CN116525397A - Plasma etching equipment - Google Patents

Plasma etching equipment Download PDF

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Publication number
CN116525397A
CN116525397A CN202310442645.XA CN202310442645A CN116525397A CN 116525397 A CN116525397 A CN 116525397A CN 202310442645 A CN202310442645 A CN 202310442645A CN 116525397 A CN116525397 A CN 116525397A
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CN
China
Prior art keywords
gas
air inlet
inlet pipeline
plasma etching
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310442645.XA
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Chinese (zh)
Inventor
张二辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Weiyun Semiconductor Technology Co ltd
Original Assignee
Shanghai Weiyun Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Weiyun Semiconductor Technology Co ltd filed Critical Shanghai Weiyun Semiconductor Technology Co ltd
Priority to CN202310442645.XA priority Critical patent/CN116525397A/en
Publication of CN116525397A publication Critical patent/CN116525397A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application provides a plasma etching apparatus, comprising: the reaction cavity comprises a main body and a top cover for sealing the main body, wherein a sealing space formed by the top cover and the main body is a cavity; a gas source for providing a reaction gas to the reaction chamber; the first end of the first air inlet pipeline is connected with the gas source, the second end of the first air inlet pipeline is connected with the center of the top cover, and the first air inlet pipeline is used for air inlet from the center of the top of the cavity; the first end of the second air inlet pipeline is connected with the gas source, the second end of the second air inlet pipeline is connected with the edge of the top cover or the side wall of the main body, and the second air inlet pipeline is used for air inlet from the edge of the cavity. The application provides a plasma etching equipment, it is simultaneously admitting air from cavity top and edge, can make the distribution and the flow of reaction intracavity plasma more stable and even, and then improves the etching homogeneity.

Description

Plasma etching equipment
Technical Field
The application relates to the technical field of semiconductors, in particular to plasma etching equipment.
Background
Inductively coupled plasma (Inductive Coupled Plasma, ICP) etching technology is an important process in semiconductor chip fabrication. The plasma etching process is performed by a plasma etcher. The plasma etching process comprises the steps of introducing etching gas, generating plasma, diffusing the plasma to the surface of a sample to be etched, diffusing the plasma on the surface to be etched, reacting the plasma with surface substances, desorbing and discharging reaction products and the like.
In the whole etching process, in order to ensure the efficiency and stability of the etching process, the plasma flow generated by etching gas in the reaction cavity needs to be ensured to be stable. At present, the flow of the plasma is guided by pumping under the reaction cavity to stabilize the flow of the plasma.
However, the existing plasma etching equipment mainly adopts middle air inlet, and after air inlet, the distribution of air in an etching cavity cannot be regulated, so that the flow of plasma is not stable and uniform. Therefore, there is a need to provide a more efficient and reliable solution to make the distribution and flow of the plasma in the reaction chamber more stable and uniform.
Disclosure of Invention
The application provides plasma etching equipment, which can enable the distribution and the flow of plasma in a reaction cavity to be more stable and uniform, thereby improving the etching uniformity.
The application provides a plasma etching apparatus, comprising: the reaction cavity comprises a main body and a top cover for sealing the main body, wherein a sealing space formed by the top cover and the main body is a cavity; a gas source for providing a reaction gas to the reaction chamber; the first end of the first air inlet pipeline is connected with the gas source, the second end of the first air inlet pipeline is connected with the center of the top cover, and the first air inlet pipeline is used for air inlet from the center of the top of the cavity; the first end of the second air inlet pipeline is connected with the gas source, the second end of the second air inlet pipeline is connected with the edge of the top cover or the side wall of the main body, and the second air inlet pipeline is used for air inlet from the edge of the cavity.
In some embodiments of the present application, the plasma etching apparatus further includes: the first end of the controller is connected with the gas source, the second end of the controller is connected with the first end of the first air inlet pipeline and the first end of the second air inlet pipeline, and the controller is used for controlling the flow ratio of the first air inlet pipeline and the second air inlet pipeline.
In some embodiments of the present application, the intake direction of the first intake conduit and the second intake conduit is configured to be controllable.
In some embodiments of the present application, the ends of the first and second air intake lines are configured to be rotatable to thereby change the direction of air intake.
In some embodiments of the present application, the ends of the first air inlet pipeline and the second air inlet pipeline are provided with swinging blades, and the air inlet direction is changed when the swinging blades swing.
In some embodiments of the present application, the plasma etching apparatus further includes: the gas monitoring device is arranged in the reaction cavity and is used for monitoring the gas flowing condition and the gas distribution condition in the reaction cavity.
In some embodiments of the present application, the plasma etching apparatus further includes: the total control center is in communication connection with the controller and the gas monitoring device, and is configured to control the controller to control the flow ratio of the first gas inlet pipeline to the second gas inlet pipeline and control the gas inlet direction of the first gas inlet pipeline to the second gas inlet pipeline according to the monitoring result of the gas monitoring device, so that the gas in the reaction cavity is distributed uniformly and the gas flow is stable.
In some embodiments of the present application, the plasma etching apparatus further includes: the first end of the air extraction pipeline is connected with the bottom of the cavity, and the second end of the air extraction pipeline is connected to the air extraction pump.
In some embodiments of the present application, the projection of the second end of the second air intake duct onto the top cover and the projection of the first end of the air exhaust duct onto the top cover are located on opposite sides of the top cover.
In some embodiments of the present application, the second air intake duct includes a plurality of second ends, and projections of the plurality of second ends onto the top cover are uniformly distributed within a quarter of a circumference of the top cover edge.
In some embodiments of the present application, the second end of the second air intake pipe extends from the top of the inner wall of the main body to the bottom of the inner wall of the main body, and the second end of the second air intake pipe is provided with a plurality of air intake holes.
In some embodiments of the present application, a first valve is disposed on the first air inlet pipe, and is used for controlling the switch of the first air inlet pipe; and a second valve is arranged on the second air inlet pipeline and used for controlling the switch of the second air inlet pipeline.
In some embodiments of the present application, the first air intake conduit and the second air intake conduit have the same inner diameter; the first air inlet pipeline and the second air inlet pipeline are made of the same material.
The application provides a plasma etching equipment, it is simultaneously admitting air from cavity top and edge, can make the distribution and the flow of reaction intracavity plasma more stable and even, and then improves the etching homogeneity.
Drawings
The following figures describe in detail exemplary embodiments disclosed in the present application. Wherein like reference numerals refer to like structure throughout the several views of the drawings. Those of ordinary skill in the art will understand that these embodiments are non-limiting, exemplary embodiments, and that the drawings are for illustration and description purposes only and are not intended to limit the scope of the present application, other embodiments may equally well accomplish the intent of the invention in this application. It should be understood that the drawings are not to scale.
Wherein:
fig. 1 is a schematic structural diagram of a plasma etching apparatus according to an embodiment of the present application;
FIG. 2 is a schematic view of the location of the projection of the second end of the second inlet duct and the first end of the suction duct onto the top cover according to some embodiments of the present application;
FIG. 3 is a schematic view of the position of the projection of the second end of the second air intake duct and the first end of the air exhaust duct on the top cover according to other embodiments of the present disclosure;
fig. 4 is a schematic structural view of a plasma etching apparatus according to other embodiments of the present application.
Detailed Description
The following description provides specific applications and requirements to enable any person skilled in the art to make and use the teachings of the present application. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the application. Thus, the present application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.
The technical scheme of the invention is described in detail below with reference to the examples and the accompanying drawings.
Fig. 1 is a schematic structural diagram of a plasma etching apparatus according to an embodiment of the present application. The structure of the plasma etching apparatus according to the embodiments of the present application will be described in detail with reference to the accompanying drawings.
Referring to fig. 1, the present application provides a plasma etching apparatus 100, comprising: a reaction chamber 110, wherein the reaction chamber 110 includes a main body 111 and a top cover 112 for closing the main body 111, and a closed space formed by the top cover 112 and the main body 111 is a chamber 113; a gas source 120 for supplying a reaction gas to the reaction chamber 110; a first gas inlet pipe 130, wherein a first end of the first gas inlet pipe 130 is connected to the gas source 120, a second end of the first gas inlet pipe 130 is connected to the center of the top cover 112, and the first gas inlet pipe 130 is used for gas inlet from the top center of the cavity 113; a second air inlet pipe 140, a first end of the second air inlet pipe 140 is connected to the gas source 120, a second end of the second air inlet pipe 140 is connected to an edge of the top cover 112 or a side wall of the main body 111 (in fig. 1, a case that a second end of the second air inlet pipe 141 is connected to the side wall of the main body 111 in other embodiments is shown in a dotted line), and the second air inlet pipe 140 is used for air inlet from an edge of the cavity.
In the technical scheme of the application, the first air inlet pipeline 130 is used for simultaneously introducing air from the top of the cavity 113 and the second air inlet pipeline 140 is used for introducing air from the edge of the cavity 113, so that the distribution and the flow of the plasma gas in the reaction cavity 110 are more stable and uniform, and the etching uniformity is improved.
With continued reference to fig. 1, in some embodiments of the present application, the plasma etching apparatus 100 further includes: and a controller 150, wherein a first end of the controller 150 is connected to the gas source 120, a second end of the controller 150 is connected to the first end of the first gas inlet pipe 130 and the first end of the second gas inlet pipe 140, and the controller 150 is configured to control a flow ratio of the first gas inlet pipe 130 to the second gas inlet pipe 140. Controlling the flow ratio of the first air inlet pipe 130 and the second air inlet pipe 140 can further stabilize and even the distribution and flow of the plasma gas in the reaction chamber 110, thereby improving the etching uniformity.
In some embodiments of the present application, the intake direction of the first intake conduit 130 and the second intake conduit 140 is configured to be controllable.
Specifically, for example, in some embodiments of the present application, the ends of the first and second intake conduits 130, 140 are configured to be rotatable to thereby change the intake direction. For example, the ends of the first and second air intake lines 130 and 140 may be connected to a joint that is universally rotatable, and the air intake direction of the air coming out of the joint is changed when the joint is rotated. The connector is configured to be capable of universal rotation on at least one plane, ensuring that the air inlet direction can be oriented to any position of the cavity 113.
Specifically, for another example, in other embodiments of the present application, the ends of the first air inlet pipe 130 and the second air inlet pipe 140 are provided with swing blades, and the swing blades change the air inlet direction when swinging. The swing fan blade may swing up and down and swing left and right, for example, to guide the air entering the first air inlet pipeline 130 and the second air inlet pipeline 140 to flow out in any direction, so as to change the air inlet direction.
In some embodiments of the present application, the plasma etching apparatus further includes: a gas monitoring device (not shown) is disposed in the reaction chamber 110 (for example, disposed on an inner wall of the main body 111 or an inner wall of the top cover 112) for monitoring a gas flow condition and a gas distribution condition in the reaction chamber 110. Since the reaction gas is continuously consumed and the product gas is continuously generated during the reaction, the gas distribution and the gas flow in the reaction chamber are constantly changed, and a gas monitoring device is required to constantly monitor and control the gas flow and the gas distribution in the reaction chamber 110. The gas monitoring device is, for example, a gas analyzer.
In some embodiments of the present application, the plasma etching apparatus further includes: a general control center (not shown in the figure) communicatively connected to the controller 150 and the gas monitoring device, the general control center being configured to control the controller to control the flow ratio of the first and second gas inlet lines 130 and 140 and to control the gas inlet direction of the first and second gas inlet lines 130 and 140 according to the monitoring result of the gas monitoring device, so that the gas distribution in the reaction chamber is uniform and the gas flow is stable.
As described above, the gas distribution and gas flow in the reaction chamber are time-varying, so that the flow ratio of the first and second gas inlet lines 130 and 140 and the gas inlet direction of the first and second gas inlet lines 130 and 140 need to be changed according to the real-time conditions to ensure that the gas in the reaction chamber is uniformly distributed and the gas flows stably at any time. For example, when the gas monitoring apparatus monitors a disturbance of the gas flow in a certain region of the reaction chamber, the gas flow in the region can be restored or stabilized by controlling the gas inlet direction of the first and second gas inlet lines 130 and 140 away from or toward the region. For another example, when the gas monitoring apparatus monitors that the reactant gas is more concentrated in a certain region, the gas inlet direction of the first and second gas inlet lines 130 and 140 may be controlled to be away from the region, so that the reactant gas in the region is reduced.
With continued reference to fig. 1, in some embodiments of the present application, the plasma etching apparatus 100 further includes: and a pumping pipeline 160, wherein a first end of the pumping pipeline 160 is connected with the bottom of the cavity 113, and a second end of the pumping pipeline 160 is connected to a pumping pump 170. The air pump 170 pumps air to the cavity 113 through the air pumping pipeline 160, so as to guide the flow of the plasma gas in the cavity 113, and further improve the flow stability and the distribution uniformity of the plasma gas in the cavity 113.
In some embodiments of the present application, the bleed air line 160 may be of the same design as the first and second air intake lines 130, 140. For example, the suction direction of the suction line 160 is also set to be adjustable. And the bleed line 160 also has a plurality of ends corresponding to the second inlet line 140.
In other embodiments of the present application, the central control center is further communicatively connected to the pump 170, and the central control center further controls the pumping power of the pump and controls the pumping direction of the pumping line 160 according to the monitoring result of the gas monitoring device.
With continued reference to fig. 1, in some embodiments of the present application, a first valve (not shown) is disposed on the first air intake pipe 130, for controlling the opening and closing of the first air intake pipe 130; the second air inlet pipe 140 is provided with a second valve (not shown) for controlling the opening and closing of the second air inlet pipe 140.
With continued reference to FIG. 1, in some embodiments of the present application, the first and second intake conduits 130, 140 have the same inner diameter; the first air intake pipe 130 and the second air intake pipe 140 are made of the same material. This arrangement can avoid a difference in gas flow rate and a difference in gas composition due to a difference in the material and inner diameter of the first and second intake pipes 130 and 140 themselves.
FIG. 2 is a schematic view of the position of the projection of the second end of the second air intake duct and the first end of the air exhaust duct on the top cover according to some embodiments of the present application.
Referring to fig. 2, the cavity 113 has a cylindrical shape, the body 111 has a cylindrical shape, and the top cover 112 has a circular shape. In some embodiments of the present application, the projection 140a of the second end of the second air intake duct 140 onto the top cover 112 and the projection 160a of the first end of the air exhaust duct 160 onto the top cover 112 are located on opposite sides of the top cover 112. The arrangement ensures that the positions of the air inlet and the air outlet of the cavity 113 are symmetrical with respect to the center of the cavity 113, so that the flow stability and the distribution uniformity of the plasma gas in the cavity 113 can be further improved.
FIG. 3 is a schematic view of the projection positions of the second end of the second air intake pipe and the first end of the air exhaust pipe on the top cover according to other embodiments of the present disclosure.
Referring to fig. 3, in some embodiments of the present application, the second air inlet duct 140 includes a plurality of second ends, and projections 140a of the plurality of second ends on the top cover 112 are uniformly distributed within a quarter of a circumference of an edge of the top cover 112. That is, the angle of the fan shape where the projections 140a of the second ends on the top cover 112 are located is less than or equal to 90 degrees.
Fig. 4 is a schematic structural view of a plasma etching apparatus according to other embodiments of the present application.
Referring to fig. 4, in other embodiments of the present application, the second end of the second air intake pipe 140 extends from the top of the inner wall of the main body 111 to the bottom of the inner wall of the main body 111, and the second end of the second air intake pipe 140 is provided with a plurality of air intake holes 142. The horizontal air intake through the plurality of air intake holes 142 can further improve the flow stability and distribution uniformity of the plasma gas in the cavity 113.
In the technical scheme of the application, the gas flowing into the etching cavity 113 from the process gas system (the gas source 120) enters the top center and the edge part of the etching cavity 113 through the first air inlet pipeline 130 and the second air inlet pipeline 140 respectively by the double-position flow controller 150 before entering the cavity 113, and the process gas distribution in the etching cavity is controlled by controlling the gas flow percentage and the flow of the edge air inlet and the middle air inlet, so that the etching uniformity of the wafer is regulated.
The application provides a plasma etching equipment, from cavity top and edge admitting air simultaneously and through the air inlet flow of controller control top and edge, can make the distribution and the flow of reaction intracavity plasma more stable and even, and then improve etching uniformity.
In view of the foregoing, it will be evident to those skilled in the art after reading this application that the foregoing application may be presented by way of example only and may not be limiting. Although not explicitly described herein, those skilled in the art will appreciate that the present application is intended to embrace a variety of reasonable alterations, improvements and modifications to the embodiments. Such alterations, improvements, and modifications are intended to be within the spirit and scope of the exemplary embodiments of the present application.
It should be understood that the term "and/or" as used in this embodiment includes any or all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present.
It will be further understood that the terms "comprises," "comprising," "includes" or "including," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be further understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element in some embodiments could be termed a second element in other embodiments without departing from the teachings of the present application. Like reference numerals or like reference numerals designate like elements throughout the specification.
Furthermore, the present specification describes example embodiments by reference to idealized example cross-sectional and/or plan and/or perspective views. Thus, differences from the illustrated shapes, due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the exemplary embodiments.

Claims (13)

1. A plasma etching apparatus, comprising:
the reaction cavity comprises a main body and a top cover for sealing the main body, wherein a sealing space formed by the top cover and the main body is a cavity;
a gas source for providing a reaction gas to the reaction chamber;
the first end of the first air inlet pipeline is connected with the gas source, the second end of the first air inlet pipeline is connected with the center of the top cover, and the first air inlet pipeline is used for air inlet from the center of the top of the cavity;
the first end of the second air inlet pipeline is connected with the gas source, the second end of the second air inlet pipeline is connected with the edge of the top cover or the side wall of the main body, and the second air inlet pipeline is used for air inlet from the edge of the cavity.
2. The plasma etching apparatus as recited in claim 1, further comprising: the first end of the controller is connected with the gas source, the second end of the controller is connected with the first end of the first air inlet pipeline and the first end of the second air inlet pipeline, and the controller is used for controlling the flow ratio of the first air inlet pipeline and the second air inlet pipeline.
3. The plasma etching apparatus according to claim 2, wherein an air intake direction of the first air intake line and the second air intake line is configured to be controllable.
4. The plasma etching apparatus of claim 2, wherein ends of the first and second air inlet lines are configured to be rotatable to thereby change an air inlet direction.
5. The plasma etching apparatus according to claim 2, wherein the ends of the first air intake pipe and the second air intake pipe are provided with swing blades that change an air intake direction when swinging.
6. The plasma etching apparatus as recited in claim 2, further comprising: the gas monitoring device is arranged in the reaction cavity and is used for monitoring the gas flowing condition and the gas distribution condition in the reaction cavity.
7. The plasma etching apparatus as recited in claim 6, further comprising: the total control center is in communication connection with the controller and the gas monitoring device, and is configured to control the controller to control the flow ratio of the first gas inlet pipeline to the second gas inlet pipeline and control the gas inlet direction of the first gas inlet pipeline to the second gas inlet pipeline according to the monitoring result of the gas monitoring device, so that the gas in the reaction cavity is distributed uniformly and the gas flow is stable.
8. The plasma etching apparatus as recited in claim 1, further comprising: the first end of the air extraction pipeline is connected with the bottom of the cavity, and the second end of the air extraction pipeline is connected to the air extraction pump.
9. The plasma etching apparatus of claim 8, wherein a location of a projection of the second end of the second gas inlet line onto the top cover and a location of a projection of the first end of the gas exhaust line onto the top cover are located on opposite sides of the top cover.
10. The plasma etching apparatus of claim 9, wherein the second gas inlet line comprises a plurality of second ends, the projections of the plurality of second ends onto the top cover being uniformly distributed over a quarter of a circumference of the top cover edge.
11. The plasma etching apparatus of claim 1, wherein the second end of the second air intake line extends along the top of the main body inner wall to the bottom of the main body inner wall, the second end of the second air intake line being provided with a plurality of air intake holes.
12. The plasma etching apparatus according to claim 1, wherein a first valve for controlling the opening and closing of the first air intake line is provided in the first air intake line; and a second valve is arranged on the second air inlet pipeline and used for controlling the switch of the second air inlet pipeline.
13. The plasma etching apparatus according to claim 1, wherein inner diameters of the first air intake pipe and the second air intake pipe are the same; the first air inlet pipeline and the second air inlet pipeline are made of the same material.
CN202310442645.XA 2023-04-23 2023-04-23 Plasma etching equipment Pending CN116525397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310442645.XA CN116525397A (en) 2023-04-23 2023-04-23 Plasma etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310442645.XA CN116525397A (en) 2023-04-23 2023-04-23 Plasma etching equipment

Publications (1)

Publication Number Publication Date
CN116525397A true CN116525397A (en) 2023-08-01

Family

ID=87405823

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310442645.XA Pending CN116525397A (en) 2023-04-23 2023-04-23 Plasma etching equipment

Country Status (1)

Country Link
CN (1) CN116525397A (en)

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