CN116705887A - Absorption film for infrared detector and preparation method thereof - Google Patents
Absorption film for infrared detector and preparation method thereof Download PDFInfo
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- CN116705887A CN116705887A CN202310618616.4A CN202310618616A CN116705887A CN 116705887 A CN116705887 A CN 116705887A CN 202310618616 A CN202310618616 A CN 202310618616A CN 116705887 A CN116705887 A CN 116705887A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
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- 239000002184 metal Substances 0.000 claims abstract description 72
- 230000007704 transition Effects 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000000919 ceramic Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000002131 composite material Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000012780 transparent material Substances 0.000 claims abstract 2
- 230000001681 protective effect Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 11
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- 238000001228 spectrum Methods 0.000 claims description 11
- 230000002457 bidirectional effect Effects 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
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- 238000002329 infrared spectrum Methods 0.000 claims description 3
- 238000011056 performance test Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
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- 229910001751 gemstone Inorganic materials 0.000 description 5
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
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- 208000035473 Communicable disease Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses an absorption film for an infrared detector, which comprises a normal incidence unidirectional absorption film arranged on a chip substrate, infrared transparent material glass or a crystal substrate, wherein the unidirectional absorption film is a multilayer composite film and sequentially comprises a metal high-reflection film layer, a ceramic film layer, a metal transition film layer, a semiconductor material film layer and a medium protection film layer from bottom to top; meanwhile, the preparation method of the absorption film for the infrared detector is disclosed. The invention has excellent spectral absorption and light blocking capacity, and can obtain the best absorption effect required by different detector applications by adjusting the position of a low reflection area and the lowest reflectance value in a short/medium wave infrared band of 1.7-7 mu m.
Description
Technical Field
The invention belongs to the technical field of infrared detection, and particularly relates to an absorption film for an infrared detector and a preparation method thereof.
Background
Along with the continuous progress of infrared technology and the promotion of application requirements, the infrared detector serving as a core component of an infrared system is more and more widely applied, has very important application in the aspects of guidance, tracking, night vision, earth mapping and the like in the military field, and has very wide application prospects in the fields of industrial process monitoring, medical disease diagnosis, infectious disease prevention, natural forecast, environmental disaster monitoring and the like in the national economy field.
The high-performance infrared detector adopts a low-temperature refrigeration Dewar packaging structure, and comprises a semiconductor photosensitive chip, a cold screen, an optical filter, an infrared window, an electrode lead, a transition lead sheet/ring and the like, wherein external stray light from background radiation outside a field of view, internal optical mechanical structure radiation stray light, and the like form optical interference of abnormal transmission stray radiation by reflection and scattering of the chip surface, residual reflection and scattering of the surface of a transmission optical part, the inner wall of a lens barrel and other non-optical surfaces and repeated reflection of the surface of an optical transmission element in a normal optical path, so that the image quality is degraded, even a 'ghost image' is formed, the contrast definition of a target signal is reduced, and the signal to noise ratio and the detection performance are influenced. Suppression of stray radiation light is increasingly becoming a key to high performance detectors to improve detection capability and imaging quality.
For stray light inhibition, on one hand, optical film optimization is performed on the windows, optical filters, chip surfaces and the like of the infrared optical elements for normally transmitting light so as to improve optical transmission performance, reduce surface reflection and the like; on the other hand, due to the unavoidable reflection and scattering of the surface of the optical element, the cold screen, the lead sheet and other non-optical surfaces, particularly such as a metal electrode film on the surface of the detection chip, high reflection of infrared radiation and the like, the effect of absorbing and blocking light is achieved by adopting infrared absorption film treatment on the abnormal transmission light path element part, and the stray radiation returned to the detection photosensitive surface through multiple reflection is reduced, so that the signal-to-noise ratio and detection performance of the low-temperature refrigeration infrared detector are improved.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide an absorbing film for an infrared detector and a method for manufacturing the same, which is to manufacture an infrared absorbing film on a semiconductor material chip or other infrared optical glass or crystal material such as electrode lead sheet/ring of the detector, in a partial area of the abnormal transmission path, so that the area coated with the absorbing film is cut off to the incident light radiation, and the light absorption and the surface reflection are as much as possible, so as to reduce the stray light entering the photosensitive element through the multiple reflection of the surface of the optical/non-optical element in the detector, and improve the signal-to-noise ratio and the detection performance of the detector.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
the absorption film for the infrared detector comprises a normal incidence unidirectional absorption film arranged on a chip substrate, wherein the unidirectional absorption film is a multilayer composite film and sequentially comprises a metal high-reflection film layer, a ceramic film layer, a metal transition film layer, a semiconductor material film layer and a medium protection film layer from bottom to top.
Further, the material of the metal high-reflection film layer is selected from Al, au or Pt; the material of the ceramic membrane layer is selected from Cerm; the material of the metal transition film layer is selected from Cr or Ti; the material of the semiconductor material film layer is selected from Ge or Si; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
Further, the thickness of the metal high-reflection film layer isThe thickness of the ceramic film layer isThe thickness of the metal transition film layer is +.>The thickness of the semiconductor material film layer is +.>The thickness of the dielectric protective film layer is +.>
Further, the lower part of the metal high-reflection film layer is also provided with a dielectric insulating film layer.
Further, the dielectric insulating film layer is made of SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 。
Still further, the dielectric insulating film layer has a thickness of
Further, the chip substrate is made of InSb or HgCdTe materials.
The absorption film for the infrared detector comprises a normal incidence unidirectional absorption film arranged on an infrared transparent glass or crystal material substrate, wherein the unidirectional absorption film is a multilayer composite film and sequentially comprises a metal high-reflection film layer, a ceramic film layer, a metal transition film layer, a semiconductor material film layer and a dielectric protection film layer from bottom to top.
Further, the material of the metal high-reflection film layer is selected from Al, au or Pt; the material of the ceramic membrane layer is selected from Cerm; the material of the metal transition film layer is selected from Cr or Ti; the material of the semiconductor material film layer is selected from Ge or Si; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
Further, the thickness of the metal high-reflection film layer isThe thickness of the ceramic film layer isThe thickness of the metal transition film layer is +.>The thickness of the semiconductor material film layer is +.>The thickness of the dielectric protective film layer is +.>
Further, the lower part of the metal high-reflection film layer is also provided with a dielectric insulating film layer.
Further, the dielectric insulating film layer is made of SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 。
Still further, the dielectric insulating film layer has a thickness of
The infrared bidirectional absorption film is a multilayer composite film and sequentially comprises a dielectric insulation transition film layer, a first semiconductor material film layer, a first metal transition film layer, a first ceramic film layer, a metal high-reflection film layer, a second ceramic film layer, a second metal transition film layer, a second semiconductor material film layer and a dielectric protection film layer from bottom to top.
Further, the dielectric insulating transition film layer is made of SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The materials of the first semiconductor material film layer and the second semiconductor material film layer are selected from Ge or Si; the material of the first metal transition film layer and the material of the second metal transition film layer are selected from Cr or Ti; the materials of the first ceramic membrane layer and the second ceramic membrane layer are selected from Cerm; the material of the metal high-reflection film layer is selected from Al, au or Pt; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
Further, the thickness of the dielectric insulation transition film layer is as followsThe thickness of the first and second semiconductor material film layers is +.>The thickness of the first metal transition film layer and the second metal transition film layer is +.> The thickness of the first and the second ceramic film layers is +.>The thickness of the metal high-reflection film layer is +.> The thickness of the dielectric protective film layer is +.>
The above-mentioned absorbing film for infrared detector is applied in the short/medium wave infrared spectrum region of 1.7-7 μm.
The preparation method of the absorption film for the infrared detector comprises the following steps:
s1, forming a film pattern on a chip substrate, an infrared transparent glass or a crystal material substrate by adopting a photoetching stripping method by taking photoresist as a mask material;
s2, calibrating vacuum evaporation coating of an absorption film: adopting a low-temperature 60-80 ℃ deposition and a quartz crystal control method to monitor the physical thickness of the multilayer film in the step S2;
s3, depositing a multi-layer composite film of the absorption film according to the calibrated multi-layer film thickness and the evaporation parameters in the step S2;
s4, stripping the photoresist of the absorption film in the step S3 to obtain an infrared absorption film;
s5, performing reflection spectrum performance and film layer surface performance test on the infrared absorption film in the step S4 to finish the preparation of the infrared absorption film.
By adopting the technical scheme, the invention has the following advantages:
according to the absorption film for the infrared detector and the preparation method thereof, the full-band infrared transmittance is 0, and the working spectrum band of the response of the detector realizes the light cut-off with low reflection and high absorption; the optical fiber has excellent selective spectral absorption and light blocking capacity, and can obtain the optimal absorption effect required by different detector applications by adjusting the position of a low reflection area and the minimum reflectance value in a short/medium wave infrared band of 1.7-7 mu m.
The infrared absorption film is prepared on the semiconductor material chip or other infrared optical glass or crystal material such as electrode lead sheet/ring of the detector, and on the partial area of the abnormal transmission light path, the infrared absorption film is used for isolating the light in the whole wave band and absorbing the light in the working wave band of the device and the low reflection of the light in the non-photosensitive area of the abnormal light path on the chip and the lead sheet/ring in the device, reducing the reflection (including the high reflection of a metal electrode) of the surface of the infrared absorption film and the multiple reflection among the optical surfaces of the elements such as the chip, the optical filter, the infrared window, the lead sheet and the like to return the infrared stray radiation of the detection photosensitive element, thereby inhibiting the stray light interference of the detector, improving the signal to noise ratio and the detection rate of the low-temperature refrigeration infrared detector, being widely applied to the short wave/medium wave infrared photoelectric detector and having good popularization and application value.
Drawings
FIG. 1 is a schematic diagram of the structure of a one-way infrared absorbing film on a chip substrate of the present invention;
FIG. 2 is a graph of the reflectance of a one-way infrared absorbing film of a chip substrate of the present invention;
FIG. 3 is a schematic diagram showing a front view of an infrared absorbing film on a transition piece gemstone substrate according to the present invention;
FIG. 4 is a schematic top view of the infrared absorbing film of FIG. 3;
FIG. 5 is a graph of the bi-directional reflectance of a bi-directional infrared absorbing film on a transition piece gemstone substrate according to the present invention;
in the figure: 1-an absorbent film; 2-normal incidence light; 3-an infrared absorbing film; 4-a gemstone substrate; 5-a chip mounting area; 6-assembling alignment marks.
Detailed Description
The technical scheme of the invention is further described in detail below with reference to the accompanying drawings and examples.
The absorption film for the infrared detector comprises a normal incidence unidirectional absorption film arranged on a chip substrate, wherein the unidirectional absorption film is a multilayer composite film and sequentially comprises a metal high-reflection film layer, a ceramic film layer, a metal transition film layer, a semiconductor material film layer and a medium protection film layer from bottom to top; the material of the metal high-reflection film layer is selected from Al, au or Pt, and Al is preferred; the material of the ceramic membrane layer is selected from Cerm; the material of the metal transition film layer is selected from Cr or Ti; the material of the semiconductor material film layer is selected from Ge or Si, preferably Ge; the material of the dielectric protective film layer is selected from SiO, siO2, znS or ZnSe.
The thickness of the metal high-reflection film layer is(i.e. 50-100 nm) the thickness of the metal transition film layer is +.>The thickness of the ceramic film layer is->The thickness of the semiconductor material film layer is +.>The thickness of the dielectric protective film layer is +.>
When the chip has insulation requirement on the absorption film, the metalThe lower part of the high-reflection film layer is also provided with a dielectric insulating film layer; the material of the dielectric insulating film layer is selected from SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the dielectric insulating film layer is
When the non-Al metal high-reflection film layer is adopted, a metal transition film layer is added between the insulating dielectric film layer and the metal high-reflection film layer.
The chip substrate is made of InSb or HgCdTe materials.
The absorption film on the chip substrate is other chip surface area except the photosensitive area, the necessary electrode welding wire end, the mark and the like, and covers the electrode metal film and the passivation dielectric film area, as shown in fig. 1. The absorption film is used for absorbing unidirectional normal incidence light, the full-band light is cut off, namely the transmittance is 0, and the reflectivity in the working spectrum band is less than 10%.
The absorption film for the infrared detector comprises a normal incidence unidirectional absorption film arranged on an infrared transparent glass or sapphire crystal material substrate, wherein the unidirectional absorption film is a multilayer composite film and sequentially comprises a metal high-reflection film layer, a ceramic film layer, a metal transition film layer, a semiconductor material film layer and a medium protection film layer from bottom to top.
When insulation is needed, the multilayer composite film sequentially comprises a dielectric insulation film layer, a metal high-reflection film layer, a ceramic film layer, a metal film transition layer, a semiconductor material film layer and a dielectric protection film layer from bottom to top.
The dielectric insulating film layer is made of SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the metal high-reflection film layer is selected from Al, au or Pt, preferably Al; the material of the ceramic membrane layer is selected from Cerm; the material of the metal transition film layer is selected from Cr or Ti; the material of the semiconductor material film layer is selected from Ge or Si, preferably Ge; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
The medium described aboveThe thickness of the insulating film layer isThe thickness of the metal high-reflection film layer is +.> The thickness of the ceramic film layer is->The thickness of the metal transition film layer is +.>The thickness of the semiconductor material film layer is +.>The thickness of the dielectric protective film layer is +.>
The infrared absorption film for the infrared detector comprises an infrared bidirectional absorption film which is arranged on an infrared transparent glass or crystal material substrate, wherein the bidirectional absorption film is a multi-layer composite film and sequentially comprises a dielectric insulation transition film layer, a first semiconductor material film layer, a first metal transition film layer, a first ceramic film layer, a metal high-reflection film layer, a second ceramic film layer, a second metal transition film layer, a second semiconductor material film layer and a dielectric protection film layer from bottom to top; the material of the dielectric insulation transition film layer is selected from SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The materials of the first semiconductor material film layer and the second semiconductor material film layer are selected from Ge or Si, preferably Ge; the material of the first metal transition film layer and the material of the second metal transition film layer are selected from Cr or Ti; the materials of the first ceramic membrane layer and the second ceramic membrane layer are selected from Cerm; the material of the metal high-reflection film layer is selected from Al, au or Pt, preferably Al; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
The thickness of the dielectric insulation transition film layer is as followsThe thickness of the first and second semiconductor material film layers is +.>The thickness of the first metal transition film layer and the second metal transition film layer is +.>The thickness of the first and the second ceramic film layers is +.>The thickness of the metal high-reflection film layer is +.>The thickness of the dielectric protective film layer is
The infrared transparent glass or crystalline material described above serves as a substrate, including but not limited to a complete InSb chip finished into a junction, passivated, metallized, transition lead tab/ring of quartz glass or sapphire crystalline material.
The bidirectional absorption film achieves the effects of bidirectional full-band light cut-off and absorption in the working spectrum band, and the reflectivity in the working spectrum band is less than 16%.
According to the absorption film for the infrared detector, the thicknesses of the ceramic film layer, the semiconductor material film layer and the dielectric protection film layer are adjusted according to the specific working wave band of the detector, and the center of the low-reflection area, namely the wavelength lambda of the lowest reflectivity is adjusted mainly through the increase and decrease of the ceramic film layer and the semiconductor material film layer 0 Is defined by the position of (2) and the lowest reflectance value R min Improving the overall absorption effect in the operating spectral band. Wherein the thickness of the Ge film layer is determined by lambda 0 Wavelength position, thickness increase R min The point long wave direction moves; r is R min Is made of ceramicThe thickness of the ceramic film layer is determined and needs to be equal to the optimal lambda 0 The thicknesses of the semiconductor material films at the locations are matched to obtain R at the lowest reflectance wavelength point min Minimum value, maximum absorption effect is achieved.
The absorption film for infrared detector of the invention is applied in the short/medium wave infrared spectrum range of 1.7-7 μm.
The preparation method of the absorption film for the infrared detector comprises the following steps:
s1, absorption film photoetching
Selecting photoresist as a mask material on a chip substrate, infrared transparent glass or a crystal material substrate, and carrying out graph photoetching of an absorption film by strictly controlling parameters such as coating rotating speed, baking temperature, development time and the like; the embodiment selects AZ462O photoresist, the glue coating rotating speed is 1200-1500 rpm, the rotating time is 20-30 s, the baking temperature is 70-90 ℃, the baking time is 20-40 min, the exposure time is 180-250 s, and the developing time is 40-100 s.
S2, multilayer composite film plating spectrum calibration of absorption film
Adopting a low-temperature 60-80 ℃ deposition and a quartz crystal control method to monitor the physical thickness of the multilayer composite film; wherein, the metal transition film layer, the metal high-reflection film layer and the semiconductor material film layer adopt multi-hole crucible electron beam evaporation, the speed is 0.1-0.3 nm/s, 2-5 nm/s and 0.4-0.7 nm/s; the ceramic film layer adopts a single-hole crucible electron beam evaporation, and the speed is 0.1-0.3 nm/s respectively; the dielectric protective film layer is evaporated by adopting a molybdenum boat or a tantalum boat resistor, and the speed is 2-5 nm/s. The transmittance and the reflectance spectrum curves of the deposited multilayer composite film are tested, the transmittance of the whole wave band is 0, the reflectance spectrum curves are mainly calibrated, and the reflectance in the working spectrum wave band of the detector is as small as possible and corresponds to the optimal absorption effect through thickness adjustment, particularly thickness calibration of a ceramic film layer, a semiconductor material film layer and a medium protection film layer;
s3, plating a multilayer composite film of the absorption film:
depositing a multi-layer composite film of an absorption film according to the calibrated multi-layer film thickness and evaporation parameters in the step S2;
s4, stripping photoresist of the absorption film:
soaking in acetone solution or adding proper amount of heating and ultrasonic to strip if necessary, soaking in methanol for 20-30 s, washing with deionized water for about 30-50 s, and blow-drying with nitrogen gun to form infrared absorption film with film pattern;
s5, performing reflection spectrum performance and film layer surface performance test on the infrared absorption film in the step S5 to finish the preparation of the infrared absorption film.
Example 1
Unidirectional forward absorption film for infrared detector
On the InSb chip substrate of the infrared multielement detector, a unidirectional infrared absorption film with forward incidence is designed and manufactured. The pattern structure of the infrared absorption film is shown in fig. 1, the pattern outer region of the absorption film 1 shown in fig. 1 is plated with a film and then is peeled into a multi-layer film region of the absorption film by photoetching, and the basic film system is as follows:
Sub/SiO (520)/Al (620)/Cerm (1030)/Cr (150)/Ge (750)/SiO (850)/Air, wherein the thickness of each film is shown as a numerical value in "()", and the unit is(angstrom) the Sub, air are the substrate and the incident Air, respectively; for an absorption film without insulation requirements, remove +.>The first SiO layer with the thickness is changed from 6 insulating films to non-insulating 5 films, the forward spectral characteristics (reflection and absorption) are unchanged, the transmittance of the whole wave band is 0, the forward reflection spectrum curves are shown as figure 2, wherein the upper, middle and lower curves are respectively a single-side polished Ge reference sheet, an actually measured shading absorption film and a 0-reference reflectivity curve, R is in the spectral range of 3.7-5.0 μm@2700-2000 cm < -1 > min Near 0, highest reflectance R max =13.8% @3.7 μm, long-wave end r=8.7% @5.0 μm.
Example 2
Bidirectional absorption film for infrared detector
On the transition lead sheet of the jewel material substrate (which is one transition of the chip responding to the electric signal, the infrared absorption film with two-way absorption is designed and manufactured). As shown in figures 3 and 4, the central area of the substrate is the position of the chip mounting area 5 of the detector, and the peripheral area is plated with a bidirectional absorption effect. The basic film system is as follows:
Sub/SiO (520)/Ge (690)/Cr (140)/Cerm (930)/Al (620)/Cerm (930)/Cr (150)/Ge (690)/SiO (850)/Air, wherein the values in "()" are the thickness of each film in units of(angstrom) the Sub, air are a gemstone substrate and incident Air, respectively; the full-band spectral transmittance of the absorption film is 0, the reflection spectrum curves are shown in figure 5, wherein the upper curve and the lower curve are respectively the single-sided polished Ge reference sheet and the 0-standard reflectivity curve, the blue curve and the green curve are respectively the actually measured reflectivity curves of the shading absorption film in the forward direction (film surface side) and the reverse direction (film surface back side), the forward direction R positive min is close to 0 and the highest reflectivity R is in the spectral interval of 3.4-4.8 mu m@2941-2083 cm < -1 > Positive max =16% @4.8 μm, short-wave end r=10% @3.4 μm; reverse R Inverse min ＝8％＞R Positive min R is generally the same except that r=10% at 3.4 μm at the short-wave end Reverse-rotation ＞R Positive direction This is because the measured reflectance in the reverse incidence increases the bare surface reflection on the back side of the substrate absorption film compared with the forward incidence, and the reflectance is higher, so that the actual absorption effect is not great for the low refractive index substrates of precious stones and quartz; if the substrate is made of other materials with high refractive index, in order to avoid the influence of high reflection on the reverse direction on the back film side of the substrate, an anti-reflection film is additionally coated on the back side, so that the light incident into the absorption film is increased, and the reverse absorption effect is improved.
The present invention is not limited to the above-mentioned embodiments, but can be modified in various ways without departing from the spirit and scope of the invention.
Claims (10)
1. An absorption film for infrared detectors, which is characterized in that: the solar cell comprises a normal incidence unidirectional absorption film arranged on a chip substrate, infrared transparent material glass or a crystal substrate, wherein the unidirectional absorption film is a multilayer composite film and sequentially comprises a metal high-reflection film layer, a ceramic film layer, a metal transition film layer, a semiconductor material film layer and a medium protection film layer from bottom to top.
2. The infrared detector absorption film according to claim 1, wherein: the lower part of the metal high-reflection film layer is also provided with a dielectric insulating film layer.
3. The infrared detector absorption film according to claim 1, wherein: the material of the metal high-reflection film layer is selected from Al, au or Pt; the material of the ceramic membrane layer is selected from Cerm; the material of the metal transition film layer is selected from Cr or Ti; the material of the semiconductor material film layer is selected from Ge or Si; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
4. The infrared detector absorption film according to claim 1, wherein: the thickness of the metal high-reflection film layer isThe thickness of the ceramic film layer is->The thickness of the metal transition film layer is +.>The thickness of the semiconductor material film layer is +.>The thickness of the dielectric protective film layer is +.>
5. The infrared detector absorption film according to claim 2, characterized in that: the dielectric insulating film layer is made of SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the dielectric insulating film layer is
6. An absorption film for infrared detectors, which is characterized in that: the infrared bidirectional absorption film comprises an infrared bidirectional absorption film which is arranged on an infrared transparent glass or crystal material substrate, wherein the bidirectional absorption film is a multilayer composite film and sequentially comprises a dielectric insulation transition film layer, a first semiconductor material film layer, a first metal transition film layer, a first ceramic film layer, a metal high-reflection film layer, a second ceramic film layer, a second metal transition film layer, a second semiconductor material film layer and a dielectric protection film layer from bottom to top.
7. The infrared detector absorption film according to claim 6, wherein: the material of the dielectric insulating transition film layer is selected from SiO, siO 2 、Ti 3 O 5 、Ta 2 0 5 ZnS, znSe or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The materials of the first semiconductor material film layer and the second semiconductor material film layer are selected from Ge or Si; the material of the first metal transition film layer and the material of the second metal transition film layer are selected from Cr or Ti; the materials of the first ceramic membrane layer and the second ceramic membrane layer are selected from Cerm; the material of the metal high-reflection film layer is selected from Al, au or Pt; the material of the dielectric protective film layer is selected from SiO, siO 2 ZnS or ZnSe.
8. The infrared detector absorption film according to claim 6, wherein: the thickness of the dielectric insulation transition film layer isThe thickness of the first and second semiconductor material film layers is +.>The thickness of the first metal transition film layer and the second metal transition film layer is +.>The thickness of the first and the second ceramic film layers is +.>The thickness of the metal high-reflection film layer is +.>The thickness of the dielectric protective film layer is +.>
9. The infrared detector absorption film according to any one of claims 1 to 8, characterized in that: it is applied in the short/medium wave infrared spectrum interval of 1.7-7 mu m.
10. A method for producing an absorbing film for an infrared detector as claimed in any one of claims 1 to 9, characterized by: which comprises the following steps:
s1, forming a film pattern on a chip substrate, an infrared transparent glass or a crystal material substrate by adopting a photoetching stripping method by taking photoresist as a mask material;
s2, calibrating vacuum evaporation coating of an absorption film: adopting a low-temperature 60-80 ℃ deposition and a quartz crystal control method to monitor the physical thickness of the multilayer film in the step S2;
s3, depositing a multi-layer composite film of the absorption film according to the calibrated multi-layer film thickness and the evaporation parameters in the step S2;
s4, stripping the photoresist of the absorption film in the step S3 to obtain an infrared absorption film;
s5, performing reflection spectrum performance and film layer surface performance test on the infrared absorption film in the step S4 to finish the preparation of the infrared absorption film.
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