CN116705668A - Closed encapsulation curing mechanism and encapsulation curing method for formic acid system - Google Patents
Closed encapsulation curing mechanism and encapsulation curing method for formic acid system Download PDFInfo
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- CN116705668A CN116705668A CN202310963843.0A CN202310963843A CN116705668A CN 116705668 A CN116705668 A CN 116705668A CN 202310963843 A CN202310963843 A CN 202310963843A CN 116705668 A CN116705668 A CN 116705668A
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- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 title claims abstract description 120
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 235000019253 formic acid Nutrition 0.000 title claims abstract description 60
- 230000007246 mechanism Effects 0.000 title claims abstract description 26
- 238000005538 encapsulation Methods 0.000 title claims description 26
- 238000001723 curing Methods 0.000 title abstract description 26
- 230000009467 reduction Effects 0.000 claims abstract description 82
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000001816 cooling Methods 0.000 claims abstract description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 38
- 238000004806 packaging method and process Methods 0.000 claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 28
- 238000003466 welding Methods 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 29
- 238000000889 atomisation Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 16
- 238000007711 solidification Methods 0.000 claims description 15
- 230000008023 solidification Effects 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 14
- 238000007664 blowing Methods 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000000110 cooling liquid Substances 0.000 claims description 3
- 238000006722 reduction reaction Methods 0.000 abstract description 66
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The application provides a formic acid system closed type packaging curing mechanism and a packaging curing method, which are used for packaging a frame of a discrete device and a chip set positioned on the frame in a welding way, and comprise a bottom plate and an upper cover covered above the bottom plate, wherein a plurality of heating plates are sequentially arranged on the bottom plate from left to right, the bottom plate is sequentially divided into a preheating area, a reduction area, a vacuum area and a cooling area from left to right, and by arranging the independent vacuum area and the reduction area, the mixed gas of formic acid and nitrogen is limited in the closed area for use and reaction in a high-temperature section of welding, so that the mode of completely supplying air in an integral furnace possibly existing in the prior art is replaced, on one hand, the danger or pollution caused by the leakage of the mixed gas is avoided, the safety performance of formic acid is ensured, and on the other hand, the operation concentration and the reaction activity of the mixed gas on the reduction reaction of the device are improved by using the closed small space, and the packaging curing quality is improved.
Description
Technical Field
The application relates to the field of discrete device packaging, in particular to a formic acid system closed type packaging and curing mechanism and a packaging and curing method.
Background
In the packaging process of discrete devices, the prior packaging technology mostly adopts a rosin solder paste heating melting welding process, and nitrogen is usually adopted as protective gas in the welding process to avoid oxidation of the surface of the devices. However, because the oxide exists on the surface of the device before packaging and welding, oxidation reaction can occur between the device and oxygen left in the environment during packaging, poor wetting of a welding interface can be caused, and the oxide in the welding area becomes impurities in the welding area, finally, poor welding cavity or poor physical connection performance of the welding is caused.
Therefore, using formic acid as an auxiliary medium in the reaction, limiting the surface oxide generation is sometimes applied in the equipment in existing packaging devices. However, the flash point of formic acid is only 68.9 ℃, explosion and combustion are easy to occur in the air, and certain pollution is easy to be caused by diffusion in the air, and the operation temperature of encapsulation and solidification can be up to 400 ℃, so that how to safely apply formic acid in the encapsulation and solidification process of discrete devices is a problem to be solved in the field.
Disclosure of Invention
The application aims to solve the technical problems that: in order to solve the problem of oxidation of devices in encapsulation and solidification and improve the safety of a formic acid system in encapsulation and solidification, the application provides a closed encapsulation and solidification mechanism and an encapsulation and solidification method of the formic acid system to solve the problem.
The technical scheme adopted for solving the technical problems is as follows: a formic acid system closed packaging and solidifying mechanism is used for packaging a frame of a discrete device and a chip set positioned on the frame in a welding way, and comprises a bottom plate and an upper cover covered above the bottom plate, wherein a plurality of heating plates are sequentially arranged on the bottom plate left and right, the bottom plate is sequentially divided into a preheating area, a reduction area, a vacuum area and a cooling area from left to right, and a closed space is formed between the upper cover and the bottom plate; the heating plate is provided with a transfer groove, a transfer rod is arranged in the transfer groove, and the transfer rod stretches into the lower part of the frame and upwards supports the frame and the chip to transfer among the preheating zone, the reduction zone, the vacuum zone and the cooling zone; suction ports are arranged on the upper cover and positioned on two sides of the preheating zone; a nitrogen inlet for blowing nitrogen is arranged above the preheating zone and the cooling zone.
The reduction zone comprises a reduction bottom bin and a reduction top bin, the reduction top bin is covered on the reduction bottom bin and forms a sealed reduction zone with the reduction bottom bin, a heating plate of the reduction zone is arranged in the reduction zone, a reduction air inlet pipe is arranged on the reduction bottom bin, and mixed gas of nitrogen and formic acid is introduced into the reduction air inlet pipe.
The vacuum area comprises a vacuum bottom bin and a vacuum top bin, the vacuum top bin is covered on the vacuum bottom bin and forms a sealed vacuum area with the vacuum bottom bin, a heating plate of the vacuum area is arranged in the vacuum area, a vacuumizing tube and a vacuum breaking tube are arranged on the vacuum bottom bin, the vacuumizing tube is communicated with a vacuum pump, and the vacuum breaking tube is communicated with mixed gas of nitrogen and formic acid.
Further: windows are arranged on the left side and the right side of the upper cover, and air curtain air outlets for blowing nitrogen are arranged at the windows; the transfer bar extends through the window into the base plate.
Further: the cooling area comprises a plurality of cooling plates which are arranged in turn left and right, and flowing cooling liquid is arranged in the cooling plates; placing the packaged frame and chip on the cooling plate; the heating plate and the cooling plate are provided with transfer grooves, the top surface heights of the reduction bottom bin and the vacuum bottom bin are lower than the bottom height of the transfer grooves, and the transfer rod extends into the transfer grooves.
Further: the packaging curing mechanism further comprises an acid supply mixing device, wherein the acid supply mixing device comprises a container body, a partition board arranged in the container body and an atomization mounting plate arranged on the upper part of the partition board; a formic acid injection port is arranged below the partition plate on the container body; an atomization vibration exciter is arranged on the atomization mounting plate, the bottom of the atomization vibration exciter is connected with a capillary flow guide pipe, and the capillary flow guide pipe penetrates through the partition plate and is immersed in formic acid solution of the container body; the nitrogen gas injection port and the mixed gas outlet are arranged above the partition plate, the mixed gas outlet is respectively communicated with the reduction area and the vacuum area, and the mixed gas outlet is provided with a pipeline heater.
Further: the vacuum top bin and the reduction top bin are respectively provided with an opening and closing mechanism for driving the vacuum top bin and the reduction top bin to move up and down, and the opening and closing mechanism comprises a guide rod which is vertically arranged, a guide sleeve which is fixed on an upper cover and is sleeved outside the guide rod, a vertically installed driving rod and an opening and closing cylinder for driving the driving rod to move up and down; the bottoms of the guide rod and the driving rod are fixedly connected with the vacuum top bin or the reduction top bin.
The formic acid system closed packaging and solidifying method is characterized in that the formic acid system closed packaging and solidifying mechanism is utilized to package discrete devices, and the assembled discrete devices are sequentially subjected to the packaging procedures of preheating, reduction, vacuum evacuation and cooling, wherein the preheating, the frame and the chip are gradually heated to 170-180 ℃ in a nitrogen environment, and solidification is continued for one working beat in the temperature region; then the temperature is increased to 270-280 ℃ in the final curing temperature area of the process, and the curing lasts for one working beat in the temperature area; reducing, namely heating the frame and the chip to 330-340 ℃ in a mixed gas environment of nitrogen and formic acid, and continuously operating at one beat; vacuum evacuating, cooling the frame and the chip to 280-290 ℃ in a negative pressure environment of-40 Kpa to-60 Kpa, and curing in the temperature area for one working beat; cooling, namely cooling the frame and the chip which are solidified to be below 60 ℃; the duty cycle is 60 seconds to 75 seconds.
The closed type packaging curing mechanism and the curing method of the formic acid system have the beneficial effects that by arranging the independent vacuum area and the independent reduction area, the mixed gas of formic acid and nitrogen is limited to be used and reacted in the closed area at the high-temperature section of welding, so that a mode of unified and comprehensive gas supply in an integral furnace possibly existing in the prior art is eliminated, on one hand, the danger or pollution caused by the leakage of the mixed gas is avoided, the safety performance of the formic acid is ensured, and on the other hand, the operation concentration and the reaction activity of the mixed gas on the reduction reaction of devices are improved by using the closed type small space, and the packaging curing quality is improved.
Drawings
The application will be further described with reference to the drawings and examples.
FIG. 1 is a schematic structural view of a formic acid system closed encapsulation curing mechanism of the present application;
FIG. 2 is a schematic diagram showing the detailed structures of the reduction zone and the vacuum zone in the closed encapsulation curing mechanism;
FIG. 3 is a schematic view of the structure of an acid supply mixing device;
fig. 4 is a process schematic of the encapsulation curing method.
In the figure, 1, a bottom plate, 2, an upper cover, 3, a heating plate, 4, a preheating zone, 5, a reduction zone, 6, a vacuum zone, 7, a cooling zone, 8, a suction port, 9, a nitrogen gas inlet, 10, a reduction bottom bin, 11, a reduction top bin, 12, a reduction zone, 13, a reduction gas inlet pipe, 14, a vacuum bottom bin, 15, a vacuum top bin, 16, a vacuum zone, 17, a vacuum breaking pipe, 18, a vacuum pumping pipe, 19, a window, 20, an air curtain blowing port, 21, a transfer rod, 22, a cooling plate, 23, a container body, 24, a partition plate, 25, an atomization mounting plate, 26, a formic acid injection port, 27, an atomization vibration exciter, 28, a capillary guide pipe, 29, a nitrogen injection port, 30, a mixed gas outlet, 31, a pipeline heater, 32, a guide rod, 33, a guide sleeve, 34, a driving rod, 35 and an opening and closing cylinder.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application. On the contrary, the embodiments of the application include all alternatives, modifications and equivalents as may be included within the spirit and scope of the appended claims.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art. Furthermore, in the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and further implementations are included within the scope of the preferred embodiment of the present application in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
As shown in fig. 1 to 3, the application provides a formic acid system closed packaging curing mechanism, which is used for packaging a frame of a discrete device and a chip set positioned on the frame in a welding way, and comprises a bottom plate 1 and an upper cover 2 covered above the bottom plate 1, wherein a plurality of heating plates 3 are sequentially arranged on the bottom plate 1 left and right, the bottom plate 1 is sequentially divided into a preheating zone 4, a reduction zone 5, a vacuum zone 6 and a cooling zone 7 from left to right, and a closed space is formed between the upper cover 2 and the bottom plate 1; the heating plate 3 is provided with a transfer groove, a transfer rod 21 is arranged in the transfer groove, the transfer rod 21 stretches into the lower part of the frame and upwards supports the frame and the chip to transfer among the preheating zone 4, the reduction zone 5, the vacuum zone 6 and the cooling zone 7; on the upper cover 2, suction ports 8 are arranged at two sides of the preheating zone 4; a nitrogen inlet 9 for blowing nitrogen is provided above the preheating zone 4 and the cooling zone 7.
The reduction zone 5 comprises a reduction bottom bin 10 and a reduction top bin 11, the reduction top bin 11 is covered on the reduction bottom bin 10 and forms a sealed reduction zone 12 with the reduction bottom bin 10, the heating plate 3 of the reduction zone 5 is arranged in the reduction zone 12, the reduction bottom bin 10 is provided with a reduction air inlet pipe 13, and the reduction air inlet pipe 13 is filled with mixed gas of nitrogen and formic acid.
The vacuum area 6 comprises a vacuum bottom bin 14 and a vacuum top bin 15, the vacuum top bin 15 is covered on the vacuum bottom bin 14 and forms a sealed vacuum area 16 with the vacuum bottom bin 14, the heating plate 3 of the vacuum area 6 is arranged in the vacuum area 16, a vacuumizing tube 18 and a vacuumizing tube 17 are arranged on the vacuum bottom bin 14, the vacuumizing tube 18 is communicated with a vacuum pump, and the vacuumizing tube 17 is communicated with mixed gas of nitrogen and formic acid.
When the frame and the chip are subjected to assembly welding packaging, the whole packaging curing process is performed in a nitrogen protection atmosphere environment, so that the frame or the chip can be effectively prevented from being oxidized due to contact with oxygen, and the physical connection performance and the electrical performance of the device after welding packaging are ensured.
However, since the frame is mostly made of metallic copper, the surface of the frame and the surface of the chip are often provided with oxides, and impurities in the bonding region may be formed due to the presence of the oxides, so that voids in the bonding region may generate or deteriorate the physical connection performance and the electrical performance of the bonding region.
Under the basic condition of the existing nitrogen shielded welding, two working procedures of formic acid reduction and vacuum evacuation are arranged in the device, and in order to improve the effectiveness of the reduction reaction and ensure the safety of formic acid in the use process, the device is respectively provided with a closed reduction zone 5 and a vacuum zone 6.
The reduction zone 5 and the vacuum zone 6 are respectively independent two closed areas, wherein the reduction zone 5 is mainly used for fusion welding of a frame and a chip after preheating, is a main flow area for realizing physical connection, and mixed gas of formic acid and nitrogen is introduced into a closed reduction area 12 formed by combining a reduction bottom bin 10 and a reduction top bin 11, so that on one hand, the oxygen content in a small area can be reduced, on the other hand, the formic acid and the nitrogen are fully contacted with a reaction interface in the reduction zone 5, the reduction reaction is positive under the influence of high welding temperature, and the generation of oxide of the reaction interface can be prevented, so that the welding effect is improved.
The vacuum area 6 is mainly formed by combining the vacuum bottom bin 14 and the vacuum top bin 15 to form a sealed vacuum area 16, the vacuum area 16 is not mutually influenced with the reduction area 12, on one hand, the vacuum area 16 can be emptied outwards through the vacuumizing tube 18 to create a negative pressure environment of the vacuum area 16, bubbles and the like in a welding reaction area are promoted to escape, the generation of cavities is limited, meanwhile, after the emptying operation, the mixed gas of nitrogen and formic acid is adopted to carry out vacuum breaking, the residual oxide at a welding reaction interface can be further reduced, and the formation of new oxides at the reaction interface and the surface of a frame and a chip is avoided. Through experiments, the device subjected to formic acid treatment in the vacuum area 6 can be welded with no residue on the surface, the subsequent procedure of dimethylbenzene or organic solution cleaning can be omitted, and the device can be transferred into plastic package.
In the enclosed space formed by the upper cover 2 and the bottom plate 1, the nitrogen inlet 9 is always in a state of blowing the enclosed space in the packaging process, the whole enclosed space is a positive pressure environment formed by nitrogen, and meanwhile, the suction port 8 works to positively treat volatile matters generated by packaging devices of the preheating zone 4, so that the impurity content of the air atmosphere of the enclosed space is controlled. The reduction zone 5 and the vacuum zone 6 are also in the closed space, and when the reduction zone 5 and the vacuum zone 6 are opened and closed, the mixed gas of the nitrogen and the formic acid escaping from the closed space formed by the upper cover 2 and the bottom plate 1 is still in the closed space and is collected and treated by the suction port 8 in time, so that the formic acid is prevented from escaping, and the closed acid supply environment ensures that the formic acid is always in the environment with low oxygen content, so that the safety performance is greatly improved.
Windows 19 are arranged on the left side and the right side of the upper cover 2, and air curtain air outlets 20 for blowing nitrogen are arranged at the windows 19; a moving rod 21 is arranged in the window 19 in a penetrating way, the moving rod 21 stretches into the lower part of the frame and upwards supports the frame and the chip to move between the preheating zone 4, the reduction zone 5, the vacuum zone 6 and the cooling zone 7. The cooling zone 7 comprises a plurality of cooling plates 22 which are arranged in turn left and right, and flowing cooling liquid is arranged in the cooling plates 22; the frame and chip completed package are placed on the cooling plate 22; the heating plate 3 and the cooling plate 22 are provided with transfer grooves, the top surfaces of the reduction bottom bin 10 and the vacuum bottom bin 14 are lower than the bottom height of the transfer grooves, and the transfer rods 21 extend into the transfer grooves.
The use of the transfer bar 21 to transfer the package cured frame and chips is largely disclosed in the prior application of this company in the art and is not described in detail herein. In order to create a reliable closed space environment by the upper cover 2 and the bottom plate 1, the air curtain air blowing port 20 is arranged in the area where the transfer rod 21 and the upper cover 2 are inserted, and the air curtain air blowing port 20 is matched with the positive pressure environment of the closed space of the upper cover 2 and the bottom plate 1, so that external oxygen can be further prevented from entering the closed space by the air curtain air blowing port 20, the oxygen content of the closed space is effectively reduced, and the welding quality of encapsulation and solidification is ensured.
The packaging and curing mechanism further comprises an acid supply mixing device, wherein the acid supply mixing device comprises a container body 23, a partition plate 24 arranged in the container body 23 and an atomization mounting plate 25 arranged at the upper part of the partition plate 24; a formic acid injection port 26 is provided in the container body 23 below the partition plate 24; an atomization exciter 27 is arranged on the atomization mounting plate 25, a capillary flow guide pipe 28 is connected to the bottom of the atomization exciter 27, and the capillary flow guide pipe 28 penetrates through the partition plate 24 to be immersed in the formic acid solution of the container body 23; above the partition plate 24, a nitrogen inlet 29 and a mixture outlet 30 are provided, the mixture outlet 30 communicates with the reduction region 12 and the vacuum region 16, respectively, and a pipe heater 31 is provided in the mixture outlet 30.
The application has larger difference from the prior art, the prior art mainly adopts the evaporative mixed acid supply, namely, formic acid is heated to boiling in a heating container and then is introduced with nitrogen to be mixed with the formic acid for acid supply, the technology has the problems that the integral safety of the acid supply mixing device is poor, the mixing ratio of nitrogen and formic acid steam is difficult to effectively control and influence the packaging quality, and meanwhile, the evaporative mixed acid supply needs to be stopped when a solution is filled and can be continuously supplied after waiting for boiling again after new acid solution is injected, so that the packaging rhythm is paused, and the packaging efficiency is reduced.
According to the technical scheme, the atomization of formic acid is completed by adopting the atomization vibration exciter 27, the atomization vibration exciter 27 is a common liquid excitation atomization device in the prior art, and the atomization vibration exciter 27 is a liquid excitation atomization device in the prior art, so that a specific structure, namely a principle, is not repeated, and the atomization vibration exciter is directly selected by a person skilled in the art. According to the technical scheme, the atomization vibration exciter 27 and the formic acid solution are separated, the solution in the container body 23 is communicated with the atomization vibration exciter 27 through the capillary flow guide pipe 28, the stability of an atomization process is guaranteed, meanwhile, shutdown operation is not needed when the solution is added, when the concentration mixing ratio of nitrogen and the atomized formic acid is needed to be adjusted, the working quantity and the working power of the atomization vibration exciter 27 are only needed to be adjusted, compared with the evaporative acid supply mixing, the continuous production can be more accurate, and the packaging quality and the packaging efficiency are improved.
The vacuum top bin 15 and the reduction top bin 11 are respectively provided with an opening and closing mechanism for driving the vacuum top bin 15 and the reduction top bin 11 to move up and down, and the opening and closing mechanism comprises a guide rod 32 which is vertically arranged, a guide sleeve 33 which is fixed on the upper cover 2 and is sleeved outside the guide rod 32, a driving rod 34 which is vertically arranged and an opening and closing cylinder 35 for driving the driving rod 34 to move up and down; the bottoms of the guide rod 32 and the driving rod 34 are fixedly connected with the vacuum top bin 15 or the reduction top bin 11. The guide sleeve 33 and the guide rod 32 can play a guide role in the ascending and descending processes of the vacuum top bin 15 and the reduction top bin 11, so that the stability of movement is ensured, and meanwhile, the opening and closing operation is performed by adopting the opening and closing cylinder 35, so that the control is convenient.
As shown in fig. 4, in the method for closed encapsulation and solidification of the formic acid system, the assembled discrete devices are subjected to encapsulation procedures of preheating, reduction, vacuum evacuation and cooling in sequence, wherein the preheating, the frame and the chip are gradually heated to 170-180 ℃ in a nitrogen environment, and solidification lasts for one working beat in the temperature region; then the temperature is increased to 270-280 ℃ in the final curing temperature area of the process, and the curing lasts for one working beat in the temperature area; reducing, namely heating the frame and the chip to 330-340 ℃ in a mixed gas environment of nitrogen and formic acid, and continuously operating at one beat; vacuum evacuating, cooling the frame and the chip to 280-290 ℃ in a negative pressure environment of-40 Kpa to-60 Kpa, and curing in the temperature area for one working beat; cooling, namely cooling the frame and the chip which are solidified to be below 60 ℃; the duty cycle is 60 seconds to 75 seconds.
In the scheme, four steps of packaging and curing links are mainly performed, wherein in the first step, in the preheating process, the frame, the chip and the solder paste are soaked, a working beat is maintained at the temperature of 170-180 ℃ on a temperature platform, the method is mainly used for reducing thermal stress impact, meanwhile, each soldering flux in the solder paste is beneficial to generating an active reaction, the wettability and the surface energy of the surface of a weldment are increased, and the solder paste melted later can be well wetted on the surface of the weldment. At the end of the preheating process, the device solder temperature is raised to 270-280 ℃, at which temperature the solder paste melts and a wetting reaction occurs, starting to produce an intermetallic layer.
In the reduction process, the highest operation temperature link in the encapsulation solidification process is adopted, in the process, the welding interface is fully melted in the formic acid atmosphere, the surface of the weldment is fully wetted, and the formic acid quickly reduces the welding area and the oxide on the surface in time, so that the reliability and stability of welding combination are ensured.
In the vacuum emptying procedure, the device is emptied and gradually cooled in a negative pressure environment, and bubbles and the like in a welding area escape rapidly, so that the low cavity rate of encapsulation and solidification is ensured. Gradually cooling the device after vacuum evacuation, and starting solidification of the welding area, so that encapsulation and solidification are completed.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Claims (6)
1. The utility model provides a formic acid system closed encapsulation curing mechanism for with the frame of discrete device and the chip group welding encapsulation that is located on the frame, its characterized in that: the device comprises a bottom plate (1) and an upper cover (2) covered above the bottom plate (1), wherein a plurality of heating plates (3) are sequentially arranged left and right on the bottom plate (1), the bottom plate (1) is sequentially divided into a preheating zone (4), a reduction zone (5), a vacuum zone (6) and a cooling zone (7) from left to right, and a closed space is formed between the upper cover (2) and the bottom plate (1); the heating plate (3) is provided with a transfer groove, a transfer rod (21) is arranged in the transfer groove, the transfer rod (21) stretches into the lower part of the frame and upwards supports the frame and the chip to transfer among the preheating zone (4), the reduction zone (5), the vacuum zone (6) and the cooling zone (7); on the upper cover (2), suction ports (8) are arranged at two sides of the preheating zone (4); a nitrogen inlet (9) for blowing nitrogen is arranged above the preheating zone (4) and the cooling zone (7);
the reduction zone (5) comprises a reduction bottom bin (10) and a reduction top bin (11), the reduction top bin (11) is covered on the reduction bottom bin (10) and forms a sealed reduction zone (12) with the reduction bottom bin (10), a heating plate (3) of the reduction zone (5) is arranged in the reduction zone (12), a reduction air inlet pipe (13) is arranged on the reduction bottom bin (10), and mixed gas of nitrogen and formic acid is introduced into the reduction air inlet pipe (13);
the vacuum area (6) comprises a vacuum bottom bin (14) and a vacuum top bin (15), the vacuum top bin (15) is covered on the vacuum bottom bin (14) and forms a sealed vacuum area (16) with the vacuum bottom bin (14), a heating plate (3) of the vacuum area (6) is arranged in the vacuum area (16), a vacuumizing tube (18) and a vacuumizing tube (17) are arranged on the vacuum bottom bin (14), the vacuumizing tube (18) is communicated with a vacuum pump, and the vacuumizing tube (17) is communicated with a mixed gas of nitrogen and formic acid.
2. A formic acid system closed encapsulation curing mechanism as defined by claim 1 wherein: windows (19) are arranged on the left side and the right side of the upper cover (2), and air curtain air outlets (20) for blowing nitrogen are arranged at the windows (19); the transfer rod (21) protrudes through the window (19) into the base plate (1).
3. A formic acid system closed encapsulation curing mechanism as defined by claim 2 wherein: the cooling area (7) comprises a plurality of cooling plates (22) which are arranged in sequence left and right, and flowing cooling liquid is arranged in the cooling plates (22); placing the packaged frame and chip on the cooling plate (22); the heating plate (3) and the cooling plate (22) are provided with transfer grooves, the top surfaces of the reduction bottom bin (10) and the vacuum bottom bin (14) are lower than the bottom height of the transfer grooves, and the transfer rod (21) stretches into the transfer grooves.
4. A formic acid system closed encapsulation curing mechanism as defined by claim 1 wherein: the packaging curing mechanism further comprises an acid supply mixing device, wherein the acid supply mixing device comprises a container body (23), a partition plate (24) arranged in the container body (23) and an atomization mounting plate (25) arranged on the upper part of the partition plate (24); a formic acid injection port (26) is arranged below the partition plate (24) on the container body (23); an atomization vibration exciter (27) is arranged on the atomization mounting plate (25), a capillary flow guide pipe (28) is connected to the bottom of the atomization vibration exciter (27), and the capillary flow guide pipe (28) penetrates through the partition plate (24) to be immersed in formic acid solution of the container body (23); a nitrogen injection port (29) and a mixed gas outlet (30) are arranged above the partition plate (24), the mixed gas outlet (30) is respectively communicated with the reduction area (12) and the vacuum area (16), and a pipeline heater (31) is arranged at the mixed gas outlet (30).
5. A formic acid system closed encapsulation curing mechanism as defined by claim 1 wherein: the vacuum top bin (15) and the reduction top bin (11) are respectively provided with an opening and closing mechanism for driving the vacuum top bin (15) and the reduction top bin (11) to move up and down, and the opening and closing mechanism comprises a guide rod (32) which is vertically arranged, a guide sleeve (33) which is fixed on the upper cover (2) and is sleeved outside the guide rod (32), a vertically installed driving rod (34) and an opening and closing cylinder (35) for driving the driving rod (34) to move up and down; the bottoms of the guide rod (32) and the driving rod (34) are fixedly connected with the vacuum top bin (15) or the reduction top bin (11).
6. A method for closed encapsulation and solidification of a formic acid system is characterized by comprising the following steps: packaging discrete devices by using the formic acid system closed type packaging and curing mechanism as claimed in claim 1, wherein the assembled discrete devices are sequentially subjected to the packaging procedures of preheating, reduction, vacuum evacuation and cooling, wherein
Preheating, wherein the frame and the chip are gradually heated to 170-180 ℃ in a nitrogen environment, and curing is continued for one working beat in the temperature region; then the temperature is increased to 270-280 ℃ in the final curing temperature area of the process, and the curing lasts for one working beat in the temperature area;
reducing, namely heating the frame and the chip to 330-340 ℃ in a mixed gas environment of nitrogen and formic acid, and continuously operating at one beat;
vacuum evacuating, cooling the frame and the chip to 280-290 ℃ in a negative pressure environment of-40 Kpa to-60 Kpa, and curing in the temperature area for one working beat;
cooling, namely cooling the frame and the chip which are solidified to be below 60 ℃;
the duty cycle is 60 seconds to 75 seconds.
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