KR100609583B1 - Nitride semiconductor LED and fabrication method thereof - Google Patents

Abstract

A nitride semiconductor light emitting device according to the present invention, the first nitride semiconductor layer; An n-AlInN cladding layer formed over the first nitride semiconductor layer; an n-InGaN layer formed over the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; A p-InGaN layer formed on the active layer; a p-AlInN cladding layer formed on the p-InGaN layer; a second nitride semiconductor layer formed on the p-AlInN cladding layer; It includes.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention, the first nitride semiconductor layer; An n-AlInN cladding layer formed over the first nitride semiconductor layer; an active layer formed on the n-AlInN cladding layer; A p-AlInN cladding layer formed on the active layer; a second nitride semiconductor layer formed on the p-AlInN cladding layer; It includes.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention, the first nitride semiconductor layer; An active layer formed on the first nitride semiconductor layer; A p-InGaN layer formed on the active layer; a p-AlInN cladding layer formed on the p-InGaN layer; a second nitride semiconductor layer formed on the p-AlInN cladding layer; It includes.

Description

Nitride semiconductor LED and fabrication method

1 is a schematic view showing a laminated structure of a first embodiment of a nitride semiconductor light emitting device according to the present invention;

2 is a schematic view showing a laminated structure of a second embodiment of a nitride semiconductor light emitting device according to the present invention;

3 is a schematic view showing a laminated structure of a third embodiment of a nitride semiconductor light emitting device according to the present invention;

4 is a schematic view showing a laminated structure of a fourth embodiment of a nitride semiconductor light emitting device according to the present invention;

5 is a schematic view showing a laminated structure of a fifth embodiment of a nitride semiconductor light emitting device according to the present invention;

<Explanation of symbols for the main parts of the drawings>

1, 31, 41, 61, 71 ... nitride semiconductor light emitting device

2 ... substrate 4 ... buffer layer

6 ... In-doped GaN layer 8 ... Si-In co-doped GaN layer

10 ... n-AlInN cladding layer 12 ... n-InGaN layer

14 ... active layer 16 ... p-InGaN layer

18 ... p-AlInN cladding layer 20 ... p-GaN layer

22 ... Super grading n-In _x Ga _1-x N layer 34, 42 ... In _x Ga _1-x N layer

52, 54, 56, 58, 60 ... SiN _x Cluster Layer

44, 48 ... In _y Ga _1-y N well layer 46, 50 ... In _z Ga _1-z N barrier layer

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same.

In general, GaN-based nitride semiconductors are optical devices of blue / green light emitting diodes (LEDs) and high-speed switching and high-output devices such as metal semiconductor field effect transistors (MESFETs) and high electron mobility transistors (HEMTs) in their application fields. It is applied to an element. In particular, blue / green LED devices have already been mass-produced and global sales are increasing exponentially.

Such a GaN-based nitride semiconductor light emitting device is mainly grown on a sapphire substrate or a SiC substrate. In addition, a polycrystalline thin film of Al _y Ga _1-y N is grown as a buffer layer on a sapphire substrate or a SiC substrate at a low temperature growth temperature. Thereafter, an undoped GaN layer, a silicon-doped n-GaN layer, or a mixed structure of the above structure is grown at a high temperature to form an n-GaN layer as a first electrode layer. In addition, a nitride semiconductor light emitting device is manufactured by forming a p-GaN layer doped with magnesium (Mg) as a second electrode layer. The light emitting layer (multi-quantum well structure active layer) is formed in a sandwich structure between the n-GaN layer and the p-GaN layer.

In addition, the p-GaN layer, which is the second electrode layer, is formed by doping Mg atoms during crystal growth. Mg atoms injected into the doping source during crystal growth should be replaced with Ga positions to act as p-GaN layers. In combination with hydrogen gas decomposed at to form a Mg-H composite in the GaN crystal layer becomes a high resistance of about 10㏁.

Therefore, after forming the pn junction light emitting device, a subsequent activation process for breaking the Mg-H complex to replace Mg atoms with Ga sites is required. However, the light emitting device has a disadvantage in that an amount of acting as a carrier contributing to luminescence in the activation process is about 10 ¹⁷ / cm 3, which is much lower than the Mg atomic concentration of 10 ¹⁹ / cm 3 or more, so that it is difficult to form a resistive contact.

In addition, Mg atoms, which are not activated as carriers and remain in the p-GaN nitride semiconductor, serve as a center for trapping light emitted at the interface with the active layer, thereby rapidly decreasing the light output.

To improve this problem, a method of increasing current injection efficiency by lowering contact resistance by using a very thin transparent resistive metal material has been used. By the way, the thin transparent resistive metal used to reduce the contact resistance generally has a light transmittance of about 75 to 80%, otherwise serves as a loss. In addition, in order to increase the internal quantum efficiency, there is a limit in improving the light output in the crystal growth itself of the nitride semiconductor without improving the design of the light emitting device and the crystallinity of the light emitting layer and the p-GaN layer.

An object of the present invention is to provide a nitride semiconductor light emitting device capable of improving the crystallinity of the active layer constituting the nitride semiconductor light emitting device and improving the light output and reliability thereof, and a method of manufacturing the same.

In order to achieve the above object, a nitride semiconductor light emitting device according to the present invention, the first nitride semiconductor layer; An n-AlInN cladding layer formed on the first nitride semiconductor layer; An n-InGaN layer formed on the n-AlInN cladding layer; An active layer formed on the n-InGaN layer; A p-InGaN layer formed on the active layer; A p-AlInN cladding layer formed on the p-InGaN layer; A second nitride semiconductor layer formed on the p-AlInN cladding layer; Its features are to include.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention in order to achieve the above object, the first nitride semiconductor layer; An n-AlInN cladding layer formed on the first nitride semiconductor layer; An active layer formed on the n-AlInN cladding layer; A p-AlInN cladding layer formed on the active layer; A second nitride semiconductor layer formed on the p-AlInN cladding layer; Its features are to include.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention to achieve the above object, the first nitride semiconductor layer; An active layer formed on the first nitride semiconductor layer; A p-InGaN layer formed on the active layer; A p-AlInN cladding layer formed on the p-InGaN layer; A second nitride semiconductor layer formed on the p-AlInN cladding layer; Its features are to include.

In addition, the nitride semiconductor light emitting device manufacturing method according to the present invention in order to achieve the above object, forming a buffer layer on a substrate; Forming an In-doped GaN layer doped with indium on the buffer layer; Forming a first electrode layer on the in-doped GaN layer; Forming an n-AlInN cladding layer on the first electrode layer; Forming an active layer on the n-AlInN cladding layer; Forming a p-AlInN cladding layer on the active layer; Forming a p-GaN layer on the p-AlInN cladding layer; Forming a second electrode layer on the p-GaN layer; Its features are to include.

In addition, to achieve the above object another embodiment of the nitride semiconductor light emitting device manufacturing method according to the present invention, forming a buffer layer on a substrate; Forming an In-doped GaN layer doped with indium on the buffer layer; Forming a first electrode layer on the in-doped GaN layer; Forming an active layer emitting light on the first electrode layer; Forming a p-InGaN layer on the active layer; Forming a p-AlInN cladding layer on the p-InGaN layer; Forming a p-GaN layer on the p-AlInN cladding layer; Forming a second electrode layer on the p-GaN layer; Its features are to include.

According to the present invention as described above, there is an advantage that the crystallinity of the active layer constituting the nitride semiconductor light emitting device can be improved, and the light output and reliability can be improved.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view schematically showing a stacked structure of a first embodiment of a nitride semiconductor light emitting device according to the present invention.

In the nitride semiconductor light emitting device 1 according to the present invention, as shown in FIG. 1, the buffer layer 4 is formed on the substrate 2. Here, the buffer layer 4 may be formed of an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1- It may be selected from a stacked structure of _x N / GaN.

An indium-doped In-doped GaN layer 6 is formed on the buffer layer 4, and an n-type first electrode layer is formed on the In-doped GaN layer 6. As the n-type first electrode layer, a Si-In co-doped GaN layer 8 formed by simultaneously doping silicon and indium may be employed.

An n-AlInN cladding layer 10 is formed on the Si-In co-doped GaN layer 8, and an n-InGaN layer 12 is formed on the n-AlInN cladding layer 10. An active layer 14 emitting light is formed on the n-InGaN layer 12. The active layer 14 may be formed in a single quantum well structure or a multi-quantum well structure. An example of the stacked structure of the active layer 14 will be described later with reference to FIG. 3. In addition, according to the active layer 14 according to the present invention, even in the case of forming a single quantum well structure, there is an advantage that the sufficient light efficiency can be achieved.

Subsequently, a p-InGaN layer 16 is formed on the active layer 14, and a p-AlInN cladding layer 18 is formed on the p-InGaN layer 16. In addition, a p-GaN layer 20 is formed on the p-AlInN cladding layer 18. In this case, the p-GaN layer 20 may be doped with magnesium (Mg).

The n-type second electrode layer is formed on the p-GaN layer 20. The n-type second electrode layer may be a super grading n-In _x Ga _1-x N layer 22 that controls the energy band gap by sequentially changing the indium composition. In this case, the super-grading n-In _x Ga _1-x N layer 22 may be formed in the composition range of 0 <x <0.2. In addition, silicon may be doped into the super-grading n-In _x Ga _1-x N layer 22.

As described above, in the nitride semiconductor light emitting device according to the present invention, both the first electrode layer 8 and the second electrode layer 22 are formed of an n-type nitride semiconductor, and the p-GaN layer 20 is formed therebetween. In view of this, unlike the conventional pn junction light emitting device, it can be interpreted as having an npn junction light emitting device structure.

In addition, the n-type nitride semiconductor (for example, the super-grading n-In _x Ga _1-x N layer 22) used as the second electrode layer has a lower resistance than the conventional p-GaN contact layer, thereby reducing contact resistance. Current injection can be maximized. In addition, as the transparent electrode applying the bias voltage to the second electrode layer, it is possible to use a transmissive resistive metal or a transmissive conductive oxide that maximizes current spreading to maximize light output and has excellent light transmittance. As such a material, Au alloy metal including ITO, ZnO, RuOx, IrOx and NiO or Ni may be used.

Although not shown in the drawings, an InGaN / AlInGaN super lattice structure layer or an InGaN / InGaN superlattice structure layer may be formed as the second electrode layer. In addition, silicon may be doped into the InGaN / AlInGaN super lattice structure layer or the InGaN / InGaN superlattice structure layer.

Although not shown in the drawings, an n-AlInN layer may be formed as the second electrode layer.

According to the nitride semiconductor light emitting device 1 according to the present invention having such a configuration, the n-AlInN cladding layer 10 and the p-AlInN cladding layer 18 are inserted around the active layer 14 to form the active layer ( 14) The internal quantum efficiency can be improved by suppressing the carrier injection efficiency and the current overflow phenomenon.

2 is a schematic view showing a stacked structure of a second embodiment of a nitride semiconductor light emitting device according to the present invention. The description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 among the stacked structures shown in FIG. 2 will be omitted.

The nitride semiconductor light emitting device 31 according to the second embodiment of the present invention has a low indium content of In _x Ga _{1-x as} compared to the nitride semiconductor light emitting device 1 according to the first embodiment shown in FIG. 1. The difference is that the N layer 34 is further formed.

That is, according to the nitride semiconductor light emitting device 31 according to the second embodiment of the present invention, an In _x Ga _1-x N layer 34 having a low indium content is formed between the n-InGaN layer 12 and the active layer 14. To form more. In order to further increase the internal quantum efficiency, the In _x Ga _1-x N layer 34 having a low indium content was further grown before the active layer 14 was grown to control the strain of the active layer 14. will be.

Next, the structure of the active layer employed in the nitride semiconductor light emitting device 41 according to the present invention will be described in detail with reference to FIG. 3. 3 is a schematic view showing a laminated structure of a third embodiment of a nitride semiconductor light emitting device according to the present invention. In the stacked structure shown in FIG. 3, the description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 will be omitted.

In the nitride semiconductor light emitting device 41 according to the third embodiment of the present invention, as shown in FIG. 3, in order to increase the internal quantum efficiency, an indium content for controlling the strain of the active layer is provided. A low low-mole In _x Ga _1-x N layer 42 is formed. In addition, in order to improve the light output and reverse leakage current due to indium fluctuation, the low-mole In _x Ga _1-x N layer 42 is disposed on the lower and upper portions of several tens of angstroms ( Each of the SiN _x cluster layers 52 and 54 formed to a thickness of i) is further provided.

In addition, the light emitting active layer may be formed of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer.

In FIG. 3, as an active layer, a SiN _x cluster layer 56 and 58 is formed between an In _y Ga _1-y N well layer 44 and 48 and an In _z Ga _1-z N barrier layer 46 and 50. An example of a light emitting device formed of a multi-quantum well structure is further provided. In order to improve the luminous efficiency of the active layer, the composition ratio of In _y Ga _1-y N well layer (0 <y <0.35) / SiNx cluster layer / In _z Ga _1-z N barrier layer (0 <z <0.1) You can also adjust. In addition, considering the relationship with the low-mole In _x Ga _1-x N layer 42 having a low indium content, the In _y Ga _1-y N well layer 44 (48) / In _z Ga _{1- The} indium content doped in the _z N barrier layers 46 and 50 and the indium content doped in the low-mole In _x Ga _1-x N layer 42 are respectively 0 <x <0.1, 0 <y <0.35 , It can be adjusted to have a value of 0 <z <0.1.

Although not shown in the drawings, an indium variation of the In _y Ga _1-y N well layer between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer is controlled. A GaN cap layer may be formed. At this time, the indium content of each of the light emitting well layer and the barrier layer is In _y Ga _1-y N (0 <y <0.35) / GaN cap / In _z Ga _1-z N (0 <z <0.1 Can be composed of

Then, after growing the last layer of the active layer consisting of a single quantum well structure or a multi-quantum well structure, the SiNx cluster layer 60 is further grown to a thickness of several tens to tens of angstroms to form the p-GaN layer 20. It is possible to suppress diffusion of the Mg element inside the active layer.

4 is a schematic view showing a laminated structure of a fourth embodiment of the nitride semiconductor light emitting device according to the present invention. In the stacked structure illustrated in FIG. 4, the description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 will be omitted.

In the nitride semiconductor light emitting device 61 according to the fourth embodiment of the present invention, an active layer 14 is formed on an n-AlInN cladding layer 10, and a p-AlInN cladding layer 18 is formed on the active layer 14. There is a characteristic in this formed point.

That is, the nitride semiconductor light emitting device 61 according to the fourth embodiment of the present invention is compared with the n-InGaN layer 12 when compared with the nitride semiconductor light emitting device 1 according to the first embodiment shown in FIG. 1. It has a modified laminated structure in which the p-InGaN layer 16 is not formed.

FIG. 5 is a view schematically showing a stacked structure of a fifth embodiment of the nitride semiconductor light emitting device according to the present invention. The description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 in the stacked structure shown in FIG. 5 will be omitted.

In the nitride semiconductor light emitting device 71 according to the fifth embodiment of the present invention, an active layer 14 is formed on a Si-In co-doped GaN layer 8, which is a first electrode layer, and p is formed on the active layer 14. The feature is that the InGaN layer 16 and the p-AlInN cladding layer 18 are formed.

That is, the nitride semiconductor light emitting device 61 according to the fifth embodiment of the present invention, when compared with the nitride semiconductor light emitting device 1 according to the first embodiment shown in FIG. 1, the n-AlInN cladding layer 10 And a modified laminated structure in which the n-InGaN layer 12 is not formed.

As described above, according to the nitride semiconductor light emitting device and the manufacturing method thereof according to the present invention, there is an advantage that the crystallinity of the active layer constituting the nitride semiconductor light emitting device can be improved, and the light output and reliability can be improved.

Claims (44)

A first nitride semiconductor layer; An n-AlInN cladding layer formed on the first nitride semiconductor layer; An n-InGaN layer formed on the n-AlInN cladding layer; An active layer formed on the n-InGaN layer; A p-InGaN layer formed on the active layer; A p-AlInN cladding layer formed on the p-InGaN layer; A second nitride semiconductor layer formed on the p-AlInN cladding layer; Nitride semiconductor light emitting device comprising a. A first nitride semiconductor layer; An n-AlInN cladding layer formed on the first nitride semiconductor layer; An active layer formed on the n-AlInN cladding layer; A p-AlInN cladding layer formed on the active layer; A second nitride semiconductor layer formed on the p-AlInN cladding layer; Nitride semiconductor light emitting device comprising a. A first nitride semiconductor layer; An active layer formed on the first nitride semiconductor layer; A p-InGaN layer formed on the active layer; A p-AlInN cladding layer formed on the p-InGaN layer; A second nitride semiconductor layer formed on the p-AlInN cladding layer; Nitride semiconductor light emitting device comprising a. The method according to any one of claims 1 to 3, A nitride semiconductor light emitting device, characterized in that the second electrode layer is formed on the second nitride semiconductor layer. The method according to any one of claims 1 to 3, Under the first nitride semiconductor layer, Board; A buffer layer formed on the substrate; Nitride semiconductor light emitting device comprising a. The method of claim 5, The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN A nitride semiconductor light emitting device, characterized in that formed and selected from the laminated structure of. The method according to any one of claims 1 to 3, The first nitride semiconductor layer, In-doped GaN layer doped with In; A first electrode layer formed on the In-doped GaN layer; Nitride semiconductor light emitting device comprising a. The method of claim 7, wherein The first electrode layer is a nitride semiconductor light emitting device, characterized in that the silicon and indium-doped GaN layer. The method of claim 1, A nitride semiconductor light emitting device, characterized in that an In _x Ga _1-x N layer is further formed between the n-InGaN layer and the active layer. The method of claim 2, A nitride semiconductor light emitting device, characterized in that an In _x Ga _1-x N layer is further formed between the n-AlInN cladding layer and the active layer. The method of claim 3, wherein The nitride semiconductor light emitting device of claim 1, wherein an In _x Ga _1-x N layer is further formed between the first electrode layer and the active layer. The method according to any one of claims 1 to 3, A nitride semiconductor light emitting device, characterized in that a plurality of SiN _x cluster layer is formed between the first nitride semiconductor layer and the p-AlInN cladding layer. The method of claim 12, The SiN _x cluster layer is nitride semiconductor light emitting device, characterized in that formed in the thickness of several tens of angstroms. The method according to any one of claims 1 to 3, The active layer is a nitride semiconductor light emitting device, characterized in that consisting of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method of claim 14, A GaN cap layer is formed between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer to control the indium variation of the In _y Ga _1-y N well layer. A nitride semiconductor light emitting device, characterized in that. The method according to any one of claims 9 to 11, Indium content doped in the In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer constituting the active layer and indium content doped in the In _x Ga _1-x N layer are each 0 <x < A nitride semiconductor light emitting device having a value of 0.1, 0 <y <0.35, 0 <z <0.1. The method of claim 4, wherein The second electrode layer is a nitride semiconductor light emitting device, characterized in that the super lattice structure containing a super grading structure (In) or a change in the indium content sequentially. The method of claim 17, The super grading structure is formed of n-In _x Ga _1-x N nitride semiconductor light emitting device. The method of claim 17, The superlattice structure is a nitride semiconductor light emitting device, characterized in that formed of InGaN / InGaN superlattice structure or InGaN / AlInGaN superlattice structure. The method of claim 4, wherein The second electrode layer is a nitride semiconductor light emitting device, characterized in that formed by the n-AlInN layer. The method of claim 4, wherein The nitride semiconductor light emitting device of claim 2, wherein the second electrode layer is doped with silicon. The method according to any one of claims 1 to 3, The nitride semiconductor light emitting device of claim 2, further comprising a transparent electrode on the second nitride semiconductor layer. The method of claim 4, wherein The nitride semiconductor light emitting device of claim 2, further comprising a transparent electrode on the second electrode layer. The method of claim 22, The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed of a transparent conductive oxide or a transparent resistive metal. The method of claim 23, wherein The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed of a transparent conductive oxide or a transparent resistive metal. The method of claim 22, The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed by selecting from the material of ITO, ZnO, IrOx, RuOx, NiO or Au alloy containing Ni. The method of claim 23, wherein The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed by selecting from the material of ITO, ZnO, IrOx, RuOx, NiO or Au alloy containing Ni. The method of claim 2, And a p-InGaN layer formed between the active layer and the p-AlInN cladding layer. Forming a buffer layer over the substrate; Forming an In-doped GaN layer doped with indium on the buffer layer; Forming a first electrode layer on the in-doped GaN layer; Forming an n-AlInN cladding layer on the first electrode layer; Forming an active layer on the n-AlInN cladding layer; Forming a p-AlInN cladding layer on the active layer; Forming a p-GaN layer on the p-AlInN cladding layer; Forming a second electrode layer on the p-GaN layer; Nitride semiconductor light emitting device manufacturing method comprising a. Forming a buffer layer over the substrate; Forming an In-doped GaN layer doped with indium on the buffer layer; Forming a first electrode layer on the in-doped GaN layer; Forming an active layer emitting light on the first electrode layer; Forming a p-InGaN layer on the active layer; Forming a p-AlInN cladding layer on the p-InGaN layer; Forming a p-GaN layer on the p-AlInN cladding layer; Forming a second electrode layer on the p-GaN layer; Nitride semiconductor light emitting device manufacturing method comprising a. The method of claim 29 or 30, The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN The method of manufacturing a nitride semiconductor light emitting device, characterized in that formed in the laminated structure of. The method of claim 29 or 30, The first electrode layer is a nitride semiconductor light emitting device, characterized in that the silicon and indium-doped GaN layer. The method of claim 29, And forming an n-InGaN layer between the n-AlInN cladding layer and the active layer or between the active layer and the p-AlInN cladding layer. The method of claim 33, And a step of forming an In _x Ga _1-x N layer between the n-InGaN layer and the active layer. The method of claim 29, And a step of forming an In _x Ga _1-x N layer between the n-AlInN cladding layer and the active layer. The method of claim 30, And a step of forming an In _x Ga _1-x N layer between the first electrode layer and the active layer. The method according to any one of claims 34 to 36, Nitride, characterized in that the In _x Ga _1-x N layer of the lower and the In _x Ga _1-x N layer and the p-AlInN step that a plurality of SiN _x cluster layer between the cladding layer is formed which comprises a semiconductor Light emitting device manufacturing method. The method of claim 37, wherein The SiN _x cluster layer is a nitride semiconductor light emitting device manufacturing method, characterized in that formed in the thickness of several tens of angstroms. The method of claim 29 or 30, The active layer is a nitride semiconductor light emitting device, characterized in that formed of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method of claim 39, A GaN cap layer is formed between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer to control the indium variation of the In _y Ga _1-y N well layer. Nitride semiconductor light emitting device manufacturing method characterized in that the step is provided. The method of claim 29 or 30, The second electrode layer may be an n-In _x Ga _1-x N layer, an InGaN / InGaN super lattice structure layer, or an InGaN / AlInGaN superlattice structure layer having a super grading structure in which indium content is sequentially changed. Or an n-AlInN layer. The method of claim 29 or 30, And forming a p-InGaN layer between the active layer and the p-AlInN cladding layer. The method of claim 29 or 30, A method of manufacturing a nitride semiconductor light emitting device, characterized in that the step of forming a transparent electrode on the second electrode layer. The method of claim 43, The transparent electrode is a nitride semiconductor light emitting device manufacturing method, characterized in that formed of a transparent conductive oxide or a transparent resistive metal.

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