CN116679370A - Novel polaroid and preparation method thereof - Google Patents
Novel polaroid and preparation method thereof Download PDFInfo
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- CN116679370A CN116679370A CN202310430505.0A CN202310430505A CN116679370A CN 116679370 A CN116679370 A CN 116679370A CN 202310430505 A CN202310430505 A CN 202310430505A CN 116679370 A CN116679370 A CN 116679370A
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- 238000002360 preparation method Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000004891 communication Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 31
- 230000003746 surface roughness Effects 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000005350 fused silica glass Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 15
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 239000005083 Zinc sulfide Substances 0.000 claims description 8
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 4
- 239000005304 optical glass Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 2
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 2
- 230000008033 biological extinction Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000005387 chalcogenide glass Substances 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 238000012634 optical imaging Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 172
- 238000003672 processing method Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
- G02B5/3041—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3066—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state involving the reflection of light at a particular angle of incidence, e.g. Brewster's angle
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Polarising Elements (AREA)
Abstract
The application provides a novel polaroid, which sequentially comprises a covering layer, an upper surface of a Brewster angle polarizing layer, the Brewster angle polarizing layer, a lower surface of the Brewster angle polarizing layer and a substrate layer from top to bottom; compared with the existing polarizing device, the novel polarizing plate provided by the application has the advantages of integration level, optical damage threshold, cost and the like, and is suitable for various application fields such as optical imaging, optical detection, infrared light communication and the like.
Description
Technical Field
The application relates to a novel polaroid and a manufacturing method thereof, belonging to the field of optical polaroids or polarizers.
Background
The optical polaroid has wide application in scientific research, national defense and daily life. There are various principles of generation of polarized light, such as the use of reflection and refraction principles, birefringence principles, dichromatic substance absorption, metal wire grids or thin film absorption, etc. The existing polarizing devices developed based on the above principle are reflective polarizers, dichroic polarizers, birefringent polarizers, wire grid polarizers, thin film polarizers, etc. High quality polarizing beam splitter prisms often require high purity crystals, which are unavoidable at high cost; the Brewster window sheet commonly used in the laser cavity has the advantage of high laser damage threshold, the thickness specification is about 2mm, and the thickness of the polarizer formed by serially stacking multiple layers is large.
Disclosure of Invention
Based on the problems, the application provides a novel polaroid with the thickness of millimeter level or even submillimeter level, which has the technical scheme that:
the utility model provides a novel polaroid, includes overburden, brewster angle polarizing layer and base plate layer, brewster angle polarizing layer is located between overburden and the base plate layer, three fixed connection, overburden and base plate layer material are the same, and the material of brewster angle polarizing layer is different.
Preferably, a uniform toothed grid structure is distributed on one surface of the substrate layer, which is contacted with the Brewster angle polarizing layer, and the included angle of the toothed grid structure is theta; the thickness of the substrate layer is 1-500 mu m; the substrate layer material is processed into a toothed grid structure, and the height of the toothed grid structure is 1-500 mu m.
Preferably, a uniform toothed grid structure is distributed on one surface of the covering layer, which is contacted with the Brewster angle polarizing layer, and the included angle of the toothed grid structure is theta; the thickness of the covering layer is 1-500 mu m, and the toothed grid structure of the covering layer is parallel to the toothed grid structure of the substrate layer.
Preferably, the Brewster angle polarizer layer has a thickness of 1 μm to 200. Mu.m.
A novel preparation method of a polaroid comprises the following steps:
s1, respectively preparing a cover layer, a Brewster angle polarizing layer and a substrate layer, wherein the cover layer and the substrate layer are the same in material and different in material from the Brewster angle polarizing layer;
s2, the covering layer, the Brewster angle polarizing layer and the substrate layer are sequentially and fixedly connected to form the polaroid.
Preferably, the substrate layer is prepared as follows:
the substrate layer is made of any one of fused quartz, optical glass, calcium fluoride, magnesium fluoride, barium fluoride, lithium fluoride and aluminum oxide; processing a substrate layer material into a toothed grid structure in a semiconductor process mode, wherein the included angle of the toothed grid structure is theta, and the height of the toothed grid structure is 1-500 mu m;
the semiconductor technology is any one of laser processing, photoetching technology, electron beam photoetching technology, nanoimprint technology and matched dry etching and wet etching.
Preferably, the preparation method of the Brewster angle polarizer layer comprises the following steps:
the Brewster angle polarizing layer material adopts an infrared communication wave band light transmission material, and is any one of air gap, zinc selenide, zinc sulfide, aluminum oxide, gallium arsenide, germanium monocrystal, silicon carbide and chalcogenide glass;
the surface of the covering layer, which is intersected with the Brewster angle polarizing layer, is an upper interface of the Brewster angle polarizing layer; the surface of the substrate layer, which is intersected with the Brewster angle polarizing layer, is the lower interface of the Brewster angle polarizing layer; the upper interface of the Brewster angle polarizer layer is parallel to the lower interface of the Brewster angle polarizer layer; the thickness of the Brewster angle polarizing layer is 1-200 mu m;
the Brewster angle polarizing layer is formed by any one of sputtering technology, electron beam evaporation technology, thermal evaporation technology and chemical vapor deposition.
Preferably, the coating is prepared as follows:
the covering layer comprises any one material of fused quartz glass, optical glass and aluminum oxide, and is processed into a toothed grid structure, the included angle of the toothed grid structure is theta, and the included angle between the normal line of a smooth inclined plane formed by the covering layer and normal incident light rays is brewster angle i b The method comprises the steps of carrying out a first treatment on the surface of the And θ is equal to 2 Brewster angle i b Is a complementary angle of (2);
the coating is processed on the Brewster angle polarizing layer by any one of a sputtering technology, an electron beam evaporation technology, a thermal evaporation technology and chemical vapor deposition technology, and is ground and polished after being processed to a certain thickness; the grinding and polishing technology comprises any one of mechanical polishing, chemical mechanical polishing and ion beam polishing, and the surface roughness after polishing is 0.01-20.00nm; the thickness of the covering layer is 1-500 mu m.
Preferably, the substrate layer, the brewster angle polarizing layer and the cover layer form a hierarchical unit, and the units of the hierarchical unit can be stacked and connected in series through the hierarchical units to form a polarizer structure with a high extinction ratio; the number of the layers of the hierarchical unit is 1-20.
Through the technical scheme, the novel polaroid and the manufacturing method thereof provided by the application have the following beneficial effects:
1. the application provides a novel polaroid and a manufacturing method thereof based on a semiconductor processing technology, and provides a novel selection scheme for the field of manufacturing of optical polaroids.
2. The thickness of the polaroid formed by stacking the multilayer level units in series structure is millimeter level or even submillimeter level, has advantages in the aspects of integration level, optical damage threshold, cost and the like, and can be applied to various application fields such as optical imaging, optical detection, infrared light communication and the like.
Drawings
Fig. 1 is a schematic cross-sectional view of a structural part of a novel polarizer and a method for manufacturing the same according to an embodiment of the present application.
Fig. 2 is a schematic cross-sectional view of a novel multi-cell layered stacked structure of a brewster angle polarizer.
In the figure, a first level unit, a second level unit, a covering layer, a Brewster angle polarizer upper interface, a Brewster angle polarizer 103, a Brewster angle polarizer lower interface and a substrate layer 105 are shown in the specification.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the examples of the present application.
The application provides a novel polaroid, which comprises a covering layer and clothThe Brewster angle polarizer comprises a Brewster angle polarizer layer and a substrate layer, wherein the Brewster angle polarizer layer is positioned between a cover layer and the substrate layer and is fixedly connected with the cover layer, the cover layer and the substrate layer are made of the same material, and the Brewster angle polarizer layer is made of different materials from the Brewster angle polarizer layer, and the Brewster angle polarizer layer has a medium refractive index n 2 Greater than the dielectric refractive index n of the substrate layer and the cover layer 1 . The surface of the cover layer 101 intersecting the brewster angle polarizer layer 103 is the brewster angle polarizer layer upper interface 102; the plane of intersection of substrate layer 105 and brewster angle polarizer layer 103 is brewster angle polarizer layer lower interface 104.
A uniform toothed grid structure is distributed on one surface of the substrate layer, which is contacted with the Brewster angle polarizing layer, and the included angle of the toothed grid structure is theta; the thickness of the covering layer is 1-500 mu m; the substrate layer material is processed into a toothed grid structure, and the height of the toothed grid structure is 1-500 mu m.
A uniform toothed grid structure is distributed on one surface of the covering layer, which is contacted with the Brewster angle polarizing layer, the included angle of the toothed grid structure is theta, and the theta is equal to 2 times of Brewster angle i b Is a complementary angle of (2); the thickness of the covering layer is 1-500 mu m, and the toothed grid structure of the covering layer is parallel to the toothed grid structure of the substrate layer.
The cover layer, the Brewster angle polarizing layer and the substrate layer are bonded or glued to realize the fixation of the three.
When the light source is used, incident light can be incident from the substrate layer or the covering layer, the materials and the structures of the light source and the covering layer are the same, and the principle is the same.
Example 1:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) The thickness is 40 μm; a toothed grid structure with the height of 20 mu m is obtained by a femtosecond laser processing method; the brewster angle polarizing layer 103 is made of silicon carbide (SiC) material, and the brewster angle polarizing layer 103 is prepared on the surface of the substrate layer 105 by a chemical vapor deposition related technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.8 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other;the cover layer 101 is made of fused Silica (SiO) 2 ) Preparing the surface of the cover layer on the Brewster angle polarizing layer 103 by using a chemical vapor deposition related technology, polishing and processing the upper surface of the cover layer to be smooth, wherein the thickness is 40 mu m, and the surface roughness is less than 1nm; the hierarchical units with the same structure are subjected to 12-layer stacking series connection.
Example 2:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) Thickness is 60 μm; obtaining a toothed grid structure with the height of 30 mu m by a photoetching technology method; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC) material, and is prepared on the surface of the substrate layer 105 by a chemical vapor deposition related technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.8 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The surface of the covering layer 101 is polished and processed to be flat, the thickness is 60 mu m, and the surface roughness is less than 1nm by using a chemical vapor deposition related technology to prepare the surface of the Brewster angle polarizer layer 103. The hierarchical units with the same structure are subjected to 12-layer stacking series connection.
Example 3:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) Thickness is 60 μm; obtaining a toothed grid structure with the height of 30 mu m by a photoetching technology method; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC) material, and is prepared on the surface of the substrate layer 105 by a sputtering technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.8 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The surface of the covering layer is polished and processed to be flat, the thickness is 60 mu m, and the surface roughness is less than 1nm. The hierarchical units with the same structure are subjected to 10-layer stacking series connection.
Example 4:
in this embodiment, the substrate layer 101 is calcium fluoride (CaF 2 ) The thickness is 40 μm; the height of 20 mu is obtained by a femtosecond laser processing methodm is a toothed grid structure; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC) material, and is prepared on the surface of the substrate layer 105 by a chemical vapor deposition related technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.2 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the coating 101 is calcium fluoride (CaF) 2 ) The surface of the covering layer is polished and processed to be smooth, the thickness is 40 mu m, and the surface roughness is less than 1nm. The hierarchical units with the same structure are subjected to 10-layer stacking series connection.
Example 5:
in this embodiment, the substrate layer 101 is calcium fluoride (CaF 2 ) Thickness is 60 μm; obtaining a toothed grid structure with the height of 30 mu m by a femtosecond laser processing method; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC) material, and is prepared on the surface of the substrate layer 105 by a chemical vapor deposition related technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.2 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the coating 101 is calcium fluoride (CaF) 2 ) The electron beam evaporation technology is used for preparing the Brewster angle polarizing layer 103, the upper surface of the covering layer is polished and processed to be flat, the thickness is 60 mu m, and the surface roughness is less than 1nm. The hierarchical units with the same structure are stacked in series with 15 layers.
Example 6:
in this embodiment, the substrate layer 105 is calcium fluoride (CaF 2 ) The thickness is 80 μm; a toothed grid structure with the height of 40 mu m is obtained by a femtosecond laser processing method; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC) material, and is prepared on the surface of the substrate layer 105 by an electron beam evaporation technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.2 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the coating 101 is calcium fluoride (CaF) 2 ) The electron beam evaporation technology is used to prepare the surface of the Brewster angle polarizing layer 103, the upper surface of the covering layer is polished and processed to be flat, the thickness is 80 mu m, and the surface is provided withThe surface roughness is less than 1nm. The hierarchical units with the same structure are subjected to 12-layer stacking series connection.
Example 7:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) The thickness is 40 μm; obtaining a toothed grid structure with the height of 20 mu m by a wet etching method; the Brewster angle polarizing layer 103 is made of zinc sulfide (ZnS) material, and is prepared on the surface of the substrate layer 105 by an electron beam evaporation technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 64.6 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The surface of the upper surface of the covering layer is polished and processed to be smooth, the thickness is 40 mu m, and the surface roughness is less than 1nm. The hierarchical units with the same structure are subjected to 12-layer stacking series connection.
Example 8:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) Thickness is 60 μm; obtaining a toothed grid structure with the height of 30 mu m by a wet etching method; the Brewster angle polarizing layer 103 is made of zinc sulfide (ZnS) material, and is prepared on the surface of the substrate layer 105 by a thermal evaporation technology, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 64.6 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The electron beam evaporation technology is used for preparing the Brewster angle polarizing layer 103, the upper surface of the covering layer is polished and processed to be flat, the thickness is 60 mu m, and the surface roughness is less than 1nm; the hierarchical units with the same structure are subjected to 10-layer stacking series connection.
Example 9:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) The thickness is 80 μm; a tooth-shaped grid structure with the height of 40 mu m is obtained by a nano imprinting technology etching method; the Brewster angle polarizing layer 103 is made of zinc sulfide (ZnS) material, and is prepared on the surface of the substrate layer 105 by an electron beam evaporation method, wherein the thickness is 20 mu m, and the surface roughness is less than 1nm; formation ofThe tooth-shaped grating included angle theta is 64.6 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The electron beam evaporation technology is used for preparing the Brewster angle polarizing layer 103, the upper surface of the covering layer is polished and processed to be flat, the thickness is 60 mu m, and the surface roughness is less than 1nm; the hierarchical units with the same structure are subjected to 10-layer stacking series connection.
Example 10:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) The thickness is 20 μm; a toothed grid structure with the height of 10 mu m is obtained by a femtosecond laser processing method; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC), and is prepared on the surface of the substrate layer 105 by an electron beam evaporation method, wherein the thickness is 5 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.8 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The thickness is 20 μm; a toothed grid structure with the height of 10 mu m is obtained by a femtosecond laser processing method; the surface of the substrate layer 105 is prepared on the cover layer by an electron beam evaporation method, the thickness is 5 mu m, and the surface roughness is less than 1nm; abutting the cover layer 103 with the substrate layer 101 to form a complete hierarchical unit; and 8 layers of stacked serial connection are carried out on the hierarchical units with the same structure.
Example 11:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) The thickness is 40 μm; a toothed grid structure with the height of 20 mu m is obtained by a femtosecond laser processing method; the Brewster angle polarizing layer 103 is made of silicon carbide (SiC), and is prepared on the surface of the substrate layer 105 by an electron beam evaporation method, wherein the thickness is 1 mu m, and the surface roughness is less than 1nm; the formed tooth-shaped grating included angle theta is 58.8 degrees; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The thickness is 40 μm; a toothed grid structure with the height of 20 mu m is obtained by a femtosecond laser processing method; the coating layer was prepared on the surface of the substrate layer 105 by electron beam evaporation to a thickness of 10 μmRoughness less than 1nm; abutting the cover layer 103 with the substrate layer 101 to form a complete hierarchical unit; and 8 layers of stacked serial connection are carried out on the hierarchical units with the same structure.
Example 12:
in this embodiment, the substrate layer 105 is made of fused silica (SiO 2 ) The thickness is 40 μm; a toothed grid structure with the height of 20 mu m is obtained by a femtosecond laser processing method; the formed tooth-shaped grating included angle theta is 110.7 degrees; brewster angle polarizer 103 is an air gap with a thickness of 20 μm; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of fused Silica (SiO) 2 ) The method comprises the steps of obtaining a toothed grid structure which is completely the same as a substrate layer by a femtosecond laser processing method; abutting the cover layer 103 with the substrate layer 101 to form a complete hierarchical unit; the hierarchical units with the same structure are subjected to 12-layer stacking series connection.
Example 13:
in this embodiment, sapphire (Al 2 O 3 ) The thickness is 40 μm; a toothed grid structure with the height of 20 mu m is obtained by a femtosecond laser processing method; the formed tooth-shaped grating included angle theta is 120.5 degrees; brewster angle polarizer 103 is an air gap with a thickness of 20 μm; the brewster angle polarizer upper interface 102 and the brewster angle polarizer lower interface 104 are parallel to each other; the cover layer 101 is made of sapphire (Al 2 O 3 ) The method comprises the steps of obtaining a toothed grid structure which is completely the same as a substrate layer by a femtosecond laser processing method; abutting the cover layer 103 with the substrate layer 101 to form a complete hierarchical unit; the hierarchical units with the same structure are subjected to 12-layer stacking series connection.
While the foregoing is directed to the preferred embodiments of the present application, it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present application, and such modifications and variations should also be regarded as being within the scope of the application.
Claims (9)
1. The novel polaroid is characterized by comprising a covering layer, a Brewster angle polarizing layer and a substrate layer, wherein the Brewster angle polarizing layer is positioned between the covering layer and the substrate layer and is fixedly connected with the substrate layer, and the covering layer and the substrate layer are the same in material and different in material from the Brewster angle polarizing layer.
2. The novel polarizer according to claim 1, wherein a uniform tooth-shaped grid structure is distributed on one surface of the substrate layer, which is contacted with the brewster angle polarizing layer, and an included angle of the tooth-shaped grid structure is θ; the thickness of the substrate layer is 1-500 mu m; the substrate layer material is processed into a toothed grid structure, and the height of the toothed grid structure is 1-500 mu m.
3. The novel polarizer according to claim 1, wherein a uniform tooth-shaped grid structure is distributed on one surface of the cover layer, which is contacted with the brewster angle polarizing layer, and an included angle of the tooth-shaped grid structure is θ; the thickness of the covering layer is 1-500 mu m, and the toothed grid structure of the covering layer is parallel to the toothed grid structure of the substrate layer.
4. A novel polarizer according to claim 1, wherein the brewster angle polarizer layer has a thickness of 1 μm to 200 μm.
5. The preparation method of the novel polaroid is characterized by comprising the following steps of:
s1, respectively preparing a cover layer, a Brewster angle polarizing layer and a substrate layer, wherein the cover layer and the substrate layer are the same in material and different in material from the Brewster angle polarizing layer;
s2, the covering layer, the Brewster angle polarizing layer and the substrate layer are sequentially and fixedly connected to form the polaroid.
6. The method of manufacturing a novel polarizer according to claim 5, wherein the substrate layer is manufactured as follows:
the substrate layer is made of any one of fused quartz, optical glass, calcium fluoride, magnesium fluoride, barium fluoride, lithium fluoride and aluminum oxide; processing a substrate layer material into a toothed grid structure in a semiconductor process mode, wherein the included angle of the toothed grid structure is theta, and the height of the toothed grid structure is 1-500 mu m;
the semiconductor technology is any one of laser processing, photoetching technology, electron beam photoetching technology, nanoimprint technology and matched dry etching and wet etching.
7. The method for preparing a novel polarizer according to claim 5, wherein the method for preparing the brewster angle polarizing layer comprises the following steps:
the Brewster angle polarizing layer material adopts an infrared communication wave band light transmission material, and is any one of air gap, zinc selenide, zinc sulfide, aluminum oxide, gallium arsenide, germanium monocrystal, silicon carbide and chalcogenide glass;
the surface of the covering layer, which is intersected with the Brewster angle polarizing layer, is an upper interface of the Brewster angle polarizing layer; the surface of the substrate layer, which is intersected with the Brewster angle polarizing layer, is the lower interface of the Brewster angle polarizing layer; the upper interface of the Brewster angle polarizer layer is parallel to the lower interface of the Brewster angle polarizer layer; the thickness of the Brewster angle polarizing layer is 1-200 mu m;
the Brewster angle polarizing layer is formed by any one of sputtering technology, electron beam evaporation technology, thermal evaporation technology and chemical vapor deposition.
8. The method of manufacturing a novel polarizer according to claim 5, wherein the method of manufacturing the cover layer comprises the steps of:
the covering layer comprises any one material of fused quartz glass, optical glass and aluminum oxide, and is processed into a toothed grid structure, the included angle of the toothed grid structure is theta, and the included angle between the normal line of a smooth inclined plane formed by the covering layer and normal incident light rays is brewster angle i b The method comprises the steps of carrying out a first treatment on the surface of the And θ is equal to 2 Brewster angle i b Is a complementary angle of (2);
the coating is processed on the Brewster angle polarizing layer by any one of a sputtering technology, an electron beam evaporation technology, a thermal evaporation technology and chemical vapor deposition technology, and is ground and polished after being processed to a certain thickness; the grinding and polishing technology comprises any one of mechanical polishing, chemical mechanical polishing and ion beam polishing, and the surface roughness after polishing is 0.01-20.00nm; the thickness of the covering layer is 1-500 mu m.
9. The method for preparing a novel polarizer according to claim 5, wherein the substrate layer, the brewster angle polarizing layer and the cover layer form a hierarchical unit, and the hierarchical units can be stacked and connected in series to form a polarizer structure with a high extinction ratio; the number of the layers of the hierarchical unit is 1-20.
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