CN1165584A - 包括z轴导电膜的微电子组件 - Google Patents

包括z轴导电膜的微电子组件 Download PDF

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CN1165584A
CN1165584A CN 96191124 CN96191124A CN1165584A CN 1165584 A CN1165584 A CN 1165584A CN 96191124 CN96191124 CN 96191124 CN 96191124 A CN96191124 A CN 96191124A CN 1165584 A CN1165584 A CN 1165584A
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film
hole
metal
contact
filled
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罗伯特·K·彼得森
唐纳德·L·普里顿
戈登·D·梅里特
比利·D·埃布尔斯
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Texas Instruments Inc
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Abstract

一种两个或多个微电子部件的组件，通过多个离散固定在绝缘膜(16)孔隙中的导电毫微米数量级的小纤维(15)或小导管(15)，实现部件之间的电和/或热互联。这样一种薄膜具有各向异性的导电性，即沿Z轴有足够的导电性，而沿其他方向的导电性很小或者根本就没有导电性。

Description

包括Z轴导电膜的微电子组件
本发明涉及微电子器件的组件和封装，微电子器件包括半导体电路芯片、印刷电路板、薄膜网(TFN)的多芯片电路模块；本发明尤其涉及通过电和/或热将这些器件和模块互联起来的新装置。
背景
为了提供更可靠、成本更低的微电子互联装置，人们已经进行了至少三十年的努力。由于长期以来趋向于采用更大的电路密度以及因此需要减小电路芯片上连接片的大小和缩小连接片之间的间隔，对互联装置进行改进的要求日趋强烈。
事实上，所有的半导体器件是采用焊线来组装的，从而在电路芯片上提供与金属连接片的欧姆连接。现有的焊线要求从一个连接片的中心到相邻连接片中心之间的间隔至少为6密耳。这一限制已经阻碍了电路芯片尺寸的进一步减小和电路密度的进一步增大。焊线的这一和其他限制几十年来已为人们知晓；并且很明显，人们对能够突破使尺寸和连接片间隔的惊人减小的焊线不抱什么希望。
人们所作替代焊线的努力包括使用“高密度互联”结构，这种结构采用合成树脂膜，这种膜具有沿薄膜一个表面延伸并延伸穿过树脂膜中的通孔而与电路芯片上的隐埋连接片形成欧姆接触的金属图案。例如参见Gorczyca等人的美国专利5,161,093。这种现有技术的结构没有满足建立用于芯片封装而这种芯片具有更大电路密度的需要，也没有满足在每一芯片上互联更小连接片并且连接片间隔更小的需要；相反，它导向采用已知设计的芯片来进行多芯片互联。
IMB等公司采用反转相芯片(inverted chip)的焊料焊接，作为导线焊接的另一种方法；但这种焊接技术没有能够使连接片更小且连接片之间的间隔更靠近。
近年来，人们开发了具有填充了金属的多个小孔的弹性聚合物薄膜，用于电连接，但由于金属填充或者(1)由离散的颗粒(通常呈球形)组成，或者(2)由直径比聚合物薄膜的厚度略大的单个球组成，因而小球很少暴露在薄膜的两个表面上。因为薄膜内颗粒与颗粒表面的接触面积极其有限，从而造成每一接触点处的电阻和热阻过大；并且由于颗粒与连接片之间的表面接触面积也很有限，所以这种填充有颗粒的薄膜也不能令人满意。所有这些高阻抗接触点的之和使得互连接具有很差的性能。
单球方法也是不能令人满意的，这是因为薄膜每一侧上与小球接触点的表面面积太小；并且由于薄膜厚度由小球的直径而固定，因而薄膜不会变形以满足非均匀厚度范围的需要。人们已经尝试使用可变形的随机分布在聚合物粘结剂内的镀金聚合物小球，但每一镀金小球的直径大致与单个连接片的宽度相同，因而效果不可靠。另外，相邻小球无法分开，并且也不存在使连接片之间的间隔大体减小的潜在的可能性。
采用弹性接连块，这种连接块包含多个层叠硅片，每一硅片的表面上淀积相互平行的金轨道(gold trace)，这种弹性连接块提供了具有终端垫片(terminal pad)的电路板之间的电连接，而这些终端垫片的最小宽度为15密耳，这对于集成电路芯片上的连接片太大了。
至今，还没有可以代替导线焊接以及可以替换电子元件相互连接的其他方法的各向异性的导电膜。
发明概述
本发明的一个方面是提供了一种两个或更多个微电子元件的组件，其中，通过固定在绝缘膜孔隙内的多个、离散导电毫微米级小纤维或小管来实现元件之间的电/热互联接。孔隙通常是垂直于或大体垂直于薄膜的平面的，并延伸通过薄膜的整个厚度范围。这种薄膜被称作为具有各向异性导电性，即Z轴导电性，沿其他方向的导电性极小或没有导电性。
组件的绝缘膜是从各种材料中选出来的，包括合成树脂膜，也称为聚合膜。除了热连接和电连接以外，这种薄膜还能够在元件之间提供结构连接，例如，通过将元件粘结在一起，从而永久地固定与元件接触的金属小纤维末梢。也仅可以使用任何一种合适的紧固机构，只用压力使元件保持在一起，使非粘结的Z轴薄膜位于元件之间。这种方法使元件可以分离，以便进行更换或修理等工作。
现在采用本发明的互联接系统可以封装具有一千个以上连接片的单个集成电路芯片。同时，按照本发明，可以使两个或更多个这样的电路芯片相互连接起来。或者，可以将包含有源元件的一个或更多个电路芯片安装在无源衬底上并保持欧姆接触相互连接起来。
除了无源衬底，一个或单个电路芯片可以安装在印刷电路板或微带线或TFN或封装底座上，并与欧姆接触片相互连接起来。这种变异和组合实际上是没有穷尽的，而所有这些变异和组合都包括在本发明的范围内。
按照本发明的一例合适的Z轴导电膜是一种合成树脂膜，这种树脂膜具有毫微米大小的孔隙，孔隙从一个薄膜表面到另一表面穿过薄膜，并且至少有些孔隙内填有导电材料或化合物，比如金或其他材料，或一种或多种导电材料。薄膜的厚度在约5微米到约10密耳的范围内。薄膜和金属小纤维的尺寸确保在50GHz和更高的频率下性能良好。
这种薄膜内毫微米级孔隙直径比电路芯片上接触片之间的最小间隔要小得多；因而无论芯片的取向如何或对齐与否，填有金属的孔隙不会引起相邻触点之间的短路。本发明的目的是使术语“毫微米级”、“毫微孔”和“毫微米尺寸”包括约1毫微米到约10,000毫微米(10微米)的范围，并且最好是从10毫微米大到1,000毫微米(1微米)的范围。
例如，在具有一千个接触片的芯片上，接触片中心之间合适的间隔是约0.5密耳，或约12.5微米(等于12,500毫微米)。所以，固定在具有10毫微米直径的孔隙中的金属小纤维末梢仅覆盖或接触连接片中心之间距离的1/1250。对于宽度为0.2密耳、中心到中心的间隔为0.3密耳的连接片，相邻连接片边缘之间的间隔为0.1密耳或2,500毫微米。这样一种金属小纤维末梢只接触连接片边缘之间间隔的1/250。100毫微米的小纤维末梢仅占据连接片之间间隔的1/25。
按照本发明使用的较佳毫微孔薄膜是显著特点是孔隙的纵横比。即，对于一密耳厚的薄膜，每一孔隙长度是一密耳，或约25,000毫微米；并且因此对于10毫微米的孔隙直径，纵横比是2500∶1。本发明中使用的合适纵横比范围约10∶1至约20,000∶1，最好约100∶1至约1,000∶1。
本发明的另一个优点是这样一个事实，即为了达到所需的欧姆接触无需使互联薄膜与其他部件精确对齐。当芯片上每一连接片的某一部分与衬底上对应部分的某一部分或需要连接的其他部分对齐时，如果不允许与相邻连接片重叠，则实现可接受的对齐。
至于热耗散，除了毫微孔是用具有高热导率的材料填充以外，部件之间的热连接是用与上述用于电连接相同的方式来实现的。另外，为了使热导率最大，增大孔隙的数量和尺寸，从而使薄膜体积中由高百分比的填充孔隙组成。例如，由体积占20％的金组成的薄膜具有接近60W/M摄氏度的Z轴热导率，而设计用于热耗散的市售粘结剂仅具有5W/M摄氏度的热导率。
如果不需要电连接，除了热耗散以外，孔隙中的材料是从具有高热导率的非导电材料(例如钻石、碳或氮化硼)中选择出来的。
用于实施本发明的这种类型的毫微孔薄膜有市售，用于毫微米级过滤(nanofiltration)薄膜。它们是这样制造的，即，使无孔隙的树脂膜暴露在具有足够高能量的加速核粒子下，，使其透过薄膜的整个厚度，，随后进行选择性化学蚀刻，去除由粒子损伤的轨道，从而产生穿过整个薄膜厚度的毫微孔。蚀刻步骤也会去除少量周围未损伤的薄膜。
这些方法生产的薄膜具有直径为10毫微米的小孔隙，并且孔隙密度接近每平方厘米为10的9次方。具有这种孔隙特征的聚碳酸脂和聚酯树脂膜可从NucleporeInc.和Poretices Corp购得。一个例子是从Poretices购得的聚碳酸脂筛选膜，目录号为19368PCTE。
生产这种毫微孔薄膜的其他方法包括采用激光束、x射线、伽玛射线或电子束在薄膜中烧出毫微米损伤轨迹和/或烧孔。随后用选择性化学蚀刻产生毫微米孔隙，或用来放大薄膜中的孔。随后通过电镀、化学镀或蒸气淀积将金属或其他导体填充到孔隙中。随后再去除薄膜一个表面或多个表面上形成的多余金属，从而只在孔隙中含有金属。
随后，如果需要，再将薄膜暴露在不腐蚀金属的蚀刻剂中，从而去除金属小纤维末梢周围的少量薄膜表面，使末梢略微延伸到剩余薄膜表面之上。随后，如果需要，可以用焊料使暴露的末梢变窄，以实现焊料与电路芯片或衬底等的连接片的接触。但是，实践表明，可靠的电连接只是由触点实现的，而按照本发明，金属小纤维末梢上不能有焊料或其他形式的固定附着物。
在这种毫微孔的内部进行电镀或填充的方法见Charles R.Martin博士等人在下述论文中的报告：
“Nanomaterials：Membrane-Based Synthetic Approach，”Science，Vol 266，Pages1961-6，Dec.23，1994，
“Template Synthesis of Metal Microtubule Ensembles Utilizing Chemical，Electrochemical，and Vacuum Deposition Techniques，”J.Mater.Res.，Vol 9，No.5，Pages 1174-83，May 1994，
“Fabrication and Evaluation of Nanoelectrode Ensembles”，Analytical Chemistry，April 15，1995
“Metal Nanotuble Membranes With Electrochemically Switchable Ion-TransportSelectivity”，Science，Vol 268，May 5，1995
“Preparation and Electrochemical Characterization of UltramicroelectrodeEnsembles，”Analytical Chemistry，Vol 59，No.21，Page 2625-30，Nov 1，1987。上述论文在此引述供参考。
使用单个核粒子枪：激光束、x射线或电子束来产生损伤轨迹或孔可以方便地形成孔隙位置的图形。例如，孔隙可以排列成矩形或三角形；另外，可以提供没有孔隙的选择表面区域，从而导电薄膜图形可以制作在这样的薄膜表面区域上，用于沿x-y方向与同一薄膜其他区域上的z轴导电方向一起的电流传播。通过在蚀刻或电镀期间有选择地使薄膜表面一部分掩盖起来，从孔隙的随机分布开始，可以实现相同的结果。
按照本发明的聚合薄膜包括热塑聚合膜和热固聚合膜。例如，在加热电子器件组合物使与填充有金属的毫微孔热塑薄膜接触后，塑料的软化使器件粘结到薄膜上，从而使金属小纤维的末梢保持与器件接触。
除了加热步骤引起薄膜的永久固化(凝固)以外，填充有金属的热固性聚合薄膜还用于同一目的，从而将器件连接到薄膜的表面上，并将小纤维末梢保持在其位置上。
在某些应用场合下，最好采用弹性薄膜结构。这种薄膜的表面将完全与电路表面的微观不规则性一致，从而形成与每一薄膜表面和每一电路表面或衬底表面的最大接触面积。这种薄膜界面还实际上使所有的金属小纤维末梢与电路表面(包括每一连接片)在薄膜两面上的良好接触。净结果是很低的阻抗互联接。
例如，在具有高孔隙密度的薄膜中，经填充的孔隙代表20％以上的合成薄膜体积。所以，至少20％的每一连接片区域与金属接触，确保了很低的电阻连接。
同时，压敏粘结表面可以采用压敏粘结薄膜或者用增粘剂(如硅聚合物)涂覆薄膜来制备。这样一种胶粘表面使电路芯片保持在薄膜表面上。
本发明的Z轴导电膜还具有另外一个优点，它能使形成不完全为平面的部件的可靠互连接。即，通常将装置表面上的所有接触片设计成精确位于同一表面内。但如果有一个或多个接触片偏离该平面，那么就会形成缺陷或使连接不可靠。现在，由于本发明的薄膜能够形成充分的塑料“流”而使所有的接触片啮合起来，所以这些非平面的接触片也能被可靠连接起来。因此，当薄膜变形时，金属小纤维也会出现一些变形。由于金属小纤维具有高的纵横比，所以这种变形不会引入负面效应。
为了进一步增强薄膜流动，大量孔隙可以保持开放，即，不填充。这使薄膜能够具有压缩性，这不是正常聚合物薄膜的特征。
另外，通过仔细选择聚合物的组分，薄膜热膨胀(CTE)的x-y和/或z系数可以近似与与其连接的部件的CTE匹配。更具体地说，CTE可以与比如用于微电子半导体器件的制造的硅、金属和陶瓷匹配，以提供改进的可靠性。液晶聚合物和刚性棒聚合物特别适用于该用途，这些材料包括Hoechst的Vectra，AMOCO的xyDAR，Max Dern的Poly X DOW的POBO和Dupont的聚酰亚胺。
下述聚合物组分适用于本发明：用于互联接的热塑膜
塑料 Tg CTE Tm 损耗 ％H2O 说明
Vectra       LCPHoechst FA-X100-30 160 -5到75 285C .002 .02 产品PWB和粘接膜
聚亚苯基Maxdem 150 5到25 .005 .05 试验厂
DuPont LCP 200 试验厂Foster M
XYDARLCP(AMOCO) 250 5到44 320 .1
聚   碳   酸   脂(GE，Mobay) 150 67 160 .006 .35 现有膜
聚砜(AMOCO)用Westlake挤压的“Thermalux”膜 150 .004
PEEK(ICI) 144 334 非常结晶的
聚酯PBT 130 80 .08
聚酯PET 80
用Westlake挤压的PEIUltem1000(GE) 200 54 250 .002 .25
聚  丙  烯  酸  脂Hoechst 170
PEK(ICI) 162 373 不连续的
PEKK(DuPont) 156 305 .2
PES(BASF，AMOCO) 220 60 383
聚酮 220 很低 Shell，ModPlas，Mar
PEEKK(Hoechst) 162 373 .003 1.8
PAEK(AMOCO)
PEKEKK(BASF) 173 371
PPSU(AMOCO) 220
硅氧烷压敏膜，特制带CW-14HT或CW-1050 260
热固板和连接膜
塑料 Tg CTE Tm 损耗 ％H2O 说明
苯乙烯R04000BDN 280 13 .002 .06 PWB
不久将上市的Rogers&TI粘结膜 薄膜
聚酰亚胺 400 3 .002 .6 自旋(spin on)
PIBO(DOW) ＞400 5 薄膜，自旋(spin)
Speedbord黏合剂(Gore) C级粘结膜
附图简述
图1是现有技术各向异性导电微电子连接的放大截面图，它采用的聚合物粘结膜中分布有40微米金属球。
图2是按照本发明的微电子连接界面的放大截面图，它采用的微孔聚合物Z轴导电膜具有固定在每一薄膜孔隙中的5微米直径的金小纤维。
图3是按照本发明的微电子连接界面的放大截面图，它采用的毫微孔聚合物Z轴导电膜具有固定在每一薄膜孔隙中0.375微米直径的金小纤维。
图4是按照本发明的微电子连接界面的放大截面图，它采用的毫微孔聚合物Z轴导电膜具有固定在每一薄膜孔隙中25毫微米直径的金小纤维。
图5是按照本发明的多个微电子互连接放大截面图，它采用的毫微孔聚合物Z轴导电膜具有固定在每一薄膜孔隙中25毫微米直径的金小纤维。
图6是毫微孔树脂膜的截面图，毫微孔树脂膜中的某些正交孔隙中填充有金小纤维。
图7是毫微孔树脂薄膜的截面图，毫微孔树脂膜中的斜孔隙和正交孔隙中填充有金小纤维。
图8是毫微孔树脂膜的截面图，树脂膜中一些选择的孔隙中填充有金，其他一些孔隙中填充有导热介电材料。
图9是按照本发明的封壳底座和安装在其上面的集成电路芯片的俯视图。
图10是两个按照本发明相互连接在一起的集成电路芯片的截面图。
图11是组件的放大截面图，该组件中包含了多个按照本发明的与Z轴膜互联的印刷电路板。
图12是用以形成按照本发明互联接的Z轴导电膜透视图。
图13是用于按照本发明Z轴导电膜的原理性合成透视图，描述了许多孔隙变化和组合。
详细描述
如图1所示，现有技术在聚合物粘结薄膜中使用40微米金属球11是不能令人满意的，这是因为小球与连接片12和13的薄膜接触面积很小。尽管连接片具有经抛光的表面，但仍然保留有毫微数量级的不规则性，从而很难使小球具有良好的表面接触。因为接触面积很小，所以就不可能具有低阻抗接触。即使每一接触片采用三个或更多个小球，也不能解决这一问题。接触片的大小还不足以能够与比三个或更多个这样的小球接触。另外，小球还不能够使非平面表面具有恰当的配合公差或进行恰当的调整。
如图2所示，本发明的一个实施例包括在每一薄膜孔16中使用5微米直径的金属小纤维15，从而多个小纤维与接触片17接触。尽管单个小纤维末梢不会提供比小球11更多的与接触片的表面接触面积，但主要差别在于230个小纤维末梢将在仅容纳三个小球的同一接触片面积中配合。所以，图2中触点的总阻抗大体小于图1中触点的总阻抗；并且其大小仅为1/50或1/100。
如图3所示，本发明的另一个实施例包括薄膜22的孔隙内使用0.375微米直径金属小纤维21，用来形成与连接片23的电接触。尽管每一小纤维仅接触连接片23上的一个点，但接触单个连接片的小纤维末梢的数量却超过40,000。因此，图2所示触点的总阻抗比图3所示触点的总阻抗要大得多。
如图4所示，聚合物薄膜27中毫微米数量级的金属小纤维26的直径仅为25毫微米，从而末梢能够进入连接片28中每一谷槽27。该紧密触点与接触每一连接片的大量小纤维组合在一起，提供比图3所示实施例更低的阻抗接触，并可以与合金导线连接的阻抗特征相比。再有，由于更大的薄膜孔隙纵横比和孔隙中的金属小纤维更大的可变形度，所以薄膜的动态厚度范围更大。实际的接触阻抗是几个参数(包括小纤维偏转力、金属的韧性、表面粗糙度、部件的平面性等等)的函数。
如图5所示，按照本发明使用的薄膜能够在压力下变形，以填充电路部件之间的整个空间。因此，由于连接片32和33之间的薄膜压缩，毫微数量级的小纤维31产生变形。与此类似，由于连接片35和36之间薄膜压缩，小纤维34也产生变形。其余的小纤维37没有被压缩，并且它们无电接触，但它们却用来导热。
如图6所示，一例本发明的互联装置包含合成聚碳酸脂树脂膜41，该薄膜41具有1密耳的厚度，以及高达1百万或更高的平行毫微数量级的孔隙42，每一孔隙具有约30nm的直径，并且至少一些孔隙中填充有金毫微小纤维43。按照本发明可以使用许多其他薄膜组分以及许多其他尺寸特征。至于导电性，可以采用其他的金属或其他的导电材料(例如铜、铂、镍和银)来代替金。导电聚合物(例如  乙炔聚合物(polyacetylene)，吡咯聚合物(polypyrrole)，噻吩聚合物(polythiophene)，和苯胺聚合物(polyaniline))对于某些应用场合也是有用的毫微小纤维。
有机硅聚合物薄膜特别有用，这是因为它们具有低弹性膜量，使得薄膜能够容纳与将接触片粘结到非平面表面上相关的偏差或变形；并且使具有不同热膨胀系数的部件互联能够有更大的容限。
如图7所示，本发明的另一例互联装置包含具有厚度为1密耳的合成聚合物薄膜44，与薄膜表面正交的第一种多个平行毫微米数量级孔隙45，以与孔隙45成一定角度倾斜的第二种多个平行毫微米数量级孔隙46，并且最好还含有与孔隙45和46都成一定的角度倾斜的第三种多个毫米微数量级孔隙47。例如，孔隙15中填充有金，用于导电，而其他孔隙中填充有具有比金更大导热率但不导电的材料，例如钻石，从而实现更大的热耗散，特别是与图1所示例子相比在沿x-y方向上。
如图8所示，互联表面的另一个变异包含的合成树脂膜48中具有填充有金的孔隙49，孔隙50中填充的材料具有比金更大的导热率，孔隙51开口，用于使薄膜具有压缩性，并且具有更低的表面弹性膜量是具有相同组分的无孔隙薄膜的特征。
如图9所示，单个电路芯片52在封装底座53内倒置，从而芯片表面上的接触片通过薄膜41，芯片表面上的接触片与底座53的接触片54电连接，这在图1中单独示出。除了覆盖所有的接触片54以外，由于所有的部分包括有填充有金的孔隙，所以不需要对薄膜41进行调整。需要对芯片进行近似调整，这只是为了确保使每一接触片的某些部分纵向定向在底座53相应接触片的某些部分上。当完全组装封壳时，芯片保持在封壳的顶部位置上(未示出)，这样的设计用来向芯片施加压力。或者选择薄膜41，使之通过首先加热或不加热而使薄膜表面软化而用作粘结剂，从而使薄膜和芯片以及封壳底座形成永久的化学连接。
如图10所示，通过毫微孔隙各向异性导电膜63，使两个电路芯片61和62互联起来，毫微孔隙各向异性导电膜63中的至少一些孔隙中填充有金或其他导体。芯片通过毫微孔隙各向异性导电膜65与衬底64互联。
如图11所示，具有接触片72的多个电路板71通过Z轴导电膜73和74分别互联。
如图12所示，Z轴薄膜81包括大量的填充有金属的孔隙82，大量未填充的孔隙83和没有孔隙的区域84，区域84是在孔隙形成过程中通过对该区域进行掩膜处理而得到的。
如图13所示，Z轴导电膜91包括各种孔隙结构和各种孔隙填充物。具体说来，薄膜91包括随机的孔隙分布，填充有金属的孔隙矩形网格阵列，填充有金属的孔隙三角形网格阵列，填充有半导体的正方形图形孔隙，数个未填充的孔隙和数个部分填充的孔隙，图中示意示出了也是本发明范围内的多种组合和置换。

Claims (11)

1.由非导电毫微孔薄膜互联起来的第一和第二电子部件，其特征在于，所述薄膜具有穿过薄膜厚度并填充有金属的孔隙，从而每一上述装置与至少几个孔隙中的金属接触。
2.一种部件组件，其特征在于，它包含毫微孔薄膜，所述薄膜在选择的孔中填充有金属；第一电子部件，它具有在薄膜的一个表面上接触所述金属的第一欧姆触点；第二电子部件，它在所述薄膜的相对表面上具有接触所述金属的第二欧姆触点。
3.由非导电毫微孔薄膜互联起来的第一和第二电子部件，其特征在于，所述薄膜具有穿过薄膜厚度并填充有金属的孔隙，从而每一上述装置与至少几个孔隙中的金属接触，而所述表面的其他一些孔隙中未被填充，以便提高所述薄膜的压缩性。
4.由具有第一和第二平行表面的非导电毫微孔薄膜互联起来的第一和第二电子部件，所述薄膜具有穿过所述薄膜厚度并填充有金属的孔隙，从而每一所述部与与至少几个孔隙中的金属接触，几个所述孔隙与薄膜的表面垂直，而其他的孔隙倾斜于所述薄膜的表面，从而增强了薄膜平面的热耗散。
5.由非导电毫微孔薄膜互联起来的第一和第二电子器件，其特征在于，所述薄膜具有穿过所述薄膜厚度并填充有金属的孔隙，从而每一所述器件与至少几个孔隙中的金属接触，其中，所述薄膜包含一硅聚合物。
6.由非导电毫微孔薄膜互联起来的第一和第二电子器件，其特征在于，所述薄膜具有穿过所述薄膜厚度并填充有金属的孔隙，从而每一所述器件与至少几个孔隙中的金属接触，其中，所述薄膜包含一液晶薄膜和刚性棒聚合物薄膜。
7.如权利要求1所述的组件，其特征在于，相邻欧姆触点之间的间隔比被金属填充的最大孔隙的直径大。
8.如权利要求2所述的组件，其特征在于，相邻欧姆触点之间的间隔比被金属填充的最大孔隙的直径大。
9.如权利要求3所述的组件，其特征在于，相邻欧姆触点之间的间隔比被金属填充的最大孔隙的直径大。
10.如权利要求4所述的组件，其特征在于，相邻欧姆触点之间的间隔比被金属填充的最大孔隙的直径大。
11.如权利要求5所述的组件，其特征在于，相邻欧姆触点之间的间隔比被金属填充的最大孔隙的直径大。
CN 96191124 1995-09-27 1996-09-27 包括z轴导电膜的微电子组件 Pending CN1165584A (zh)

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