CN116540817A - Self-powered charge pump type high-power supply rejection ratio LDO circuit and control method thereof - Google Patents
Self-powered charge pump type high-power supply rejection ratio LDO circuit and control method thereof Download PDFInfo
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- CN116540817A CN116540817A CN202310592066.3A CN202310592066A CN116540817A CN 116540817 A CN116540817 A CN 116540817A CN 202310592066 A CN202310592066 A CN 202310592066A CN 116540817 A CN116540817 A CN 116540817A
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- 238000000034 method Methods 0.000 title claims description 9
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 230000003321 amplification Effects 0.000 claims abstract description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 15
- 230000005669 field effect Effects 0.000 claims abstract description 7
- 238000013459 approach Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002618 waking effect Effects 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Dc-Dc Converters (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
The invention provides a self-powered charge pump type high power supply rejection ratio LDO circuit, wherein the output end of a voltage adjusting module is respectively and electrically connected with the input end of a load and the input end of a voltage division detecting module; the output end of the voltage division detection module is connected with the input end of the differential pressure amplification module, the reference circuit is electrically connected with the input end of the differential pressure amplification module, and the output end of the differential pressure amplification module is electrically connected with the input end of the voltage adjustment module; the voltage adjustment module includes: the output end of the voltage superposition module is electrically connected with the grid electrode of the N-type field effect transistor; the voltage superposition module includes, but is not limited to, a charge pump; the power module is electrically connected with the differential pressure amplifying module and the voltage adjusting module respectively and is used for providing power for the differential pressure amplifying module and the voltage adjusting module. The power consumption of the charge pump can be reduced, and the steady-state power consumption thereof approaches zero; the ability of resisting power disturbance can be improved under the condition of ensuring low input-output voltage difference by accepting higher input voltage.
Description
Technical Field
The invention belongs to the technical field of low-voltage linear voltage regulators, and particularly relates to a self-powered charge pump type high-power supply rejection ratio LDO circuit and a control method thereof.
Background
The LDO is widely applied to integrated circuits and provides stable power supply for each unit module. Referring to fig. 4, the architecture of the LDO is that an output voltage is detected through a voltage dividing resistor, an error signal is amplified through an error amplifier EA, and the opening and closing degree of a power tube is controlled to obtain a stable output voltage, and in order to measure the capability of the output voltage to resist the interference of power supply variation, an index PSR value is provided, and the power tube has two types, namely PMOS and NMOS. Because of the difference in circuit architecture, a low dropout regulator LDO using NMOS is easier to obtain a higher PSR value than a low dropout regulator LDO using PMOS, but a low dropout regulator LDO using NMOS requires a higher supply voltage than a low dropout regulator LDO using PMOS.
In the case of the PSR requirement, better performance is obtained by using the NMOS low dropout linear regulator LDO, but due to the limitation of the supply voltage, improvement of the circuit is required, and the current scheme is to use a charge pump to increase the supply voltage to supply EA, see fig. 5.
However, the following technical problems exist in the power supply by the charge pump:
1. the charge pump consumes a large amount of power, and the charge pump itself consumes a large amount of power due to the low efficiency of the charge pump and the high EA consumption.
2. The input voltage range is limited, the output voltage of the charge pump cannot exceed the withstand voltage BV of the device used in the prior EA, and the output voltage of the charge pump is equal to 2 times of the power supply voltage, so that the power supply voltage can only reach 1/2BV at most.
3. The interference resistance of the dry power supply is weak, and the PSR value is low.
Disclosure of Invention
In view of the above problems, the present invention provides a self-powered charge pump type high power supply rejection ratio LDO circuit and a control method thereof, which can reduce the conduction loss of the charge pump, adapt to the change of a large-scale output voltage, obtain a higher PSR value, and improve the power supply interference resistance.
A self-powered charge pump type high power rejection ratio LDO circuit, comprising: the device comprises a power supply module, a reference circuit and a load, and is characterized in that the output end of a voltage adjusting module is respectively and electrically connected with the input end of the load and the input end of a voltage division detecting module;
the output end of the voltage division detection module is connected with the input end of the differential pressure amplification module, the reference circuit is electrically connected with the input end of the differential pressure amplification module, and the output end of the differential pressure amplification module is electrically connected with the input end of the voltage adjustment module;
the voltage adjustment module includes: the output end of the voltage superposition module is electrically connected with the grid electrode of the N-type field effect transistor; the voltage superposition module includes, but is not limited to, a charge pump;
the power module is electrically connected with the differential pressure amplifying module and the voltage adjusting module respectively and is used for providing power for the differential pressure amplifying module and the voltage adjusting module.
Further, the source electrode of the N-type field effect transistor is electrically connected with the input end of the charge pump.
Further, the voltage division detection module comprises a voltage division resistor R1 and a voltage division resistor R2; the output end of the voltage dividing resistor R1 is electrically connected with the input end of the voltage dividing resistor R2, and a branch circuit is formed as the output end of the voltage dividing detection module.
Further, the input end of the voltage dividing resistor R1 is used as the input end of the voltage dividing detection module and is electrically connected with the source electrode of the N-type MOS tube; the voltage dividing resistor R2 is grounded.
Further, the differential pressure amplifying module includes, but is not limited to, an error amplifier EA; the negative input end of the error amplifier is electrically connected with the output end of the voltage division detection module; the positive input end of the error amplifier EA is electrically connected with the output end of the reference circuit, and the reference circuit is grounded.
Further, the power module is electrically connected with the differential voltage amplifying module and the voltage adjusting module respectively, and includes: the power module is electrically connected with an error amplifier EA power input end in the differential pressure amplifying module and an N-type MOS tube drain electrode in the voltage adjusting module respectively.
Further, the circuit further comprises a starting circuit, wherein the input end of the starting circuit is electrically connected with a starting power supply, and the output end of the starting circuit is electrically connected with the output end of the LDO; the output end of the starting circuit is also electrically connected with the input end of the charge pump.
Further, the starting circuit comprises a P-type MOS tube, a source electrode of the P-type MOS tube is connected with the power end, and a drain electrode of the P-type MOS tube is used as an output end of the starting circuit.
Based on the same conception, the invention also provides a control method of the self-powered charge pump type high-power supply rejection ratio LDO circuit, which is used for giving an initial voltage value to the output voltage VO according to the combination of the starting voltage connected into the starting circuit and the starting control voltage input into the starting circuit, and establishing a correct working point according to the initial voltage value voltage adjusting module, the voltage division detecting module and the voltage difference amplifying module.
Further, the differential pressure amplifying module compares the reference voltage provided by the output voltage VO pre-reference circuit detected by the voltage division detecting module, and amplifies and outputs the comparison result to the voltage adjusting module;
and the voltage adjusting module performs superposition adjustment according to the comparison result of the output voltage VO and the amplified voltage difference amplifying module, and outputs the adjusted output voltage VO.
Based on the technical scheme, the invention has the following technical effects:
1. the output of the charge pump is connected with the grid electrode of the power tube, no current exists in the steady state, and the charge pump has only switching loss and no conduction loss;
2. the input voltage of the charge pump is provided by the output voltage of the LDO, the voltage is changed into a stable value, the output of the charge pump does not change along with the power supply, the condition that the output of the charge pump is too high does not occur, and the change of the output voltage in a large range can be adapted;
3. the input voltage of the charge pump is provided by the output voltage of the LDO, the output of the LDO is stable voltage, the influence of the fluctuation of the power supply voltage is very small, and the interference of the power supply is not introduced compared with the prior art, so that a higher PSR value is obtained.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a schematic diagram of a self-powered charge pump type high power rejection ratio LDO circuitry of the present invention;
FIG. 2 illustrates a circuit topology of a self-powered charge pump type high power rejection ratio LDO circuit of the present invention;
FIG. 3 shows a self-powered charge pump type high power rejection ratio LDO circuit of the present invention comprising a startup circuit topology;
FIG. 4 shows a topology of a prior art low voltage linear regulator LDO architecture;
fig. 5 shows a topology of a prior art low voltage linear regulator LDO improved architecture.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that the terms "first," "second," and the like herein are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the present application described herein. In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate an azimuth or a positional relationship based on that shown in the drawings.
Based on the prior art that the charge pump has high power consumption, the efficiency of the charge pump is low, and the power consumption of the EA (error amplifier) is high, so that the loss of the charge pump is large, the input voltage range is limited, the output voltage of the charge pump cannot exceed the withstand voltage BV of the device used by the current EA, and the output voltage of the charge pump is equal to 2 times of the power supply voltage, so that the power supply voltage can only reach 1/2BV at most.
The embodiment of the invention provides a self-powered charge pump type 1 high power supply rejection ratio LDO circuit, which is shown in fig. 1 and 2: comprising the following steps: the power supply module, the reference circuit 7 and the load 3 are characterized in that the output end of the voltage adjusting module is respectively and electrically connected with the input end of the load 3 and the input end of the voltage division detecting module; the load 3 is a resistive-capacitive load with a resistor and a capacitor connected to the ground in parallel.
The output end of the voltage division detection module is connected with the input end of the differential pressure amplification module, the reference circuit 7 is electrically connected with the input end of the differential pressure amplification module, and the output end of the differential pressure amplification module is electrically connected with the input end of the voltage adjustment module;
the voltage adjustment module includes: the output end of the voltage superposition module is electrically connected with the grid electrode of the N-type field effect transistor; the voltage superposition module includes, but is not limited to, a charge pump 1; it should be noted that, in the present invention, the charge pump 1 is mainly adopted, and other electronic devices with voltage superposition function can also be used to replace the charge pump 1;
the power module is electrically connected with the differential pressure amplifying module and the voltage adjusting module respectively and is used for providing power for the differential pressure amplifying module and the voltage adjusting module.
The source electrode of the N-type field effect transistor is electrically connected with the input end of the charge pump 1.
Specifically, the voltage division detection module comprises a voltage division resistor R1 and a voltage division resistor R2; the output end of the voltage dividing resistor R1 is electrically connected with the input end of the voltage dividing resistor R2, and a branch circuit is formed as the output end of the voltage dividing detection module. The input end of the voltage dividing resistor R1 is used as the input end of the voltage dividing detection module and is electrically connected with the source electrode of the N-type MOS tube 2; the voltage dividing resistor R2 is grounded.
In some alternative embodiments, the differential pressure amplification module includes, but is not limited to, error amplifier 6EA; it should be noted that the differential pressure amplifying module used in the present invention may include various electronic devices capable of amplifying the voltage error, and is not limited to the error amplifier 6EA, and the purpose of the present invention is to amplify the detected voltage to achieve better adjustment of the voltage error.
Specifically, the negative input end of the error amplifier EA6 is electrically connected with the output end of the partial pressure detection module; the positive input end of the error amplifier EA6 is electrically connected with the output end of the reference circuit 7, and the reference circuit 7 is grounded. The reference circuit is used for providing a reference voltage for the error amplifier EA6, so that the error amplifier EA6 compares the detection voltage with the reference voltage; the power module is electrically connected with the differential pressure amplifying module and the voltage adjusting module respectively, and comprises: the power module is electrically connected with the power input end of an error amplifier EA6 in the differential pressure amplifying module and the drain electrode of the N-type MOS tube 2 in the voltage adjusting module respectively. According to the technical scheme, the power consumption of the charge pump can be greatly reduced, and the steady-state power consumption is close to 0.
In some alternative embodiments, the circuit further comprises a start-up circuit 8, see fig. 3, wherein an input terminal of the start-up circuit 8 is electrically connected to a start-up power supply, and an output terminal of the start-up circuit 8 is electrically connected to an LDO output terminal; the output end of the starting circuit 8 is also electrically connected with the input end of the charge pump 1. The starting circuit 8 comprises a P-type MOS tube, wherein a source electrode of the P-type MOS tube is connected with a power end, and a drain electrode of the P-type MOS tube is used as an output end of the starting circuit 8. The P-type MOS tube in the starting circuit can be replaced by other electronic components with switching properties, so that the low-voltage linear voltage regulator LDO can give an initial voltage through the starting circuit in the initial stage of operation.
It should be noted that, in the initial stage of the operation of the linear regulator LDO, the output voltage VO is very small or does not exist, so that the error voltage output by the error amplifier 6EA is very small or does not exist, the voltage superposed and output by the charge pump 1 cannot reach the starting voltage of the N-type MOS transistor 2, and there may be a situation that the voltage adjustment module cannot work normally. The error amplifier and the N-type MOS tube are electrically connected with the power supply module for supplying power.
Based on the same inventive concept, the invention also provides a control method of the self-powered charge pump 1 type high power supply rejection ratio LDO circuit, which comprises the steps of inputting a starting control voltage into the starting circuit 8 according to the combination of the starting voltage connected into the starting circuit 8, giving an initial voltage value to the output voltage VO, and waking up the voltage adjusting module, the voltage division detecting module and the differential pressure amplifying module to work according to the initial voltage value.
Further, the voltage difference amplifying module compares the output voltage VO detected by the voltage division detecting module with the reference voltage provided by the reference circuit 7, and amplifies and outputs the comparison result to the voltage adjusting module;
and the voltage adjusting module performs superposition adjustment according to the comparison result of the output voltage VO and the amplified voltage difference amplifying module, and outputs the adjusted output voltage VO.
The circuit control method of the invention specifically comprises the following steps: the MOS tube in the starting circuit 8 is used for giving a grid voltage, so that the starting circuit 8 starts and gives an output voltage VO to the output end of the low-voltage linear voltage regulator LDO at the same time, and the voltage division detection module detects the output voltage VO and transmits the detected voltage to the error amplifier EA6; the error amplifier EA6 compares the detection voltage with the reference voltage transmitted by the reference circuit 7 to output an error amplification voltage to the charge pump 1, and the charge pump 1 superimposes the error amplification voltage and the given output voltage to output a voltage gm as the gate voltage of the N-type MOS tube, so that the N-type MOS tube 2 is conducted, and the output voltage VO of the low-voltage linear regulator LDO is output, and if the power supply voltage fluctuates, the fluctuation of the output voltage VO of the low-voltage linear regulator LDO is reduced in the manner described above.
Based on the technical scheme, the invention has the following technical effects:
1. the output of the charge pump is connected with the grid electrode of the power tube, no current exists in the steady state, and the charge pump has only switching loss and no conduction loss;
2. the input voltage of the charge pump is provided by the output voltage of the LDO, the voltage is changed into a stable value, the output of the charge pump does not change along with the power supply, the condition that the output of the charge pump is too high does not occur, and the change of the output voltage in a large range can be adapted.
3. The input voltage of the charge pump is provided by the output voltage of the LDO, the output of the LDO is stable voltage, the influence of the fluctuation of the power supply voltage is very small, and the interference of the power supply is not introduced compared with the prior art, so that a higher PSR value is obtained.
Although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A self-powered charge pump type high power rejection ratio LDO circuit, comprising: the device comprises a power supply module, a reference circuit and a load, and is characterized in that the output end of a voltage adjusting module is respectively and electrically connected with the input end of the load and the input end of a voltage division detecting module;
the output end of the voltage division detection module is connected with the input end of the differential pressure amplification module, the reference circuit is electrically connected with the input end of the differential pressure amplification module, and the output end of the differential pressure amplification module is electrically connected with the input end of the voltage adjustment module;
the voltage adjustment module includes: the output end of the voltage superposition module is electrically connected with the grid electrode of the N-type field effect transistor; the voltage superposition module includes, but is not limited to, a charge pump;
the power module is electrically connected with the differential pressure amplifying module and the voltage adjusting module respectively and is used for providing power for the differential pressure amplifying module and the voltage adjusting module.
2. The circuit of claim 1, wherein a source of the N-type field effect transistor is electrically connected to an input of the charge pump.
3. The circuit of claim 1, wherein the voltage division detection module comprises a voltage division resistor R1 and a voltage division resistor R2; the output end of the voltage dividing resistor R1 is electrically connected with the input end of the voltage dividing resistor R2, and a branch circuit is formed as the output end of the voltage dividing detection module.
4. The circuit of claim 3, wherein the input end of the voltage dividing resistor R1 is used as the input end of the voltage dividing detection module and is electrically connected with the source electrode of the N-type MOS tube; the voltage dividing resistor R2 is grounded.
5. The circuit of claim 1, wherein the differential amplifier module includes, but is not limited to, an error amplifier EA; the negative input end of the error amplifier is electrically connected with the output end of the voltage division detection module; the positive input end of the error amplifier EA is electrically connected with the output end of the reference circuit, and the reference circuit is grounded.
6. The circuit of claim 1, wherein the power module is electrically connected to the differential amplifier module and the voltage regulation module, respectively, comprising: the power module is electrically connected with an error amplifier EA power input end in the differential pressure amplifying module and an N-type MOS tube drain electrode in the voltage adjusting module respectively.
7. The circuit of any one of claims 1 to 6, further comprising a start-up circuit having an input electrically connected to a start-up power supply and an output electrically connected to an LDO output; the output end of the starting circuit is also electrically connected with the input end of the charge pump.
8. The circuit of claim 7, wherein the start-up circuit comprises a P-type MOS transistor, a source of the P-type MOS transistor is connected to a power supply terminal, and a drain of the P-type MOS transistor is used as a start-up circuit output terminal.
9. A control method of a self-powered charge pump type high-power supply rejection ratio LDO circuit is characterized in that an initial voltage value is given to an output voltage VO according to the combination of a starting voltage connected into a starting circuit and a starting control voltage input into the starting circuit, and a correct working point is established according to an initial voltage value wake-up voltage adjusting module, a voltage division detecting module and a voltage difference amplifying module.
10. The control method according to claim 9, wherein the voltage difference amplifying module compares the reference voltage provided by the output voltage VO pre-reference circuit detected by the voltage division detecting module, and amplifies the comparison result to output to the voltage adjusting module;
and the voltage adjusting module performs superposition adjustment according to the comparison result of the output voltage VO and the amplified voltage difference amplifying module, and outputs the adjusted output voltage VO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310592066.3A CN116540817A (en) | 2023-05-24 | 2023-05-24 | Self-powered charge pump type high-power supply rejection ratio LDO circuit and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310592066.3A CN116540817A (en) | 2023-05-24 | 2023-05-24 | Self-powered charge pump type high-power supply rejection ratio LDO circuit and control method thereof |
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| CN116540817A true CN116540817A (en) | 2023-08-04 |
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| CN202310592066.3A Pending CN116540817A (en) | 2023-05-24 | 2023-05-24 | Self-powered charge pump type high-power supply rejection ratio LDO circuit and control method thereof |
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| CN102495656A (en) * | 2011-12-09 | 2012-06-13 | 电子科技大学 | Low dropout linear regulator |
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| WO2018161834A1 (en) * | 2017-03-08 | 2018-09-13 | Yangtze Memory Technologies Co., Ltd. | Low-dropout regulators |
| CN109074110A (en) * | 2016-03-31 | 2018-12-21 | 高通股份有限公司 | The low dropout regulator of gate boost |
| CN214954726U (en) * | 2021-07-16 | 2021-11-30 | 中微半导体(深圳)股份有限公司 | LDO circuit and use equipment of this circuit |
| CN217238691U (en) * | 2021-12-31 | 2022-08-19 | 上海艾为微电子技术有限公司 | Low dropout regulator, low power consumption power supply circuit and electronic equipment |
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2023
- 2023-05-24 CN CN202310592066.3A patent/CN116540817A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495656A (en) * | 2011-12-09 | 2012-06-13 | 电子科技大学 | Low dropout linear regulator |
| CN104793688A (en) * | 2015-04-22 | 2015-07-22 | 无锡中普微电子有限公司 | Voltage regulator |
| CN109074110A (en) * | 2016-03-31 | 2018-12-21 | 高通股份有限公司 | The low dropout regulator of gate boost |
| CN105867508A (en) * | 2016-04-14 | 2016-08-17 | 四川和芯微电子股份有限公司 | Low-dropout linear voltage-stabilizing circuit |
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