CN116666488A - Gallium oxide photoelectric detector and preparation method thereof - Google Patents
Gallium oxide photoelectric detector and preparation method thereof Download PDFInfo
- Publication number
- CN116666488A CN116666488A CN202310620832.2A CN202310620832A CN116666488A CN 116666488 A CN116666488 A CN 116666488A CN 202310620832 A CN202310620832 A CN 202310620832A CN 116666488 A CN116666488 A CN 116666488A
- Authority
- CN
- China
- Prior art keywords
- gallium oxide
- channel layer
- region
- mesa
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 11
- 230000005669 field effect Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 6
- 239000008186 active pharmaceutical agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 201000004569 Blindness Diseases 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a gallium oxide photoelectric detector, which comprises: a substrate; the channel layer comprises a gallium oxide table top, the gallium oxide table top is arranged on the surface of the substrate, and the gallium oxide table top is suitable for responding to solar blind light; p is p + The region comprises a first part and a second part which are respectively positioned at two sides of the channel layer, the first part and the second part respectively form a transverse pn junction with the channel layer, and the source electrode is arranged at one end of the channel layer; a drain electrode disposed on the other end of the channel layer opposite to the source electrode; a gate electrode arranged at p + The surfaces of the first and second portions of the zone. The gallium oxide photoelectric detector provided by the invention can realize high response speed and high responsivity.
Description
Technical Field
At least one embodiment of the invention relates to a photoelectric detector, in particular to a gallium oxide solar blind photoelectric detector and a preparation method thereof.
Background
Solar blind light refers to ultraviolet light with the wavelength ranging from 220nm to 280nm, and the atmospheric ozone layer has strong absorption and scattering effects on the ultraviolet light in the wave band, and the radiation quantity reaching the ground surface is almost zero, so the solar blind light is called as solar blind light. In view of the outstanding characteristic of low background noise of solar blind light detection, solar blind light plays an extremely important role in the fields of fire remote sensing, environment monitoring, deep space detection, ultraviolet communication and the like.
In the field of solar blind light detection, the current practical devices are mainly a photomultiplier and an ultraviolet photoelectric tube, however, the photomultiplier has the defects of large volume, fragility, high vacuum, high working voltage and the like, so that the application of the photomultiplier in many aspects is limited. The ultraviolet phototube requires an additional optical filter, which increases the complexity of the solar blind light detection system. Compared with the external photoelectric effect device, the solar blind photoelectric detector with the wide forbidden band semiconductor realizes solar blind light detection by utilizing the internal photoelectric effect, has the advantages of small volume, low working voltage, high temperature resistance, irradiation resistance, simple and convenient operation and the like, and has larger commercial value.
Disclosure of Invention
In view of the above, the invention provides a gallium oxide photoelectric detector and a preparation method thereof, so as to realize fast response speed and high responsivity to solar blind light detection.
The invention provides a gallium oxide photodetector, comprising: a substrate; a channel layer comprising a gallium oxide mesa disposed on the substrate surface, the gallium oxide mesa adapted to respond toSolar blindness light; p is p + The region comprises a first part and a second part which are respectively positioned at two sides of the channel layer, and the first part and the second part respectively form a transverse pn junction with the channel layer; a source electrode disposed on one end of the channel layer; a drain electrode disposed on the other end of the channel layer opposite to the source electrode; a gate electrode arranged at p + The surfaces of the first and second portions of the zone.
The invention also provides a preparation method of the gallium oxide photoelectric detector, which comprises the following steps: depositing a gallium oxide film on a substrate, and patterning the gallium oxide film to obtain a gallium oxide mesa serving as a channel layer; deposition of p on substrate and channel layer + Film, patterned p + The p is obtained by the film + Region, p + The region comprises a first part and a second part which are respectively positioned at two sides of the channel layer; respectively depositing a source electrode and a drain electrode on two ends of the gallium oxide mesa; at p + A gate electrode is deposited over the first and second portions of the region, respectively.
According to the gallium oxide photodetector provided by the embodiment of the invention, the gallium oxide photodetector is formed by the channel layer and p + The region forms two or more pn junctions, so that the control effect of the grid voltage on the channel is enhanced, and the response speed of the device is improved.
Drawings
FIG. 1 is a schematic diagram of a gallium oxide photodetector according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a gallium oxide photodetector according to another embodiment of the invention;
FIG. 3 is a schematic diagram of a gallium oxide photodetector according to yet another embodiment of the invention;
FIG. 4 is a schematic diagram of a transfer characteristic of a gallium oxide photodetector according to an embodiment of the invention;
FIG. 5 is a schematic diagram of an output characteristic of a gallium oxide photodetector according to an embodiment of the invention;
FIG. 6 is a schematic diagram of the I-t characteristic of a gallium oxide photodetector according to an embodiment of the invention; and
fig. 7 is a flow chart of a method of fabricating a gallium oxide photodetector according to an embodiment of the invention.
[ reference numerals description ]
1-a substrate;
a 2-channel layer;
3-p + a zone;
4-a source electrode;
5-a drain electrode;
6-gate electrode.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for the same elements throughout.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
As a typical wide bandgap semiconductor, the bandgap of gallium oxide is between 4.7eV and 5.1eV, which corresponds to the solar blind band, and is a direct bandgap semiconductor, which can be used for preparing a solar blind photodetector with intrinsic selectivity. In particular, gallium oxide is compared with Mg x Ga 1-x N、Mg x Zn 1-x O, alN and the like, and has higher chemical/thermal stability, thereby providing important material support for realizing solar blind photo detectors under extreme environmental conditions.
Compared with the traditional two-end photoconductive device and the photovoltaic device, the three-end field effect transistor device can regulate and control the carrier concentration of a channel by utilizing the gate end, has an internal gain mechanism, and is hopeful to realize a photoelectric detector with high responsivity and high response speed. In a three-terminal field effect transistor device, the junction field effect transistor can avoid interface traps in the metal oxide semiconductor field effect transistor and reliability problems arising from hot electron injection and trapping, and does not rely on good schottky contacts like a metal-semiconductor field effect transistor, so that gate leakage can be reduced by a higher built-in potential. Therefore, the invention provides a junction field effect transistor photoelectric detector based on gallium oxide and a preparation method thereof.
Fig. 1 is a schematic diagram of a gallium oxide photodetector according to an embodiment of the invention.
According to an exemplary embodiment of the present invention, there is provided a gallium oxide photodetector, as shown with reference to fig. 1, comprising:
a substrate 1; the channel layer 2 comprises a gallium oxide mesa which is arranged on the surface of the substrate 1 and is suitable for responding to solar blind light; p is p + A region 3 including a first portion and a second portion respectively located at both sides of the channel layer 2, the first portion and the second portion respectively forming a lateral pn junction with the channel layer 2; a source electrode 4 disposed on one end of the channel layer 2; a drain electrode 5 provided on the other end of the channel layer 2 opposite to the source electrode 4; a gate electrode 6 arranged at p + The surfaces of the first and second portions of zone 3.
According to an embodiment of the invention, p + The region 3 further comprises a third portion which is located on the channel layer 2 such that the third portion forms a vertical pn-junction with the channel layer 2. P is p + The third portion of region 3 at least partially overlies channel layer 2.
Fig. 2 is a schematic diagram of a gallium oxide photodetector according to another embodiment of the invention.
Referring to FIG. 2, p + The third portion of region 3 partially overlies channel layer 2, p + The third portion of region 3 forms a vertical pn-junction with channel layer 2.
Fig. 3 is a schematic view of a gallium oxide photodetector according to yet another embodiment of the invention.
Referring to FIG. 3, p + The third part of region 3 completely covers channel layer 2, p + The third portion of region 3 forms a vertical pn-junction with channel layer 2.
According to an embodiment of the invention, p + The third portion of region 3 has a thickness of 10-100 nm so that solar blind light satisfying a predetermined transmittance is transmitted through p + The third portion of region 3 is incident on channel layer 2.
According to an embodiment of the invention, if p + Region 3 does not cover the gallium oxide mesa surface at all, p + The thickness of the region 3 is 30-100 nm higher than that of the gallium oxide mesa to ensure that carriers in the surface region of the gallium oxide mesa are fully depleted and reduce surface leakage.
According to an embodiment of the present invention, the channel layer 2 and p are used for the channel layer + The region 3 forms two or more pn junctions, and the control action of the gate voltage on the channel layer 2 is enhanced to improve the response speed of the device.
According to an embodiment of the invention, the substrate 1 is an insulating or semi-insulating substrate, the substrate 1 may be a substrate with SiO 2 A quartz substrate, a sapphire substrate, a semi-insulating gallium oxide substrate, or the like.
According to an embodiment of the present invention, the gallium oxide mesa is formed of an n-type gallium oxide material having high resistivity under non-illumination. The resistivity of the n-type gallium oxide material is 0.6Ω·cm to 6500Ω·cm.
According to an embodiment of the invention, the material of the gallium oxide mesa comprises beta-Ga 2 O 3 The doping concentration of the gallium oxide mesa is 1 multiplied by 10 13 cm -3 ～1×10 15 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The width of the gallium oxide mesa is 1nm to 2 μm, wherein the width of the gallium oxide mesa (i.e., the thickness of the channel layer 2, along the x-direction in fig. 1) is p + The spacing between the first and second portions of zone 3.
According to an embodiment of the invention, the doping concentration of the gallium oxide mesa is less than p + The doping concentration of region 3 is such that the gallium oxide mesa is aligned with p + The depletion region of the pn junction formed in the region 3 is mainly arranged on one side of the gallium oxide table surface, so that the channel can be turned off when no grid voltage is externally applied, and the preparation of the enhanced junction field effect transistor is realized.
According to an embodiment of the invention, p + The doping concentration of region 3 is 1×10 17 cm -3 ～1×10 20 cm -3 。
According to the embodiment of the invention, the channel layer 2 and p are formed by preparing the channel layer 2 with low doping concentration and thin thickness + The built-in electric field of the grid pn junction formed by the region 3 completely depletes the carriers of the channel layer 2 in no illumination, so that the preparation of the enhanced junction field effect transistor is realized, meanwhile, the dark current of the device is reduced, the photo-generated carriers (electron-hole pairs) generated by the gallium oxide table top under the illumination condition are rapidly transported to two ends of the source electrode 4 and the drain electrode 5 under the action of source-drain voltage, and the responsivity of the device is further improved.
According to an embodiment of the present invention, the materials of the source electrode 4, the drain electrode 5, and the gate electrode 6 include one or more of Ti, cr, ni, pt, au, ag, W, in, al, ru, pd, tiN, ITO and graphene. The shape of the electrode is not limited herein.
According to an embodiment of the present invention, the thickness of the source electrode 4 is 1nm to 100nm, and for example, the thickness may be 1nm, 10nm, 30nm, 50nm, 100nm.
According to an embodiment of the present invention, the thickness of the drain electrode 5 is 1nm to 100nm, for example, the thickness may be 1nm, 10nm, 30nm, 50nm, 100nm.
Fig. 4 is a schematic diagram of a transfer characteristic of a gallium oxide photodetector according to an embodiment of the invention.
Referring to fig. 4, a voltage U between the source electrode 4 and the drain electrode 5 DS Under certain conditions, when the photodetector receives solar blind light, the channel current I between the source electrode 4 and the drain electrode 5 of the device DS Obviously increases and the electron concentration in the gallium oxide mesa is increased, so that the gallium oxide mesa and p + The width of the depletion region on the gallium oxide mesa side in the pn junction formed by region 3 is reduced, which in turn results in a reduction in threshold voltage.
Fig. 5 is a schematic diagram of an output characteristic of a gallium oxide photodetector according to an embodiment of the invention.
Referring to fig. 5, between the source electrode 4 and the gate electrode 6Voltage U GS Under certain conditions, when the solar blind light irradiates the device, the channel current I between the source electrode 4 and the drain electrode 5 of the device DS Obviously increases and the saturation voltage U of the device is caused by the decrease of the threshold voltage Dsat And increases.
FIG. 6 is a schematic diagram of the I-t characteristic of a gallium oxide photodetector according to an embodiment of the invention.
Referring to FIG. 6, when solar blind light irradiates the device, the channel current I of the device DS Rapidly increasing to higher levels and remaining unchanged; after removing solar blind light, channel current I of device DS And quickly returns to a level comparable to the dark current.
Fig. 7 is a flow chart of a method of fabricating a gallium oxide photodetector according to an embodiment of the invention.
According to an exemplary embodiment of the present invention, the present invention provides a method for manufacturing a gallium oxide photodetector, referring to fig. 7, including: step S01 to step S04.
In step S01, a gallium oxide film is deposited on the substrate 1, and the gallium oxide film is patterned to obtain a gallium oxide mesa serving as the channel layer 2.
Before depositing the gallium oxide film on the substrate 1, the substrate 1 is subjected to pretreatment such as cleaning and polishing, so that the substrate 1 is kept clean and flat.
According to an embodiment of the present invention, a gallium oxide thin film is formed on a substrate 1 by using one of chemical/physical deposition such as Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), ion-enhanced chemical vapor deposition (PECVD), atomic Layer Deposition (ALD), pulse Laser Deposition (PLD), sputtering (sputter), and mechanical lift-off transfer.
According to an embodiment of the present invention, the gallium oxide thin film is lightly doped n-type gallium oxide, and the thickness of the gallium oxide thin film is 3nm to 10 μm, for example, the thickness may be 3nm, 100nm, 1 μm, 5 μm, 10 μm.
According to an embodiment of the present invention, the length (y direction in fig. 1) of the channel layer 2 is 1nm to 5 μm, and for example, the length may be 1nm, 100nm, 1 μm, 2 μm, 5 μm.
According to the embodiment of the invention, the gallium oxide film is patterned by adopting methods such as dry etching, wet etching or plasma etching, and the etching thickness is slightly larger than the thickness of the gallium oxide film so as to ensure that gallium oxide in an etched area is completely removed, thereby obtaining a gallium oxide mesa; after etching, the etching damage can be repaired by means of high-temperature annealing, solution soaking and the like.
In step S02, p is deposited on the substrate 1 and the channel layer 2 + Film, patterned p + The p is obtained by the film + Region 3, p + The region 3 includes a first portion and a second portion on both sides of the channel layer 2.
According to the embodiment of the invention, a nickel oxide film is deposited on the surfaces of the substrate 1 and the gallium oxide mesa by adopting any chemical/physical deposition mode such as MOCVD, PECVD, ALD, PLD, sputter, and the thickness of the nickel oxide film is 3 nm-10 μm, for example, the thickness can be 3nm, 100nm, 1 μm, 5 μm and 10 μm.
According to an embodiment of the invention, p in the y-direction + The length of the region 3 is 1nm to 2 μm, p in the x-direction + The length of the nickel oxide zone 3 is not limited.
In step S03, a source electrode 4 and a drain electrode 5 are deposited on both ends of the gallium oxide mesa, respectively.
According to the embodiment of the invention, thin-layer metals are respectively grown at two ends of a gallium oxide channel table top by adopting an electron beam evaporation method to serve as a source electrode 4 and a drain electrode 5.
In step S04, at p + A gate electrode 6 is deposited over the first and second portions of region 3, respectively.
According to an embodiment of the invention, electron beam evaporation is used at p + The surfaces of the first and second portions of region 3 deposit gate electrode 6, the thickness of gate electrode 6 being not limited herein.
According to an embodiment of the invention, p + The region 3 further comprises a third portion at least partially overlying the channel layer 2. According to an embodiment of the invention, p + Zone 3 is made of nickel oxide or stannous oxide.
According to the present inventionThe gallium oxide photodetector provided by the embodiment of the invention is formed by a channel layer and p + The region forms two or more pn junctions, so that the control effect of the grid voltage on the channel is enhanced, and the response speed of the device is improved.
According to the gallium oxide photoelectric detector provided by the embodiment of the invention, the channel layer and the p are formed by preparing the channel layer with low doping concentration and thin thickness + The built-in electric field of the grid pn junction formed by the region completely depletes the current carrier of the channel layer when no illumination exists, so that the preparation of the enhanced junction field effect transistor is realized, the dark current of the device is reduced, and the responsivity of the device is improved.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.
Claims (10)
1. A gallium oxide photodetector, comprising:
a substrate (1);
a channel layer (2), wherein the channel layer (2) comprises a gallium oxide mesa which is arranged on the surface of the substrate (1) and is suitable for responding to solar blind light;
p + -a region (3) comprising a first portion and a second portion, respectively located on both sides of said channel layer (2), said first portion and said second portion forming a lateral pn-junction with said channel layer (2), respectively;
a source electrode (4) provided on one end of the channel layer (2);
a drain electrode (5) provided on the other end of the channel layer (2) opposite to the source electrode (4);
a gate electrode (6) provided at the p + The surfaces of the first and second parts of the zone (3).
2. According to the weightsThe gallium oxide photodetector of claim 1, wherein said p + The zone (3) is made of nickel oxide or stannous oxide.
3. The gallium oxide photodetector of claim 1, wherein,
the p is + The region (3) further comprises a third portion located on the channel layer (2) such that the third portion forms a vertical pn-junction with the channel layer (2).
4. A gallium oxide photodetector according to claim 3, wherein the third portion at least partially overlies the channel layer (2).
5. A gallium oxide photodetector according to claim 3 or 4, wherein the thickness of the third portion is 10 to 100nm so that the solar blind light is transmitted through the p + A third portion of the region (3) is incident on the channel layer (2).
6. The gallium oxide photodetector of claim 1, wherein said gallium oxide mesa is formed from an n-type gallium oxide material having a high resistivity in the absence of light;
the resistivity of the n-type gallium oxide material is 0.6Ω·cm to 6500Ω·cm.
7. The gallium oxide photodetector of claim 6, wherein the material of said gallium oxide mesa comprises β -Ga 2 O 3 ；
The doping concentration of the gallium oxide mesa is 1 multiplied by 10 13 cm -3 ～1×10 19 cm -3 ；
Preferably, the width of the gallium oxide mesa is 1 nm-2 μm, wherein the width of the gallium oxide mesa is the p + The distance between the first and second portions of the zone (3).
8. The oxygen of claim 1Gallium-nitride photodetector, characterized in that the p + The doping concentration of the region (3) is greater than that of the gallium oxide mesa;
preferably, said p + The doping concentration of the region (3) is 1×10 17 cm -3 ～1×10 20 cm -3 。
9. A method of manufacturing a gallium oxide photodetector according to any one of claims 1 to 8, comprising:
depositing a gallium oxide film on a substrate (1), and patterning the gallium oxide film to obtain a gallium oxide mesa serving as a channel layer (2);
depositing p on the substrate (1) and the channel layer (2) + Patterning the p-type thin film + The p is obtained by the film + Region (3), said p + The region (3) comprises a first portion and a second portion located on both sides of the channel layer (2), respectively;
respectively depositing a source electrode (4) and a drain electrode (5) on two ends of the gallium oxide mesa; and
at said p + A gate electrode (6) is deposited on the first and second portions of the region (3), respectively.
10. The method of claim 9, wherein p is + The region (3) further comprises a third portion at least partially overlying the channel layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310620832.2A CN116666488A (en) | 2023-05-26 | 2023-05-26 | Gallium oxide photoelectric detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310620832.2A CN116666488A (en) | 2023-05-26 | 2023-05-26 | Gallium oxide photoelectric detector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116666488A true CN116666488A (en) | 2023-08-29 |
Family
ID=87725521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310620832.2A Pending CN116666488A (en) | 2023-05-26 | 2023-05-26 | Gallium oxide photoelectric detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116666488A (en) |
-
2023
- 2023-05-26 CN CN202310620832.2A patent/CN116666488A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9233845B2 (en) | Optoelectronic platform with carbon based conductor and quantum dots and transistor comprising such a platform | |
| JP4977695B2 (en) | Ultraviolet light receiving element | |
| CN111739960B (en) | Gain type heterojunction ultraviolet photoelectric detector | |
| US7838330B1 (en) | Method of field-controlled diffusion and devices formed thereby | |
| Narita et al. | Ultraviolet photodetectors using transparent gate AlGaN/GaN high electron mobility transistor on silicon substrate | |
| US11217709B2 (en) | Graphene-semiconductor heterojunction photodetector and method of manufacturing the same | |
| CN111640817A (en) | Suspended transverse double-heterojunction optical detector and manufacturing method thereof | |
| CN112635614A (en) | Photoelectric detector adopting gate modulation graphene/semiconductor Schottky junction and preparation method | |
| CN110571301A (en) | Gallium oxide based solar blind detector and preparation method thereof | |
| CN108878576B (en) | Gallium oxide-based ultraviolet detector | |
| Wang et al. | Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature | |
| CN108615783B (en) | Schottky ultraviolet detector and manufacturing method thereof | |
| CN111106204B (en) | Solar blind ultraviolet detector based on III-V group semiconductor high electron mobility transistor and manufacturing method | |
| CN108615782B (en) | Ultraviolet detector and manufacturing method thereof | |
| CN116666488A (en) | Gallium oxide photoelectric detector and preparation method thereof | |
| Hwang et al. | High-performance multicolor p-Ag: NiOx/n-Si heterojunction photodiode enhanced by Ag-doped NiOx | |
| KR102563180B1 (en) | Ultraviolet Detecting Device and Manufacturing thereof | |
| CN111739963B (en) | Preparation method of silicon-based wide-spectrum photoelectric detector | |
| JP7212437B2 (en) | Semiconductor device, its manufacturing method and semiconductor manufacturing system | |
| JP2003023175A (en) | Msm type semiconductor light receiving element | |
| US10043920B2 (en) | Highly responsive III-V photodetectors using ZnO:Al as n-type emitter | |
| KR102320117B1 (en) | Graphene-Semiconductor Heterojunction Photodetector and Method for Manufacturing the Same | |
| KR102395180B1 (en) | Thin film transistor photo sensor and preparation method thereof | |
| Chiu et al. | Enhanced optical responsivity of InAlAs∕ InGaAs metamorphic high mobility electron mobility using indium tin oxide transparent gate technology | |
| CN116565053A (en) | Multi-heterojunction photoelectric detector based on polarization effect and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |