CN218240456U - Anti-electromagnetic interference optical filter for infrared temperature measurement and infrared detector thereof - Google Patents
Anti-electromagnetic interference optical filter for infrared temperature measurement and infrared detector thereof Download PDFInfo
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- CN218240456U CN218240456U CN202222959657.3U CN202222959657U CN218240456U CN 218240456 U CN218240456 U CN 218240456U CN 202222959657 U CN202222959657 U CN 202222959657U CN 218240456 U CN218240456 U CN 218240456U
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Abstract
The utility model relates to an anti-electromagnetic interference's infrared light filter for temperature measurement and infrared detector thereof. The optical filter includes: the filter layer is arranged on the substrate layer. The filter layers are respectively deposited on the upper side and the lower side of the substrate layer to form two interference film systems; the filter layer is made of a light-transmitting material with high transmission at a waveband of 5.5-14 mu m; the electromagnetic shielding layer is made of a light-transmitting conductive material which is highly transmissive in a wave band of 3-16 mu m and can shield electromagnetic interference signals of the corresponding wave band; the motor shielding layers are respectively deposited on the upper side and the lower side of the substrate layer, and each electromagnetic shielding layer is overlapped with the substrate layer and one of the filter layers according to a specific arrangement mode. Compared with the prior art, the anti-electromagnetic interference optical filter for infrared temperature measurement has stronger electromagnetic shielding capability, is beneficial to the use of an infrared detector in a complex electromagnetic environment, and improves the stability and accuracy of non-contact temperature measurement application.
Description
Technical Field
The utility model relates to an optical filter for infrared temperature measurement especially relates to an anti-electromagnetic interference's optical filter for infrared temperature measurement, still relates to an infrared detector who adopts this anti-electromagnetic interference's optical filter for infrared temperature measurement.
Background
The infrared filter is used as a window and a core component of the infrared detector and mainly has two functions. Firstly, the infrared filter needs to selectively transmit the spectrum according to different applications of the infrared detector. Taking non-contact temperature detection as an example, the infrared filter used is usually a long-wave pass filter, which needs to transmit infrared radiation in a wavelength range of more than 5500nm and cut off infrared radiation in a wavelength range of less than 5500nm within a wavelength range of 400-14000nm and 5500nm as a central wavelength.
The infrared radiation is sent by surveying the target object, and the characteristic absorption wave bands such as filtration steam and carbon dioxide in the atmosphere that can be fine through the light filter promptly disturb the wave band for infrared detector can not receive the interference. The infrared radiation within the wavelength range of more than 5500nm, especially the wave band of 8-14 μm corresponding to the life ray, has higher transmittance, so that the infrared detector has higher responsivity. The infrared radiation passing through the optical filter is sensed by the detector chip, and an electric signal corresponding to the light intensity is output, so that the temperature and the change of the detected target object are obtained. Secondly, the infrared filter is used as an interface between the environment and the detector chip, so that the detector chip needs to be well sealed, the chip is protected from being damaged, meanwhile, the detector chip is also guaranteed not to be interfered by the outside, and the stability of the detector is improved.
Along with the complication of the electromagnetic environment in the modern society, the requirements of strong electromagnetic shielding and high infrared transmission of middle and far infrared wave bands are put forward for an infrared filter window in the upgrading and upgrading of an optical system. However, the anti-electromagnetic interference capability of the existing infrared filter hardly exists, the requirement of market development is difficult to meet, and the stability and the accuracy of the infrared detector in a complex electromagnetic environment cannot be ensured.
SUMMERY OF THE UTILITY MODEL
Based on this, it is necessary to be weaker to the anti-electromagnetic interference ability of light filter for infrared temperature measurement among the prior art to the stability of restriction infrared detector when using in the electromagnetic environment of complicacy and the technical problem of accuracy, the utility model provides an anti-electromagnetic interference's light filter for infrared temperature measurement and infrared detector thereof.
The utility model discloses an anti-electromagnetic interference's light filter for infrared temperature measurement, it includes: the filter layer is arranged on the substrate layer. The filter layers are respectively deposited on the upper side and the lower side of the substrate layer to form two interference film systems; the filter layer is made of a light-transmitting material with high transmission at a waveband of 5.5-14 mu m; the electromagnetic shielding layer is made of a light-transmitting conductive material which is highly transmissive in a wave band of 3-16 mu m and can shield electromagnetic interference signals of the corresponding wave band; the motor shielding layers are respectively deposited on the upper side and the lower side of the substrate layer, and each electromagnetic shielding layer is overlapped with the substrate layer and one of the filter layers according to a specific arrangement mode.
As a further improvement of the scheme, the upper side and the lower side of the substrate layer are both polishing processing structures.
As a further improvement of the scheme, the substrate of the base layer is monocrystalline silicon or monocrystalline germanium, and the thickness of the substrate is 550 +/-50 microns.
As a further improvement of the above scheme, the electromagnetic shielding layer and the filter layer are both provided with two positions and symmetrically distributed on the upper side and the lower side of the substrate layer; and the electromagnetic shielding layer and the filter layer which are positioned on the same side of the substrate layer correspond to each other.
As a further improvement of the above solution, each of the filter layers is formed by alternately stacking a plurality of high refractive index film layers and a corresponding number of low refractive index film layers.
As a further improvement of the above solution, the electromagnetic shielding layer is deposited at the interface between the corresponding filter layer and the substrate layer, that is, the filter layer is indirectly disposed on the substrate layer through the electromagnetic shielding layer in the middle.
As a further improvement of the above solution, the electromagnetic shielding layer is deposited on a side of the corresponding filter layer facing away from the substrate layer, that is, the filter layer is directly disposed on the substrate layer.
As a further improvement of the scheme, the electromagnetic shielding layer adopts an ultrathin metal layer structure with the thickness of 3 nm.
As a further improvement of the scheme, the electromagnetic shielding layer adopts a dielectric thin film structure with the thickness of 50 nm.
The utility model discloses still disclose an infrared detector, it includes: the optical filter adopts any one of the anti-electromagnetic interference optical filters for infrared temperature measurement.
Compared with the prior art, the utility model discloses a technical scheme has following beneficial effect:
1. compared with the prior art, the anti-electromagnetic interference optical filter for infrared temperature measurement is additionally provided with the transparent conductive film on the basis of the conventional infrared temperature measurement optical filter film system, so that the optical filter has stronger electromagnetic shielding capability while the infrared light transmission of which the response waveband is 5.5-14 mu m is not influenced, the use of an infrared detector in a complex electromagnetic environment is facilitated, and the stability and the accuracy of non-contact temperature measurement application are improved.
2. The electromagnetic interference resistant electromagnetic shielding layer of the infrared temperature measurement optical filter can be an ultrathin metal layer or a dielectric film prepared by adopting a magnetron sputtering deposition process, has good compatibility with an optical filtering film system and a substrate part, is simple in process, can meet the requirement of batch production, is stable in performance, and meets the requirement of the infrared temperature detection sensor on the electromagnetic interference resistance.
3. The beneficial effect of the infrared detector is the same as that of the anti-electromagnetic interference optical filter for infrared temperature measurement, and the description is omitted here.
Drawings
Fig. 1 is a schematic structural diagram of an infrared temperature measurement optical filter for resisting electromagnetic interference in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of an infrared temperature measuring optical filter for resisting electromagnetic interference according to embodiment 2 of the present invention;
fig. 3 is a graph showing the final performance actual measurement of the electromagnetic interference resistant optical filter for infrared temperature measurement according to embodiment 2 of the present invention;
fig. 4 is a schematic flow chart of a method for manufacturing an optical filter according to embodiment 3 of the present invention.
Description of the main elements
101. A base layer; 200. a filter layer; 201. a high refractive index film layer; 202. a low refractive index film layer; 301. and an electromagnetic shielding layer.
The present invention is further described in detail with reference to the drawings and the detailed description.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
It will be understood that when an element is referred to as being "mounted on" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. When an element is referred to as being "secured to" another element, it can be directly secured to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "or/and" includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1, the present embodiment provides an anti-electromagnetic interference filter for infrared temperature measurement, including: a substrate layer 101, a filter layer 200, and an electromagnetic shield layer 301.
The base layer 101 may be a double-side polished single crystal silicon or single crystal germanium substrate. In this embodiment, the base layer 101 (substrate portion) uses single crystal Si with a size of Φ 50.8 × 0.3mm as a base plate; silicon is polished on both sides, the thickness is 550 +/-50 mu m, and the crystal orientation is <100>.
The filter layer 200 is deposited on the upper and lower sides of the substrate layer 101 to form two interference film systems. The filter layer 200 is made of a light-transmitting material with high transmission in a wavelength band of 5.5 μm to 14 μm. The filter film system can be formed by alternately depositing and stacking Ge as the high refractive index film layer 201 and ZnS as the low refractive index film layer 202, and is divided into two interference film systems A and B. The high refractive index film 201 may be selected. The low index film layer 202 may be Ge.
The electromagnetic shielding layer 301 is made of a light-transmitting conductive material which has high transmission at a wave band of 3-16 μm and can shield electromagnetic interference signals of a corresponding wave band. The electromagnetic shield layer 301 is composed of an ultra-thin metal layer or a dielectric thin film. The electromagnetic shielding layers 301 are respectively deposited on the upper and lower sides of the substrate layer 101, and each electromagnetic shielding layer 301 overlaps the substrate layer 101 and one of the filter layers 200 according to a specific arrangement manner.
The ultra-thin metal layer may be Cr or Ni, and when the electromagnetic shielding layer 301 is formed using the ultra-thin metal layer, the thickness of the ultra-thin metal layer may be about 3 nm.
Bi can be selected as the dielectric thin film 2 Se 3-X 、Bi 2 Te 3-X Or PbSe 1-X When the electromagnetic shield layer 301 is formed of a dielectric thin film, the thickness of the dielectric thin film may be about 50 nm. In this embodiment, bi is preferable as the electromagnetic shielding portion 2 Se 3-X 、Bi 2 Te 3-X Or PbSe 1-X The dielectric film material is deposited on the double surfaces of the Si substrate by adopting a magnetron sputtering preparation process, the thickness of the film is controlled to be about 50nm, and if a Cr or Ni ultrathin metal layer is adopted as an electromagnetic shielding part, the thickness of the film is controlled to be about 3 nm. In addition, the performance of the dielectric film is superior to that of the gold ultrathin metal layer, and the skilled person can adaptively select the dielectric film according to actual requirements.
The electromagnetic shield layer 301 may be arranged in any one of three positions:
(1) The electromagnetic shielding layer 301 is deposited at the interface between the corresponding filter layer 200 and the substrate layer 101.
(2) The electromagnetic shielding layer 301 is deposited at the interface between the corresponding filter layer 200 and the air.
(3) The electromagnetic shield layer 301 is deposited between any adjacent high refractive film layer and low refractive film layer in the corresponding filter layer 200.
In this embodiment, the electromagnetic shielding layer 301 is arranged at the position (1) described above. In other words, the two interference film systems A and B are deposited on the surface of the Si substrate plated with the electromagnetic shielding film, and the structural formulas of the two interference film systems are as follows.
The A film system is Sub/0.818 (0.5HL0.5H) 6 0.2L 0.6(0.5HL0.5H) 6 0.2L/Air, deposited on one surface of the Si substrate plated with the electromagnetic shielding film.
The B film system is Sub/0.44 (0.5HL0.5H) 6 0.1L 0.33(0.5HL0.5H) 6 0.1L/Air, deposited on the other surface of the Si substrate plated with the electromagnetic shielding film.
The meanings of the symbols in the A and B film systems are respectively as follows: sub is a Si substrate plated with an electromagnetic shielding film, air is Air,h and L represent a Ge (high refractive index material) film layer and a ZnS (low refractive index material) film layer having optical thicknesses of 1/4 wavelength, respectively, with a center wavelength of λ =5500nm,1H = (4 n) H d)/λ；1L＝(4n L d) The number in the structural formula is the thickness coefficient of the film layer, and the index in the structural formula is the cycle number of the film coating of the film stack.
In addition, the Ge and ZnS thin films of the filtering film system part in the embodiment are prepared by adopting a vacuum evaporation thin film deposition method; ge is evaporated by electron beam at a deposition rate of
ZnS is selected from porous molybdenum boat by electrothermal evaporation at a deposition rate of
Vacuum degree of starting vapor deposition of 1.0X 10 -3 Pa, deposition temperature 130 ℃. As to how to evaporate specifically, evaporation by an electron gun and evaporation-resistant evaporation coating by heat evaporation are conventional techniques known to those skilled in the art and will not be described in detail herein.
Example 2
Referring to fig. 2, the present embodiment provides an anti-electromagnetic interference filter for infrared temperature measurement, where the materials of the filter are different, and the arrangement of the film layers of the filter is different from that of the filter provided in embodiment 1.
In the embodiment, the substrate part adopts single crystal Ge with the size of phi 50.8 multiplied by 0.3mm as a substrate; the germanium is double-side polished to be 550 +/-50 mu m thick.
The filtering film system is formed by alternately depositing and stacking Ge as a high-refractive-index film layer 201 and ZnS as a low-refractive-index film layer 202, is divided into two interference film systems A and B, is deposited on the surface of a Ge substrate, and has the following structural formulas:
the membrane A is Sub/0.818 (0.5HL0.5H) 6 0.2L 0.6(0.5HL0.5H) 6 0.2L/Air, deposited on one surface of the Ge substrate;
the B film system is Sub/0.44 (0.5HL0.5H) 6 0.1L 0.33(0.5HL0.5H) 6 0.1L/Air deposited on the other surface of the Ge substrate.
The meanings of the symbols in the A and B film systems are respectively as follows: sub is Ge substrate, air, H and L represent Ge (high refractive index material layer) and ZnS (low refractive index material layer) film layers with optical thickness of 1/4 wavelength respectively, and center wavelength is lambda =5500nm,1H = (4 n) H d)/λ；1L＝(4n L d) The number in the structural formula is the thickness coefficient of the film layer, and the index in the structural formula is the cycle number of the film coating of the film stack.
Of course, in other embodiments, the electromagnetic shielding layer 301 may also be deposited between the stacked high refractive index film layer and the low refractive index film layer 202, and accordingly, the manufacturing process and the manufacturing cost may also be changed.
In the optical filter provided in the embodiment, the Ge and ZnS thin films of the optical filter film system part are prepared by a vacuum thermal evaporation thin film deposition method; ge is deposited by electron beam evaporation at a deposition rate of
ZnS is electrically evaporated with porous molybdenum boat at a deposition rate of
The degree of vacuum at the beginning of vapor deposition was 1.0X 10 -3 Pa, deposition temperature 130 ℃. Since the specific techniques of evaporation using electron gun evaporation and evaporation-resistant evaporation coating are conventional techniques known to those skilled in the art, they will not be described in detail herein.
The electromagnetic shielding part is preferably Bi 2 Se 3-X 、Bi 2 Te 3-X Or PbSe 1-X A dielectric thin film material; respectively depositing the film on the juncture of the filtering film system A and the filtering film system B and air by adopting a magnetron sputtering preparation process, and controlling the thickness of the film to be about 50 nm; if the Cr or Ni ultrathin metal layer is used as the electromagnetic shielding part, the thickness of the metal layer is controlled to be about 3 nm.
In order to verify the performance of the optical filter provided above, in this example, the prepared optical filter was tested by using an IS 50 fourier infrared spectrometer manufactured by Thermo Fisher Nicolet, usa. The final performance spectrum curve of the optical filter is shown in fig. 3, and the specific performance parameters are as follows:
1. center wavelength λ =5500nm;
2. transmission region of 5500 nm-14000 nm T avg ＝72.25％；
3. Cut-off region 1500 nm-5500 nm T avg ＝0.15％。
According to above specific performance parameter can see out, the utility model provides an optical filter still has good selective permeability to the spectrum under the ability that possesses anti electromagnetic interference, can effectively see through 5500nm ~ 14000 nm's infrared radiation, ends to see through the infrared radiation that is less than 5500nm wavelength range.
Example 3
Referring to fig. 4, the present embodiment provides a method for manufacturing an optical filter, which is used to manufacture any one of the above electromagnetic interference resistant infrared temperature measurement optical filters. The preparation method comprises the following steps:
s1, providing a substrate made of a specific material and with a specific size as a base layer 101, and performing double-side polishing.
And S2, respectively depositing the filter layer 200 and the electromagnetic shielding layer 301 outwards on two sides of the substrate layer 101 according to a preset arrangement sequence and a preset coating condition, and further obtaining the optical filter.
Wherein the filter layer 200 is deposited by vacuum thermal evaporation. The electromagnetic shielding layer 301 is subjected to thin film deposition by adopting a magnetron sputtering preparation process. Regarding the selection of the material and the size of the substrate layer 101, and the arrangement of the substrate layer 101, the filter layer 200, and the electromagnetic shielding layer 301, the plating conditions, and other parameters, embodiments 1 and 2 are provided, and are not described herein again. By the above method steps, depending on the change of actual parameters, the optical filter in example 1 or example 2 can be prepared.
Example 4
The embodiment provides an infrared detector which comprises an optical filter. The filter can be the filter for electromagnetic interference resistance infrared thermometry as provided in example 1 or 2. The infrared detector has good electromagnetic interference resistance by adopting the optical filter, is suitable for being used in a complex electromagnetic environment, and improves stability and accuracy.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-described embodiments only represent some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, without departing from the concept of the present invention, several variations and modifications can be made, which all fall within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. An anti-electromagnetic interference filter for infrared temperature measurement, comprising:
a base layer; and
the filter layers are respectively deposited on the upper side and the lower side of the substrate layer to form two interference film systems;
the filter layer is characterized by being prepared from a high-transmission light-transmitting material in a wave band of 5.5-14 mu m;
the optical filter further includes:
the electromagnetic shielding layer is prepared from a light-transmitting conductive material which is highly transmissive in a wave band of 3-16 mu m and can shield electromagnetic interference signals of a corresponding wave band; the electromagnetic shielding layers are respectively deposited on the upper side and the lower side of the substrate layer, and each electromagnetic shielding layer is overlapped with the substrate layer and one of the filter layers according to a specific arrangement mode.
2. The anti-electromagnetic interference infrared temperature measurement filter according to claim 1, wherein both upper and lower sides of the substrate layer are polished structures.
3. The anti-electromagnetic interference infrared temperature measuring filter according to claim 2, wherein the substrate layer is monocrystalline silicon or monocrystalline germanium and has a thickness of 550 ± 50 μm.
4. The anti-electromagnetic interference infrared temperature measurement optical filter according to claim 1, wherein the electromagnetic shielding layer and the filter layer are disposed at two positions and symmetrically distributed on the upper and lower sides of the substrate layer; and the electromagnetic shielding layer and the filter layer which are positioned on the same side of the substrate layer correspond to each other.
5. The electromagnetic interference resistant infrared thermometry optical filter of claim 4, wherein each of the filter layers is composed of a plurality of high refractive index film layers and a corresponding number of low refractive index film layers stacked alternately.
6. The anti-electromagnetic interference infrared thermometry optical filter of claim 1, wherein the electromagnetic shielding layer is deposited at the interface of the filter layer and the substrate layer, i.e. the filter layer is indirectly disposed on the substrate layer through the electromagnetic shielding layer.
7. The anti-electromagnetic interference infrared temperature measuring filter according to claim 1, wherein the electromagnetic shielding layer is deposited on a side of the filter layer facing away from the substrate layer, i.e., the filter layer is directly disposed on the substrate layer.
8. The anti-electromagnetic interference infrared temperature measuring optical filter according to claim 1, wherein the electromagnetic shielding layer is an ultra-thin metal layer with a thickness of 3 nm.
9. The anti-electromagnetic interference infrared temperature measuring filter according to claim 1, wherein the electromagnetic shielding layer is a dielectric thin film structure having a thickness of 50 nm.
10. An infrared detector, comprising:
an optical filter;
the filter for anti-electromagnetic interference infrared temperature measurement according to any one of claims 1 to 9 is used as the filter.
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| CN202222959657.3U CN218240456U (en) | 2022-11-07 | 2022-11-07 | Anti-electromagnetic interference optical filter for infrared temperature measurement and infrared detector thereof |
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| CN202222959657.3U CN218240456U (en) | 2022-11-07 | 2022-11-07 | Anti-electromagnetic interference optical filter for infrared temperature measurement and infrared detector thereof |
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