CN116667806A - Voltage controlled attenuator and system - Google Patents
Voltage controlled attenuator and system Download PDFInfo
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- CN116667806A CN116667806A CN202310896265.3A CN202310896265A CN116667806A CN 116667806 A CN116667806 A CN 116667806A CN 202310896265 A CN202310896265 A CN 202310896265A CN 116667806 A CN116667806 A CN 116667806A
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- 230000005669 field effect Effects 0.000 claims description 38
- 230000000694 effects Effects 0.000 abstract description 3
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application relates to the field of attenuators, comprising a voltage-controlled attenuator and a system, wherein the voltage-controlled attenuator comprises: n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; the N switch modules are controlled by the same first control voltage, so that the N switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance. The application has the effect of improving the power bearing and handling capacity of the attenuator by stacking the tubes.
Description
Technical Field
The present application relates to the field of attenuators, and in particular, to a voltage controlled attenuator and a system.
Background
MMIC technology has developed rapidly in recent years and is widely applied to active phased array radar components. In an active phased array radar, a T/R component is a basic component of the active phased array radar, and in order to realize accurate amplitude and phase control on a receiving and transmitting signal, the resolution capability of a system on a target is improved, and an adjustable attenuator with large attenuation range, wide coverage frequency, high attenuation precision and good linearity is required. A voltage-controlled attenuator is a device for controlling microwave signal attenuation by applying voltage to PINs of a PIN tube to adjust the conduction degree of the PIN tube, and is mainly applied to ALC control occasions and matched with negative feedback to realize the function of controlling the signal intensity. The main function of the attenuator is to control the amplitude of the signal, and the N-bit digital attenuator has 2N amplitude control states. Attenuators are widely used in various phased array systems as important amplitude control circuits in radio frequency chips. To meet the performance criteria of phased array systems, attenuators are generally required to meet the following basic requirements: firstly, higher attenuation precision and larger attenuation dynamic range are needed, the side lobe level of an antenna gain pattern is reduced, and the signal detection sensitivity is improved; secondly, stable phase change is needed to realize accurate tracking of the target, so that the complexity of a phase calibration circuit is reduced; third, lower insertion loss is required to reduce the pressure of the signal path gain. The attenuator structure commonly used at present is a T-type attenuator or a pi-type attenuator, and the resistor in the attenuator is realized through a switching tube which is controlled by voltage to be conducted, for example, patent CN115242217A, and finally, the voltage-controlled attenuator with the attenuation changing along with the voltage is realized. In the patent CN115242217a, a voltage-controlled attenuator controlled by positive pressure is realized by improving a traditional T-shaped attenuator, but the structure can generate the problems of power compression, even device burnout, and the like when processing high-power signals.
Disclosure of Invention
In order to realize high-frequency good performance while processing high-power input signals, the application provides a high-frequency high-power voltage-controlled attenuator.
The application provides a voltage-controlled attenuator, which adopts the following technical scheme:
in a first aspect, a voltage controlled attenuator is provided, comprising:
n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; the N switch modules are controlled by the same first control voltage, so that the N switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance.
Preferably, the switch module is formed by a field effect transistor.
Preferably, the switch module is formed by sequentially connecting M field effect transistors in series; the source electrode of the first field effect tube is connected with one end of the inductor L, and the drain electrode of the first field effect tube is connected with the source electrode of the second field effect tube; the source electrode of the S field effect tube is connected with the drain electrode of the S-1 field effect tube, and the drain electrode of the S field effect tube is connected with the source electrode of the S+1 field effect tube; the Mth field effect transistor is connected with the ground end GND; s is a positive integer less than M.
Preferably, the gates of the M field effect transistors are all connected to a first control voltage.
Preferably, the first control voltage is a digital voltage; the digital voltage is changed according to a specified step, so that the voltage-controlled attenuator generates attenuation amplitude change according to the change of the first control voltage.
In a second aspect, there is also provided a voltage controlled attenuator comprising:
n microstrip lines TL connected IN series between the input terminal IN and the output terminal OUT, and a switch module is provided between one end of each microstrip line TL and the ground terminal GND; k switch modules in the N switch modules are controlled by the same first control voltage, so that the K switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; p switch modules in the N switch modules are controlled by the same second control voltage, so that the P switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; n=p+k.
In a third aspect, there is also provided a voltage controlled attenuator comprising:
n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; k switch modules in the N switch modules are controlled by the same first control voltage, so that the K switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; p switch modules in the N switch modules are controlled by the same second control voltage, so that the P switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; n=p+k.
In a fourth aspect, a voltage-controlled attenuation system is further provided, where the voltage-controlled attenuation system includes the voltage-controlled attenuator according to any one of the above technical solutions.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the power bearing and processing capacity of the attenuator is improved through pipe stacking;
2. the working frequency of the attenuator is improved through the series connection of a plurality of groups of stacked switching tubes;
3. the attenuation amount is adjusted by respectively controlling the power supply voltages of the two resistor modules, so that higher attenuation precision is realized.
Drawings
FIG. 1 is a logic block diagram of a voltage controlled attenuator;
FIG. 2 is a diagram of a first embodiment of a voltage controlled attenuator;
FIG. 3 is a diagram of a second embodiment of a voltage controlled attenuator;
FIG. 4 is a diagram of a third embodiment of a voltage controlled attenuator;
FIG. 5 is an attenuation plot of a voltage controlled attenuator;
fig. 6 is a voltage controlled attenuator power compression graph.
Description of the embodiments
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to fig. 1 to 6 and the embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Term interpretation:
an attenuator: the attenuator is typically a passive device made of a simple voltage divider network. The adjustable step attenuator is formed by switching between different resistances and the attenuator is continuously adjustable by using a potentiometer. For higher frequencies, a precisely matched low VSWR resistive network is used. Fixed attenuators in circuits are used to reduce voltage, dissipate power, and improve impedance matching. The attenuator pad or adapter is used to reduce the signal amplitude by a known amount to enable measurement, or to protect the measurement device from signal levels that might damage it, while measuring the signal. The attenuator is also used to "match" the impedance by reducing the apparent SWR (standing wave ratio).
Numerical control attenuator: the technical indexes of the numerical control attenuator mainly include: operating frequency band, insertion loss, amount of attenuation, attenuation accuracy, voltage standing wave ratio, additional phase shift, power capacity, etc. The traditional numerical control attenuator generally determines the attenuation bit number according to the attenuation range and the stepping, different attenuation bits adopt the combined design of attenuation structures such as T type, pi type, bridge T type, switch selection type and the like, the final insertion loss value is the superposition of the insertion loss values of all attenuation bits, and the area of a final chip is the sum of the areas of all attenuation bits. Generally, the structure used for the large attenuation bit occupies a larger chip area and generates a larger insertion loss.
The application provides a voltage-controlled attenuator, which adopts the following technical scheme:
in a first aspect, as shown in fig. 1, there is provided a voltage controlled attenuator comprising:
n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; the N switch modules are controlled by the same first control voltage, so that the N switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance. When the N switch modules are in a conducting state, namely equivalent to N minimum resistance states, the radio frequency signals are short-circuited to the bottom through the conducting switch tubes, and only small signals can be received by the output end, at the moment, the voltage-controlled attenuator is in an attenuation maximum state. When the N switch modules are in an off state, the N switch modules are equivalent to N capacitors, so that the circuit can be regarded as a multistage LC series resonance network, signals can completely pass through the circuit, and the voltage-controlled attenuator is in a minimum insertion loss state. When the N switch modules are all in the variable resistance area, the N switch modules are equivalent to N variable resistors with the resistance value controlled by the voltage, the signal reaching the output end is dependent on the voltage, the voltage is closer to 0V, the equivalent resistance is smaller, the signal at the output end is smaller, the voltage is approximately trended to-2V, the equivalent resistance is larger, the signal reaching the output end is larger, and finally the voltage-controlled attenuation function is realized.
Preferably, as shown in fig. 2, the switch module is formed by a field effect transistor. The field effect transistor is used as a switching tube, so that the aim can be fulfilled. Whether P-channel or N-channel field effect transistors.
Preferably, the switch module is formed by sequentially connecting M field effect transistors in series; the source electrode of the first field effect tube is connected with one end of the inductor L, and the drain electrode of the first field effect tube is connected with the source electrode of the second field effect tube; the source electrode of the S field effect tube is connected with the drain electrode of the S-1 field effect tube, and the drain electrode of the S field effect tube is connected with the source electrode of the S+1 field effect tube; the Mth field effect transistor is connected with the ground end GND; s is a positive integer less than M. The field effect transistors connected in parallel with the ground can process and bear larger input power through stacking.
Preferably, as shown in fig. 2, the gates of the M field effect transistors are all connected to a first control voltage. And the grid electrode receives a first control voltage to control the field effect transistor to be in a state of on, off or variable resistance.
Preferably, the first control voltage is a digital voltage; the digital voltage is changed according to a specified step, so that the voltage-controlled attenuator generates attenuation amplitude change according to the change of the first control voltage. The voltage-controlled attenuator is generally matched with an ADC voltage circuit when being used in a system, the circuit is used for generating digital voltage in a range of 0 to-2V according to certain steps (such as 0.05V), and then the digital voltage is connected to a control end of the voltage-controlled attenuator module, namely a grid electrode of a field effect tube, so that the single-voltage-controlled attenuator module can realize (0- (-2))/0.05 states.
In a second aspect, as shown in fig. 3, there is also provided a voltage controlled attenuator, including:
n microstrip lines TL connected IN series between the input terminal IN and the output terminal OUT, and a switch module is provided between one end of each microstrip line TL and the ground terminal GND; k switch modules in the N switch modules are controlled by the same first control voltage, so that the K switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; p switch modules in the N switch modules are controlled by the same second control voltage, so that the P switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; n=p+k. In this embodiment, the microstrip line TL is used to replace the inductance L, so as to implement the voltage-controlled attenuator.
In a third aspect, as shown in fig. 4, there is also provided a voltage controlled attenuator, including:
n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; k switch modules in the N switch modules are controlled by the same first control voltage, so that the K switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; p switch modules in the N switch modules are controlled by the same second control voltage, so that the P switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; n=p+k. In this embodiment, there are two control voltages. The first control voltage and the second control voltage are adopted to respectively control the switch module, so that the attenuation precision of the voltage-controlled attenuator can be improved. For example, in this embodiment, since there are two attenuation modules, the two resistance modules are controlled by different voltages, the control state is doubled as that of the single voltage control mode, thereby achieving higher attenuation accuracy.
In a fourth aspect, a voltage-controlled attenuation system is further provided, where the voltage-controlled attenuation system includes the voltage-controlled attenuator according to any one of the above technical solutions.
In the embodiment, a 0.15um process is adopted, the structure is shown in fig. 4, the size of a switching tube in the attenuation module 1 is 4 x 50um, and the grid ends of the switching tube are connected to an external first control voltage through resistors; the size of the switching tube in the attenuation module 2 is 4 x 35um, and the grid ends of the switching tube are connected to an external second control voltage through resistors; the resistance of the grid end resistors of all the switching tubes is 10KΩ, each attenuation module adopts four groups of tube structures connected in parallel to the grounding end, each group of attenuation modules further comprises four stacked switching tubes, each group of switching tubes are connected in series through an inductor L in a cascading manner, and the inductance value of each group of switching tubes is within the range of 0.1 nH-0.5 nH.
As shown in FIG. 5, when V1/V2 is taken to be 0 to-2V, the S21 curve is changed along with the frequency, the horizontal axis is the frequency, the unit Ghz, the vertical axis is the S21 insertion loss value, the unit dB is the attenuation range, the average value of the attenuation range is more than 45dB, and the ground state insertion loss value is-3 dB at the 50G position. As shown in fig. 6, the power characteristics of this example are shown, the horizontal axis represents the input power value, and the vertical axis represents the insertion loss value, and the power compression point is about 30 dBm. The voltage controlled attenuator in this example achieves good high frequency characteristics and power characteristics.
The number of resistor modules, the number of parallel switch tube groups included in each resistor module, and the number of stacked switch tubes included in each group of switch tubes are not limited to the numbers illustrated in the above figures.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the power bearing and processing capacity of the attenuator is improved through pipe stacking;
2. the working frequency of the attenuator is improved through the series connection of a plurality of groups of stacked switching tubes;
3. the attenuation amount is adjusted by respectively controlling the power supply voltages of the two resistor modules, so that higher attenuation precision is realized.
The foregoing description of the preferred embodiments of the application is not intended to limit the scope of the application in any way, including the abstract and drawings, in which case any feature disclosed in this specification (including abstract and drawings) may be replaced by alternative features serving the same, equivalent purpose, unless expressly stated otherwise. That is, each feature is one example only of a generic series of equivalent or similar features, unless expressly stated otherwise.
Claims (8)
1. A voltage controlled attenuator, comprising:
n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; the N switch modules are controlled by the same first control voltage, so that the N switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance.
2. The voltage controlled attenuator of claim 1, wherein: the switch module is formed by a field effect transistor.
3. The voltage controlled attenuator of claim 2, wherein: the switch module is formed by sequentially connecting M field effect transistors in series; the source electrode of the first field effect tube is connected with one end of the inductor L, and the drain electrode of the first field effect tube is connected with the source electrode of the second field effect tube; the source electrode of the S field effect tube is connected with the drain electrode of the S-1 field effect tube, and the drain electrode of the S field effect tube is connected with the source electrode of the S+1 field effect tube; the Mth field effect transistor is connected with the ground end GND; s is a positive integer less than M.
4. A voltage controlled attenuator according to claim 3, characterized in that: and the grid electrodes of the M field effect transistors are connected with a first control voltage.
5. The voltage controlled attenuator of claim 4, wherein: the first control voltage is a digital voltage; the digital voltage is changed according to a specified step, so that the voltage-controlled attenuator generates attenuation amplitude change according to the change of the first control voltage.
6. A voltage controlled attenuator, comprising:
n microstrip lines TL connected IN series between the input terminal IN and the output terminal OUT, and a switch module is provided between one end of each microstrip line TL and the ground terminal GND; k switch modules in the N switch modules are controlled by the same first control voltage, so that the K switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; p switch modules in the N switch modules are controlled by the same second control voltage, so that the P switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; n=p+k.
7. A voltage controlled attenuator, comprising:
n inductors L connected IN series between the input terminal IN and the output terminal OUT, and a switching module is provided between one end of each inductor L and the ground terminal GND; k switch modules in the N switch modules are controlled by the same first control voltage, so that the K switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; p switch modules in the N switch modules are controlled by the same second control voltage, so that the P switch modules can be simultaneously and equivalently in a state of minimum resistance, capacitance or variable resistance; n=p+k.
8. A voltage controlled attenuation system comprising the voltage controlled attenuator of any of claims 1-7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310896265.3A CN116667806A (en) | 2023-07-21 | 2023-07-21 | Voltage controlled attenuator and system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310896265.3A CN116667806A (en) | 2023-07-21 | 2023-07-21 | Voltage controlled attenuator and system |
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| CN116667806A true CN116667806A (en) | 2023-08-29 |
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| CN202310896265.3A Pending CN116667806A (en) | 2023-07-21 | 2023-07-21 | Voltage controlled attenuator and system |
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| US20220131531A1 (en) * | 2020-10-23 | 2022-04-28 | Korea University Research And Business Foundation | Compact digital attenuator |
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