CN116516294A

CN116516294A - Film forming apparatus and film forming method

Info

Publication number: CN116516294A
Application number: CN202310017437.5A
Authority: CN
Inventors: 菅原由季; 竹见崇
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2022-01-28
Filing date: 2023-01-06
Publication date: 2023-08-01
Also published as: JP7462690B2; JP2023110493A; KR20230116697A

Abstract

The present invention relates to a film forming apparatus and a film forming method, which can inhibit the degradation of film forming quality when a plurality of layers are formed in the film forming apparatus. The film forming apparatus includes an evaporation source unit that performs film formation on a substrate while moving. The evaporation source unit includes a first evaporation source, a second evaporation source, and a third evaporation source, each of which emits a vapor deposition material. The first, second and third evaporation sources are arranged in this order in the moving direction of the evaporation source unit during film formation. The distance between the first evaporation source and the second evaporation source in the moving direction is longer than the distance between the second evaporation source and the third evaporation source in the moving direction.

Description

Film forming apparatus and film forming method

Technical Field

The present invention relates to a film forming apparatus and a film forming method.

Background

In the manufacture of an organic EL display or the like, a thin film is formed on a substrate by attaching a vapor deposition material discharged from an evaporation source to the substrate. Patent document 1 proposes vapor deposition of a plurality of vapor deposition substances on a substrate using a plurality of vapor deposition sources.

Prior art literature

Patent literature

Patent document 1: japanese patent laid-open publication 2016-196684

Disclosure of Invention

Problems to be solved by the invention

In the film forming apparatus, it is conceivable to perform multi-layer (e.g., two-layer) film formation. In such a case, it is desirable to suppress degradation of the film formation quality due to, for example, the mixture of the vapor deposition material of the first layer and the vapor deposition material of the second layer.

The present invention provides a technique for suppressing degradation of film formation quality when a multilayer film is formed in a film forming apparatus.

Means for solving the problems

According to one aspect of the present invention, there is provided a film forming apparatus including an evaporation source unit that performs film formation on a substrate while moving,

the evaporation source unit includes a first evaporation source, a second evaporation source, and a third evaporation source that emit vapor deposition materials, respectively,

the first evaporation source, the second evaporation source, and the third evaporation source are arranged in this order in the moving direction of the evaporation source unit during film formation,

the distance between the first evaporation source and the second evaporation source in the moving direction is longer than the distance between the second evaporation source and the third evaporation source in the moving direction.

In addition, according to another aspect of the present invention, there is provided a film forming apparatus including an evaporation source unit that performs film formation on a substrate while moving,

The evaporation source unit includes a first evaporation source and a second evaporation source for respectively discharging evaporation materials,

the first evaporation source and the second evaporation source are arranged in a moving direction of the evaporation source unit during film formation,

the discharge angle of the vapor deposition material from the first evaporation source is smaller than the discharge angle of the vapor deposition material from the second evaporation source when viewed from a lateral direction intersecting the moving direction.

the discharge angle of the vapor deposition material from the first evaporation source is smaller on the second evaporation source side than on the opposite side of the second evaporation source side when viewed from the lateral direction intersecting the moving direction.

In addition, according to another aspect of the present invention, there is provided a film forming method for forming a film on a substrate using the film forming apparatus.

Effects of the invention

According to the present invention, when a multilayer film is formed in a film forming apparatus, a decrease in film forming quality can be suppressed.

Drawings

Fig. 1 is a plan view schematically showing the structure of a film forming system according to an embodiment.

Fig. 2 is a plan view schematically showing the structure of a film forming apparatus according to an embodiment.

Fig. 3 is a front view of the film forming apparatus of fig. 2.

Fig. 4 is a diagram for explaining the structure of the evaporation source unit, and is a schematic view of the evaporation source unit viewed from the lateral direction.

Fig. 5 is a schematic plan view for explaining the positional relationship between the evaporation source and the monitoring device.

Fig. 6 is a diagram for explaining an arrangement structure of the evaporation source unit.

Fig. 7 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 8 is a front view schematically showing the structure of a film forming apparatus according to an embodiment.

Fig. 9 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 10 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 11 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 12 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 13 is a front view schematically showing the structure of a film forming apparatus according to an embodiment.

Fig. 14 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 15 is an operation explanatory diagram of a film forming process of the film forming apparatus.

Fig. 16 is a diagram for explaining the structure of the evaporation source unit, and is a schematic view of the evaporation source unit viewed from the lateral direction.

Fig. 17 (a) is an overall view of the organic EL display device, and (B) is a view showing a cross-sectional structure of one pixel.

Description of the reference numerals

1: film forming apparatus, 10: evaporation source units 11a to 11r: evaporation source, 100: substrate, 101: and (3) masking.

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The following embodiments do not limit the claims. Although the plurality of features are described in the embodiments, all of the plurality of features are not necessarily essential to the invention, and the plurality of features may be arbitrarily combined. In the drawings, the same or similar structures are denoted by the same reference numerals, and repetitive description thereof will be omitted.

< first embodiment >, first embodiment

(outline of film Forming System)

Fig. 1 is a plan view schematically showing the structure of a film forming system SY provided with a film forming apparatus 1 of an embodiment. The film forming system SY is a system that performs film forming processing on a substrate carried in and carries out the processed substrate. For example, a production line of electronic devices is constituted by arranging a plurality of film forming systems SY and disposing them. Examples of the electronic device include a display panel of an organic EL display device for a smart phone. The film forming system SY includes a carry-in chamber 60, a substrate carrying-in chamber 62, a carry-out chamber 64, and a mask storage chamber 66, in addition to the film forming apparatus 1. The structure of the film forming apparatus 1 will be described later.

The substrate 100 to be film-formed in the film forming apparatus 1 is carried into the carry-in chamber 60. A transfer robot 620 for transferring the substrate 100 is provided in the substrate transfer chamber 62. The transfer robot 620 transfers the substrate 100 loaded into the loading chamber 60 to the film forming apparatus 1. The transfer robot 620 transfers the substrate 100, on which the film formation process has been completed in the film formation apparatus 1, to the carry-out chamber 64. The substrate 100 transferred to the transfer chamber 64 by the transfer robot 620 is transferred from the transfer chamber 64 to the outside of the film formation system SY. In the case where a plurality of film forming systems SY are arranged in an array, the carry-out chamber 64 of the upstream film forming system SY may also serve as the substrate carrying-in chamber 62 of the downstream film forming system SY. In the mask storage chamber 66, a mask 101 for forming a film in the film forming apparatus 1 is stored. The mask 101 stored in the mask storage chamber 66 is transferred to the film forming apparatus 1 by the transfer robot 620.

The inside of the film forming apparatus 1 and each chamber constituting the film forming system SY is maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. In the present embodiment, the "vacuum" refers to a state filled with a gas having a pressure lower than the atmospheric pressure, in other words, refers to a reduced pressure state.

(film Forming apparatus)

(summary)

Fig. 2 is a plan view schematically showing the structure of the film forming apparatus 1 according to one embodiment. Fig. 3 is a front view of the film forming apparatus 1 of fig. 2. In the following figures, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates vertical directions (vertical directions).

The film forming apparatus 1 is a film forming apparatus that performs vapor deposition while moving an evaporation source relative to a substrate. The film forming apparatus 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example, and can be used in a plurality of production lines. As a material of the substrate to be vapor-deposited in the film forming apparatus 1, glass, resin, metal, or the like can be appropriately selected, and a material having a resin layer such as polyimide formed on glass is preferably used. As the vapor deposition material, an organic material, an inorganic material (metal, metal oxide, or the like), or the like can be used. The film forming apparatus 1 can be applied to, for example, a manufacturing apparatus for manufacturing electronic devices such as a display device (flat panel display or the like), a thin film solar cell, and an organic photoelectric conversion element (organic thin film image pickup element), and an optical member, and in particular, to a manufacturing apparatus for manufacturing an organic EL panel. In the present embodiment, the film forming apparatus 1 forms a film on a glass substrate (1100 mm×2500mm, 1250mm×2200 mm) of G8H size, but the size of the substrate on which the film forming apparatus 1 forms a film may be set appropriately.

The film forming apparatus 1 includes an evaporation source unit 10, a moving unit 20, and a plurality of film forming stages 30A and 30B. The evaporation source unit 10, the moving unit 20, and the film formation stages 30A and 30B are disposed in a chamber 45 that is maintained in vacuum during use. In the present embodiment, the plurality of deposition stages 30A and 30B are provided at an upper portion of the chamber 45 so as to be separated from each other in the Y direction, and the evaporation source unit 10 and the moving unit 20 are provided below the deposition stages. The chamber 45 is provided with a plurality of substrate carrying-in ports 44A and 44B for carrying in and carrying out the substrate 100.

The film forming apparatus 1 further includes a power source 41 for supplying power to the evaporation source unit 10, and an electrical connection portion 42 for electrically connecting the evaporation source unit 10 and the power source 41. The electric connection portion 42 is configured such that an electric wire passes through the inside of the movable arm in the horizontal direction, and as described later, can supply electric power from the power source 41 to the evaporation source unit 10 that moves in the XY direction.

The film forming apparatus 1 further includes a control unit 43 for controlling the operations of the respective constituent elements. For example, the control unit 43 may include a processor typified by a CPU, a memory such as a RAM or a ROM, and various interfaces. For example, the control unit 43 reads and executes a program stored in the ROM into the RAM, thereby realizing various processes performed by the film forming apparatus 1. For example, a host computer or the like that controls the film formation system SY in a lump may be used to directly control the operations of the respective components of the film formation apparatus 1.

Although described in detail later, in the film forming apparatus 1, the evaporation source unit 10 performs film formation while moving in the longitudinal direction of the substrate 100 in a state of being disposed across the short side direction of the substrate 100.

(film Forming stage)

The film formation stage 30A is a stage for forming a film on the substrate 100A. The film formation stage 30A supports the substrate 100A and the mask 101A, and adjusts the positions of the substrate 100A and the mask 101A. The film formation stage 30A includes a substrate support portion 32A, a mask support portion 34A, a support post 35A, and an alignment mechanism 36A.

The substrate support portion 32A supports the substrate 100A. In the present embodiment, the substrate support portion 32A supports the substrate 100A such that the short side of the substrate 100A extends in the Y direction and the long side of the substrate 100A extends in the X direction. The substrate support portion 32A supports the edge of the substrate 100A from the lower side of the substrate 100A. However, the substrate support portion 32A may support the substrate 100A by sandwiching the edge of the substrate 100A, or may support the substrate 100A by sucking the substrate 100A with an electrostatic chuck, an adhesive chuck, or the like. For example, the substrate support section 32A can receive the substrate 100A from the transfer robot 620 of the substrate transfer chamber 62. The substrate support portion 32A can be lifted by a lifting mechanism, not shown, and the substrate 100A received from the transfer robot 620 can be superimposed on the mask 101A supported by the mask support portion 34A. The lifting mechanism may use a known technique such as a ball screw mechanism.

Mask support 34A supports mask 101A. In the present embodiment, an opening, not shown, is provided in the mask support portion 34A, and the vapor deposition material is scattered on the film formation surface of the substrate 100A overlapping the mask 101A through the opening. The mask support portion 34A is supported by the chamber 45 via a support column 35A.

The alignment mechanism 36A performs alignment of the substrate 100A and the mask 101A. The alignment mechanism 36A aligns the substrate 100A supported by the substrate support 32A with the mask 101A supported by the mask support 32 by adjusting the relative positions of the substrate support 32A and the mask support 34A in the horizontal direction. The alignment of the substrate 100A and the mask 101A can be performed using a known technique, and thus a detailed description thereof will be omitted. As an example, the alignment mechanism 36A detects the alignment marks formed on the substrate 100A and the mask 101A by a camera, not shown. The alignment mechanism 36A then adjusts the positional relationship between the substrate 100A and the mask 101A so that the relationship between the position of the substrate 100A calculated from the mark formed on the substrate 100A and the position of the mask 101A calculated from the mark formed on the mask 101A satisfies a predetermined condition.

At the end of alignment by the alignment mechanism 36A, the substrate support section 32A superimposes the supported substrate 100A on the mask 101A. In a state where the substrate 100A and the mask 101A are stacked, film formation onto the substrate 100A by the evaporation source unit 10 is performed.

The film formation stage 30B may have the same structure as the film formation stage 30A. That is, the film formation stage 30B includes a substrate support portion 32B, a mask support portion 34B, a support post 35B, and an alignment mechanism 36B, which correspond to the substrate support portion 32A, the mask support portion 34A, the support post 35A, and the alignment mechanism 36A, respectively.

The film forming apparatus 1 of the present embodiment is a so-called dual load table film forming apparatus 1 having a plurality of film forming stages 30A, 30B. For example, during vapor deposition on the substrate 100A on the film formation stage 30A, the alignment of the substrate 100B and the mask 101B can be performed on the film formation stage 30B, and the film formation process can be efficiently performed.

(Evaporation source Unit)

Next, the evaporation source unit 10 will be described. The outline of each element will be described herein, and the detailed arrangement structure and operation example will be described below (see (arrangement structure of evaporation source unit) and operation example).

Fig. 4 is a diagram for explaining the structure of the evaporation source unit 10, and is a schematic view of the evaporation source unit 10 viewed from the lateral direction (Y direction). Fig. 5 is a schematic plan view for explaining the positional relationship between the evaporation sources 11a to 11r and the monitoring devices 12a to 12 r.

The evaporation source unit 10 emits the vapor deposition material while moving, and forms a film on the substrate 100. In the present embodiment, the evaporation source unit 10 includes a plurality of evaporation sources 11a to 11r, a plurality of monitoring devices 12a to 12r, an adhesion preventing plate 13, a limiting portion 14, a cap portion 15, and baffles 161 to 163.

The evaporation sources 11a to 11r emit vapor deposition materials. In the present embodiment, each of the plurality of evaporation sources 11a to 11r includes a storage portion for storing a vapor deposition material. Each of the storage portions has a discharge portion for discharging the evaporated vapor deposition material. The discharge portion may be, for example, a cylindrical member which is provided on the upper surface of the housing portion and communicates the inside and the outside of the housing portion with an opening formed on the upper surface of the housing portion.

The vapor deposition material stored in the storage portion is heated by a heater, not shown, and evaporated, and is discharged from the discharge portion to the internal space 450 of the chamber 45. As a heater for heating the vapor deposition material stored in the storage portion, a sheath heater using a heating wire can be used, for example.

In the present embodiment, the plurality of evaporation sources 11a to 11r can be divided into three evaporation source groups 17A to 17C separated from each other in the moving direction (X direction) of the evaporation source unit 10. The evaporation source group 17A includes a plurality of evaporation sources 11a to 11f arranged in a lateral direction (Y direction) intersecting the moving direction of the evaporation source unit 10. The evaporation source group 17B includes a plurality of evaporation sources 11g to 11l arranged in a lateral direction (Y direction) intersecting the moving direction of the evaporation source unit 10. The evaporation source group 17C includes a plurality of evaporation sources 11m to 11r arranged in a lateral direction (Y direction) intersecting the moving direction of the evaporation source unit 10.

The three evaporation source groups 17A to 17C are arranged in this order in the moving direction (X direction) of the evaporation source unit 10, and the evaporation source group 17A, the evaporation source group 17B, and the evaporation source group 17C are arranged in this order. That is, focusing on the evaporation sources included in the evaporation source groups 17A to 17C, for example, the evaporation sources 11a, 11g, and 11m are sequentially arranged in the moving direction (X direction) of the evaporation source unit 10.

The plurality of monitoring devices 12a to 12r monitor the discharge state of the vapor deposition material from the plurality of evaporation sources 11a to 11r, respectively. As shown in the monitor 12a of fig. 4, the monitor 12a to 12r of the present embodiment includes a quartz resonator 123 as a film thickness sensor inside a case 121. The vapor deposition materials discharged from the evaporation sources 11a to 11r are introduced into the introduction portion 122 formed in the case 121 and attached to the quartz resonator 123. The vibration frequency of the quartz vibrator 123 varies according to the deposition amount of the deposition material. Therefore, the control unit 43 monitors the vibration frequency of the quartz resonator 123, thereby calculating the film thickness of the vapor deposition material deposited on the substrate 100. Since the amount of the vapor deposition material adhering to the quartz resonator 123 per unit time and the amount of the vapor deposition material discharged from the evaporation sources 11a to 11r are correlated, the discharge state of the vapor deposition material from the plurality of evaporation sources 11a to 11r can be monitored as a result. In the present embodiment, the discharge state of the vapor deposition material from each of the evaporation sources 11a to 11r is independently monitored by each of the monitoring devices 12a to 12r, so that the output of each of the heating portions of each of the evaporation sources 11a to 11r can be more appropriately controlled based on the results. This can effectively control the film thickness of the vapor deposition material deposited on the substrate 100.

The adhesion preventing plate 13 is a plate for preventing deposition materials discharged from the plurality of evaporation sources 11a to 11r from adhering to the wall of the chamber 45 or the like. The adhesion preventing plate 13 is provided so as to be open at the upper part and surrounds the plurality of evaporation sources 11a to 11r in a plan view.

The limiting unit 14 limits the discharge range of the vapor deposition material discharged from the plurality of evaporation sources 11a to 11r. In the present embodiment, the limiting section 14 includes a plurality of plate members 141 to 145. The plate members 141 and 142 define the emission ranges of the plurality of evaporation sources 11a to 11f in the X direction. The plate member 143 defines the emission ranges of the plurality of evaporation sources 11g to 11l in the X direction. The plate member 144 defines the emission ranges of the plurality of evaporation sources 11g to 11r in the X direction. The plate member 145 defines the emission ranges of the plurality of evaporation sources 11m to 11r in the X direction.

The plate member 141 is provided with tubular members 146a to 146f through which the vapor deposition material scattered to the monitoring devices 12a to 12f passes (the tubular member 146a is shown in fig. 4 on behalf of the tubular members 146a to 146 f). The plate member 143 is provided with tubular members 146g to 146l through which the vapor deposition material scattered to the monitoring devices 12g to 12l passes (the tubular members 146g are shown in fig. 4 on behalf of the tubular members 146g to 146 l). The plate member 145 is provided with tubular members 146m to 146r through which the vapor deposition material scattered to the monitoring devices 12m to 12r passes (the tubular members 146m are shown in fig. 4 on behalf of the tubular members 146m to 146 r).

Here, the height of the opening of the cylindrical member 146g on the evaporation source 11g side is set lower than the upper end of the plate member 144. This can prevent the vapor deposition material discharged from the evaporation source 11m from passing through the tubular member 146g and reaching the monitoring device 12g. The height of the opening of the cylindrical member 146m on the evaporation source 11m side is set lower than the upper end of the plate member 144. This can prevent the vapor deposition material discharged from the evaporation source 11g from passing through the tubular member 146m and reaching the monitor 12m.

The cover 15 prevents the vapor deposition material from bypassing the plate members 141 to 145 and reaching the monitoring devices 12a to 12r. The cover portion 15 includes a cover member 151 that covers between the adhesion preventing plate 13 and the plate member 141, a cover member 152 that covers between the plate member 142 and the plate member 143, and a cover member 153 that covers between the plate member 145 and the adhesion preventing plate 13.

The baffles 161 to 163 block the evaporation material from scattering to the substrate 100. Specifically, the shutters 161 to 163 are provided so as to be displaceable between a blocking position (see fig. 4) for blocking the scattering of the vapor deposition material discharged from the evaporation source groups 17A to 17C to the substrate 100 and an allowable position (see fig. 6) for allowing the scattering of the vapor deposition material to the substrate 100. For example, the shutter 161 is provided so as to be displaceable between a blocking position for blocking the scattering of the vapor deposition material discharged from the evaporation sources 11a to 11f included in the evaporation source group 17A toward the substrate and an allowable position for allowing the scattering of the vapor deposition material discharged from the evaporation sources 11a to 11f included in the evaporation source group 17A toward the substrate. That is, focusing on the shutter 161 alone, the shutter 161 allows the vapor deposition material discharged from the evaporation sources 11g to 11r to scatter toward the substrate at the blocking position, and blocks the vapor deposition material discharged from the evaporation sources 11a to 11f from scattering toward the substrate. The same can be said for the baffles 162 to 163.

(Mobile unit)

Referring again to fig. 2 and 3. The moving unit 20 moves the evaporation source unit 10. That is, the evaporation source unit 10 can form a film on the substrate 100 while being moved by the moving unit 20. The moving unit 20 includes an X-direction moving portion 22 that moves in the X-direction and a Y-direction moving portion 24 that moves the evaporation source unit 10 in the Y-direction.

As components provided in the evaporation source unit 10, the X-direction moving portion 22 includes a motor 221, a pinion gear 222 mounted on a shaft member rotated by the motor 221, and a guide member 223. The X-direction moving unit 22 includes: a frame member 224, the frame member 224 supporting the evaporation source unit 10; a rack 225, the rack 225 being formed on an upper surface of the frame member 224 and engaged with the pinion gear 222; and a guide rail 226, the guide rail 226 being for sliding of the guide member 223. The evaporation source unit 10 moves in the X direction along the guide rail 226 by meshing the pinion gear 222 rotated by the driving of the motor 221 with the rack 225.

The Y-direction moving portion 24 includes two support members 241A and 241B extending in the Y-direction and separated in the X-direction. The two support members 241A and 241B support the short sides of the frame member 224 of the X-direction moving portion 22. The Y-direction moving unit 24 includes a driving mechanism such as a motor and a rack-and-pinion mechanism, which are not shown, and moves the frame member 224 in the Y-direction relative to the two support members 241A and 241B, thereby moving the evaporation source unit 10 in the Y-direction. The Y-direction moving unit 24 moves the evaporation source unit 10 in the Y-direction between a position below the substrate 100A supported by the film formation stage 30A and a position below the substrate 100B supported by the film formation stage 30B.

(configuration structure of evaporation source unit)

Fig. 6 is a diagram for explaining the arrangement structure of the evaporation source unit 10. Fig. 6 shows emission ranges R1 to R3 of the evaporation sources 11a, 11g, and 11m in the moving direction (X direction) of the evaporation source unit 10. Here, the evaporation sources 11a, 11g, and 11m are shown, but the evaporation sources 11b to 11f may have the same structure as the evaporation source 11a, the evaporation sources 11h to 11l may have the same structure as the evaporation source 11g, and the evaporation sources 11n to 11r may have the same structure as the evaporation source 11 m.

In the present embodiment, the emission range R1 is determined based on the positional relationship between the emission portion 110a of the evaporation source 11a and the plate members 141 and 142 of the limiting portion 14. The emission range R3 is determined based on the positional relationship between the emission portion 110g of the evaporation source 11g and the plate members 143, 144 of the limiting portion 14. The emission range R3 is determined based on the positional relationship between the emission portion 110m of the evaporation source 11m and the plate members 144, 145 of the limiting portion 14.

Specifically, the range between the virtual straight line VL1 passing through the discharge portion 110a and the upper end portion of the plate member 141 and the virtual straight line VL2 passing through the discharge portion 110a and the upper end portion of the plate member 142 is the discharge range R1. Although there may be vapor deposition material scattered outside the geometrically defined emission range R1, the geometrically defined range is referred to as the emission range R1 here. Similarly, a range between a virtual straight line VL3 passing through the discharge portion 110g and the upper end portion of the plate member 143 and a virtual straight line VL4 passing through the discharge portion 110g and the upper end portion of the plate member 144 is a discharge range R2. The range between the virtual straight line VL5 passing through the discharge portion 110m and the upper end portion of the plate member 144 and the virtual straight line VL6 passing through the discharge portion 110m and the upper end portion of the plate member 145 is a discharge range R3.

In addition, when film formation is performed using an evaporation source unit having a plurality of evaporation sources like the evaporation source unit 10 of the present embodiment, it is conceivable to perform multilayer (for example, two-layer) film formation on the substrate 100 using one evaporation source unit.

For example, in the evaporation source unit 10, the evaporation sources 11a to 11f emit lithium fluoride (LiF) or ytterbium (Yb), the evaporation sources 11g to 11l emit magnesium (Mg), and the evaporation sources 11m to 11r emit silver (Ag). A layer (first layer) of lithium fluoride or ytterbium and a layer (second layer) of silver magnesium (AgMg) were formed on the substrate 100. The above is merely an example, and the film forming material is not limited thereto.

However, in such a case, if the vapor deposition material of the first layer and the vapor deposition material of the second layer are mixed, there is a case where the film formation quality is degraded. Therefore, in the present embodiment, the following arrangement structure suppresses degradation of the film formation quality due to the deposition material mixing in the multilayer film formation.

That is, in the present embodiment, the distance L12 between the evaporation source 11a and the evaporation source 11g in the moving direction (X direction) of the evaporation source unit 10 is longer than the distance L23 between the evaporation source 11g and the evaporation source 11m in the moving direction. Accordingly, since the discharge range R1 of the vapor deposition material by the evaporation source 11a and the discharge range R2 of the vapor deposition material by the evaporation source 11g are less likely to overlap, the vapor deposition material of the first layer and the vapor deposition material of the second layer are less likely to mix, and a reduction in film formation quality can be suppressed.

Here, the distance L12 is a distance between the center of the evaporation source 11a in the moving direction (X direction) and the center of the evaporation source 11g in the moving direction (X direction). The distance L23 is a distance between the center of the evaporation source 11g in the moving direction (X direction) and the center of the evaporation source 11m in the moving direction (X direction).

In the present embodiment, the discharge angle θ1 of the vapor deposition material from the evaporation source 11a is smaller than the discharge angle θ2 of the vapor deposition material from the evaporation source 11g when viewed from the lateral direction (Y direction) intersecting the moving direction (X direction). Accordingly, since the discharge range R1 of the vapor deposition material by the evaporation source 11a and the discharge range R2 of the vapor deposition material by the evaporation source 11g are less likely to overlap, the vapor deposition material of the first layer and the vapor deposition material of the second layer are less likely to mix, and a reduction in film formation quality can be suppressed.

In the present embodiment, the emission angle θ1 of the evaporation source 11a is smaller on the evaporation source 11g side than on the opposite side of the evaporation source 11g side when viewed from the lateral direction (Y direction) intersecting the moving direction (X direction). Specifically, an angle θ11 formed by the virtual plumb line VLc and the virtual straight line VL2 passing through the discharge portion 110a of the evaporation source 11a is smaller than an angle θ12 formed by the virtual plumb line VLc and the virtual straight line VL 1. Thus, the vapor deposition material discharged from the evaporation source 11a is less likely to scatter toward the evaporation source 11 g. Therefore, since the discharge range R1 of the vapor deposition material by the evaporation source 11a and the discharge range R2 of the vapor deposition material by the evaporation source 11g are less likely to overlap, the vapor deposition material of the first layer and the vapor deposition material of the second layer are less likely to mix, and a decrease in film formation quality can be suppressed. In addition, in the emission range R1, it can be said that the evaporation source 11g side is the inside of the evaporation source unit 10, and the opposite side to the evaporation source 11g side is the outside of the evaporation source unit 10.

In the present embodiment, the distance L12 is longer than the distance L23 and the discharge angle θ1 is smaller than the discharge angle θ2, but a configuration satisfying only one of them may be adopted.

In the present embodiment, the emission range R1 of the evaporation source 11a and the emission range R2 of the evaporation source 11g do not overlap in the moving direction (X direction). Specifically, the discharge range R1 and the discharge range R2 do not overlap in the moving direction (X direction) at the height of the film formation surface of the substrate 100. Accordingly, even when all of the shutters 161 to 163 are positioned at the allowable positions, the vapor deposition material discharged from the evaporation source 11a can be prevented from being mixed with the vapor deposition material discharged from the evaporation source 11 g. Therefore, the deposition material of the first layer and the deposition material of the second layer can be prevented from being mixed, and the substrate 100 can be formed into two layers by one film forming operation while moving in one direction.

On the other hand, in the present embodiment, the emission range R2 of the evaporation source 11g and the emission range R3 of the evaporation source 11m overlap in the moving direction (X direction). Specifically, the discharge range R2 and the discharge range R3 overlap in the moving direction (X direction) at the height of the film formation surface of the substrate 100. This allows co-deposition of a layer of a compound or mixture of the vapor deposition material discharged from the evaporation source 11g and the vapor deposition material discharged from the evaporation source 11r to be deposited on the substrate 100.

In the present embodiment, the monitor 12a, the evaporation source 11a, the monitor 12g, the evaporation source 11m, and the monitor 12m are arranged in this order in the moving direction (X direction). That is, the monitoring device 12g is disposed between the evaporation source 11a and the evaporation source 11g, which are longer than the distance between the evaporation source 11g and the evaporation source 11 m. Therefore, since the monitor device 12g is disposed in the space provided to prevent the emission range R1 and the emission range R2 from overlapping, the constituent elements of the evaporation source unit 10 can be compactly disposed, and the device can be prevented from increasing in size. Further, since the monitoring devices 12a to 12r can be disposed in the vicinity of the evaporation sources 11a to 11r to be monitored, a decrease in the monitoring accuracy of the monitoring devices 12a to 12r can be suppressed.

(working example)

Fig. 7 is an operation explanatory diagram of a film forming process of the film forming apparatus 1, and shows an example of a film forming method using the film forming apparatus 1. In the initial state (before the state ST1 is reached), the evaporation source unit 10 is located at the position (x 1, y 1). As a brief outline of the operation, the evaporation source unit 10 forms a film on the substrate 100B of the film formation stage 30B after forming a film on the substrate 100A of the film formation stage 30A. Further, the evaporation source unit 10 performs film formation on the substrate while reciprocating in the X direction (longitudinal direction of the substrate) below the film formation stage 30A and the film formation stage 30B. Here, the evaporation source unit 10 performs film formation once while moving on the positive side in the X direction and performs film formation once while moving on the negative side in the X direction for each substrate, and performs film formation in total of two times. Hereinafter, the first film formation for each substrate may be referred to as a film formation in the direction of the wafer, and the second film formation may be referred to as a film formation in the direction of the wafer.

The state ST1 is a state after the evaporation source unit 10 forms a film on the substrate 100A in the forward direction. The evaporation source unit 10 performs film formation in the direction toward the substrate 100A while moving from the position (x 1, y 1) to the position (x 2, y 1). In the film formation in this direction, the shutters 161 to 163 are all positioned at the allowable positions. Therefore, after the film formation of the first layer by the evaporation source group 17A on the front side in the traveling direction is performed on the substrate 100A, the film formation of the second layer by the evaporation source groups 17B and 17C on the rear side in the traveling direction is performed.

The state ST2 is a state after the evaporation source unit 10 forms a film on the substrate 100A in the return direction. The evaporation source unit 10 performs film formation in the return direction on the substrate 100A while moving from the position (x 2, y 1) to the position (x 1, y 1). In the film formation in this direction, the shutters 162 to 163 are positioned at the allowable positions, while the shutter 161 is positioned at the blocking position. Therefore, the second layer is formed on the substrate 100A by the evaporation source groups 17B and 17C.

In this embodiment, the first layer is formed only in the direction of travel, and the second layer is formed in both the direction of travel and the direction of return. Therefore, the film thickness of the second layer can be made thicker than the film thickness of the first layer. In addition, when the film thickness of the first layer and the film thickness of the second layer are to be the same, the shutters 162 to 163 may be positioned at the blocking positions during the film formation in the direction.

In addition, the speed of the evaporation source unit 10 when moving in one side of the moving direction may be different from the speed of the evaporation source unit when moving in the opposite side. For example, when the film thickness of the second layer is desired to be thicker than the film thickness of the first layer, the moving speed in the return direction may be made slower than the moving speed in the forward direction. By appropriately adjusting the moving speed of the evaporation source unit 10 in this way, the relative relationship between the film thicknesses of the respective layers can be adjusted during the multilayer film formation.

In the present embodiment, the evaporation source groups 17B and 17C scatter the vapor deposition material with respect to the substrate 100A in both the forward direction and the backward direction, and therefore, it is possible to achieve uniform mixing of the vapor deposition material discharged from the evaporation source group 17B and the vapor deposition material discharged from the evaporation source group 17C in the thickness direction.

In the present embodiment, the evaporation source unit 10 is moved at a constant speed while the substrate 100A and the emission ranges R1 to R3 overlap each other in the moving direction. For example, in the film formation in the direction toward the substrate 100A, acceleration is ended from the start of the movement until reaching a position where the film formation surface of the substrate 100A overlaps the discharge range R1, and deceleration is started after passing through a position where the film formation surface of the substrate 100A overlaps the discharge range R3. In this way, by moving at a constant speed during film formation, the film formed on the substrate 100A can be made uniform in the moving direction. When viewed from the other side, the evaporation source unit 10 moves at a constant speed during film formation, and therefore, when the side moving in the moving direction is changed, that is, when turning back, the speed is changed.

The description returns to fig. 7. The state ST3 is a state after the evaporation source unit 10 is moved from the film formation stage 30A to the film formation stage 30B. The evaporation source unit 10 is moved from the position (x 1, Y1) to the position (x 1, Y2) in the Y direction by the Y-direction moving portion 24 of the moving unit 20. During the movement, the shutters 161 to 163 may be positioned at the blocking position to prevent the vapor deposition material from scattering into the chamber 45, or may be positioned at the allowable position in preparation for film formation on the next substrate 100B.

The state ST4 is a state after the evaporation source unit 10 forms a film on the substrate 100B in the forward direction. The evaporation source unit 10 performs film formation in the direction toward the substrate 100B while moving from the position (x 1, y 2) to the position (x 2, y 2). In the film formation in this direction, the shutters 161 to 163 are all positioned at the allowable positions. Therefore, after the film formation of the first layer by the evaporation source group 17A on the front side in the traveling direction is performed on the substrate 100B, the film formation of the second layer by the evaporation source groups 17B and 17C on the rear side in the traveling direction is performed.

The state ST5 is a state after the evaporation source unit 10 forms a film on the substrate 100B in the return direction. The evaporation source unit 10 performs film formation in the return direction on the substrate 100B while moving from the position (x 2, y 2) to the position (x 1, y 2). In the film formation in this direction, the shutters 162 to 163 are positioned at the allowable positions, while the shutter 161 is positioned at the blocking position. Therefore, the second layer is formed on the substrate 100B by the evaporation source groups 17B and 17C.

The state ST6 is a state after the evaporation source unit 10 is moved from the film formation stage 30B to the film formation stage 30A. The evaporation source unit 10 is moved from the position (x 1, Y2) to the position (x 1, Y1) in the Y direction by the Y-direction moving portion 24 of the moving unit 20. During the movement, the shutters 161 to 163 may be positioned at the blocking position to prevent the vapor deposition material from scattering into the chamber 45, or may be positioned at the allowable position in preparation for film formation on the subsequent substrate 100A. After the state ST6, the evaporation source unit 10 returns to the state ST1 to film the next substrate 100A.

In addition, while the film formation stage 30A is forming the film on the substrate 100A, the carry-in and carry-out of the substrate 100B and the alignment of the substrate 100B with the mask 101B are appropriately performed on the film formation stage 30B. In addition, while the film formation stage 30B is forming the film on the substrate 100B, the loading and unloading of the substrate 100A and the alignment of the substrate 100A with the mask 101A are appropriately performed on the film formation stage 30A.

As described above, according to the present embodiment, when a multilayer film is formed in a film forming apparatus, a decrease in film forming quality can be suppressed.

< second embodiment >

(outline of film Forming apparatus)

Fig. 8 is a front view schematically showing the structure of a film forming apparatus 91 according to an embodiment. The film forming apparatus 91 of fig. 8 is different from the film forming apparatus 1 of fig. 2 mainly in that: the evaporation source unit 910 is provided over the long side direction of the substrate, and the evaporation source unit 910 performs film formation while moving in the short side direction (Y direction) of the substrate. In addition, the difference is that: the direction in which the plurality of film formation stages are arranged is the same as the direction in which the evaporation source unit moves and performs film formation. Hereinafter, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

The film forming apparatus 91 includes an evaporation source unit 910. The evaporation source unit 910 includes a plurality of evaporation sources 911a to 911r. In fig. 8, evaporation sources 911a, 911g, and 911m are representatively shown. The evaporation sources 911b to 911f are arranged in the X direction with the evaporation source 911 a. The evaporation sources 911h to 911l are arranged in the X direction with the evaporation source 911 g. The evaporation sources 911n to 911r are arranged in the X direction with the evaporation source 911m.

The evaporation source unit 910 can reciprocate in the short side direction (Y direction) of the substrate 100 by the moving unit 920. Since the mobile unit 920 can use a known technology, a detailed description thereof will be omitted. As an example, the moving unit 920 is a linear guide including a moving body 9201 on which a plurality of evaporation sources 911a to 911r are mounted, a rolling body 9202 rotatably supported by the moving body 9201, and a driving unit not shown. That is, when driven by a driving unit, not shown, such as a rack and pinion, the movable body 9201 moves along the rail 451 provided on the floor of the chamber 45 via the rolling bodies 9202. With this configuration, the mechanism in the chamber 45 can be simplified because the moving mechanism of the evaporation sources 911a to 911r is established by one axis.

In the present embodiment, similarly to the evaporation source unit 10, the evaporation source unit 910 prevents the emission range R91 of the evaporation source 911a and the emission range R92 of the evaporation source 911g from overlapping each other in the moving direction (Y direction) of the evaporation source unit 910. That is, the evaporation source unit 910 can suppress the mixture of the vapor deposition material discharged from the evaporation source 911a and the vapor deposition material discharged from the evaporation source 911g, as in the evaporation source unit 10. Therefore, the first layer of vapor deposition material (vapor deposition material discharged from the evaporation sources 911a to 911 f) and the second layer of vapor deposition material (vapor deposition material discharged from the evaporation sources 911g to 911l and vapor deposition material discharged from the evaporation sources 911m to 911 r) can be prevented from being mixed, and the substrate 100 can be formed into two layers by one film forming operation while moving in one direction.

In the present embodiment, baffles 916A and 916B are provided below the film formation stages 30A and 30B, respectively. The shutter 916A is movable between a blocking position, which is a position below the film formation stage 30A that blocks the scattering of the vapor deposition material with respect to the substrate 100A, and an allowable position, which is a position that allows the scattering of the vapor deposition material with respect to the substrate 100A and is offset from the blocking position in the Y direction +y side. The shutter 916B is movable between a blocking position for blocking the scattering of the vapor deposition material from the substrate 100B below the film formation stage 30B, and an allowable position for allowing the scattering of the vapor deposition material from the substrate 100B to be shifted from the blocking position to the Y direction +y side. As the moving mechanism of the shutters 916A and 916B, a known technique can be used, and therefore, the description thereof will be omitted.

Working example 1

Fig. 9 and 10 are operation explanatory views of a film forming process of the film forming apparatus 91. As a schematic illustration, the evaporation source unit 910 performs film formation on the substrate 100A while reciprocating once below the film formation stage 30A, and then performs film formation on the substrate 100B while reciprocating once below the film formation stage 30B.

The state ST901 is an initial state in which the evaporation source unit 910 is located at the position POS10 on the-Y side of the deposition stage 30A. At this time, the shutter 916A and the shutter 916B are located at the blocking positions.

The state ST902 is a state in which the evaporation source unit 910 forms a film on the substrate 100A while moving in the Y direction +y side. At this time, the shutter 916A moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916A moves so as not to overlap the discharge range R91 in the Y direction. Therefore, after the first layer is formed on the substrate 100A by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r. The state ST903 is a state in which the evaporation source unit 910 finishes film formation on the substrate 100A while moving in the Y direction +y side.

The state ST904 is a state in which the evaporation source unit 910 performs film formation on the substrate 100A while moving along the Y direction-Y side. At this time, the shutter 916A moves in the Y direction-Y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916A moves so as to overlap the discharge range R91 in the Y direction. Therefore, the film formation of the second layer is performed on the substrate 100A by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r. The state ST905 is a state in which the evaporation source unit 910 finishes film formation on the substrate 100A while moving in the Y direction-Y side.

The state ST906 is a state in which the evaporation source unit 910 performs film formation on the substrate 100B while moving in the Y direction +y side. At this time, the shutter 916B moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916B moves so as not to overlap the discharge range R91 in the Y direction. Therefore, after the first layer is formed on the substrate 100B by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r. The state ST907 is a state in which the evaporation source unit 910 finishes film formation on the substrate 100B while moving in the Y direction +y side.

The state ST908 is a state in which the evaporation source unit 910 performs film formation on the substrate 100B while moving along the Y direction-Y side. At this time, the shutter 916B moves in the Y direction-Y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916B moves so as to overlap the discharge range R91 in the Y direction. Therefore, the film formation of the second layer by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r is performed on the substrate 100B. After the state ST908, the process returns to the state ST901, and the film is formed on the next substrate 100A.

Working example 2

Fig. 11 and 12 are operation explanatory views of a film forming process by the film forming apparatus 91. As a schematic illustration, the evaporation source unit 910 sequentially forms films on the substrate 100A and the substrate 100B while moving in the Y direction +y side.

The state ST911 is an initial state in which the evaporation source unit 910 is located at the position POS10 on the-Y side of the deposition stage 30A. At this time, the shutter 916A and the shutter 916B are located at the blocking positions.

The state ST912 is a state in which the evaporation source unit 910 forms a film on the substrate 100A while moving in the Y direction +y side. At this time, the shutter 916A moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916A moves so as not to overlap the discharge range R91 in the Y direction. Therefore, after the first layer is formed on the substrate 100A by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r.

The state ST913 is a state in which the evaporation source unit 910 finishes film formation on the substrate 100A while moving in the Y direction +y side. The evaporation source unit 910 continues to move in the Y direction +y side in order to advance film formation on the substrate 100B. In addition, at this time, the shutter 916A is positioned at the allowable position.

The state ST914 is a state in which the evaporation source unit 910 performs film formation on the substrate 100B while moving further in the Y direction +y side. At this time, the shutter 916B moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916B moves so as not to overlap the discharge range R91 in the Y direction. Therefore, after the first layer is formed on the substrate 100B by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r. Further, at this time, the shutter 916A moves from the accommodating position to the blocking position.

The state ST915 is a state in which the evaporation source unit 910 ends film formation on the substrate 100B while moving in the Y direction +y side. At this time, the shutter 916B is positioned at the allowable position.

The state ST916 is a state in which the evaporation source unit 910 starts to move to the Y direction-Y side. At this time, the shutter 916B moves from the accommodating position to the blocking position in the Y direction-Y side. Further, the shutter 916B is moved in the Y direction-Y side before the evaporation source unit 910 so as not to allow the vapor deposition material discharged from the evaporation source unit 910 to reach the substrate 100B.

Thereafter, the evaporation source unit 910 continues to move in the Y direction-Y side, returns to the state ST911, and forms films on the substrates 100A and 100B.

After the film formation of the substrate 100A, the film formation stage 30A appropriately performs the loading and unloading of the substrate 100A and the alignment of the substrate 100A with the mask 101A while the shutter 916A is positioned at the blocking position (for example, during the state ST914 to the state ST911 of the next cycle). After the film formation of the substrate 100B, the film formation stage 30B appropriately performs the carry-in and carry-out of the substrate 100B and the alignment of the substrate 100B with the mask 101B while the shutter 916B is positioned at the blocking position (for example, while the shutter 916B is in the state ST916 to the state ST913 of the next cycle).

Thus, in the present embodiment, the evaporation source unit 910 returns to the initial position (film formation start position) while moving in one direction (Y direction+y side) and moving in the opposite direction (Y direction—y side) while forming films on the substrates 100A and 100B.

Here, the moving speed of the evaporation source unit 910 may be greater at the time of film formation than at the time of returning to the initial position. This can increase the ratio of the film formation time to the substrate in the film formation process, and can increase the film thickness formed on the substrate.

< third embodiment >

(outline of film Forming apparatus)

Fig. 13 is a front view schematically showing the structure of a film forming apparatus 991 according to an embodiment. The film forming apparatus 991 of fig. 3 is different from the film forming apparatus 91 of fig. 8 mainly in that: with a third baffle 916C. Hereinafter, the same components as those of the second embodiment will be denoted by the same reference numerals, and description thereof will be omitted.

The film forming apparatus 991 has three shutters 916A to 916C. The shutter 916A moves between a blocking position POS31 and an allowable position POS32, wherein the blocking position POS31 is a position below the film formation stage 30A that blocks the scattering of the vapor deposition material to the substrate 100A of the film formation stage 30A, and the allowable position POS32 is a position that allows the scattering of the vapor deposition material with respect to the substrate 100A and is offset from the blocking position to the Y-Y side. The shutter 916B moves between a blocking position POS33 and an allowable position POS34, wherein the blocking position POS33 is a position below the film formation stage 30B that blocks the scattering of the vapor deposition material to the substrate 100B of the film formation stage 30B, and the allowable position POS34 is a position that allows the scattering of the vapor deposition material to the substrate 100B and is offset from the blocking position to the Y direction +y side. The shutter 916C moves between the blocking position POS31 and the blocking position POS 33. Further, an allowable position POS35 that allows the vapor deposition material to scatter on the substrates 100A and 100B is provided between the blocking position POS31 and the blocking position POS 33.

In the present embodiment, the film forming apparatus 991 performs the film forming process while allowing or blocking the scattering of the vapor deposition material to the substrates 100A and 100B by using the three shutters 916A to 916C.

(working example)

Fig. 14 and 15 are operation explanatory views of a film forming process of the film forming apparatus 991. As a schematic illustration, the evaporation source unit 910 sequentially forms films on the substrate 100A and the substrate 100B while moving in the Y direction +y side.

The state ST921 is an initial state in which the evaporation source unit 910 is located at the position POS10 on the-Y side of the deposition stage 30A. At this time, the shutters 916A to 916C are located at the allowable position POS32, the blocking position POS33, and the blocking position POS31, respectively. That is, the substrate 100A is covered with the barrier 916C, and the substrate 100B is covered with the barrier 916B.

The state ST922 is a state in which the evaporation source unit 910 forms a film on the substrate 100A while moving in the Y direction +y side. At this time, the shutter 916C moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916C moves so as not to overlap the discharge range R91 in the Y direction. Therefore, after the first layer is formed on the substrate 100A by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r. In this case, the shutter 916A also moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916A is moved to the rear side of the evaporation source unit 910 in the traveling direction so as not to overlap the discharge range R93 in the Y direction.

The state ST923 is a state in which the evaporation source unit 910 finishes film formation on the substrate 100A while moving in the Y direction +y side. The evaporation source unit 910 continues to move in the Y direction +y side in order to advance film formation on the substrate 100B. At this time, the shutter 916A is positioned at the blocking position POS31, and the shutter 916C is positioned at the permitting position POS35.

The state ST924 is a state in which the evaporation source unit 910 forms a film on the substrate 100B while moving further in the Y direction +y side. At this time, the shutter 916B moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916B moves so as not to overlap the discharge range R91 in the Y direction. Therefore, after the first layer is formed on the substrate 100B by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911 r. In this case, the shutter 916C also moves in the Y direction +y side in conjunction with the movement of the evaporation source unit 910. Further, the shutter 916C is moved to the rear side of the evaporation source unit 910 in the traveling direction so as not to overlap the discharge range R93 in the Y direction.

The state ST925 is a state in which the evaporation source unit 910 finishes film formation on the substrate 100B while moving in the Y direction +y side. At this time, the shutter 916B is positioned at the allowable position POS34, and the shutter 916C is positioned at the blocking position POS33. That is, in this state, scattering of the vapor deposition material with respect to the substrates 100A and 100B is blocked.

The state ST926 is a state in which the evaporation source unit 910 starts to move in the Y direction-Y side. At this time, the shutters 916B, 916C move in the Y direction-Y side. Further, the shutter 916B moves in the Y direction-Y side in conjunction with the evaporation source unit 910 so as not to allow the vapor deposition material discharged from the evaporation source unit 910 to reach the substrate 100B.

Thereafter, the evaporation source unit 910 continues to move in the Y direction-Y side, returns to the state ST921, and forms films on the substrates 100A and 100B.

In the present embodiment, by performing the film formation process using the three baffles 916A to 916C, it is possible to secure a longer time for the substrates 100A and 100B to be covered with the baffles 916A to 916C without scattering the vapor deposition material with respect to the substrates 100A and 100B. Therefore, the time for carrying in, carrying out, or aligning the substrates 100A, 100B can be ensured longer.

< modification >

The number, shape, and other structures of the evaporation sources can be appropriately changed. For example, the evaporation source unit 10 includes three evaporation source groups 17A to 17C, but may include two evaporation source groups or four or more evaporation source groups. The number of evaporation sources included in each evaporation source group can be appropriately changed. Instead of the evaporation source group including a plurality of evaporation sources, one evaporation source may be provided so as to extend in a crossing direction crossing the moving direction of the evaporation source unit 10. The evaporation source may be provided with a plurality of discharge portions separated from each other in the intersecting direction. In addition, a plurality of evaporation sources long in the intersecting direction may be provided so as to be separated from each other in the moving direction of the evaporation source unit 10.

The configuration of the monitoring devices 12a to 12r and the like may be changed as appropriate. Fig. 16 is a diagram for explaining the structure of the evaporation source unit 10, and is a schematic view of the evaporation source unit viewed from the lateral direction. In this example, the monitor 12a and monitor devices 12b to 12f, not shown, which are arranged in the Y direction, are provided between the evaporation sources 11a to 11f and the evaporation sources 11g to 11l in the X direction. With such an arrangement, a space provided to prevent overlapping of the payout range R1 and the payout range R2 can be effectively utilized.

Method for manufacturing electronic device

Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, as examples of the electronic device, a structure and a manufacturing method of the organic EL display device are illustrated. In this example, a plurality of film forming systems SY illustrated in fig. 1 are provided in the production line.

First, an organic EL display device to be manufactured is explained. Fig. 17 (a) is an overall view of the organic EL display device 50, and fig. 17 (B) is a view showing a cross-sectional structure of one pixel.

As shown in fig. 17 (a), a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix in a display region 51 of the organic EL display device 50. The light emitting elements each have a structure including an organic layer sandwiched between a pair of electrodes, which will be described later in detail.

The pixel herein refers to the smallest unit in which a desired color can be displayed in the display area 51. In the case of a color organic EL display device, the pixel 52 is configured by a combination of a plurality of sub-pixels, i.e., a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit light different from each other. The pixel 52 is generally composed of a combination of three sub-pixels of a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but is not limited thereto. The pixel 52 may include at least one type of sub-pixel, preferably two or more types of sub-pixels, and more preferably three or more types of sub-pixels. The sub-pixels constituting the pixel 52 may be, for example, a combination of four sub-pixels, that is, a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

Fig. 17 (B) is a partially cross-sectional schematic view at line a-B of fig. 17 (a). The pixel 52 includes a plurality of sub-pixels including an organic EL element including a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R and a green layer 56G and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. Among them, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

The first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common over the plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in fig. 17 (B), the hole transport layer 55 may be formed as a layer common to a plurality of sub-pixel regions, the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region, and the electron transport layer 57 and the second electrode 58 may be formed as a layer common to a plurality of sub-pixel regions over the red layer, the green layer, and the blue layer.

Further, in order to prevent short-circuiting between the adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Further, since the organic EL layer is degraded by moisture and oxygen, a protective layer 60 for protecting the organic EL element from moisture and oxygen is provided.

In fig. 17 (B), the hole transport layer 55 and the electron transport layer 57 are shown as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer according to the structure of the organic EL display element. In addition, a hole injection layer having a band structure that enables smooth injection of holes from the first electrode 54 into the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

Each of the red layer 56R, the green layer 56G, and the blue layer 56B may be formed of a single light-emitting layer or may be formed by stacking a plurality of layers. For example, the red layer 56R may be formed of two layers, the upper layer may be formed of a red light-emitting layer, and the lower layer may be formed of a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be formed with a red light-emitting layer, and the upper layer may be formed with an electron transport layer or a hole blocking layer. By providing a layer on the lower side or the upper side of the light-emitting layer in this manner, the light-emitting position of the light-emitting layer is adjusted, and by adjusting the optical path length, the color purity of the light-emitting element can be improved.

Although the red layer 56R is shown here as an example, the green layer 56G and the blue layer 56B may have the same structure. The number of layers may be two or more. Further, layers of different materials may be stacked such as a light-emitting layer and an electron blocking layer, or for example, two or more layers of the same material may be stacked as the light-emitting layer.

Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, a case is assumed where the red layer 56R is composed of two layers, that is, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

First, a circuit (not shown) for driving the organic EL display device is prepared, and a substrate 53 on which a first electrode 54 is formed. The material of the substrate 53 is not particularly limited, and may be glass, plastic, metal, or the like. In the present embodiment, as the substrate 53, a substrate in which a film of polyimide is laminated on a glass substrate is used.

A resin layer such as acrylic or polyimide is applied to the substrate 53 on which the first electrode 54 is formed by bar coating or spin coating, and the resin layer is patterned by photolithography so as to form an opening in a portion where the first electrode 54 is formed, and an insulating layer 59 is formed. The opening corresponds to a light emitting region where the light emitting element actually emits light. In the present embodiment, the large-sized substrate is processed before the insulating layer 59 is formed, and the dividing step of dividing the substrate 53 is performed after the insulating layer 59 is formed.

The substrate 53 having the insulating layer 59 patterned thereon is carried into the first film formation apparatus 1, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed using a mask in which openings are formed in each display region 51 of a panel portion which is finally one organic EL display device.

Next, the substrate 53 formed to the hole transport layer 55 is carried into the second film formation apparatus 1. Alignment of the substrate 53 and the mask is performed, the substrate is placed on the mask, and a red layer 56R is formed on a portion (a region where a red subpixel is formed) of the hole transport layer 55 where the red light emitting element of the substrate 53 is arranged. Here, the mask used in the second film formation chamber is a high-definition mask in which openings are formed only in a plurality of regions of the sub-pixel which becomes red out of a plurality of regions on the substrate 53 which becomes the sub-pixel of the organic EL display device. Thus, the red layer 56R including the red light emitting layer is formed only in the region of the sub-pixel which is red out of the regions of the substrate 53 which are the sub-pixels. In other words, the red layer 56R is not formed in the region of the blue subpixel and the region of the green subpixel among the regions of the plurality of subpixels on the substrate 53, and is selectively formed in the region of the red subpixel.

In the same manner as the formation of the red layer 56R, the green layer 56G is formed in the third film formation apparatus 1, and the blue layer 56B is formed in the fourth film formation apparatus 1. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B, the electron transport layer 57 is formed on the entire display region 51 in the fifth film formation apparatus 1. The electron transport layer 57 is formed as a common layer on the three color layers 56R, 56G, 56B.

The substrate formed on the electron transport layer 57 is moved to the sixth film formation apparatus 1, and the second electrode 58 is formed. In the present embodiment, each layer is formed by vacuum deposition in the first to sixth film forming apparatuses 1 to 1. However, the present invention is not limited to this, and for example, the film formation of the second electrode 58 in the sixth film formation apparatus 1 may be performed by sputtering. Thereafter, the substrate formed to the second electrode 58 is moved to a sealing device, and the protective layer 60 is formed into a film by plasma CVD (sealing process), and the organic EL display device 50 is completed. The protective layer 60 is formed by CVD, but the present invention is not limited to this, and may be formed by ALD or inkjet.

The present invention is not limited to the above-described embodiments, and various modifications and changes can be made within the scope of the gist of the present invention.

Claims

1. A film forming apparatus comprising an evaporation source unit for forming a film on a substrate while moving the evaporation source unit,

2. A film forming apparatus comprising an evaporation source unit for forming a film on a substrate while moving the evaporation source unit,

3. The film forming apparatus according to claim 1 or 2, wherein,

the discharge range of the vapor deposition material from the first evaporation source and the discharge range of the vapor deposition material from the second evaporation source do not overlap in the moving direction.

4. The film forming apparatus according to claim 1, wherein,

the discharge range of the vapor deposition material from the first evaporation source and the discharge range of the vapor deposition material from the second evaporation source do not overlap in the moving direction,

The discharge range of the vapor deposition material from the second evaporation source overlaps the discharge range of the vapor deposition material from the third evaporation source in the moving direction.

5. The film forming apparatus according to claim 1 or 2, wherein,

the first evaporation source emits a first vapor deposition material,

the second evaporation source emits a second vapor deposition material different from the first vapor deposition material,

the film forming apparatus further includes a shutter plate that blocks the scattering of the first vapor deposition material to the substrate while allowing the scattering of the second vapor deposition material to the substrate.

6. The film forming apparatus according to claim 5, wherein,

a first speed when the evaporation source unit moves to a first side in the moving direction is different from a second speed when the evaporation source unit moves to a second side opposite to the first side,

the baffle plate blocks the first vapor deposition material from scattering to the substrate while the evaporation source unit moves to the second side.

7. The film forming apparatus according to claim 6, wherein,

the first vapor deposition material and the second vapor deposition material are allowed to scatter on the substrate while the evaporation source unit is moved to the second side.

8. The film forming apparatus according to claim 1 or 2, wherein,

the evaporation source unit moves at a constant speed while the substrate and the deposition material discharge range overlap in the movement direction.

9. The film forming apparatus according to claim 8, wherein,

the evaporation source unit changes in speed when the side that moves in the moving direction changes.

10. The film forming apparatus according to claim 1, wherein,

the film forming apparatus further includes first, second and third monitoring means for monitoring the discharge states of the vapor deposition substances from the first, second and third evaporation sources, respectively,

the first monitoring member, the first evaporation source, the second monitoring member, the second evaporation source, the third evaporation source, and the third monitoring member are arranged in this order in a moving direction of the evaporation source unit during film formation.

11. A film forming apparatus comprising an evaporation source unit for forming a film on a substrate while moving the evaporation source unit,

12. A film forming method, characterized in that,

film formation is performed on a substrate using the film formation apparatus according to any one of claims 1, 2 and 11.