting voltage, large on-current and high switching speed; the reverse characteristic is more similar to a pin diode, has the advantages of low leakage current and high breakdown voltage, is widely applied to a high-power high-voltage environment of SiC, and can fully play the advantages of the SiC device.
In the current technology, in order to manufacture a conventional JBS device, we generally need to use Metal Organic Chemical Vapor Deposition (MOCVD), ion implantation, and other methods to manufacture the device. After comprehensively considering the cost and the service condition of equipment, the method is found to have the problems of low deposition rate, low efficiency and high cost, and the process chamber of the equipment needs to be cleaned and maintained after a period of use, so that the method is low in efficiency and high in cost.
Disclosure of Invention
In order to solve the technical problems, the application provides a preparation method of a JBS diode adopting a carbon nitride P-type layer, which aims to solve the problems of low deposition rate, low efficiency, high cost and the like in the prior art, and the problems of cleaning and maintaining a process chamber of equipment after a period of use, low efficiency, high cost and the like.
A preparation method of a JBS diode adopting a carbon nitride P-type layer comprises the following steps:
s1: at N + Formation of N on a substrate by MOCVD epitaxial growth - An epitaxial layer;
s2: at N by PECVD - Growing a SiO2 mask layer on the epitaxial layer, then performing gumming operation, photoetching and exposing by using a mask plate after gumming, and performing N-phase etching - On the epitaxial layerTo two trench patterns for etching of P-type material trenches;
s3: performing ICP etching on the device, and etching two grooves;
s4: if residual glue is left, the device is subjected to photoresist removal treatment, and if no residual glue is left, the device can be directly placed into a BOE for removing residual SiO2, so that a groove type N is obtained - An epitaxial layer;
s5: to N of groove type - Performing spin-coating treatment on the epitaxial layer, and then performing mask and exposure treatment;
s6: preparing a P-type carbon nitride precursor;
s7: forming C-C coupling intermediate at Cu-N4 site under the condition of inert gas protection at 800 ℃ to obtain P-type doped carbon nitride, and adding N - The epitaxial layer is reversely buckled on a container containing a P-type carbon nitride precursor, and is put into a tube furnace to be heated for 4 hours at 800 ℃ under the condition of N2 and cooled to room temperature, and ions in the precursor are evaporated to N - On the epitaxial layer, the ions in the precursor undergo polycondensation reaction in the cooling process, and finally N - Forming a P-type carbon nitride film on the epitaxy;
s8: and (3) electrode evaporation treatment, wherein a layer of Ti/Al metal is evaporated on the surface of the device to serve as an anode, and a layer of Ni/Al is evaporated on the back of the device to serve as a cathode.
Preferably, in the step S6, the method for preparing the P-type carbon nitride precursor is to mix the dicyandiamide with the volume ratio of 2:1 and the mass percentage of 50% with 0.2mol/L of copper chloride, wherein the copper chloride is used as the copper ion source.
Compared with the prior art, the application has the following beneficial effects:
1. according to the application, the nonmetallic P-type compound replaces the traditional technology of relying on MOCVD or an ion implanter to obtain the P-type layer, so that the cost of a process flow is greatly reduced, the cost and the time are saved, and the process efficiency is improved.
Drawings
FIG. 1 is a schematic illustration of a JBS device fabrication flow of the present application;
FIG. 2 is an image of a device of the present application under an optical microscope;
fig. 3 is a pressure-resistant curve of the JBS device of the present application.
In the figure:
1、N + a substrate; 2. n (N) - An epitaxial layer; 3. a Ti/Al layer; 4. Ni/Al layer.
Detailed Description
Embodiments of the present application are described in further detail below with reference to the accompanying drawings and examples. The following examples are illustrative of the application but are not intended to limit the scope of the application.
Embodiment one: as shown in fig. 1 to 3: the application provides a preparation method of a JBS diode adopting a carbon nitride P-type layer, which comprises the following steps:
s1: at N + Formation of N by MOCVD epitaxial growth on substrate 1 - An epitaxial layer 2;
s2: at N by PECVD - Growing a SiO2 mask layer on the epitaxial layer 2, then performing gluing operation, photoetching and exposing by using a mask plate after gluing, and obtaining two groove patterns on the N-epitaxial layer 2 for etching a P-type material groove;
s3: performing ICP etching on the device, wherein the grooves are etched to be deeper than the parts with photoresist due to the fact that no photoresist is used for protecting the grooves, so that two grooves are etched as expected;
s4: if residual glue is left, the device is subjected to photoresist removal treatment, and if no residual glue is left, the device can be directly placed into a BOE for removing residual SiO2, so that a groove type N is obtained - An epitaxial layer 2;
s5: spin-coating the N-epitaxial layer 2 of the trench type device, masking and exposing, and developing to obtain photoresist components at the other parts except the trench part;
s6: preparing a P-type carbon nitride (P-C3N 4) precursor;
s7: forming C-C coupling intermediate at Cu-N4 site under the condition of inert gas protection at 800 ℃ to obtain P-type doped carbon nitride, and adding N - The epitaxial layer 2 is inversely buckled on a container containing a P-type carbon nitride precursor, and is put into a tube furnace to be heated for 4 hours at 800 ℃ under the condition of N2 and cooled to room temperatureEvaporating ions in the precursor to N - On the epitaxial layer 2, the ions in the precursor undergo polycondensation reaction during the temperature reduction process and finally undergo condensation reaction in N - Forming a P-type carbon nitride film on the epitaxial layer 2;
s8: and (3) electrode evaporation treatment, wherein a layer of Ti/Al metal is evaporated on the surface of the device to serve as an anode, and a layer of Ni/Al is evaporated on the back of the device to serve as a cathode.
Preferably, in the step S6, the method for preparing the P-type carbon nitride precursor is to mix the dicyandiamide with the volume ratio of 2:1 and the mass percentage of 50% with 0.2mol/L of copper chloride, wherein the copper chloride is used as the copper ion source.
From the above, the application replaces the traditional technology of relying on MOCVD or ion implanter to obtain the P-type layer with the non-metal P-type compound, which not only greatly reduces the cost of the process flow, saves the cost and time, but also improves the efficiency of the process.
While embodiments of the present application have been shown and described above for purposes of illustration and description, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives, and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.
Claims (2)
1. A preparation method of a JBS diode adopting a carbon nitride P-type layer is characterized by comprising the following steps:
s1: at N + Formation of N on a substrate by MOCVD epitaxial growth - An epitaxial layer;
s2: at N by PECVD - Growing a SiO2 mask layer on the epitaxial layer, then performing gumming operation, photoetching and exposing by using a mask plate after gumming, and performing N-phase etching - Two groove patterns are obtained on the epitaxial layer and used for etching the P-type material groove;
s3: performing ICP etching on the device, and etching two grooves;
s4: if residual glue is left, the device is treated by photoresist removal, if no residual glue exists, the device can be directly placed into BOE is used for removing the residual SiO2 to obtain the N of the groove type - An epitaxial layer;
s5: to N of groove type - Performing spin-coating treatment on the epitaxial layer, and then performing mask and exposure treatment;
s6: preparing a P-type carbon nitride precursor;
s7: forming C-C coupling intermediate at Cu-N4 site under the condition of inert gas protection at 800 ℃ to obtain P-type doped carbon nitride, and adding N - The epitaxial layer is reversely buckled on a container containing a P-type carbon nitride precursor, and is put into a tube furnace to be heated for 4 hours at 800 ℃ under the condition of N2 and cooled to room temperature, and ions in the precursor are evaporated to N - On the epitaxial layer, the ions in the precursor undergo polycondensation reaction in the cooling process, and finally N - Forming a P-type carbon nitride film on the epitaxial layer;
s8: and (3) electrode evaporation treatment, wherein a layer of Ti/Al metal is evaporated on the surface of the device to serve as an anode, and a layer of Ni/Al is evaporated on the back of the device to serve as a cathode.
2. The method for preparing the JBS diode by using the carbon nitride P-type layer according to claim 1, wherein: in the step S6, the method for preparing the P-type carbon nitride precursor is to mix the cyanamide with the volume ratio of 2:1 and the mass percentage of 50 percent with 0.2mol/L of copper chloride, wherein the copper chloride is used as a copper ion source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310875890.XA CN116721917A (en) | 2023-07-17 | 2023-07-17 | Preparation method of JBS diode by adopting carbon nitride P-type layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310875890.XA CN116721917A (en) | 2023-07-17 | 2023-07-17 | Preparation method of JBS diode by adopting carbon nitride P-type layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116721917A true CN116721917A (en) | 2023-09-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310875890.XA Pending CN116721917A (en) | 2023-07-17 | 2023-07-17 | Preparation method of JBS diode by adopting carbon nitride P-type layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116721917A (en) |
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2023
- 2023-07-17 CN CN202310875890.XA patent/CN116721917A/en active Pending
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