CN116715512A - Ceramic body - Google Patents
Ceramic body Download PDFInfo
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- CN116715512A CN116715512A CN202310527850.6A CN202310527850A CN116715512A CN 116715512 A CN116715512 A CN 116715512A CN 202310527850 A CN202310527850 A CN 202310527850A CN 116715512 A CN116715512 A CN 116715512A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 125
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 16
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 28
- 238000002441 X-ray diffraction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 34
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 17
- 238000005452 bending Methods 0.000 description 13
- 238000007789 sealing Methods 0.000 description 13
- 239000011651 chromium Substances 0.000 description 12
- 239000003086 colorant Substances 0.000 description 11
- 238000010304 firing Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000005204 segregation Methods 0.000 description 6
- 239000011572 manganese Substances 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 102100035474 DNA polymerase kappa Human genes 0.000 description 1
- 101710108091 DNA polymerase kappa Proteins 0.000 description 1
- 229910016583 MnAl Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/404—Refractory metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Abstract
A ceramic body comprising Al 2 O 3 、SiO 2 And MnO as essential components, comprising Mo and Cr 2 O 3 At least one of them as an optional component. In the ceramic body, al 2 O 3 The content of (2) is 82.0-95.0 mass%, siO 2 The content of (2) is 3.0-8.0 mass%, the content of MnO is 2.0-6.0 mass%, and MoO is used 3 Mo content and Cr content of the converter 2 O 3 The total content of (2) is not more than 4.0 mass% and the content of the remainder is less than 0.1 mass%.
Description
The application is as follows: 201980048264.5, filing date: division of chinese patent application for applications of the title "ceramic body" was filed on 10 months 15 days 2019.
Technical Field
The application relates to a ceramic body.
Background
Patent document 1 discloses, as an example of a ceramic body, an insulating substrate containing 90 mass% or more of Al 2 O 3 1 to 6 mass% of SiO 2 In Mn 2 O 3 2 to 8 mass% of MnAl in terms of conversion 2 O 4 Mo in an amount of 2 mass% or less. In the insulating substrate described in patent document 1, mg is preferably contained in an amount of 0.1 to 3 mass% in terms of oxide conversion in order to improve stability of strength.
Patent document 2 discloses, as an example of a ceramic body, an insulating substrate containing Al as a main component 2 O 3 3 to 7.5 mass% of SiO 2 In Mn 2 O 3 2 to 5 mass% of Mn in terms of MgO, 0.3 to 0.7 mass% of Mg in terms of MgO, and 0.3 to 0.7 mass% of Mo in terms of MoO.
Patent document 3 discloses a ceramic body containing Al 2 O 3 89.0 to 92.0 mass% Al in terms of SiO 2 2.0 to 5.0 mass% of Si in terms of MnO, 2.0 to 5.0 mass% of Mn in terms of MgO, 0 to 2.0 mass% of Mg in terms of MgO, zrO 2 0.05 to 2.0 mass% of Zr in terms of Zr.
[ Prior Art literature ]
[ patent literature ]
Patent document 1: japanese patent No. 4413224
Patent document 2: japanese patent No. 5784153
Patent document 3: international publication No. 2015/141099
Disclosure of Invention
Problems to be solved by the application
The ceramic bodies described in patent documents 1 to 3 have a problem that dimensional deviations are likely to occur. The present inventors have conducted intensive studies and as a result, have found the following new findings: apart from Al as a main component 2 O 3 SiO as sintering aid 2 And MnO, mo or/and Cr as a colorant 2 O 3 The content of the remaining portions other than the above has an influence on the dimensional deviation.
The purpose of the present application is to provide a ceramic body that can suppress dimensional deviations.
Technical scheme for solving problems
The ceramic body of the present application contains Al 2 O 3 、SiO 2 And MnO as essential components, contains Mo and Cr 2 O 3 At least one of them as an optional component. In the ceramic body, al 2 O 3 The content of (2) is 82.0-95.0 mass%, siO 2 The content of (2) is 3.0-8.0 mass%, the content of MnO is 2.0-6.0 mass%, and MoO is used 3 Mo content and Cr content of the converter 2 O 3 The total content of (2) is not more than 4.0 mass% and the content of the remainder is less than 0.1 mass%.
Effects of the application
According to the present application, a ceramic body that can suppress dimensional deviation can be provided.
Drawings
Fig. 1 is a cross-sectional view showing a structure of a first ceramic package according to an embodiment.
Fig. 2 is a cross-sectional view showing the structure of a second ceramic package according to the embodiment.
Fig. 3 is a cross-sectional view showing a structure of a multilayer circuit board in a second ceramic package according to the embodiment.
Detailed Description
(ceramic body)
The ceramic green body is a composition obtained by sintering a green sheet obtained by molding a ceramic material powder into a tape shape and a molded body obtained by compacting the ceramic material powder. The ceramic body according to the present embodiment is suitable for use in various ceramic packages such as a ceramic package for sealing a vibrator such as a crystal vibrator, a ceramic package for sealing a semiconductor element such as a CMOS image sensor, and a ceramic package for sealing an optical semiconductor element.
The ceramic body according to the present embodiment contains Al as a main component 2 O 3 (aluminum oxide) and SiO as sintering aid 2 (silica) and MnO (manganese oxide) as essential components.
The ceramic body contains Mo and Cr as colorants 2 O 3 At least one of (chromium oxide) as an optional component. The ceramic body may contain only Mo as a colorant or only Cr 2 O 3 As the coloring agent, mo and Cr may be contained 2 O 3 Both of which are used as coloring agents and may not contain Mo and Cr 2 O 3 Both act as colorants. In the case where the ceramic body contains Mo as a colorant, at least a part of Mo may be present in the form of metal or at least a part of Mo may be present in the form of oxide (e.g., moO 3 ) Exists.
The content of each component constituting the ceramic body is as follows.
·Al 2 O 3 ：
82.0 mass% or more and 95.0 mass% or less
·SiO 2 ：
3.0 mass% or more and 8.0 mass% or less
·MnO：
2.0 mass% or more and 6.0 mass% or less
In MoO 3 Mo content and Cr content of the converter 2 O 3 Is the sum of the contents of (3):
4.0 mass% or less
Remainder:
less than 0.1 mass%
As described above, in the ceramic body according to the present embodiment, al 2 O 3 、SiO 2 MnO and a colorant (Mo or/and Cr) 2 O 3 ) The content of the remaining portions other than the above is suppressed to less than 0.1 mass%, so that the respective components are uniformly sintered in a state of being dispersed without segregation. Therefore, in the ceramic body according to the present embodiment, dimensional deviation is suppressed.
Further, by controlling the content of the remaining part of the ceramic body to be less than 0.1 mass%, the components are uniformly sintered in a state of being dispersed without segregation, and thus the local generation of a low melting point region in the flux of the glass component can be suppressed. Therefore, the ceramic green body can be prevented from adhering to the firing support plate.
Further, by suppressing the content of the remaining portion of the ceramic body to less than 0.1 mass%, each component is uniformly sintered in a state of being dispersed without segregation, and therefore the timing at which the glass component is melted in the back surface side region on the firing support plate side can be made to coincide with the timing at which the glass component is melted in the surface side region on the opposite side to the firing support plate side. Therefore, warping of the ceramic body in the thickness direction can be suppressed.
The content of the remaining portion in the ceramic body is more preferably less than 0.05 mass%. Thus, dimensional deviation of the ceramic body can be further suppressed.
The content of the remaining portion in the ceramic body is particularly preferably 0 mass%. Thus, not only the dimensional deviation of the ceramic body but also the adhesion of the ceramic body to the firing support plate can be further suppressed.
In the ceramic body, siO 2 The ratio of the content of (c) to the content of MnO is not particularly limited, but is preferably 0.8 or more and 3.5 or less. If the content is within this range, mn can be suppressed 3 Al 2 Si 3 O 12 Precipitation in the ceramic body, thus reducing the Mn content 3 Al 2 Si 3 O 12 Color unevenness caused by precipitation of (3). In addition, in the case of applying the ceramic body to a ceramic package for sealing a vibrator or a semiconductor elementIn the case of SiO 2 The ratio of the content of (2) to the content of MnO is preferably 0.8 or more and 2.1 or less. This can particularly improve the bending strength of the ceramic body. On the other hand, in the case of applying the ceramic green body to a ceramic package for sealing an optical semiconductor element, siO 2 The ratio of the content of (2) to the content of MnO is preferably 1.9 or more and 3.5 or less. Thus, although the bending strength of the ceramic body is slightly lowered, the relative dielectric constant of the ceramic body is easily adjusted to 8.0 to 9.0.
The ceramic body comprises a crystalline phase and a glass phase. In the case where the ceramic body contains Mo as a colorant, the crystal phase contains Al as a main crystal phase 2 O 3 A crystal phase and a Mo crystal phase as a secondary crystal phase. The crystalline phase may also contain other than Al 2 O 3 A crystal phase other than the crystal phase and the Mo crystal phase (hereinafter, referred to as "remaining crystal phase"). On the other hand, in the case where the ceramic body does not contain Mo as a colorant, the crystal phase contains Al as a main crystal phase 2 O 3 A crystalline phase. Removing Al 2 O 3 In addition to the crystal phase, the crystal phase may contain the remaining part of the crystal phase. The crystal phase may contain only 1 crystal phase as the remaining crystal phase, or may contain a plurality of crystal phases as the remaining crystal phase.
Here, when the ceramic body is pulverized to identify a crystal phase from an X-ray diffraction pattern, the main peak intensity of the X-ray diffraction pattern of the remaining crystal phase is higher than that of Al 2 O 3 The main peak intensity of the X-ray diffraction pattern of the crystalline phase is preferably 0.5 or less. This suppresses the occurrence of strain in the glass phase due to the presence of the remaining crystal phase, and thus improves the bending strength (so-called flexural strength) of the ceramic body.
The bending strength of the ceramic body may be set according to the characteristics required for the ceramic package to which the ceramic body is applied. For example, when the ceramic body is applied to a ceramic package for sealing a vibrator or a semiconductor element, the bending strength of the ceramic body is preferably 700MPa or more. In the case where the ceramic body is applied to a ceramic package for sealing an optical semiconductor element, the bending strength of the ceramic body is preferably 390MPa or more. In the present embodiment, "bending strength" means 3-point bending strength, and is a value measured at room temperature in accordance with JIS R1601 (bending test method for fine ceramics).
The relative dielectric constant of the ceramic body may be set according to the characteristics required for the ceramic package to which the ceramic body is applied. For example, in the case where the ceramic body is applied to a ceramic package for sealing a vibrator or a semiconductor element, the relative dielectric constant of the ceramic body is not particularly limited. In the case where the ceramic body is applied to a ceramic package for sealing an optical semiconductor element, the relative dielectric constant of the ceramic body is preferably 8.0 or more and 9.0 or less.
The porosity of the ceramic body may be set according to the characteristics required for the ceramic package to which the ceramic body is applied. For example, when the ceramic body is applied to a ceramic package for sealing a vibrator or a semiconductor element, the porosity of the ceramic body is preferably 3% or less. In the case where the ceramic body is applied to a ceramic package for sealing an optical semiconductor element, the porosity of the ceramic body is preferably 3% or more and 8% or less. In the present embodiment, the "porosity" is a value measured by taking an image of a polished ceramic cross section with an electron microscope and performing 2-valued by image processing software.
(ceramic package)
Here, 2 structural examples of a ceramic package to which the ceramic body according to the present embodiment is applied will be described with reference to the drawings.
(1) First ceramic package 100
Fig. 1 is a cross-sectional view of a first ceramic package 100.
The first ceramic package 100 includes an insulating substrate 1, a plurality of conductor layers 2, a metallization layer 3, a crystal oscillator 4, a CMOS image sensor 6, a plating layer 8, and a lid 10. The first ceramic package 100 seals the crystal oscillator 4 and the CMOS image sensor 6.
The insulating substrate 1 is composed of the ceramic body. The contents of the respective components constituting the insulating substrate 1 are as follows.
·Al 2 O 3 ：
82.0 mass% or more and 95.0 mass% or less
·SiO 2 ：
3.0 mass% or more and 8.0 mass% or less
·MnO：
2.0 mass% or more and 6.0 mass% or less
In MoO 3 Mo content and Cr content of the converter 2 O 3 Is the sum of the contents of (3):
4.0 mass% or less
Remainder:
less than 0.1 mass%
As described above, in the insulating substrate 1 according to the present embodiment, since the content of the remaining portion is suppressed to be less than 0.1 mass%, the components are uniformly sintered in a state of being dispersed without segregation, and thus, dimensional deviation can be suppressed. The bending strength of the insulating substrate 1 is preferably 700MPa or more. The porosity of the insulating substrate 1 is preferably 3 or less.
The insulating substrate 1 has a bottom portion 1a and a side wall portion 1b. The side wall portion 1b is disposed on the outer edge of the bottom portion 1 a. The bottom portion 1a and the side wall portion 1b may be integrally formed.
Each conductor layer 2 is provided so as to penetrate the bottom portion 1 a. The metallization layer 3 is arranged on the upper surface of the sidewall portion 1b. The metallization layer 3 is formed in a ring shape. The metallized layer 3 may be formed by adding a plurality of ceramic components to W or Mo as a main component of a conductor. The insulating substrate 1 and the metallized layer 3 according to the present embodiment can be manufactured by simultaneous firing in a reducing atmosphere containing hydrogen, nitrogen, and water vapor.
The crystal oscillator 4 is an example of an oscillator. The crystal oscillator 4 is connected to the conductor layer 2 via a conductive adhesive 5. The CMOS image sensor 6 is an example of a semiconductor element. The CMOS image sensor 6 is connected to the conductor layer 2 via a wire bond 7.
The plating layer 8 is disposed on the upper surface of the metallization layer 3. The plating layer 8 is formed in a ring shape. The lid 10 is disposed on the plating layer 8 via eutectic ag—cu solder 9. The cover 10 closes the opening of the side wall portion 1b. The cover 10 may be composed of a metal material.
(2) Second ceramic package 200
Fig. 2 is a cross-sectional view of a second ceramic package 200.
The second ceramic package 200 includes a base 11, an electronic cooling element 12, an optical semiconductor element 13, a multilayer circuit board 14, a frame 15, a seal ring 16, a cover 17, a translucent window member 18, a tube 19, an optical fiber connection tube 20a, and an optical fiber 20b. The second ceramic package 200 encapsulates the optical semiconductor element 13. The second ceramic package 200 is a so-called optical module.
The base 11 is formed in a plate shape. The base 11 is made of a material having high thermal conductivity such as copper tungsten. The electronic cooling element 12 is disposed on the base 11. The optical semiconductor element 13 is disposed on the electronic cooling element 12.
The multilayer circuit board 14 is disposed on the outer edge of the base 11. The multilayer circuit board 14 is provided with input terminals 30a, 30b exposed outside the package and output terminals 31a, 31b exposed inside the package. The positive phase signal is input to the input terminal 30a from the outside. An inverted signal inverted from the positive phase signal is input to the input terminal 30 b. The normal phase signal inputted to the input terminal 30a is outputted from the output terminal 31a to the optical semiconductor element 13 via the bonding wire 13 a. The inverted signal inputted to the input terminal 30b is outputted from the output terminal 31b to the optical semiconductor element 13 via the bonding wire 13 b. In the following description, the combination of the positive phase signal and the inverted signal is simply referred to as a differential signal.
The frame 15 is disposed on the multilayer circuit board 14. The seal ring 16 is disposed on the upper surface of the housing 15. The seal ring 16 is a member for welding the cover 17. The seal ring 16 and the cover 17 may be made of kovar alloy or the like in which nickel and cobalt are mixed with iron.
A tube 19 is fitted into a hole 19a formed between the multilayer circuit board 14 and the housing 15. The tube 19 houses the translucent window member 18. The light-transmitting window member 18 is made of sapphire, glass, or the like. The tube 19 is connected to a fiber connection tube 20a. The tube 19 and the fiber connection tube 20a may be made of kovar or the like. The optical fiber 20b is fixed to the optical fiber connection tube 20a.
Here, fig. 3 is an exploded perspective view showing the structure of the multilayer circuit board 14.
The multilayer circuit board 14 includes 6 layers of circuit boards 14a to 14f, first signal lines 21a, 22a, 23a, second signal lines 21b, 22b, 23b, ground layers 24a, 24b, 24c, ground vias 25a, 25b, 25c, and ground terminals 26a, 26b, 26c.
Each of the circuit boards 14a to 14f is formed of the ceramic green body. The contents of the components constituting the circuit boards 14a to 14f are as follows.
·Al 2 O 3 ：
82.0 mass% or more and 95.0 mass% or less
·SiO 2 ：
3.0 mass% or more and 8.0 mass% or less
·MnO：
2.0 mass% or more and 6.0 mass% or less
In MoO 3 Mo content and Cr content of the converter 2 O 3 Is the sum of the contents of (3):
4.0 mass% or less
Remainder:
less than 0.1 mass%
As described above, in the circuit boards 14a to 14f according to the present embodiment, since the content of the remaining portion is suppressed to be less than 0.1 mass%, the components are uniformly sintered in a state of being dispersed without segregation, and thus, the dimensional deviation can be suppressed. The relative dielectric constant of each of the circuit boards 14a to 14f is preferably 8.0 to 9.0. The bending strength of each of the circuit boards 14a to 14f is preferably 390MPa or more. The porosity of each of the circuit boards 14a to 14f may be 3 or more and 8 or less.
The 6-layer circuit boards 14a to 14f are sequentially stacked. The input terminals 30a and 30b and the output terminals 31a and 31b are provided on the circuit board 14f of the 6 th layer.
The input-side via connection portion 21a of the first signal lines 21a, 22a, 23a is a via conductor penetrating from the 6 th layer circuit board 14f to the 3 rd layer circuit board 14c, and connects the first input terminal 30a and the interlayer wiring portion 22 a. The input-side via connection portion 21b of the first signal lines 21b, 22b, and 23b is a via conductor penetrating from the 6 th layer circuit board 14f to the 5 th layer circuit board 14e, and connects the second input terminal 30b and the interlayer wiring portion 22 b.
The output-side via connection portion 23a of the first signal lines 21a, 22a, 23a is configured as a via conductor penetrating through the 6 th-layer circuit board 14f to the 3 rd-layer circuit board 14c, and connects the first output terminal 31a and the interlayer wiring portion 22 a. The output-side via connection portion 23b of the second signal lines 21b, 22b, 23b is configured as a via conductor penetrating through the 6 th layer circuit board 14f to the 5 th layer circuit board 14e, and connects the second output terminal 31b and the interlayer wiring portion 22 b.
A ground layer 24b is disposed between the 2 interlayer wiring portions 22a, 22 b. A ground layer 24a is provided on the 1 st layer circuit board 14a provided with the interlayer wiring portion 22 a. A ground layer 24c is provided on the 5 th layer circuit board 14e provided with the interlayer wiring portion 22 b.
The ground layers 24a, 24b, 24c constitute conductive metal electrodes. The ground layers 24a, 24b, and 24c are connected to ground terminals 26a, 26b, and 26c on the sixth-layer circuit board 14f through ground vias 25a, 25b, and 25 c.
With the multilayer circuit board 14 having the above configuration, the positive phase signal inputted to the input terminal 30a is transmitted to the output terminal 31a via the first signal lines 21a, 22a, 23a, and then outputted to the optical semiconductor element 13 via the bonding wire 13 a. The inverted signal inputted to the input terminal 30b is transmitted to the second output terminal 31b via the second signal lines 21b, 22b, and 23b, and then outputted to the optical semiconductor element 13 via the bonding wire 13 b. The optical semiconductor element 13 is driven by differential signals input from the output terminals 31a and 31b, and outputs a laser signal to the light transmissive window member 18 side. The optical signal output from the optical semiconductor element 13 is transmitted through the optical fiber 20b.
[ example ]
The ceramic bodies according to examples 1 to 17 and comparative examples 1 to 8 were confirmed for dimensional deviation, adhesion to a firing support plate, warpage, color unevenness, bending strength, and relative dielectric constant.
(preparation of sample)
The raw material powders were mixed in the proportions shown in table 1 to obtain mixed powders.
Polyvinyl butyral, a tertiary amine, and a phthalate (diisononyl phthalate: DINP) as organic components were mixed with the obtained mixed powder, and IPA (isopropyl alcohol) and toluene as solvents were further mixed to prepare a slurry.
The prepared slurry was used to prepare a ceramic tape having a thickness of 50 to 400. Mu.m, by a doctor blade method. The obtained ceramic tape was cut into 50mm in the longitudinal direction by 50mm in the transverse direction, and the cut ceramic tape was arranged on a Mo-made firing support plate, and fired at the firing temperature (highest temperature) shown in table 1 (2 hours). Thus, 100 baked substrates of examples 1 to 17 and comparative examples 1 to 8 were produced, respectively. The temperature variation in the furnace at the firing temperatures shown in table 1 was within ±5℃.
(dimensional deviation)
For examples 1 to 17 and comparative examples 1 to 8, dimensional deviations at the firing temperatures shown in table 1 were measured, respectively. Specifically, the outer dimensions of the fired substrate were measured using a dimension measuring device, the average value and standard deviation thereof were calculated, and the value obtained by dividing the standard deviation by the average value was used as the dimension deviation. In table 1, the case where the dimensional deviation was less than 0.20 was evaluated as "o", the case where the dimensional deviation was 0.20 or more and less than 0.50 was evaluated as "Δ", and the case where the dimensional deviation was 0.50 or more was evaluated as "x".
(attachment to a fired support plate)
The number of fired substrates attached to the fired setter plates and causing defects in the ceramic green bodies was counted for each of examples 1 to 17 and comparative examples 1 to 8. In table 1, 1 sheet was evaluated as "o", 1 to 4 sheets were evaluated as "Δ", and 5 or more sheets were evaluated as "x".
(warp)
For examples 1 to 17 and comparative examples 1 to 8, the average value of the warpage amounts of the fired substrates was measured using a three-dimensional shape measuring instrument. In Table 1, the case where the warpage amount was less than 100 μm was evaluated as "O", the case where the warpage amount was 100 μm or more and less than 200 μm was evaluated as "delta", and the case where the warpage amount was 200 μm or more was evaluated as "X".
(color unevenness)
For examples 1 to 17 and comparative examples 1 to 8, color unevenness of the fired substrate was observed by using a solid microscope. In table 1, the case where there was no color unevenness was evaluated as "o", and the case where there was color unevenness was evaluated as "x".
(intensity)
For examples 1 to 17 and comparative examples 1 to 8, the bending strength of the fired substrate was measured at room temperature according to the 3-point bending strength test of JIS R1601, respectively.
(relative permittivity)
For examples 1 to 17 and comparative examples 1 to 8, the relative dielectric constants of the fired substrates were measured at room temperature and a frequency of 10GHz according to the cavity resonance method of JIS R1641, respectively.
[ Table 1 ]
In examples 1 to 17, dimensional deviation, adhesion to a setter plate, and warpage can be suppressed as compared with comparative examples 1 to 8. The reason for this is that the ceramic body contains Al removed 2 O 3 、SiO 2 MnO and a colorant (Mo and/or Cr) 2 O 3 ) The content of the remaining portions other than the above is suppressed to less than 0.1 mass%, so that the respective components can be uniformly sintered in a state of being dispersed without segregation. Experiments have confirmed that, when MgO and ZrO are added 2 Similar results were obtained also in the case of additives other than CaO and BaO.
In examples 1 to 9 and 12 to 17 in which the content of the remaining portion was 0.07 mass% or less, warpage was further suppressed.
In addition, in examples 1 to 8 and 12 to 17 in which the content of the remaining portion was made smaller than 0.05 mass%, dimensional deviation was further suppressed.
In examples 1 to 5 and 12 to 17 in which the content of the remaining portion was less than 0 mass%, not only dimensional deviation but also adhesion to the setter plate was further suppressed.
In addition, in the process of SiO 2 The ratio of the content of (C) to the content of MnO is set to be more than 0.8In examples 1 to 15 below of 2.1, the bending strength was set to 700MPa or more. Therefore, it is known that 1 to 15 are suitable for ceramic packages (for example, ceramic packages for sealing vibrators or semiconductor elements) requiring strength.
In addition, in the process of SiO 2 In examples 15 to 17, in which the ratio of the content of (c) to the content of MnO was 1.9 or more and 3.5 or less, the relative dielectric constant of 8.0 or more and 9.0 or less and the flexural strength of 390MPa or more were both considered. Therefore, it is understood that examples 15 to 17 are suitable for ceramic packages (for example, ceramic packages for sealing optical semiconductor elements) that require relatively low relative dielectric constants.
[ symbolic description ]
100. First ceramic package
1. Insulating substrate
200. Second ceramic package
6 multilayer circuit board
14a to 14 f.
Claims (8)
1. A ceramic body comprising Al 2 O 3 、SiO 2 And MnO as essential components, and contains Mo and Cr 2 O 3 At least one of them as an arbitrary component,
Al 2 O 3 the content of (C) is 82.0 mass% or more and 95.0 mass% or less,
SiO 2 the content of (C) is 3.0 mass% or more and 8.0 mass% or less,
the MnO content is 2.0 mass% or more and 6.0 mass% or less,
in MoO 3 Mo content and Cr content of the converter 2 O 3 The total content of (2) is 4.0 mass% or less,
the content of the remaining portion is less than 0.1 mass%,
SiO 2 the ratio of the content of (C) to the content of MnO is 1.9 or more and 3.5 or less.
2. The ceramic body of claim 1, wherein,
the ceramic body contains Mo and Cr 2 O 3 At least one of them.
3. The ceramic body according to claim 1 or 2, wherein,
the content of the remaining portion of the ceramic body is less than 0.05 mass%.
4. The ceramic body according to claim 1 or 2, wherein,
the flexural strength of the ceramic body is more than 700 MPa.
5. The ceramic body according to claim 1 or 2, wherein,
the ceramic body has a relative dielectric constant of 8.0 to 9.0 at 10GHz,
the flexural strength of the ceramic body is more than 390 MPa.
6. The ceramic body according to claim 1 or 2, wherein,
the main peak intensity of the X-ray diffraction pattern of the crystal phase of the rest part is relative to Al 2 O 3 The main peak intensity of the X-ray diffraction pattern of the crystalline phase is 0.5 or less.
7. The ceramic body according to claim 1 or 2, wherein,
the porosity of the ceramic body is 3% or less.
8. The ceramic body according to claim 1 or 2, wherein,
the porosity of the ceramic body is 3% to 8%.
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| JP2018-198661 | 2018-10-22 | ||
| JP2018198661 | 2018-10-22 | ||
| CN201980048264.5A CN112601727A (en) | 2018-10-22 | 2019-10-15 | Ceramic body |
| PCT/JP2019/040478 WO2020085148A1 (en) | 2018-10-22 | 2019-10-15 | Ceramic green body |
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| CN201980048264.5A Division CN112601727A (en) | 2018-10-22 | 2019-10-15 | Ceramic body |
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| WO2023243542A1 (en) * | 2022-06-13 | 2023-12-21 | Ｎｇｋエレクトロデバイス株式会社 | Sintered body |
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| JPH09235154A (en) * | 1996-03-04 | 1997-09-09 | Matsushita Electric Ind Co Ltd | Alumina ceramics and production thereof |
| JP4959079B2 (en) * | 2001-09-27 | 2012-06-20 | 京セラ株式会社 | Package for storing semiconductor elements |
| WO2009025156A1 (en) | 2007-08-17 | 2009-02-26 | Murata Manufacturing Co., Ltd. | Ceramic composition, method for producing the same, ceramic substrate and method for producing ceramic green layer |
| JP5093091B2 (en) | 2008-12-26 | 2012-12-05 | 株式会社村田製作所 | Ceramic substrate |
| WO2015141100A1 (en) | 2014-03-19 | 2015-09-24 | 日本碍子株式会社 | Ceramic body and method for producing same |
| WO2015141099A1 (en) | 2014-03-19 | 2015-09-24 | 日本碍子株式会社 | Ceramic body and method for producing same |
| WO2016148217A1 (en) | 2015-03-17 | 2016-09-22 | 日本碍子株式会社 | Wiring substrate |
| CN107406328A (en) * | 2015-03-19 | 2017-11-28 | 衡所华威电子有限公司 | Alumina ceramic of black color powder, alumina ceramic of black color body prepared therefrom and the method for preparing the alumina ceramic of black color body |
| JP6458863B2 (en) | 2015-05-15 | 2019-01-30 | 株式会社村田製作所 | Low temperature sintered ceramic materials, ceramic sintered bodies and ceramic electronic components |
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| CN112601727A (en) | 2021-04-02 |
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