CN116564793A - Aluminum nitride epitaxial structure and preparation method thereof - Google Patents

Aluminum nitride epitaxial structure and preparation method thereof Download PDF

Info

Publication number
CN116564793A
CN116564793A CN202210103747.4A CN202210103747A CN116564793A CN 116564793 A CN116564793 A CN 116564793A CN 202210103747 A CN202210103747 A CN 202210103747A CN 116564793 A CN116564793 A CN 116564793A
Authority
CN
China
Prior art keywords
aluminum nitride
substrate
nucleation layer
epitaxial structure
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210103747.4A
Other languages
Chinese (zh)
Inventor
张宇恒
赵德刚
梁锋
杨静
陈平
刘宗顺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
Original Assignee
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS filed Critical Institute of Semiconductors of CAS
Priority to CN202210103747.4A priority Critical patent/CN116564793A/en
Publication of CN116564793A publication Critical patent/CN116564793A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present disclosure provides an aluminum nitride epitaxial structure and a method of preparing the same, the method of preparing comprising: patterning the substrate to form holes with preset sizes on the surface of the substrate; growing aluminum nitride along a direction perpendicular to the surface of the substrate to form a nucleation layer, wherein the holes are not covered with the aluminum nitride; and laterally extending aluminum nitride along the vacant area of the hole on the nucleation layer to be combined with the nucleation layer so as to form an aluminum nitride film with a smooth surface. The preparation method can prepare the high-quality aluminum nitride epitaxial structure under the condition of low cost.

Description

Aluminum nitride epitaxial structure and preparation method thereof
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to an aluminum nitride epitaxial structure and a preparation method thereof.
Background
Aluminum nitride (AlN) is a direct band gap material, has the advantage of wide forbidden bandwidth, has important application in the field of photoelectrons, and is a key material for forming lasers, light-emitting diodes and detectors especially in ultraviolet bands.
AlN has higher transmittance to ultraviolet light and proper lattice constant, so that the AlN is suitable for an epitaxial substrate of a deep ultraviolet III-V compound optoelectronic device. However, the cost of growing pure AlN substrates is too high to be suitable for large scale application in the research and production of deep ultraviolet optoelectronic devices. Therefore, the prior art mostly uses sapphire as the substrate heteroepitaxial AlN. And because of larger lattice mismatch between the sapphire and the AlN, the heteroepitaxial AlN on the sapphire can generate larger stress and more dislocation, and hidden danger is brought to the efficiency and the service life of the subsequent optoelectronic device.
Disclosure of Invention
In view of this, the present disclosure provides a method for preparing an aluminum nitride epitaxial structure, including: patterning the substrate to form holes with preset sizes on the surface of the substrate; growing aluminum nitride along a direction perpendicular to the surface of the substrate to form a nucleation layer, wherein the holes are not covered with the aluminum nitride; and laterally extending aluminum nitride along the vacant area of the hole on the nucleation layer to be combined with the nucleation layer so as to form an aluminum nitride film with a smooth surface.
According to an embodiment of the present disclosure, the growing aluminum nitride in a direction perpendicular to the substrate surface to form a nucleation layer comprises: and placing the substrate in a reaction chamber, and introducing ammonia gas with a flow rate larger than a first preset value into the reaction chamber to control the growth of the aluminum nitride along the direction vertical to the surface of the substrate.
According to an embodiment of the disclosure, the laterally extending aluminum nitride on the nucleation layer along the void region of the hole comprises: and placing the substrate with the nucleation layer formed on the surface in the reaction chamber, and introducing ammonia gas with the flow rate smaller than a second preset value into the reaction chamber to control the aluminum nitride to grow along the direction perpendicular to the surface of the substrate, wherein the second preset value is smaller than the first preset value.
According to an embodiment of the present disclosure, wherein the reaction chamber temperature is maintained at 1000-1100 ℃.
According to an embodiment of the disclosure, the holes are circular holes arranged periodically.
According to an embodiment of the present disclosure, a nucleation layer having a thickness of 0.3 to 0.5 μm is grown.
According to an embodiment of the present disclosure, an aluminum nitride film having a thickness of greater than 1 μm is grown.
According to an embodiment of the disclosure, the first preset value is 2000sccm, and the second preset value is 500sccm.
According to an embodiment of the disclosure, the substrate comprises a sapphire substrate.
According to an embodiment of the present disclosure, before the patterning the substrate, the method further includes: and placing the substrate in a reaction chamber with a preset temperature, and introducing hydrogen into the reaction chamber to clean the surface of the substrate.
Another aspect of the present disclosure also provides an aluminum nitride epitaxial structure prepared based on the preparation method described above, the aluminum nitride epitaxial structure comprising: a substrate, wherein holes with preset sizes are formed on the surface of the substrate; a nucleation layer formed in a region outside the hole at the surface of the substrate, wherein the nucleation layer is formed of aluminum nitride grown in a direction perpendicular to the surface of the substrate; and the aluminum nitride film is formed on the nucleation layer, wherein the aluminum nitride film is formed by combining the nucleation layer and aluminum nitride which is laterally epitaxial along the vacant area of the hole.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments thereof with reference to the accompanying drawings in which:
fig. 1 schematically illustrates a block diagram of an aluminum nitride epitaxial structure provided by an embodiment of the present disclosure.
Fig. 2 schematically illustrates a flowchart of a method for preparing an aluminum nitride epitaxial structure according to an embodiment of the present disclosure.
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. Based on the embodiments in this disclosure, all other embodiments that a person of ordinary skill in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
In the present disclosure, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may communicate with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this disclosure will be understood by those of ordinary skill in the art as the case may be.
In the description of the present disclosure, it should be understood that the terms "longitudinal," "length," "circumferential," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, merely to facilitate description of the present disclosure and to simplify the description, and do not indicate or imply that the subsystem or element being referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the present disclosure.
Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may obscure the understanding of this disclosure. And the shape, size and position relation of each component in the figure do not reflect the actual size, proportion and actual position relation. In addition, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Similarly, in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. The description of the reference to the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
Fig. 1 schematically illustrates a block diagram of an aluminum nitride epitaxial structure provided in accordance with an embodiment of the present disclosure.
As shown in fig. 1, the aluminum nitride epitaxial structure may include a substrate 1, and a hole with a predetermined size is formed on the surface of the substrate 1. A nucleation layer 2 formed in an area outside the holes at the surface of the substrate 1, wherein the nucleation layer 2 is formed of aluminum nitride grown in a direction perpendicular to the surface of the substrate. And an aluminum nitride film 3 formed on the nucleation layer 2, wherein the aluminum nitride film 3 is formed by laterally extending aluminum nitride along the vacant areas of the holes and combining with the nucleation layer 2.
The aluminum nitride epitaxial structure shown in fig. 1 is described in further detail below with continued reference to fig. 2.
Fig. 2 schematically illustrates a flowchart of a method for fabricating an aluminum nitride epitaxial structure according to an embodiment of the present disclosure.
Referring to fig. 1 and 2, the preparation method may include, for example, operations S201 to S203.
In operation S201, the substrate is patterned to form holes of a predetermined size on the surface of the substrate.
In the embodiment of the present disclosure, sapphire may be selected as the substrate 1 to reduce the cost.
Before patterning the substrate 1, the substrate 1 is placed in a reaction chamber at a preset temperature, and hydrogen is introduced into the reaction chamber to clean the surface of the substrate 1. The substrate 1 may be placed in a Metal-organic vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) reaction chamber, hydrogen gas is introduced, and the temperature is maintained at 1050 ℃, so that the surface of the substrate 1 is cleaned.
After the cleaning process is completed, the substrate 1 is patterned to form circular holes arranged periodically on the surface of the substrate 1. Illustratively, a sapphire patterned substrate with a periodicity of 1 μm and a pattern diameter of 500nm circular holes was formed.
In operation S202, aluminum nitride is grown in a direction perpendicular to the surface of the substrate to form a nucleation layer, wherein the holes are not covered with aluminum nitride.
In the embodiment of the disclosure, the substrate 1 may be placed in a reaction chamber, and ammonia gas with a flow rate greater than a first preset value is introduced into the reaction chamber to control the growth of aluminum nitride in a direction perpendicular to the surface of the substrate.
Illustratively, the reactor temperature is maintained at 1000-1100 ℃, and a nucleation layer 2 is epitaxially grown vertically with an ammonia flow rate greater than 2000sccm, the nucleation layer 2 being A1N and the growth thickness may be 0.3-0.5 μm. The nucleation layer 2 is grown with the patterned holes uncovered by the epitaxial AlN crystal such that stresses cannot accumulate in-plane.
In operation S203, laterally epitaxial aluminum nitride along the void region of the hole on the nucleation layer is combined with the nucleation layer to form a smooth surface aluminum nitride film.
In the embodiment of the disclosure, a substrate with a nucleation layer 2 formed on the surface is placed in a reaction chamber, and ammonia gas with a flow rate smaller than a second preset value is introduced into the reaction chamber to control the growth of aluminum nitride along a direction perpendicular to the substrate surface 1, wherein the second preset value is smaller than the first preset value.
By way of example, the reaction chamber temperature is maintained at 1000-1100 ℃, ammonia flow of less than 500sccm is adopted, aluminum nitride is laterally epitaxial along the vacant areas of the holes and combined with the nucleation layer, a complete and smooth-surface aluminum nitride film 3 can be obtained, and the growth thickness of the aluminum nitride film 3 is greater than 1 μm.
According to the embodiment of the disclosure, in the aluminum nitride epitaxial structure prepared by the preparation method, as a nucleation layer is vertically grown on the patterned substrate in advance, in-plane stress is blocked by the patterned vacancies in the aluminum nitride epitaxial process, and the aluminum nitride crystal cannot generate cracks due to stress accumulation. Threading dislocations may be bent as much as possible to the crystal boundaries during the vertical growth phase to disappear, or annihilate, with low dislocation density. After the nucleation layer is vertically grown, aluminum nitride is laterally epitaxial along the vacant areas of the holes, and the laterally epitaxial base is the aluminum nitride of the vertical growth layer, so that lattice mismatch is low, and the quality of the epitaxial crystal is high. Because the pattern substrate with proper pattern size is selected, aluminum nitride is combined more quickly, and finally, the complete aluminum nitride film with smooth surface and higher crystal quality can be obtained. In addition, the method selects the sapphire pattern substrate, so that the production cost can be effectively reduced, and the working procedures are reduced.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.

Claims (10)

1. A preparation method of an aluminum nitride epitaxial structure comprises the following steps:
patterning the substrate to form holes with preset sizes on the surface of the substrate;
growing aluminum nitride along a direction perpendicular to the surface of the substrate to form a nucleation layer, wherein the holes are not covered with the aluminum nitride;
and laterally extending aluminum nitride along the vacant area of the hole on the nucleation layer to be combined with the nucleation layer so as to form an aluminum nitride film with a smooth surface.
2. The method of fabricating an aluminum nitride epitaxial structure of claim 1, wherein growing aluminum nitride in a direction perpendicular to the substrate surface to form a nucleation layer comprises:
and placing the substrate in a reaction chamber, and introducing ammonia gas with a flow rate larger than a first preset value into the reaction chamber to control the growth of the aluminum nitride along the direction vertical to the surface of the substrate.
3. The method of fabricating an aluminum nitride epitaxial structure of claim 2, wherein laterally epitaxially growing aluminum nitride on the nucleation layer along the void region of the hole comprises:
and placing the substrate with the nucleation layer formed on the surface in the reaction chamber, and introducing ammonia gas with the flow rate smaller than a second preset value into the reaction chamber to control the aluminum nitride to grow along the direction perpendicular to the surface of the substrate, wherein the second preset value is smaller than the first preset value.
4. A method of fabricating an aluminum nitride epitaxial structure according to claim 2 or 3, wherein the reaction chamber temperature is maintained at 1000-1100 ℃.
5. The method for preparing an aluminum nitride epitaxial structure according to claim 1, wherein the holes are circular holes which are arranged periodically.
6. The method for preparing an aluminum nitride epitaxial structure according to claim 1, wherein a nucleation layer having a thickness of 0.3 to 0.5 μm is grown and an aluminum nitride thin film having a thickness of more than 1 μm is grown.
7. The method of fabricating an aluminum nitride epitaxial structure of claim 3, wherein the first preset value is 2000sccm and the second preset value is 500sccm.
8. The method of fabricating an aluminum nitride epitaxial structure of claim 1 wherein the substrate comprises a sapphire substrate.
9. The method of fabricating an aluminum nitride epitaxial structure of claim 1, prior to the patterning the substrate, the method further comprising:
and placing the substrate in a reaction chamber with a preset temperature, and introducing hydrogen into the reaction chamber to clean the surface of the substrate.
10. An aluminum nitride epitaxial structure prepared based on the preparation method of any one of claims 1-9, comprising:
a substrate, wherein holes with preset sizes are formed on the surface of the substrate;
a nucleation layer formed in a region outside the hole at the surface of the substrate, wherein the nucleation layer is formed of aluminum nitride grown in a direction perpendicular to the surface of the substrate;
and the aluminum nitride film is formed on the nucleation layer, wherein the aluminum nitride film is formed by combining the nucleation layer and aluminum nitride which is laterally epitaxial along the vacant area of the hole.
CN202210103747.4A 2022-01-27 2022-01-27 Aluminum nitride epitaxial structure and preparation method thereof Pending CN116564793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210103747.4A CN116564793A (en) 2022-01-27 2022-01-27 Aluminum nitride epitaxial structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210103747.4A CN116564793A (en) 2022-01-27 2022-01-27 Aluminum nitride epitaxial structure and preparation method thereof

Publications (1)

Publication Number Publication Date
CN116564793A true CN116564793A (en) 2023-08-08

Family

ID=87500567

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210103747.4A Pending CN116564793A (en) 2022-01-27 2022-01-27 Aluminum nitride epitaxial structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN116564793A (en)

Similar Documents

Publication Publication Date Title
CN1649181B (en) Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
KR101222299B1 (en) Group ⅲ-nitride crystal, manufacturing method thereof, group ⅲ-nitride crystal substrate and semiconductor device
US7351347B2 (en) Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate
JP4581490B2 (en) III-V group nitride semiconductor free-standing substrate manufacturing method and III-V group nitride semiconductor manufacturing method
JP4622447B2 (en) Method for manufacturing group III nitride crystal substrate
TW200532776A (en) Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate
KR20010031642A (en) GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
KR20070058465A (en) Nitride semiconductor single crystal including ga, method for manufacturing the same, and substrate and device using the crystal
WO2004079802A1 (en) Substrate of gallium nitride single crystal and process for producing the same
JP5509680B2 (en) Group III nitride crystal and method for producing the same
JP2009500862A (en) Laser diode orientation on miscut substrates
US9234299B2 (en) Method for producing group III nitride single crystal
JP6704387B2 (en) Substrate for growing nitride semiconductor, method of manufacturing the same, semiconductor device, and method of manufacturing the same
JP2002249400A (en) Method for manufacturing compound semiconductor single crystal and utilization thereof
JP2009208991A (en) Method for producing nitride semiconductor substrate
KR100450781B1 (en) Method for manufacturing GaN single crystal
JPH11186178A (en) Gallium nitride-based compound semiconductor and its manufacture
JP5170186B2 (en) Method for manufacturing group III nitride crystal substrate
JP3757339B2 (en) Method for manufacturing compound semiconductor device
CN116564793A (en) Aluminum nitride epitaxial structure and preparation method thereof
US20050132950A1 (en) Method of growing aluminum-containing nitride semiconductor single crystal
JP2001274093A (en) Semiconductor base and its manufacturing method
JP2010254508A (en) Nitride semiconductor freestanding substrate and manufacturing method of the same, and laser diode
JP2007197240A (en) Method for manufacturing gallium nitride single crystal substrate and gallium nitride single crystal substrate
JP2006306722A (en) MANUFACTURING METHOD OF GaN SINGLE CRYSTAL SUBSTRATE, AND GaN SINGLE CRYSTAL SUBSTRATE

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication