CN116632138A - Deep ultraviolet LED epitaxial wafer, epitaxial growth method and LED chip - Google Patents

Deep ultraviolet LED epitaxial wafer, epitaxial growth method and LED chip Download PDF

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Publication number
CN116632138A
CN116632138A CN202310906428.1A CN202310906428A CN116632138A CN 116632138 A CN116632138 A CN 116632138A CN 202310906428 A CN202310906428 A CN 202310906428A CN 116632138 A CN116632138 A CN 116632138A
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layer
hole conducting
doped
conducting layer
deep ultraviolet
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霍丽艳
滕龙
吴洪浩
崔晓慧
刘兆
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Jiangxi Qianzhao Photoelectric Co ltd
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Jiangxi Qianzhao Photoelectric Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention provides a deep ultraviolet LED epitaxial wafer, an epitaxial growth method and an LED chip, which are characterized in that a hole conducting layer formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers is arranged, and alkaline earth metal elements Mg, ca, zn, sr are introduced into the hole conducting layer to dope the two-dimensional AlN sublayers, so that P doping is realized, holes are provided, meanwhile, due to the introduction of magnetic particles, a shallow acceptor impurity level can be introduced into an AlN structure, and due to the introduction of the shallow acceptor impurity level, hole ionization and conduction are facilitated, so that the luminous efficiency of the deep ultraviolet LED is improved.

Description

Deep ultraviolet LED epitaxial wafer, epitaxial growth method and LED chip
Technical Field
The invention relates to the technical field of LEDs, in particular to a deep ultraviolet LED epitaxial wafer, an epitaxial growth method and an LED chip.
Background
The light emitting diode (Light Emitting Diode, simply referred to as LED) is a semiconductor electronic device capable of emitting light, and attracts more and more researchers' attention due to its small size, high brightness, low power consumption, and the like.
In recent years, alGaN-based deep ultraviolet light emitting diodes have been widely used, for example, in air and water purification, surface sterilization, ultraviolet curing, medical phototherapy, and the like. The ultraviolet band can be generally divided into long-wave ultraviolet UVA (320 nm-400 nm), medium-wave ultraviolet UVB (280 nm-320 nm), short-wave ultraviolet UVC (200 nm-280 nm) and vacuum ultraviolet (10 nm-200 nm) according to wavelength, and for AlGaN-based materials, the shorter the wavelength, the higher the Al component, so that high-quality material epitaxy and effective doping face higher and higher challenges. Although the light output power of deep ultraviolet LEDs has been greatly improved, alGaN-based deep ultraviolet LEDs still have a bottleneck problem of low external quantum efficiency and light emitting power.
Firstly, high Al component AlGaN material and the sapphire substrate have larger lattice mismatch and thermal mismatch, so that AlGaN can generate larger dislocation density when epitaxially growing on the sapphire substrate to form a serious non-radiative recombination center, and secondly, spontaneous and piezoelectric polarization charges induced at the heterojunction interface of the active layer of III-group nitride enable the quantum well energy band to incline, thereby weakening the overlapping of electron and hole wave functions and further reducing the radiative recombination rate. In addition, electron spills caused by imbalance between cavity and electron injection in deep ultraviolet LEDs are also considered to be important factors for lower internal quantum efficiency.
Specifically, the deep ultraviolet gradually becomes shorter along with the wavelength, and the Al component of the quantum well gradually increases, that is, the Al component of the electron blocking layer gradually increases, so that the electron blocking layer effectively blocks electrons, prevents electrons from overflowing and simultaneously has adverse effects on hole injection. The physical reason is that in the electron blocking layer of the AlGaN or AlN material, the acceptor impurity energy level is deeper than that of GaN, and the forbidden bandwidth of the AlGaN material is increased along with the increase of the Al component, the acceptor energy level is continuously deepened, the activation energy is continuously increased, and the hole carrier activation efficiency and concentration are reduced, so that the electron injection efficiency and the luminous efficiency of the deep ultraviolet light emitting diode are reduced.
Disclosure of Invention
Based on the above, the invention aims to provide a deep ultraviolet LED epitaxial wafer, an epitaxial growth method and an LED chip, and aims to solve the problem of low luminous efficiency caused by the influence of hole injection due to higher Al component of a quantum well in an AlGaN-based deep ultraviolet light emitting diode in the prior art.
According to the embodiment of the invention, the deep ultraviolet LED epitaxial wafer comprises a hole conducting layer, wherein the hole conducting layer is formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, wherein part of the AlN sublayers are doped with alkaline earth metal elements, and the alkaline earth metal elements are any one or a combination of a plurality of Mg, ca, zn, sr.
Further, the deep ultraviolet LED epitaxial wafer further comprises a substrate, an AlGaN buffer layer, undoped AlGaN, an N-type AlGaN layer, a multiple quantum well layer, a P-type AlGaN layer and a P-type contact layer;
the AlGaN buffer layer, the undoped AlGaN layer, the N-type AlGaN layer, the multiple quantum well layer, the hole conducting layer, the P-type AlGaN layer and the P-type contact layer are sequentially epitaxially grown on the substrate.
Further, the hole conducting layer is a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer doped with an alkaline earth metal element, wherein any one or a combination of a plurality of types of Mg, ca, zn, sr are doped in the AlN sub-layer doped with the alkaline earth metal element.
Further, the hole conducting layer is a composite structure formed by periodically and alternately growing any two layers, three layers, four layers or five layers of undoped AlN sublayers, mg-doped AlN sublayers, ca-doped AlN sublayers, zn-doped AlN sublayers and Sr-doped AlN sublayers.
Further, doping of the alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer is performed under a nitrogen-rich condition, and the molar ratio of the V group element to the III group element is more than 20000.
Further, the doping concentration of the alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer is 0.01% -0.5%.
Further, the growth temperature of the hole conducting layer is 800-1100 ℃.
According to an embodiment of the invention, an epitaxial growth method of an LED epitaxial wafer is used for preparing the deep ultraviolet LED epitaxial wafer, and comprises the following steps: and growing a hole conducting layer, wherein the hole conducting layer is formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, wherein part of the AlN sublayers are doped with alkaline earth metal elements in the hole conducting layer, and the alkaline earth metal elements are any one or a combination of a plurality of Mg, ca, zn, sr.
Further, the epitaxial growth method further comprises:
providing a substrate required for growth;
and sequentially epitaxially growing an AlGaN buffer layer, undoped AlGaN, an N-type AlGaN layer, a multiple quantum well layer, the hole conducting layer, a P-type AlGaN layer and a P-type contact layer on the substrate.
According to the embodiment of the invention, the LED chip comprises the deep ultraviolet LED epitaxial wafer.
Compared with the prior art: according to the deep ultraviolet LED epitaxial wafer, the hole conducting layer formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers is arranged, and alkaline earth metal element Mg, ca, zn, sr doping is introduced into the hole conducting layer, so that the P doping of the two-dimensional AlN sublayers is realized, holes are provided, meanwhile, due to the introduction of magnetic particles, a shallow acceptor impurity level can be introduced into an AlN structure, and due to the introduction of the shallow acceptor impurity level, the ionization and conduction of the holes are facilitated, so that the luminous efficiency of the deep ultraviolet LED is improved.
Drawings
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a flowchart of an implementation of an epitaxial growth method of an LED epitaxial wafer according to an embodiment of the present invention.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a schematic structural diagram of a deep ultraviolet LED epitaxial wafer according to an embodiment of the present invention is provided, where the deep ultraviolet LED epitaxial wafer includes a substrate 1, and an AlGaN buffer layer 2, an undoped AlGaN layer 3, an N-type AlGaN layer 4, a multiple quantum well layer 5, a hole conduction layer 6, a P-type AlGaN layer 7, and a P-type contact layer 8 sequentially disposed on the substrate 1.
The hole conducting layer 6 in the deep ultraviolet LED epitaxial wafer is formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, and specifically, part of the AlN sublayers in the hole conducting layer 6 are doped with alkaline earth metal elements, wherein the alkaline earth metal elements are any one or a combination of a plurality of Mg, ca, zn, sr. It should be noted that, since the bond length of Mg, ca, zn, sr atoms and N is longer than that of al—n bond length, the elongation of bond length helps to reduce electrostatic repulsive potential, so that the doping system is always lower and easier to dope, and in addition, mg, ca, zn, sr has no damage to the planar structure of the system because the ionic radius is not too large compared with that of Al; because the electronegativity of Mg, ca, zn, sr atoms is closer to that of Al atoms than N atoms, in an N-rich environment, impurity atoms are easier to replace Al atoms and are doped into a single layer, and because Mg, ca, zn, sr atoms have only two valence electrons and one less than three valence electrons of Al atoms, the introduction of each Mg, ca, zn, sr atom brings a hole to the system, and a shallow acceptor impurity level is introduced into the band gap of the system, so that the ionization of the hole is facilitated; finally, each substitutional atom introduces a Bohr magnon, at this time, the material shows magnetism, and a spin polarized shallow acceptor level is introduced in the forbidden band of the system, and the energy level is just at the Fermi level, so that the system is semi-metallic, the conductivity is greatly improved, and the conduction of holes is improved.
In an embodiment of the present invention, the number of periods for alternately growing the two-dimensional AlN sublayers in the hole-conducting layer 6 provided in the present invention may be 2 to 100, which is not particularly limited.
In an embodiment of the present invention, the hole conducting layer 6 is a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer doped with an alkaline earth metal element, wherein any one or a combination of several of the AlN sub-layers doped with the alkaline earth metal element are doped with Mg, ca, zn, sr. It can be appreciated that the hole conducting layer 6 may be a composite structure formed by periodically alternately growing undoped AlN sublayers and Mg-doped AlN sublayers; the hole conducting layer 6 may be a composite structure formed by periodically alternately growing an undoped AlN sub-layer and a Ca-doped AlN sub-layer; the hole conducting layer 6 can be a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and a Zn-doped AlN sub-layer; hole conduction layer 6 may be a composite structure in which undoped AlN sublayers and Sr-doped AlN sublayers are grown periodically alternately.
Illustratively, the hole conducting layer 6 may also be a composite structure formed by periodically alternately growing an undoped AlN sub-layer and an Mg/Ca doped AlN sub-layer; the hole conducting layer 6 can also be a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer simultaneously doped with Mg/Zn; the hole conducting layer 6 can also be a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer simultaneously doped with Mg/Sr; the hole conducting layer 6 can also be a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer simultaneously doped with Ca/Zn; the hole conducting layer 6 can also be a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer simultaneously doped with Ca/Sr; hole conduction layer 6 may also be a composite structure formed by periodically alternately growing an undoped AlN sub-layer and an AlN sub-layer doped with Zn/Sr simultaneously.
Illustratively, the hole conducting layer 6 may also be a composite structure formed by periodically alternately growing an undoped AlN sub-layer and an AlN sub-layer doped with Mg/Ca/Zn simultaneously; the hole conducting layer 6 may also be a composite structure formed by periodically alternately growing an undoped AlN sub-layer and an AlN sub-layer doped with Mg/Ca/Sr simultaneously; the hole conducting layer 6 can also be a composite structure formed by periodically and alternately growing an undoped AlN sub-layer and an AlN sub-layer simultaneously doped with Ca/Zn/Sr; hole conduction layer 6 may also be a composite structure formed by periodically alternately growing an undoped AlN sub-layer and an AlN sub-layer doped with Mg/Zn/Sr simultaneously.
In an embodiment of the present invention, the hole conducting layer 6 is a composite structure formed by periodically and alternately growing any two, three, four or five layers of undoped AlN sublayers, mg-doped AlN sublayers, ca-doped AlN sublayers, zn-doped AlN sublayers and Sr-doped AlN sublayers. Illustratively, the hole conducting layer 6 may be a composite structure formed by periodically alternately growing an undoped AlN sub-layer, an Mg-doped AlN sub-layer, and a Ca-doped AlN sub-layer; the hole conduction layer 6 may be a composite structure formed by periodically alternately growing an undoped AlN sub-layer, an Mg-doped AlN sub-layer, an Ca-doped AlN sub-layer, a Zn-doped AlN sub-layer, and an Sr-doped AlN sub-layer, etc., and the above examples are not limiting to the present invention, and the AlN sub-layers may be combined in any order.
In one embodiment of the present invention, the doping of alkaline earth metal element Mg, ca, zn, sr in hole conducting layer 6 is performed under nitrogen-rich conditions, and the molar ratio of group v element to group iii element is greater than 20000.
In one embodiment of the present invention, the doping concentration of the alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer 6 is 0.01% -0.5%.
In one embodiment of the present invention, the growth temperature of the hole conduction layer 6 is 800 ℃ to 1100 ℃.
Correspondingly, the embodiment of the invention also provides an epitaxial growth method of the LED epitaxial wafer, which is used for preparing the deep ultraviolet LED epitaxial wafer, and referring to fig. 2, a flowchart for realizing the epitaxial growth method of the LED epitaxial wafer provided by the embodiment of the invention specifically comprises the following steps:
s1, providing a substrate.
S2, growing an AlGaN buffer layer on the substrate.
S3, growing an undoped AlGaN layer on one side, away from the substrate, of the AlGaN buffer layer.
S4, growing an N-type AlGaN layer on one side of the undoped AlGaN layer, which is away from the substrate.
And S5, growing a multi-quantum well layer on one side of the N-type AlGaN layer, which is away from the substrate.
And S6, growing a hole conducting layer on one side of the multi-quantum well layer away from the substrate.
And S7, growing a P-type AlGaN layer on one side of the hole conducting layer, which is away from the substrate.
S8, growing a P-type contact layer on one side of the P-type AlGaN layer, which is away from the substrate.
In one embodiment of the present invention, the number of the repeating units provided in the present invention may be 2 to 100, and the present invention is not particularly limited.
It can be understood that the hole conducting layer manufactured by the technical scheme provided by the embodiment of the invention is formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, wherein part of the AlN sublayers in the hole conducting layer are doped with alkaline earth metal elements, and the alkaline earth metal elements are any one or a combination of a plurality of Mg, ca, zn, sr.
The method for growing the deep ultraviolet LED epitaxial structure provided by the embodiment of the invention is described in more detail below. The method for growing the deep ultraviolet LED epitaxial structure provided by the embodiment of the invention comprises the following steps:
s1, providing a substrate.
In an embodiment of the present invention, the substrate provided by the present invention may be a sapphire substrate, where an MOCVD machine is used to perform epitaxial growth on a c-plane of the sapphire substrate.
S2, growing an AlGaN buffer layer on the substrate.
In one embodiment of the present invention, when AlGaN buffer layer is grown, the MO source is TMGa, TMAL, and the gas source is NH 3 And H is 2 As a carrier gas.
S3, growing an undoped AlGaN layer on one side, away from the substrate, of the AlGaN buffer layer.
In one embodiment of the present invention, when the undoped AlGaN layer is grown, the MO source is TMGa, TMAL, and the gas source is NH 3 And H is 2 As a carrier gas.
S4, growing an N-type AlGaN layer on one side of the undoped AlGaN layer, which is away from the substrate.
And S5, growing a multi-quantum well layer on one side of the N-type AlGaN layer, which is away from the substrate.
In an embodiment of the present invention, the multiple quantum well layer provided by the present invention may be Al x Ga (1-x) N layer/Al y Ga (1-y) N-layer multiple quantum well structure, al x Ga (1-x) The N layer is a quantum well, al y Ga (1-y) N is a quantum barrier layer, 0<x<y<1。
Optionally, the embodiment of the invention grows Al x Ga (1-x) N layer/Al y Ga (1-y) When the multi-quantum well structure of the N layer is adopted, the MO source is TMGa, TMAL and the gas source is NH 3 And H is 2 As a carrier gas.
And S6, growing a hole conducting layer on one side of the multi-quantum well layer away from the substrate.
In an embodiment of the present invention, the hole conducting layer provided by the present invention may be a hole conducting layer formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, where part of the AlN sublayers in the hole conducting layer is doped with an alkaline earth metal element, and the alkaline earth metal element is any one or a combination of several of Mg, ca, zn, sr.
Specifically, doping of alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer is performed under nitrogen-rich conditions, the molar ratio of the V group element to the III group element is larger than 20000, the doping concentration of alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer is 0.01% -0.5%, and the growth temperature of the hole conducting layer is 800 ℃ -1100 ℃.
And S7, growing a P-type AlGaN layer on one side of the hole conducting layer, which is away from the substrate.
In an embodiment of the present invention, the P-type AlGaN layer provided by the present invention may be grown using an MO source TMGa, TMAl, cp 2 Mg, gas source is NH 3 And H is 2 As a carrier gas.
S8, growing a P-type contact layer on one side of the P-type AlGaN layer, which is away from the substrate.
In an embodiment of the present invention, the P-type contact layer provided by the present invention may be a P-type AlGaN contact layer, and the MO source may be TMGa, TMAl, cp when the P-type AlGaN contact layer grows 2 Mg, gas source is NH 3 And H is 2 As a carrier gas.
The invention is further illustrated by the following examples:
example 1
The epitaxial growth method of the LED epitaxial wafer in the embodiment 1 comprises the following steps:
(1) A substrate is provided.
In an embodiment of the present invention, the substrate provided by the present invention may be a sapphire substrate, where an MOCVD machine is used to perform epitaxial growth on a c-plane of the sapphire substrate.
(2) And growing an AlGaN buffer layer on the substrate.
In one embodiment of the present invention, when AlGaN buffer layer is grown, the MO source is TMGa, TMAL, and the gas source is NH 3 And H is 2 As a carrier gas.
(3) And growing an undoped AlGaN layer on one side of the AlGaN buffer layer, which is away from the substrate.
In one embodiment of the present invention, when the undoped AlGaN layer is grown, the MO source used is TMGa, TMAL, gasThe source being NH 3 And H is 2 As a carrier gas.
(4) And growing an N-type AlGaN layer on one side of the undoped AlGaN layer, which is away from the substrate.
(5) And growing a multi-quantum well layer on one side of the N-type AlGaN layer, which is away from the substrate.
In an embodiment of the present invention, the multiple quantum well layer provided by the present invention may be Al x Ga (1-x) N layer/Al y Ga (1-y) N-layer multiple quantum well structure, al x Ga (1-x) The N layer is a quantum well, al y Ga (1-y) N is a quantum barrier layer, 0<x<y<1。
Optionally, the embodiment of the invention grows Al x Ga (1-x) N layer/Al y Ga (1-y) When the multi-quantum well structure of the N layer is adopted, the MO source is TMGa, TMAL and the gas source is NH 3 And H is 2 As a carrier gas.
(6) And growing a hole conducting layer on one side of the multi-quantum well layer away from the substrate.
Specifically, firstly, a layer of two-dimensional AlN sub-layer doped with Mg grows on one side of the multi-quantum well layer, which is away from the substrate, and then a layer of two-dimensional AlN sub-layer doped with Zn grows on one side of the two-dimensional AlN sub-layer doped with Mg, which is away from the substrate, and the growth process is a period (cycle) which is 10 periods in symbiosis.
(7) And growing a P-type AlGaN layer on one side of the hole conducting layer, which is away from the substrate.
In an embodiment of the present invention, the P-type AlGaN layer provided by the present invention may be grown by MO source TMGa, TMAl, cp Mg and gas source NH 3 And H is 2 As a carrier gas.
(8) And growing a P-type contact layer on one side of the P-type AlGaN layer, which is away from the substrate.
In an embodiment of the present invention, the P-type contact layer provided by the present invention may be a P-type AlGaN contact layer, and the MO source may be TMGa, TMAl, cp when the P-type AlGaN contact layer grows 2 Mg, gas source is NH 3 And H is 2 As a carrier gas.
Example 2
In step (6), an undoped two-dimensional AlN sub-layer is grown on the side of the multiple quantum well layer facing away from the substrate, and then an Mg-doped two-dimensional AlN sub-layer is grown on the side of the undoped two-dimensional AlN sub-layer facing away from the substrate, wherein the growth process is one cycle (cycle) and is symbiotic for 10 cycles.
Example 3
In step (6), an undoped two-dimensional AlN sub-layer is grown on the side of the multiple quantum well layer facing away from the substrate, and then a two-dimensional AlN sub-layer doped with Zn/Mg is grown on the side of the undoped two-dimensional AlN sub-layer facing away from the substrate, and the growth process is one cycle (cycle) and is symbiotic for 10 cycles.
Example 4
The same embodiment 4 provides an epitaxial growth method of an LED epitaxial wafer, which is different from embodiment 1 in that in step (6), firstly, an undoped two-dimensional AlN sub-layer is grown on a side of the multiple quantum well layer, which is away from the substrate, then, an undoped two-dimensional AlN sub-layer is grown on a side of the undoped two-dimensional AlN sub-layer, which is away from the substrate, a Mg-doped two-dimensional AlN sub-layer is grown, and finally, a Zn-doped two-dimensional AlN sub-layer is grown on a side of the Mg-doped two-dimensional AlN sub-layer, which is away from the substrate, and the growth process is a period (cycle) and is symbiotic for 10 periods.
Example 5
In step (6), an undoped two-dimensional AlN sub-layer is grown on the side of the multiple quantum well layer facing away from the substrate, and then a Ca-doped two-dimensional AlN sub-layer is grown on the side of the undoped two-dimensional AlN sub-layer facing away from the substrate, and the growth process is one cycle (cycle) for 10 symbiosis periods.
Example 6
In step (6), an undoped two-dimensional AlN sub-layer is grown on a side of the multiple quantum well layer facing away from the substrate, and then an Sr-doped two-dimensional AlN sub-layer is grown on a side of the undoped two-dimensional AlN sub-layer facing away from the substrate, wherein the growth process is one cycle (cycle) and is symbiotic for 10 cycles.
The LED chips finally prepared in examples 1 to 6 were subjected to light efficiency test under the same conditions as those of the LED chips in the prior art, and the results are shown in the following table:
it can be seen from the table that when a single period in the hole conduction layer consists of a Mg-doped two-dimensional AlN sub-layer and a Zn-doped two-dimensional AlN sub-layer, the improvement in light efficiency is highest, 2% compared with the prior art, and that other combinations are improved to a different extent compared with the prior art.
The embodiment of the invention also provides an LED chip, which comprises the deep ultraviolet LED epitaxial wafer in any embodiment.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1. The deep ultraviolet LED epitaxial wafer is characterized by comprising a hole conducting layer, wherein the hole conducting layer is formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, wherein part of the AlN sublayers are doped with alkaline earth metal elements in the hole conducting layer, and the alkaline earth metal elements are any one or a combination of a plurality of Mg, ca, zn, sr.
2. The deep ultraviolet LED epitaxial wafer of claim 1, further comprising a substrate, an AlGaN buffer layer, undoped AlGaN, an N-type AlGaN layer, a multiple quantum well layer, a P-type AlGaN layer, and a P-type contact layer;
the AlGaN buffer layer, the undoped AlGaN layer, the N-type AlGaN layer, the multiple quantum well layer, the hole conducting layer, the P-type AlGaN layer and the P-type contact layer are sequentially epitaxially grown on the substrate.
3. The deep ultraviolet LED epitaxial wafer of claim 1 or 2, wherein the hole conducting layer is a composite structure formed by periodically and alternately growing undoped AlN sublayers and AlN sublayers doped with alkaline earth metal elements, wherein any one or a combination of a plurality of types of the AlN sublayers doped with alkaline earth metal elements are doped with Mg, ca, zn, sr.
4. The deep ultraviolet LED epitaxial wafer of claim 1 or 2, wherein the hole conducting layer is a composite structure formed by periodically and alternately growing any two layers, three layers, four layers or five layers of undoped AlN sublayers, mg-doped AlN sublayers, ca-doped AlN sublayers, zn-doped AlN sublayers and Sr-doped AlN sublayers.
5. The deep ultraviolet LED epitaxial wafer of claim 1 or 2, wherein the doping of alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer is performed under nitrogen-rich conditions, and the molar ratio of group v element to group iii element is greater than 20000.
6. The deep ultraviolet LED epitaxial wafer of claim 1 or 2, wherein the doping concentration of alkaline earth metal element Mg, ca, zn, sr in the hole conducting layer is 0.01% -0.5%.
7. The deep ultraviolet LED epitaxial wafer of claim 1 or 2, wherein the growth temperature of the hole conducting layer is 800 ℃ to 1100 ℃.
8. An epitaxial growth method of an LED epitaxial wafer, characterized in that it is used for preparing the deep ultraviolet LED epitaxial wafer according to any one of claims 1 to 7, and comprises:
and growing a hole conducting layer, wherein the hole conducting layer is formed by periodically and alternately growing a plurality of two-dimensional AlN sublayers, wherein part of the AlN sublayers are doped with alkaline earth metal elements in the hole conducting layer, and the alkaline earth metal elements are any one or a combination of a plurality of Mg, ca, zn, sr.
9. The method of epitaxial growth of an LED epitaxial wafer of claim 8, further comprising:
providing a substrate required for growth;
and sequentially epitaxially growing an AlGaN buffer layer, undoped AlGaN, an N-type AlGaN layer, a multiple quantum well layer, the hole conducting layer, a P-type AlGaN layer and a P-type contact layer on the substrate.
10. An LED chip comprising the deep ultraviolet LED epitaxial wafer of any one of claims 1-7.
CN202310906428.1A 2023-07-24 2023-07-24 Deep ultraviolet LED epitaxial wafer, epitaxial growth method and LED chip Pending CN116632138A (en)

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