CN116598190A - Method for preparing gallium oxide material of power device based on phase inversion and application thereof - Google Patents

Method for preparing gallium oxide material of power device based on phase inversion and application thereof Download PDF

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CN116598190A
CN116598190A CN202310371077.9A CN202310371077A CN116598190A CN 116598190 A CN116598190 A CN 116598190A CN 202310371077 A CN202310371077 A CN 202310371077A CN 116598190 A CN116598190 A CN 116598190A
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beta
film
polycrystalline
gallium oxide
substrate
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袁俊
徐东
彭若诗
郭飞
王宽
魏强民
黄�俊
杨冰
吴畅
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Hubei Jiufengshan Laboratory
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Abstract

The application relates to the technical field of semiconductor devices, in particular to a method for preparing a gallium oxide material of a power device based on phase inversion and application thereof. The method comprises the following steps: deposition of polycrystalline Ga on a substrate 2 O 3 The film is re-doped and is used as a substrate material for preparing devices subsequently; lightly doping beta-Ga with preset thickness through bonding 2 O 3 Film bonding to polycrystalline Ga 2 O 3 On the film, beta-Ga is used 2 O 3 Is arranged into the following polycrystal Ga 2 O 3 Traction is carried out in the phase transition process; under preset conditions, polycrystalline Ga 2 O 3 Conversion to beta-Ga 2 O 3 At the same time, repairing the damage of the film interface during bonding; and removing the substrate to complete the material preparation of the device. The method utilizes the property that the isomer of gallium oxide metastable phase can be converted into beta-phase isomer under certain conditions to make polycrystalline Ga 2 O 3 Conversion of thin films to high quality beta-Ga 2 O 3 The substrate eliminates lattice mismatch between different phases to finally obtain the beta-Ga with low cost and high quality required by the high-power device 2 O 3 A film.

Description

Method for preparing gallium oxide material of power device based on phase inversion and application thereof
Technical Field
The application relates to the technical field of semiconductor devices, in particular to a method for preparing a gallium oxide material of a power device based on phase inversion and application thereof.
Background
A larger forbidden bandwidth means that the wide bandgap semiconductor has lower power loss and higher conversion efficiency in power device applications, enabling more excellent and ideal power electronics. In wide bandgap semiconductor material, ga 2 O 3 Has a forbidden band width of 4.8eV, an ideal breakdown electric field strength of 8MV/cm and BFOM value of 3400, which is about 4 times of GaN and 10 times of SiC. And thus have higher power densities and higher power densities todayGa in power electronics applications with low power consumption requirements 2 O 3 The material has more important research significance and wider market application prospect. For Ga 2 O 3 The growth preparation of large-size, high-quality and low-defect monocrystalline epitaxial films for devices is currently Ga 2 O 3 The grinding of the material is focused.
Gallium oxide has 5 isomers, alpha, beta, gamma, epsilon and delta, respectively. Wherein beta-Ga 2 O 3 (beta-phase gallium oxide) is a stable phase, alpha phase and epsilon phase are metastable phases, gamma phase and delta phase are poor in stability, and under certain conditions, the other 4 phases can face beta-Ga 2 O 3 And (5) conversion. In the research field of power devices, the power device is prepared from beta-Ga 2 O 3 Has the best thermal stability, so that the beta-Ga 2 O 3 Is the most preferred of the numerous gallium oxide types. Currently research on beta-Ga 2 O 3 The substrate growth method mainly focuses on a pulling method, a reverse mold method and an optical floating zone method. However, growing large-size, low-cost, high-quality beta-Ga 2 O 3 The wafer is very difficult because the melting point of the gallium oxide single crystal reaches 1820 ℃, the gallium oxide single crystal is extremely easy to decompose and volatilize in the high-temperature growth process, a large amount of oxygen vacancies are easy to generate, defects such as twin crystal, mosaic structure, screw dislocation and the like are further caused, and in addition, gaO and Ga generated by decomposition at high temperature are also generated 2 Gases such as O and Ga can severely corrode the iridium crucible, resulting in higher crucible maintenance costs. This results in high quality, low cost beta-Ga 2 O 3 Substrate fabrication is a challenge that limits the development of gallium oxide power devices.
Disclosure of Invention
Based on the above, the present application provides a novel preparation method for polycrystalline Ga based on the property that an isomer of gallium oxide metastable phase can be converted into a beta-phase isomer under certain conditions 2 O 3 Conversion of thin films to high quality beta-Ga 2 O 3 The substrate eliminates lattice mismatch between different phases to finally obtain the beta-Ga with low cost and high quality required by the high-power device 2 O 3 A film.
The application adopts the following technical scheme to realize the technical purposes:
the application provides a method for preparing a gallium oxide material of a power device based on phase inversion, which comprises the following steps:
deposition of polycrystalline Ga on a substrate 2 O 3 The film is re-doped and is used as a substrate material for preparing devices subsequently;
lightly doping beta-Ga with preset thickness through bonding 2 O 3 Film bonding to polycrystalline Ga 2 O 3 On the film, beta-Ga is used 2 O 3 Is arranged into the following polycrystal Ga 2 O 3 Traction is carried out in the phase transition process;
under preset conditions, polycrystalline Ga 2 O 3 Conversion to beta-Ga 2 O 3 At the same time, repairing the damage of the film interface during bonding;
and removing the substrate to complete the material preparation of the device.
As a preferred embodiment, the bonding method is as follows: firstly, two surfaces to be bonded are treated by using argon plasma at 20-25 ℃ to enable surface atoms to be in an activated state, and then the surfaces are placed into bonding equipment to finish bonding at 1000-1400 ℃ and 2000-4000 mbar.
As a preferred embodiment, the bonded lightly doped beta-Ga 2 O 3 The thickness of the film is 5-10 mu m.
As a preferred embodiment, polycrystalline Ga is made 2 O 3 Conversion to beta-Ga 2 O 3 The preset conditions of (2) are as follows: annealing at 600-1500 deg.c for 8-24 hr.
As a preferred embodiment, polycrystalline Ga is made 2 O 3 Conversion to beta-Ga 2 O 3 The preset conditions of (2) are as follows: wet heating to above 300 ℃.
As a preferred embodiment, polycrystalline Ga is deposited on a substrate 2 O 3 The method of the film is molecular beam epitaxy technology or metal organic chemical vapor deposition method or magnetron sputtering method or pulse laser deposition technology or atomization chemical vapor deposition technology.
As a preferred embodiment, the substrate isUpper deposition of polycrystalline Ga 2 O 3 The method of the film is an aerosol chemical vapor deposition technology.
As a preferred embodiment, the bonded lightly doped beta-Ga 2 O 3 The thin film is obtained by a Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method.
As a preferred embodiment, polycrystalline Ga 2 O 3 The electron concentration of the film is 2-3×10 18 cm -3 Lightly doped beta-Ga 2 O 3 The electron concentration of the film is 1.0-10 x 10 16 cm -3 。
The application also provides the gallium oxide material prepared by the method and a power device prepared by using the gallium oxide material.
The application is based on the property that the isomer of gallium oxide metastable phase can be converted into beta-phase isomer under certain conditions, and the beta-phase isomer is obtained in polycrystalline Ga 2 O 3 Bonding lightly doped beta-Ga on film 2 O 3 Then the polycrystalline Ga is added 2 O 3 Conversion of thin films to high quality beta-Ga 2 O 3 The lattice mismatch problem between different phases is eliminated at the same time of the substrate, and finally the low-cost high-quality beta-Ga needed by the high-power device is obtained 2 O 3 The method has the advantages of simple operation, low cost and easy realization.
Drawings
Fig. 1 is a flow chart of a method for preparing a gallium oxide material for a power device based on phase inversion according to the application;
FIG. 2 is a schematic structural diagram of the substrate material fabricated in example 1;
FIG. 3 shows polycrystalline Ga in example 1 2 O 3 Bonding lightly doped beta-Ga on film 2 O 3 A structural schematic diagram of the rear part;
FIG. 4 is a schematic illustration of the bonded material of example 1;
fig. 5 is a schematic structural diagram of the gallium oxide material finally prepared in example 1;
fig. 6 is a schematic diagram of the lattice arrangement before and after repair in examples 1 and 2, wherein a is a schematic diagram of the lattice arrangement before repair, and b is a schematic diagram of the lattice arrangement after repair.
In the figure:
1 substrate, 2 polycrystalline Ga 2 O 3 Thin film, 3 lightly doped beta-Ga 2 O 3 A film.
Detailed Description
The present application will be described in further detail with reference to specific examples so as to more clearly understand the present application by those skilled in the art.
To solve the problem that the low-cost and high-quality beta-Ga can not be grown at present 2 O 3 The problem of the substrate is that the skilled person starts to target to heteroepitaxy, uses cheaper and less defective silicon, sapphire and the like as the substrate, and grows gallium oxide epitaxy thereon, and finally the obtained heteroepitaxial layer structure is used for manufacturing the power device.
Although the heteroepitaxy can solve the problem of wafer size limitation, the problem of lattice mismatch of the heterointerface can occur, so that more epitaxial defects can be brought, and the use of high-power devices can be limited. And because the crystal orientation is different, the gallium oxide epitaxial layer which is grown on the substrate such as silicon, sapphire and the like in a heterogeneous way is not beta-phase, so the beta-Ga can be generated by adopting a heteroepitaxy method 2 O 3 Epitaxial defects and poor thermal stability.
Based on the above problems, in order to obtain high-quality, low-cost beta-Ga 2 O 3 Substrate and epitaxial growth method, new material growth scheme or substrate epitaxial construction method is required to be studied to realize low-cost and high-quality beta-Ga useful for device preparation 2 O 3 The film lays a foundation for preparing high-power, high-pressure-resistant and high-reliability gallium oxide devices. The technical concept of the application is to utilize a readily available high-quality lightly doped film to guide a low-quality substrate to complete phase change, thereby obtaining a high-quality heavily doped substrate, which comprises the following specific steps: by utilizing the property that the isomer of gallium oxide metastable phase can be converted into beta-phase isomer under a certain condition, the prepared polycrystalline Ga is guided by a high-quality lightly doped film 2 O 3 Conversion of thin films to beta-Ga 2 O 3 Realize low cost and high quality beta-Ga 2 O 3 The preparation of the film eliminates the lattice mismatch problem between different phases and can realize the preparation of high-power devices.
The application provides a method for preparing a gallium oxide material of a power device based on phase inversion, which comprises the following steps:
deposition of polycrystalline Ga on a substrate 1 2 O 3 Film 2, and re-doping, which is used as a substrate material for preparing devices subsequently; it is understood therein that the substrates used include, but are not limited to, sapphire substrates, silicon carbide substrates, diamond substrates, and are not Ga-resistant 2 O 3 Size, price, etc. limitations of single crystal substrates;
lightly doped beta-Ga with high quality and preset thickness through bonding 2 O 3 Film 3 is bonded to polycrystalline Ga 2 O 3 On the film, beta-Ga is used 2 O 3 Is arranged into the following polycrystal Ga 2 O 3 Traction is carried out in the phase transition process; it should be noted here that the bonding is of high quality and lightly doped beta-Ga 2 O 3 Thin film in polycrystalline Ga 2 O 3 The thin film is the basis for manufacturing high-reliability devices, fewer epitaxial defects can be used for manufacturing high-current devices, the failure of the devices caused by defect damage is avoided, and the high-quality lightly doped beta-Ga 2 O 3 The film is easy to obtain, and at present, good crystal quality can be obtained only by adopting a bonding mode, if a traditional epitaxial growth method is adopted, an epitaxial layer grows on a substrate with poor crystal quality, and a polymorphism can occur, so that the yield of the power device manufactured by the whole material system is low.
Under preset conditions, polycrystalline Ga 2 O 3 Conversion to beta-Ga 2 O 3 Simultaneously repairing the calculation of the film interface during bonding;
and removing the substrate to complete the material preparation of the device.
The bonding method comprises the following steps: firstly, two surfaces to be bonded are treated by using argon plasma at 20-25 ℃ to enable surface atoms to be in an activated state, then the surfaces are placed into bonding equipment to be contacted with each other at 1000-1400 ℃ and 2000-4000 mbar, and finally bonding is completed due to intermolecular mutual attraction.
Bonded lightly doped beta-Ga 2 O 3 The thickness of the thin film is 5-10 μm, which can be obtained by Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method.
To make polycrystalline Ga 2 O 3 Conversion to beta-Ga 2 O 3 The preset conditions of (2) are as follows: annealing at 600-1500 deg.c for 8-24 hr or heating to 300 deg.c or higher with wet process.
In addition, it is understood that the deposition of polycrystalline Ga on a substrate 2 O 3 The film method does not have great influence on the properties of the finally prepared material, and can adopt a molecular beam epitaxy technology, a metal organic chemical vapor deposition method, a magnetron sputtering method, a pulse laser deposition technology or an aerosol chemical vapor deposition technology. Among them, the mist chemical vapor deposition technique is preferably employed.
In practical application, in order to ensure that the prepared material meets the preparation requirement of a device, beta-Ga is lightly doped 2 O 3 The electron concentration of the film needs to be smaller than that of polycrystalline Ga 2 O 3 Electron concentration of thin films, e.g. polycrystalline Ga 2 O 3 The electron concentration of the film is usually 2 to 3X 10 18 cm -3 Lightly doped beta-Ga 2 O 3 The electron concentration of the film is usually 1.0 to 10X 10 16 cm -3 。
In the application, gallium oxide deposited on the substrate can be used as a conductive layer, and the forward on-resistance can be smaller by adopting high doping; the bonded lightly doped layer can be used as a pressure resistant layer, and the lightly doped layer is beneficial to improving pressure resistance.
The following examples are given for illustration of the application only and are not intended to limit the scope of the application. All other embodiments obtained by those skilled in the art without creative efforts are within the protection scope of the present application based on the specific embodiments of the present application.
Example 1
The embodiment of the application provides a method for preparing a gallium oxide material of a power device based on phase inversion, which comprises the following steps:
deposition of polycrystalline Ga on sapphire substrates using aerosol chemical vapor deposition techniques 2 O 3 Thin films and re-doping as substrate materials for subsequent device fabrication, see fig. 2;
high quality 10 μm thick lightly doped beta-Ga by bonding 2 O 3 Film bonding to polycrystalline Ga 2 O 3 On the film, beta-Ga is used 2 O 3 Is arranged into the following polycrystal Ga 2 O 3 Traction is carried out in the phase transition process, wherein the bonding conditions are as follows: firstly, two surfaces to be bonded are treated by using argon plasma at 20-25 ℃ to enable surface atoms to be in an activated state, then the surfaces are placed into bonding equipment to be contacted with each other under the pressure condition of 1200 ℃ and 3000mbar, and finally bonding is completed due to the mutual attraction between molecules, see figure 3;
polycrystalline Ga is annealed at a high temperature of 800 ℃ for 12h 2 O 3 Conversion to beta-Ga 2 O 3 Meanwhile, the damage of the bonding film interface is repaired, and as the substrate is in beta phase in epitaxy, lattice mismatch at the interface can be eliminated, see fig. 4;
the sapphire substrate is removed to complete the material preparation of the device, see fig. 5.
Example 2
The embodiment of the application provides a method for preparing a gallium oxide material of a power device based on phase inversion, which comprises the following steps:
deposition of polycrystalline Ga on sapphire substrate using magnetron sputtering 2 O 3 Thin films and re-doping, which are used as substrate materials for the subsequent preparation of devices, are shown in fig. 2 in detail;
high quality 8 μm thick lightly doped beta-Ga by bonding 2 O 3 Film bonding to polycrystalline Ga 2 O 3 On the film, beta-Ga is used 2 O 3 Is arranged into the following polycrystal Ga 2 O 3 Traction is carried out in the phase transition process, wherein the bonding conditions are as follows: firstly, two surfaces to be bonded are treated with argon plasma at 25 ℃ to make surface atoms in an activated state, thenThen placing the two materials into bonding equipment, contacting with each other at 1100 ℃ under 3500mbar pressure, and finally completing bonding due to intermolecular attraction;
heating to above 300 ℃ by hydrothermal condition to obtain polycrystalline Ga 2 O 3 Conversion to beta-Ga 2 O 3 Meanwhile, the damage of the bonding film interface is repaired, and as the substrate is in beta phase in epitaxy, lattice mismatch at the interface can be eliminated;
and removing the sapphire substrate to finish the material preparation of the device.
It should be noted that the above examples are only for further illustrating and describing the technical solution of the present application, and are not intended to limit the technical solution of the present application, and the method of the present application is only a preferred embodiment and is not intended to limit the scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. The method for preparing the gallium oxide material of the power device based on the phase inversion is characterized by comprising the following steps of:
deposition of polycrystalline Ga on a substrate 2 O 3 The film is re-doped and is used as a substrate material for preparing devices subsequently;
lightly doping beta-Ga with preset thickness through bonding 2 O 3 Film bonding to polycrystalline Ga 2 O 3 On the film, beta-Ga is used 2 O 3 Is arranged into the following polycrystal Ga 2 O 3 Traction is carried out in the phase transition process;
under preset conditions, polycrystalline Ga 2 O 3 Conversion to beta-Ga 2 O 3 At the same time, repairing the damage of the film interface during bonding;
and removing the substrate to complete the material preparation of the device.
2. The method for preparing gallium oxide material for power devices based on phase inversion according to claim 1, wherein the bonding method is as follows: firstly, two surfaces to be bonded are treated by using argon plasma at 20-25 ℃ to enable surface atoms to be in an activated state, and then the surfaces are placed into bonding equipment to finish bonding at 1000-1400 ℃ and 2000-4000 mbar.
3. The method for preparing gallium oxide material of power device based on phase inversion according to claim 1, wherein the bonded lightly doped β -Ga 2 O 3 The thickness of the film is 5-10 mu m.
4. The method for preparing gallium oxide material for power devices based on phase inversion according to claim 1, wherein polycrystalline Ga is made 2 O 3 Conversion to beta-Ga 2 O 3 The preset conditions of (2) are as follows: annealing at 600-1500 deg.c for 8-24 hr.
5. The method for preparing gallium oxide material for power devices based on phase inversion according to claim 1, wherein polycrystalline Ga is made 2 O 3 Conversion to beta-Ga 2 O 3 The preset conditions of (2) are as follows: wet heating to above 300 ℃.
6. The method for preparing gallium oxide material for power devices based on phase inversion according to claim 1, wherein polycrystalline Ga is deposited on the substrate 2 O 3 The method of the film is molecular beam epitaxy technology or metal organic chemical vapor deposition method or magnetron sputtering method or pulse laser deposition technology or atomization chemical vapor deposition technology.
7. The method for preparing gallium oxide material for power devices based on phase inversion according to claim 6, wherein polycrystalline Ga is deposited on the substrate 2 O 3 The method of the film is an aerosol chemical vapor deposition technology.
8. The method for preparing gallium oxide material of power device based on phase inversion according to claim 1, wherein the bonded lightly doped β -Ga 2 O 3 The thin film is obtained by metal organic chemical vapor deposition or molecular beam epitaxy.
9. The method for preparing gallium oxide material for power devices based on phase inversion according to claim 1, wherein the polycrystalline Ga 2 O 3 The electron concentration of the film is 2-3×10 18 cm -3 Lightly doped beta-Ga 2 O 3 The electron concentration of the film is 1.0-10 x 10 16 cm -3 。
10. Gallium oxide material prepared by the method of any one of claims 1 to 9 and a power device prepared by the material.
CN202310371077.9A 2023-04-09 2023-04-09 Method for preparing gallium oxide material of power device based on phase inversion and application thereof Pending CN116598190A (en)

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