CN116666322A - 半导体封装件、冷却系统、基板以及该基板制造方法 - Google Patents
半导体封装件、冷却系统、基板以及该基板制造方法 Download PDFInfo
- Publication number
- CN116666322A CN116666322A CN202211263449.8A CN202211263449A CN116666322A CN 116666322 A CN116666322 A CN 116666322A CN 202211263449 A CN202211263449 A CN 202211263449A CN 116666322 A CN116666322 A CN 116666322A
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- Prior art keywords
- heat dissipation
- semiconductor package
- metal layer
- layer
- dissipation structure
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000001816 cooling Methods 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 7
- 230000017525 heat dissipation Effects 0.000 claims abstract description 219
- 239000002184 metal Substances 0.000 claims abstract description 126
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 176
- 239000002826 coolant Substances 0.000 claims description 46
- 239000012790 adhesive layer Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 238000000465 moulding Methods 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000000498 cooling water Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000000110 cooling liquid Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000003570 air Substances 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000004378 air conditioning Methods 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000013007 heat curing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000013021 overheating Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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Abstract
本发明公开一种半导体封装件、冷却系统、基板以及该基板的制造方法,具有散热结构的半导体封装件包括:一个以上的基板,包括结构性地接合有散热柱的散热金属层和一个以上的绝缘层;一个以上的半导体芯片,下表面接合于基板,上表面通过电信号线与端子引线电连接;及成型外壳,覆盖半导体芯片、端子引线的一部分、基板的一部分或全部。
Description
技术领域
本发明涉及一种具有散热结构的半导体封装件、接合有半导体封装件的冷却系统、具有散热结构的基板以及具有散热结构的基板的制造方法,更具体地,涉及一种通过多种形状和结构的散热柱来扩大与冷却剂的接触面积,并借由柱孔形成冷却剂流动通道,从而能够有效地冷却半导体芯片产生的热量的具有散热结构的半导体封装件、接合有半导体封装件的冷却系统、具有散热结构的基板以及具有散热结构的基板的制造方法。
背景技术
众所周知,电气及电子部件,尤其,半导体部件在驱动时会产生相当大的热量,因此形成散热片或应用冷却系统来防止过热,从而维持驱动性能。
尤其,适用于高功率应用领域的半导体部件可以借由循环冷却剂的冷却系统而有效地防止过热。
另外,在冷却系统中,插入与循环的冷却剂接触的立柱来冷却从半导体部件传递到立柱的热量,然而,在现有技术中,立柱借由加工或铸件制造的方式而与构成冷却系统的上部基板和/或下部基板形成为一体,因此存在大部分只能形成为线形结构的局限性。
即,通过单一的线形结构的立柱的冷却方式在最大化导热效率或散热效率方面仍然存在局限性,为了克服这种局限性,提出了应用多种形状及结构的散热柱来扩大接触面积,从而借由冷却剂的直接冷却方式而进一步改善导热效率及散热效率的必要性。
【现有技术文献】
【专利文献】
(专利文献1)韩国公开专利公报第10-2019-0133156号(半导体冷却装置,2019.12.02)
(专利文献2)韩国授权专利公报第10-1472642号(电子部件冷却用模块,2014.12.15公告)
发明内容
本发明的思想所要解决的技术问题在于提供一种通过多种形状和结构的散热柱来增加扩大与冷却剂的接触面积,并借由柱孔形成冷却剂流动通道,从而能够有效地冷却半导体芯片产生的热量的具有散热结构的半导体封装件、接合有半导体封装件的冷却系统、具有散热结构的基板以及具有散热结构的基板的制造方法。
为了解决上述结束问题,本发明的一实施例提供一种具有散热结构的半导体封装件,包括:一个以上的基板,包括结构性地接合有散热柱的散热金属层和一个以上的绝缘层;一个以上的半导体芯片,下表面接合于所述基板,上表面通过电信号线与端子引线电连接;及成型外壳,覆盖所述半导体芯片、所述端子引线的一部分、所述基板的一部分或全部,其中,所述散热柱形成为暴露于所述成型外壳的上表面、下表面或上下表面,所述绝缘层的面积大于所述散热金属层的面积,在所述成型外壳中,所述绝缘层形成为从所述散热金属层的边缘向外侧延伸预定的延伸长度,从所述绝缘层的底面到暴露所述散热柱的所述成型外壳的底面的距离为40μm至4mm,所述散热柱隔着一个以上的柱孔以预定间距排列而形成冷却剂流动通道,使冷却所述半导体芯片产生的热量的冷却系统的冷却剂在所述冷却剂流动通道循环。
在此,所述一个以上的基板可以构成为包括一个以上的所述散热金属层、堆叠于所述散热金属层上的所述绝缘层、堆叠于所述绝缘层上并安装有所述半导体芯片的金属图案层。
此时,在所述绝缘层与所述金属图案层之间或所述绝缘层与所述散热金属层之间可以形成有厚度小于所述金属图案层或所述散热金属层的金属粘合层。
此外,所述散热柱可以通过丝网掩模或模板掩模进行掩模,从而将金属膏或非金属膏可以印刷于所述散热金属层,并可以进行热固化而形成。
此外,所述散热柱可以为含有Sn成分的焊料,或者可以利用Al、Cu或陶瓷的单一材料形成,或者可以利用含有50%以上的Sn、Cu、Al及陶瓷中的一种以上的复合材料形成。
此外,在所述散热金属层与所述散热柱之间可以介设有粘合层而相互接合。
在此,所述粘合层可以利用Ag、Au、Cu、Ti、Ni、Pd或陶瓷的单一材料构成,或者可以利用含有50%以上的Ag、Au、Cu、Ti、Ni、Pd及陶瓷中的一种以上的复合材料构成。
此外,所述散热柱可以是波峰接合于所述散热金属层的底面的一个以上的波形结构体,在所述散热金属层与所述波形结构体之间且在相邻的波峰之间可以形成有一个以上的所述柱孔。
在此,所述波形结构体可以借由超声波焊接的方式接合于所述散热金属层。
此外,在一个以上的所述散热柱的一表面可以结构性地接合有一个以上的柱连接框架而形成柱连接体。
在此,在所述散热柱的上表面、下表面或上下表面可以形成有粘合层。
此外,在所述柱连接框架的上表面可以形成有粘合层。
此外,一层以上的所述柱连接体可以在所述散热金属层的底面堆叠而形成。
此外,所述散热金属层与所述散热柱之间的距离可以为10μm至3mm。
此外,从所述绝缘层的下表面的终端到所述散热金属层的上表面的终端的第一距离可以小于从所述绝缘层的下表面的终端到所述散热金属层的下表面的终端的第二距离。
在此,所述第一距离与所述第二距离之差可以为1μm至200μm。
此外,所述成型外壳可以利用含有环氧成分的复合材料构成。
此外,所述半导体芯片可以是MOSFET、IGBT,或可以是包括有GaN元件、SiC元件或Ga元件的半导体元件。
此外,所述柱连接框架可以插入于所述冷却系统内部。
此外,所述电信号线可以为金属线、金属夹片或金属间隔物。
此外,所述散热金属层可以利用Au、Cu、Al或Ni的单一材料构成,或者可以利用含有50%以上的Au、Cu、Al及Ni中的一种以上的合金材料构成,或者可以利用所述单一材料或所述合金材料构成的多层结构的金属材料构成。
此外,所述散热金属层和所述散热柱可以利用相同的材料构成。
此外,所述延伸长度可以为5μm至3mm。
此外,所述绝缘层可以利用Al2O3、AlN、Si3N4或PI的单一材料构成,或者可以利用包含Al2O3、AlN、Si3N4及PI中的一种以上的复合材料构成。
此外,在所述成型外壳的成型工序之后,所述散热柱可以接合于所述基板。
此外,所述冷却剂可以为冷却水、含有冷却水的冷却液、空气或氮气,或者可以包括冷却水、含有冷却水的冷却液、空气及氮气中的一种以上。
另外,本发明的另一实施例提供一种接合有具有上述的散热结构的半导体封装件的冷却系统。
此外,本发明的又一实施例提供一种具有散热结构的基板,包括:散热金属层,结构性地接合有散热柱;及一个以上的绝缘层,堆叠于所述散热金属层,其中,所述绝缘层的面积大于所述散热金属层的面积,所述绝缘层形成为从所述散热金属层的边缘向外侧延伸预定的延伸长度,所述散热柱隔着一个以上的柱孔以预定间距排列而形成冷却剂流动通道,使冷却系统的冷却剂在所述冷却剂流动通道循环。
此外,本发明的又一实施例提供一种具有散热结构的基板的制造方法,包括如下步骤:准备一个以上的绝缘层;在所述绝缘层的一表面形成散热金属层;及在所述散热金属层结构性地接合散热柱,其中,所述绝缘层的面积大于所述散热金属层的面积,所述绝缘层形成为从所述散热金属层的边缘向外侧延伸预定的延伸长度,所述散热柱隔着一个以上的柱孔以预定间距排列而形成冷却剂流动通道,使冷却系统的冷却剂在所述冷却剂流动通道循环。
根据本发明,具有如下效果:通过多种形状和结构的散热柱来扩大与冷却剂的接触面积,并借由柱孔形成冷却剂流动通道,从而能够有效地冷却半导体芯片产生的热量,并借由绝缘层覆盖散热金属层,从而防止向散热柱传递的热量逆向传递,并在单面基板及双面基板上能够分别应用冷却散热柱的冷却系统。
附图说明
图1是分别示出根据本发明的一实施例的具有散热结构的半导体封装件的剖面结构的图。
图2至图4是分别示例具有图1的散热结构的半导体封装件的多种散热柱的结合结构的图。
图5是分别示例具有图1的散热结构的半导体封装件的多种结构的图。
图6是分别示例具有图1的散热结构的半导体封装件与冷却系统之间的冷却结构的图。
图7是示意性地示例具有根据本发明的又一实施例的散热结构的基板的制造方法的流程图。
附图标记说明
111:散热柱 112:柱孔
113:粘合层 114:柱连接框架
120:基板 121:散热金属层
122:绝缘层 123:金属图案层
130:半导体芯片 140:成型外壳
A:波形结构体 B:柱连接体
具体实施方式
以下,参照附图对具有上述特征的本发明的实施例进行更详细的说明。
具有根据本发明的一实施例的散热结构的半导体封装件包括:一个以上的基板120,包括结构性地接合有散热柱111的散热金属层121和一个以上的绝缘层122;一个以上的半导体芯片130,下表面接合于基板120,上表面通过电信号线而与端子引线132电连接;及成型外壳140,覆盖半导体芯片130、端子引线132的一部分和基板120的一部分或全部,其中,散热柱111形成为暴露于成型外壳140的上表面、下表面或上下表面,绝缘层122的面积大于散热金属层121的面积,在成型外壳140中,绝缘层122形成为从散热金属层121的边缘向外侧延伸预定的延伸长度D1,从绝缘层122的底面到暴露散热柱111的成型外壳140的底面的距离D2为40μm至4mm,散热柱111隔着一个以上的柱孔112以预定间距排列,以形成冷却剂流动通道,使冷却半导体芯片130产生的热量的冷却系统150的冷却剂在冷却剂流动通道循环,并通过多种形状及结构的散热柱111来扩大与冷却剂的接触面积,从而有效地冷却半导体芯片130的散热。
以下,参照附图,对具有上述结构的散热结构的半导体封装件进行如下的具体说明。
首先,散热柱111结构性地接合于散热金属层121,以使热量从半导体芯片130传递到基板120外部。
另外,散热柱111可以在成型外壳140的成型工序之后接合于基板120。
接着,一个以上的基板120包括一个以上的绝缘层122。
在此,基板120可以利用一个以上的散热金属层121、堆叠于散热金属层121上的绝缘层122、堆叠于绝缘层122上并安装有半导体芯片130的金属图案层123构成。
此外,在绝缘层122与金属图案层123之间或在绝缘层122与散热金属层121之间可以形成有厚度小于金属图案层123或散热金属层121的100μm以下的金属粘合层(未示出)而相互接合。
此外,散热金属层121可以是利用Au、Cu、Al或Ni的单一材料构成,或者可以利用含有50%以上的Au、Cu、Al及Ni中的一种以上的合金材料构成,或者可以利用单一材料或合金材料构成的多层结构的金属材料构成,并且散热金属层121和散热柱111也可以利用相同的材料构成。
此外,绝缘层122可以利用Al2O3、AlN、Si3N4或PI的单一材料构成,或者可以利用包含Al2O3、AlN、Si3N4及PI中的一种以上的复合材料构成。
接着,一个以上的半导体芯片130的下表面接合于基板120,上表面通过电信号线131电连接于端子引线132,从而接收电信号。
在此,半导体芯片130可以是MOSFET、IGBT,或是包括有GaN元件、SiC元件或Ga元件的电力转换用半导体元件,这种半导体芯片130可以应用于转换或控制电力的逆变器、转换器或车载充电机(OBC:On Board Charger)等的装置,由于在将电力转换为特定电流、特定电压或特定频率的电力的过程中会产生相当多的热量,因此将通过冷却系统150进行冷却。
接着,成型外壳140可以形成为覆盖半导体芯片130、端子引线132的一部分和基板120的一部分或全部,并且可以利用含有环氧成分的复合材料固化而形成。
在此,参照图1,散热柱111可以形成为暴露于成型外壳140的上表面、下表面或上下表面,绝缘层122的面积可以大于散热金属层121的面积,在成型外壳140中,绝缘层122可以形成为从散热金属层121的边缘向外侧延伸5μm至3mm的延伸长度D1,从绝缘层122的底面到暴露散热柱111的成型外壳140的底面的距离D2可以为40μm至4mm,散热柱111可以隔着一个以上的柱孔112以预定间距排列,以形成冷却剂流动通道,使冷却半导体芯片130产生的热量的冷却系统150的冷却剂在冷却剂流动通道循环,从而可以借由散热柱111来扩大散热面积,并可以借由冷却剂直接冷却散热柱111,从而可以提高冷却效率,借由绝缘层122来覆盖散热金属层121,从而可以防止通过散热柱111传递的热量逆向传递,以保护半导体芯片130免受高温的影响。
此外,在冷却系统150的注入口和排出口循环的冷却剂可以是制冷剂流体、制冷剂气体和/或空气(冷气)。
在此,冷却剂可以选自冷却水、含有冷却水的冷却液、空气(冷气)及氮气中的一种,或者也可以包括冷却水、含有冷却水的冷却液、空气(冷气)及氮气中的一种以上。
另外,散热柱111通过丝网掩模或模板掩模进行掩模,以将金属膏或非金属膏直接印刷于散热金属层121上,并进行热固化,从而可以形成为如图2的(a)所示的散热柱111和散热金属层121相互直接接合而结合的结构,而无需额外的粘合层。
此外,为了提高导热效率,散热柱111可以是包含Sn成分的焊料,或者可以利用Al、Cu或陶瓷的单一材料形成,或者可以利用含有50%以上的Sn、Cu、Al及陶瓷中的一种以上的复合材料形成。
或者,如图2的(b)所示,可以形成为在散热金属层121与散热柱111之间介设导热性良好的粘合层113来相互接合而结合的结构,粘合层113可以利用Ag、Au、Cu、Ti、Ni、Pd或陶瓷的单一材料构成,或者可以利用含有50%以上的Ag、Au、Cu、Ti、Ni、Pd及陶瓷中的一种以上的复合材料构成。
在此,参照图2的(b)及图3的(c、d),介设有粘合层113的散热金属层121与散热柱111之间的相隔距离D3可以为10μm至3mm。
或者,如图2的(c)所示,散热柱111可以是其波峰接合于散热金属层121底面的一个以上的波形结构体A,在散热金属层121与波形结构体A之间且相邻的波峰之间可以形成有一个以上的柱孔112,波形结构体A借由超声波焊接的方式与散热金属层121相互接合。
或者,如图3的(a)所示,一个以上的柱连接框架114可以结构性地接合于一个以上的散热柱111的一表面,以形成柱连接体B,从而柱连接体B可以接合于散热金属层121的底面。
具体地,作为一示例,在上述的柱连接体B中,散热柱111可以超声波焊接于柱连接框架114而相互接合,如图3的(b)所示,在散热柱111的上表面、下表面或上下表面可以形成有粘合层113,从而散热柱111可以结合于散热金属层121和/或柱连接框架114。
或者,作为另一示例,在上述的柱连接体B翻转的状态下,如图3的(c)所示,粘合层113可以形成于柱连接框架114的上表面,从而柱连接框架114也可以结合于散热金属层121的底面,作为又一示例,如图3的(d)所示,粘合层113可以形成于柱连接框架114的上表面,从而柱连接框架114可以结合于散热金属层121的底面,并且散热柱111与柱连接框架114可以通过介设粘合层113而彼此结合。
另外,柱连接体B可以在散热金属层121的底面堆叠一层以上而形成,以扩大借由柱孔112形成的冷却剂流动通道,从而可以进一步提高冷却效率。
具体地,作为一示例,如图4的(a)所示,散热柱111可以沿着与散热金属层121接合的方向依次堆叠,或者如图4的(b)所示,上端柱连接体B1的柱连接框架114也可以在散热金属层121的底面介设粘合层113而结合,上端柱连接体B1的散热柱111也可以在下端柱连接体B2的柱连接框架114介设粘合层113而结合,如图4的(c)所示,上端柱连接体B1的散热柱111与翻转的下端柱连接体B2的散热柱111之间也可以介设粘合层113而结合。
此外,如图1中的放大图所示,从绝缘层122的下表面的终端到散热金属层121的上表面的终端的第一距离D4可以小于从绝缘层122的下表面终端到散热金属层121的下表面的终端的第二距离D5,优选地,第一距离D4与第二距离D5之间的差D6可以为1μm至200μm。通过将从绝缘层122的下表面的终端到散热金属层121的下表面的终端的第二距离D5形成为比从绝缘层122的下表面的终端到散热金属层121的上表面的终端的第一距离D4更长,从而可以在接合半导体芯片130之后,在形成成型外壳140时可以容易地填充成型外壳140的材料,此外,还可以容易地承受由于热膨胀系数(CTE)的差所引起的应力。并且,通过将第二距离D5形成为比第一距离D4更长,从而可以更有效地将从半导体芯片130产生的热量散发到外部。
图5是分别示例具有图1的散热结构的半导体封装件的多种结构的图,其中,图5的(a)是示例出在散热金属层121与柱连接框架114之间介设粘合层113而彼此结合且柱连接框架114的一部分或全部被引入到成型外壳140内的单面基板结构的图,并且图5的(b)是示例出散热金属层121结合于绝缘层122并借由金属间隔物131c而沿上下方向相隔开的双面基板结构的图。
图6是分别示例出具有图1的散热结构的半导体封装件与冷却系统之间的冷却结构的图,其中,图6的(a)是冷却系统150结合于单面基板的一表面的结构,图6的(b)是冷却系统150结合于双面基板的两表面的结构,参照图6的(b),柱连接框架114插入于冷却系统150中,以扩大与循环的冷却剂的接触面积,从而可以提高冷却效率。
另外,上述电信号线131可以是金属线131a、弯曲金属板的金属夹片131b或金属间隔物131c。
另外,参照图6,本发明的另一实施例提供了一种接合于具有上述散热结构的半导体封装件的冷却系统150。
此外,参照图6,本发明的又一实施例提供了一种具有如下的散热结构的基板,散热结构包括:散热金属层121,结构性地接合有散热柱111;一个以上的绝缘层122,堆叠于散热金属层121;及金属图案层123,堆叠于绝缘层122上并安装有半导体芯片130,其中,绝缘层122的面积大于散热金属层121的面积,绝缘层122形成为从散热金属层121的边缘向外侧延伸5μm至3mm的延伸长度D1,在散热柱111之间隔着一个以上的柱孔112以预定间距排列,以形成冷却剂流动通道,使冷却半导体芯片130产生的热量的冷却系统150的冷却剂在冷却剂流动通道循环。
图7是示意性地示例出具有根据本发明的又一实施例的散热结构的基板的制造方法的流程图,参照图7,具有散热结构的基板的制造方法包括如下步骤:准备一个以上的绝缘层122(S110);在绝缘层122的一表面形成安装有半导体芯片130的金属图案层123(S120);在绝缘层122的另一表面形成散热金属层121(S130);及在散热金属层121结构性地接合散热柱111(S140),其中,绝缘层122的面积大于散热金属层121的面积,绝缘层122形成为从散热金属层121的边缘向外侧延伸5μm至3mm的延伸长度D1,在散热柱111之间隔着一个以上的柱孔112以预定间距排列,从而形成冷却剂流动通道,使冷却半导体芯片130产生的热量的冷却系统150的冷却剂在冷却剂流动通道循环。
因此,根据本发明的结构,通过多种形状和结构的散热柱来扩大与冷却剂的接触面积,并借由柱孔形成冷却剂流动通道,从而能够有效地冷却半导体芯片产生的热量,并且借由绝缘层覆盖散热金属层,从而防止通过散热柱传递的热量逆向传递,并可以在单面基板及双面基板上分别应用冷却散热柱的冷却系统。
本说明书中记载的实施例和附图中示出的结构仅为本发明的最优选的一实施例,并不代表本发明的全部技术思想,因此,应理解为在本申请的观点来看可以存在能够代替这些的多样的等同物和变形例。
Claims (29)
1.一种具有散热结构的半导体封装件,包括:
一个以上的基板,包括结构性地接合有散热柱的散热金属层和一个以上的绝缘层;
一个以上的半导体芯片,下表面接合于所述基板,上表面通过电信号线与端子引线电连接;及
成型外壳,覆盖所述半导体芯片、所述端子引线的一部分、所述基板的一部分或全部,
其中,所述散热柱形成为暴露于所述成型外壳的上表面、下表面或上下表面,
所述绝缘层的面积大于所述散热金属层的面积,在所述成型外壳中,所述绝缘层形成为从所述散热金属层的边缘向外侧延伸预定的延伸长度,
从所述绝缘层的底面到暴露所述散热柱的所述成型外壳的底面的距离为40μm至4mm,
所述散热柱隔着一个以上的柱孔以预定间距排列而形成冷却剂流动通道,使冷却所述半导体芯片产生的热量的冷却系统的冷却剂在所述冷却剂流动通道循环。
2.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述一个以上的基板构成为包括一个以上的所述散热金属层、堆叠于所述散热金属层上的所述绝缘层、堆叠于所述绝缘层上并安装有所述半导体芯片的金属图案层。
3.根据权利要求2所述的具有散热结构的半导体封装件,其特征在于,
在所述绝缘层与所述金属图案层之间或所述绝缘层与所述散热金属层之间形成有厚度小于所述金属图案层或所述散热金属层的金属粘合层。
4.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述散热柱通过丝网掩模或模板掩模进行掩模,从而将金属膏或非金属膏印刷于所述散热金属层,并进行热固化而形成。
5.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述散热柱为含有Sn成分的焊料,或利用Al、Cu或陶瓷的单一材料形成,或者利用含有50%以上的Sn、Cu、Al及陶瓷中的一种以上的复合材料形成。
6.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,在所述散热金属层与所述散热柱之间介设有粘合层而相互接合。
7.根据权利要求6所述的具有散热结构的半导体封装件,其特征在于,
所述粘合层利用Ag、Au、Cu、Ti、Ni、Pd或陶瓷的单一材料构成,或者利用含有50%以上的Ag、Au、Cu、Ti、Ni、Pd及陶瓷中的一种以上的复合材料构成。
8.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述散热柱是波峰接合于所述散热金属层的底面的一个以上的波形结构体,在所述散热金属层与所述波形结构体之间且在相邻的波峰之间形成有一个以上的所述柱孔。
9.根据权利要求8所述的具有散热结构的半导体封装件,其特征在于,
所述波形结构体借由超声波焊接的方式接合于所述散热金属层。
10.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
在一个以上的所述散热柱的一表面结构性地接合有一个以上的柱连接框架而形成柱连接体。
11.根据权利要求10所述的具有散热结构的半导体封装件,其特征在于,在所述散热柱的上表面、下表面或上下表面形成有粘合层。
12.根据权利要求10所述的具有散热结构的半导体封装件,其特征在于,在所述柱连接框架的上表面形成有粘合层。
13.根据权利要求10所述的具有散热结构的半导体封装件,其特征在于,一层以上的所述柱连接体在所述散热金属层的底面堆叠而形成。
14.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述散热金属层与所述散热柱之间的距离为10μm至3mm。
15.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
从所述绝缘层的下表面的终端到所述散热金属层的上表面的终端的第一距离小于从所述绝缘层的下表面的终端到所述散热金属层的下表面的终端的第二距离。
16.根据权利要求15所述的具有散热结构的半导体封装件,其特征在于,
所述第一距离与所述第二距离之差为1μm至200μm。
17.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述成型外壳利用含有环氧成分的复合材料构成。
18.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述半导体芯片是MOSFET、IGBT,或是包括有GaN元件、SiC元件或Ga元件的半导体元件。
19.根据权利要求10所述的具有散热结构的半导体封装件,其特征在于,
所述柱连接框架插入于所述冷却系统内部。
20.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述电信号线为金属线、金属夹片或金属间隔物。
21.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述散热金属层利用Au、Cu、Al或Ni的单一材料构成,或者利用含有50%以上的Au、Cu、Al及Ni中的一种以上的合金材料构成,或者利用所述单一材料或所述合金材料构成的多层结构的金属材料构成。
22.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述散热金属层和所述散热柱利用相同的材料构成。
23.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述延伸长度为5μm至3mm。
24.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述绝缘层利用Al2O3、AlN、Si3N4或PI的单一材料构成,或者利用包含Al2O3、AlN、Si3N4及PI中的一种以上的复合材料构成。
25.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
在所述成型外壳的成型工序之后,所述散热柱接合于所述基板。
26.根据权利要求1所述的具有散热结构的半导体封装件,其特征在于,
所述冷却剂为冷却水、含有冷却水的冷却液、空气或氮气,或者包括冷却水、含有冷却水的冷却液、空气及氮气中的一种以上。
27.一种冷却系统,其中,
所述冷却系统接合有根据权利要求1所述的具有散热结构的半导体封装件。
28.一种具有散热结构的基板,包括:
散热金属层,结构性地接合有散热柱;及
一个以上的绝缘层,堆叠于所述散热金属层,
其中,所述绝缘层的面积大于所述散热金属层的面积,所述绝缘层形成为从所述散热金属层的边缘向外侧延伸预定的延伸长度,
所述散热柱隔着一个以上的柱孔以预定间距排列而形成冷却剂流动通道,使冷却系统的冷却剂在所述冷却剂流动通道循环。
29.一种具有散热结构的基板的制造方法,包括如下步骤:
准备一个以上的绝缘层;
在所述绝缘层的一表面形成散热金属层;及
在所述散热金属层结构性地接合散热柱,
其中,所述绝缘层的面积大于所述散热金属层的面积,所述绝缘层形成为从所述散热金属层的边缘向外侧延伸预定的延伸长度,
所述散热柱隔着一个以上的柱孔以预定间距排列而形成冷却剂流动通道,使冷却系统的冷却剂在所述冷却剂流动通道循环。
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