CN116682907B - AlGaN-based multiple quantum well layer and deep ultraviolet light-emitting diode - Google Patents
AlGaN-based multiple quantum well layer and deep ultraviolet light-emitting diode Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 52
- 230000004888 barrier function Effects 0.000 claims abstract description 108
- 230000000903 blocking effect Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000005699 Stark effect Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 11
- 238000001194 electroluminescence spectrum Methods 0.000 description 10
- 230000010287 polarization Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
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- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a multiple quantum well layer based on AlGaN and a deep ultraviolet light-emitting diode. The multi-quantum well layer based on AlGaN is arranged below the p-type electron blocking layer, the last quantum barrier layer starts to gradually change Al components stepwise from 0.56 to 0.48 at a position which is 10-12 nm away from the p-type electron blocking layer, gradually increases to 0.56 sequentially, the gradient of each step is the same, the Al components of the last quantum barrier layer are increased to 0.64, and meanwhile, the thickness of the relevant quantum barrier layer meets a specific condition, so that the characteristics of hole injection, quantum confinement Stark effect and uneven carrier distribution in the multi-quantum well can be improved, the carrier radiation recombination efficiency is improved, and the internal quantum efficiency of the deep ultraviolet light-emitting diode based on AlGaN is improved.
Description
Technical Field
The invention relates to a light-emitting diode, in particular to a multiple quantum well layer and a deep ultraviolet light-emitting diode based on AlGaN.
Background
Among ultraviolet rays, light having a wavelength of 200nm to 280nm is called deep ultraviolet rays. AlGaN-based deep ultraviolet light emitting diodes have great development potential and application market in the fields of air and water purification, biochemical detection, sterilization, disinfection, invisible light communication and the like because of the advantages of environmental protection, small size, long service life and the like, which are incomparable with common ultraviolet light emitting diodes.
Through decades of research and development, the internal quantum efficiency of AlGaN-based deep ultraviolet light emitting diodes has been greatly improved. However, the current AlGaN-based deep ultraviolet light emitting diode has an internal quantum efficiency value that is still very undesirable compared with the fully commercialized visible light emitting diode, and it is difficult to meet the market demand. To date, many possible mechanisms have been proposed to explain the causes of internal quantum inefficiency, such as self-heating effects, low hole injection efficiency, electron leakage, auger recombination, quantum confinement stark effect, and non-uniform distribution of carriers in the active region. In the above mechanism, the low hole injection efficiency, quantum confinement stark effect and non-uniform carrier distribution play an important role in this problem. Due to the slow drift rate of holes relative to electrons, the injection of holes into the active region is inefficient and large numbers of carriers accumulate in the multiple quantum wells near the p-type region side, and the last quantum barrier has lattice mismatch with the electron blocking layer, creating polarization effects problems that ultimately lead to low radiative recombination efficiency and internal quantum efficiency.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks and disadvantages of the prior art, the present invention is directed to providing a multiple quantum well layer based on AlGaN, in which the last quantum barrier layer is specially designed to form an asymmetric quantum well, so as to improve hole injection, reduce quantum confinement stark effect, and effectively utilize the characteristic of uneven carrier distribution in the multiple quantum well, improve carrier radiation recombination efficiency, and further improve internal quantum efficiency of a deep ultraviolet light emitting diode based on AlGaN.
Another object of the present invention is to provide a deep ultraviolet light emitting diode including the above AlGaN-based multiple quantum well layer.
The aim of the invention is achieved by the following technical scheme:
The multi-quantum well layer based on AlGaN is arranged below the p-type electron blocking layer and comprises an M-layer quantum well layer and an M+1-layer quantum barrier layer; m is greater than or equal to 3;
the quantum well layers and the quantum barrier layers are alternately stacked;
the materials of the M quantum well layers are Al 0.46Ga0.64 N;
the 1~M th quantum barrier layer is made of Al 0.60Ga0.40 N;
The material of the M+1th quantum barrier layer is Al xGa1-x N, and x represents the component content of Al; the M+1th quantum barrier layer comprises N layers of sub-quantum barrier layers; n is greater than or equal to 7;
The 1 st quantum barrier layer is arranged on the M th quantum well layer; the material of the 1 st sub quantum barrier layer is Al 0.60Ga0.40 N; the component content x of Al in the material of the Nth sub-quantum barrier layer is equal to the component content of Al in the p-type electron barrier layer;
for the sub-quantum barrier layers from the 2 nd layer to the N-1 th layer, the value of x is gradually decreased from 0.56 to 0.48 in steps, and then gradually increased to 0.56 in steps, wherein the gradual variable of each step is the same;
the sum of the thicknesses of the sub-quantum barrier layers from the 2 nd layer to the N th layer is 10-12 nm, and the following conditions are satisfied:
Let the sub quantum barrier layer with x being 0.48 be the N 0 th layer, and the thickness of the sub quantum barrier layer is x 0; the sum of the thicknesses of the 1 st layer to the N 0 -1 st layer, the N 0 +1 th layer to the N th layer sub-quantum barrier layer is not equal to 2x 0.
Preferably, the value of N is 7-11.
Preferably, the thickness of the M+1th quantum barrier layer is 20-24 nm.
Preferably, the quantum well layer has a thickness of 1 to 3nm.
Preferably, for the 1~M th quantum barrier layer, the thickness of each quantum barrier layer is 10 to 12nm.
Preferably, the p-type electron blocking layer material is Al 0.64Ga0.36 N.
Preferably, for the 2 nd to N-1 th sub-quantum barrier layers, the gradient of each step is 0.02 to 0.05.
Preferably, in the N-layer sub-quantum barrier layer, the value of x is 0.60, 0.56, 0.52, 0.48, 0.52, 0.56, 0.64 in sequence.
A deep ultraviolet light emitting diode comprises the AlGaN-based multiple quantum well layer.
Specifically, the AlGaN-based multi-quantum well structure comprises a substrate, a buffer layer, an n-type AlGaN epitaxial layer, an AlGaN-based multi-quantum well layer, a p-type electron blocking layer, a p-type AlGaN layer and a p-type GaN layer from bottom to top, wherein a p-type electrode is arranged on the p-type GaN layer, and an n-type electrode is arranged on the n-type AlGaN epitaxial layer.
Preferably, the substrate is a sapphire substrate, and is any one of an r-plane, an m-plane or an a-plane.
Preferably, the buffer layer is made of AlN and has a thickness of 2-3 μm.
Preferably, the N-type AlGaN epitaxial layer is made of Al 0.58Ga0.42 N doped with Si, the doping concentration of Si is 3.5X10 18～5×1018cm-3, and the thickness is 1.2-1.5 μm.
Preferably, the p-type electron blocking layer is made of Al 0.64Ga0.36 N, the thickness is 10-12 nm, and the p-type electron blocking layer is doped with Mg, wherein the doping concentration of the Mg is 1.4X10 18～2×1018cm-3.
Preferably, the p-type AlGaN layer is made of Al 0.58Ga0.42 N, has a thickness of 10-12 nm and is doped with Mg, wherein the doping concentration of Mg is 2.2X10 18～3×1018cm-3.
Preferably, the p-type GaN layer is doped with Mg, the doping concentration of the Mg is 1 multiplied by 10 19～1×1021cm-3, and the thickness is 50-100 nm.
Compared with the prior art, the invention has the following advantages and beneficial effects:
According to the multi-quantum well layer based on AlGaN, through special design of the last quantum barrier layer, the last quantum barrier layer starts to gradually change Al components stepwise from 0.56 to 0.48 in sequence at a position which is 10-12 nm away from the p-type electron barrier layer, then gradually increases to 0.56 in sequence, the gradient of each step is the same, the Al components of the last quantum barrier layer are increased to 0.64, and meanwhile, the thickness of the related quantum barrier layer meets the specific conditions of the application, so that an asymmetric quantum well is formed, the uneven distribution characteristic of carriers is applied, and electrons and holes are recombined in the asymmetric quantum well; and because the Al component content step-by-step gradual change generates a polarization induction electric field, the injection of holes is improved, and meanwhile, the Al component content of the last sub-quantum barrier layer is the same as the Al component content of the p-type electron barrier layer, so that lattice mismatch is reduced, the formation of polarization effect is reduced, the carrier radiation recombination efficiency is improved, and the internal quantum efficiency of the deep ultraviolet light-emitting diode based on AlGaN is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a deep ultraviolet light emitting diode according to an embodiment of the present invention.
Fig. 2 is a stepped gradient chart of Al component content of the last quantum barrier layer of the deep ultraviolet light emitting diode according to the embodiment of the present invention.
Fig. 3 is a graph showing the light output power of the deep ultraviolet light emitting diode according to the embodiment 1 and the related art of the present invention.
Fig. 4 is an internal quantum efficiency curve of the deep ultraviolet light emitting diode of example 1 and the prior art according to the present invention.
FIG. 5 is an electroluminescent spectrum of a deep ultraviolet light emitting diode according to example 1 of the present invention and the prior art.
Fig. 6 is a current-voltage characteristic curve of the deep ultraviolet light emitting diode of embodiment 1 and the prior art of the present invention.
Fig. 7 is an optical output power curve of the present invention in examples 2 and 1.
Fig. 8 is an internal quantum efficiency curve of examples 2 and 1 of the present invention.
Fig. 9 is an electroluminescence spectrum of the present invention of example 2 and example 1.
Fig. 10 is a current-voltage characteristic curve of example 2 and example 1 of the present invention.
Fig. 11 is an optical output power curve of the present invention in examples 3 and 1.
Fig. 12 is an internal quantum efficiency curve of example 3 and example 1 of the present invention.
FIG. 13 is an electroluminescent spectrum of the present invention in examples 3 and 1.
Fig. 14 is a current-voltage characteristic curve of example 3 and example 1 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1, the deep ultraviolet light emitting diode of the present embodiment includes, from bottom to top, a substrate 1, a buffer layer 2, an n-type AlGaN epitaxial layer 3, a multiple quantum well layer 5, a p-type electron blocking layer 6, a p-type AlGaN layer 7, and a p-type GaN layer 8, wherein a p-type electrode 9 is disposed on a top surface of the p-type GaN layer, and an n-type electrode 4 is disposed on the n-type AlGaN epitaxial layer 3.
In this embodiment, the substrate may be a sapphire substrate, and may be any one of an r-plane, an m-plane, or an a-plane.
The material of the buffer layer was AlN, and the thickness was 2. Mu.m.
The material of the N-type AlGaN epitaxial layer is Al 0.58Ga0.42 N, doped with Si, the doping concentration of Si is 3.5X10 18cm-3, and the thickness is 1.2 μm.
The p-type electron blocking layer is made of Al 0.64Ga0.36 N and has a thickness of 12nm, so that electrons are effectively inhibited from overflowing the active region, and Mg is doped, wherein the doping concentration of the Mg is 2 multiplied by 10 18cm-3.
The p-type AlGaN layer is made of Al 0.58Ga0.42 N, has a thickness of 10nm and is doped with Mg, wherein the doping concentration of the Mg is 3 multiplied by 10 18cm-3.
The p-type GaN layer is doped with Mg, the doping concentration of the Mg is 1×10 21cm-3, and the thickness is 70nm.
The multiple quantum well layer of the present embodiment includes 5 quantum well layers and 6 quantum barriers;
the quantum well layers and the quantum barriers are alternately stacked;
The 5 quantum well layers are made of Al 0.46Ga0.64 N and have a thickness of 2nm.
The material of the 1 st to 5 th quantum barrier layers is Al 0.60Ga0.40 N, and the thickness is 12nm;
The material of the 6 th quantum barrier layer is Al xGa1-x N, and x represents the component content of Al; the 6 th quantum barrier layer comprises 7 layers of quantum barrier layers, the total thickness is 24nm, and the step gradient is started at a position which is away from the p-type electron barrier layer and is 12nm (namely the sum of the thicknesses of the 2 th layer and the 7 th layer is 12 nm);
The 1 st quantum barrier layer is arranged on the 5 th quantum well layer; the material of the 1 st sub quantum barrier layer is Al 0.60Ga0.40 N; the Al component content x in the material of the 7 th sub-quantum barrier layer is equal to the Al component content in the p-type electron barrier layer;
For the sub-quantum barrier layers from the 2 nd layer to the 6 th layer, the value of x is gradually decreased from 0.56 to 0.48 in steps, and then gradually increased to 0.56 in steps, and the gradual variable of each step is 0.04. And the Al component of the 7 th sub-quantum barrier layer is increased to 0.64; and the thicknesses of the 1 st layer to the 7 th layer sub-quantum barrier layers meet the following conditions: the sum of the thicknesses of the 1 st, 2 nd, 3 rd, 5 th, 6 th and 7 th sub-quantum barrier layers is not equal to 2 times the thickness of the 4 th sub-quantum barrier layer.
Specifically, the Al component content of the sub-quantum barrier layer in the material of the 6 th quantum barrier layer in this embodiment is 0.60, 0.56, 0.52, 0.48, 0.52, 0.56, 0.64 in order, as shown in fig. 2. Through the design of the graph, the characteristics of hole injection efficiency, quantum confinement Stark effect and carrier distribution non-uniformity of the deep ultraviolet light-emitting diode are fully utilized and solved, electrons and holes are recombined, a polarization induction electric field is generated due to the step gradient Al component content, hole injection is improved, the step gradient Al component content is increased to be the same as the Al component content of the p-type electron blocking layer, lattice mismatch is relieved, the formation of polarization effect is reduced, radiation recombination efficiency is improved, internal quantum efficiency is improved, and specific test results are shown in the graph 3-6.
Fig. 3 is a graph of light output power of the deep ultraviolet light emitting diode of the present embodiment and the prior art, wherein the abscissa of the graph is current, the unit is mA, the ordinate is light output power, the unit is mW, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the dotted line represents the deep ultraviolet light emitting diode of the prior art, and the light output power of the present embodiment is higher than that of the prior art. The deep ultraviolet light emitting diode in the prior art has the following structure: the semiconductor device comprises a sapphire substrate, an AlN buffer layer with the thickness of 2.5 mu m, an N-type Al 0.58Ga0.42 N epitaxial layer with the thickness of 1.2 mu m, an Al 0.46Ga0.54N/Al0.60Ga0.40 N conventional multi-quantum well layer with the quantum well and quantum barrier thicknesses of 2nm and 12nm respectively, a p-type Al 0.64Ga0.36 N electron blocking layer with the thickness of 12nm, a p-type Al 0.58Ga0.42 N layer with the thickness of 10nm and a p-type GaN layer with the thickness of 70nm from bottom to top, wherein a p-type electrode is arranged on the top surface of the p-type GaN layer, and an N-type electrode is arranged on the N-type Al 0.58Ga0.42 N epitaxial layer.
Fig. 4 is a graph showing internal quantum efficiency curves of the deep ultraviolet light emitting diode of the present embodiment and the prior art, wherein the abscissa is current, the unit mA, and the ordinate is internal quantum efficiency, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the dotted line represents the deep ultraviolet light emitting diode of the prior art.
Fig. 5 is an electroluminescence spectrum of the deep ultraviolet light emitting diode of the present embodiment and the prior art, the abscissa is wavelength, the unit nm, and the ordinate is electro-spectral intensity, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the dotted line represents the deep ultraviolet light emitting diode of the prior art.
Fig. 6 shows current-voltage characteristics of the deep ultraviolet light emitting diode of the present embodiment and the prior art, wherein the abscissa is voltage, the unit is V, the ordinate is current, the unit is mA, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the dotted line represents the deep ultraviolet light emitting diode of the prior art.
Example 2
The deep ultraviolet light emitting diode of the embodiment sequentially comprises a substrate, a buffer layer, an n-type AlGaN epitaxial layer, an AlGaN/AlGaN multi-quantum well layer, a p-type electron blocking layer, a p-type AlGaN layer and a p-type GaN layer from bottom to top, wherein a p-type electrode is arranged on the top surface of the p-type GaN layer, and an n-type electrode is arranged on the n-type AlGaN epitaxial layer.
In this embodiment, the substrate may be a sapphire substrate, and may be any one of an r-plane, an m-plane, or an a-plane.
The buffer layer material was AlN and had a thickness of 2. Mu.m.
The material of the N-type AlGaN epitaxial layer is Al 0.58Ga0.42 N, doped with Si, the doping concentration of Si is 3.2X10 18cm-3, and the thickness is 1.2 μm.
The p-type electron blocking layer is made of Al 0.64Ga0.36 N and has the thickness of 12nm, so that electrons are effectively inhibited from overflowing the active region, and Mg is doped, wherein the doping concentration of the Mg is 1.8X10 18cm-3.
The p-type AlGaN layer is made of Al 0.58Ga0.42 N, has the thickness of 10nm and is doped with Mg, wherein the doping concentration of the Mg is 2.9X10 18cm-3.
The p-type GaN layer is doped with Mg, the doping concentration of the Mg is 0.8X10 21cm-3, and the thickness is 70nm.
The multiple quantum well layer of the present embodiment includes 5 quantum well layers and 6 quantum barriers;
the quantum well layers and the quantum barriers are alternately stacked;
The material of the 5 quantum well layers is Al 0.46Ga0.64 N, and the thickness is 1.5nm.
The materials of the 1 st to 5 th quantum barrier layers are Al 0.60Ga0.40 N, and the thickness is 10nm;
The material of the 6 th quantum barrier layer is Al xGa1-x N, and x represents the component content of Al; the 6 th quantum barrier layer comprises 7 layers of quantum barrier layers, the total thickness is 20nm, and the step gradient is started at a position which is 10nm away from the p-type electron barrier layer (namely, the sum of the thicknesses of the 2 th layer to the 7 th layer is 10 nm);
The 1 st quantum barrier layer is arranged on the 5 th quantum well layer; the material of the 1 st sub quantum barrier layer is Al 0.60Ga0.40 N; the Al component content x in the material of the 7 th sub-quantum barrier layer is equal to the Al component content in the p-type electron barrier layer;
For the sub-quantum barrier layers from the 2 nd layer to the 6 th layer, the value of x is gradually decreased from 0.56 to 0.48 in steps, and then gradually increased to 0.56 in steps, and the gradual variable of each step is 0.04. While the Al composition of the 7 th sub-quantum barrier layer increases to 0.64. And the thicknesses of the 1 st layer to the 7 th layer sub-quantum barrier layers meet the following conditions: the sum of the thicknesses of the 1 st, 2 nd, 3 rd, 5 th, 6 th and 7 th sub-quantum barrier layers is not equal to 2 times the thickness of the 4 th sub-quantum barrier layer.
Specifically, the Al component content of the sub-quantum barrier layer in the material of the 6 th quantum barrier layer in this embodiment is 0.60, 0.56, 0.52, 0.48, 0.52, 0.56, 0.64 in sequence, and specific test results are shown in fig. 7 to 10.
Fig. 7 is a graph showing the light output power of the present embodiment and embodiment 1, wherein the abscissa represents the current, the ordinate represents the light output power, the unit represents the mW, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the broken line represents the deep ultraviolet light emitting diode of embodiment 1, and the light output power of the present embodiment is slightly lower than that of embodiment 1.
Fig. 8 shows internal quantum efficiency curves of the present example and example 1, in which current is plotted on the abscissa, the unit mA is plotted on the ordinate, internal quantum efficiency is plotted on the ordinate, the solid line represents the deep ultraviolet light emitting diode of the present example, and the broken line represents the deep ultraviolet light emitting diode of example 1, and it is apparent that the internal quantum efficiency of the deep ultraviolet light emitting diode of the present example is slightly reduced compared to that of example 1.
Fig. 9 shows electroluminescence spectra of the present embodiment and embodiment 1, in which the abscissa is wavelength, the unit is nm, the ordinate is electroluminescence spectrum intensity, the solid line shows the deep ultraviolet light emitting diode of the present embodiment, and the broken line shows the deep ultraviolet light emitting diode of embodiment 1, and it is understood that the electroluminescence spectrum intensity of the deep ultraviolet light emitting diode of the present embodiment is somewhat reduced compared with that of embodiment 1.
Fig. 10 is a current-voltage characteristic curve of the present embodiment and embodiment 1, the abscissa is voltage, the unit is V, the ordinate is current, the unit is mA, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the broken line represents the deep ultraviolet light emitting diode of embodiment 1.
Example 3
The deep ultraviolet light emitting diode of the embodiment sequentially comprises a substrate, a buffer layer, an n-type AlGaN epitaxial layer, an AlGaN/AlGaN multi-quantum well layer, a p-type electron blocking layer, a p-type AlGaN layer and a p-type GaN layer from bottom to top, wherein a p-type electrode is arranged on the top surface of the p-type GaN layer, and an n-type electrode is arranged on the n-type AlGaN epitaxial layer.
In this embodiment, the substrate may be a sapphire substrate, and may be any one of an r-plane, an m-plane, or an a-plane.
The buffer layer is made of AlN and has a thickness of 2 mu m.
The N-type AlGaN epitaxial layer is made of Al 0.58Ga0.42 N doped with Si, the doping concentration of Si is 3.0X10 18cm-3, and the thickness is 1.2 μm.
The p-type electron blocking layer is made of Al 0.64Ga0.36 N and has the thickness of 12nm, so that electrons are effectively inhibited from overflowing the active region, and Mg is doped, wherein the doping concentration of the Mg is 1.9X10 18cm-3.
The p-type AlGaN layer is made of Al 0.58Ga0.42 N, has the thickness of 10nm and is doped with Mg, wherein the doping concentration of the Mg is 3 multiplied by 10 18cm-3.
The p-type GaN layer is doped with Mg, the doping concentration of the Mg is 1.1X10 21cm-3, and the thickness is 70nm.
In this embodiment, the multiple quantum well layer of this embodiment includes 5 quantum well layers and 6 quantum barriers;
the quantum well layers and the quantum barriers are alternately stacked;
The 5 quantum well layers are made of Al 0.46Ga0.64 N and have a thickness of 1.7nm.
The material of the 1 st to 5 th quantum barrier layers is Al 0.60Ga0.40 N, and the thickness is 11nm;
the material of the 6 th quantum barrier layer is Al xGa1-x N, and x represents the component content of Al; the 6 th quantum barrier layer comprises 7 layers of quantum barrier layers, the total thickness is 22nm, and the step gradient is started at the position which is 11nm away from the p-type electron barrier layer (namely, the sum of the thicknesses of the 2 th layer to the 7 th layer is 11 nm);
The 1 st quantum barrier layer is arranged on the 5 th quantum well layer; the material of the 1 st sub quantum barrier layer is Al 0.60Ga0.40 N; the Al component content x in the material of the 7 th sub-quantum barrier layer is equal to the Al component content in the p-type electron barrier layer;
For the sub-quantum barrier layers from the 2 nd layer to the 6 th layer, the value of x is gradually decreased from 0.56 to 0.48 in steps, and then gradually increased to 0.56 in steps, and the gradual variable of each step is 0.04. And the Al component of the 7 th sub-quantum barrier layer is increased to 0.64; and the thicknesses of the 1 st layer to the 7 th layer sub-quantum barrier layers meet the following conditions: the sum of the thicknesses of the 1 st, 2 nd, 3 rd, 5 th, 6 th and 7 th sub-quantum barrier layers is not equal to 2 times the thickness of the 4 th sub-quantum barrier layer.
Specifically, the Al component content of the sub-quantum barrier layer in the material of the 6 th quantum barrier layer in this embodiment is 0.60, 0.56, 0.52, 0.48, 0.52, 0.56, 0.64 in sequence, and specific test results are shown in fig. 11 to 14.
Fig. 11 is a graph of the light output power of the present embodiment and embodiment 1, in which the abscissa represents the current, the ordinate represents the light output power, the unit represents the mW, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the broken line represents the deep ultraviolet light emitting diode of embodiment 1, and the light output power of the present embodiment is slightly lower than that of embodiment 1.
Fig. 12 shows internal quantum efficiency curves of the present example and example 1, in which current is plotted on the abscissa, the unit mA is plotted on the ordinate, internal quantum efficiency is plotted on the ordinate, the solid line shows the deep ultraviolet light emitting diode of the present example, and the broken line shows the deep ultraviolet light emitting diode of example 1, and it is clear that the internal quantum efficiency of the deep ultraviolet light emitting diode of the present example is slightly lower than that of example 1.
Fig. 13 shows electroluminescence spectra of the present embodiment and embodiment 1, in which the abscissa is wavelength, the unit is nm, the ordinate is electroluminescence spectrum intensity, the solid line shows the deep ultraviolet light emitting diode of the present embodiment, and the broken line shows the deep ultraviolet light emitting diode of embodiment 1, and it is understood that the electroluminescence spectrum intensity of the deep ultraviolet light emitting diode of the present embodiment is slightly reduced compared to that of embodiment 1.
Fig. 14 is a current-voltage characteristic curve of the present embodiment and embodiment 1, the abscissa is voltage, the unit is V, the ordinate is current, the unit is mA, the solid line represents the deep ultraviolet light emitting diode of the present embodiment, and the broken line represents the deep ultraviolet light emitting diode of embodiment 1.
Comparative example 1
This comparative example is identical to example 1, except for the following features:
The grading starts at a distance of still 14nm from the p-type electron blocking layer.
Comparative example 2
This comparative example is identical to example 1, except for the following features:
the grading starts at a distance of 8nm from the p-type electron blocking layer.
Comparative example 3
This comparative example is identical to example 1, except for the following features:
a single step taper starts at a distance of 12nm from the p-type electron blocking layer.
Comparative example 4
This comparative example is identical to example 1, except for the following features:
The sum of the thicknesses of the 1 st, 2 nd, 3 rd, 5 th, 6 th and 7 th sub-quantum barrier layers is equal to 2 times the thickness of the 4 th sub-quantum barrier layer.
The light output power, internal quantum efficiency and electroluminescence spectrum value test results of the AlGaN-based deep ultraviolet light emitting diodes of example 1 and comparative examples 1 to 4 are shown in table 1.
TABLE 1
As can be seen from table 1, the schemes in example 1 are optimal with respect to comparative examples 1 to 4, and the light output, internal quantum efficiency and electroluminescence spectrum values thereof are 20.76mW, 0.348 and 4.24x10 21, respectively, which are improved correspondingly as compared with comparative examples 1 to 4.
The embodiments described above are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments described above, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principles of the present invention should be made in the equivalent manner, and are included in the scope of the present invention.
Claims (6)
1. The AlGaN-based multiple quantum well layer is arranged below the p-type electron blocking layer and is characterized by comprising an M-layer quantum well layer and an M+1-layer quantum barrier layer; m is greater than or equal to 3;
the quantum well layers and the quantum barrier layers are alternately stacked;
the materials of the M quantum well layers are Al 0.46Ga0.64 N;
the 1~M th quantum barrier layer is made of Al 0.60Ga0.40 N;
The material of the M+1th quantum barrier layer is Al xGa1-x N, and x represents the component content of Al; the M+1th quantum barrier layer comprises N layers of sub-quantum barrier layers; n is equal to 7;
the 1 st quantum barrier layer is arranged on the M th quantum well layer; the material of the 1 st sub quantum barrier layer is Al 0.60Ga0.40 N; the component content x of Al in the material of the Nth sub-quantum barrier layer is equal to the component content of Al in the p-type electron barrier layer; the p-type electron blocking layer material is Al 0.64Ga0.36 N;
For the 1 st to N th sub-quantum barrier layers, the values of x are 0.60, 0.56, 0.52, 0.48, 0.52, 0.56 and 0.64 in sequence;
the sum of the thicknesses of the sub-quantum barrier layers from the 2 nd layer to the N th layer is 12nm, and the following conditions are satisfied:
Let the sub quantum barrier layer with x being 0.48 be the N 0 th layer, and the thickness of the sub quantum barrier layer is x 0; the sum of the thicknesses of the 1 st layer to the N 0 -1 st layer, the N 0 +1 th layer to the N th layer sub-quantum barrier layer is not equal to 2x 0.
2. The AlGaN based multiple quantum well layer according to claim 1, wherein the thickness of the m+1th quantum barrier layer is 20 to 24nm.
3. The AlGaN based multiple quantum well layer according to claim 1, wherein said quantum well layer has a thickness of 1 to 3nm.
4. The AlGaN based multiple quantum well layer according to claim 1, wherein for the 1~M th quantum barrier layer, the thickness of each quantum barrier layer is 10 to 12nm.
5. A deep ultraviolet light emitting diode comprising the AlGaN-based multiple quantum well layer according to any one of claims 1 to 4.
6. The deep ultraviolet light-emitting diode according to claim 5, wherein the deep ultraviolet light-emitting diode comprises a substrate, a buffer layer, an n-type AlGaN epitaxial layer, the AlGaN-based multiple quantum well layer, a p-type electron blocking layer, a p-type AlGaN layer and a p-type GaN layer in sequence from bottom to top, wherein a p-type electrode is arranged on the p-type GaN layer, and an n-type electrode is arranged on the n-type AlGaN epitaxial layer.
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| CN108231960A (en) * | 2018-01-05 | 2018-06-29 | 广东省半导体产业技术研究院 | A kind of ultraviolet device of AlGaN base semiconductors for improving light efficiency and preparation method thereof |
| CN112701196A (en) * | 2020-12-24 | 2021-04-23 | 广东省科学院半导体研究所 | AlGaN-based semiconductor ultraviolet device and preparation method thereof |
| CN113809209A (en) * | 2021-09-27 | 2021-12-17 | 厦门乾照光电股份有限公司 | LED epitaxial structure, preparation method thereof and LED chip |
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| CN108231960A (en) * | 2018-01-05 | 2018-06-29 | 广东省半导体产业技术研究院 | A kind of ultraviolet device of AlGaN base semiconductors for improving light efficiency and preparation method thereof |
| CN112701196A (en) * | 2020-12-24 | 2021-04-23 | 广东省科学院半导体研究所 | AlGaN-based semiconductor ultraviolet device and preparation method thereof |
| CN113809209A (en) * | 2021-09-27 | 2021-12-17 | 厦门乾照光电股份有限公司 | LED epitaxial structure, preparation method thereof and LED chip |
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