CN116667641A - Low-cost high-driving-capability negative bias half-bridge pre-driving circuit and control method - Google Patents
Low-cost high-driving-capability negative bias half-bridge pre-driving circuit and control method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a low-cost high-driving-capability negative bias half-bridge pre-driving circuit and a control method, wherein the negative bias half-bridge pre-driving circuit is provided with an IR2110 driver U1, the on-off of a negative bias charging loop GND, Q6, ua, C2, Q3 and Q3 of the negative bias half-bridge pre-driving circuit is determined by a switching tube Q3 in the on period of a switching tube Q6, so that the negative bias charging current is greatly increased, the current discharging capability when an upper bridge arm is turned off is increased, the quick turn-off and the negative bias clamping in the occasion with high-current driving capability requirements such as multi-tube parallel connection of the switching tube are realized, the switching loss is reduced, the reliability of a switching tube switch is improved, an independent isolation power supply is not required to be added for an upper bridge, the product cost is reduced, and the miniaturized design of a product is facilitated.
Description
Technical Field
The invention relates to the technical field of control of a negative bias half-bridge pre-driving circuit, in particular to a low-cost high-driving-capability negative bias half-bridge pre-driving circuit and a control method.
Background
The negative bias voltage driving technology has great advantages in the aspects of improving the switching speed of switching tubes such as SIC MOS, IGBT, si MOS and the like, inhibiting the crosstalk of a high-voltage bridge arm and the like, can reduce the switching loss of the switching tubes, and improves the reliability of a bridge circuit in a high-voltage field switch. Based on a bootstrap pre-driving chip based on IR2110 and the like, two types of half-bridge pre-driving circuits with negative bias are mainly arranged.
The upper bridge arm and the lower bridge arm respectively use a half-bridge pre-driving circuit of an isolated negative power supply. As shown in the first drawing, U1 is an isolated power supply, the negative output electrode is connected with a half bridge Ua, then negative bias voltage with positive Ua is output, when HO output is low level, Q3 is conducted, ua-H-driver level is negative bias voltage, and rapid turn-off and negative bias voltage clamping of a switching tube are realized.
The upper bridge arm uses a negative bias based on a voltage-stabilizing diode, and the lower bridge arm uses a half-bridge pre-driving circuit of an isolated negative power supply. As shown in the second figure, this approach is to use a zener diode to achieve a negative bias with respect to Ua. When the HO output is high level and the Q1 is conducted, the high voltage charges the capacitor C2 through the loop of Q1, C2// DZ1, R1 and 3V, so that stable negative bias of VS relative to Ua (the negative voltage value is the voltage stabilizing value of the diode) is realized. When the HO output is low level, Q3 is on, ua-H-driver level is negative bias of Ua, and rapid turn-off and negative bias clamping of the switching tube are realized, so that an improved technology is needed to solve the problem in the prior art.
Disclosure of Invention
The present invention is directed to a low-cost and high-driving-capability negative bias half-bridge pre-driving circuit and a control method thereof, so as to solve the problems set forth in the above-mentioned background art.
In order to achieve the above purpose, the present invention provides the following technical solutions: the low-cost high-driving-capability negative bias half-bridge pre-driving circuit comprises a negative bias half-bridge pre-driving circuit, wherein an IR2110 driver U1 is arranged on the negative bias half-bridge pre-driving circuit, NC and VDD on the IR2110 driver are connected with 18V voltage, HO ends on the IR2110 driver are connected with a triode Q2 and a triode Q4 in a matched mode, a base electrode of the triode Q2 is connected with a base electrode of the triode Q4, an emitter of the triode Q2 is connected with an emitter of the triode Q4, an emitter of the triode Q2 is simultaneously connected with a resistor R3, one end of the resistor R3 is connected with a field effect transistor Q1, a source electrode of the field effect transistor Q1 is connected with a drain electrode of the field effect transistor Q6, a capacitor C2 is arranged between a node between the field effect transistor Q1 and the field effect transistor Q6 and a VS end on the IR2110 driver U1, and a capacitor C1 is arranged between a node between the field effect transistor Q1 and a VB connecting end on the IR2110 driver U1;
the LO end on the IR2110 driver U1 is connected with a triode Q5 and a triode Q7 in a matching way, the emitting electrode of the triode Q5 and the emitting electrode of the triode Q7 are connected with a resistor R4 at the same time, the other end of the resistor R4 is connected with the grid end of a field effect tube Q6, the collector of the triode Q5 is connected with 18V voltage, the collector of the triode Q7 is connected with-3V voltage, a resistor R2 and a diode DD2 are arranged at a node between the resistor R4 and the triode Q5 and between the resistor R4 and the triode Q7, one connecting end of the resistor R2 and the diode DD2 is connected with the grid of the field effect tube Q3, the drain electrode of the field effect tube Q3 is connected with a node between the VS connecting end on the IR2110 driver U1, the source electrode of the field effect tube Q3 is connected with the grid in a matching way, the COM connecting end on the IR2110 driver U1 is connected with-3V voltage, and the VSS connecting end on the IR2110 driver U1 is grounded.
Preferably, Q2 is an NPN triode, Q4 is a PNP triode, the NPN triode Q2 and the PNP triode Q4 form a push-pull circuit, and the HO connection terminal on the IR2110 driver U1 can only turn on one NPN triode Q2 and PNP triode Q4 at any voltage from-3V to 18V.
Preferably, the field effect transistor Q1 and the field effect transistor Q6 form a half-bridge power circuit, and the field effect transistor Q1 and the field effect transistor Q6 cannot be turned on at the same time.
Preferably, HO is set to 0, Q4 is turned on, Q1 is turned off, and LO is set to 1, Q7 is turned on before the negative bias half-bridge pre-driver circuit works normally.
Preferably, in the normal operation of the negative bias half-bridge pre-driving circuit, when the working flow of Q1 is opened to set LO to 0, Q7 is conducted, and the Ua-L-driver voltage is-3V.
Preferably, when HO is set to 0 during the process of opening the field effect transistor Q6, Q4 is conducted, the voltage of Ua-H-driver is Ua-3V, and the voltages at two ends of the Cgs capacitor of Q1 are respectively the voltages Ua and Ua+18V.
Compared with the prior art, the invention has the beneficial effects that:
(1) The push-pull circuit formed by the NPN triode Q2 and the PNP triode Q4 can only be turned on, because the two transistors have consistent Vbe states, the situation that the Vbe is larger than 0.7V and smaller than-0.7V is impossible, the risk of direct short circuit between the NPN triode Q2 and the PNP triode Q4 is avoided, meanwhile, the current amplification characteristic of the triode is realized, the power amplification is realized, and the condition is provided for the rapid switching of the switching tube;
(2) The negative bias charging current is greatly increased, so that the current discharging capability of the upper bridge arm is increased when the upper bridge arm is turned off, the quick turn-off and the negative bias clamping of occasions with high current driving capability requirements such as multi-tube parallel connection of the switching tube are realized, the switching loss is reduced, the reliability of the switching tube switch is improved, an independent isolation power supply is not required to be added for the upper bridge, the product cost is reduced, and the miniaturized design of the product is conveniently realized.
Drawings
FIG. 1 is a schematic diagram of a half-bridge pre-drive circuit of an isolated negative power supply of the present invention;
FIG. 2 is a schematic diagram of a half-bridge pre-driving circuit in which an upper bridge arm uses a voltage stabilizing diode-based negative bias voltage and a lower bridge arm uses an isolated negative power supply;
FIG. 3 is a schematic diagram of a half-bridge pre-drive circuit with negative bias voltage according to the present invention;
FIG. 4 is a schematic diagram of a negative bias half-bridge pre-drive circuit according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-4, the present invention provides a technical solution: the utility model provides a low-cost high-driving capability's negative bias half-bridge pre-drive circuit, includes the negative bias half-bridge pre-drive circuit, be equipped with IR2110 driver U1 on the negative bias half-bridge pre-drive circuit, NC, VDD terminal on the IR2110 driver is inserted 18V voltage, HO terminal on the IR2110 driver cooperation is connected triode Q2, triode Q4, be connected between triode Q2 and triode Q4's the base, triode Q2's projecting pole is connected with triode Q4's projecting pole, triode Q2's projecting pole and triode Q4's projecting pole are connected with resistance R3 simultaneously, resistance R3's one end inserts field effect transistor Q1, field effect transistor Q1's source access field effect transistor Q6's drain electrode, be equipped with electric capacity C2 between the node between field effect transistor Q1 and field effect transistor Q6 and the VS terminal on the IR2110 driver U1, be equipped with electric capacity C1 between the node between field effect transistor Q1 and the VB terminal on the IR2110 driver U1.
The LO end on the IR2110 driver U1 is connected with a triode Q5 and a triode Q7 in a matching way, the emitting electrode of the triode Q5 and the emitting electrode of the triode Q7 are connected with a resistor R4 at the same time, the other end of the resistor R4 is connected with the grid end of a field effect tube Q6, the collector of the triode Q5 is connected with 18V voltage, the collector of the triode Q7 is connected with-3V voltage, a resistor R2 and a diode DD2 are arranged at a node between the resistor R4 and the triode Q5 and between the resistor R4 and the triode Q7, one connecting end of the resistor R2 and the diode DD2 is connected with the grid of the field effect tube Q3, the drain electrode of the field effect tube Q3 is connected with a node between the VS connecting end on the IR2110 driver U1, the source electrode of the field effect tube Q3 is connected with the grid in a matching way, the COM connecting end on the IR2110 driver U1 is connected with-3V voltage, and the VSS connecting end on the IR2110 driver U1 is grounded.
Q2 is NPN triode, Q4 is PNP triode, NPN triode Q2 and PNP triode Q4 constitute push-pull circuit, HO link on IR2110 driver U1 is under-3V to 18V any voltage, NPN triode Q2 and PNP triode Q4 can open only one.
Q2 is NPN triode, Q4 is PNP triode, it is the flow control device, when Vbe is greater than the open voltage, namely HO is 0.7V higher than Ua-H-driver (Ic is BE flow current), beta Ib is greater than Ic (Ic is CE flow current, beta is triode amplification factor), then consider that the triode is fully conducted, Q4 is PNP triode, when Vbe is less than the open voltage, namely HO is 0.7V lower than Ua-H-driver, vce is greater than 0, ib is greater than 0 (Ic is EBflow current), beta Ib is greater than Ic (Ic is EC flow current, beta is triode amplification factor is generally 50 to 100 times), then consider that the triode is fully conducted, work in the switch state, based on triode operation principle 2110, NPN triode Q2 and PNP triode Q4 constitute a PNP triode push-pull state under any voltage of-3V to 18V, thereby realizing that PNP triode Q2 and PNP triode Q4 can BE in a push-pull state, thereby the two-pull state is not consistent with each other, and the fast-state of the PNP triode Q2 is not provided, and the fast-state Q7 is not consistent with the power transistor Q7 is realized, and the fast-state Q is not provided, the fast-state Q is not is provided, and the transistor Q is in the state is in the condition is in the state.
SIC MOS, IGBT, si MOS and the like on the negative bias half-bridge pre-driving circuit are voltage-controlled devices, an N-channel switching device is taken as an example, when Vgs is larger than the starting voltage, the switching tube can be considered to be completely turned on, vgs is smaller than the starting voltage, the switching device is considered to be turned off, however, parasitic capacitance Cgs exists between the switching devices GS, the turning on and the turning off of the switching devices can be considered to be a dynamic process of charging and discharging of the Cg capacitance, the charging and discharging time of the Cgs capacitance depends on the magnitude of charging and discharging current, and the charging and discharging current amplification is realized through the push-pull circuit, so that the switching time of the switching device is shortened.
The field effect tube Q1 and the field effect tube Q6 form a half-bridge power circuit, the field effect tube Q1 and the field effect tube Q6 cannot be simultaneously turned on, otherwise, the two tubes cannot be simultaneously turned on because the time sequence of the driving signals is controlled to ensure that one tube is turned off and the other tube is turned on after the other tube is turned off, and normally, a delay time is set between the time when one tube driving signal is turned low and the time when the other tube driving signal is turned high. This time is commonly referred to as dead time.
Before the circuit works normally, HO is set to 0, Q4 is conducted, Q1 is turned off, then LO is set to 1, Q7 is conducted, because the charging loop impedance R4 of Q6 is far greater than R2, Q6 and Q3 are conducted in sequence, the shared lower bridge arm isolation power supply charges through loops GND, Q6, ua, C2, Q3 and C2, when C2 is full, VS is-3V, meanwhile, 18V power supply charges through loops 18V, DD1, C1, Q6 and GND as C1, when C1 is full, after VB is 18V, LO is set to 0, Q3, Q6 and Q7 are turned off in sequence, loops GND, Q6, ua, C2, Q3 and C3 are disconnected, and stable negative bias of VS relative to Ua is realized.
In normal operation, when LO is set to 0, Q7 is firstly conducted, ua-L-driver voltage is-3V, cgs capacitors of Q6 and Q3 are rapidly discharged at the moment, because the discharge loop impedance of Cgs of Q3 is far lower than that of Q4, Q3 is turned off before Q4 is turned off until G of Q6 is extremely-3V, Q6 is completely turned off, thereby realizing rapid turn-off and negative bias clamping of Q6, simultaneously loops 18V, DD, C1, Q6 and GND are also turned off, realizing voltage 18V of VB relative to Ua, wherein VB and VS are respectively high and low levels of an upper bridge arm switching tube, after dead time delay, HO is set to 1, Q2 is conducted, C1 capacitor is charged, C1 also loses a certain charge, and Q3 voltage reaches 18V and is completely turned on.
In normal operation, when HO is set to 0, Q4 is conducted, ua-H-driver voltage is Ua-3V, voltages at two ends of a Cgs capacitor of Q1 are respectively Ua and Ua+18V, the Cgs capacitor is rapidly discharged at the moment, a discharging loop is Cgs+, R3, Q4, C2 and Cgs-, until G of Q1 is minus 3V, and accordingly rapid turn-off and negative bias clamping of Q1 are achieved, at the moment, C2 capacitor also loses a certain charge due to discharging, LO is set to 1 after delay of dead time, Q5 is conducted to charge the Cgs capacitor of Q6 and Q3, because R2 resistance value capacitor is far larger than R4, Q3 charging current is far smaller than Q6, Q6 is firstly turned on, then Q3 is turned on, and C1 and C2 supplement lost charges are consistent in the upper section 4, and stability of positive bias and negative bias is achieved.
In addition, as can be seen from the above flow, by setting R2, DD2, and R4 to configure the charge-discharge loop impedance of Q3 and Q6, Q6 is turned on after Q3 is realized, and Q6 is turned off before Q6 is turned off, so that the dead time configuration of Q1 and Q6 is not affected.
Examples
The IR2110 peak driving capability is 2A, D44H11 and D45H11 are selected to form a push-pull structure to increase the driving capability, the driving capability can reach 40A, which is far larger than the driving capability of a general special driving chip, the Q6 discharging current peak capability of controlling a negative pressure charging loop switch can be 100A, and the required peak value (18V+3V)/(5R// 5R//5R// 5R) is about 17A, so the invention can completely meet the driving requirement of high-power occasions such as multi-pipe parallel connection.
R6 is the current limiting of a driving loop of Q6, R6 is far larger than the driving resistor (R70// R8// R9// R10) of a driving loop of a lower bridge arm, Q6 is guaranteed to be turned on after a half-bridge circuit lower bridge power device (Q9, Q10, Q11, Q12) is turned on, DD2 is guaranteed to be the low impedance of a negative-pressure current discharging loop of Q6, and therefore Q6 is guaranteed to be turned off before the half-bridge circuit lower bridge power device (Q9, Q10, Q11, Q12) is turned off, and therefore the negative-pressure charging loop is guaranteed not to influence the dead time control of an upper bridge arm and a lower bridge arm of a main power loop.
C5 (22 uF)/C7 (22 uF) is used as a negative voltage (-3V) charge storage device, C4 is used as a high-frequency interference resistant filter, so that the stability of negative voltage C1 (22 uF)/C2 (22 uF) is ensured as a positive voltage (18V) charge storage device, and C3 is used as a high-frequency interference resistant filter, so that the stability of positive voltage is ensured.
The circuit greatly increases the negative bias charging current, thereby increasing the current discharging capability when the upper bridge arm is turned off, realizing the quick turn-off and negative bias clamping in occasions with high current driving capability requirements such as multi-tube parallel connection of the switching tube, reducing the switching loss, improving the reliability of the switching tube switch, avoiding adding an independent isolation power supply for the upper bridge, reducing the product cost and being convenient for realizing the miniaturized design of the product.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A low-cost high-driving-capability negative bias half-bridge pre-driving circuit comprises a negative bias half-bridge pre-driving circuit and is characterized in that: an IR2110 driver U1 is arranged on the negative bias half-bridge pre-driving circuit, NC and VDD on the IR2110 driver are connected with 18V voltage, HO ends on the IR2110 driver are connected with a triode Q2 and a triode Q4 in a matched mode, the base electrode of the triode Q2 and the base electrode of the triode Q4 are connected, the emitter electrode of the triode Q2 and the emitter electrode of the triode Q4 are connected with a resistor R3 at the same time, one end of the resistor R3 is connected with a field effect transistor Q1, the source electrode of the field effect transistor Q1 is connected with the drain electrode of the field effect transistor Q6, the source electrode of the field effect transistor Q6 is grounded, a capacitor C2 is arranged between a node between the field effect transistor Q1 and the field effect transistor Q6 and the VS end on the IR2110 driver U1, and a capacitor C1 is arranged between the node between the field effect transistor Q1 and the field effect transistor Q6 and the VB connecting end on the IR2110 driver U1;
the LO end on the IR2110 driver U1 is connected with a triode Q5 and a triode Q7 in a matching way, the emitting electrode of the triode Q5 and the emitting electrode of the triode Q7 are connected with a resistor R4 at the same time, the other end of the resistor R4 is connected with the grid end of a field effect tube Q6, the collector of the triode Q5 is connected with 18V voltage, the collector of the triode Q7 is connected with-3V voltage, a resistor R2 and a diode DD2 are arranged at a node between the resistor R4 and the triode Q5 and between the resistor R4 and the triode Q7, one connecting end of the resistor R2 and the diode DD2 is connected with the grid of the field effect tube Q3, the drain electrode of the field effect tube Q3 is connected with a node between the VS connecting end on the IR2110 driver U1, the source electrode of the field effect tube Q3 is connected with the grid in a matching way, the COM connecting end on the IR2110 driver U1 is connected with-3V voltage, and the VSS connecting end on the IR2110 driver U1 is grounded.
2. The low cost high drive capability negative bias half-bridge pre-drive circuit of claim 1, wherein: q2 is NPN triode, Q4 is PNP triode, NPN triode Q2 and PNP triode Q4 constitute push-pull circuit, HO link on IR2110 driver U1 is under-3V to 18V any voltage, NPN triode Q2 and PNP triode Q4 can open only one.
3. The low cost high drive capability negative bias half-bridge pre-drive circuit of claim 1, wherein: the field effect transistor Q1 and the field effect transistor Q6 form a half-bridge power circuit, and the field effect transistor Q1 and the field effect transistor Q6 cannot be simultaneously turned on.
4. The low cost high drive capability negative bias half-bridge pre-drive circuit of claim 1, wherein: and before the normal operation of the negative bias half-bridge pre-driving circuit, HO is set to 0, Q4 is conducted, Q1 is turned off, and LO is set to 1, and Q7 is conducted.
5. The low cost high drive capability negative bias half-bridge pre-drive circuit of claim 1, wherein: in the normal operation of the negative bias half-bridge pre-driving circuit, when the working flow of Q1 is opened to set LO to 0, Q7 is conducted, and the Ua-L-driver voltage is-3V.
6. The low cost high drive capability negative bias half-bridge pre-drive circuit of claim 1, wherein: when HO is set to 0 during the process of opening the field effect transistor Q6, Q4 is conducted, the voltage of Ua-H-driver is Ua-3V, and the voltages at two ends of the Cgs capacitor of Q1 are respectively the voltages Ua and Ua+18V.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310692422.9A CN116667641A (en) | 2023-06-12 | 2023-06-12 | Low-cost high-driving-capability negative bias half-bridge pre-driving circuit and control method |
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| CN202310692422.9A CN116667641A (en) | 2023-06-12 | 2023-06-12 | Low-cost high-driving-capability negative bias half-bridge pre-driving circuit and control method |
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| CN116667641A true CN116667641A (en) | 2023-08-29 |
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| CN202310692422.9A Pending CN116667641A (en) | 2023-06-12 | 2023-06-12 | Low-cost high-driving-capability negative bias half-bridge pre-driving circuit and control method |
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