CN116528067A - High-time-resolution image acquisition method based on global shutter type CMOS image sensor - Google Patents

High-time-resolution image acquisition method based on global shutter type CMOS image sensor Download PDF

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CN116528067A
CN116528067A CN202310554020.2A CN202310554020A CN116528067A CN 116528067 A CN116528067 A CN 116528067A CN 202310554020 A CN202310554020 A CN 202310554020A CN 116528067 A CN116528067 A CN 116528067A
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control signal
floating gate
image sensor
global shutter
time
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CN116528067B (en
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严明
周二瑞
白琼
盛亮
李斌康
黑东炜
刘璐
李刚
郭明安
王晶
时明月
杨少华
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Northwest Institute of Nuclear Technology
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The invention relates to an image acquisition method of a CMOS image sensor, in particular to a high-time resolution image acquisition method based on a global shutter type CMOS image sensor, which solves the technical problem that a common global shutter type CMOS image sensor is difficult to realize direct acquisition of a high-time resolution image. The invention utilizes the pixel structure characteristics of the global shutter type CMOS image sensor to carry out special driving time sequence design, the required driving system is simple, the improvement cost is lower, and the time resolution capability of an imaging system can be obviously improved on the premise of not increasing the complexity and the cost of the system; the extremely short exposure time can be realized, so that the high-time resolution imaging system does not need to rely on the optical shutter function of the MCP image intensifier, and the spatial resolution of the imaging system is effectively improved; meanwhile, the exposure time of the image can be flexibly adjusted according to the requirement of the imaging target on time resolution, the ultra-high time resolution image acquisition with the minimum nanosecond magnitude can be realized, and the application range is wide.

Description

High-time-resolution image acquisition method based on global shutter type CMOS image sensor
Technical Field
The invention relates to an image acquisition method of a CMOS image sensor, in particular to a high-time resolution image acquisition method based on a global shutter type CMOS image sensor.
Background
High-speed cameras based on image sensors are widely used in the field of transient physical process research. Currently, there are two main types of commonly used image sensors: CCD image sensor and CMOS image sensor. The CMOS image sensor has good compatibility with analog circuits and large-scale digital circuits, is convenient for realizing functions of high-precision quantization, high-speed sampling output and the like in the sensor, gradually replaces a CCD image sensor, and becomes a main sensor for imaging system design.
CMOS image sensors are broadly classified into global shutter type, rolling shutter type, and hybrid shutter type according to the reset and exposure control signal characteristics of their pixel arrays. Wherein, the global shutter type CMOS image sensor generally has control signals for simultaneously exposing and simultaneously resetting all pixels in the pixel array; the rolling shutter type CMOS image sensor intelligently performs unified exposure and reset control on pixels in the same row; the hybrid shutter type CMOS image sensor has a uniform exposure control signal for the pixel array, and can start exposure for the pixel array at the same time, but the exposure time for each row of pixels is different, and the reset signal is row reset.
In the field of high-speed imaging, imaging systems with imaging speeds between 1000 frames per second and 100 tens of thousands of frames per second are generally referred to as high-speed imaging systems, with exposure times between 1ms and 1 μs; an imaging system with an imaging speed greater than 100 ten thousand frames per second is referred to as an ultra-high speed imaging system, with an exposure time of less than 1 μs. The minimum exposure time of an electronic shutter based sensor is typically limited by the minimum pulse width of the sensor exposure control signal or the minimum transfer signal pulse width of the pixel array, and the minimum exposure time of a common CMOS image sensor is typically on the order of microseconds, and the minimum exposure time of a particular on-chip memory image sensor is on the order of tens of nanoseconds to hundreds of nanoseconds.
The current common global shutter CMOS image sensor is used for acquiring nanosecond time resolution images, and a high time resolution shutter technology such as an optical shutter of an image intensifier is generally required, so that the cost of an imaging system is increased.
Disclosure of Invention
The invention aims to solve the technical problem that a common global shutter type CMOS image sensor is difficult to realize direct acquisition of a high-time resolution image, and provides a high-time resolution image acquisition method based on the global shutter type CMOS image sensor.
The principle of the invention is as follows:
the invention utilizes the photosensitive area reset, floating grid reset and charge transfer control signals and the circuit structure of the global shutter type CMOS image sensor, and realizes the acquisition of high-time resolution images through the association control of the pixel photosensitive area and the pixel floating grid.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the high-time resolution image acquisition method based on the global shutter type CMOS image sensor is characterized by comprising the following steps of:
step 1, selecting a global shutter type CMOS image sensor, and obtaining the minimum control signal pulse width delta T of the global shutter type CMOS image sensor according to a data manual 1 Minimum transfer period DeltaT 2 And an image readout time DeltaT 3 ；
Step 2, setting target exposure time delta T of the image acquired by the global shutter type CMOS image sensor according to the time resolution requirement of the imaging target exp ；
Step 3, before the exposure starting time signal comes, enabling the global shutter type CMOS image sensor to be in a zero clearing reset state;
step 4, marking the exposure starting time as T 0 At T 0 At moment, the global shutter type CMOS image sensor starts image exposure, and induced charges corresponding to the image are transferred from the pixel photosensitive region to the pixel floating grid;
step 5, let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the induced charge transfer corresponding to the image is finished, the global shutter type CMOS image sensor finishes the image exposure, and the pixel signal reading circuit starts to read the exposure time to be delta T exp Is a digital image of the image data;
step 6, let T 2 ＝T 1 +ΔT 3 At T 2 At the moment, the image data is read out completely, the single high-time resolution image is acquired completely, the step 3 is returned to, and the acquisition of the next frame of high-time resolution image is started until the acquisition of the high-time resolution image is completed.
Further, in step 1, a pixel photosensitive area of the global shutter type CMOS image sensor is provided with a photosensitive area reset control terminal for connecting a photosensitive area reset control signal; the pixel floating gate is provided with a transfer control end and a floating gate reset control end between the floating gate and the photosensitive region, and the transfer control end and the floating gate reset control end are respectively used for connecting a transfer control signal and a floating gate reset control signal;
the photosensitive area reset control signal, the connection transfer control signal and the floating grid reset control signal are all independent control signals.
Further, the step 3 specifically includes:
before the exposure start time signal comes, the photosensitive region reset control signal and the floating gate reset control signal are kept open, and the target exposure time DeltaT is judged exp And the pulse width delta T of the minimum control signal 1 Minimum transfer period DeltaT 2 Is of a size of (2);
if DeltaT exp ＜MAX(ΔT 1 ，ΔT 2 ) Keeping a transfer control signal between the floating gate and the photosensitive region open; if DeltaT exp ≥MAX(ΔT 1 ，ΔT 2 ) Keeping the transfer control signal between the floating gate and the photosensitive region on or off; before the exposure start time signal arrives, if the target exposure time DeltaT exp Is greater than the minimum control signal pulse width deltat 1 And a minimum transfer period DeltaT 2 The switching on and off of the transfer control signal between the floating gate and the photosensitive region does not affect the transfer of the induced charge.
Further, the step 4 specifically includes:
let the exposure start time be T 0 At T 0 At the moment, the reset control signal of the photosensitive area and the reset control signal of the floating grid are closed, and image exposure is started; and the transfer control signal between the floating gate and the photosensitive region is turned on to transfer the induced charges corresponding to the image from the pixel photosensitive region to the pixel floating gate.
Further, the step 5 specifically includes:
let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the induced charge transfer corresponding to the image is finished, a transfer control signal between the floating gate and the photosensitive region is closed, a reset control signal of the photosensitive region is opened to clear residual charges of the photosensitive region of the pixel, and the reset control signal of the floating gate is kept closed; the global shutter type CMOS image sensor finishes image exposure, and the pixel signal reading-out circuit starts reading-out exposure time to be delta T exp Is described.
Further, in step 1, a pixel floating gate of the global shutter type CMOS image sensor is provided with a transfer control terminal and a floating gate reset control terminal between the floating gate and the photosensitive region, which are respectively used for connecting a transfer control signal and a floating gate reset control signal;
the transfer control signal and the floating gate reset control signal between the floating gate and the photosensitive region are independent control signals.
Further, the step 3 specifically includes:
before the exposure starting time signal comes, a transfer control signal and a floating gate reset control signal between the floating gate and the photosensitive region are kept open, so that the global shutter type CMOS image sensor is in a zero clearing reset state.
Further, the step 4 specifically includes:
let the exposure start time be T 0 At T 0 At the moment, closing a floating gate reset control signal and starting image exposure; and the transfer control signal between the floating gate and the photosensitive region is kept on, so that the induced charges corresponding to the image are transferred from the pixel photosensitive region to the pixel floating gate.
Further, the step 5 specifically includes:
let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the transfer of the induced charges corresponding to the image is finished, the transfer control signal between the floating gate and the photosensitive region is closed, the floating gate reset control signal is kept closed, the image exposure is finished, and the pixel signal reading circuit starts to read the exposure time to be delta T exp Is described.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the high-time resolution image acquisition method based on the global shutter type CMOS image sensor provided by the invention utilizes the pixel structure characteristics of the global shutter type CMOS image sensor to carry out special driving time sequence design, and the required driving system is simple, the improvement cost is lower, and the time resolution capability of an imaging system can be obviously improved on the premise of not increasing the complexity and the cost of the system;
2. the high-time resolution image acquisition method based on the global shutter type CMOS image sensor can realize extremely short exposure time, so that a high-time resolution imaging system does not need to rely on the optical shutter function of an MCP image enhancer, and the spatial resolution capability of the imaging system is effectively improved;
3. the high-time resolution image acquisition method based on the global shutter type CMOS image sensor provided by the invention can be used for acquiring the high-time resolution image according to an imaging targetTime resolution requirements, flexible adjustment of the exposure time DeltaT of an image exp The exposure time is not limited by the minimum pulse width limitation of the sensor control signal any more, the ultra-high time resolution image acquisition with the minimum nanosecond magnitude can be realized, and the application range is wide.
Drawings
FIG. 1 is a diagram showing a pixel characteristic structure of a global shutter type CMOS image sensor used in a first embodiment of a method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to the present invention;
FIG. 2 is a flowchart of a method for obtaining a high-time resolution image based on a global shutter CMOS image sensor according to an embodiment of the present invention;
FIG. 3 is a diagram showing a pixel characteristic structure of a global shutter type CMOS image sensor used in a second embodiment of a method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to the present invention;
FIG. 4 is a flowchart of a second embodiment of a method for obtaining a high-time resolution image based on a global shutter CMOS image sensor;
the reference numerals are explained as follows:
the pixel circuit comprises a 1-pixel photosensitive region, a 2-pixel floating gate, a 3-pixel signal reading circuit, an A-photosensitive region reset control signal, a transfer control signal between a B-floating gate and the photosensitive region, a C-floating gate reset control signal and a D-pixel signal reading control signal.
Detailed Description
To make the objects, advantages and features of the present invention more apparent, a method for acquiring a high-time resolution image based on a global shutter type CMOS image sensor according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Example 1
A high time resolution image acquisition method based on a global shutter type CMOS image sensor, comprising the steps of:
step 1, selecting a global shutter type CMOS image sensor with a 5T pixel characteristic structure shown in FIG. 1, and obtaining the global shutter type CMOS image sensor according to a data manualIs a minimum control signal pulse width deltat 1 Minimum transfer period DeltaT 2 Image reading time DeltaT 3 . The pixel photosensitive region 1 of the global shutter type CMOS image sensor is provided with a photosensitive region reset control end which is used for being connected with a photosensitive region reset control signal A; the pixel floating gate 2 is provided with a transfer control terminal and a floating gate reset control terminal between the floating gate and the photosensitive region, and is respectively used for connecting a transfer control signal B and a floating gate reset control signal C. The photosensitive region reset control signal A, the transfer control signal B between the floating gate and the photosensitive region and the floating gate reset control signal C are independent control signals.
Step 2, setting target exposure time delta T of the image acquired by the global shutter type CMOS image sensor according to the time resolution requirement of the imaging target exp 。ΔT exp And the pulse width delta T of the minimum control signal 1 Minimum transfer period DeltaT 2 Image reading time DeltaT 3 Irrespective of the fact that the first and second parts are.
According to the flow chart shown in fig. 2, step 3-step 6 are performed, and the driving system is used to control the opening and closing of the photosensitive area reset control signal a, the transfer control signal B between the floating gate and the photosensitive area, and the floating gate reset control signal C, wherein the bottom color is dark gray, the bottom color is in an open state, and the bottom color is light gray.
And step 3, before the exposure starting time signal comes, enabling the pixel photosensitive area 1 of the global shutter type CMOS image sensor to be in a zero clearing reset state. Keeping the photosensitive region reset control signal A and the floating gate reset control signal C open, and judging the target exposure time DeltaT exp And the pulse width delta T of the minimum control signal 1 Minimum transfer period DeltaT 2 Is of a size of (a) and (b). If DeltaT exp ＜MAX(ΔT 1 ，ΔT 2 ) Keeping the transfer control signal B between the floating gate and the photosensitive region open; if DeltaT exp ≥MAX(ΔT 1 ，ΔT 2 ) The transfer control signal B between the floating gate and the photosensitive region is kept on or off.
Step 4, marking the exposure starting time as T 0 At T 0 At the moment, the photosensitive area reset control signal A and the floating gate reset control signal C are closed, and the global shutter type CMOS image sensor starts to perform image exposure; and the transfer control signal B between the floating gate and the photosensitive region is turned on, the global shutter type CMOS image sensor starts transferring the induced charges corresponding to the image from the pixel photosensitive region 1 to the pixel floating gate 2.
Step 5, let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the induced charge transfer corresponding to the image is finished, a transfer control signal B between the floating gate and the photosensitive region is closed, a photosensitive region reset control signal A is opened to clear residual charges in the pixel photosensitive region 1, a floating gate reset control signal C is kept closed, the global shutter type CMOS image sensor finishes the image exposure, and a pixel signal reading circuit 3 starts to read out the exposure time to be delta T exp Is described.
Step 6, let T 2 ＝T 1 +ΔT 3 At T 2 At the moment, the image data is read out completely, the single high-time resolution image is acquired completely, the step 3 is returned to, and the acquisition of the next frame of high-time resolution image is started until the acquisition of the high-time resolution image is completed.
Example two
A high time resolution image acquisition method based on a global shutter type CMOS image sensor, comprising the steps of:
step 1, selecting a global shutter type CMOS image sensor with a 4T full pixel characteristic structure as shown in FIG. 3, and obtaining the minimum control signal pulse width delta T of the global shutter type CMOS image sensor according to a data manual 1 Minimum transfer period DeltaT 2 Image reading time DeltaT 3 . The pixel floating gate 2 of the global shutter type CMOS image sensor is provided with a transfer control end and a floating gate reset control end between the floating gate and the photosensitive area, and the transfer control end and the floating gate reset control end are respectively used for connecting a transfer control signal B and a floating gate reset control signal C between the floating gate and the photosensitive area. The transfer control signal B and the floating gate reset control signal C between the floating gate and the photosensitive region are independent control signals.
Step 2, according to the imaging purposeTarget time resolution requirement, target exposure time delta T of global shutter type CMOS image sensor acquired image is set exp 。ΔT exp And the pulse width delta T of the minimum control signal 1 Minimum transfer period DeltaT 2 Image reading time DeltaT 3 Irrespective of the fact that the first and second parts are.
According to the flowchart shown in fig. 4, steps 3-6 are performed, and the driving system controls the switching on and off of the transfer control signal B and the floating gate reset control signal C between the floating gate and the photosensitive region, wherein the signal representing dark gray is in the on state.
And 3, before the exposure starting time signal comes, keeping the transfer control signal B and the floating gate reset control signal C between the floating gate and the photosensitive region to be opened, so that the global shutter type CMOS image sensor is in a zero clearing reset state.
Step 4, marking the exposure starting time as T 0 At T 0 At the moment, the floating gate reset control signal C is closed, and the global shutter type CMOS image sensor starts to perform image exposure; and keeps the transfer control signal B between the floating gate and the photosensitive region open, the global shutter type CMOS image sensor starts transferring the induced charges corresponding to the image from the pixel photosensitive region 1 to the pixel floating gate 2.
Step 5, let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the induced charge transfer corresponding to the image is finished, the transfer control signal B between the floating gate and the photosensitive region is closed, the floating gate reset control signal C is kept closed, the global shutter type CMOS image sensor finishes the image exposure, and the pixel signal reading circuit 3 starts to read the exposure time to be delta T exp Is described.
Step 6, let T 2 ＝T 1 +ΔT 3 At T 2 At the moment, the image data is read out completely, the single high-time resolution image is acquired completely, the step 3 is returned to, and the acquisition of the next frame of high-time resolution image is started until the acquisition of the high-time resolution image is completed.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced with equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (9)

1. A high time resolution image acquisition method based on a global shutter type CMOS image sensor, comprising the steps of:
step 1, selecting a global shutter type CMOS image sensor, and obtaining the minimum control signal pulse width delta T of the global shutter type CMOS image sensor according to a data manual 1 Minimum transfer period DeltaT 2 And an image readout time DeltaT 3 ；
Step 2, setting target exposure time delta T of the image acquired by the global shutter type CMOS image sensor according to the time resolution requirement of the imaging target exp ；
Step 3, before the exposure starting time signal comes, enabling the global shutter type CMOS image sensor to be in a zero clearing reset state;
step 4, marking the exposure starting time as T 0 At T 0 At the moment, the global shutter type CMOS image sensor starts image exposure, and induced charges corresponding to the image are transferred from the pixel photosensitive region (1) to the pixel floating grid (2);
step 5, let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the induced charge transfer corresponding to the image is finished, the global shutter type CMOS image sensor finishes the image exposure, and the pixel signal reading circuit (3) starts reading the exposure time to be delta T exp Is a digital image of the image data;
step 6, let T 2 ＝T 1 +ΔT 3 At T 2 At the moment, after the image data is read out, the single high-time-resolution image is acquired, the step 3 is returned to, and the acquisition of the next frame of high-time-resolution image is started until the acquisition of the high-time-resolution image is completedAnd (5) after that.
2. The high-time-resolution image acquisition method based on a global shutter type CMOS image sensor according to claim 1, wherein: in the step 1, a pixel photosensitive area (1) of the global shutter type CMOS image sensor is provided with a photosensitive area reset control end which is used for being connected with a photosensitive area reset control signal; the pixel floating gate (2) is provided with a transfer control end and a floating gate reset control end between the floating gate and the photosensitive region, and the transfer control end and the floating gate reset control end are respectively used for connecting a transfer control signal and a floating gate reset control signal;
the photosensitive area reset control signal, the connection transfer control signal and the floating grid reset control signal are all independent control signals.
3. The method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to claim 2, wherein the step 3 is specifically:
before the exposure start time signal comes, the photosensitive region reset control signal and the floating gate reset control signal are kept open, and the target exposure time DeltaT is judged exp And the pulse width delta T of the minimum control signal 1 Minimum transfer period DeltaT 2 Is of a size of (2);
if DeltaT exp ＜MAX(ΔT 1 ，ΔT 2 ) Keeping a transfer control signal between the floating gate and the photosensitive region open; if DeltaT exp ≥MAX(ΔT 1 ，ΔT 2 ) The transfer control signal between the floating gate and the photosensitive region is kept on or off.
4. The method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to claim 3, wherein the step 4 specifically comprises:
let the exposure start time be T 0 At T 0 At the moment, the reset control signal of the photosensitive area and the reset control signal of the floating grid are closed, and image exposure is started; and the transfer control signal between the floating grid and the photosensitive region is turned on to pair the imagesThe corresponding induced charge is transferred from the pixel photosensitive region (1) to the pixel floating gate (2).
5. The method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to claim 4, wherein the step 5 specifically comprises:
let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the induced charge transfer corresponding to the image is finished, a transfer control signal between the floating gate and the photosensitive region is closed, a reset control signal of the photosensitive region is opened to clear residual charges of the photosensitive region of the pixel, and the reset control signal of the floating gate is kept closed; the global shutter CMOS image sensor finishes the image exposure, and the pixel signal reading circuit (3) starts reading exposure time delta T exp Is described.
6. The high-time-resolution image acquisition method based on a global shutter type CMOS image sensor according to claim 1, wherein: in step 1, a pixel floating gate (2) of the global shutter type CMOS image sensor is provided with a transfer control end and a floating gate reset control end between the floating gate and a photosensitive region, which are respectively used for connecting a transfer control signal and a floating gate reset control signal;
the transfer control signal and the floating gate reset control signal between the floating gate and the photosensitive region are independent control signals.
7. The method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to claim 6, wherein the step 3 specifically comprises:
before the exposure starting time signal comes, a transfer control signal and a floating gate reset control signal between the floating gate and the photosensitive region are kept open, so that the global shutter type CMOS image sensor is in a zero clearing reset state.
8. The method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to claim 7, wherein the step 4 is specifically:
let the exposure start time be T 0 At T 0 At the moment, closing a floating gate reset control signal and starting image exposure; and keeps the transfer control signal between the floating gate and the photosensitive region open, and transfers the induced charge corresponding to the image from the pixel photosensitive region (1) to the pixel floating gate (2).
9. The method for obtaining a high-time resolution image based on a global shutter type CMOS image sensor according to claim 8, wherein the step 5 specifically comprises:
let T 1 ＝T 0 +ΔT exp At T 1 At the moment, the transfer of the induced charges corresponding to the image is ended, the transfer control signal between the floating gate and the photosensitive region is closed, the floating gate reset control signal is kept closed, the image exposure is ended, and the pixel signal reading circuit (3) starts to read the exposure time to be delta T exp Is described.
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US20080044170A1 (en) * 2006-08-16 2008-02-21 Choon Hwee Yap Image Capturing System And Method Of Operating The Same
CN102740009A (en) * 2012-07-16 2012-10-17 上海中科高等研究院 Image sensor and pixel reading method thereof
CN105681690A (en) * 2016-03-10 2016-06-15 长春长光辰芯光电技术有限公司 Global shutter control method for double-transfer-gate high dynamic range image sensor pixel
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