CN116646291B - Turnover mechanism for degumming photovoltaic silicon wafer - Google Patents
Turnover mechanism for degumming photovoltaic silicon wafer Download PDFInfo
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- CN116646291B CN116646291B CN202310921426.XA CN202310921426A CN116646291B CN 116646291 B CN116646291 B CN 116646291B CN 202310921426 A CN202310921426 A CN 202310921426A CN 116646291 B CN116646291 B CN 116646291B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 168
- 239000010703 silicon Substances 0.000 title claims abstract description 168
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 167
- 230000007306 turnover Effects 0.000 title claims abstract description 31
- 230000007246 mechanism Effects 0.000 title claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 193
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 90
- 230000001681 protective effect Effects 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 10
- 238000004804 winding Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 143
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 113
- 235000012431 wafers Nutrition 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 15
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 14
- 238000007254 oxidation reaction Methods 0.000 abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 238000001035 drying Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000003755 preservative agent Substances 0.000 description 4
- 230000002335 preservative effect Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65B—MACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
- B65B11/00—Wrapping, e.g. partially or wholly enclosing, articles or quantities of material, in strips, sheets or blanks, of flexible material
- B65B11/02—Wrapping articles or quantities of material, without changing their position during the wrapping operation, e.g. in moulds with hinged folders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65B—MACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
- B65B61/00—Auxiliary devices, not otherwise provided for, for operating on sheets, blanks, webs, binding material, containers or packages
- B65B61/04—Auxiliary devices, not otherwise provided for, for operating on sheets, blanks, webs, binding material, containers or packages for severing webs, or for separating joined packages
- B65B61/06—Auxiliary devices, not otherwise provided for, for operating on sheets, blanks, webs, binding material, containers or packages for severing webs, or for separating joined packages by cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to the technical field of photovoltaic silicon wafers, in particular to a turnover mechanism for degumming a photovoltaic silicon wafer. In the prior art, oxygen contained in ionized water can generate oxidation reaction with silicon crystals, so that the quality of the silicon crystals is affected. The technical implementation scheme of the invention is as follows: the turnover mechanism for degumming the photovoltaic silicon wafer comprises a mounting rack, a conveying belt and the like; the mounting bracket is installed the conveyer belt. According to the invention, nitrogen gas at high temperature and high pressure reacts with water drops and water stains on the surface of the silicon crystal in the reaction box, so that the nitrogen gas can be dissolved in water, the nitrogen gas can be contacted with the surface of the silicon crystal covered by the water drops, and the problems that the nitrogen gas cannot react with water at normal temperature and normal pressure, cannot be contacted with the surface of the silicon crystal covered by the water drops, the part of the surface of the silicon crystal, which is provided with the water drops, cannot be protected by the nitrogen gas for the first time, oxygen contained in the ionized water can be subjected to oxidation reaction with the silicon crystal, an oxide layer is formed on the surface of the silicon crystal, and the process of the next procedure and the final efficiency of the battery piece are affected are solved.
Description
Technical Field
The invention relates to the technical field of photovoltaic silicon wafers, in particular to a turnover mechanism for degumming a photovoltaic silicon wafer.
Background
Nitrogen is a colorless, odorless gas that is slightly soluble in alcohol and water (100 ml water can dissolve 24ml nitrogen at 273K and 100 kPa).
When the silicon crystal enters the nitrogen box, nitrogen cannot react with water at normal temperature and normal pressure, so that the nitrogen cannot contact with the surface of the silicon crystal covered by water drops, the part of the surface of the silicon crystal, which is provided with the water drops, cannot be protected by the nitrogen for the first time, oxygen contained in the ionized water can perform oxidation reaction with the silicon crystal, an oxide layer is formed on the surface of the silicon crystal, and the process of the next working procedure and the final efficiency of the battery piece are affected.
Disclosure of Invention
In order to overcome the defects that in the prior art, a part of the surface of a silicon crystal with water drops cannot be protected by nitrogen for the first time, and oxygen contained in ionized water can be subjected to oxidation reaction with the silicon crystal to influence the quality of the silicon crystal, the invention provides a turnover mechanism for degumming a photovoltaic silicon wafer.
The technical implementation scheme of the invention is as follows: the turnover mechanism for degumming the photovoltaic silicon wafer comprises a mounting rack and a conveying belt; the mounting frame is provided with a conveying belt; the reaction box, the heating box and the air suction plate are also included; the mounting frame is provided with a reaction box, and the reaction box covers the conveyer belt; the mounting frame is provided with a heating box, the heating box covers the conveyor belt, and the reaction box is communicated with the heating box; the heating box is externally connected with nitrogen conveying equipment; two suction plates which are symmetrically distributed in the front-back direction are arranged in the reaction box; the opposite sides of the two air suction plates are respectively provided with a plurality of air suction ports.
More preferably, the air suction plates are in right trapezoid structures with narrow left and wide right, opposite sides of the two air suction plates are oblique sides of the right trapezoid, and the air suction ports of the air suction plates gradually approach the conveyor belt from left to right.
More preferably, an arc-shaped heat insulation plate is arranged at the upper part in the reaction box.
More preferably, the device also comprises a nitrogen box, a gas converter and a vent pipe; the mounting frame is fixedly connected with a nitrogen box; the nitrogen box is provided with a plurality of gas converters; the two air suction plates are respectively communicated with an air pipe, the two air pipes are respectively communicated with the air converters at the corresponding sides, and the air filters are arranged in the air converters.
More preferably, the heating cartridge has a front-to-back width that is less than the front-to-back width of the nitrogen box.
More preferably, the device also comprises a turnover system, wherein the turnover system comprises a bearing box, a lifting unit, a supporting plate, a connecting rod, a placing plate, a sponge plate and an electric control door; the lower part of the nitrogen box is fixedly connected with a bearing box; a lifting unit is arranged in the bearing box, and the upper part of the lifting unit is positioned in the nitrogen box; the upper part of the nitrogen box is provided with a discharge hole; the lifting unit is detachably connected with a supporting plate; the supporting plate is fixedly connected with two connecting rods which are distributed front and back; the upper parts of the two connecting rods are fixedly connected with another supporting plate; the two connecting rods are fixedly connected with a plurality of placing plates distributed in a vertical array; the placing plate is in a C-shaped structure from the top down view, and the conveyer belt is positioned in the C-shaped structure; the placement plate is of a transverse U-shaped structure with an opening left from the front to the back; a sponge plate with an opening at the left part is arranged in each U-shaped structure of each placing plate, and the lifting unit is used for driving the supporting plate and the connecting parts thereof to lift; the lower part of the bearing box is movably connected with two electric control doors which are distributed in bilateral symmetry.
More preferably, the epicyclic system further comprises a bellows; the bearing box is provided with two air boxes which are distributed left and right; the opposite surfaces of the two bellows are respectively provided with an air injection groove, and the air injection grooves are obliquely downward.
More preferably, the sponge board is in a V-shaped structure.
More preferably, the device further comprises a protection unit, wherein the protection unit comprises a wind-up roll, a protection film, a first guide roll and a second guide roll; the upper part of the nitrogen box is provided with two winding rollers which are distributed left and right; the two winding rollers are wound with a protective film together, and the protective film has variability; the upper part of the nitrogen box is provided with two first guide rollers which are distributed left and right, and the two first guide rollers are positioned between the two wind-up rollers; the upper part of the nitrogen box is provided with two second guide rollers which are distributed back and forth, and the two second guide rollers are positioned between the two first guide rollers; the first guide roller and the second guide roller are both positioned above the protective film.
More preferably, the sponge plate is provided with protrusions.
Compared with the prior art, the invention has the following advantages: according to the invention, nitrogen at high temperature and high pressure reacts with water drops and water stains on the surface of the silicon crystal in the reaction box, so that the nitrogen can be dissolved in water, the nitrogen can be contacted with the surface of the silicon crystal covered by the water drops, the problems that the nitrogen cannot react with water at normal temperature and normal pressure, the nitrogen cannot be contacted with the surface of the silicon crystal covered by the water drops, the part of the surface of the silicon crystal, which is provided with the water drops, cannot be protected by the nitrogen for the first time, oxygen contained in ionized water can be subjected to oxidation reaction with the silicon crystal, an oxide layer is formed on the surface of the silicon crystal, and the process of the next procedure and the final efficiency of the battery piece are affected are solved; meanwhile, when silicon crystal passes through the reaction box and the heating box, the reaction box and the heating box in a high temperature state can have a drying effect on water drops and water stains on the surface of the silicon crystal, so that oxygen contained in the water drops and the water stains on the surface of the silicon crystal can be prevented from oxidizing with the silicon crystal, nitrogen can react with the water on the basis of drying the water drops, and double guarantee is made for preventing the oxygen in the water drops from oxidizing with the silicon crystal.
According to the invention, the suction force is generated on the water drops on the surface of the silicon crystal by the suction plate, so that the water drops move on the surface of the silicon crystal and are slowly changed into water stains, the contact speed of nitrogen and the surface of the silicon crystal is increased, the drying speed of water on the surface of the silicon crystal is increased, and the working efficiency of water drop drying is greatly improved.
When the suction plate sucks the water drops on the surface of the silicon crystal, the water drops on the surface of the silicon crystal longitudinally move forwards and backwards, so that the water drops longitudinally stretch on the surface of the silicon crystal, the height of the water drops is reduced, the longitudinal length is increased, the water drops are changed into ellipses from hemispheres, the contact area of the water drops and air flow is increased, and the drying speed is increased; the air flow blown from the heating box to the reaction box is a transverse air flow from right to left, so that the air flow not only can play a drying effect on water drops in the middle of the surface of the silicon crystal, but also can suck the water drops sucked by the suction plate and is elliptical, and the water drops are transversely blown, so that the water drops are transversely elongated on the basis of being longitudinally elongated by the suction plate, and then blown out by the heating box, so that the height of the water drops is reduced again, the transverse length of the water drops is increased, the water drops are changed into a rectangle from the ellipse, the contact area of the water drops and the air flow is further increased, and the drying speed is accelerated.
According to the invention, the silicon crystal is clamped and fixed through the narrow right part of the sponge plate, so that the silicon crystal is prevented from shaking.
In the process of placing the silicon crystal into the placing plate and the sponge plate, the silicon crystal is protected by nitrogen, the silicon crystal protected by nitrogen is not contacted with air and cannot be subjected to oxidation reaction with air, and the problems that in the prior art, a certain time is required to be spent in the process of placing the silicon crystal into the flower basket, and in the time period, the silicon crystal in the flower basket and the silicon crystal which is not placed into the flower basket are contacted with air and subjected to oxidation reaction, so that an oxide layer is formed on the surface of the silicon crystal, the protection effect on the silicon crystal is poor, and the silicon crystal is easily polluted by external air are solved.
In the wrapping process, the silicon crystal cannot contact with the outside air; and when the sponge plate and the silicon crystal are wrapped by the protective film, the preservative film formed by the protective film is filled with nitrogen, so that the silicon crystal is protected at any time, and the optimal protective effect is achieved on the silicon crystal.
Drawings
FIG. 1 is a schematic diagram of a first disclosed turnover mechanism for degumming a photovoltaic silicon wafer;
FIG. 2 is a schematic diagram of a second disclosed turnover mechanism for degumming a photovoltaic silicon wafer;
FIG. 3 is a cross-sectional view of a disclosed structure of a turnover mechanism for degumming a photovoltaic silicon wafer;
FIG. 4 is a schematic diagram of the structure of a placement plate and a sponge plate disclosed by the turnover mechanism for degumming a photovoltaic silicon wafer;
FIG. 5 is a schematic diagram of a third disclosed turnover mechanism for degumming a photovoltaic silicon wafer;
FIG. 6 is a schematic diagram of a first part of the structure of the dewatering operation disclosed by the turnover mechanism for degumming the photovoltaic silicon wafer;
FIG. 7 is a schematic diagram of a second partial structure of the water removal operation disclosed by the turnover mechanism for degumming a photovoltaic silicon wafer;
FIG. 8 is a schematic structural view of an insulation board disclosed by a turnover mechanism for degumming a photovoltaic silicon wafer;
fig. 9 is a schematic structural view of a protection unit disclosed by the turnover mechanism for degumming a photovoltaic silicon wafer.
The marks of the components in the drawings are as follows: 1-mounting frame, 2-nitrogen box, 3-conveyer belt, 4-bearing box, 5-guide rail, 6-movable block, 7-supporting plate, 8-supporting plate, 9-connecting rod, 10-placing plate, 11-sponge plate, 12-gas converter, 13-electric control door, 14-bellows, 101-reaction box, 102-heating box, 103-air suction plate, 104-ventilation pipe, 105-heat insulation plate, 201-wind-up roll, 202-protective film, 203-first guide roll, 204-second guide roll, 001-silicon crystal, 2 a-discharge hole and 11 a-convex part.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The turnover mechanism for degumming the photovoltaic silicon wafer comprises a mounting frame 1 and a conveying belt 3 as shown in figures 1-9; the mounting frame 1 is provided with a conveying belt 3;
the reaction box 101, the heating box 102 and the air suction plate 103 are also included; the reaction box 101 is arranged on the mounting frame 1, and the reaction box 101 covers the conveyer belt 3; the mounting frame 1 is provided with a heating box 102, the heating box 102 covers the conveyor belt 3, and the reaction box 101 is communicated with the heating box 102; the heating box 102 is externally connected with nitrogen conveying equipment; two suction plates 103 which are symmetrically distributed in the front-back direction are arranged in the reaction box 101; the opposite sides of the two suction plates 103 are respectively provided with a plurality of suction openings, and the suction openings suck water drops to enable the water drops to move and become water stains.
The air suction plates 103 are in right trapezoid structures with narrow left and wide right, opposite sides of the two air suction plates 103 are oblique sides of the right trapezoid, and air suction ports of the air suction plates 103 are gradually close to the conveyor belt 3 from left to right; when the suction port on the suction plate 103 sucks water drops on the surface of the silicon crystal 001, different suction forces are generated on the water drops on the surface of the silicon crystal 001 through the inclined suction port on the suction plate 103, so that the water drops are in an irregular moving state on the surface of the silicon crystal 001, and when the water drops are prevented from regularly and synchronously moving, a large water drop is formed by a plurality of small water drops, so that the drying difficulty is increased.
An arc-shaped heat preservation plate 105 is arranged at the upper part in the reaction box 101, and the heat preservation plate 105 is used for preserving heat of nitrogen, so that the nitrogen can still keep a high-temperature state when reacting with water drops in the reaction box 101.
The water removal work of the silicon crystal 001 of the invention is as follows:
when the silicon crystal 001 is degummed from the degumping equipment, the surface of the silicon crystal 001 contains ionized water, and the subsequent turnover is convenient after the water is removed; in the process of transferring the silicon crystal 001 by the conveyor belt 3, nitrogen is conveyed into the reaction box 101 through the heating box 102 by controlling nitrogen conveying equipment externally connected with the heating box 102, and when the nitrogen passes through the heating box 102, the nitrogen is heated and pressurized through the heating box 102, so that the nitrogen is converted into a water-soluble high-temperature high-pressure state from a water-slightly-soluble normal-temperature normal-pressure state after passing through the heating box 102; then, the nitrogen gas at high temperature and high pressure can react with the water drops and water stains on the surface of the silicon crystal 001 in the reaction box 101, so that the nitrogen gas can be dissolved in water, the nitrogen gas can be contacted with the surface of the silicon crystal 001 covered by the water drops, the problems that the nitrogen gas cannot react with water at normal temperature and normal pressure, the nitrogen gas cannot be contacted with the surface of the silicon crystal 001 covered by the water drops, the part of the surface of the silicon crystal 001 with the water drops cannot be protected by the nitrogen gas for the first time, and oxygen contained in the ionized water can be subjected to oxidation reaction with the silicon crystal 001 to form an oxide layer on the surface of the silicon crystal 001, and the process of the next procedure and the final efficiency of the battery piece are affected are solved.
Meanwhile, when silicon crystal 001 passes through reaction box 101 and heating box 102, reaction box 101 and heating box 102 in high temperature state can play a drying effect to the drop of water and water stain on silicon crystal 001 surface, avoid oxygen and silicon crystal 001 that contain in its surface drop of water and water stain to take place oxidation reaction, on the basis of drying the drop of water, make nitrogen and water reaction, for avoiding oxygen and silicon crystal 001 in the drop of water to take place oxidation reaction and make dual guarantee.
Meanwhile, the suction plate 103 can generate suction force on the water drops on the surface of the silicon crystal 001, so that the water drops move on the surface of the silicon crystal 001 and are changed into water stains slowly, the contact speed of nitrogen and the surface of the silicon crystal 001 is increased, the drying speed of water on the surface of the silicon crystal 001 is increased, and the working efficiency of water drop drying is greatly improved;
it should be noted that when the suction port on the suction plate 103 sucks the water drops on the surface of the silicon crystal 001, different suction forces are generated on the water drops on the surface of the silicon crystal 001 through the inclined suction port on the suction plate 103, so that the water drops are in an irregular moving state on the surface of the silicon crystal 001, and when the water drops are prevented from regularly and synchronously moving, a plurality of small water drops are converged into one large water drop, so that the drying difficulty is increased.
Example 2
1-5, further comprising a nitrogen tank 2, a gas converter 12 and a vent pipe 104; the mounting frame 1 is connected with a nitrogen box 2 through bolts; the nitrogen tank 2 is provided with at least two gas converters 12; the two air suction plates 103 are respectively communicated with one air pipe 104, the two air pipes 104 are respectively communicated with the air converters 12 on the corresponding sides, the nitrogen sucked out of the air suction plates 103 is conveyed into the air converters 12 through the air pipes 104, and an air filter is arranged inside the air converters 12 and filters air in the nitrogen.
The width of the heating box 102 in the front-rear direction is smaller than that of the nitrogen tank 2, and the flow rate of nitrogen gas is increased when the nitrogen gas enters the heating box 102 from the nitrogen tank 2.
The deep drying work of the invention is as follows:
in the pretreatment process of the silicon crystal 001, only the water drops at the front part and the rear part of the silicon crystal 001 can be sucked through the suction plate 103, and the water drops at the middle part of the silicon crystal 001 can not have strong suction force, so that the drying speed of the water drops at the middle part of the silicon crystal 001 is far lower than that of the front part and the rear part of the silicon crystal 001, the overall drying effect is poor, and the reaction rate of the silicon crystal 001 and nitrogen is influenced;
when the suction plate 103 sucks water drops on the surface of the silicon crystal 001, the redundant nitrogen in the reaction box 101 is also absorbed, the nitrogen absorbed by the suction plate 103 is conveyed to the gas converter 12 through the vent pipe 104, air in the nitrogen is filtered out through the gas converter 12, the nitrogen is input into the nitrogen box 2, the nitrogen is stored in the nitrogen box 2, and the nitrogen flows into the heating box 102 from the nitrogen box 2; in this process, because the width of the heating box 102 in the front-back direction is smaller than the width of the nitrogen box 2 in the front-back direction, when nitrogen flows from the nitrogen box 2 to the heating box 102, the flow speed of nitrogen can be accelerated, so that when nitrogen enters the reaction box 101 from the heating box 102 and contacts with the surface of the silicon crystal 001 on the conveyor belt 3, stronger blowing force can be generated on the water drops in the middle of the surface of the silicon crystal 001, so that the water drops in the middle of the surface of the silicon crystal 001 can quickly move leftwards on the surface of the silicon crystal 001, water stains are generated, and the water drops in the middle of the surface of the silicon crystal 001 can be quickly dried.
Meanwhile, when the water drops on the surface of the silicon crystal 001 are sucked through the suction plate 103, the water drops on the surface of the silicon crystal 001 move longitudinally in the front-back direction, so that the water drops are longitudinally elongated on the surface of the silicon crystal 001, the height of the water drops is reduced, the longitudinal length is increased, the water drops are changed into ellipses from hemispheres, the contact area between the water drops and air flow is increased, and the drying speed is accelerated;
the air flow blown from the heating box 102 to the reaction box 101 is a transverse air flow from right to left, so that the air flow not only can play a drying effect on water drops in the middle of the surface of the silicon crystal 001, but also can suck the water drops sucked by the suction plate 103 and in an elliptical shape, and the water drops are transversely blown, so that the water drops are longitudinally elongated by the suction plate 103, and then blown out by the heating box 102, and are transversely elongated, so that the height of the water drops is reduced again, the transverse length of the water drops is increased, the water drops are changed into a rectangle from an elliptical shape, the contact area of the water drops and the air flow is further increased, and the drying speed is accelerated.
Example 3
On the basis of the embodiment 2, as shown in fig. 1-4 and 9, the device also comprises a turnover system, wherein the turnover system comprises a bearing box 4, a lifting unit, a supporting plate 8, a connecting rod 9, a placing plate 10, a sponge plate 11 and an electric control door 13; the lower part of the nitrogen box 2 is connected with a bearing box 4 through bolts; a lifting unit is arranged in the bearing box 4, and the upper part of the lifting unit is positioned in the nitrogen box 2; a discharge port 2a is arranged at the upper part of the nitrogen box 2; the lifting unit is detachably connected with a supporting plate 8; the supporting plate 8 is connected with two connecting rods 9 which are distributed front and back through bolts; the upper parts of the two connecting rods 9 are connected with another supporting plate 8 through common bolts; the two connecting rods 9 are connected with at least ten placing plates 10 distributed in a vertical array through bolts; the placement plate 10 has a C-shaped structure from the top down view, and the conveyor belt 3 is positioned in the C-shaped structure; the placement plate 10 has a transverse U-shaped structure with an opening to the left from the front to the back; a sponge plate 11 with an opening at the left part is arranged in the U-shaped structure of each placing plate 10; the lower part of the bearing box 4 is hinged with two electric control doors 13 which are distributed symmetrically left and right.
The lifting unit comprises a guide rail 5, a moving block 6 and a supporting plate 7; two guide rails 5 which are distributed front and back are arranged in the bearing box 4; the two guide rails 5 are respectively connected with a moving block 6 in a sliding way; each bolt of the two moving blocks 6 is connected with a supporting plate 7; the two supporting plates 7 are detachably connected with the supporting plate 8.
The turnaround system also comprises a bellows 14; the bearing box 4 is provided with two air boxes 14 distributed left and right; the opposite surfaces of the two bellows 14 are respectively provided with an air injection groove, and the air injection grooves are obliquely downward; when the two electric control doors 13 are rotated to open, conical air flows are sprayed out through air spraying grooves formed in the two air boxes 14, so that air is prevented from entering the bearing box 4 and the nitrogen box 2.
The sponge board 11 is in a V-shaped structure; the silicon crystal 001 can be clamped and fixed through the narrow right part of the sponge plate 11, and is prevented from shaking.
The protective unit comprises a wind-up roll 201, a protective film 202, a first guide roll 203 and a second guide roll 204; the upper part of the nitrogen box 2 is provided with two winding rollers 201 which are distributed left and right; the two wind-up rollers 201 wind up one protective film 202 together, and the protective film 202 has variability; the upper part of the nitrogen box 2 is provided with two first guide rollers 203 which are distributed left and right, and the two first guide rollers 203 are positioned between the two winding rollers 201; the upper part of the nitrogen box 2 is provided with two second guide rollers 204 which are distributed back and forth, and the two second guide rollers 204 are positioned between the two first guide rollers 203; the first guide roller 203 and the second guide roller 204 are both located above the protective film 202.
The sponge sheet 11 is provided with a convex portion 11a; since the corners of the silicon crystal 001 are sharp, the silicon crystal 001 is prevented from slipping out by the limit of the convex portion 11a to the silicon crystal 001, and the corners thereof are prevented from puncturing the protective film 202.
The turnover work of the silicon chip is as follows:
the silicon crystal 001 after being processed by the reaction box 101 and the heating box 102 is conveyed by the conveying belt 3, so that the conveying belt 3 drives the silicon crystal 001 to move towards the inside of the nitrogen box 2;
meanwhile, the electric control door 13 is controlled to rotate and open downwards, the supporting plate 8 is clamped with the supporting plate 7 by a person, the guide rail 5 is controlled to drive the moving block 6 and the supporting plate 7 to move upwards, so that the supporting plate 7 drives the supporting plate 8 and the connecting parts thereof to move upwards, and the opening of the sponge plate 11 at the uppermost layer is opposite to the silicon crystal 001 on the conveyor belt 3; along with the transportation belt 3 drives the silicon crystal 001 to enter the nitrogen box 2, and enter the sponge plate 11 from the opening of the sponge plate 11, the silicon crystal 001 is clamped and fixed through the narrow right part of the sponge plate 11, and shaking is prevented.
After the turnover of the uppermost layer of silicon crystal 001 is completed, the moving block 6 is controlled to drive the supporting plate 7, the supporting plate 8 and the connecting parts thereof to move upwards, so that the opening of the sponge plate 11 of the second layer is opposite to the subsequent silicon crystal 001 on the conveyor belt 3, and the subsequent silicon crystal 001 is driven to enter the nitrogen box 2 through the conveyor belt 3, enters the sponge plate 11 of the second layer from the opening of the sponge plate 11 of the second layer, and then clamps and fixes the silicon crystal 001 through the narrow right part of the sponge plate 11 of the second layer;
thus, the placing plate 10 and the sponge plate 11 are raised layer by layer, and the silicon crystals 001 are also introduced into the sponge plate 11 of each layer one by one, and at this time, the placing plate 10, the sponge plate 11 and the silicon crystals 001 are in the state shown in fig. 4;
it should be noted that, because the placement plate 10 has a C-shaped structure from the top down view, when the silicon crystal 001 needs to be removed from the placement plate 10 and the sponge plate 11, the silicon crystal 001 only needs to be slightly lifted upwards and then taken out outwards, and the silicon crystal 001 is convenient to take out; meanwhile, the sponge plate 11 is made of soft sponge materials, and for thin and fragile silicon crystals 001, the flexible clamping and fixing of the silicon crystals 001 are achieved through the V-shaped structure of the sponge plate 11, shaking is prevented, the silicon crystals 001 can be protected through the sponge materials, and damage of the silicon crystals 001 in the storage process is reduced.
It should be noted that when the two electric control doors 13 are rotated and opened, conical air flows are ejected through the air ejection grooves arranged on the two air boxes 14, so that air is prevented from entering the bearing box 4 and the nitrogen box 2 from the electric control doors 13, and the air and silicon crystal 001 in the nitrogen box 2 are subjected to oxidation reaction, so that the influence on the silicon crystal 001 is caused;
thus, in the process of loading the silicon crystal 001 into the placing plate 10 and the sponge plate 11, the silicon crystal 001 is protected by the nitrogen, the silicon crystal 001 protected by the nitrogen is not contacted with the air and cannot be subjected to oxidation reaction with the air, and the problems that in the prior art, a certain time is required to be spent in the process of placing the silicon crystal 001 in the flower basket, the silicon crystal 001 in the flower basket and the silicon crystal 001 which is not placed in the flower basket are contacted with the air in the time period, oxidation reaction occurs, so that an oxide layer is formed on the surface of the silicon crystal 001, the protection effect on the silicon crystal 001 is poor, and the silicon crystal 001 is easily polluted by the external air are solved.
Before turning over the silicon crystal 001, controlling the left winding roller 201 to release the protective film 202, and controlling the right winding roller 201 to wind up the protective film 202, so that the protective film 202 moves from left to right on the upper surface of the nitrogen box 2, and the protective film 202 covers the discharge port 2a; the protective film 202 is positioned below the first guide roller 203 and the second guide roller 204, and the protective film 202 is limited by the first guide roller 203 and the second guide roller 204, so that the protective film 202 can be tightly attached to the upper surface of the nitrogen box 2, and thus, the discharge port 2a can be plugged, and the outside air is prevented from entering the nitrogen box 2 from the discharge port 2a; subsequently, in the process of moving the placing plate 10 and the sponge plate 11 with the silicon crystal 001 placed thereon upward, the support plate 8 gradually lifts up the protective film 202, but due to the stopper action of the first guide roller 203 and the second guide roller 204, as shown in fig. 9, the protective film 202 is deformed adaptively as the support plate 8 moves upward; when all the sponge plates 11 are exposed out of the discharge hole 2a, the protective film 202 is similar to a preservative film, all the sponge plates 11 are wrapped, then the two support plates 8 are clamped and fixed by an external clamping moving device, then the moving block 6 is controlled to drive the support plates 7 to move downwards so as to separate the support plates 7 from the support plates 8, and then the clamping device drives the two support plates 8 to move upwards so that the lower support plates 8 are higher than the discharge hole 2a; then, the protective film 202 at the lower part of the lower supporting plate 8 is cut off by an external hot cutting device, the protective film 202 at the lower part of the lower supporting plate 8 is contracted together, and the protective film 202 is similar to a preservative film, so that the lower part of the lower supporting plate 8 is wrapped, namely, the supporting plate 8, the connecting rod 9, the placing plate 10 and the sponge plate 11 are fully wrapped, and then, the wrapped supporting plate 8, the connecting rod 9, the placing plate 10, the sponge plate 11 and the silicon crystal 001 can be stored or transferred to the next procedure.
In the process of wrapping, the silicon crystal 001 cannot be contacted with the outside air; when the sponge plate 11 and the silicon crystal 001 are covered with the protective film 202, the "preservative film" formed by the protective film 202 is filled with nitrogen gas, thereby protecting the silicon crystal 001 at all times and achieving the best protection effect on the silicon crystal 001.
It should be noted that, because the edge of the silicon crystal 001 is sharp, when the protective film 202 wraps the sponge plate 11 and the silicon crystal 001, if the silicon crystal 001 shakes, the sharp edge of the silicon crystal 001 will puncture the protective film 202, so that air enters into the protective film 202 to perform oxidation reaction with the silicon crystal 001 wrapped by the protective film 202; therefore, when the silicon crystal 001 enters the sponge plate 11, the silicon crystal 001 is limited by the convex part 11a, so that the silicon crystal 001 is prevented from sliding out, and the problem that when the protective film 202 wraps the sponge plate 11 and the silicon crystal 001, if the silicon crystal 001 shakes, the sharp corners of the silicon crystal 001 can puncture the protective film 202, so that air enters the protective film 202 and the silicon crystal 001 wrapped by the protective film 202 is oxidized is solved.
While the present disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. The scope of the disclosure should, therefore, not be limited to the above-described embodiments, but should be determined not only by the following claims, but also by the equivalents of the following claims.
Claims (5)
1. The turnover mechanism for degumming the photovoltaic silicon wafer comprises a mounting rack (1) and a conveying belt (3); the mounting frame (1) is provided with a conveyer belt (3); the method is characterized in that: the device also comprises a reaction box (101), a heating box (102) and an air suction plate (103); the reaction box (101) is arranged on the mounting frame (1), and the reaction box (101) covers the conveyer belt (3); the mounting frame (1) is provided with a heating box (102), the heating box (102) covers the conveyor belt (3), and the reaction box (101) is communicated with the heating box (102); the heating box (102) is externally connected with nitrogen conveying equipment; two suction plates (103) which are symmetrically distributed in the front-back direction are arranged in the reaction box (101); a plurality of air inlets are respectively arranged on the opposite sides of the two air suction plates (103);
the air suction plates (103) are of right trapezoid structures with narrow left and wide right, opposite sides of the two air suction plates (103) are oblique sides of the right trapezoid, and air suction ports of the air suction plates (103) are gradually close to the conveying belt (3) from left to right;
the device also comprises a nitrogen box (2), a gas converter (12) and a vent pipe (104); the mounting frame (1) is fixedly connected with a nitrogen box (2); the nitrogen box (2) is provided with a plurality of gas converters (12); the two air suction plates (103) are respectively communicated with an air pipe (104), the two air pipes (104) are respectively communicated with the air converters (12) at the corresponding sides, and an air filter is arranged in each air converter (12);
the turnover system comprises a bearing box (4), a lifting unit, a supporting plate (8), a connecting rod (9), a placing plate (10), a sponge plate (11) and an electric control door (13); the lower part of the nitrogen box (2) is fixedly connected with a bearing box (4); a lifting unit is arranged in the bearing box (4), and the upper part of the lifting unit is positioned in the nitrogen box (2); a discharge hole (2 a) is arranged at the upper part of the nitrogen box (2); the lifting unit is detachably connected with a supporting plate (8); the supporting plate (8) is fixedly connected with two connecting rods (9) which are distributed front and back; the upper parts of the two connecting rods (9) are fixedly connected with another supporting plate (8) together; the two connecting rods (9) are fixedly connected with a plurality of placing plates (10) which are distributed in a vertical array; the placing plate (10) is in a C-shaped structure from the top down view, and the conveying belt (3) is positioned in the C-shaped structure; the placement plate (10) is of a transverse U-shaped structure with an opening leftwards from a front-to-back view; a sponge plate (11) with an opening at the left part is arranged in each U-shaped structure of each placing plate (10), and the lifting unit is used for driving the supporting plate (8) and the connecting parts thereof to lift; the lower part of the bearing box (4) is movably connected with two electric control doors (13) which are symmetrically distributed left and right;
the turnover system also comprises a bellows (14); the bearing box (4) is provided with two air boxes (14) which are distributed left and right; the opposite surfaces of the two bellows (14) are respectively provided with an air injection groove, and the air injection grooves are obliquely downward;
the protective unit comprises a winding roller (201), a protective film (202), a first guide roller (203) and a second guide roller (204); the upper part of the nitrogen box (2) is provided with two winding rollers (201) which are distributed left and right; the two winding rollers (201) are wound with a protective film (202) together, and the protective film (202) has variability; the upper part of the nitrogen box (2) is provided with two first guide rollers (203) which are distributed left and right, and the two first guide rollers (203) are positioned between the two winding rollers (201); the upper part of the nitrogen box (2) is provided with two second guide rollers (204) which are distributed back and forth, and the two second guide rollers (204) are positioned between the two first guide rollers (203); the first guide roller (203) and the second guide roller (204) are both positioned above the protective film (202).
2. The turnover mechanism for degumming a photovoltaic silicon wafer according to claim 1, which is characterized in that: an arc-shaped heat insulation plate (105) is arranged at the inner upper part of the reaction box (101).
3. The turnover mechanism for degumming a photovoltaic silicon wafer according to claim 1, which is characterized in that: the front-back direction width of the heating box (102) is smaller than the front-back direction width of the nitrogen box (2).
4. The turnover mechanism for degumming a photovoltaic silicon wafer according to claim 1, which is characterized in that: the sponge board (11) is in a V-shaped structure.
5. The turnover mechanism for degumming a photovoltaic silicon wafer according to claim 1, which is characterized in that: the sponge plate (11) is provided with a convex part (11 a).
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| CN202310921426.XA CN116646291B (en) | 2023-07-26 | 2023-07-26 | Turnover mechanism for degumming photovoltaic silicon wafer |
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| CN116646291B true CN116646291B (en) | 2023-10-24 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN111403327A (en) * | 2020-03-28 | 2020-07-10 | 苏州赛森电子科技有限公司 | Silicon wafer conveying equipment on sputtering platform and using method |
| CN112460971A (en) * | 2020-11-30 | 2021-03-09 | 苏州晟成光伏设备有限公司 | Silicon wafer drying device and method |
| CN114777434A (en) * | 2022-05-12 | 2022-07-22 | 武汉芯致半导体有限公司 | Drying treatment device for cleaning silicon wafer and treatment method thereof |
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2023
- 2023-07-26 CN CN202310921426.XA patent/CN116646291B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN111403327A (en) * | 2020-03-28 | 2020-07-10 | 苏州赛森电子科技有限公司 | Silicon wafer conveying equipment on sputtering platform and using method |
| CN112460971A (en) * | 2020-11-30 | 2021-03-09 | 苏州晟成光伏设备有限公司 | Silicon wafer drying device and method |
| CN114777434A (en) * | 2022-05-12 | 2022-07-22 | 武汉芯致半导体有限公司 | Drying treatment device for cleaning silicon wafer and treatment method thereof |
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Address after: 214000 61-2 Wan'an Road, Yunlin, Xishan District, Wuxi City, Jiangsu Province Applicant after: WUXI ELVIS TECHNOLOGY Co.,Ltd. Address before: No. 1, Financial 8th Street, Economic Development Zone, Wuxi City, Jiangsu Province, 214111 Applicant before: WUXI ELVIS TECHNOLOGY Co.,Ltd. |
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