CN207800545U - A kind of plasma processor - Google Patents
A kind of plasma processor Download PDFInfo
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- CN207800545U CN207800545U CN201820245103.8U CN201820245103U CN207800545U CN 207800545 U CN207800545 U CN 207800545U CN 201820245103 U CN201820245103 U CN 201820245103U CN 207800545 U CN207800545 U CN 207800545U
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Abstract
Utility model provides a kind of plasma processor, including：Reaction chamber, lower part includes the pedestal positioned at bottom in reaction chamber, and for substrate to be arranged above pedestal, inlet duct is additionally provided in reaction chamber；A gas distributor outside reaction chamber, including multiple input end are connected to multiple single air sources by multiple gas pipelines, and the gas distributor further includes that at least one output end is connected to the inlet duct by the first admission line；One radio-frequency power supply is connected to the pedestal；First admission line or multiple gas pipelines include tube body and connector, and the inboard wall of tube body includes one layer of organic polymer coating.
Description
Technical field
The utility model is related to plasma processing techniques fields, and in particular to a kind of gas pipeline knot of plasma reactor
Structure.
Background technology
Plasma processor is widely used in the processing of semiconductor chip, passes through the change of plasma etching or plasma asistance
Learn vapor deposition so that form the semiconductor devices of needs on wafer and connect the conducting wire of these devices, ultimately form various use
The semiconductor chip on way.Floor space by reducing semiconductor chip can be substantially come the number of chips improved on same substrate
Improve yield, while the critical size by reducing each semiconductor devices in chip（critical dimension）, also may be used
To further decrease the power consumption of chip, so no matter can band from smaller critical size for the yield of chip and the quality of chip
Carry out the economic benefit of bigger.Currently existing technology has been able to successfully realize the chip volume production that critical size is 7-14nm, still
Further decrease that critical size is just very difficult to be realized.Device and figure in above-mentioned each semiconductor chip are all by base
On piece coats a layer photoresist, and then again by litho machine, exposure on a photoresist forms required figure, then passes through photoetching
Figure on glue is the structure graph that mask etches that downwards corresponding material layer is formed in semiconductor devices.Realization further decreases
The difficulty of critical size be primarily due to currently used extreme ultraviolet wavelength can only realize 40nm or so figure development,
In order to reduce dimension of picture by various means from the figure of 40nm on photoresist or so, finally obtain on the semiconductor substrate
Less than the semiconductor devices of 7nm critical sizes, the step of needs by multiple critical dimension reductions（CD shrinkage）, crucial
The more these smaller steps of size the more complicated.If current will produce the chip that critical size is 5-3nm, entire chip processing stream
Step in journey will be significantly increased from 60 multisteps in 7-14nm periods to 100 multisteps.The increase of processing step not only increases
Cost can also put forward higher requirements the precision of each step processing, in the treatment process test process of 5-3nm critical sizes,
Original critical dimension reduction step by verifying for a long time is executed, finally has been found that the pass in the semiconductor devices that processing is formed
Key size and shape is unable to reach expected requirement.
So needing to improve existing plasma processor in the industry, in the case where air source is constant, seek at the place less than 5nm
It causes process effect the reason of deviation occur in science and engineering skill, and the band in new technique is eliminated by improving hardware design
The new problem come.
Invention content
The utility model discloses a kind of plasma processors, including：Reaction chamber, lower part includes being located at bottom in reaction chamber
Pedestal be additionally provided with inlet duct in reaction chamber for substrate to be arranged above pedestal；A gas point outside reaction chamber
Orchestration, including multiple input end are connected to multiple single air sources by multiple gas pipelines, the gas distributor further include to
A few output end is connected to the inlet duct by the first admission line；One radio-frequency power supply is connected to the pedestal；Institute
It includes tube body and connector to state the first admission line or multiple gas pipelines, and the inboard wall of tube body includes one layer of organic polymer
Coating.For the plasma processor of the utility model for being performed etching to substrate, the critical size of the figure on the substrate is small
In equal to 5nm.
Wherein organic polymer coating thickness is more than 0.5um, preferably needs to be more than 1um less than 100um.
Wherein admission line inner wall bore is less than 5mm, even less than 4mm.
The wherein described inlet duct includes mutual gas barrier first area and second area, and wherein first area is to described
Reaction gas is supplied in the central area of substrate, and second area supplies reaction gas to the fringe region of substrate.The gas distribution
Device further includes the second area that a second output terminal is connected to the inlet duct by one second admission line, and described first
Admission line is connected to the first area of the inlet duct.
The first area is the first gas nozzle at the top of reaction chamber, and second area is positioned at reaction chamber side wall
Second gas nozzle.The adjustable gas componant for flowing into the first admission line and the second admission line of the gas distributor or
Flow.
Wherein the first admission line or multiple gas pipelines include at least one turning part.
Description of the drawings
Fig. 1 is plasma processor schematic diagram of the present invention；
Fig. 2 a are gas transmission pipeline appearance diagram in the present invention；
Fig. 2 b are gas transmission pipeline port-side view in Fig. 2 a.
Specific implementation mode
Below in conjunction with attached drawing 1 ~ 2, specific embodiment of the utility model is further illustrated.
The utility model discloses a kind of plasma processors.As shown in Figure 1, the plasma processor packet of the utility model
Reaction chamber 100 is included, reaction chamber 100 forms confined space when carrying out plasma treatment, evacuates inside reaction chamber 100 so that
Substrate is handled close under vacuum state.100 lower inside of reaction chamber includes a pedestal 101, and pedestal is used as lower electricity simultaneously
Pole is connected to a radio-frequency power supply.It is additionally provided with coolant liquid circulation duct simultaneously in pedestal, base is controlled by the flowing of coolant liquid
The temperature of seat.The devices such as electrostatic chuck can also be arranged with the pending substrate of fixation 102 in pedestal top.Include anti-at the top of reaction chamber
Air inlet device 103, inlet duct is answered to be connected to a gas point by the first admission line 21 and the second admission line 22
Orchestration 20, wherein gas distributor 20 further include multiple gas entry ports by 11,12,13 ~ 1n is more distinguish by a gas pipeline
It is connected to n different types of air sources（N is the natural number more than 3）.Gas distributor 20 is received from a variety of of input port
The pure gas of pure gas, selective mixing Partial Species therein forms one or more mixed gas as reaction gas
Then body is conveyed into reaction chamber 100 by first admission line 21 in downstream and the second admission line 22.Air inlet dress in Fig. 1
Set two regions for being further divided into 103 and being mutually isolated, wherein the central area supply of first area substrate downwards
Reaction gas, second area around first area downwards substrate fringe region supply reaction gas.First admission line 21
It is connected to above-mentioned first area, the second admission line 22 is connected to second area.The reaction gas of different zones is flowed by adjusting
The adjusting to plasma treatment effect may be implemented in the flow or component difference of body.
Fig. 2 a are the enlarged drawing of admission line 21 in the utility model, and admission line 21 includes tube body 21b, tube body 21b two
End is the connector 21a being relatively large in diameter.Fig. 2 b be Fig. 2 a in side view of the admission line A at, it can be seen that connector 21a with
Include gap between tube body 21b, connector 21a inner walls or tube body 21b outer walls in gap include that screw thread and airtight construction are realized
It is fixedly connected with gentle privacy protection between different airflow pipelines.Wherein admission line in addition to that can be as shown in Figure 2 for straight tube,
Can also include one or more turning parts, to adapt to reaction chamber outer shape and installation space in plasma treatment appts
It needs.The tube body 21b inner diameters of admission line 21 are very small, typically less than 5mm.Since bore is very small in tube body, and
Turning part is also carried, so inboard wall of tube body coating protective film acquires a certain degree of difficulty, the prior art is to select stainless steel as tube body
Material realizes that admission line is etch-proof.
By inventor the study found that in various gas pipeline 11-1n and 21 shown in FIG. 1,22, in addition to main fluorine carbon
It is outer that the fluoro-gas such as compound are used as the main gas of etching that can flow through, and can be flowed through in multiple gas pipelines can corrode stainless steel
Reaction gas, illustrate the present invention by taking the first admission line 21 as an example below.These corrosive reaction gas include COS,
In plasma treatment process, these gases flow in admission line, can decompose and react generation H2S, H2SO4 with H2O etc..
In addition corrosive gas further includes the gas componant containing chlorine and bromine such as chlorine, hydrogen bromide, SiCL4, and admission line 21 is by stainless
Made of steel, these above-mentioned corrosive gas react the metal pollutant to be formed, such as some impurity particles with stainless steel inner wall
Object, the small-sized only nanoscale even Ethylmercurichlorendimide of these particulate matters（Angstrom）Grade.In addition partial reaction product is gaseous state
Substance can be quickly with reaction gas flow reach substrate surface formed pollution.The above-mentioned corrosivity gas in the treatment process more than 7nm
Body can't cause plasma treatment process significantly to influence.Do not have to the required precision of dimension of picture in prior art processes
Have it is very high, so even if thering is a small amount of contaminant particle and gas not cause to significantly affect reaching substrate surface.And it is existing
There is the processing step of technology relatively fewer, the time of processing is also short, and the probability that same substrate is contaminated object influence is also low, so
Above-mentioned contaminant particle does not influence prior art substantially.But in treatment process of the critical size less than 5nm, situation is but
Significant change has occurred, processing step is significantly increased while critical size substantially reduces, in a large amount of contaminant particles for a long time
Under the influence of, even if carrying out plasma treatment using by verifying reliable processing step for a long time, what is formed after processing partly leads
Body component graphics still cannot be satisfied the requirement of precision and contaminant particle.Inventor has found to cause after above-mentioned critical size reduces
The main reason for ion processing effect, is that reaction gas enters before reaction chamber 100, can be with pipe when being flowed in gas pipeline
Road inner wall reacts to form very important pollutant, ultimately causes 5nm treatment process below and cannot be satisfied demand.
Inventor proposes that the inner wall in above-mentioned admission line coats one layer of organic polymeric films based on above-mentioned discovery so that
Above-mentioned various corrosive gas avoid contacting with inner wall of the pipe material stainless steel.Wherein the polymer of admission line inner wall can be
Common epoxy resin or fluorine-containing polymer material.Since admission line bore is very small, and admission line further includes turning
Liquid cladding process may be used in curved part.Aqueous suspension or the dissolving for being blended with organic polymer particles are organic poly-
The organic solution of monomer adduct is fed into the admission line inner wall coated so that organic polymer or monomer grain are equal
It is even to be attached to inner wall of the pipe, then in room temperature or hot setting.Wherein room temperature curing needs that above-mentioned solution is flowed out and then dried in the air
Dry, hot setting heats after solution can be discharged, or can also be added while solution flows through admission line
Heat needs pipeline being heated to 40-200 degree.The step of flowing into and cure by above-mentioned solution can be in admission line 21
Inner wall forms one layer of organic polymer thin film, and the thickness of film is by above-mentioned solution ratio, coating time and cycle coating number
It influences, according to actual application environment unrestricted choice, the thickness of protective film is tested by inventor can form in 0.5um or more
Fine and close protective layer, effectively prevent reaction gas to react to form corrosion with inner wall of the pipe, also avoids the generation of pollutant.Compared with
Goodly, between the thickness 1-100um of protective film, protection admission line that can be long-term frequently need not be replaced or be safeguarded, and
And coating process difficulty is low, of low cost.
Above-mentioned inlet duct 103 can be discoidal, at the same as top electrode be connected to another radio-frequency power supply or
Electrical ground.Inlet duct can also be a cylindrical gas nozzle for being located at reaction chamber cap base, or be located at reaction chamber
A circle multiple gas tips of the top side wall at head cover, as long as can realize that the substrate in phase reaction chamber 103 uniformly conveys
Any air intake structure of gas can become the inlet duct of the present invention.Reaction chamber of the present invention can be capacitive coupling（CCP）
Plasma processor, external high frequency RF power source（More than 13Mhz）Apply rf electric field to inlet duct 103 and pedestal
Can also be the plasma processor of inductive coupling (ICP) between 101, inductance coil setting is led in reaction chamber over top
Head cover made of insulating materials is crossed to reaction chamber feeding high-frequency radio frequency magnetic field, and then induces alternating electric field in reaction chamber, shape
Substrate 102 is handled at plasma.So the utility model be adapted to various reaction cavity configurations and it is various into
Depressed structure.
The utility model coats one layer of organic polymer thin film by the inner wall of the pipe flowed through in reaction gas, prevents anti-
It answers the corrosive gas in gas to react to form pollutant with admission line inner-wall material, solves critical size less than 5nm's
It never finds and solves the problems, such as in treatment process, the improvement of process effect is realized with very low cost so that 5nm
Treatment process below can be more stable and reliable realization, the cost of Substrate treatment is finally greatly reduced.
Although the content of the utility model is discussed in detail by above preferred embodiment, but it should be appreciated that on
The description stated is not considered as limitations of the present invention.After those skilled in the art have read the above, for
A variety of modifications and substitutions of the utility model all will be apparent.Therefore, the scope of protection of the utility model should be by appended
Claim limit.
Claims (10)
1. a kind of plasma processor, including：
Reaction chamber, lower part includes the pedestal positioned at bottom in reaction chamber, for substrate to be arranged above pedestal, is also set up in reaction chamber
There is inlet duct；
A gas distributor outside reaction chamber, including multiple input end be connected to by multiple gas pipelines it is multiple single
Air source, the gas distributor further include that at least one output end is connected to the inlet duct by the first admission line；
One radio-frequency power supply is connected to the pedestal；
First admission line or multiple gas pipelines include tube body and connector, and the inboard wall of tube body includes one layer organic
Polymer coating.
2. plasma processor as described in claim 1, which is characterized in that the organic polymer coating thickness is more than
0.5um。
3. plasma processor as described in claim 1, which is characterized in that the admission line inner wall bore is less than 5mm.
4. plasma processor as claimed in claim 2, which is characterized in that the organic polymer coating thickness is more than 1um
Less than 100um.
5. plasma processor as described in claim 1, which is characterized in that the inlet duct includes mutual gas barrier
One region and second area, wherein first area supply reaction gas to the central area of the substrate, and second area is to substrate
Fringe region supply reaction gas.
6. plasma processor as claimed in claim 5, which is characterized in that the gas distributor further includes one second defeated
Outlet is connected to the second area of the inlet duct by one second admission line, and first admission line is connected to described
The first area of inlet duct.
7. plasma processor as claimed in claim 6, which is characterized in that the first area is at the top of reaction chamber
First gas nozzle, second area are the second gas nozzle positioned at reaction chamber side wall.
8. plasma processor as claimed in claim 6, which is characterized in that the gas distributor is adjustable flow into first into
The gas componant or flow of feed channel and the second admission line.
9. plasma processor as described in claim 1, which is characterized in that first admission line or multiple appendixs
Road includes at least one turning part.
10. plasma processor as described in claim 1, which is characterized in that the plasma processor be used for substrate into
Row etches, and the critical size of the figure on the substrate is less than or equal to 5nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820245103.8U CN207800545U (en) | 2018-02-11 | 2018-02-11 | A kind of plasma processor |
| TW107216932U TWM580795U (en) | 2018-02-11 | 2018-12-13 | Plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820245103.8U CN207800545U (en) | 2018-02-11 | 2018-02-11 | A kind of plasma processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207800545U true CN207800545U (en) | 2018-08-31 |
Family
ID=63276049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820245103.8U Active CN207800545U (en) | 2018-02-11 | 2018-02-11 | A kind of plasma processor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN207800545U (en) |
| TW (1) | TWM580795U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383886A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115400930A (en) * | 2021-05-26 | 2022-11-29 | 江苏菲沃泰纳米科技股份有限公司 | Plasma polymerization coating, preparation method and device |
-
2018
- 2018-02-11 CN CN201820245103.8U patent/CN207800545U/en active Active
- 2018-12-13 TW TW107216932U patent/TWM580795U/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383886A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
| CN111383886B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM580795U (en) | 2019-07-11 |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |