CN116666523A - LED single-sided light emitting implementation method - Google Patents
LED single-sided light emitting implementation method Download PDFInfo
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- CN116666523A CN116666523A CN202310796020.3A CN202310796020A CN116666523A CN 116666523 A CN116666523 A CN 116666523A CN 202310796020 A CN202310796020 A CN 202310796020A CN 116666523 A CN116666523 A CN 116666523A
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- led
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- target layer
- light
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 9
- 238000001459 lithography Methods 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 238000009501 film coating Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 39
- 239000003292 glue Substances 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- 238000001723 curing Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention discloses a method for realizing single-sided light emission of an LED, which comprises the steps of providing an LED wafer, attaching a shading material on the surface of a non-light-emitting surface of the LED wafer to form a target layer, patterning the target layer by using a photoetching process after forming the target layer, and exposing an electrode to be externally arranged by a developing process to form the shading layer; or directly curing the target layer after forming the target layer, and then directly performing gas plasma bombardment to expose the electrode to the outside to form the shading layer. According to the method for realizing single-sided light emission of the LED, the light leakage of the non-light-emitting surface is directly shielded in an absorption or total reflection mode on the completed LED chip structure, so that the single-sided light emission of the LED is realized. The LED light source is suitable for the existing forward, reverse and vertical structures of LEDs, avoids complex process flows, is high in operability and quick in mass production, and realizes single-sided light emission of the LEDs at extremely low cost.
Description
Technical Field
The invention belongs to the technical field of LED chips, and particularly relates to a method for realizing single-sided light emission of an LED.
Background
The LED semiconductor chip is characterized in that the active area emits light in a total space angle due to structural reasons, in order to improve the light emitting efficiency of the light emitting surface in the prior art, the LED semiconductor chip is used as a light reflecting layer by vapor deposition of a Bragg distributed reflector or metal in the production process so as to improve the light emitting efficiency of the light emitting surface of the chip, but the light reflecting layer cannot achieve total reflection of total angle light due to the vapor deposition characteristics of the film layer and the limitation of the chip structure. On the basis, although the vapor deposition Bragg distributed reflector or the metal serving as the reflecting layer can improve the light-emitting efficiency, the single-sided light emitting of the LED chip cannot be realized, and the single-sided light emitting requirement of the LED in a specific scene cannot be met; meanwhile, the metal reflecting layer can increase the risk of electric leakage of the chip in the subsequent transfer process, so that the process yield is reduced, the failure proportion is increased, the cost is greatly increased, and the like. Therefore, it is needed to provide a light shielding layer with low cost, simplicity and rapidness to meet the single-sided light emitting requirement of the LED.
Disclosure of Invention
The invention aims to provide a method for realizing single-sided light emission of an LED, which solves the problem of light leakage of a non-light-emitting surface of the existing LED.
The technical scheme adopted by the invention is as follows: providing a wafer including, but not limited to, gaN and GaAs-based LED (without dicing scribe-and-break) wafers that complete the LED full structure process; forming a target layer on the surface of the wafer by spin coating, spray coating, film coating and the like, wherein the target layer comprises, but is not limited to, photoresist thermosetting photoresist, photo-setting photoresist, instant adhesive, wet adhesive, printing ink and the like with light absorption and light reflection properties; patterning the target layer by using a photoetching process or directly solidifying the target layer, and then carrying out a developing process or directly carrying out gas plasma bombardment on the target layer to expose the covered electrode; and performing post-treatment to form a stable shading layer.
The beneficial effects of the invention are as follows: according to the method for realizing single-sided light emission of the LED, the light leakage of the non-light-emitting surface is directly shielded in an absorption or total reflection mode on the completed LED chip structure, so that the single-sided light emission of the LED is realized. The LED light source is suitable for the existing forward, reverse and vertical structures of LEDs, avoids complex process flows, is high in operability and quick in mass production, and realizes single-sided light emission of the LEDs at extremely low cost.
Drawings
FIG. 1 is a schematic cross-sectional view of a GaN LED (without dicing scribe-and-break) wafer of the LED flip-chip full structure process of the present invention;
FIG. 2 is a schematic diagram of a process of attaching a target layer in the method for realizing single-sided light emission of an LED according to the present invention;
fig. 3 is a schematic structural diagram of a process of forming a light shielding layer in the method for realizing single-sided light emission of an LED according to the present invention.
In the figure, an LED epitaxial layer, a 2 PSS substrate, a 3 LED functional structure layer, a 4 metal electrode, a 5 target layer and a 6 shading layer.
Detailed Description
The invention will be described in detail with reference to the accompanying drawings and detailed description.
Example 1
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the wafer surface with a photoresist thermosetting resin to form a target layer 5 on the wafer surface by a spin coating or spray coating mode, as shown in fig. 2; the wafer is exposed by using a photoetching plate with an electrode pattern, the glue on the surface of the electrode is washed off through a developing process, the electrode is exposed, the patterned target layer 5 is cured through heat curing, and finally the light shielding layer 6 is formed, wherein the thickness of the light shielding layer is generally defined according to the application light shielding requirement and the reflectivity and the transmissivity of the material for absorbing the reflecting layer, and is generally in the range of 1nm-10um, as shown in fig. 3, and a small amount of residual glue on the surface of the electrode is washed by including but not limited to gas plasma when necessary.
Example 2
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; the photoresist is uniformly covered on the surface of the wafer by a spin coating or spray coating mode to form a target layer 5, as shown in fig. 2; the wafer is exposed and cured by using a photoetching plate with an electrode pattern, the glue on the surface of the electrode is washed off by a developing process, the electrode is exposed, and finally a shading layer 6 is formed, wherein the thickness of the shading layer is generally defined according to the application shading requirement and the reflectivity and the transmissivity of the material of the absorption reflecting layer, and is generally in the range of 1nm-10um, and as shown in fig. 3, a small amount of residual glue on the surface of the electrode is washed by including but not limited to gas plasma when necessary.
Example 3
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; the target layer 5 is formed by uniformly covering the surface of the wafer with negative photoresist by spin coating or spray coating, as shown in fig. 2; the exposure lithography process is to expose the light-emitting surface, the conventional lithography process is to expose and develop the mask plate to form a patterned film layer, the light-emitting surface is to expose the wafer, the light intensity required by photo-curing of the photoresist is converted by measuring and calculating the light intensity transmittance of the wafer, the electrode structure of the LED is used as a shading mask to expose the wafer, the glue above the electrode is in an uncured state because the glue is not irradiated by light, the electrode surface is washed out by the development process to expose the electrode, finally the shading layer 6 is formed, the thickness of the shading layer is defined according to the application shading requirement and the reflectivity and transmittance of the material for absorbing the reflecting layer, and the thickness is generally in the range of 1nm-10um, as shown in figure 3, and a small amount of residual glue on the surface of the electrode is washed by including but not limited by gas plasma when necessary.
Example 4
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the surface of the wafer with a negative photoresist thermosetting adhesive by spin coating or spray coating to form a target layer 5, as shown in fig. 2; the exposure lithography process is to expose the light-emitting surface, the conventional lithography process is to expose and develop the mask plate to form a patterned film layer, the light-emitting surface is used for reverse incidence, the light intensity transmittance of the wafer is measured, the light intensity required by photo-curing of the photoresist is converted, the electrode structure of the LED is used as a shading mask to expose the wafer, the glue above the electrode is in an uncured state because the glue is not irradiated by light, the electrode surface is cleaned by the development process, the electrode is exposed, the patterned target layer 5 is cured by heat curing, the shading layer 6 is finally formed, the thickness of the shading layer is generally defined according to the application shading requirement, the reflectivity and transmittance of the material of the absorbing reflective layer, and the thickness is generally in the range of 1nm-10um, and a small amount of residual glue on the surface of the electrode is cleaned by including but not limited by gas plasma when necessary as shown in fig. 3.
Example 5
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the wafer surface with thermosetting adhesive by spin coating or spray coating, and curing at high temperature to form a target layer 5, as shown in fig. 2; because of the height difference between the electrode and other structures, when the target layer is covered, the thickness difference is formed between the electrode surface glue thickness and the lower structure glue thickness, the bombardment rate is accurately calculated by utilizing the height difference between the electrode surface and the lower structure, the electrode is exposed by gas plasma bombardment, meanwhile, the structure below the electrode step still remains enough light absorption target layer, and finally a light shielding layer 6 is formed, wherein the thickness of the light shielding layer is generally defined according to the light shielding requirement and the reflectivity and transmittance of the light absorption reflecting layer material, and is generally in the range of 1nm-10um, as shown in fig. 3.
Example 6
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the wafer surface with the photo-setting adhesive by spin coating or spray coating, and curing by exposure to form a target layer 5, as shown in fig. 2; because of the height difference between the electrode and other structures, when the target layer is covered, the thickness difference is formed between the electrode surface glue thickness and the lower structure glue thickness, the bombardment rate is accurately calculated by utilizing the height difference between the electrode surface and the lower structure, the electrode is exposed by gas plasma bombardment, meanwhile, the structure below the electrode step still remains enough light absorption target layer, and finally a light shielding layer 6 is formed, wherein the thickness of the light shielding layer is generally defined according to the light shielding requirement and the reflectivity and transmittance of the light absorption reflecting layer material, and is generally in the range of 1nm-10um, as shown in fig. 3.
Example 7
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the surface of the wafer with the ink by a spin coating or spray coating method, and volatilizing and solidifying the ink filling agent to form a target layer 5, as shown in fig. 2; because of the height difference between the electrode and other structures, when the target layer is covered, the thickness difference between the electrode surface ink and the lower structure ink is formed, the bombardment rate is accurately calculated by utilizing the height difference between the electrode surface and the lower structure, the electrode is exposed through gas plasma bombardment, meanwhile, the structure below the electrode step still remains enough light absorption target layer, and finally a light shielding layer 6 is formed, wherein the thickness of the light shielding layer is generally defined according to the application light shielding requirement and the reflectivity and transmittance of the light absorption reflecting layer material, and is generally in the range of 1nm-10um, as shown in fig. 3.
Example 8
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the wafer surface with wet gas glue by spin coating or spray coating, and curing to form a target layer 5, as shown in fig. 2; because of the height difference between the electrode and other structures, when the target layer is covered, the thickness difference is formed between the wet adhesive on the surface of the electrode and the wet adhesive on the structure below, the bombardment rate is precisely calculated by utilizing the height difference between the surface of the electrode and the structure below, the electrode is exposed by gas plasma bombardment, meanwhile, the structure below the electrode step still remains enough light absorption target layer, and finally a light shielding layer 6 is formed, wherein the thickness of the light shielding layer is generally defined according to the light shielding requirement and the reflectivity and transmittance of the material for absorbing the light reflection layer, and is generally in the range of 1nm-10um, as shown in fig. 3.
Example 9
Providing a wafer as shown in fig. 1, including but not limited to GaN and GaAs based LED (without dicing) wafers that complete the LED flip chip full structure process, the structure generally includes: an LED epitaxial layer 1, a PSS substrate 2, an LED functional structure layer 3 (including but not limited to a current diffusion layer, an ohmic contact layer, a dielectric layer, a reflective layer, etc.), a metal electrode 4; uniformly covering the wafer surface with the instant adhesive by spin coating or spray coating, and curing to form a target layer 5, as shown in fig. 2; because of the height difference between the electrode and other structures, when the target layer is covered, the thickness difference is formed between the instantaneous adhesive on the electrode surface and the instantaneous adhesive on the structure below, the bombardment rate is accurately calculated by utilizing the height difference between the electrode surface and the structure below, the electrode is exposed through gas plasma bombardment, meanwhile, the structure below the electrode step still keeps enough light absorption target layer, and finally, a light shielding layer 6 is formed, the thickness of the light shielding layer is generally defined according to the light shielding requirement of application and the reflectivity and the transmissivity of the material of the light absorption reflecting layer, and is generally in the range of 1nm-10um, as shown in fig. 3.
Claims (5)
- The method for realizing single-sided light emission of the LED is characterized by comprising the steps of providing an LED wafer, attaching a shading material on the surface of a non-light-emitting surface of the LED wafer to form a target layer (5), patterning the target layer (5) by using a photoetching process after the target layer (5) is formed, and exposing an electrode to be externally arranged by using a developing process to form a shading layer (6); or after the target layer (5) is formed, the target layer (5) is directly solidified, and then the electrode is exposed and externally arranged by directly carrying out gas plasma bombardment to form the shading layer (6).
- 2. The method of claim 1, wherein the lithography process comprises exposing an LED wafer using a lithography plate with an electrode pattern; or the LED wafer is subjected to incident exposure through the light emitting surface of the LED wafer, and the exposure parameters are optimized according to the transmittance of the LED wafer to the exposure light intensity, so that the electrode of the LED wafer is used as a shading photoetching plate to expose the LED wafer.
- 3. The method for realizing single-sided light emission of an LED according to claim 1, wherein the means for attaching the light shielding material comprises spin coating, spray coating or film coating.
- 4. The method of claim 1, wherein the attached light shielding material comprises a photoresist, a photoresist thermoset, a photo-cured, a flash-cured, a wet-air, or an ink.
- 5. The method for realizing single-sided light emission of the LED according to claim 1, wherein the PSS substrate (2) of the LED wafer is positioned in a light emitting surface, and the PSS substrate (2) is provided with an LED epitaxial layer (1), an LED functional structure layer (3) and a metal electrode (4) which are positioned in a non-light emitting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310796020.3A CN116666523A (en) | 2023-06-30 | 2023-06-30 | LED single-sided light emitting implementation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310796020.3A CN116666523A (en) | 2023-06-30 | 2023-06-30 | LED single-sided light emitting implementation method |
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| CN116666523A true CN116666523A (en) | 2023-08-29 |
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| CN202310796020.3A Pending CN116666523A (en) | 2023-06-30 | 2023-06-30 | LED single-sided light emitting implementation method |
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2023
- 2023-06-30 CN CN202310796020.3A patent/CN116666523A/en active Pending
Patent Citations (9)
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| JPH11249121A (en) * | 1998-03-05 | 1999-09-17 | Sharp Corp | Dot matrix type liquid crystal display and production thereof |
| US20130285091A1 (en) * | 2012-04-27 | 2013-10-31 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
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