CN116613130A - Lead frame and manufacturing method thereof, semiconductor packaging structure and manufacturing method thereof - Google Patents
Lead frame and manufacturing method thereof, semiconductor packaging structure and manufacturing method thereof Download PDFInfo
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- CN116613130A CN116613130A CN202310569794.2A CN202310569794A CN116613130A CN 116613130 A CN116613130 A CN 116613130A CN 202310569794 A CN202310569794 A CN 202310569794A CN 116613130 A CN116613130 A CN 116613130A
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- pins
- lead frame
- base island
- insulating structure
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000004806 packaging method and process Methods 0.000 title abstract description 11
- 238000009413 insulation Methods 0.000 claims abstract description 41
- 239000003292 glue Substances 0.000 claims description 22
- 239000005022 packaging material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 238000001746 injection moulding Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49586—Insulating layers on lead frames
Abstract
The invention provides a lead frame and a manufacturing method thereof, a semiconductor packaging structure and a manufacturing method thereof. The lead frame comprises a frame body and an insulating structure. The frame body is provided with a base island and a plurality of pins which are distributed at intervals along the periphery of the base island, wherein the pins are provided with a first end close to the base island, a second end far away from the base island and a limiting part positioned between the first end and the second end; the insulation structure is arranged on the pins and is connected with the adjacent pins, and the limiting part is at least partially inlaid in the insulation structure, so that the adjacent pins are kept within a preset interval distance through the insulation structure, namely, the insulation structure can provide support for the slender pins and the adjacent pins, so that the pins are not easy to deform after being subjected to external force, and the yield is improved.
Description
Technical Field
The present invention relates to the field of semiconductor packaging technology, and in particular, to a lead frame and a manufacturing method thereof, a semiconductor packaging structure and a manufacturing method thereof.
Background
Lead frames are commonly used in packaging and electrical connection settings for chips, having a chip mount and a plurality of pins located outside the chip mount. Among them, QFP is a square flat package technology (Quad Flat Package) that uses a lead frame with a small distance between leads, and the leads are relatively slender, and such a package form is often used in a large-scale or very large-scale integrated circuit.
Referring to fig. 1, a conventional QFP lead frame is shown, and it can be seen that the lead frame 100 'has a base island 11' at a central position and a plurality of leads 12 'surrounding the base island 11'. The submount is used primarily for mounting a chip (not shown) that provides mechanical support and heat dissipation for the chip during packaging, and a plurality of pins 12' are used to connect the chip to electrical pathways outside the package. Wherein one end of the pin is connected to a pad on the chip by a lead, and the other end of the pin provides mechanical and electrical connection to the printed circuit board. As shown in fig. 1, the leads 12' are generally long and narrow, and are easily deformed by external force, and the leads 12' are easily swayed when bonding wires are used to connect the chip and the leads 12', which affects the quality of the semiconductor package.
Disclosure of Invention
The invention aims to provide a lead frame and a manufacturing method thereof, and a semiconductor packaging structure with the lead frame and a manufacturing method thereof, so as to solve the problems that the existing pins are easy to deform by external force and shake during wire bonding.
In order to solve the above problems, the present invention provides a lead frame comprising: the frame body is provided with a base island and a plurality of pins distributed at intervals along the periphery of the base island, wherein the pins are provided with a first end close to the base island, a second end far away from the base island and a limiting part positioned between the first end and the second end; the insulation structure is arranged on the pins and connected with adjacent pins, and the limiting part is at least partially inlaid in the insulation structure.
Further, the insulating structure is annularly arranged around the base island and is connected with all the pins.
Further, in the extending direction of the pins, the width of the insulating structure is 1.5-2.5 mm.
Further, the thickness of the insulating structure is larger than that of the pin, and the thickness of the insulating structure is 0.25-0.75 mm.
Further, in each of the pins, a distance from the first end to the insulating structure is not greater than a distance from the second end to the insulating structure.
Further, the insulating structure is an insulating adhesive solidified on the pins.
Further, the insulation structure is formed around the pins by injection molding of plastic packaging materials.
In order to solve the above problems, the present invention also provides a semiconductor package structure, comprising:
a lead frame as described above;
the semiconductor device is attached to the base island and is electrically connected with the pins; and
and the plastic layer is covered on the semiconductor device and at least part of the lead frame.
In order to solve the above problems, the present invention also provides a method for manufacturing a lead frame as described above, comprising the steps of:
providing a frame body, wherein the frame body is provided with a base island and a plurality of pins distributed at intervals along the periphery of the base island, and the pins are provided with a first end close to the base island, a second end far away from the base island and a limiting part positioned between the first end and the second end;
and forming an insulating structure on the pins, so that the insulating structure is connected with adjacent pins, and the limiting part is at least partially inlaid in the insulating structure.
Further, the forming an insulating structure on the pin specifically includes: the insulation glue is arranged around the pins by the glue dispensing equipment, the insulation glue covers at least part of the limiting parts and the positions between the adjacent limiting parts, then the insulation glue is cured, the adjacent limiting parts are connected by the cured insulation glue, the limiting parts are at least partially embedded in the insulation glue, and the insulation glue after curing is the insulation structure.
Further, the forming an insulating structure on the pin specifically includes: and injecting plastic packaging materials on the pins through injection molding equipment, so that the plastic packaging materials cover at least part of the limiting parts and the positions between the adjacent limiting parts, and forming the plastic packaging materials into the insulating structure after cooling.
In order to solve the above-mentioned problems, the present invention also provides a method for manufacturing a semiconductor package structure, which includes,
the method of manufacturing a lead frame as described above forms the lead frame; and
and mounting the semiconductor device on the base island.
Further, the manufacturing method further comprises,
connecting the semiconductor device with the pins by using wires; and
a molding layer is formed over the semiconductor device and at least a portion of the leadframe.
Compared with the prior art, the insulation structure is arranged on the pins, so that the pins are at least partially embedded in the insulation structure, and the adjacent pins are connected through the insulation structure, so that the adjacent pins are kept within a preset interval distance through the insulation structure, namely, the insulation structure can provide support for the slender pins and the adjacent pins, the pins are not easy to deform after being subjected to external force, and the yield is improved; in addition, the pins can be ensured not to shake in the subsequent welding process, so that the problems of difficult alignment connection between the leads and the pins and the like are reduced, and the welding strength is increased; and can effectively prevent the adjacent pins from deforming and contacting to cause short circuit.
Drawings
Fig. 1 is a schematic view of a conventional lead frame.
Fig. 2 is a schematic view of a lead frame of the present invention.
Fig. 3 is a schematic structural diagram of a portion of a lead frame according to the present invention.
Fig. 4 is a cross-sectional view of a semiconductor package structure of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 2 and 3, a first preferred embodiment of a leadframe 100 according to the present invention is shown. In this embodiment, the QFP lead frame is described as a specific embodiment, and the lead frame is mainly based on that the pins of the lead frame are relatively slender, so that the problems of deformation and shaking caused by the background art part are easy to generate, and contact and the like. Of course, the design of the lead frame 100 of the present invention is also applicable to other types of lead frames having elongated and closely spaced leads. The lead frame 100 includes a frame body 1 and an insulating structure 2 provided on the frame body 1.
As shown in fig. 2, the frame body 10 has a base island 11, and a plurality of pins 12 spaced around the base island 11. The pin 12 has a first end 121 near the base island 11, a second end 122 far from the base island 11, and a limiting portion 123 between the first end 121 and the second end 122.
The insulation structure 2 is disposed on the pins 12, and the limiting portion 123 is at least partially embedded in the insulation structure 2, and the insulation structure 2 is connected to the adjacent pins 12, so that the adjacent pins 12 are kept within a preset interval distance.
Specifically, as shown in fig. 2, the frame body 1 is provided in a substantially rectangular shape, and is a conductive base material formed by, for example, pressing or etching a thin metal plate, and as a material of the frame body 1, copper (Cu), a copper alloy, or a 42 alloy (an alloy of Fe and Ni) or the like is used, for example, and is mainly used for electrically connecting a semiconductor device to other external elements.
The shape of the base island 11 in this embodiment corresponds to the shape of the entire frame body 1, is also rectangular, and is disposed in the central region of the frame body 1. The base island 11 is mainly used for providing mechanical support for a semiconductor device (such as reference numeral 300 in fig. 4) so as to facilitate bonding operation between the semiconductor device and the leads 12, and also provide a certain heat dissipation effect for the semiconductor device. The semiconductor device 300 is generally mounted on the base island 11 in a state where the bonding surface is upward.
The pins 12 are spaced around the perimeter of the island 11, where the perimeter may be one side, or two sides, or three or four sides of the island 11. In this embodiment, as shown in fig. 2, the pins 12 are disposed around four sides of the base island 11, and the first ends 121 of the pins 12 are disposed closer to the base island 11 than the second ends 122, and a gap is disposed between the pins 12 and the base island 11, that is, an electrical separation between the pins 12 and the base island 11. When the semiconductor device 300 is electrically connected, the first ends 121 of the leads 12 are connected to the semiconductor device 300 mounted on the island 11 by wire bonding, and the second ends 122 of the leads 12 are connected to external electrical paths (not shown).
Of course, as other preferred embodiments of the present invention, when the lead frame is a non-QFP lead frame, the base island 11 may be placed at other positions, and the leads 12 may be disposed on one side, two sides, three sides, or the like around the base island 11 according to the corresponding requirements.
Further, as shown in fig. 2, in this embodiment, the number and arrangement of the pins 12 on each outer side of the land 11 are substantially the same, and in each side, the distances between the first ends 121 of the adjacent pins 12 are substantially the same, and the distances between the second ends 122 of the adjacent pins 12 are also substantially the same, but the distances between the adjacent second ends 122 are greater than the distances between the adjacent first ends 121. As a whole, the pins 12 on opposite sides of the base island 11 are mirror images of each other about the base island 11.
As shown in fig. 2, the lead frame 100 further includes a bracket 13 connected to the base island 11, and the bracket 13 includes a connection beam 131 disposed between the first end 121 of the lead 12 and the base island 11, and a support leg 132 extending from the connection beam 131 in a direction away from the base island 11. The connection beams 131 are disposed on the outer sides of the periphery of the base island 11 and connected with the corresponding edges of the base island 11 through connection pieces 133, and the connection beams 131 on adjacent sides are connected with each other, so that the connection beams 131 are integrally rectangular frame-shaped corresponding to the shape of the base island 11, and the connection beams 131 are spaced from the pins 12. The support legs 132 extend obliquely outward from the four corners of the connection beam 131 so as to be located between the pins 12 on the adjacent sides.
In the present invention, the frame body 1 of the lead frame 100 is integrally formed by a metal sheet, and before packaging, the outer sides of the second ends 122 of the plurality of pins 12 and the supporting pins 132 of the bracket 13 are integrally connected by the metal sheet, so that the positions of the plurality of pins 12 and the base island 11 can be relatively fixed, and after the semiconductor device 300 is connected by a lead wire and packaged, the connection part is cut off.
It can be seen that the second ends 122 of the pins 12 are connected to each other by the connection structure in the initial state, the distance between the adjacent second ends 122 is maintained, and the first ends 121 are in contact with each other due to the non-positioning structure and the small distance between the adjacent first ends 121, which is easy to deform.
To solve this part of the problem, the present invention provides an insulating structure 2 at the position of the stopper 123 between the first end 121 and the second end 122 and between the stoppers 123, as shown in fig. 2 and 3, so that a predetermined interval distance between the pins 12 can be maintained.
In one embodiment, as shown in fig. 3, the insulating structure 2 is formed around the pins 12 by injection molding using a molding material. In another embodiment, the insulating structure 2 may be fixed on the pins 12 by using an insulating glue. These arrangements provide the insulating structure 2 with high mechanical strength and low thermal expansion coefficient, and thus provide excellent support for the adjacent pins 12.
Further, the insulating structures 2 may be disposed on the pins 12 on each outer side of the base island 11 and between the corresponding pins 12, respectively, so as to ensure the stability of the distance between the corresponding side pins 12. Of course, as shown in fig. 2, the insulating structure 2 may be disposed around the base island 11 in a ring shape, and connected to all the leads 12, so as to further improve the stability of the entire lead frame 100.
For saving materials, the insulating structure 2 is arranged in a strip shape; specifically, the width of the insulating structure 2 is 1.5-2.5 mm, preferably 2mm, in the extending direction of the pins 12. In the thickness direction of the leads 12, the thickness of the insulating structure 2 is greater than the thickness of the limit portions 123 of the leads 12, so that the insulating structure 2 covers at least one side surface in the thickness direction of the leads 12 and an area between adjacent leads 12. Typically, the thickness of the pins 12 is not greater than 0.25mm, and the thickness of the insulating structure 2 is set to 0.25-0.75 mm, preferably 0.5mm.
When the insulating structure 2 is arranged in a strip shape, in each of the pins 12, the distance from the first end 121 to the insulating structure 2 is not greater than the distance from the second end 122 to the insulating structure 2, that is, the insulating structure 2 is located between the middle position of the pin 12 in the length direction and the first end 121, so as to ensure the deformation of the pin 12 in the area, avoid the problem of contact short circuit between adjacent pins, or not realize effective connection with the semiconductor device.
Further, as shown in fig. 4, the present invention also provides a semiconductor package structure, which includes the aforementioned lead frame 100, the semiconductor device 300, and the plastic package layer 400. Wherein the semiconductor device 300 is mounted on the base island 11 of the lead frame 100 and connected to the first end 121 of the lead 12; the molding layer 400 covers the semiconductor device 300 and at least a portion of the leadframe 100.
In this embodiment, the semiconductor device 300 and the leads 12 are electrically connected through the wires 500. In practice, the semiconductor device 300 may be a chip. The semiconductor package structure may be a Quad Flat Pack (QFP) structure. The specific structural arrangement of the lead frame 100 is as described in the foregoing detailed description, and will not be described herein.
Further, the present invention also provides a method for manufacturing the lead frame 100, which specifically includes the following steps:
providing a frame body 1, wherein the frame body 1 is provided with a base island 11 and a plurality of pins 12 distributed at intervals around the base island 11, and the pins 12 are provided with a first end 121 close to the base island 11, a second end 122 far away from the base island 11 and a limiting part 123 positioned between the first end 121 and the second end 122;
the insulating structure 2 is formed on the pins 12, so that the limiting portion 123 is at least partially embedded in the insulating structure 2, and the insulating structure 2 is connected to the adjacent pins 12, so that the adjacent pins 12 are kept within a predetermined interval.
In one embodiment, the insulating structure 2 is formed on the pin 12 by: the glue dispensing device is used to set the insulation glue around the pins 12, so that the insulation glue covers at least part of the limiting parts 123 and the positions between the adjacent limiting parts 123, then the limiting parts 123 are at least partially inlaid in the cured insulation glue after baking or photo-curing, the adjacent limiting parts are connected by the cured insulation glue, and the insulation glue after baking or photo-curing is the insulation structure 2.
In another embodiment, the molding of the insulating structure 2 on the pins 12 may also be specifically: and injecting plastic packaging material on the pins 12 through injection molding equipment, so that the plastic packaging material covers the limiting parts 123 and the positions between the adjacent limiting parts 123, and after cooling, the plastic packaging material is formed into the insulating structure 2.
Other structural parameters or arrangements of the lead frame 100 are described in detail above for the lead frame 100, and are not described in detail herein.
However, in the process of molding the lead frame 100, a plurality of the frame bodies 1 are generally molded simultaneously from the same metal sheet, the plurality of frame bodies 1 are connected to each other, and a cutting area is provided between adjacent frame bodies 1. In the method for forming the lead frame 100 according to the present invention, only one of the frame bodies 1 is provided, and in the actual operation, the step of forming the insulating structure 200 on the leads 12 may be performed simultaneously for the frame bodies 1 connected to each other and formed on the same metal sheet.
In addition, the invention also provides a manufacturing method of the semiconductor packaging structure, which specifically comprises the following steps:
forming a lead frame 100 according to the aforementioned lead frame manufacturing method; the structure of the lead frame 100 is as described above, and will not be described herein; and
the semiconductor device 300 is mounted on the base island 11 of the lead frame 100.
The semiconductor device 300 is mounted with the bonding surface of the semiconductor device 300 facing upward, and the other side is fixed to the land 11 by a heat conductive adhesive, and after mounting, the semiconductor device 300 is stably bonded to the lead frame 100 by baking, photo-curing, or the like.
A plurality of electrode terminals (not shown) are provided on the bonding surface of the semiconductor device 300 for electrical connection with the leads 12 of the lead frame 100.
Further, the manufacturing method further includes connecting the semiconductor device 300 with the leads 12 of the lead frame 100 using wires 500; and
a molding layer 400 is formed on the semiconductor device 300 and at least a portion of the lead frame 100 to cover the semiconductor device 300, the connection portion of the semiconductor device 300 and the leads 12, the wires 500, and the like by the molding layer 400, so as to seal the electrical connection structure of the molded semiconductor package structure.
The lead 500 may be connected to a corresponding electrode terminal of the semiconductor device 300 by wire bonding, for example. In addition, as shown in fig. 4, after the molding layer 400 is formed, the local areas of the second ends 122 of the plurality of pins 12 may be exposed for connection with external circuits.
In addition, in the manufacturing process of the semiconductor package, the plurality of semiconductor devices 300 may be simultaneously attached to the plurality of mutually connected lead frames 100, and then subjected to the steps of mounting, wire bonding, and plastic packaging, and then the adjacent semiconductor package may be cut and separated after the plastic packaging is completed, as in the supplementary description of the manufacturing method of the lead frame 100.
As can be seen from the foregoing, in the present invention, by arranging the insulating structure 2 on the pin 12, the pin 12 is at least partially embedded in the insulating structure 2, and the adjacent pin 12 is connected through the insulating structure 2, so that the adjacent pin 12 is kept within a preset interval distance through the insulating structure 2, that is, the insulating structure 2 can provide support for the elongated pin 12 and the adjacent pin 12, so that the pin 12 is not easy to deform after being subjected to external force, and the yield is improved; in addition, the pins can be ensured not to shake in the subsequent welding process, so that the problems of difficult alignment connection between the leads and the pins and the like are reduced, and the welding strength is increased; and can effectively prevent the adjacent pins from deforming and contacting to cause short circuit.
The invention has been described with respect to the above-described embodiments, however, the above-described embodiments are merely examples of practicing the invention. In addition, the technical features described above in the different embodiments of the present invention may be combined with each other as long as they do not collide with each other. It is to be noted that the present invention is capable of other various embodiments and that various changes and modifications can be made herein by one skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (13)
1. A lead frame, comprising:
the frame body is provided with a base island and a plurality of pins distributed at intervals along the periphery of the base island, wherein the pins are provided with a first end close to the base island, a second end far away from the base island and a limiting part positioned between the first end and the second end;
the insulation structure is arranged on the pins and connected with adjacent pins, and the limiting part is at least partially inlaid in the insulation structure.
2. The leadframe according to claim 1, wherein: the insulating structure is arranged around the base island in a ring-shaped surrounding manner and is connected with all the pins.
3. The lead frame according to claim 1 or 2, wherein: and the width of the insulating structure is 1.5-2.5 mm in the extending direction of the pins.
4. A lead frame according to claim 3, wherein: the thickness of the insulating structure is greater than that of the pins, and the thickness of the insulating structure is 0.25-0.75 mm.
5. The leadframe according to claim 1, wherein: in each of the pins, a distance from the first end to the insulating structure is not greater than a distance from the second end to the insulating structure.
6. The leadframe according to claim 1, wherein: the insulation structure is an insulation adhesive which is solidified and arranged on the pins.
7. The leadframe according to claim 1, wherein: the insulation structure is formed around the pins by injection molding of plastic packaging materials.
8. A semiconductor package structure, comprising:
the lead frame according to any one of claims 1 to 7;
the semiconductor device is attached to the base island and is electrically connected with the pins; and
and the plastic layer is covered on the semiconductor device and at least part of the lead frame.
9. A method of manufacturing the lead frame according to any one of claims 1 to 7, comprising the steps of:
providing a frame body, wherein the frame body is provided with a base island and a plurality of pins distributed at intervals along the periphery of the base island, and the pins are provided with a first end close to the base island, a second end far away from the base island and a limiting part positioned between the first end and the second end;
and forming an insulating structure on the pins, so that the insulating structure is connected with adjacent pins, and the limiting part is at least partially inlaid in the insulating structure.
10. The method of manufacturing a lead frame according to claim 9, wherein: the forming of the insulating structure on the pins is specifically as follows: the insulation glue is arranged around the pins by the glue dispensing equipment, the insulation glue covers at least part of the limiting parts and the positions between the adjacent limiting parts, then the insulation glue is cured, the adjacent limiting parts are connected by the cured insulation glue, the limiting parts are at least partially inlaid in the insulation glue, the adjacent limiting parts are connected by the cured insulation glue, and the cured insulation glue is the insulation structure.
11. The method of manufacturing a lead frame according to claim 9, wherein: the forming of the insulating structure on the pins is specifically as follows: and injecting plastic packaging materials on the pins through injection molding equipment, so that the plastic packaging materials cover the limiting parts and the positions between the adjacent limiting parts, and after cooling, the plastic packaging materials are formed into the insulating structure.
12. A method for manufacturing a semiconductor package structure, comprising,
the manufacturing method of a lead frame according to any one of claims 9 to 11, forming a lead frame; and
and mounting the semiconductor device on the base island.
13. The method of manufacturing a semiconductor package according to claim 12, further comprising,
connecting the semiconductor device with the pins by using wires; and
a molding layer is formed over the semiconductor device and at least a portion of the leadframe.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310569794.2A CN116613130A (en) | 2023-05-18 | 2023-05-18 | Lead frame and manufacturing method thereof, semiconductor packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310569794.2A CN116613130A (en) | 2023-05-18 | 2023-05-18 | Lead frame and manufacturing method thereof, semiconductor packaging structure and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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CN116613130A true CN116613130A (en) | 2023-08-18 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202310569794.2A Pending CN116613130A (en) | 2023-05-18 | 2023-05-18 | Lead frame and manufacturing method thereof, semiconductor packaging structure and manufacturing method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN116613130A (en) |
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2023
- 2023-05-18 CN CN202310569794.2A patent/CN116613130A/en active Pending
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