CN110062181B - Ultra-high-speed double-frame image acquisition method based on global shutter type CMOS image sensor - Google Patents
Ultra-high-speed double-frame image acquisition method based on global shutter type CMOS image sensor Download PDFInfo
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- CN110062181B CN110062181B CN201910394714.8A CN201910394714A CN110062181B CN 110062181 B CN110062181 B CN 110062181B CN 201910394714 A CN201910394714 A CN 201910394714A CN 110062181 B CN110062181 B CN 110062181B
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Abstract
The invention provides an ultrahigh-speed double-frame image acquisition method based on a global shutter type CMOS image sensor, which aims to solve the technical problems that the time resolution of the existing high-speed imaging system adopting the CMOS image sensor is low, or a special high-speed imaging system adopting the combination of the CMOS and the CCD process is complex and high in cost. The invention realizes the functions of ultra-short exposure and ultra-short time interval continuous double-frame image acquisition by utilizing the independent control signals and circuit structures of the photosensitive region and the floating grid of the global shutter type CMOS image sensor and through the associated control of the photosensitive region and the floating grid.
Description
Technical Field
The invention relates to a super-high-speed double-frame image acquisition method of a CMOS image sensor.
Background
High-speed cameras based on image sensors are widely used in the field of transient physical process research. There are two main types of image sensors commonly used at present: CCD image sensors and CMOS image sensors. The CMOS image sensor has good compatibility with an analog circuit and a large-scale digital circuit, so that the functions of high-precision quantification, high-speed sampling output and the like can be conveniently realized in the sensor.
CMOS image sensors are broadly classified into global shutter type, rolling shutter type, and hybrid shutter type according to the reset and exposure control signal characteristics of their pixel arrays, in which: a global shutter type CMOS image sensor generally has control signals for simultaneously exposing and simultaneously resetting all pixels in a pixel array; the rolling shutter type CMOS image sensor intelligently performs uniform exposure and reset control on the pixels in the same row; the hybrid shutter type CMOS image sensor has an exposure control signal for unifying pixel arrays, and can start exposure of the pixel arrays at the same time, but the time for ending exposure of pixels in each row is different, and the reset signal is row reset.
In the field of high speed imaging, imaging systems between 1000 frames per second and 100 ten thousand frames per second are commonly referred to as high speed imaging systems, with exposure times or frame intervals between 1ms and 1 μ s; imaging systems with imaging speeds greater than 100 ten thousand frames per second are referred to as ultra-high speed imaging systems, with exposure times or frame intervals less than 1 μ s. The highest frame frequency of the high-speed imaging system adopting the CMOS image sensor is mostly between tens of thousands of frames and hundreds of thousands of frames per second at present, and although a few special high-speed imaging systems adopting the combination of the CMOS and the CCD process can reach the speed of more than million frames per second, the special high-speed imaging system has the disadvantages of high cost, complex system, great technical difficulty and difficult realization.
Disclosure of Invention
The invention provides an ultrahigh-speed double-frame image acquisition method based on a global shutter type CMOS image sensor, which aims to solve the technical problems that the time resolution of the existing high-speed imaging system adopting the CMOS image sensor is low, or a special high-speed imaging system adopting the combination of the CMOS and the CCD process is complex and high in cost.
The principle of the invention is as follows:
the invention realizes the functions of ultra-short exposure and ultra-short time interval continuous double-frame image acquisition by utilizing the independent control signals and circuit structures of the photosensitive region and the floating grid of the global shutter type CMOS image sensor and through the associated control of the photosensitive region and the floating grid.
The technical solution of the invention is as follows:
the super-high-speed double-frame image acquisition method based on the global shutter type CMOS image sensor comprises the following steps of:
a global shutter type CMOS image sensor is selected, and pixels of the global shutter type CMOS image sensor have the following characteristic control signals: a photosensitive region reset control signal A, a transfer control signal B between a floating gate and the photosensitive region, and a floating gate reset control signal C; obtaining the critical time parameters of the selected CMOS image sensor according to the data manual thereof, including the minimum control signal pulse width Delta T1Minimum transfer period Δ T2A frame image readout time DeltaT3；
Setting the minimum exposure time T of the first frame image according to the key time parameter of the CMOS image sensor and the time resolution requirement of the imaging targetEXPAnd an exposure interval time T of two frame imagesINTAnd T isEXPNot less than Δ T1+ Δ T2, TINTNot less than Δ T1;
before an external trigger signal arrives, keeping the CMOS image sensor in a photosensitive area clear state, keeping a photosensitive area reset control signal A open, and closing a transfer control signal B and a floating gate reset control signal C between a floating gate and the photosensitive area;
turning off a photosensitive area reset control signal A at the arrival time T0 of the trigger signal, starting the exposure of a first frame image by the CMOS image sensor, and simultaneously turning on a floating gate reset control signal C to clear an invalid charge signal of a floating gate of a pixel, wherein in the process, a transfer control signal B between the floating gate and the photosensitive area is always kept off;
turning off the floating gate reset control signal C at the time of T1, simultaneously turning on the transfer control signal B between the floating gate and the photosensitive region, and starting to transfer the charge signal corresponding to the first frame image from the photosensitive region of the pixel to the floating gate of the pixel, wherein the photosensitive region reset control signal A is always kept off in the process; t1 ═ T0+ TEXP－ΔT2；
6 ] at time T2, firstEnding charge transfer of photosensitive region corresponding to frame image, turning off transfer control signal B between floating gate and photosensitive region, turning on photosensitive region reset control signal A, stopping exposure of first frame image, and making exposure time of first frame image be TEXPThe image of (1) starts to be read out, and the floating gate reset control signal C is always kept closed in the process; t2 ═ T1+ Δ T2;
at time T3, turning off the photosensitive region reset control signal a, starting the exposure of the CMOS image sensor for the second frame of image, and keeping both the transfer control signal B and the floating gate reset control signal C between the floating gate and the photosensitive region off during this process; t3 ═ T2+ Δ T1;
at time T4, after the first frame of image data is completely read, turning on the floating gate reset control signal C to remove the invalid charge signal of the floating gate, and keeping the photosensitive region reset control signal a and the transfer control signal B between the floating gate and the photosensitive region off during this process; t4 ═ T2+ Δ T3;
turning off the floating gate reset control signal C at the time of T5, simultaneously turning on the transfer control signal B, and starting to transfer the induced charge signal corresponding to the second frame image from the photosensitive area of the pixel to the floating gate of the pixel, wherein the photosensitive area reset control signal A is kept off in the process; t5 ═ T4+ Δ T1;
10, at the time T6, the charge transfer of the photosensitive area corresponding to the second frame image is finished, the transfer control signal B between the floating gate and the photosensitive area is turned off, and in the process, the photosensitive area reset control signal a and the floating gate reset control signal C are kept turned off; t6 ═ T5+ Δ T2;
at the time T7, the reading of the second frame image data is finished, and the acquisition process of the single ultra-high-speed double-frame image is finished; t7 ═ T6+ Δ T3.
Further, the image sensor selected in the step 1 is a global shutter type CMOS image sensor with more than five transistors, and a pixel structure of the CMOS image sensor has independent reset control signals of a photosensitive region and a floating gate.
Further, step 2 ] TEXPEqual to Δ T1+ Δ T2.
Further, step 2 ] TINTEqual to at 1.
The invention has the beneficial effects that:
1. the invention utilizes the pixel structure characteristics of the global shutter type CMOS image sensor to carry out special driving time sequence design, can obviously improve the time resolution capability of an imaging system on the premise of not increasing the complexity and the cost of the system, and has simple driving system and lower improvement cost.
2. The invention can be conveniently combined with the MCP image intensifier to form an ICMOS system with sub-microsecond interval and nanosecond time resolution double-frame image acquisition capability, and the method can effectively improve the single-channel image acquisition capability of the ICMOS system.
3. The invention can flexibly adjust the minimum exposure time T of the first frame of ultra-short exposure image according to the requirement of the imaging target on time resolution in the application processEXPAnd an exposure interval time T between the first frame and the second frameINTThe method can realize high-speed double-frame image acquisition from submicroseconds to milliseconds, and has wide application range.
4. On the premise of not adopting complex system design technologies such as optical framing and the like, the method realizes the acquisition of images at sub-microsecond intervals based on the characteristic that the signal transfer time of a photosensitive area of a pixel of a common CMOS image sensor is about one hundred nanoseconds, and can effectively improve the ultrahigh-speed image acquisition capability of a single sensor system without increasing the cost of an imaging system.
Drawings
Fig. 1 is a block diagram of a global shutter type CMOS image sensor pixel feature employed in an embodiment of the present invention.
FIG. 2 is a timing diagram of the process of the present invention in which the gray fill portion indicates that the signal is on.
The reference numbers in FIG. 1 illustrate:
1-pixel photosensitive region, 2-pixel floating gate, 3-pixel signal readout circuit, A-photosensitive region reset control signal, B-transfer control signal between floating gate and photosensitive region, C-floating gate reset control signal, and D-pixel signal readout control signal.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 2, the method for acquiring an ultra-high speed dual-frame image based on a global shutter CMOS image sensor provided in this embodiment specifically includes the following steps:
step 1: selecting a global shutter type CMOS image sensor with a pixel structure as shown in FIG. 1, and obtaining key time parameters of the CMOS image sensor according to a data manual of the CMOS image sensor, including a minimum control signal pulse width Delta T1Minimum transfer period Δ T2A frame image readout time DeltaT3；
Step 2: setting the minimum exposure time T of the first frame image according to the key time parameter of the CMOS image sensor and the time resolution requirement of the imaging targetEXPAnd an exposure interval time T of two frame imagesINTAnd T isEXPNot less than Δ T1+ Δ T2, TINTNot less than Δ T1;
and step 3: before an external trigger signal arrives, keeping a pixel photosensitive area 1 of the CMOS image sensor in a zero clearing state, keeping a photosensitive area reset control signal A open, and closing a transfer control signal B and a floating gate reset control signal C between a floating gate and the photosensitive area;
and 4, step 4: at the arrival time T0 of the trigger signal, the photosensitive area reset control signal A is closed, the CMOS image sensor starts the exposure of the first frame image, simultaneously the floating gate reset control signal C is opened, the invalid charge signal of the floating gate of the pixel is cleared, and in the process, the transfer control signal B between the floating gate and the photosensitive area is always kept closed;
and 5: at time T1, after the pixel floating gate charge is cleared, the floating gate reset control signal C is turned off, and at the same time, the transfer control signal B between the floating gate and the photosensitive region is turned on, and the induced charge signal corresponding to the first frame image starts to be transferred from the pixel photosensitive region 1 to the pixel floating gate 2, and the photosensitive region reset control signal a is always turned off in this process; t1 ═ T0+ TEXP－ΔT2；
Step 6: at time T2, the charge transfer of the photosensitive region corresponding to the first image frame is completed, and the floating gate is turned offThe transfer control signal B between the photosensitive areas turns on the photosensitive area reset control signal A, stops the exposure of the first frame image, and the pixel signal read-out circuit 3 starts to expose the first frame for a time TEXPThe floating gate reset control signal C is always kept off during the image reading of (1); t2 ═ T1+ Δ T2;
and 7: at time T3, turning off the photosensitive region reset control signal a, the CMOS image sensor starts exposure of the second frame of image, during which the transfer control signal B and the floating gate reset control signal C between the floating gate and the photosensitive region are both kept off; t3 ═ T2+ Δ T1;
and 8: at time T4, after the first frame of image data is completely read, preparing to start the transfer and reading of the second frame of image, turning on the floating gate reset control signal C, and removing the invalid charge signal of the floating gate of the pixel, during which the photosensitive area reset control signal a and the transfer control signal B between the floating gate and the photosensitive area are kept off; t4 ═ T2+ Δ T3;
and step 9: at time T5, after the ineffective charge signal of the floating gate of the pixel is removed, the floating gate reset control signal C is turned off, and at the same time, the transfer control signal B between the floating gate and the photosensitive region is turned on, and the induced charge signal corresponding to the second frame image starts to be transferred from the photosensitive region 1 of the pixel to the floating gate 2 of the pixel, and the photosensitive region reset control signal a is always turned off in the process; t5 ═ T4+ Δ T1;
step 10: at time T6, the transfer of the induced charges corresponding to the second frame of image is finished, the transfer control signal B between the floating gate and the photosensitive region is turned off, in the process, the floating gate reset control signal C is kept off, and the data of the second frame of image starts to be read; t6 ═ T5+ Δ T2; whether the photosensitive area reset control signal A is started or not is determined according to whether the requirement of next ultrahigh-speed double-frame image acquisition is carried out or not;
step 11: at the time of T7, after the second frame image data is completely read, it can be determined whether to perform the next super high speed dual frame image acquisition according to the application requirements, the method is the same as above; t7 ═ T6+ Δ T3.
Claims (4)
1. The super-high-speed double-frame image acquisition method based on the global shutter type CMOS image sensor is characterized by comprising the following steps of:
a global shutter type CMOS image sensor is selected, and pixels of the global shutter type CMOS image sensor have the following characteristic control signals: the photosensitive region reset control signal A, the transfer control signal B between the floating gate and the photosensitive region, the floating gate reset control signal C, the photosensitive region reset control signal A, the transfer control signal B between the floating gate and the photosensitive region, and the floating gate reset control signal C are mutually independent and are driven by an external circuit; obtaining the critical time parameters of the selected CMOS image sensor according to the data manual thereof, including the minimum control signal pulse width Delta T1Minimum transfer period Δ T2A frame image readout time DeltaT3；
Setting the minimum exposure time T of the first frame image according to the key time parameter of the CMOS image sensor and the time resolution requirement of the imaging targetEXPAnd an exposure interval time T of two frame imagesINTAnd T isEXPNot less than Δ T1+ Δ T2, TINTNot less than Δ T1;
before an external trigger signal arrives, keeping the CMOS image sensor in a photosensitive area clear state, keeping a photosensitive area reset control signal A open, and closing a transfer control signal B and a floating gate reset control signal C between a floating gate and the photosensitive area;
turning off a photosensitive area reset control signal A at the arrival time T0 of the trigger signal, starting the exposure of a first frame image by the CMOS image sensor, and simultaneously turning on a floating gate reset control signal C to clear an invalid charge signal of a floating gate of a pixel, wherein in the process, a transfer control signal B between the floating gate and the photosensitive area is always kept off;
turning off the floating gate reset control signal C at the time of T1, simultaneously turning on the transfer control signal B between the floating gate and the photosensitive region, and starting to transfer the charge signal corresponding to the first frame image from the photosensitive region of the pixel to the floating gate of the pixel, wherein the photosensitive region reset control signal A is always kept off in the process; t1 ═ T0+ TEXP－ΔT2；
At time T2,ending the charge transfer of the photosensitive region corresponding to the first frame image, turning off the transfer control signal B between the floating gate and the photosensitive region, turning on the photosensitive region reset control signal A, and stopping the exposure of the first frame image, wherein the exposure time of the first frame is TEXPThe image of (1) starts to be read out, and the floating gate reset control signal C is always kept closed in the process; t2 ═ T1+ Δ T2;
at time T3, turning off the photosensitive region reset control signal a, starting the exposure of the CMOS image sensor for the second frame of image, and keeping both the transfer control signal B and the floating gate reset control signal C between the floating gate and the photosensitive region off during this process; t3 ═ T2+ Δ T1;
at time T4, after the first frame of image data is completely read, turning on the floating gate reset control signal C to remove the invalid charge signal of the floating gate, and keeping the photosensitive region reset control signal a and the transfer control signal B between the floating gate and the photosensitive region off during this process; t4 ═ T2+ Δ T3;
turning off the floating gate reset control signal C at the time of T5, simultaneously turning on the transfer control signal B, and starting to transfer the induced charge signal corresponding to the second frame image from the photosensitive area of the pixel to the floating gate of the pixel, wherein the photosensitive area reset control signal A is kept off in the process; t5 ═ T4+ Δ T1;
10, at the time T6, the charge transfer of the photosensitive area corresponding to the second frame image is finished, the transfer control signal B between the floating gate and the photosensitive area is turned off, in the process, the photosensitive area reset control signal a and the floating gate reset control signal C are kept off, and the second frame image data starts to be read; t6 ═ T5+ Δ T2;
at the time T7, the reading of the second frame image data is finished, and the acquisition process of the single ultra-high-speed double-frame image is finished; t7 ═ T6+ Δ T3.
2. The ultra high speed dual frame image capturing method based on global shutter type CMOS image sensor according to claim 1, characterized in that: the image sensor selected in the step 1 is a global shutter type CMOS image sensor with more than five tubes, and a pixel structure of the CMOS image sensor is provided with independent reset control signals of a photosensitive area and a floating grid.
3. The ultra-high speed dual frame image capturing method based on global shutter type CMOS image sensor according to claim 1 or 2, characterized in that: step 2 ] TEXPEqual to Δ T1+ Δ T2.
4. The ultra high speed dual frame image capturing method based on global shutter type CMOS image sensor according to claim 1, characterized in that: step 2 ] TINTEqual to at 1.
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