CN116683278B - Heat sink and chip packaging structure and method for improving COD threshold of semiconductor laser - Google Patents
Heat sink and chip packaging structure and method for improving COD threshold of semiconductor laser Download PDFInfo
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- CN116683278B CN116683278B CN202310957327.7A CN202310957327A CN116683278B CN 116683278 B CN116683278 B CN 116683278B CN 202310957327 A CN202310957327 A CN 202310957327A CN 116683278 B CN116683278 B CN 116683278B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000035882 stress Effects 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 4
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Semiconductor Lasers (AREA)
Abstract
The invention relates to a chip packaging structure and a chip packaging method, in particular to a heat sink for improving the COD threshold value of a semiconductor laser, and the chip packaging structure and the chip packaging method are used for solving the defects that a high-power semiconductor laser is easy to generate optical catastrophe damage due to high injection current and high output power, and further the improvement of the output power and the reliability of the device is severely restricted. According to the chip packaging method for improving the COD threshold of the semiconductor laser, from the design point of a device packaging structure, heat sink materials with better thermal expansion coefficients and heat conduction performance and better chip materials are selected, and packaging stresses with different sizes and types are introduced into the front cavity surface and the back cavity surface of the chip by adopting a method of designing the thermal expansion coefficients and the heat conduction performance of the heat sink materials in a split area, so that the gap width of the front cavity surface of the chip, which is easy to generate COD, is increased, the absorption of light is reduced, and the temperature of the front cavity surface of the semiconductor laser is reduced.
Description
Technical Field
The invention relates to a chip packaging structure and a chip packaging method, in particular to a heat sink for improving the COD threshold value of a semiconductor laser, and a chip packaging structure and a chip packaging method.
Background
The high-power semiconductor laser is widely applied to the fields of infrared illumination, laser printing, laser ranging, material processing, laser pumping and the like by virtue of the advantages of high electro-optic conversion efficiency, high optical output power, simple power supply mode, wide wavelength range, low cost, small device size, high reliability and the like. With the gradual increase of laser output power and the expansion of applications, the problem of reliability is also increasingly emphasized. And optical catastrophic damage (COD) of a semiconductor laser is a major factor affecting the maximum optical output power and lifetime of a device, which is a phenomenon of device damage caused by excessive absorption or nonlinear effects of an optical element when the semiconductor laser is operated.
The occurrence of COD is divided into two cases, namely, the instant COD is one of the situations, namely, after the cavity surface of the semiconductor laser absorbs quite high light radiation emitted by the inside of the resonant cavity, a larger temperature rise is generated to melt the cavity surface of the semiconductor laser; another COD occurs under the condition of low light emission power of the laser, and the COD threshold value is continuously reduced due to the fact that the defects of the cavity surface of the semiconductor laser are increased in the long-term operation process of the laser, and finally the laser is reduced to the rated power of the laser, so that the device is invalid.
There are many specific factors that lead to the generation of COD in high-power semiconductor lasers, and a large optical power density near the facet of the semiconductor laser is one of the important reasons for this. The semiconductor laser is to realize high power output, generally adopts a long cavity structure, but the gain characteristic of the long cavity can cause the optical power density of the cavity surface of the semiconductor laser to be larger, especially the front cavity surface of the semiconductor laser has larger light intensity, so COD is more likely to occur at the position. In addition, the front cavity surface of the semiconductor laser is positioned at the edge of the heat sink, so that the heat dissipation is poor, and the front cavity surface of the semiconductor laser is one of the reasons for easily generating COD. Another important reason is that surface states, which form dangling bonds at the cavity surface of the semiconductor laser when the semiconductor chip is cleaved, generate intrinsic defects, i.e., surface states, which rapidly react with air or adsorb other impurities to further increase the density of the surface states if not cleaved under ultra-high vacuum, and these surface states introduce additional energy levels into the forbidden band, become carrier trapping centers when current is injected, and cause carriers to diffuse into the cavity surface region of the semiconductor laser. The carriers accumulated in the cavity surface area of the semiconductor laser can absorb photon energy in the optical gain process to generate electron hole pairs, non-radiative recombination is induced to occur, the temperature at the cavity surface of the semiconductor laser is increased, the light emergent efficiency of the laser can be reduced, the surface defects of the resonant cavity can be diffused into the laser, the aging of the laser is accelerated, more serious, the temperature increase can lead to band gap shrinkage of a local material of the cavity surface of the semiconductor laser, photon absorption is enhanced, the cavity surface of the semiconductor laser is induced to generate higher temperature rise, malignant circulation is continued, COD is finally generated, and the cavity surface of the semiconductor laser is melted and burned.
Disclosure of Invention
The invention aims to solve the defects that the high-power semiconductor laser is easy to generate optical catastrophe damage due to high injection current and high output power, and further severely restricts the improvement of the output power and the reliability of the device, and provides a heat sink, a chip packaging structure and a method for improving the COD threshold of the semiconductor laser.
In order to solve the defects existing in the prior art, the invention provides the following technical solutions:
the heat sink for improving the COD threshold of the semiconductor laser is used for welding with a chip and is characterized in that: the chip comprises a front part and a rear part which respectively correspond to a front cavity surface and a rear cavity surface of the chip, wherein the thermal expansion coefficients of the front part and the rear part are respectively B1 and B2, the thermal expansion coefficients of the chip are A, and any one of relations 1 to 3 is satisfied among B1, B2 and A:
relationship 1: b1, B2 are both greater than A, and (B1-A) > (B2-A);
relationship 2: b1 and B2 are smaller than A, and (A-B1) < (A-B2);
relationship 3: b1 is greater than A and B2 is less than A.
Further, the front part and the rear part are sequentially connected.
Further, the difference between the front thermal expansion coefficient B1 and the chip thermal expansion coefficient a, and the difference between the back thermal expansion coefficient B2 and the chip thermal expansion coefficient a are not more than 3 ppm/K.
Meanwhile, the invention provides a chip packaging structure for improving the COD threshold of a semiconductor laser, which is characterized in that: the semiconductor laser comprises a chip and a heat sink, wherein the heat sink is used for improving the COD threshold value of the semiconductor laser; the chip is soldered to the heat sink and mounted on a chip carrier in the packaged device.
Further, the front part and the rear part are sequentially connected.
Further, the difference between the front thermal expansion coefficient B1 and the chip thermal expansion coefficient a, and the difference between the back thermal expansion coefficient B2 and the chip thermal expansion coefficient a are not more than 3 ppm/K.
Further, the chipPrepared with GaAs, corresponding thermal expansion coefficient a=6.5 ppm/K; the heat sink adopts Cu X W Y Prepared, x+y=100.
Further, the front part adopts Cu 20 W 80 Preparation, corresponding thermal expansion coefficient B1=8.5 ppm/K, the rear portion using Cu 10 W 90 The corresponding coefficient of thermal expansion b2=6.4 ppm/K was prepared.
The invention also provides a chip packaging method for improving the COD threshold of the semiconductor laser, which is based on the chip packaging structure for improving the COD threshold of the semiconductor laser and is characterized by comprising the following steps:
step 1, mounting a chip on a chip seat in a packaging device, butting an electrode, and connecting the electrode of the chip with a pin or a bonding pad of the packaging device;
step 2, selecting a material for preparing a heat sink according to the thermal expansion coefficient of the chip, wherein the difference value between the thermal expansion coefficient of the material for preparing the heat sink and the thermal expansion coefficient A of the chip is 0-3 ppm/K;
step 3, preparing a front part and a rear part respectively, and connecting the front part and the rear part to form a heat sink;
step 4, placing the heat sink obtained in the step 3 in a packaging device, and welding the heat sink and a chip;
and 5, sealing the cover or the top of the packaged device to finish packaging.
Further, in step 1, the chip is prepared from GaAs, and the corresponding thermal expansion coefficient a=6.5 ppm/K;
in step 3, the front part adopts Cu 20 W 80 Preparation, corresponding thermal expansion coefficient B1=8.5 ppm/K, rear portion using Cu 10 W 90 The corresponding coefficient of thermal expansion b2=6.4 ppm/K was prepared.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the chip packaging method for improving the COD threshold of the semiconductor laser, from the design point of a device packaging structure, a heat sink material with a better thermal expansion coefficient and a better heat conduction performance is selected, and the thermal expansion coefficient and the heat conduction performance of the heat sink material are designed in a split area mode, so that packaging stresses with different sizes and types are introduced into the front cavity surface and the back cavity surface of the chip, the gap width of the front cavity surface of the chip, which is easy to generate COD, is increased, the absorption of light is reduced, the temperature of the front cavity surface of the semiconductor laser is reduced, and the COD threshold of the semiconductor laser is improved, and the performance of the semiconductor laser is improved.
(2) The chip packaging method for improving the COD threshold of the semiconductor laser eliminates the defects of complex secondary epitaxial growth process, high cost, expensive vacuum cleavage coating machine equipment and the like of the traditional method by designing a packaging structure.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a chip package structure for increasing COD threshold of a semiconductor laser according to the present invention.
The reference numerals are explained as follows: 1-chip, 11-chip front cavity surface, 12-chip back cavity surface; 2-heat sink, 21-front, 22-back.
Detailed Description
The invention is further described below with reference to the drawings and exemplary embodiments.
In the packaging process of the semiconductor laser, the packaging stress introduced by the difference of the thermal expansion Coefficients (CTE) of the chip, the solder and the heat sink can change the band gap width of the active region, because the thermal expansion coefficients of the chip, the solder and the heat sink are not matched in the process of reducing the temperature of the solder to room temperature when the chip is welded on the heat sink by the solder, the contraction degrees of the chip, the solder and the heat sink are different, and stress is generated, so that the band gap width of the active region is changed.
In view of the above problems, the invention provides a chip packaging structure for improving the COD threshold of a semiconductor laser, which is based on the principle that for a chip 1 with a certain epitaxial structure, copper-tungsten alloy is selected as a material of a heat sink 2 in the packaging process of the chip 1, and the front cavity surface of the semiconductor laser is a part which is easier to be damaged by COD, so that the electric conduction, the thermal conductivity and the thermal expansion coefficient of the copper-tungsten alloy are changed by adjusting the copper-tungsten mass ratio of the copper-tungsten alloy in the front part of the heat sink 2, so that the front cavity surface 11 of the chip introduces compressive strain in the packaging process compared with the rear cavity surface 12 of the chip, the band gap width of the front cavity surface 11 of the chip is increased, the front cavity surface temperature of the semiconductor laser is reduced, and finally the aim of improving the COD threshold of the semiconductor laser is achieved.
Referring to fig. 1, a chip package structure for improving a COD threshold of a semiconductor laser according to the present invention includes a chip 1 and a heat sink 2 welded to the chip 1.
Chip 1 was prepared using GaAs with a corresponding coefficient of thermal expansion a=6.5 ppm/K. The areas of the chip 1 corresponding to the front cavity surface and the rear cavity surface of the semiconductor laser are respectively a front cavity surface 11 and a rear cavity surface 12.
In the structural design of the heat sink 2, the structure of the heat sink 2 can be divided into two areas, namely a front part 21 and a rear part 22 corresponding to the front cavity surface 11 and the rear cavity surface 12 of the chip. The front portion 21 and the rear portion 22 are connected in this order, and have thermal expansion coefficients B1 and B2, respectively.
Since the stress distribution of the chip 1 along the semiconductor laser cavity length direction is: the stress of the front cavity surface 11 of the chip is larger than the stress of the back cavity surface 12 of the chip, and when the thermal expansion coefficient of the material of the heat sink 2 is larger than that of the material of the chip 1, the packaging stress introduced by the chip 1 is compressive stress, and when the thermal expansion coefficient of the material of the heat sink 2 is smaller than that of the material of the chip 1, the packaging stress introduced by the chip 1 is tensile stress, so that any one of the relations 1 to 3 is satisfied among B1, B2 and A:
relationship 1: b1, B2 are both greater than A, and (B1-A) > (B2-A);
relationship 2: b1 and B2 are smaller than A, and (A-B1) < (A-B2);
relationship 3: b1 is greater than A, and B2 is less than A;
the heat sink 2 adopts Cu X W Y Prepared, x+y=100. Wherein the front part 21 adopts Cu 20 W 80 Preparation, corresponding b1=8.5 ppm/K, rear 22 with Cu 10 W 90 The preparation, corresponding to b2=6.4 ppm/K, satisfies the above relationship 3.
The packaging method of the chip packaging structure for improving the COD threshold of the semiconductor laser comprises the following steps:
step 1, mounting a chip 1 on a chip seat in a packaging device, butting an electrode, and connecting the electrode of the chip 1 with a pin or a bonding pad of the packaging device;
step 2, selecting Cu according to the thermal expansion coefficient of the chip 1 of 6.5 ppm/K X W Y As a material for preparing the heat sink 2; x+y=100;
the difference between the thermal expansion coefficient of the material for preparing the heat sink 2 and the thermal expansion coefficient A of the chip 1 is not more than 3 ppm/K;
step 3, preparing a front part 21 and a rear part 22 respectively, and connecting the front part 21, the rear part 22 and the heat sink 2 to form the heat sink 2;
the coefficients of thermal expansion of the front and rear portions 21, 22 are B1, B2, respectively; the front part 21 adopts Cu 20 W 80 Preparation, corresponding b1=8.5 ppm/K, rear 22 with Cu 10 W 90 Preparation, corresponding b2=6.4 ppm/K;
step 4, placing the heat sink 2 obtained in the step 3 in a packaging device, and then welding the heat sink 2 with the chip 1;
and 5, sealing the cover or the top of the packaged device to finish packaging.
Claims (10)
1. The heat sink for improving the COD threshold of the semiconductor laser is used for being welded with a chip (1), and is characterized in that: the chip comprises a front part (21) and a rear part (22) which respectively correspond to a front cavity surface (11) and a rear cavity surface (12) of the chip, wherein the thermal expansion coefficients of the front part (21) and the rear part (22) are respectively B1 and B2, the thermal expansion coefficient of the chip (1) is A, and any one of relations 1 to 3 is satisfied among B1, B2 and A:
relationship 1: b1, B2 are both greater than A, and (B1-A) > (B2-A);
relationship 2: b1 and B2 are smaller than A, and (A-B1) < (A-B2);
relationship 3: b1 is greater than A and B2 is less than A.
2. The heat sink for increasing the COD threshold of a semiconductor laser of claim 1, wherein: the front part (21) and the rear part (22) are connected in sequence.
3. The heat sink for increasing the COD threshold of a semiconductor laser according to claim 1 or 2, wherein: the difference between the thermal expansion coefficient B1 of the front part (21) and the thermal expansion coefficient A of the chip (1) and the difference between the thermal expansion coefficient B2 of the rear part (22) and the thermal expansion coefficient A of the chip (1) are not more than 3 ppm/K.
4. The utility model provides an improve chip packaging structure of semiconductor laser COD threshold value which characterized in that: the semiconductor laser comprises a chip (1) and a heat sink (2), wherein the heat sink (2) adopts the heat sink for improving the COD threshold value of the semiconductor laser according to claim 1; the chip (1) is soldered to a heat sink (2) and mounted on a chip carrier in a packaged device.
5. The chip packaging structure for improving the COD threshold of a semiconductor laser according to claim 4, wherein: the front part (21) and the rear part (22) are connected in sequence.
6. The chip packaging structure for improving the COD threshold of a semiconductor laser according to claim 5, wherein: the difference between the thermal expansion coefficient B1 of the front part (21) and the thermal expansion coefficient A of the chip (1) and the difference between the thermal expansion coefficient B2 of the rear part (22) and the thermal expansion coefficient A of the chip (1) are not more than 3 ppm/K.
7. The chip packaging structure for improving the COD threshold of a semiconductor laser according to claim 6, wherein: the chip (1) is prepared from GaAs, and the corresponding thermal expansion coefficient A=6.5 ppm/K; the heat sink (2) adopts Cu X W Y Prepared, x+y=100.
8. The chip packaging structure for improving the COD threshold of a semiconductor laser according to claim 6, wherein: the front part (21) adopts Cu 20 W 80 Preparation, corresponding thermal expansion coefficient b1=8.5 ppm/K, the rear portion (22) being Cu 10 W 90 The corresponding coefficient of thermal expansion b2=6.4 ppm/K was prepared.
9. A chip packaging method for increasing the COD threshold of a semiconductor laser, based on the chip packaging structure for increasing the COD threshold of a semiconductor laser according to claim 4, comprising the steps of:
step 1, mounting a chip (1) on a chip seat in a packaging device, butting with an electrode, and connecting the electrode of the chip (1) with a pin or a bonding pad of the packaging device;
step 2, selecting a material for preparing a heat sink (2) according to the thermal expansion coefficient of the chip (1), wherein the difference value between the thermal expansion coefficient of the material for preparing the heat sink (2) and the thermal expansion coefficient A of the chip (1) is 0-3 ppm/K;
step 3, preparing a front part (21) and a rear part (22) respectively, wherein the front part (21) and the rear part (22) are connected to form a heat sink (2);
step 4, placing the heat sink (2) obtained in the step 3 in a packaging device, and welding the heat sink (2) and the chip (1);
and 5, sealing the cover or the top of the packaged device to finish packaging.
10. The chip packaging method for improving the COD threshold of a semiconductor laser according to claim 9, wherein: in the step 1, the chip (1) is prepared by GaAs, and the corresponding thermal expansion coefficient A=6.5 ppm/K;
in step 3, the front part (21) is Cu 20 W 80 Preparation, corresponding thermal expansion coefficient B1=8.5 ppm/K, rear (22) using Cu 10 W 90 The corresponding coefficient of thermal expansion b2=6.4 ppm/K was prepared.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310957327.7A CN116683278B (en) | 2023-08-01 | 2023-08-01 | Heat sink and chip packaging structure and method for improving COD threshold of semiconductor laser |
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| CN202310957327.7A CN116683278B (en) | 2023-08-01 | 2023-08-01 | Heat sink and chip packaging structure and method for improving COD threshold of semiconductor laser |
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| CN116683278B true CN116683278B (en) | 2023-12-08 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306849A (en) * | 1995-05-10 | 1996-11-22 | Shinko Electric Ind Co Ltd | Heat radiation part member and semiconductor device provided with this heat radiation part member |
| CN101339911A (en) * | 2007-07-06 | 2009-01-07 | Jds尤尼弗思公司 | Mounted semiconductor device and a method for making the same |
| JP2013125946A (en) * | 2011-12-16 | 2013-06-24 | Sumitomo Electric Ind Ltd | Optical module, nitride semiconductor laser device, submount |
| CN104493169A (en) * | 2014-12-26 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | Ceramic particle local reinforced metal heat sink and preparing method thereof |
| CN104498766A (en) * | 2014-11-27 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | Thermal expansion coefficient adjustable Cu heat sink and preparation method thereof |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN110021874A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of semiconductor laser and chip of laser |
-
2023
- 2023-08-01 CN CN202310957327.7A patent/CN116683278B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306849A (en) * | 1995-05-10 | 1996-11-22 | Shinko Electric Ind Co Ltd | Heat radiation part member and semiconductor device provided with this heat radiation part member |
| CN101339911A (en) * | 2007-07-06 | 2009-01-07 | Jds尤尼弗思公司 | Mounted semiconductor device and a method for making the same |
| JP2013125946A (en) * | 2011-12-16 | 2013-06-24 | Sumitomo Electric Ind Ltd | Optical module, nitride semiconductor laser device, submount |
| CN104498766A (en) * | 2014-11-27 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | Thermal expansion coefficient adjustable Cu heat sink and preparation method thereof |
| CN104493169A (en) * | 2014-12-26 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | Ceramic particle local reinforced metal heat sink and preparing method thereof |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN110021874A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of semiconductor laser and chip of laser |
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