CN1166811C - Sputter-ion pump - Google Patents
Sputter-ion pump Download PDFInfo
- Publication number
- CN1166811C CN1166811C CNB961006242A CN96100624A CN1166811C CN 1166811 C CN1166811 C CN 1166811C CN B961006242 A CNB961006242 A CN B961006242A CN 96100624 A CN96100624 A CN 96100624A CN 1166811 C CN1166811 C CN 1166811C
- Authority
- CN
- China
- Prior art keywords
- pump case
- mentioned
- pump
- magnet
- ion sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The present invention provides an ion sputtering pump which uses common magnets needed to be disassembled at every outside baking and has the advantages of little heat energy loss and no need of heat resistant magnets during outside baking. The present invention is characterized in that air layers 18 and 18' are arranged among a pump casing 4, N poles 15 of permanent magnets and S poles 16 of the permanent magnets in order to control the temperature increase of the permanent magnets 5 and 6, wherein cathodes 1 and 2 and an anode 3 are arranged in the pump casing 4. Heat insulation materials can also be clamped among the pump casing and the permanent magnets 5 and 6.
Description
The present invention relates to more particularly, relate to and be convenient to the ion sputtering pump that cure the outside in order to obtain the ion sputtering pump of ultrahigh vacuum(HHV).
Simple in structure firmly, the ion sputtering pump that easily obtains no oily ultrahigh vacuum(HHV) is widely used in the exhaust of the electronics injection system of electron tube and accelerator etc.But, this pump is with accumulating exhaust gas mode deflated pump, because be to carry out exhaust, so its performance changes with the hysteresis situation of emitting use such as deflated gas in the use by effect with the embedding gas molecule of cathode material chemisorption of institute's sputter.
Thereby, for the regeneration of ion sputtering pump, the inner face of heated cathode, anode and pump case, carry out emitting the outside that adsorbed embedding gas molecule makes it to degas earlier and curing (250 ℃-300 ℃ 5-20 hour) in order to give.
Fig. 7 is the example of the structural pattern of existing two grid type ionic sputter pumps, in pump case 4, be provided with stainless steel rounding tube be unit anode 3, be positioned at anode 3 both sides and leave plate shaped titanium system negative electrode 1 at interval, 2, between two electrodes, apply the high direct voltage of 7.5KV by direct supply 8.And then formation 1000-2000 Gauss's magnetic field pump case 4 in relatively and respectively is installed in contact with the both sides of pump case 4 with the N utmost point 5 and the S utmost point 6 of yoke 9 supporting fixed permanent magnets.Pump case 4 is bearing on the yoke 9 by support 10.
The air-releasing mechanism of this ion sputtering pump is as described below.Reduce to 1Pa when following at pressure, because of the discharge of the Benin between negative electrode 1, the anode 3 and other reason at the electronics e that negative electrode 1 produces, anode 3 in, advance to negative electrode 2 directions with helical orbit along field direction, collide with the interior gas molecule of anode 3 in the meantime.Collide and produce secondary electron and positively charged ion, secondary electron is kept Benin discharge, positively charged ion is accelerated and bombarding cathode 1,2 surface makes the sputter of cathode material titanium be attached to negative electrode 1 on every side, 2 anodes 3 are on the internal surface of pump case 4, form new active titanium surface, by this titanium surface, chemisorption and embedding gas molecule carry out exhaust.
But, as mentioned above, must to carry out the outside to this ion sputtering pump in order regenerating and to cure, this will be with pump case 4 and negative electrode 1,2, and anode 3 heating are risen its temperature, and heat also must conduct the N utmost point 5 to permanent magnet, the S utmost point 6, thus cause:
(1) because thermal capacity ambassador's heat energy loss of permanent magnet 5,6 is big.
(2) cure the temperature rising that causes because of the outside and can make common permanent magnet performance depreciation, thereby need to bear the stable on heating permanent magnet of this temperature.
For fear of these problems,, just must carry out permanent magnet 5,6 is taken off and then loads onto the operation of such trouble whenever cure when making temperature be raised to for example more than 300 ℃ the outside.
In view of the above problems, the little ion sputtering pump of heat energy loss when the purpose of this invention is to provide a kind of outside and curing, and ion sputtering pump that need not thermotolerance magnet, and each outside needn't be unloaded the ion sputtering pump of lower magnet when curing.
In order to achieve the above object, ion sputtering pump of the present invention, dress negative electrode and anodic pump case and be installed in the magnet that makes formation magnetic field in this pump case on the outer wall of this pump case in it is equipped with, and utilize the direct-current discharge in above-mentioned magnetic field under vacuum condition, it is characterized in that: make by means of being clipped in as thermofin between above-mentioned pump case and the above-mentioned magnet in projection that is provided with on the face relative of above-mentioned magnet or the gas cloud that forms by means of inserting the dividing plate between above-mentioned magnet and the above-mentioned pump case with above-mentioned pump case.
And, being more preferably, aforementioned barriers is a lagging material.
And, being more preferably, above-mentioned magnet accompanies above-mentioned gas cloud, be installed to the outer wall both sides of above-mentioned pump case by yoke, and above-mentioned pump case is bearing on the support of above-mentioned yoke by thermal baffle.
In addition, in order to achieve the above object, ion sputtering pump of the present invention, dress negative electrode and anodic pump case and be installed in the magnet that makes formation magnetic field in this pump case on the outer wall of this pump case in it is equipped with, and utilize the direct-current discharge in the above-mentioned magnetic field under vacuum condition, it is characterized in that: lagging material is clipped between above-mentioned pump case and the above-mentioned magnet as thermofin.
And, being more preferably, above-mentioned lagging material is to be coated with on the face relative with above-mentioned pump case that is contained in above-mentioned magnet and to form at least.
And, be more preferably, the dividing plate that is formed by above-mentioned lagging material is inserted between above-mentioned magnet and the above-mentioned pump case gas cloud is set, make the combination that accompanies above-mentioned gas cloud and above-mentioned lagging material between above-mentioned pump case and the above-mentioned magnet.
And, being more preferably, above-mentioned magnet only accompanies above-mentioned lagging material or accompanies the combination of above-mentioned lagging material and above-mentioned gas cloud, be installed to by yoke on the outer wall of above-mentioned pump case, and above-mentioned pump case is supported on the support of above-mentioned yoke by thermal baffle.
In view of the above, when curing in the outside that built-in negative electrode, anode and pump case are heated simultaneously, the gas cloud that is clipped between pump case and the magnet can prevent that the heat of pump case from passing to magnet, thereby the temperature that suppresses magnet rises.
The lagging material that is clipped in when curing between pump case and the magnet can prevent that the heat of pump case from passing to magnet, thereby suppresses the rising of magnet temperature.
Fig. 1 is that the ion of first embodiment spatters the pump structure mode chart.
Fig. 2 is the skeleton view of the used permanent magnet of first embodiment.
Fig. 3 is the structural pattern figure of the ion sputtering pump of second embodiment.
Fig. 4 is the skeleton view of the used permanent magnet of second embodiment.
Fig. 5 is the skeleton view of other variation of the used permanent magnet of first embodiment.
Fig. 6 is that the ion oil of the variation of second embodiment is penetrated the pump structure mode chart, forms filming of lagging material on the face relative with accessory with the pump case of permanent magnet.
Fig. 7 is the structural pattern figure of existing ion sputtering pump.
Figure describes the embodiment of ion sputtering pump of the present invention with reference to the accompanying drawings below.
First embodiment
Fig. 1 is the structural pattern figure of first embodiment of two grid type ionic sputter pumps.That is, negative electrode 1,2 and anode 3 and high direct voltage to be added in the ion sputtering pump of aspects such as two interpolars and prior art example with direct supply 8 identical are housed in pump case 4.The N utmost point 15, the S utmost point 16 that supporting is fixed on the permanent magnet on the yoke 9 stand facing each other mutually in the both sides of pump case 4, pump case 4 is bearing on the yoke 9 by support 10, this also is identical, with prior art example difference is permanent magnet 15,16 by means of four jiaos of projections 17 that the place forms at the face relative with pump case 4,17 ', and accompany respectively between the pump case 4 gas cloud 18,18 '.The skeleton view that has formed the permanent magnet 15 (16) of projection 17 (17 ') is shown in Fig. 2.
Because the air-releasing mechanism with this ion sputtering pump is identical with the air-releasing mechanism of the ion sputtering pump of using the prior art example, repeats no more.
Using so that this pump regenerated outside when curing, with the upper wall of the panel heater of not drawing among the figure from the indirect heating pump case, the negative electrode that pump case 4 and Qi Nei are adorned, 1,2 and anode 3 be heated to the temperature of regulation, because gas cloud 18 stops heat is passed to permanent magnet 15,16 from pump case 4, rise so can suppress the temperature of permanent magnet 1516 during externally curing.Thereby do not waste heat energy, permanent magnet 15,16 also can use conventional.
To the ion sputtering pump of first embodiment, when the temperature of its pump case was heated to 250 ℃, only need make specification was the electric current that the panel heater of 100V flows through 1A, and during 15 hours cure, the temperature of permanent magnet 15,16 is no more than 100 ℃.In contrast to this, the ion sputtering pump with shown in the prior art example will make pump case 4 be warmed up to 250 ℃ of needs 1.5A electric currents, and the temperature of permanent magnet 6 also rises to 250 ℃.
Second embodiment
Fig. 3 is the structural pattern figure of second embodiment of two grid type ionic sputter pumps.That is, negative electrode 1,2 and anode 3 are contained in the pump case 4, with direct supply 8 high direct voltage are added to two interpolars etc., and be identical with the ion sputtering pump of prior art example.And, the N utmost point 5, the S utmost point 6 that supporting is fixed on the permanent magnet on the yoke 9 stand facing each other mutually in the both sides of pump case 4, pump case 4 is bearing on the yoke 9 by support 10, also be identical, and prior art example difference is to accompany the lagging material 21,21 ' that is made of the silk floss glass fibre between permanent magnet 5,6 and pump case 4 respectively.
Because the air-releasing mechanism of the ion sputtering pump of present embodiment is identical with the ion sputtering pump of prior art example also, it illustrates omission.When this ion sputtering pump regeneration carrying out outside was cured, the electric power that heating pump case 4 is required and the temperature rise of permanent magnet 5,6 all were suppressed in the equal degree with first embodiment.
More than be explanation, the invention is not restricted to this certainly, can carry out various distortion according to technological thought of the present invention to the embodiment of the invention.
For example, in first embodiment, be the projection 17 that becomes by quadrangle at permanent magnet 15,16,17 ', make and pump case 4 between accompany gas cloud 18,18 ', but also can make permanent magnet 15 like that by image pattern 4,16 surface forms a plurality of parallel chevrons 22,22 ' and becomes male and fomale(M﹠F), can also look like as shown in Figure 5, at permanent magnet 15, cruciform projection 23,23 ' is set on 16 the surface, the projection of other different shape also can be arranged.Owing to all will become greatly with protuberance and projection magneticflux-density, form these protuberances and projection so be preferably in the relative position, position that needs magnetic field with pump case 4 interior parts.
Heat-stable material that can also for example polyfluortetraethylene plate is such inserts the projection 17,17 ' that replaces being formed on 15,16 4 jiaos of places of permanent magnet between permanent magnet 5,6 and the pump case 4 as dividing plate in first embodiment.
In a second embodiment, be that silk flosssilk wadding shape glass fibre is clipped between permanent magnet 5,6 and the pump case 4 as heat-stable material 21,21 ', but also can on the surface of permanent magnet 5,6, form filming of foam phenolic resin or foam polyimide resin as lagging material 21,21 ', replace silk flosssilk wadding shape glass fibre.Filming on being formed on the face relative with permanent magnet 5,6 with pump case 4, also can be formed on as shown in Figure 6 on the face relative and this two sides of face relative (with 121 with yoke 9 with pump case 4,121 ' expression), can also suppress to conduct heat to permanent magnet 5,6 from yoke 9.Because represent identical among symbol and the Fig. 7 among Fig. 3 of second embodiment, so omit explanation to them.And then can also on the whole surface of permanent magnet 5,6, form with the method for application and film.
In above embodiment, the N utmost point 15 and the S utmost point 16 are to be made of permanent magnet, can certainly constitute with electro-magnet, at this moment make magnetic sheet 15 and magnetic sheet 16 be connected to magnetic loop, the part in this loop is wound into coil, flows through direct current by making it, can obtain the effect same with the foregoing description as can be known.
And in first embodiment, second embodiment, pump case 4 is bearing on the yoke 9 by support 10, in order to suppress the heat transfer of support 10 from then on, preferably make supporting area as much as possible little, the thermal baffle of wanting the amine plate to make by polyamides on folder between pump case 4 and the support 10 is highly effective.
In first embodiment, second embodiment, be that two grid type ionic sputter pumps are illustrated, the present invention also comprises certainly and is applicable to rare gas element deflated three-pole ion sputtering pump.
As mentioned above, ion sputtering pump according to first invention, be clipped in gas cloud between pump case and the magnet when externally curing, owing to prevent that the heat of pump case from passing to magnet, suppressing the magnet temperature rises, thereby alleviated the outside required heat energy loss of curing, magnet also need not thermotolerance, uses the magnet of common usefulness, also needn't unload when cure the outside again.
Ion sputtering pump according to second invention, be clipped in lagging material between pump case and the magnet when externally curing, owing to prevent that the heat of pump case from passing to magnet, suppressing the magnet temperature rises, cure required heat energy loss thereby alleviate, magnet also need not thermotolerance, uses the magnet of common usefulness, also needn't unload when cure the outside again.
Claims (4)
1. ion sputtering pump, dress negative electrode and anodic pump case and be installed in the magnet that makes formation magnetic field in this pump case on the outer wall of this pump case in it is equipped with, and utilize the direct-current discharge in above-mentioned magnetic field under vacuum condition, it is characterized in that: make by means of being clipped in as thermofin between above-mentioned pump case and the above-mentioned magnet in projection that is provided with on the face relative of above-mentioned magnet or the gas cloud that forms by means of inserting the dividing plate between above-mentioned magnet and the above-mentioned pump case with above-mentioned pump case.
2. according to the said ion sputtering pump of claim 1, it is characterized in that: aforementioned barriers is a lagging material.
3. ion sputtering pump, dress negative electrode and anodic pump case and be installed in the magnet that makes formation magnetic field in this pump case on the outer wall of this pump case in it is equipped with, and utilize the direct-current discharge in the above-mentioned magnetic field under vacuum condition, it is characterized in that: lagging material is clipped between above-mentioned pump case and the above-mentioned magnet as thermofin.
4. according to the said ion sputtering pump of claim 3, it is characterized in that: above-mentioned lagging material is to be coated with on the face relative with above-mentioned pump case that is contained in above-mentioned magnet and to form at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB961006242A CN1166811C (en) | 1996-01-05 | 1996-01-05 | Sputter-ion pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB961006242A CN1166811C (en) | 1996-01-05 | 1996-01-05 | Sputter-ion pump |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1153832A CN1153832A (en) | 1997-07-09 |
| CN1166811C true CN1166811C (en) | 2004-09-15 |
Family
ID=5116666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB961006242A Expired - Lifetime CN1166811C (en) | 1996-01-05 | 1996-01-05 | Sputter-ion pump |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1166811C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19836125C2 (en) * | 1998-08-10 | 2001-12-06 | Leybold Systems Gmbh | Atomizing device with a cathode with permanent magnet arrangement |
| US6835048B2 (en) * | 2002-12-18 | 2004-12-28 | Varian, Inc. | Ion pump having secondary magnetic field |
| CN104952685B (en) * | 2015-01-19 | 2017-11-21 | 中国航天员科研训练中心 | The big pumping speed ionic pump of lightweight |
| CN108302007A (en) * | 2017-12-24 | 2018-07-20 | 安徽万瑞冷电科技有限公司 | Low-temperature ion pumps |
| CN109830422B (en) * | 2019-02-26 | 2020-05-19 | 东北大学 | Magnetic circuit structure of sputtering ion pump and sputtering ion pump |
| CN110491764B (en) * | 2019-09-02 | 2022-03-29 | 北京卫星环境工程研究所 | Magnetic yoke assembly of sputtering ion pump |
-
1996
- 1996-01-05 CN CNB961006242A patent/CN1166811C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1153832A (en) | 1997-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8342813B2 (en) | Combined pumping system comprising a getter pump and an ion pump | |
| CN1166811C (en) | Sputter-ion pump | |
| KR20110139267A (en) | Combined pumping system comprising a getter pump and an ion pump | |
| JPH03191060A (en) | Sputtering device | |
| JP2016012501A (en) | Lamination type ultrahigh vacuum creation device | |
| RU156193U1 (en) | INDUCTION ION MOTOR | |
| KR100860274B1 (en) | Compact uhv sputter ion pump bakable at low temperature and manufacturing method at the same | |
| JPH0822803A (en) | Sputter ion pump | |
| US3801719A (en) | Emitter block assembly | |
| CN1109512A (en) | Vacuum sputtering apparatus | |
| EP3867528A1 (en) | Non-mechanical vacuum pumping system and analytical instrument | |
| GB2212520A (en) | Ion source | |
| CN2735536Y (en) | Cathode arrangement for strong current electronic gun | |
| WO2006008541A2 (en) | Electronic apparatus | |
| DE69120874T2 (en) | Ion pump and vacuum pump system therefor | |
| CN117385329A (en) | Magnetron sputtering coating device | |
| RU2603348C2 (en) | Penning pump | |
| Bubley et al. | Commissioning of the 60 keV Electron Cooler for the NICA Booster | |
| Shibuya et al. | Development of an R&D Electrostatic septum for the 50-GeV Proton Synchrotron | |
| SU1620672A1 (en) | Electric-arc evaporator of getter vacuum pump | |
| Moenich | Nonevaporable getter for ion beam fusion | |
| Roemer | Combined sputter-ion and NEG pump | |
| Benjamin | Selection of a Vac-Ion Pump for a Terminal Ion Source | |
| US3947342A (en) | Method of forming a composite electrode | |
| CN115176083A (en) | Pump module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20040915 |
|
| EXPY | Termination of patent right or utility model |