CN116667647B - Driving method of pulse plasma power supply full-bridge inverter circuit - Google Patents
Driving method of pulse plasma power supply full-bridge inverter circuit Download PDFInfo
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- CN116667647B CN116667647B CN202310911702.4A CN202310911702A CN116667647B CN 116667647 B CN116667647 B CN 116667647B CN 202310911702 A CN202310911702 A CN 202310911702A CN 116667647 B CN116667647 B CN 116667647B
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000007921 spray Substances 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 238000009832 plasma treatment Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
- H02M1/385—Means for preventing simultaneous conduction of switches with means for correcting output voltage deviations introduced by the dead time
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53873—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with digital control
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inverter Devices (AREA)
Abstract
The invention relates to the technical field of driving of a full-bridge inverter circuit of a plasma power supply, and particularly discloses a driving method of the full-bridge inverter circuit of a pulse plasma power supply, which uses STM32 series chips as a main controller to emit four PWM control signals with the same positive duty ratio; the PWM control signal is sent out from the main controller and then is output to a driving circuit of a rear stage, and the PWM control signal is isolated and amplified, so that enough voltage is available for driving a power switch tube of a full-bridge inverter circuit of the rear stage; the driving signal with a fixed duty ratio is used for controlling the power switching tube of the full-bridge inversion, so that voltage and current with short rise time and fall time can be obtained during inversion, and therefore, plasma ionization degree generated by the spray gun in the constant power mode operation is high, continuous arcing time is short, and heat transfer time is short; therefore, on the premise of improving the plasma treatment effect, the temperature of the plasma is reduced, the oxidation speed of the electrode nozzle is reduced, and the generation of particles is reduced.
Description
Technical Field
The invention belongs to the technical field of driving of a full-bridge inverter circuit of a plasma power supply, and particularly relates to a driving method of a full-bridge inverter circuit of a pulse plasma power supply.
Background
When the conventional plasma power supply performs full-bridge inversion output, a special phase-shifting full-bridge chip (such as UCC 28950) is selected to drive an inversion switching tube to obtain high-frequency inversion voltage; then a step-up transformer is used for obtaining high-frequency and high-voltage, and finally, plasma is generated in a plasma special spray gun; wherein the adjustment of the output power is realized by adjusting the phase shift angle.
However, the above-mentioned method of driving the inverter switching transistor using the phase-shifting full-bridge dedicated chip still has the following drawbacks:
the plasma generated by the spray gun in the constant power mode of the plasma power supply has the phenomena of weak ionic strength, poor treatment effect and high plasma temperature, so that a driving method of a full-bridge inverter circuit of the pulse plasma power supply is needed to solve the problems.
Disclosure of Invention
The invention aims to provide a driving method of a pulse plasma power full-bridge inverter circuit, which uses a driving signal with a fixed duty ratio to control a power switch tube of full-bridge inversion, so that voltage and current with short rise time and fall time can be obtained during inversion, and therefore, plasma generated by a spray gun in a constant power mode work has high ionization degree, short continuous arcing time and short heat transfer time, so as to solve the problems in the prior art.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a driving method of a pulse plasma power supply full-bridge inverter circuit comprises the following steps:
s1, using STM32 series chips as a main controller, and transmitting four PWM control signals with the same positive duty ratio;
s2, after the PWM control signal is sent out from the main controller, a digital isolation chip is introduced, the peripheral circuit and the main control circuit are isolated, and then the isolated signals are output to a driving circuit of a later stage;
s3, after the driving circuit receives the PWM control signal, the PWM control signal is isolated and amplified, so that enough voltage is available to drive a power switch tube of the rear-stage full-bridge inverter circuit, if the rear-stage power switch tube is damaged, the driving circuit can send an alarm signal and timely cut off the driving signal, and then the alarm signal is transmitted to the main controller;
s4, after receiving the driving signal, a power switching tube in the full-bridge inverter circuit switches according to the control logic of the driving signal to finish inversion of direct current on a bus into corresponding alternating current, and then outputs the alternating current to a step-up transformer of a later stage;
s5, boosting the inverted alternating current through a boosting transformer, so that the alternating current can break down the atmosphere in the spray gun, and plasma is generated and sprayed out of the spray gun.
Preferably, in step S1, the four PWM control signals generated by the main controller are respectively: the PWM control circuit comprises a PWM_FB_A signal, a PWM_FB_B signal, a PWM_FB_C signal and a PWM_FB_D, wherein the four PWM control signals are used as power switching tubes in a control full-bridge inverter circuit to complete inversion work, and the PWM_FB_A signal and the PWM_FB_C signal have the same duty ratio and the same phase; the PWM_FB_B signal and the PWM_FB_D signal have the same duty ratio and the same phase; the pwm_fb_a signal and the pwm_fb_c signal are the same duty cycle but 180 ° out of phase with the pwm_fb_b signal and the pwm_fb_d signal.
Preferably, in step S2, the digital isolation chip converts the 3.3V driving signal generated by the main controller into a 5V driving signal, but the duty ratio and the phase of the driving signal are not changed, so that the normal operation of the main controller is ensured, the influence of peripheral circuits is avoided, the carrying capacity of the driving signal is improved to a certain extent, and the anti-interference performance is improved.
Preferably, the driving circuit is provided with four groups, and four groups driving circuit all is connected with main control unit, every group driving circuit all includes chip U4, chip U5 and chip U3, chip U5's two feet are connected with current limiting resistor R11 and resistance R13, resistance R13's one end ground connection, chip U3's four feet are connected with resistance R4, chip U3's one foot and two feet all are connected with chip U4's two feet and three feet, chip U4's eight feet are connected with resistance R14, resistance R14's one end is connected with chip U5's four feet, chip U4's one foot is connected with electric capacity C4 and electric capacity C5 respectively, electric capacity C4's one end is connected with LED1, LED 1's one end resistance R1, electric capacity C5's one end is connected with LED2, LED 2's one end is connected with resistance R2, resistance R1 and resistance R2's one end is connected with 5V voltage.
Preferably, when the driving circuit works, after the PWM control signal is sent, the tenth pin and the eleventh pin of the chip U4 send corresponding high-low levels, the rear stage power switch tube is driven by the corresponding high-low levels, the fourteenth pin of the chip U4 is a rear stage circuit overcurrent monitoring pin, when the rear stage circuit is short-circuited or the current is overlarge, the voltage of the fourteenth pin of the chip U4 is raised, when the voltage of the fourteenth pin of the chip U4 is greater than 9V, the three pins of the chip U4 output low levels, the LED1 is turned on at this time, the input end of the resistor R4 is pulled down from the high level to the low level, and the driving circuit automatically turns off the driving signal output to the full-bridge inverter power switch tube.
Preferably, in step S3, the driving circuit sends an alarm signal to the main controller through the isolation chip U2, where the alarm signal includes an alm_mosfet_a signal, an alm_mosfet_b signal, an alm_mosfet_c signal, and an alm_mosfet_d signal, and the main controller receives the alarm signal and then turns off the output of the driving signal to stop the whole system.
Preferably, in step S4, the full-bridge inverter circuit includes a bipolar transistor IGBT1, a bipolar transistor IGBT2, a bipolar transistor IGBT3, and a bipolar transistor IGBT4, three pins of the bipolar transistor IGBT1 are connected with three pins of the bipolar transistor IGBT2, a resistor R16 and a capacitor C12 that are serially connected are connected between three pins of the bipolar transistor IGBT1 and four pins, a resistor R15 and a capacitor C11 that are serially connected between three pins of the bipolar transistor IGBT2 and four pins of the bipolar transistor IGBT4 are connected, three pins of the bipolar transistor IGBT2 and three pins of the bipolar transistor IGBT4 are connected with a resistor R17 and a capacitor C13 that are serially connected between three pins of the bipolar transistor IGBT4 and four pins of the bipolar transistor IGBT3, three pins of the bipolar transistor IGBT3 and four pins of the bipolar transistor IGBT1 are connected, and a bipolar transistor 3 is connected with a bipolar transistor input terminal of the bipolar IGBT1 and the bipolar transistor 2, and a bipolar transistor input terminal of the bipolar IGBT1 is connected with a bipolar transistor 3.
Preferably, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are controlled by the pwm_fb_a signal and the pwm_fb_c signal, the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are controlled by the pwm_fb_b and the pwm_fb_d signal, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are turned on and off simultaneously, and the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are turned on and off simultaneously.
Preferably, the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are a set of signals, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are another set of signals, and certain turn-on dead zones are required to be set for the two sets of signals to prevent the occurrence of the short circuit condition, so that the situation that the bipolar transistor IGBT2 and the bipolar transistor IGBT3 cannot be turned on simultaneously with the bipolar transistor IGBT1 and the bipolar transistor IGBT4 occurs.
Preferably, in step S5, the ratio of the ratio adopted by the step-up transformer is 1:20, the alternating current voltage of the full-bridge inverter circuit is 200V-800V, the compressed air of 0.2MPa is used in the spray gun, and the alternating current of the full-bridge inverter circuit is required to be boosted to 2000V-15000V when the atmosphere in the spray gun breaks down.
Compared with the prior art, the driving method of the pulse plasma power supply full-bridge inverter circuit provided by the invention has the following advantages:
the invention mainly uses a driving signal with a fixed duty ratio to control the power switch tube of full-bridge inversion, so that voltage and current with short rise time and fall time can be obtained during inversion, and therefore, plasma ionization degree generated by the spray gun in the constant power mode operation is high, continuous arcing time is short, and heat transfer time is short; thereby reducing the plasma temperature on the premise of improving the plasma treatment effect; and the oxidation speed of the electrode nozzle is reduced, and the generation of particles is reduced.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a circuit diagram of a digital isolation chip according to the present invention;
FIG. 3 is a circuit diagram of a driving circuit according to the present invention;
FIG. 4 is a circuit diagram of an isolated chip U2 of the present invention;
fig. 5 is a circuit diagram of the full-bridge inverter circuit of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a driving method of a pulse plasma power supply full-bridge inverter circuit as shown in fig. 1-5, which comprises the following steps:
s1, using STM32 series chips as a main controller, and transmitting four PWM control signals with the same positive duty ratio;
the four PWM control signals generated by the main controller are respectively as follows: the PWM control circuit comprises a PWM_FB_A signal, a PWM_FB_B signal, a PWM_FB_C signal and a PWM_FB_D, wherein the four PWM control signals are used as power switching tubes in a control full-bridge inverter circuit to complete inversion work, and the PWM_FB_A signal and the PWM_FB_C signal have the same duty ratio and the same phase; the PWM_FB_B signal and the PWM_FB_D signal have the same duty ratio and the same phase; the pwm_fb_a signal and the pwm_fb_c signal are the same duty cycle but 180 ° out of phase with the pwm_fb_b signal and the pwm_fb_d signal.
S2, after the PWM control signal is sent out from the main controller, a digital isolation chip U1 is introduced, the peripheral circuit and the main control circuit are isolated, and then the signal is output to a driving circuit of a later stage;
the digital isolation chip U1 converts a 3.3V driving signal generated by the main controller into a 5V driving signal, but the duty ratio and the phase of the driving signal are not changed, so that the normal operation of the main controller is ensured, the influence of a peripheral circuit is avoided, the carrying capacity of the driving signal is improved to a certain extent, and the anti-interference performance is improved, as shown in a circuit diagram of the digital isolation chip U1 in fig. 2.
The driving circuit is provided with four groups, and four groups driving circuit all is connected with main control unit, as shown in fig. 3, every group driving circuit all includes chip U4, chip U5 and chip U3, chip U5's two feet are connected with current limiting resistor R11 and resistance R13, resistance R13's one end ground connection, chip U3's four feet are connected with resistance R4, chip U3's one foot and two feet all are connected with chip U4's two feet and three feet, chip U4's eight feet are connected with resistance R14, chip U4's one end is connected with chip U5's four feet, chip U4's one foot is connected with electric capacity C4 and electric capacity C5 respectively, electric capacity C4's one end is connected with LED1, LED 1's one end resistance R1, electric capacity C5's one end is connected with LED2, LED 2's one end is connected with resistance R1 and resistance R2's one end is connected with 5V voltage.
One group of driving circuits is selected for principle explanation: firstly, the signal PWM_AD is input to the chip U5 after passing through the current limiting resistor R11 and the impedance matching resistor R13, the chip U5 is an inverter, and is used for overturning the driving signal, and then the signal PWM_AD is input to the eight pins of the isolation driving chip U4 through the resistor R14, so that the advantages are that: and only when the driving signal PWM_AD is at a high level, the rear-stage isolation driving chip can send out a corresponding driving signal, otherwise, no signal is sent out at the rear stage, and the problem that the rear-stage isolation driving chip sends out an error driving waveform due to interference to cause circuit faults is avoided.
When the driving circuit works, after the PWM control signal is sent out, the tenth pin and the eleventh pin of the chip U4 can send out corresponding high and low levels, the rear-stage power switch tube is driven by the corresponding high and low levels, the fourteenth pin of the chip U4 is a rear-stage circuit overcurrent monitoring pin, when the rear-stage circuit is in short circuit or overlarge in current, the voltage of the fourteenth pin of the chip U4 is raised, when the voltage of the fourteenth pin of the chip U4 is larger than 9V, the three pins of the chip U4 can output low levels (normally output high levels), the LED1 is lightened, the input end of the resistor R4 is pulled down from the high level to the low level (in fig. 3, SO1 is changed from 5V to 0V), the driving circuit can automatically close a driving signal output to the full-bridge inverter power switch tube, if the voltage of the twelfth pin of the chip U4 is smaller than a certain value, the second pin of the chip U4 can output low levels (normally output high levels), the LED2 can be lightened, and the input end of the chip U4 can be simultaneously turned off from the high level to the low level (when the inverter circuit is turned off from the low level to the 0V).
S3, after the driving circuit receives the PWM control signal, the PWM control signal is isolated and amplified, so that enough voltage is available to drive a power switch tube of the rear-stage full-bridge inverter circuit, if the rear-stage power switch tube is damaged, the driving circuit can send an alarm signal and timely cut off the driving signal, and then the alarm signal is transmitted to the main controller;
the driving circuit sends an alarm signal to the main controller through the isolation chip U2, wherein the alarm signal comprises an ALM_MOSFET_A signal, an ALM_MOSFET_B signal, an ALM_MOSFET_C signal and an ALM_MOSFET_D signal, and the main controller can immediately turn off the output of the driving signal after receiving the alarm signal, so that the whole system stops working, and the circuit diagram of the isolation chip U2 is shown in fig. 4.
S4, after receiving the driving signal, a power switching tube in the full-bridge inverter circuit switches according to the control logic of the driving signal to finish inversion of direct current on a bus into corresponding alternating current, and then outputs the alternating current to a step-up transformer of a later stage;
as shown in fig. 5, the full-bridge inverter circuit includes a bipolar transistor IGBT1, a bipolar transistor IGBT2, a bipolar transistor IGBT3 and a bipolar transistor IGBT4, three pins of the bipolar transistor IGBT1 are connected with three pins of the bipolar transistor IGBT2, a resistor R16 and a capacitor C12 which are arranged in series are connected between three pins of the bipolar transistor IGBT1 and four pins, a resistor R15 and a capacitor C11 which are arranged in series are connected between three pins of the bipolar transistor IGBT2 and four pins, four pins of the bipolar transistor IGBT2 are connected with three pins of the bipolar transistor IGBT4, a resistor R17 and a capacitor C13 which are arranged in series are connected between three pins of the bipolar transistor IGBT4 and four pins of the bipolar transistor IGBT3, three pins of the bipolar transistor IGBT3 are connected with four pins of the bipolar transistor IGBT1, and a bipolar transistor IGBT3 is connected with a bipolar terminal of the bipolar transistor IGBT2, and a bipolar transistor 2 is connected with a bipolar terminal of the bipolar transistor 3, and a bipolar transistor 1 is connected with a bipolar terminal of the bipolar transistor 2.
The bipolar transistor IGBT1 and the bipolar transistor IGBT4 are controlled by PWM_FB_A signals and PWM_FB_C signals, the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are controlled by PWM_FB_B and PWM_FB_D signals, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are simultaneously turned on and turned off, and the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are simultaneously turned on and turned off.
The bipolar transistor IGBT2 and the bipolar transistor IGBT3 are a group of signals, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are another group of signals, and certain opening dead zones are required to be set for the two groups of signals so as to prevent the occurrence of short circuit, so that the situation that the bipolar transistor IGBT2 and the bipolar transistor IGBT3 cannot be conducted simultaneously with the bipolar transistor IGBT1 and the bipolar transistor IGBT4 occurs, and the suggested duty ratio is 15-24% according to the different structures of the plasma spray guns.
S5, boosting the inverted alternating current through a boosting transformer (the full-bridge inverter circuit in the embodiment inverts 300-400V direct current into 20-30 KHz alternating current), so that the alternating current can break down the atmosphere in the spray gun, and plasma is generated and sprayed out of the spray gun.
The ratio of the adopted ratio of the step-up transformer is 1:20, the alternating current voltage of the full-bridge inverter circuit is 200V-800V, compressed air of 0.2MPa is used in the spray gun, the alternating current of the full-bridge inverter circuit is required to be boosted to 2000V-15000V when the atmosphere in the spray gun breaks down, and the power switching tube in the full-bridge inverter is driven by adopting control logic with fixed duty ratio, so that if the load of the rear-stage plasma spray gun is not changed and the input voltage is not changed, the output power cannot be regulated; in order to realize that the constant power can be adjusted and the plasma spray gun can work normally, the input direct current voltage needs to be adjusted according to the set power, and the voltage required for generating the plasma is at least 2000V according to the prior plasma spray gun, because the voltage ratio adopted by the booster transformer of the later stage of the invention is 1:20, so that the voltage of the input direct current in the circuit is 200V at the minimum, and the highest voltage can be adjusted according to different power requirements and the characteristics of the plasma gun head.
In summary, the driving signal with a fixed duty ratio is used for controlling the power switch tube of the full-bridge inversion, so that voltage and current with short rise time and fall time can be obtained during inversion, and therefore, plasma ionization degree generated by the spray gun in the constant power mode operation is high, continuous arcing time is short, and heat transfer time is short; thereby reducing the plasma temperature on the premise of improving the plasma treatment effect; and the oxidation speed of the electrode nozzle is reduced, and the generation of particles is reduced.
Finally, it should be noted that: the foregoing description is only illustrative of the preferred embodiments of the present invention, and although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements or changes may be made without departing from the spirit and principles of the present invention.
Claims (7)
1. A driving method of a pulse plasma power supply full-bridge inverter circuit is characterized by comprising the following steps: the method comprises the following steps:
s1, using STM32 series chips as a main controller, and transmitting four PWM control signals with the same positive duty ratio; the four PWM control signals generated by the main controller are respectively as follows: the PWM control signals are used for controlling a power switch tube in the full-bridge inverter circuit to complete inversion work, wherein the PWM_FB_A signal and the PWM_FB_C signal are identical in duty ratio and phase; the PWM_FB_B signal and the PWM_FB_D signal have the same duty ratio and the same phase; the PWM_FB_A signal and the PWM_FB_B signal have the same duty cycle but 180 degrees out of phase;
s2, after the PWM control signal is sent out from the main controller, a digital isolation chip is introduced to isolate the peripheral circuit from the main control circuit, and then the signal is output to a driving circuit of a later stage;
s3, after the driving circuit receives the PWM control signal, the PWM control signal is isolated and amplified, so that enough voltage is available to drive a power switch tube of the rear-stage full-bridge inverter circuit, if the rear-stage power switch tube is damaged, the driving circuit can send an alarm signal and timely cut off the driving signal, and then the alarm signal is transmitted to the main controller;
s4, after receiving the driving signal, a power switching tube in the full-bridge inverter circuit switches according to the control logic of the driving signal to finish inversion of direct current on a bus into corresponding alternating current, and then outputs the alternating current to a step-up transformer of a later stage;
s5, boosting the inverted alternating current through a boosting transformer, so that the alternating current can break down the atmosphere in the spray gun, and plasma is generated and sprayed out of the spray gun.
2. The driving method of the full-bridge inverter circuit of the pulse plasma power supply according to claim 1, wherein: in step S2, the digital isolation chip converts the 3.3V driving signal generated by the main controller into a 5V driving signal, but the duty ratio and phase of the driving signal are not changed, so that the normal operation of the main controller is ensured, the influence of peripheral circuits is avoided, the carrying capacity of the driving signal is improved to a certain extent, and the anti-interference performance is improved.
3. The driving method of the full-bridge inverter circuit of the pulse plasma power supply according to claim 1, wherein: in step S3, the driving circuit sends an alarm signal to the main controller through the isolation chip U2, where the alarm signal includes an alm_mosfet_a signal, an alm_mosfet_b signal, an alm_mosfet_c signal, and an alm_mosfet_d signal, and the main controller receives the alarm signal and then immediately turns off the output of the driving signal, so that the whole system stops working.
4. The driving method of the full-bridge inverter circuit of the pulse plasma power supply according to claim 1, wherein: in step S4, the full-bridge inverter circuit includes a bipolar transistor IGBT1, a bipolar transistor IGBT2, a bipolar transistor IGBT3, and a bipolar transistor IGBT4, three pins of the bipolar transistor IGBT1 are connected with three pins of the bipolar transistor IGBT2, a resistor R16 and a capacitor C12 that are serially connected between three pins of the bipolar transistor IGBT1 and four pins, a resistor R15 and a capacitor C11 that are serially connected between three pins of the bipolar transistor IGBT2 and four pins of the bipolar transistor IGBT4 are connected, a resistor R17 and a capacitor C13 that are serially connected between three pins of the bipolar transistor IGBT4 and four pins of the bipolar transistor IGBT3 are connected, three pins of the bipolar transistor IGBT3 and four pins of the bipolar transistor IGBT1 are connected, and a bipolar transistor 3 and a bipolar transistor IGBT2 are connected with the bipolar terminal of the bipolar transistor IGBT 2.
5. The driving method of the full-bridge inverter circuit of the pulse plasma power supply according to claim 4, wherein: the bipolar transistor IGBT1 is controlled by a PWM_FB_A signal, the bipolar transistor IGBT4 is controlled by a PWM_FB_C signal, the bipolar transistor IGBT2 is controlled by a PWM_FB_B signal, the bipolar transistor IGBT3 is controlled by a PWM_FB_D signal, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are simultaneously turned on and off, and the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are simultaneously turned on and off.
6. The driving method of the full-bridge inverter circuit of the pulse plasma power supply according to claim 5, wherein: the bipolar transistor IGBT2 and the bipolar transistor IGBT3 are a set of signals, the bipolar transistor IGBT1 and the bipolar transistor IGBT4 are another set of signals, and certain turn-on dead zones are required to be set for the two sets of signals to prevent the occurrence of short circuit, so that the bipolar transistor IGBT2 and the bipolar transistor IGBT3 cannot be simultaneously turned on with the bipolar transistor IGBT1 and the bipolar transistor IGBT 4.
7. The driving method of the full-bridge inverter circuit of the pulse plasma power supply according to claim 1, wherein: in step S5, the ratio of turns adopted by the step-up transformer is 1:20, the alternating current voltage of the full-bridge inverter circuit is 200V-800V, the compressed air of 0.2MPa is used in the spray gun, and the alternating current of the full-bridge inverter circuit is required to be boosted to 2000V-15000V when the atmosphere in the spray gun breaks down.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1852959A1 (en) * | 2006-05-05 | 2007-11-07 | HÜTTINGER Elektronik GmbH + Co. KG | Power Supply for Medium Frequency Plasma Generator |
| CN102223086A (en) * | 2011-06-24 | 2011-10-19 | 深圳华意隆电气股份有限公司 | Generalized active soft-switching inversion type welding and cutting power circuit |
| CN204442195U (en) * | 2015-03-31 | 2015-07-01 | 西安科技大学 | A kind of have the single-phase full bridge inverter main circuit driving defencive function |
| US20160087626A1 (en) * | 2014-09-19 | 2016-03-24 | Renesas Electronics Corporation | Power control circuit |
| CN206962710U (en) * | 2017-10-25 | 2018-02-02 | 吉林大学 | A kind of double-plasma ion source discharge power supply |
| CN113765412A (en) * | 2021-09-23 | 2021-12-07 | 固赢科技(深圳)有限公司 | Medium-frequency square wave plasma excitation power supply |
| CN116191906A (en) * | 2023-03-07 | 2023-05-30 | 东莞市晟鼎精密仪器有限公司 | Intelligent monitoring system and method for double-pulse plasma power supply |
-
2023
- 2023-07-25 CN CN202310911702.4A patent/CN116667647B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1852959A1 (en) * | 2006-05-05 | 2007-11-07 | HÜTTINGER Elektronik GmbH + Co. KG | Power Supply for Medium Frequency Plasma Generator |
| CN102223086A (en) * | 2011-06-24 | 2011-10-19 | 深圳华意隆电气股份有限公司 | Generalized active soft-switching inversion type welding and cutting power circuit |
| US20160087626A1 (en) * | 2014-09-19 | 2016-03-24 | Renesas Electronics Corporation | Power control circuit |
| CN204442195U (en) * | 2015-03-31 | 2015-07-01 | 西安科技大学 | A kind of have the single-phase full bridge inverter main circuit driving defencive function |
| CN206962710U (en) * | 2017-10-25 | 2018-02-02 | 吉林大学 | A kind of double-plasma ion source discharge power supply |
| CN113765412A (en) * | 2021-09-23 | 2021-12-07 | 固赢科技(深圳)有限公司 | Medium-frequency square wave plasma excitation power supply |
| CN116191906A (en) * | 2023-03-07 | 2023-05-30 | 东莞市晟鼎精密仪器有限公司 | Intelligent monitoring system and method for double-pulse plasma power supply |
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