CN110888033A - IGBT series connection voltage-sharing module control device and control method - Google Patents
IGBT series connection voltage-sharing module control device and control method Download PDFInfo
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- CN110888033A CN110888033A CN201911133605.7A CN201911133605A CN110888033A CN 110888033 A CN110888033 A CN 110888033A CN 201911133605 A CN201911133605 A CN 201911133605A CN 110888033 A CN110888033 A CN 110888033A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
Abstract
The invention provides a control device and a control method for an IGBT series voltage-sharing module, which comprises a direct-current power supply, a test sample valve, an auxiliary valve, a reactor L, a charging switch S and a driving series control unit, wherein the direct-current power supply is connected with the test sample valve; the test valve and the auxiliary valve both comprise an IGBT and a capacitor; the sample valve and the auxiliary valve are connected with the charging switch S in series, and the direct-current power supply is connected to two ends of the auxiliary valve in parallel; the IGBTs in the test sample valve and the auxiliary valve are respectively connected with the driving series control unit; the test valve and the auxiliary valve are connected through the reactor L, so that the most basic voltage-sharing characteristic can be tested, and the energy exchange between the auxiliary valve and the test valve can be realized, thereby realizing the test of the voltage-sharing characteristic of the high-power IGBT; the technical scheme provided by the invention adopts a mode of combining the active control circuit with the buffer circuit, is beneficial to realizing the series voltage sharing of the IGBTs, and has the potential capability of expanding to the series voltage sharing of a plurality of IGBTs; and the series voltage-sharing characteristic of the SiC-IGBT can be tested under the conditions of different voltage stress, current stress and thermal stress.
Description
Technical Field
The invention relates to the technical field of flexible power transmission, in particular to a control device and a control method for an IGBT series voltage-sharing module.
Background
The energy revolution puts higher requirements on the safety, reliability, controllability and flexibility of a power grid, the wide application of the flexible alternating-current and direct-current power transmission device becomes the development trend of the future power grid, and a high-voltage and high-frequency fully-controlled device is the core of flexible direct-current power transmission equipment. The current high-power high-voltage high-frequency full-control device is mainly based on silicon materials, a silicon insulated gate bipolar transistor (namely IGBT) is taken as a representative, and the highest voltage can reach 6.5 kV. In order to further improve the withstand voltage of a single device, a SiC material having more excellent physical properties is required. The SiC IGBT has the advantage of conductance modulation, and the number of series devices and auxiliary equipment is greatly reduced, so that the loss, the volume and the cost of electric equipment are greatly reduced, and the reliability, the flexibility and the applicability are improved.
The series technology that can be used in dc power transmission is classified into direct series of devices and multilevel series (modular multilevel or cascade multilevel). The direct series connection technology of the devices has the advantages of small number of used devices, simple topological structure, simple control protection and the like, and in addition, the requirement of medium and low voltage direct current power transmission can be met only by connecting a small number of IGBTs in series, so that the medium and low voltage direct current power transmission topological structure is greatly simplified. When the high-power SiC-IGBT device is directly connected in series for use, the switching speed is extremely high and the switching is basically completed within a few microseconds, so that the requirement on the voltage balance of each device is very high in the operation process.
In the prior art, the voltage-sharing characteristic of the series-connected IGBTs is generally directly checked by a special device, although the most basic voltage-sharing characteristic check can be completed, the voltage-sharing characteristic of the small-power IGBT can only be detected, and the voltage-sharing characteristic of the large-power IGBT cannot be checked.
Disclosure of Invention
In order to overcome the defect that the voltage-sharing characteristic of the high-power IGBT cannot be checked in the prior art, the invention provides a control device and a control method of an IGBT series voltage-sharing module, wherein the control device comprises a direct-current power supply, a test sample valve, an auxiliary valve, a reactor L, a charging switch S and a driving series control unit; the sample valve and the auxiliary valve both comprise an IGBT and a capacitor; the sample valve and the auxiliary valve are connected with the charging switch S in series, and the direct-current power supply is connected to two ends of the auxiliary valve in parallel; the IGBTs in the test sample valve and the auxiliary valve are respectively connected with the driving series control unit; the test valve and the auxiliary valve are connected through the reactor L, so that the most basic voltage-sharing characteristic can be tested, the energy exchange between the auxiliary valve and the test valve can be realized through the charging and discharging of the first capacitor C1 and the second capacitor C2, and the voltage-sharing characteristic of the high-power IGBT can be tested.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
the invention provides a control device of an IGBT (insulated gate bipolar transistor) series voltage-sharing module, which comprises a direct-current power supply, a test sample valve, an auxiliary valve, a reactor L, a charging switch S and a driving series control unit, wherein the direct-current power supply is connected with the test sample valve; the sample valve and the auxiliary valve both comprise an IGBT and a capacitor;
the test sample valve and the auxiliary valve are connected with the charging switch S in series, and the direct-current power supply is connected to two ends of the auxiliary valve in parallel;
the IGBTs in the test sample valve and the auxiliary valve are respectively connected with the driving series control unit;
the test sample valve and the auxiliary valve are connected through a reactor L.
The number of the IGBTs in the test sample valve is multiple, and the test sample valve further comprises a driving unit, a buffer circuit and diodes, wherein the number of the driving unit is consistent with that of the IGBTs in the test sample valve;
one end of each buffer circuit is connected with the drain electrode of one IGBT, the other end of each buffer circuit is connected with the source electrode of the IGBT, the grid electrode of the IGBT is connected with one driving unit, and the IGBT is also connected with one diode in an anti-parallel mode to form a first IGBT module.
The number of the first IGBT modules is multiple, every two first IGBT modules are connected in series to form a bridge arm, and every two bridge arms form a half-bridge circuit; each bridge arm is respectively connected with one driving series control unit.
The number of the IGBTs in the auxiliary valve is consistent with that of the IGBTs in the test sample valve, and the auxiliary valve further comprises a driving unit, a buffer circuit and diodes, wherein the driving unit, the buffer circuit and the diodes are consistent with that of the IGBTs in the auxiliary valve;
one end of each buffer circuit is connected with the drain electrode of one IGBT, the other end of each buffer circuit is connected with the source electrode of the IGBT, the grid electrode of the IGBT is connected with one driving unit, and the IGBT is also connected with one diode in an anti-parallel mode to form a second IGBT module.
The number of the second IGBT modules is multiple, every two second IGBT modules are connected in series to form a bridge arm, every two bridge arms form a half-bridge circuit, and each bridge arm is connected with one driving series control unit.
The buffer circuit includes: the voltage-sharing resistor Rs, the voltage-sharing resistor R, the voltage-sharing capacitor C and the diode D;
after being connected in parallel with the diode D, the voltage-sharing resistor R is connected in series with the voltage-sharing capacitor C and then connected in parallel with the voltage-sharing resistor Rs. The reactor L is connected between the auxiliary valve and the half-bridge circuit of the sample valve.
The direct-current power supply comprises a transformer, a rectifying unit, a direct-current chopping unit and a power supply control protection system.
On the other hand, the invention provides a control method of an IGBT series connection voltage-sharing module, which comprises the following steps:
controlling the charging switch S to be closed, and simultaneously charging the capacitors in the sample valve and the auxiliary valve by the direct-current power supply;
when the capacitor voltage reaches a preset voltage, controlling the charging switch S to be switched off;
the sample valve and the auxiliary valve exchange energy through a reactor L; and the driving series control unit acquires the voltage of the IGBT.
Compared with the closest prior art, the technical scheme provided by the invention has the following beneficial effects:
the IGBT series voltage-sharing module control device provided by the invention comprises a direct-current power supply, a test sample valve, an auxiliary valve, a reactor L, a charging switch S and a driving series control unit; the sample valve and the auxiliary valve both comprise an IGBT and a capacitor; the test sample valve and the auxiliary valve are connected with the charging switch S in series, and the direct-current power supply is connected to two ends of the auxiliary valve in parallel; the IGBTs in the test sample valve and the auxiliary valve are respectively connected with the driving series control unit; the test valve and the auxiliary valve are connected through the reactor L, so that the most basic voltage-sharing characteristic can be tested, and the energy exchange between the auxiliary valve and the test valve can be realized through the charging and discharging of the first capacitor C1 and the second capacitor C2, so that the voltage-sharing characteristic of the high-power IGBT can be tested;
the technical scheme provided by the invention adopts a mode of combining the active control circuit with the buffer circuit, is beneficial to realizing the series voltage sharing of the IGBTs, and has the potential capability of expanding to the series voltage sharing of a plurality of IGBTs;
the technical scheme provided by the invention can realize the detection of the series voltage-sharing characteristic of the SiC-IGBT under the conditions of different voltage stress, current stress and thermal stress.
Drawings
FIG. 1 is a topological diagram of a control device of an IGBT series voltage-sharing module in the embodiment of the invention;
fig. 2 is a structural view of a first IGBT module/a second IGBT module in the embodiment of the invention;
FIG. 3 is a schematic diagram of voltage variation during the turn-on process of the IGBT in the embodiment of the invention;
fig. 4 is a schematic diagram of voltage variation in the turn-off process of the IGBT according to the embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Example 1
the sample valve and the auxiliary valve are connected with the charging switch S in series, and the direct-current power supply is connected to two ends of the auxiliary valve in parallel;
the IGBTs in the test sample valve and the auxiliary valve are respectively connected with the driving series control unit;
the sample valve and the auxiliary valve are connected through a reactor L.
The number of the IGBTs in the test sample valve is multiple, and the test sample valve further comprises a driving unit, a buffer circuit and diodes, wherein the number of the driving unit is consistent with that of the IGBTs in the test sample valve;
one end of each buffer circuit is connected with the drain electrode of one IGBT, the other end of each buffer circuit is connected with the source electrode of the IGBT, the grid electrode of the IGBT is connected with one driving unit, and the IGBT is also connected with one diode in an anti-parallel mode to form a first IGBT module.
The number of the first IGBT modules is multiple, every two first IGBT modules are connected in series to form a bridge arm, and every two bridge arms form a half-bridge circuit; each bridge arm is respectively connected with one driving series control unit.
The number of the IGBTs in the auxiliary valve is consistent with that of the IGBTs in the test sample valve, and the auxiliary valve further comprises a driving unit, a buffer circuit and diodes, wherein the driving unit, the buffer circuit and the diodes are consistent with that of the IGBTs in the auxiliary valve;
one end of each buffer circuit is connected with the drain electrode of one IGBT, the other end of each buffer circuit is connected with the source electrode of the IGBT, the grid electrode of the IGBT is connected with one driving unit, and the IGBT is also connected with one diode in an anti-parallel mode to form a second IGBT module.
The number of the second IGBT modules is multiple, every two second IGBT modules are connected in series to form a bridge arm, every two bridge arms form a half-bridge circuit, and each bridge arm is connected with one driving series control unit.
The half-bridge circuit in the auxiliary valve is called a first half-bridge circuit, and the first half-bridge circuit comprises a first upper bridge arm and a first lower bridge arm;
the half-bridge circuit in the video valve is referred to as a second half-bridge circuit, which includes a second upper leg and a second lower leg.
A first driving series control unit in the auxiliary valve is connected with a driving unit of a first upper bridge arm, and a second driving series control unit in the auxiliary valve is connected with a driving unit of a first lower bridge arm;
and a third driving series control unit in the test valve is connected with the driving unit of the second upper bridge arm, and a fourth driving series control unit in the test valve is connected with the driving unit of the second lower bridge arm.
One end of the first upper bridge arm is connected with a common point C, the other end of the first upper bridge arm is connected with one end of the first lower bridge arm through a common point A, and the other end of the first lower bridge arm is connected with a common point E;
one end of the second upper bridge arm is connected with the common point D, the other end of the second upper bridge arm is connected with the second lower bridge arm through the common point B, and the other end of the second lower bridge arm is connected with the common point F;
one end of the reactor L is connected with the common point A, and the other end of the reactor L is connected with the common point B;
one end of the charging switch S is connected with the common point C, and the other end of the charging switch S is connected with the common point D;
common point E connects common point F.
As shown in fig. 2, the IGBT module includes a driving unit, a snubber circuit, an IGBT, and a diode;
one end of the buffer circuit is connected with the drain electrode of the IGBT, the other end of the buffer circuit is connected with the source electrode of the IGBT, and the driving unit is connected with the grid electrode of the IGBT; the diode is connected in anti-parallel with the IGBT.
The buffer circuit comprises a static voltage-sharing circuit and a dynamic voltage-sharing circuit;
the static voltage-sharing circuit comprises a voltage-sharing resistor Rs, can realize the static voltage sharing of the SiC-IGBT and provides a capacitor discharge loop;
the dynamic voltage-sharing circuit comprises a voltage-sharing resistor R, a voltage-sharing capacitor C and a diode D; after being connected in parallel, the voltage-sharing resistor R and the diode D are connected in series with the voltage-sharing capacitor C, and the dynamic voltage-sharing circuit can slow down the change rate of the voltage at the device end, so that the dynamic voltage difference between the devices is reduced, and the purpose of auxiliary voltage sharing is achieved.
The IGBT aimed at by the embodiment of the invention is the SiC-IGBT, and the SiC-IGBT has faster switching frequency and is more difficult to realize series voltage sharing compared with the Si-IGBT. Therefore, in the embodiment of the invention, the first driving series control unit, the second driving series control unit, the third driving series control unit and the fourth driving series control unit all adopt an active control mode, IThe GBT module includes a buffer circuit, and thus, in the embodiment of the present invention, the active control and the buffer circuit are combined to drive the series control unit (i.e., the first driving series control unit, the second driving series control unit, the third driving series control unit, and the fourth driving series control unit) to apply the voltage V between the source and the drain of the IGBTCEGiving a particular reference value VrefAs shown in fig. 3, in the IGBT turning-on process, Vref is a relatively slow slope first in the first stage, all the series SiC-IGBTs follow the reference value and then enter the second stage, becoming a steeply descending slope, and finally the third stage is kept on. The turn-off process of the IGBT is similar to the turn-on process, as shown in fig. 4, Vref gives a lower plateau, then becomes a steep slope, and finally the turn-off is completed. The special design is extremely beneficial to SiC-IGBT dynamic voltage sharing and has the potential capability of expanding to the voltage sharing of a plurality of SiC-IGBTs in series.
The direct-current power supply comprises a transformer, a rectifying unit, a direct-current chopping unit and a power supply control protection system. The direct current power supply is a charging power supply in the charging process and is an energy supplementing power supply in the operation process.
Example 2
The embodiment 2 of the invention provides a control method of an IGBT series connection voltage-sharing module, which comprises the following steps:
controlling the charging switch S to be closed, simultaneously charging the capacitors in the test sample valve and the auxiliary valve by the direct current power supply, and enabling the auxiliary valve and the test sample valve to be in a locking state in the charging process of the first capacitor C1 and the second capacitor C2;
the first driving series control unit and the second driving series control unit can take energy from the first capacitor C1, and the third driving series control unit and the fourth driving series control unit can take energy from the second capacitor C2;
when the voltages of the first capacitor C1 and the second capacitor C2 reach a preset voltage, the charging switch S is controlled to be switched off;
the auxiliary valve and the sample valve are unlocked simultaneously, the sample valve and the auxiliary valve exchange energy through the reactor L, the series control unit is driven to obtain the voltage of the IGBT, the voltage values of the SiC-IGBTs are compared before the sample valve is unlocked, the static voltage-sharing characteristic of the sample valve is evaluated, the voltage waveforms of the SiC-IGBT are compared when the energy exchange is carried out between the auxiliary valve and the sample valve, and the dynamic voltage-sharing characteristic of the sample valve is evaluated.
The on/off of the charging switch S can be controlled by a dc power supply or manually.
Finally, it should be noted that: the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person of ordinary skill in the art can make modifications or equivalents to the specific embodiments of the present invention with reference to the above embodiments, and such modifications or equivalents without departing from the spirit and scope of the present invention are within the scope of the claims of the present invention as set forth in the claims.
Claims (9)
1. A control device of an IGBT series voltage-sharing module is characterized by comprising a direct-current power supply, a test sample valve, an auxiliary valve, a reactor L, a charging switch S and a driving series control unit; the sample valve and the auxiliary valve both comprise an IGBT and a capacitor;
the test sample valve and the auxiliary valve are connected with the charging switch S in series, and the direct-current power supply is connected to two ends of the auxiliary valve in parallel;
the IGBTs in the test sample valve and the auxiliary valve are respectively connected with the driving series control unit;
the test sample valve and the auxiliary valve are connected through a reactor L.
2. The IGBT series connection voltage-sharing module control device according to claim 1, wherein a plurality of IGBTs are arranged in the sample valve, and the sample valve further comprises a driving unit, a buffer circuit and diodes, wherein the number of the driving unit, the buffer circuit and the diodes is consistent with that of the IGBTs in the sample valve;
one end of each buffer circuit is connected with the drain electrode of one IGBT, the other end of each buffer circuit is connected with the source electrode of the IGBT, the grid electrode of the IGBT is connected with one driving unit, and the IGBT is also connected with one diode in an anti-parallel mode to form a first IGBT module.
3. The IGBT series voltage-sharing module control device according to claim 2, wherein the number of the first IGBT modules is multiple, each two first IGBT modules are connected in series to form a bridge arm, and each two bridge arms form a half-bridge circuit; each bridge arm is respectively connected with one driving series control unit.
4. The IGBT series voltage equalizing module control device according to claim 2, wherein the number of IGBTs in the auxiliary valve is the same as the number of IGBTs in the test sample valve, and the auxiliary valve further comprises a driving unit, a buffer circuit and a diode which are the same as the number of IGBTs in the auxiliary valve;
one end of each buffer circuit is connected with the drain electrode of one IGBT, the other end of each buffer circuit is connected with the source electrode of the IGBT, the grid electrode of the IGBT is connected with one driving unit, and the IGBT is also connected with one diode in an anti-parallel mode to form a second IGBT module.
5. The IGBT series voltage-sharing module control device according to claim 4, wherein the number of the second IGBT modules is multiple, each two second IGBT modules are connected in series to form a bridge arm, each two bridge arms form a half-bridge circuit, and each bridge arm is respectively connected with one driving series control unit.
6. The IGBT series voltage equalizing module control device according to claim 5, wherein said reactor L is connected between the auxiliary valve and the half-bridge circuit of the sample valve.
7. The IGBT series connection voltage-sharing module control device according to claim 4, wherein the buffer circuit comprises: the voltage-sharing resistor Rs, the voltage-sharing resistor R, the voltage-sharing capacitor C and the diode D;
after being connected in parallel with the diode D, the voltage-sharing resistor R is connected in series with the voltage-sharing capacitor C and then connected in parallel with the voltage-sharing resistor Rs.
8. The IGBT series voltage-sharing module control device according to claim 1, wherein the direct current power supply comprises a transformer, a rectifying unit, a direct current chopping unit and a power supply control protection system.
9. A control method for an IGBT series voltage-sharing module is characterized by comprising the following steps:
controlling the charging switch S to be closed, and simultaneously charging the capacitors in the sample valve and the auxiliary valve by the direct-current power supply;
when the capacitor voltage reaches a preset voltage, controlling the charging switch S to be switched off;
the sample valve and the auxiliary valve exchange energy through a reactor L; and the driving series control unit acquires the voltage of the IGBT.
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| CN201911133605.7A CN110888033A (en) | 2019-11-19 | 2019-11-19 | IGBT series connection voltage-sharing module control device and control method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112098796A (en) * | 2020-08-14 | 2020-12-18 | 中国南方电网有限责任公司超高压输电公司 | Flexible direct current converter valve half-bridge submodule thyristor breakdown testing device and method |
| CN112491406A (en) * | 2020-11-26 | 2021-03-12 | 核工业西南物理研究院 | High-voltage solid-state modulator with voltage regulation capability |
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2019
- 2019-11-19 CN CN201911133605.7A patent/CN110888033A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112098796A (en) * | 2020-08-14 | 2020-12-18 | 中国南方电网有限责任公司超高压输电公司 | Flexible direct current converter valve half-bridge submodule thyristor breakdown testing device and method |
| CN112491406A (en) * | 2020-11-26 | 2021-03-12 | 核工业西南物理研究院 | High-voltage solid-state modulator with voltage regulation capability |
| CN112491406B (en) * | 2020-11-26 | 2023-07-25 | 核工业西南物理研究院 | High-voltage solid-state modulator with voltage regulation capability |
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