CN116559522B - Low-temperature drift low-voltage detection circuit - Google Patents
Low-temperature drift low-voltage detection circuit Download PDFInfo
- Publication number
- CN116559522B CN116559522B CN202310840238.4A CN202310840238A CN116559522B CN 116559522 B CN116559522 B CN 116559522B CN 202310840238 A CN202310840238 A CN 202310840238A CN 116559522 B CN116559522 B CN 116559522B
- Authority
- CN
- China
- Prior art keywords
- current
- mos tube
- triode
- electrode
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 95
- 230000010076 replication Effects 0.000 claims abstract description 41
- 238000007493 shaping process Methods 0.000 claims abstract description 39
- 230000003362 replicative effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 101710170230 Antimicrobial peptide 1 Proteins 0.000 description 1
- 101710170231 Antimicrobial peptide 2 Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
The invention relates to the technical field of low-voltage detection, and discloses a low-voltage detection circuit for low temperature drift, which comprises a reference current generation unit, a first current replication unit, a second current mirror unit, a detection current generation unit, a third current mirror unit and a signal shaping unit; when the temperature sensor is actually used, the first resistor, the second resistor and the fourth resistor with the same temperature characteristics are used for generating the reference current and the detection current with the same temperature characteristics for comparison, so that the reference current and the detection current can correspondingly change along with process change or temperature change, and the influence of different processes or temperatures on detection precision can be reduced.
Description
Technical Field
The invention relates to the technical field of low-voltage detection, in particular to a low-temperature drift low-voltage detection circuit.
Background
With the development of electronic technology and semiconductor technology, the working voltage of the circuit system is gradually reduced, so that the detectable interval of the low voltage detection circuit in the circuit system is also gradually reduced, and a higher voltage precision detection requirement is provided for the low voltage detection circuit.
In the circuit system, the low voltage detection circuit is a circuit which ensures that the circuit does not work under low voltage, when the power supply voltage of the circuit system is detected to be lower than a certain voltage, the detection signal output by the low voltage detection circuit stops working of the circuit system, and when the power supply voltage of the circuit system is detected to be higher than the standby voltage, the detection signal output by the low voltage detection circuit enables the circuit system to enter a document working state. The signal output by the low voltage detection circuit is usually used for resetting the circuit system, and the basic requirement is that the circuit system cannot generate too large fluctuation under various extreme working states, and the power consumption of the circuit system is low in a standby state.
The existing low voltage detection circuit has the following two structures:
the first structure comprises a reference voltage circuit consisting of resistors R1, R2, R3, R4, R5, a triode Q1, a triode Q2 and a comparator AMP1, a voltage dividing circuit consisting of resistors R6 and R7 and a comparator AMP2 for carrying out detection voltages output by the reference voltage and the voltage dividing circuit, and the voltage detecting point can not have too large fluctuation under various extreme working states, but more power consumption and complicated circuit structure are required due to the need of generating the reference voltage;
the second structure is that the threshold voltage of the MOS tube is used as a comparison point, and the structure is simpler, but is easily influenced by the manufacturing process and the temperature of the device, and the detection precision is not high.
Disclosure of Invention
In view of the shortcomings of the background technology, the invention provides the low-voltage detection circuit which has a simple structure, does not need reference voltage, is not influenced by a process and has low temperature drift.
In order to solve the technical problems, the invention provides the following technical scheme: a low-voltage detection circuit of low temperature drift comprises a reference current generation unit, a first current replication unit, a second current mirror unit, a detection current generation unit, a third current mirror unit and a signal shaping unit;
the reference current generation unit is used for generating a first current and a second current on the first resistor and the second resistor and outputting a reference current, the reference current is the sum of the first current and the second current, the temperature characteristics of the first resistor and the second resistor are the same, and the temperature characteristic of the reference current and the temperature characteristic of the first resistor are in inverse relation;
the first current copying unit is used for copying the reference current and outputting a first copying current and a second copying current, and the first copying current is input to the second current mirror unit;
the second current mirror unit outputs a third replication current based on the input first replication current, a current input end of the third replication current is electrically connected with an input end of the signal shaping unit, and a current output end of the third replication current is grounded;
the detection current generation unit is electrically connected with a branch circuit of the first current replication unit outputting a second replication current, when the first current replication unit outputs the second replication current, the input detection voltage is applied to a fourth resistor and the detection current is generated on the fourth resistor, the temperature characteristic of the fourth resistor is the same as that of the second resistor, the third current mirror unit is used for replicating the detection current and outputting a fourth replication current, and the current output end of the fourth replication current is electrically connected with the input end of the signal shaping unit;
when the fourth replication current is larger than the third replication current, the input end of the signal shaping unit inputs a high-level signal, and when the fourth replication current is smaller than the third replication current, the input end of the signal shaping unit inputs a low-level signal; the signal shaping unit inverts an input signal.
In one embodiment, the detection current generating unit generates a detection current that reaches a maximum value when the detection voltage is greater than a high voltage threshold.
In a certain embodiment, the reference current generating unit includes a resistor R3, a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a transistor Q5, and a MOS transistor M1;
one end of the resistor R3 is configured to input power supply voltage, and the other end of the resistor R3 is electrically connected with the collector of the triode Q1, the base of the triode Q2 and the base of the triode Q3 respectively; the collector of the triode Q2 is respectively and electrically connected with the collector of the triode Q3, the drain of the MOS tube M1 and the grid electrode of the MOS tube M1, the source electrode of the MOS tube M1 is configured to input power supply voltage, and the emitter electrode of the triode Q3 is grounded through the second resistor; the emitter of the triode Q1 is respectively and electrically connected with the collector of the triode Q4 and the base of the triode Q5; the emitter of the triode Q2 is respectively and electrically connected with the collector of the triode Q5 and the collector of the triode Q4; the emitter of the triode Q4 is grounded, and the emitter of the triode Q5 is grounded through the first resistor.
In a certain embodiment, the first current replication unit includes a MOS transistor M2 and a MOS transistor M3; the second current mirror unit comprises a MOS tube M8, a MOS tube M9 and a MOS tube M11;
the source electrode of the MOS tube M2 and the source electrode of the MOS tube M3 are configured to input power supply voltage, and the grid electrode of the MOS tube M1 is electrically connected with the grid electrode of the MOS tube M2 and the grid electrode of the MOS tube M3 respectively;
the drain electrode of the MOS tube M2 is electrically connected with the drain electrode of the MOS tube M8, the grid electrode of the MOS tube M9 and the grid electrode of the MOS tube M11 respectively, the source electrode of the MOS tube M8 and the source electrode of the MOS tube M11 are grounded, the drain electrode of the MOS tube M3 is electrically connected with the detection current generating unit and the drain electrode of the MOS tube M9 respectively, and the source electrode of the MOS tube M9 is electrically connected with the detection voltage input end of the detection current generating unit.
In an embodiment, the detection current generating unit includes a transistor Q6, a transistor Q7, a transistor Q8, a transistor Q9, and a MOS transistor M10;
the collector of the triode Q6 is respectively and electrically connected with the drain electrode of the MOS tube M3, the base electrode of the triode Q6, the base electrode of the triode Q7 and the source electrode of the MOS tube M10, the emitter electrode of the triode Q6 is electrically connected with the emitter electrode of the triode Q8, the base electrode of the triode Q8 is the detection voltage input end, and the collector electrode of the triode Q8 is grounded;
the emitter of the triode Q7 is electrically connected with one end of a fourth resistor, the other end of the fourth resistor is respectively electrically connected with the emitter of the triode Q9 and the grid electrode of the MOS tube M10, and the base electrode of the triode Q9, the drain electrode of the MOS tube M10 and the collector electrode of the triode Q9 are grounded.
In a certain implementation manner, the third current mirror unit includes a MOS transistor M4, a MOS transistor M5, and a MOS transistor M6;
the source electrode of the MOS tube M4, the source electrode of the MOS tube M5 and the source electrode of the MOS tube M6 are configured to input power supply voltage; the grid electrode of the MOS tube M4 is electrically connected with the grid electrode of the MOS tube M5, the drain electrode of the MOS tube M5 and the grid electrode of the MOS tube M6 respectively; the drain electrode of the MOS transistor M4 is electrically connected with the collector electrode of the triode Q6; the drain electrode of the MOS tube M6 is electrically connected with the drain electrode of the MOS tube M11.
In a certain embodiment, the signal shaping unit includes a schmitt inverter X1, an inverter X2, and an inverter X3, where an input end of the schmitt inverter X1 is an input end of the signal shaping unit, the schmitt inverter X1 is electrically connected to the inverter X3 through the inverter X2, and an output end of the inverter X3 is an output end of the signal shaping unit.
In a certain implementation mode, the invention further comprises an MOS tube M7 and an MOS tube M12, wherein the drain electrode of the MOS tube M7 is electrically connected with the input end of the signal shaping unit, the grid electrode of the MOS tube M7 is electrically connected with the output end of the signal shaping unit, the source electrode of the MOS tube M7 is electrically connected with the drain electrode of the MOS tube M12, the grid electrode of the MOS tube M12 is electrically connected with the grid electrode of the MOS tube M11, and the source electrode of the MOS tube M12 is grounded.
Compared with the prior art, the invention has the following beneficial effects:
firstly, the invention generates the current with inverse proportion to the resistance temperature characteristic by utilizing the triode characteristic, the first resistance and the second resistance, and compares the current with inverse proportion to the resistance temperature characteristic generated by the fourth resistance; the reference current and the detection current can correspondingly change along with process change or temperature change, and the current of the reference current and the detection current can be adjusted by adjusting the proportion of the first resistor and the second resistor for different processes, so that the reference current and the detection current are suitable for various processes and temperatures;
secondly, the invention does not need to generate reference voltage, thereby reducing the use power consumption of the circuit;
finally, the low-voltage detection point can be flexibly adjusted by adjusting the sizes of different power supply voltages and/or setting the second resistor, the third resistor and the fourth resistor with different resistance values, so that the adaptation range of the invention is wider.
Drawings
FIG. 1 is a schematic view of the structure of the present invention in an embodiment;
fig. 2 is a circuit diagram of an implementation of the present invention in an embodiment.
Detailed Description
The invention will now be described in further detail with reference to the accompanying drawings. The drawings are simplified schematic representations which merely illustrate the basic structure of the invention and therefore show only the structures which are relevant to the invention.
As shown in fig. 1, a low-voltage detection circuit of low temperature drift includes a reference current generation unit 1, a first current replication unit 2, a second current mirror unit 3, a detection current generation unit 4, a third current mirror unit 5, and a signal shaping unit 6;
the reference current generating unit 1 is configured to generate a first current and a second current on a first resistor and a second resistor, and output a reference current, where the reference current is a sum of the first current and the second current, and temperature characteristics of the first resistor and the second resistor are the same, and the first resistor and the second resistor are negative temperature characteristics, and the temperature characteristics of the reference current are in inverse relation with the temperature characteristics of the first resistor;
the first current copying unit 2 is for copying the reference current and outputting a first copying current and a second copying current, the first copying current being input to the second current mirror unit 3; wherein the first current replica unit 2 can replicate the first replica current and the second replica current in proportion;
the second current mirror unit 3 outputs a third replica current based on the input first replica current, a current input end of the third replica current is electrically connected with an input end of the signal shaping unit 6, and a current output end of the third replica current is grounded;
the detection current generating unit 4 is electrically connected with a branch circuit of the first current copying unit 2 outputting the second copying current, when the first current copying unit 2 outputs the second copying current, the input detection voltage is applied to a fourth resistor and the detection current is generated on the fourth resistor, the temperature characteristic of the fourth resistor is the same as that of the second resistor, the third current mirror unit 5 is used for copying the detection current and outputting the fourth copying current, and the current output end of the fourth copying current is electrically connected with the input end of the signal shaping unit 6;
when the fourth replica current is larger than the third replica current, the input end of the signal shaping unit 6 inputs a high level signal, and when the fourth replica current is smaller than the third replica current, the input end of the signal shaping unit 6 inputs a low level signal; the signal shaping unit shapes an input signal.
When the temperature sensor is actually used, the first resistor, the second resistor and the fourth resistor with the same temperature characteristics are used for generating the reference current and the detection current with the same temperature characteristics for comparison, so that the reference current and the detection current can correspondingly change along with process change or temperature change, and the influence of different processes or temperatures on detection precision can be reduced.
An implementation circuit of the present invention is shown in fig. 2, a reference current generating unit 1 includes a resistor R3, a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a transistor Q5, and a MOS transistor M1;
one end of the resistor R3 is configured to input power supply voltage, and the other end of the resistor R3 is respectively and electrically connected with the collector electrode of the triode Q1, the base electrode of the triode Q2 and the base electrode of the triode Q3; the collector of the triode Q2 is respectively and electrically connected with the collector of the triode Q3, the drain of the MOS tube M1 and the grid electrode of the MOS tube M1, the source electrode of the MOS tube M1 is configured to input power supply voltage, and the emitter electrode of the triode Q3 is grounded through a second resistor R2; the emitter of the triode Q1 is respectively and electrically connected with the collector of the triode Q4 and the base of the triode Q5; the emitter of the triode Q2 is respectively and electrically connected with the collector of the triode Q5 and the collector of the triode Q4; the emitter of the triode Q4 is grounded, and the emitter of the triode Q5 is grounded through a first resistor R1.
The circuit of the reference current generation unit 1 shown in fig. 2 is analyzed:
after the power supply VDD is powered on, the transistor Q1 and the transistor Q2 are turned on, the point positions of the node A and the node B are raised, so that the transistor Q4 and the transistor Q5 are turned on, and the voltage of the node A and the node B is lowered and kept stable, wherein
Difference between voltage difference of base emitter of triode Q2 and voltage difference of base emitter of triode Q1
The difference between the voltage difference of the base emitter of transistor Q4 and the voltage difference of the base emitter of transistor Q5
；
Wherein Q1/q2=q5/q4=m; IQ1/IQ 2=iq 4/IQ 5=n; wherein m is the number ratio of the triode Q1 to the triode Q2;
in addition the voltage of node A;
Voltage of node B；
Voltage at node E；
Voltage at node GND；
The above formula can be combined to obtain；
A positive first current I1 is now generated at node E,；
in addition the voltage of node CAt this time, a second current is generated in the second resistor R2The method comprises the steps of carrying out a first treatment on the surface of the The superposition of the first current I1 and the second current I2 generates a reference current IP1,；
wherein R is a resistance square value, and the derivative of the molecule with respect to temperature is 0, so that the temperature characteristic of the reference current IP1 is inversely proportional to the first resistance R1
The above formula can be satisfied by adjusting the ratio of the first resistor R1 to the second resistor R2 and setting the ratio of the transistor Q1 to the transistor Q2.
In fig. 2, the first current replication unit 2 includes a MOS transistor M2 and a MOS transistor M3; the second current mirror unit 3 comprises a MOS tube M8, a MOS tube M9 and a MOS tube M11;
the source electrode of the MOS tube M1, the source electrode of the MOS tube M2 and the source electrode of the MOS tube M3 are configured at the input power supply voltage, and the grid electrode of the MOS tube M1 is electrically connected with the drain electrode of the MOS tube M1, the collector electrode of the triode Q2, the grid electrode of the MOS tube M2 and the grid electrode of the MOS tube M3 respectively;
the drain electrode of the MOS tube M2 is respectively and electrically connected with the drain electrode of the MOS tube M8, the grid electrode of the MOS tube M9 and the grid electrode of the MOS tube M11, the source electrode of the MOS tube M8 and the source electrode of the MOS tube M11 are grounded, the drain electrode of the MOS tube M3 is respectively and electrically connected with the detection current generating unit and the drain electrode of the MOS tube M9, and the source electrode of the MOS tube M9 is electrically connected with the detection voltage input end of the detection current generating unit.
In fig. 2, the detection current generation unit 4 includes a transistor Q6, a transistor Q7, a transistor Q8, a transistor Q9, and a MOS transistor M10;
the collector of the triode Q6 is respectively and electrically connected with the drain electrode of the MOS tube M3, the base electrode of the triode Q6, the base electrode of the triode Q7 and the source electrode of the MOS tube M10, the emitter electrode of the triode Q6 is electrically connected with the emitter electrode of the triode Q8, the base electrode of the triode Q8 is a detection voltage input end, and the collector electrode of the triode Q8 is grounded;
the emitter of the triode Q7 is electrically connected with one end of a fourth resistor, the other end of the fourth resistor is respectively electrically connected with the emitter of the triode Q9 and the grid electrode of the MOS tube M10, and the base electrode of the triode Q9, the drain electrode of the MOS tube M10 and the collector electrode of the triode Q9 are grounded.
In fig. 2, the third current mirror unit 5 includes a MOS transistor M4, a MOS transistor M5, and a MOS transistor M6;
the source electrode of the MOS tube M4, the source electrode of the MOS tube M5 and the source electrode of the MOS tube M6 are configured to input power supply voltage; the grid electrode of the MOS tube M4 is respectively and electrically connected with the grid electrode of the MOS tube M5, the drain electrode of the MOS tube M5 and the grid electrode of the MOS tube M6; the drain electrode of the MOS tube M4 is electrically connected with the collector electrode of the triode Q6; the drain electrode of the MOS tube M6 is electrically connected with the drain electrode of the MOS tube M11.
The first current copying unit 2, the second current mirror unit 3, the detection current generating unit 4, and the third current mirror unit 5 in fig. 2 operate on the following principle:
after the power supply VDD is electrified, the MOS tube M1 generates a reference current IP1 which is inversely proportional to the temperature coefficient of the first resistor R1, the MOS tube M2 and the MOS tube M3 form a current mirror with the MOS tube M1 respectively and are used for generating a first copy current IP2 and a second copy current, the copy proportion of the first copy current IP2 and the second copy current can be controlled by controlling the MOS tube M1, the MOS tube M2 and the MOS tube M3, the second copy current is the current flowing through the MOS tube M3, after the MOS tube M3 is conducted, the voltage of the node H is increased, the triode Q6 and the triode Q7 are started, the voltage of the node G and the node J are started to be increased, and the detection current generating unit 4 starts to work at the moment;
the input port of node F and detection voltage UVLO, detection voltage UVLO improves a VBE through triode Q8, improves a VBE through triode Q6 again, and the potential of node H is VH=UVLO+2VBE this moment, and the potential of node H reaches node L after the VBE pressure drop of triode Q7, and the voltage VL=UVLO+VBE of node L this moment. Since the base potential of transistor Q9 is bit 0, at which point J is at a potential vj=vbe, the current iu1=uvlo/R4 generated on transistor Q9. The current IU1 structure is replicated by a current mirror formed by the MOS transistor M5 and the MOS transistor M6 to obtain a fourth replication current IU3, where iu3=iu1=uvlo/R4, and in some embodiments, the replication ratio of the current IU1 may be adjusted.
After obtaining the first replica current IP2, the first replica current IP2 obtains a third replica current IP3 through a current mirror structure formed by the MOS transistor M8 and the MOS transistor M11, and the third replica current IP3 is positively correlated with the reference current IP 1.
After the third replica current IP3 and the fourth replica current IU3 are obtained, the level state of the signal at the input terminal of the signal shaping unit 6 can be determined by comparing the magnitudes of the third replica current IP3 and the fourth replica current IU3, so that the low voltage detection can be realized according to the level state of the signal at the input terminal of the signal shaping unit 6. In addition, the low-voltage detection threshold value can be adjusted by adjusting the resistance values of the first resistor R1, the second resistor R2 and the fourth resistor R4 and adjusting the replication proportion of the first current replication unit 2, the replication proportion of the second current mirror unit 3 and the replication proportion of the third current mirror unit 5, so that the application range of the invention is wider.
In practical use, since the high-level signal is in a range section, in order to make the output signal of the present invention meet the requirements, the signal shaping unit 6 inverts the signal of the drain electrode of the MOS transistor M6, and then outputs a detection signal meeting the requirements. Specifically, in fig. 2, the signal shaping unit 6 includes a schmitt inverter X1, an inverter X2, and an inverter X3, the input terminal of the schmitt inverter X1 is the input terminal of the signal shaping unit 6, the schmitt inverter X1 is electrically connected to the inverter X3 through the inverter X2, and the output terminal of the inverter X3 is the output terminal of the signal shaping unit 6.
In fig. 2, the invention further includes a MOS transistor M7 and a MOS transistor M12, wherein the drain electrode of the MOS transistor M7 is electrically connected to the input end of the signal shaping unit, the gate electrode of the MOS transistor M7 is electrically connected to the output end of the signal shaping unit 6, the source electrode of the MOS transistor M7 is electrically connected to the drain electrode of the MOS transistor M12, the gate electrode of the MOS transistor M12 is electrically connected to the gate electrode of the MOS transistor M11, and the source electrode of the MOS transistor M12 is grounded. The MOS transistor M12 and the MOS transistor M8 form a current mirror structure, a fifth copy current IP4 is generated, and the fifth copy current IP4 is positively correlated with the reference current IP 1.
In actual use, the initial potential of the node K is low, at this time, the signal shaping unit 6 outputs a high level signal, the MOS transistor M7 is turned on, at this time, the potential of the node K is determined by comparing the current magnitudes of the fourth copy current IU3 and the third copy current IP 3+fifth copy current IP4, and when IU3> IP3+ip4, the node K is in a high level state, the signal shaping unit 6 outputs a low level signal, and the circuit starts to operate. When the voltage of the detection voltage UVLO starts to drop from high, the MOS tube M7 is cut off, and the comparison point is the fourth copy current IU3 and the third copy current IP3 for comparison, so that a hysteresis comparison voltage is generated by the current of the MOS tube M12, false overturn of output caused by a burr signal can be effectively prevented, and the performance of the circuit is ensured.
In the present embodiment, comparing the magnitudes of the fourth copy current IU3 and the third copy current IP3 is equivalent to comparingWhether or not equal to->The comparison formula can be transformed into
Uvlo= (VBE/r2+vtlnm2/R1) ×r4, where R2, R1 and R4 are numbers, and R is a resistance square value, which has a temperature characteristic and is eliminated, so that the comparison point UVLO is 0 temperature, and thus a UVLO comparison point independent of temperature can be obtained.
When the detected voltage UVLO exceeds the comparison point and continues to rise, the voltage of the node H rises synchronously, the voltage drop on the fourth resistor R4 rises synchronously, and when VR4+VBE>VTH M10 When the MOS transistor M10 is turned on, the potential of the node H is clamped, the triode Q6 is turned off, and the detection current IU1 reaches the upper limit, so that the detection current IU1 can be prevented from continuously rising along with the detection voltage UVLO, and further the power consumption can be reduced.
When the detection voltage UVLO starts to drop beyond the comparison point, the potential of the node H does not start to drop from VDD but drops through the clamp point, thereby enabling the present invention to perform a faster response.
In summary, the first resistor R1, the second resistor R2 and the fourth resistor R4 with the same temperature characteristics are used for generating the reference current IP1 and the detection current IU1 with the same temperature characteristics for comparison, so that the reference current IP1 and the detection current IU1 can correspondingly change along with process change or temperature change, and the influence of different processes or temperatures on detection precision can be reduced;
in addition, on the one hand, the MOS tube M10 can avoid that the detection current IU1 is continuously increased when the detection voltage UVLO is continuously increased, so that the power consumption can be reduced, and on the other hand, when the detection voltage UVLO starts to decrease, the potential of the node H is decreased from a clamping point, so that the invention can perform faster response;
finally, the low-voltage detection point can be flexibly adjusted by adjusting the sizes of different power supply voltages and/or setting the first resistor R1, the second resistor R2 and the fourth resistor R4 with different resistance values, so that the adaptation range of the invention is wider.
The present invention has been made in view of the above-described circumstances, and it is an object of the present invention to provide a portable electronic device capable of performing various changes and modifications without departing from the scope of the technical spirit of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (8)
1. The low-voltage detection circuit for low temperature drift is characterized by comprising a reference current generation unit, a first current replication unit, a second current mirror unit, a detection current generation unit, a third current mirror unit and a signal shaping unit;
the reference current generation unit is used for generating a first current and a second current on the first resistor and the second resistor and forming a reference current, the reference current is the sum of the first current and the second current, the temperature characteristics of the first resistor and the second resistor are the same, and the temperature characteristic of the reference current and the temperature characteristic of the first resistor are in inverse relation;
the first current copying unit is used for copying the reference current and outputting a first copying current and a second copying current, and the first copying current is input to the second current mirror unit;
the second current mirror unit outputs a third replication current based on the input first replication current, a current input end of the third replication current is electrically connected with an input end of the signal shaping unit, and a current output end of the third replication current is grounded;
the detection current generation unit is electrically connected with a branch circuit of the first current replication unit outputting a second replication current, when the first current replication unit outputs the second replication current, the input detection voltage is applied to a fourth resistor and the detection current is generated on the fourth resistor, the temperature characteristic of the fourth resistor is the same as that of the second resistor, the third current mirror unit is used for replicating the detection current and outputting a fourth replication current, and the current output end of the fourth replication current is electrically connected with the input end of the signal shaping unit;
when the fourth replication current is larger than the third replication current, the input end of the signal shaping unit inputs a high-level signal, and when the fourth replication current is smaller than the third replication current, the input end of the signal shaping unit inputs a low-level signal; the signal shaping unit inverts an input signal.
2. The low-voltage detection circuit of claim 1, wherein the detection current generation unit generates a detection current that reaches a maximum value when the detection voltage is greater than a high-voltage threshold.
3. The low-voltage detection circuit of a low temperature drift according to claim 2, wherein the reference current generating unit comprises a resistor R3, a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a transistor Q5 and a MOS transistor M1;
one end of the resistor R3 is configured to input power supply voltage, and the other end of the resistor R3 is electrically connected with the collector of the triode Q1, the base of the triode Q2 and the base of the triode Q3 respectively; the collector of the triode Q2 is respectively and electrically connected with the collector of the triode Q3, the drain of the MOS tube M1 and the grid electrode of the MOS tube M1, the source electrode of the MOS tube M1 is configured to input power supply voltage, and the emitter electrode of the triode Q3 is grounded through the second resistor; the emitter of the triode Q1 is respectively and electrically connected with the collector of the triode Q4 and the base of the triode Q5; the emitter of the triode Q2 is respectively and electrically connected with the collector of the triode Q5 and the collector of the triode Q4; the emitter of the triode Q4 is grounded, and the emitter of the triode Q5 is grounded through the first resistor.
4. The low-voltage detection circuit of a low temperature drift according to claim 3, wherein the first current replication unit comprises a MOS transistor M2 and a MOS transistor M3; the second current mirror unit comprises a MOS tube M8, a MOS tube M9 and a MOS tube M11;
the source electrode of the MOS tube M2 and the source electrode of the MOS tube M3 are configured to input power supply voltage, and the grid electrode of the MOS tube M1 is electrically connected with the grid electrode of the MOS tube M2 and the grid electrode of the MOS tube M3 respectively;
the drain electrode of the MOS tube M2 is electrically connected with the drain electrode of the MOS tube M8, the grid electrode of the MOS tube M9 and the grid electrode of the MOS tube M11 respectively, the source electrode of the MOS tube M8 and the source electrode of the MOS tube M11 are grounded, the drain electrode of the MOS tube M3 is electrically connected with the detection current generating unit and the drain electrode of the MOS tube M9 respectively, and the source electrode of the MOS tube M9 is electrically connected with the detection voltage input end of the detection current generating unit.
5. The low-voltage detection circuit of claim 4, wherein the detection current generating unit comprises a transistor Q6, a transistor Q7, a transistor Q8, a transistor Q9 and a MOS transistor M10;
the collector of the triode Q6 is respectively and electrically connected with the drain electrode of the MOS tube M3, the base electrode of the triode Q6, the base electrode of the triode Q7 and the source electrode of the MOS tube M10, the emitter electrode of the triode Q6 is electrically connected with the emitter electrode of the triode Q8, the base electrode of the triode Q8 is the detection voltage input end, and the collector electrode of the triode Q8 is grounded;
the emitter of the triode Q7 is electrically connected with one end of a fourth resistor, the other end of the fourth resistor is respectively electrically connected with the emitter of the triode Q9 and the grid electrode of the MOS tube M10, and the base electrode of the triode Q9, the drain electrode of the MOS tube M10 and the collector electrode of the triode Q9 are grounded.
6. The low-voltage detection circuit of claim 5, wherein the third current mirror unit comprises a MOS transistor M4, a MOS transistor M5 and a MOS transistor M6;
the source electrode of the MOS tube M4, the source electrode of the MOS tube M5 and the source electrode of the MOS tube M6 are configured to input power supply voltage; the grid electrode of the MOS tube M4 is electrically connected with the grid electrode of the MOS tube M5, the drain electrode of the MOS tube M5 and the grid electrode of the MOS tube M6 respectively; the drain electrode of the MOS transistor M4 is electrically connected with the collector electrode of the triode Q6; the drain electrode of the MOS tube M6 is electrically connected with the drain electrode of the MOS tube M11.
7. The low-voltage detection circuit of a low temperature drift as set forth in claim 6, wherein the signal shaping unit comprises a schmitt inverter X1, an inverter X2 and an inverter X3, the input terminal of the schmitt inverter X1 is the input terminal of the signal shaping unit, the schmitt inverter X1 is electrically connected with the inverter X3 through the inverter X2, and the output terminal of the inverter X3 is the output terminal of the signal shaping unit.
8. The low-voltage detection circuit of any one of claims 4 to 7, further comprising a MOS transistor M7 and a MOS transistor M12, wherein a drain of the MOS transistor M7 is electrically connected to an input terminal of the signal shaping unit, a gate of the MOS transistor M7 is electrically connected to an output terminal of the signal shaping unit, a source of the MOS transistor M7 is electrically connected to a drain of the MOS transistor M12, a gate of the MOS transistor M12 is electrically connected to a gate of the MOS transistor M11, and a source of the MOS transistor M12 is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310840238.4A CN116559522B (en) | 2023-07-11 | 2023-07-11 | Low-temperature drift low-voltage detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310840238.4A CN116559522B (en) | 2023-07-11 | 2023-07-11 | Low-temperature drift low-voltage detection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116559522A CN116559522A (en) | 2023-08-08 |
| CN116559522B true CN116559522B (en) | 2023-09-15 |
Family
ID=87495139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310840238.4A Active CN116559522B (en) | 2023-07-11 | 2023-07-11 | Low-temperature drift low-voltage detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116559522B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117074767B (en) * | 2023-10-18 | 2024-01-30 | 苏州锴威特半导体股份有限公司 | Voltage detection circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205983278U (en) * | 2016-07-28 | 2017-02-22 | 北方电子研究院安徽有限公司 | High accuracy low temperature floats band gap reference voltage source |
| CN106645915A (en) * | 2016-12-27 | 2017-05-10 | 安徽力高新能源技术有限公司 | Image current source multiple series battery voltage detection circuit-based temperature drift compensation circuit |
| CN106774594A (en) * | 2017-02-16 | 2017-05-31 | 珠海格力电器股份有限公司 | Low Drift Temperature reference voltage circuit |
| WO2018076683A1 (en) * | 2016-10-31 | 2018-05-03 | 深圳市中兴微电子技术有限公司 | Temperature detection circuit and method |
| WO2019076092A1 (en) * | 2017-10-17 | 2019-04-25 | 广州金升阳科技有限公司 | Current detection circuit and current detection method |
| CN110867826A (en) * | 2019-10-24 | 2020-03-06 | 中国科学院微电子研究所 | Low temperature floats under-voltage locking circuit |
| CN116224011A (en) * | 2023-04-25 | 2023-06-06 | 苏州锴威特半导体股份有限公司 | Power tube overcurrent detection circuit |
-
2023
- 2023-07-11 CN CN202310840238.4A patent/CN116559522B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205983278U (en) * | 2016-07-28 | 2017-02-22 | 北方电子研究院安徽有限公司 | High accuracy low temperature floats band gap reference voltage source |
| WO2018076683A1 (en) * | 2016-10-31 | 2018-05-03 | 深圳市中兴微电子技术有限公司 | Temperature detection circuit and method |
| CN106645915A (en) * | 2016-12-27 | 2017-05-10 | 安徽力高新能源技术有限公司 | Image current source multiple series battery voltage detection circuit-based temperature drift compensation circuit |
| CN106774594A (en) * | 2017-02-16 | 2017-05-31 | 珠海格力电器股份有限公司 | Low Drift Temperature reference voltage circuit |
| WO2019076092A1 (en) * | 2017-10-17 | 2019-04-25 | 广州金升阳科技有限公司 | Current detection circuit and current detection method |
| CN110867826A (en) * | 2019-10-24 | 2020-03-06 | 中国科学院微电子研究所 | Low temperature floats under-voltage locking circuit |
| CN116224011A (en) * | 2023-04-25 | 2023-06-06 | 苏州锴威特半导体股份有限公司 | Power tube overcurrent detection circuit |
Non-Patent Citations (2)
| Title |
|---|
| 一种低温漂低电源电压调整率的基准电流源;唐俊龙等;《微电子学》;第46卷(第05期);第628-631页 * |
| 一种高电源抑制比全工艺角低温漂CMOS基准电压源;方圆等;《电子设计工程》;第20卷(第24期);第139-142页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116559522A (en) | 2023-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116559522B (en) | Low-temperature drift low-voltage detection circuit | |
| CN109491440B (en) | Voltage reference circuit | |
| US20040150381A1 (en) | Bandgap reference circuit | |
| CN112039507B (en) | High-precision power-on reset and low-power-consumption power-off reset circuit | |
| CN110989760B (en) | Detection circuit based on band-gap reference voltage and band-gap reference voltage circuit | |
| CN103092253A (en) | Reference voltage generation circuit | |
| CN110514883B (en) | High-voltage wide-input-range current sampling operational amplifier circuit | |
| CN114062765B (en) | Low-power-consumption high-precision voltage detection circuit | |
| CN209433274U (en) | A kind of constant current generative circuit structure of automatic biasing | |
| CN113110678A (en) | High-reliability starting circuit based on low power supply voltage bandgap and control method | |
| CN114356014B (en) | Low-voltage reference voltage generating circuit and chip | |
| CN113985957B (en) | Overshoot-free quick-start band gap reference circuit, chip and electronic equipment | |
| Ramirez-Angulo | Low voltage current mirrors for built-in current sensors | |
| CN112000162A (en) | Band-gap reference voltage source | |
| CN116683897B (en) | Comparator circuit, integrated circuit, and electronic device | |
| CN109474263A (en) | A kind of electrification reset circuit | |
| CN117543964A (en) | Charge pump circuit and detection circuit thereof | |
| CN110007127B (en) | Voltage detection circuit | |
| CN111208347A (en) | High-speed differential signal amplitude detection circuit | |
| CN109917843A (en) | A kind of the constant current generative circuit structure and constant current generation method of automatic biasing | |
| CN103472878A (en) | Reference current source | |
| CN111522381B (en) | Temperature coefficient adjustable current reference circuit and method | |
| CN117074767B (en) | Voltage detection circuit | |
| CN110703840A (en) | Low-noise band-gap reference output voltage establishing circuit | |
| CN214280916U (en) | Novel undervoltage protection circuit module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |