CN115537733A

CN115537733A - Film forming apparatus and film forming method

Info

Publication number: CN115537733A
Application number: CN202210710422.2A
Authority: CN
Inventors: 菅原由季; 原雄太郎; 山田尚人
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2021-06-30
Filing date: 2022-06-22
Publication date: 2022-12-30
Also published as: KR20230004275A; JP2023006678A

Abstract

The invention provides a film forming apparatus and a film forming method for uniformly forming a film on a relatively moving substrate. The film forming apparatus includes: a film forming unit for forming a film on a substrate relatively moving in a moving direction; and an adjustment member that adjusts a positional relationship between the substrate and the mask. The film forming unit includes a first unit and a second unit each including at least one evaporation source that emits an evaporation material. The film formation by the first unit and the film formation by the second unit are performed in either a first state in which the mask is overlapped with the first region of the substrate by the adjustment member or a second state in which the mask is overlapped with the second region of the substrate by the adjustment member.

Description

Film forming apparatus and film forming method

Technical Field

The present invention relates to a film deposition apparatus and a film deposition method.

Background

In the production of an organic EL display or the like, a thin film is formed on a substrate by depositing a vapor deposition material discharged from an evaporation source onto the substrate. Patent document 1 discloses a technique for forming a film on a rotating substrate using a plurality of evaporation sources.

Prior art documents

Patent document

Patent document 1: japanese patent laid-open publication No. 2019-218623

Disclosure of Invention

Problems to be solved by the invention

However, in recent years, from the viewpoint of improving production efficiency and the like, a substrate to be subjected to film formation is required to be large. In order to form a film on a large substrate, it is considered to form a film while relatively moving a substrate and an evaporation source. However, in the above-described conventional technique, if the substrate is large in size, it is difficult to stably rotate the substrate, and a film cannot be uniformly formed on the substrate in some cases.

The invention provides a technique for uniformly forming a film on a substrate moving relatively.

Means for solving the problems

According to an aspect of the present invention, there is provided a film forming apparatus including:

a film forming unit for forming a film on a substrate relatively moving in a moving direction; and

an adjusting member for adjusting the positional relationship between the substrate and the mask,

it is characterized in that the preparation method is characterized in that,

the film forming unit includes a first unit and a second unit each including at least one evaporation source that emits an evaporation material,

the film formation by the first unit and the film formation by the second unit are performed in either a first state in which the mask is overlapped with the first region of the substrate by the adjustment member or a second state in which the mask is overlapped with the second region of the substrate by the adjustment member.

Further, according to another aspect of the present invention, there is provided a film formation method in a film formation apparatus, the film formation apparatus including:

an adjustment member that adjusts a positional relationship between the substrate and the mask so that the mask is in a first state in which the mask overlaps a first region of the substrate or in a second state in which the mask overlaps a second region of the substrate; and

a film forming unit for forming a film on the substrate relatively moving in the moving direction,

it is characterized in that the preparation method is characterized in that,

the film forming unit includes a first unit and a second unit each including at least one evaporation source,

the film forming method includes:

a first film forming step of performing, in the first state, film formation by the first unit and film formation by the second unit by the film forming unit;

an adjustment step of adjusting the positional relationship between the substrate and the mask by the adjustment member so that the substrate and the mask are in the second state; and

and a second film forming step of performing, in the second state, film formation by the first unit and film formation by the second unit by the film forming unit.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, a film can be uniformly formed on a substrate that moves relative to the substrate.

Drawings

Fig. 1 is a plan view schematically showing the structure of a film deposition apparatus according to an embodiment.

Fig. 2 is a front view schematically showing the structure of the film forming apparatus of fig. 1.

Fig. 3 is a perspective view schematically showing the structure of the film forming unit.

Fig. 4 is a cross-sectional view schematically showing the structure of an evaporation source.

Fig. 5 is a diagram illustrating the arrangement of the evaporation sources and the monitoring device.

Fig. 6 is a plan view schematically showing the structure of a film forming unit according to an embodiment.

Fig. 7 (a) and (B) are sectional views taken along line I-I of fig. 6, and are views for explaining the film forming operation by the film forming unit.

Fig. 8 is a diagram illustrating a film thickness distribution in the substrate moving direction.

FIG. 9 is an explanatory view of the operation of the film forming apparatus.

FIG. 10 is an explanatory view of the operation of the film forming apparatus.

Fig. 11 (a) is an overall view of the organic EL display device, and (B) is a view showing a cross-sectional structure of one pixel.

Description of the reference numerals

1: film forming apparatus, 10: film forming unit, 12: evaporation source, 14: monitoring device, 20: moving unit, 30: support unit, 100: substrate, 101: and (5) masking.

Detailed Description

Hereinafter, the embodiments will be described in detail with reference to the drawings. The following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, all of the plurality of features are not limited to the features essential to the invention, and a plurality of features may be arbitrarily combined. In the drawings, the same or corresponding components are denoted by the same reference numerals, and redundant description thereof is omitted.

[ first embodiment ]

[ outline of film Forming apparatus ]

Fig. 1 is a plan view schematically showing the structure of a film deposition apparatus 1 according to an embodiment. Fig. 2 is a front view schematically showing the structure of the film formation apparatus 1 shown in fig. 1. In each drawing, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates a vertical direction (vertical direction).

The film forming apparatus 1 is a film forming apparatus that performs vapor deposition while moving an evaporation source relative to a substrate. The film forming apparatus 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example, and a plurality of the film forming apparatuses are arranged in parallel to constitute a production line thereof. As a material of the substrate to be vapor-deposited in the film formation device 1, glass, resin, metal, or the like can be appropriately selected, and a material in which a resin layer such as polyimide is formed on glass is preferably used. As the vapor deposition substance, an organic material, an inorganic material (metal, metal oxide, or the like), or the like can be used. The film formation apparatus 1 is applicable to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays), thin film solar cells, and organic photoelectric conversion elements (organic thin film imaging elements), optical members, and the like, and particularly to a manufacturing apparatus for manufacturing organic EL panels. In the present embodiment, the film deposition apparatus 1 performs film deposition on a G8H-sized glass substrate (1100 mm × 2500mm, 1250mm × 2200 mm), but the size of the substrate on which film deposition is performed by the film deposition apparatus 1 can be set as appropriate.

The film deposition apparatus 1 includes a film deposition unit 10 (evaporation source unit), a moving unit 20, and a plurality of

support units

30A and 30B (hereinafter, these are collectively referred to as the support unit 30, and the same applies to the constituent elements thereof and the like). The film forming unit 10, the moving unit 20, and the supporting unit 30 are disposed inside a chamber 45 maintained to be vacuum during use. In the present embodiment, the plurality of

support units

30A and 30B are provided at upper portions in the chamber 45 apart from each other in the Y direction, and the film formation unit 10 and the movement unit 20 are provided below the support units. The chamber 45 is provided with a plurality of

substrate transfer ports

44A and 44B for transferring the substrate 100 in and out. In the present embodiment, "vacuum" refers to a state filled with a gas having a pressure lower than the atmospheric pressure, in other words, a reduced pressure state.

The film formation device 1 includes a power supply 41 for supplying power to the film formation unit 10, and an electrical connection portion 42 for electrically connecting the film formation unit 10 and the power supply 41. The electrical connection portion 42 is configured such that electrical wiring passes through the inside of the movable arm in the horizontal direction, and as described later, the electrical power from the power source 41 can be supplied to the film formation unit 10 moving in the XY direction.

The film deposition apparatus 1 includes a control unit 43 that controls operations of the respective components. For example, the control unit 43 may include a processor typified by a CPU, a memory such as a RAM or a ROM, and various interfaces. For example, the control unit 43 reads out a program stored in the ROM to the RAM and executes the program, thereby realizing various processes of the film formation apparatus 1.

[ supporting unit ]

The support unit 30 supports the substrate 100 and the mask 101, and performs position adjustment thereof. The support unit 30 includes a substrate support portion 32, a position adjustment portion 34, and a mask support portion 36.

The substrate support portion 32 supports the substrate 100. In the present embodiment, the substrate support portion 32 supports the substrate 100 so that the longitudinal direction of the substrate 100 is the X direction and the short direction of the substrate 100 is the Y direction. For example, the substrate support portion 32 may support the substrate 100 by holding the edge of the substrate 100 at a plurality of positions, or may support the substrate 100 by adsorbing the substrate 100 by an electrostatic chuck or the like.

The position adjustment unit 34 adjusts the positional relationship between the substrate 100 and the mask 101. In the present embodiment, the position adjusting unit 34 moves the substrate supporting unit 32 in a state of supporting the substrate 100, thereby adjusting the positional relationship between the substrate 100 and the mask 101. However, the positional relationship between the substrate 100 and the mask 101 may be adjusted by moving the mask 101. The position adjusting portion 34 includes a fixed portion 341 fixed to the chamber 45, and a movable portion 342 that supports the substrate supporting portion 32 and moves relative to the fixed portion 341. The movable portion 342 moves in the X direction with respect to the fixed portion 341, thereby moving the substrate 100 supported by the substrate support portion 32 in the X direction and adjusting the approximate positional relationship between the substrate 100 and the mask 101 in the X direction. The movable portion 342 includes a mechanism for moving the substrate support portion 32 supported thereon in the XY direction in order to perform precise position adjustment (alignment) of the substrate 100 and the mask 101. As for a specific method of alignment, a well-known technique can be employed, and thus detailed description is omitted. The movable portion 342 moves the substrate support portion 32 in the Z direction, thereby adjusting the positional relationship between the substrate 100 and the mask 101 in the Z direction. Known techniques such as a rack and pinion mechanism and a ball screw mechanism can be applied to the movable portion 342 as appropriate.

The mask support 36 supports the mask 101. In the present embodiment, the mask support portion 36 supports the mask 101 so that the mask 101 is positioned at the center in the X direction in the chamber 45. For example, the mask support portion 36 may support the mask 101 by sandwiching the edge of the mask 101 at a plurality of locations.

The film deposition apparatus 1 of the present embodiment is a so-called two-stage film deposition apparatus 1 capable of supporting a plurality of

substrates

100A and 100B by a plurality of

support units

30A and 30B. For example, during the vapor deposition on the substrate 100A supported by the support unit 30A, the substrate 100 supported by the support unit 30B and the mask 101 can be aligned, and the film formation process can be performed efficiently. Hereinafter, the mounting table on the support unit 30A side may be referred to as a mounting table a, and the mounting table on the support unit 30B side may be referred to as a mounting table B.

In the present embodiment, during film formation, substantially half of the substrate 100 is overlapped with the mask 101 by the support unit 30. Therefore, a not-shown suppressing plate for suppressing the deposition of the vapor deposition substance to a portion of the substrate 100 not overlapping with the mask 101 at the time of film formation is appropriately provided inside the chamber 45.

[ Mobile Unit ]

The moving unit 20 includes an X-direction moving unit 22 that moves the film formation unit 10 in the X direction and a Y-direction moving unit 24 that moves the film formation unit 10 in the Y direction.

The X-direction moving unit 22 includes a motor 221, a pinion gear 222 attached to a shaft member rotated by the motor 221, and a guide member 223 as components provided in the film forming unit 10. The X-direction moving unit 22 includes a frame member 224 supporting the film forming unit 10, a rack 225 formed on the upper surface of the frame member 224 and engaged with the pinion 222, and a guide rail 226 on which the guide member 223 slides. The film deposition apparatus 10 moves in the X direction along the guide rail 226 by the pinion 222 rotated by the driving of the motor 221 meshing with the rack 225.

The Y-direction moving portion 24 includes two

support members

241A and 241B extending in the Y-direction and separated in the X-direction. The two

support members

241A and 241B support the short sides of the frame member 224 of the X-direction moving portion 22. The Y-direction moving unit 24 includes a motor, a driving mechanism such as a rack and pinion mechanism, not shown, and moves the film formation unit 10 in the Y direction by moving the frame member 224 in the Y direction with respect to the two

support members

241A and 241B. The Y-direction moving unit 24 moves the film formation unit 10 in the Y direction between a position below the substrate 100A supported by the support unit 30A and a position below the substrate 100B supported by the support unit 30B.

[ film Forming Unit ]

Fig. 3 is a perspective view schematically showing the structure of the film forming unit 10. The film forming unit 10 includes a plurality of evaporation sources 12a to 12f (hereinafter, these are collectively referred to as an evaporation source 12, and the same applies to their constituent elements, etc.), a plurality of monitoring devices 14a to 14f (hereinafter, these are collectively referred to as a monitoring device 14, and the same applies to their constituent elements, etc.), and a suppression unit 16.

Reference is also made to fig. 4. Fig. 4 is a cross-sectional view schematically showing the structure of the evaporation source 12. The evaporation source 12 evaporates and discharges the evaporation material. Each evaporation source 12 includes a material container 121 (crucible) and a heating section 122.

The material container 121 contains a vapor deposition material therein. A discharge unit 1211 for discharging the evaporated vapor deposition material is formed above the material container 121. In the present embodiment, the discharge unit 1211 is an opening formed on the upper surface of the material container 121, but may be a cylindrical member or the like. Alternatively, the material container 121 may be provided with a plurality of discharge units 1211.

The heating unit 122 heats the vapor deposition material contained in the material container 121. The heating unit 122 is provided to cover the material container 121. In the present embodiment, a sheath heater using an electric heating wire is used as the heating unit 122, and fig. 4 shows a cross section of the sheath heater when the electric heating wire is wound around the material container 121.

The heating section 122 controls the heating of the deposition material by the control section 43. In the present embodiment, each of the plurality of evaporation sources 12 has the material container 121 and the heating unit 122 independently. Therefore, the control section 43 can independently control the evaporation of the vapor deposition material by the plurality of evaporation sources 12.

The plurality of monitoring devices 14 monitor the discharge state of the vapor deposition material from the plurality of evaporation sources 12. In the present embodiment, 6 monitoring devices 14a to 14f are provided. The monitoring devices 14a to 14c are housed in the housing 145a, and the monitoring devices 14d to 14f are housed in the housing 145 b. The

housings

145a and 145b are suitably provided with openings for allowing the vapor deposition material to enter therein so that the vapor deposition material discharged from each evaporation source 12 to be monitored can reach each monitoring device 14.

The monitoring device 14 of the present embodiment includes a crystal resonator 143 (see fig. 5) as a film thickness sensor inside a case 141 (see fig. 5). The vapor deposition material discharged from the evaporation source 12 is introduced through an introduction section 142 (see fig. 5) formed in the case 141 and adheres to the crystal resonator 143. The frequency of the crystal oscillator 143 varies depending on the amount of vapor deposition of the vapor deposition substance. Therefore, the control section 43 can calculate the film thickness of the vapor deposition material deposited on the substrate 100 by monitoring the number of vibrations of the crystal oscillator 143. Since the amount of the vapor deposition material adhering to the crystal resonator 143 per unit time is correlated with the amount of the vapor deposition material discharged from the evaporation sources 12, the discharge state of the vapor deposition material from the plurality of evaporation sources 12 can be monitored as a result. In the present embodiment, the output of each heating unit 122 of each evaporation source 12 can be controlled more appropriately according to the result of monitoring the state of emission of the vapor deposition material from each evaporation source 12 independently by each monitoring device 14. This enables effective control of the thickness of the vapor deposition material deposited on the substrate 100.

In the present embodiment, the film formation unit 10 forms a film on the substrate 100 while being moved in the X direction (moving direction) by the moving unit 20. However, film formation can also be performed using an evaporation source that is fixedly disposed with respect to the moving substrate 100. That is, the film forming unit 10 may be configured to form a film on the substrate 100 relatively moving in the moving direction.

The suppressing section 16 suppresses the vapor deposition material discharged from the plurality of evaporation sources 12 from scattering to the monitoring device 14 which is not associated therewith. Details will be described later.

[ arrangement of Evaporation Source and monitoring device ]

Fig. 5 is a diagram illustrating the arrangement of the evaporation source 12 and the monitoring device 14. In the present embodiment, the evaporation sources 12a to 12c are arranged in the Y direction, that is, in the width direction of the substrate 100 intersecting with the relative movement direction of the substrate 100 and the film formation unit 10. The evaporation sources 12d to 12f are arranged in the Y direction at positions separated from the evaporation sources 12a to 12c in the X direction. Further, a plurality of monitoring devices 14 are provided outside the plurality of evaporation sources 12 in the Y direction.

Here, attention is paid to two evaporation sources 12a to 12b and two monitoring devices 14a to 14b. The evaporation sources 12a to 12b are arranged along the Y direction, and the monitoring devices 14a to 14b are arranged along the X direction intersecting the Y direction. In this way, since the arrangement direction of the evaporation sources 12a to 12b intersects with the arrangement direction of the corresponding monitoring devices 14a to 14b, they can be arranged compactly. For example, the evaporation sources 12a to 12b and the monitoring devices 14a to 14b can be arranged compactly in the X direction, compared to the case where the monitoring devices 14a to 14b are arranged in the Y direction and separated from the evaporation sources 12a to 12b in the X direction, similarly to the evaporation sources 12a to 12b. Therefore, the size of the chamber 45 can be suppressed from increasing in the X direction, that is, in the moving direction of the film forming unit 10 during film formation. In addition, even when the dimension of the chamber 45 in the X direction is not changed, it is possible to suppress the limitation of the movement range of the film formation unit 10 in the X direction due to the increase in the size of the film formation unit 10 in the X direction. In addition, in the present embodiment, since the evaporation source 12a and the monitoring device 14a are disposed so as to overlap in the X direction, they can be disposed more compactly in the X direction.

In the present embodiment, the monitoring devices 14a to 14b are arranged along the moving direction of the film forming unit 10, but the arrangement direction is not limited thereto. For example, the arrangement direction of the monitoring devices 14a to 14b may include a component in the Z direction. That is, the monitoring device 14a and the monitoring device 14b may be disposed at different heights. The arrangement direction of the monitoring devices 14a to 14b may have a predetermined angle, not perpendicular to the X direction in a plan view.

Next, attention is paid to the three evaporation sources 12a to 12c and the three monitoring devices 14a to 14c. The monitoring devices 14a to 14b corresponding to the evaporation sources 12a to 12b are arranged at positions on the side where the evaporation source 12a is provided and outside the evaporation source 12a in the Y direction. The monitoring device 14c corresponding to the evaporation source 12c is disposed on the side where the evaporation source 12c is provided and outside the evaporation source 12c in the Y direction. That is, the monitoring devices 14a to 14c are disposed separately on both outer sides of the evaporation sources 12a to 12c in the Y direction. This enables the monitoring devices 14a to 14c to be compactly arranged in the X direction. Specifically, the monitoring devices 14a to 14c are arranged in a compact manner in the X direction, as compared with a case where the monitoring devices 14a to 14c are arranged in the X direction and are provided on one side outside the evaporation sources 12a to 12c in the Y direction. In the present embodiment, the evaporation source 12a and the monitoring device 14a are arranged to overlap in the X direction, and the evaporation source 12c and the monitoring device 14c are arranged to overlap in the X direction, so that the monitoring devices 14a to 14c are arranged more compactly in the X direction.

Here, the evaporation source 12b arranged at the center among the three evaporation sources 12a to 12c arranged in the width direction of the substrate 100 may be set so that the film formation rate or the amount of vapor deposition material discharged per unit time is smaller than those of the

evaporation sources

12a and 12c on both sides. This can reduce variation in film thickness in the width direction of the substrate 100.

Next, attention is focused on the four evaporation sources 12a to 12b, 12e to 12f and the four monitoring devices 14a to 14b, 14e to 14f. The evaporation sources 12e to 12f are provided apart from the evaporation sources 12a to 12b in the X direction. The monitoring devices 14a to 14b corresponding to the evaporation sources 12a to 12b are provided on one of the outer sides (+ Y side) of the plurality of evaporation sources 12. Further, the monitoring devices 14e to 14f corresponding to the evaporation sources 12e to 12f are provided on the other side (Y side) outside the plurality of evaporation sources 12. In this way, when the plurality of evaporation sources 12 are separately arranged in two rows in the X direction, the monitoring devices 14 corresponding to the respective rows of evaporation sources 12 are separately arranged on both outer sides of the plurality of evaporation sources 12, whereby the plurality of monitoring devices 14 can be compactly arranged in the X direction.

In the present embodiment, the evaporation sources 12a to 12c and the evaporation sources 12d to 12f emit different vapor deposition materials. This allows two materials to be simultaneously vapor deposited, thereby allowing co-vapor deposition for forming a mixed film on the substrate 100. For example, vapor deposition may be performed by the evaporation sources 12a to 12c in a state where the scattering of the vapor deposition material from the evaporation sources 12d to 12f to the substrate 100 is blocked by a shutter not shown, and then vapor deposition may be performed by the evaporation sources 12d to 12e in a state where the scattering of the vapor deposition material from the evaporation sources 12a to 12c to the substrate 100 is blocked by a shutter not shown. Thereby, two thin films can be formed on the substrate by one film forming unit 10.

[ Structure of inhibiting portion ]

Refer to fig. 3 and 5. The suppression section 16 includes a plurality of plate members 161a to 161i (hereinafter, these are collectively referred to as the plate member 161, and the same applies to the later-described permission section 162). The plate member 161 is a plate-like member that suppresses the vapor deposition material from scattering from each evaporation source 12 to the monitoring device 14 that does not correspond thereto. For example, the plate-shaped member 161a suppresses the vapor deposition material from scattering from the evaporation source 12a to the monitoring device 14 (e.g., the monitoring device 14 b) other than the monitoring device 14 a. With the plate member 161, each monitoring device 14 can monitor the state of emission of the vapor deposition material from the evaporation source 12 to be monitored, while reducing the influence of the evaporation sources 12 other than the evaporation source 12 to be monitored.

Here, focusing on the evaporation source 12b, the monitoring device 14a, and the plate member 161f, the plate member 161f is provided to suppress the vapor deposition substance from scattering from the evaporation source 12b to the monitoring device 14 a. Thus, the monitoring device 14a can monitor the state of the vapor deposition material discharged from the evaporation source 12a with the influence of the evaporation source 12b reduced. Further, the scattering of the vapor deposition material from the evaporation sources 12c to 12f to the monitoring device 14a is also suppressed by the other plate member 161. For example, the scattering of the vapor deposition material from the evaporation source 12d to the monitoring device 14a is suppressed by the plate member 161 d.

In the present embodiment, the evaporation source 12b is disposed at a position farther from the monitoring device 14b than the evaporation source 12a in the Y direction. Further, the plate member 161f is disposed between the evaporation source 12a and the evaporation source 12b. Further, the plate member 161f is formed with a allowing portion 162b that allows the vapor deposition material to scatter from the evaporation source 12b to the monitoring device 14b. When the plate member 161f is provided to suppress the scattering of the vapor deposition material from the evaporation source 12b to the monitoring device 14a, the scattering of the vapor deposition material from the evaporation source 12b to the monitoring device 14b may be suppressed. In the present embodiment, since the allowing portion 162b is provided in the plate member 161f, the vapor deposition material is scattered from the evaporation source 12b to the monitoring device 14b via the allowing portion 162b, and therefore the evaporation source 12b can be monitored by the monitoring device 14b.

In the present embodiment, the plate member 161f is provided with a cylindrical portion as the allowing portion 162b. Specifically, the cylindrical portion is provided so as to surround a virtual straight line Vb connecting the emission portion 1211b of the evaporation source 12b and the crystal resonator 143b as the deposition portion of the vapor deposition substance of the monitoring device 14b. In other words, the cylindrical portion is provided such that the imaginary straight line Vb passes through the inside of the cylindrical portion without passing through the plate member 161f and the member itself of the cylindrical portion formed on the plate member 161 f. This improves the directivity of the vapor deposition material discharged from the evaporation source 12b, and therefore the vapor deposition material easily reaches the monitoring device 14b. Therefore, the monitoring device 14b can more accurately monitor the discharge state of the film material from the evaporation source 12b.

The allowing portion 162b may be an opening formed in the plate member 161 f. In this case, the opening may be formed in a region including a position on the plate member 161f through which the imaginary straight line Vb passes. When the allowing portion 162b is open, the plate member 161f can be easily processed, and therefore, the manufacturing cost and the like can be reduced.

Although the allowing section 162b is described here with a focus on the evaporation source 12b and the plate member 161f, the allowing

sections

162a, 162c to 162f that allow the vapor deposition material to scatter from the

evaporation sources

12a, 12c to 12f to the

monitoring devices

14a, 14c to 14f are similarly provided in the plate members 161. In the present embodiment, the other

allowable portions

162a, 162c to 162f are also provided so that the virtual straight lines Va, vc to Vf are not physically blocked by any member.

[ second embodiment ]

Next, the film deposition apparatus 9 according to the second embodiment will be described. The film deposition apparatus 9 is different from the film deposition apparatus 1 of the first embodiment in the configuration of the film deposition unit. Hereinafter, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof may be omitted.

Fig. 6 is a plan view schematically showing the structure of a film forming unit 90 according to an embodiment. Fig. 7 (a) and 7 (B) are sectional views taken along line I-I of fig. 6, and are views for explaining the film forming operation of the film forming unit 90. Fig. 7 (a) shows a film forming operation of the unit 90B described later, and fig. 7 (B) shows a film forming operation of the unit 90A described later. In the present embodiment, the film formation unit 90 includes 7 evaporation sources 92a to 92g (hereinafter, these are collectively referred to as the evaporation source 92). The plurality of evaporation sources 92 are composed of three rows, one row of evaporation sources 92a to 92c, one row of evaporation sources 92d to 92e, and one row of evaporation sources 92f to 92 g. In the present embodiment, the plurality of evaporation sources 92 evaporate different evaporation materials for each column. In this embodiment, the evaporation sources 92a to 92c evaporate Ag, the evaporation sources 92d to 92e evaporate Mg, and the evaporation sources 92f to 92g evaporate LiF.

In the present embodiment, the

monitoring devices

94a, 94c to 94g of the plurality of monitoring devices 94 are disposed at both outer sides of the plurality of evaporation sources 92 so as to be separated in the Y direction, but the monitoring device 94b is provided in a region surrounded by the evaporation sources 92d to 92 g. Therefore, the film formation unit 90 is prevented from being enlarged in the X direction by the arrangement of the monitoring device 94 b. Focusing on the two evaporation sources 92a to 92b and the two monitoring devices 94a to 94b, the evaporation sources 92a to 92b are arranged in the Y direction, and the monitoring devices 94a to 94b are arranged in directions having X-direction components and Y-direction components, and these arrangement directions intersect.

In the present embodiment, the evaporation sources 92A to 92e constitute one unit 90A, and the evaporation sources 92f to 92g constitute the other unit 90B. In the present embodiment, the film formation unit 90 performs film formation on the substrate 100 for each of these units. That is, in the present embodiment, the unit 90A performs co-deposition of Ag and Mg, and the unit 90B performs single deposition of LiF. The film forming unit 90 performs film formation by each of these units using the

shutters

98A and 98B.

The shutter 98A is displaced between a blocking position (fig. 7 (a)) at which the vapor deposition material is blocked from being scattered from the evaporation sources 92A to 92e of the unit 90A toward the substrate 100, and a permitting position (fig. 7 (B)) at which the vapor deposition material is permitted to be scattered from the evaporation sources 92A to 92e of the unit 90A toward the substrate 100. The shutter 98B is displaced between a blocking position (fig. 7B) at which the vapor deposition material is blocked from being scattered from the evaporation sources 92f to 92g of the unit 90B to the substrate 100 and a permitting position (fig. 7 a) at which the vapor deposition material is permitted to be scattered from the evaporation sources 92f to 92g of the unit 90B to the substrate 100. Therefore, by performing film formation with the shutter 98A at the allowing position and the shutter 98B at the blocking position, film formation of the evaporation sources 92A to 92e by the unit 90A can be performed. Further, by performing film formation with the shutter 98B at the allowing position and the shutter 98A at the blocking position, film formation from the evaporation sources 92f to 92g of the unit 90B can be performed.

[ emission direction of Evaporation Source ]

Fig. 8 is a diagram illustrating a film thickness distribution in the moving direction (X direction) of the substrate 100. Specifically, fig. 8 shows the film thickness distribution of the vapor deposition material discharged from the evaporation sources 92 in each column when co-evaporation is performed by the unit 90A. The pattern PT1 indicates a film thickness distribution when the direction of discharge of the vapor deposition substance from the discharge portion 9211 of the evaporation source 92 is vertically upward. The vapor deposition material can be discharged from the discharging portions 9211 so as to spread within a certain range, but here, the direction in which the discharging portions 9211 point is referred to as a discharging direction.

When the vapor deposition material is discharged in the vertical upward direction, the evaporation sources 92a to 92c and the evaporation sources 92d to 92e are separated in the X direction (moving direction) of the substrate 100, and therefore, the apex of the film thickness distribution in the X direction is shifted. In this case, depending on the relationship between the film formation region, which is the region where the substrate 100 and the mask 101 overlap, and the movement start position and end position of the film formation unit 90, film formation may be performed with a different mixing ratio of Ag and Mg in the X direction of the substrate 100. That is, the vapor deposition substance deposited on the substrate 100 may be deviated in the X direction.

Therefore, in the present embodiment, as shown by the pattern PT2, the evaporation sources 92 are arranged so that the discharge direction of the vapor deposition material is inclined. This makes it possible to match or approach the film thickness distribution of the vapor deposition materials discharged from the evaporation sources 92a to 92c with or close to the apex of the film thickness distribution of the vapor deposition materials discharged from the evaporation sources 92d to 92e in the X direction. This can suppress variation in the X direction (moving direction) of the vapor deposition material deposited on the substrate 100.

In the present embodiment, the evaporation sources 92a to 92c are arranged so that the direction of discharge of the vapor deposition material is directed toward the evaporation sources 92d to 92e in the X direction (moving direction). The evaporation sources 92d to 92e are arranged so that the direction of discharge of the vapor deposition material is directed toward the evaporation sources 92a to 92c in the X direction (moving direction).

In addition, when the discharge direction of the vapor deposition substance is inclined, the evaporation source 92 itself may be inclined, or the shape of the discharge portion 9211 in which the discharge direction is inclined may be adopted. For example, when the discharging portion 9211 has a cylindrical shape, the discharging portion 9211 may be configured to be inclined in the axial direction of the cylinder.

[ film Forming Process ]

Next, a film formation process using the film formation apparatus 9 will be described. Fig. 9 and 10 are explanatory views of the operation of the film formation apparatus 9 in the film formation process.

The state ST1 shows a state in which the substrate 100A and the substrate 100B in the initial state are carried into the film formation apparatus 9 and are aligned with the mask 101A and the mask 101B, respectively. Here, the substrate 100A on the stage a side is in a state where a region substantially halfway on the + X side in the X direction is covered with the mask 101A, and the substrate 100B on the stage B side is in a state where a region substantially halfway on the-X side in the X direction is covered with the mask 101B. The film forming unit 90 is located on the stage a side, and is located at a position X1 on the-X side in the X direction with respect to a film formation region, which is a region where the substrate 100A and the mask 101A overlap each other.

The state ST2 is a state after the film formation unit 90 has formed a film on the substrate 100A while moving to the + X side in the X direction. The film formation unit 90 moves from the position X1 to a position X2 on the + X side in the X direction with respect to the film formation region. The state ST3 is a state after the film formation unit 90 has formed a film on the substrate 100A while moving toward the-X side in the X direction. That is, while the state ST1 to the state ST3 are changed, the film formation unit 90 forms a film on the substrate 100A while reciprocating between the position x1 and the position x2 by the moving unit 20 once.

In addition, although the reciprocating operation is described once here, the film forming unit 90 may perform film formation while repeating the reciprocating operation twice in total. For example, the film formation unit 90 may perform the film formation by the unit 90B while reciprocating once in the X direction, and then perform the film formation by the unit 90A while reciprocating once in the X direction. In this case, since film formation by the unit 90A is performed once, the influence of the positional difference in the X direction between the evaporation sources 92A to 92c and the evaporation sources 92d to 92e is reduced, and the mixing ratio of Ag and Mg as vapor deposition substances adhering to the substrate 100A can be made uniform or close.

For example, the film forming unit 90 may perform the film formation by the unit 90B in the outward path of the first reciprocation, and perform the film formation by the unit 90A in the return path of the first reciprocation and the second reciprocation. Thus, when the film thickness of the mixed film of Ag and Mg is to be made thicker than the film thickness of LiF, more time can be secured for film formation by the cell 90A.

The film forming unit 90 may perform film formation by the unit 90B in the outward path and film formation by the unit 90A in the return path while the film forming apparatus 1 reciprocates in the X direction. Alternatively, the film formation unit 90 may perform film formation by the unit 90A and the unit 90B while reciprocating 3 times or more in the X direction. In short, in the present embodiment, both the film formation by the cell 90A and the film formation by the cell 90B are performed in a state where the substantially half region of the substrate 100A on the + X side in the X direction is covered with the mask 101A.

In the present embodiment, the film formation unit 90 is set at the position x1 and the position x2 so as not to overlap a film formation region, which is a region where the substrate 100A and the mask 101A overlap each other in a plan view. That is, the film formation unit 90 reciprocates so as to completely pass through the film formation region in a plan view. However, at the position x1 and the position x2, at least a part of the film formation unit 90 may be arranged so as to overlap the film formation region in a plan view.

The state ST4 indicates a state in which the film formation unit 90 moves from the stage a to the stage B. The film forming unit 90 is moved in the Y direction (the width direction of the substrate 100) by the Y-direction moving unit 24 of the moving unit 20. Here, the film formation unit 90 moves in the Y direction from a position Y1 on the stage a side to a position Y2 on the stage B side.

The state ST5 is a state after the film formation unit 90 has formed a film on the substrate 100B while moving to the + X side in the X direction. The film formation unit 90 moves from the position X1 to the position X2 in the X direction. The state ST5 is also a state in which the substrate 100A is moved in the X direction on the mounting table a. The substrate 100A is moved from a position where approximately half of the + X side thereof is covered with the mask 101A to a position where approximately half of the-X side thereof is covered with the mask 101A by the position adjusting portion 34A of the supporting unit 30A. After the substrate 100A is roughly moved in the X direction, the substrate 100A and the mask 101A are precisely aligned by alignment using a camera or the like, not shown, and then the substrate 100A and the mask 101A are superimposed.

The state ST6 is a state after the film formation unit 90 has formed a film on the substrate 100B while moving to the-X side in the X direction. That is, while the state ST4 to the state ST6 change, the film formation unit 90 performs film formation on the substrate 100B while reciprocating between the position x1 and the position x2 by the moving unit 20 once. In addition, the film formation unit 90 may form a film on the substrate 100B while reciprocating 2 or more times, as in the case where the state ST1 to the state ST3 are changed.

The state ST7 represents a state in which the film formation unit 90 moves from the stage B to the stage a. Here, the film formation unit 90 moves from the position Y2 to the position Y1 in the Y direction. The state ST8 is a state after the film formation unit 90 has formed a film on the substrate 100A while moving to the + X side in the X direction, and the state ST9 is a state after the film formation unit 90 has formed a film on the substrate 100A while moving to the-X side in the X direction. That is, while the state ST7 to the state ST9 are changed, the film formation unit 90 forms a film on the substrate 100A while reciprocating between the position x1 and the position x2 by the moving unit 20 once. The film forming unit 90 can operate in the same manner as in the case of the change of the state ST1 to the state ST 3. In short, in the present embodiment, both the film formation by the cell 90A and the film formation by the cell 90B are performed in a state where the substantially half area on the-X side in the X direction of the substrate 100A is covered with the mask 101A.

The state ST8 is also a state in which the substrate 100B is moved in the X direction on the mounting table B. The substrate 100B is moved from a position where approximately half of the-X side thereof is covered with the mask 101B to a position where approximately half of the + X side thereof is covered with the mask 101B by the position adjusting portion 34B of the supporting unit 30B. After the substrate 100B is roughly moved in the X direction, the substrate 100B and the mask 101B are precisely aligned by alignment using a camera or the like, not shown, and then the substrate 100B and the mask 101B are superimposed.

The state ST10 indicates a state in which the film formation unit 90 is moved from the stage a to the stage B. The operation and the like of the film formation unit 90 here are the same as the change from the state ST3 to the state ST 4. The state ST11 is a state after the film formation unit 90 has formed a film on the substrate 100B while moving to the + X side in the X direction, and the state ST12 is a state after the film formation unit 90 has formed a film on the substrate 100B while moving to the-X side in the X direction. That is, while the state ST10 to the state ST12 are changed, the film formation unit 90 forms a film on the substrate 100B while reciprocating the movement unit 20 once between the position x1 and the position x2. The film formation unit 90 can operate in the same manner as in the case of the change of the state ST1 to the state ST 3.

The state ST11 is also a state in which the substrate 100A is carried out of the film deposition apparatus 9 on the mounting table a. The state ST12 is also a state after the substrate 100A is carried out from the film formation device 9. In this way, the substrate 100A is carried out to the outside of the film forming apparatus 9 after film formation is performed on the region substantially in half on the + X side in the X direction and the region substantially in half on the-X side in the X direction.

In this way, the film formation by the cell 90A and the film formation by the cell 90B are performed in both a state where the mask 101 overlaps substantially a half of the region on the + X side of the substrate 100 and a state where the mask 101 overlaps substantially a half of the region on the-X side of the substrate 100. Therefore, even in the case of a large substrate 100, film formation can be performed by both the unit 90A and the unit 90B. Specifically, when the substrate 100 is increased in size, the mask 101 having the same size as the substrate 100 may not be manufactured due to the rigidity of the mask 101. However, according to the present embodiment, even when the mask 101 is smaller than the substrate 100, film formation can be performed over substantially the entire area of the substrate 100. Further, since the relative movement between the substrate 100 and the film formation unit 90 is linear movement, the relative movement can be stably performed at a constant speed as compared with rotational movement or the like, and the film formation can be uniformly performed on the substrate 100. In the present embodiment, since the film formation unit 90 moves, even if the substrate 100 is a large substrate, the relative movement therebetween can be stably performed.

In the present embodiment, the positions of the substrate 100A and the mask 101A are adjusted on the mounting table a while the film formation is performed on the mounting table B by the film formation unit 90 (state ST4 to state ST 6), and therefore, the film formation process can be performed efficiently. The position adjustment of the substrate 100A and the mask 101A on the mounting table a may be performed during the Y-direction movement of the film formation unit 90 (state ST4 to state ST5, state ST6 to state ST 7).

[ method for manufacturing electronic device ]

Next, an example of a method for manufacturing an electronic device is described. Hereinafter, a structure and a manufacturing method of an organic EL display device are exemplified as an example of an electronic device. In this example, a plurality of film forming apparatuses 1 illustrated in fig. 1 are installed in a production line.

First, the organic EL display device manufactured will be described. Fig. 11 (a) is an overall view of the organic EL display device 50, and fig. 11 (B) is a view showing a cross-sectional structure of one pixel.

As shown in fig. 11 (a), a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix in a display region 51 of an organic EL display device 50. Each of the light emitting elements has a configuration having an organic layer sandwiched between a pair of electrodes, which will be described in detail later.

Here, the pixel is a minimum unit that can display a desired color in the display region 51. In the case of a color organic EL display device, the pixel 52 is constituted by a combination of a plurality of sub-pixels of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B that display different light emissions from each other. The pixel 52 is mostly configured by a combination of three kinds of sub-pixels of a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but the present invention is not limited thereto. The pixel 52 may include at least one sub-pixel, preferably two or more sub-pixels, and more preferably three or more sub-pixels. As the sub-pixels constituting the pixel 52, for example, a combination of four kinds of sub-pixels of a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element may be used.

Fig. 11 (B) is a partial cross-sectional view taken along line a-B of fig. 11 (a). The pixel 52 has a plurality of sub-pixels each including a first electrode (anode) 54, a hole transport layer 55, a red layer 56R, a green layer 56G, and a blue layer 56B on a substrate 53,

An electron transport layer 57, and a second electrode (cathode) 58. The hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red, green, and blue color layers 56R, 56G, and 56B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue colors, respectively.

In addition, the first electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common on the plurality of

light emitting elements

52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in fig. 11 (B), the hole transport layer 55 may be formed as a common layer over a plurality of sub-pixel regions, the upper red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region, and the upper electron transport layer 57 and the second electrode 58 may be formed as a common layer over a plurality of sub-pixel regions.

In addition, in order to prevent a short circuit between the adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 60 for protecting the organic EL element from moisture or oxygen is provided.

In fig. 11 (B), the hole transport layer 55 and the electron transport layer 57 are illustrated as one layer, but may be formed of a multilayer having a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Further, a hole injection layer having a band structure may be formed between the first electrode 54 and the hole transport layer 55 so that holes are smoothly injected from the first electrode 54 into the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

The red, green, and blue color layers 56R, 56G, and 56B may be formed of a single light-emitting layer, or may be formed by laminating a plurality of layers. For example, the red layer 56R may be formed of two layers, the upper layer may be formed of a red light-emitting layer, and the lower layer may be formed of a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be formed of a red light-emitting layer, and the upper layer may be formed of an electron transport layer or a hole blocking layer. By providing the layer on the lower side or the upper side of the light-emitting layer in this way, the color purity of the light-emitting element can be improved by adjusting the light-emitting position in the light-emitting layer and adjusting the optical path length.

Although the red layer 56R is illustrated here, the green layer 56G and the blue layer 56B may have the same structure. The number of layers may be 2 or more. Further, layers of different materials such as a light-emitting layer and an electron-blocking layer may be stacked, or layers of the same material such as 2 or more light-emitting layers may be stacked.

Next, an example of a method for manufacturing the organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is composed of 2 layers of the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

First, the substrate 53 on which the circuit (not shown) for driving the organic EL display device and the first electrode 54 are formed is prepared. The material of the substrate 53 is not particularly limited, and may be made of glass, plastic, metal, or the like. In the present embodiment, a substrate in which a film of polyimide is laminated on a glass substrate is used as the substrate 53.

A resin layer such as acrylic or polyimide is applied by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by photolithography so that an opening is formed in a portion where the first electrode 54 is formed, thereby forming the insulating layer 59. The opening corresponds to a light-emitting region where the light-emitting element actually emits light. In this embodiment, the large-sized substrate is processed until the insulating layer 59 is formed, and after the insulating layer 59 is formed, a dividing step of dividing the substrate 53 is performed.

The substrate 53 on which the insulating layer 59 is patterned is carried into the first film formation apparatus 1, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed using a mask having openings formed in each display region 51 of the panel portion of the organic EL display device which is finally one by one.

Subsequently, the substrate 53 on which the hole transport layer 55 has been formed is carried into the second film formation apparatus 1. The substrate 53 is aligned with the mask, the substrate is placed on the mask, and the red layer 56R is formed on the hole transport layer 55 at a portion of the substrate 53 where elements emitting red light are disposed (a region where red subpixels are formed). Here, the mask used in the second film formation chamber is a high-definition mask in which openings are formed only in a plurality of regions of a sub-pixel to be red out of a plurality of regions on the substrate 53 to be a sub-pixel of the organic EL display device. Thus, the red color layer 56R including the red light-emitting layer is formed only in the region of the sub-pixel to be red out of the regions to be the plurality of sub-pixels on the substrate 53. In other words, the red layer 56R is selectively formed in the region of the sub-pixel that is red, not in the region of the plurality of sub-pixels that is blue and in the region of the sub-pixel that is green on the substrate 53.

Similarly to the formation of the red color layer 56R, the green color layer 56G is formed in the third film formation device 1, and the blue color layer 56B is formed in the fourth film formation device 1. After the formation of the red, green, and blue color layers 56R, 56G, and 56B is completed, the electron transport layer 57 is formed in the entire display region 51 in the fifth film formation device 1. The electron transport layer 57 is formed as a layer common to the 3-

color layers

56R, 56G, and 56B.

The substrate on which the electron transport layer 57 is formed is moved to the sixth film formation apparatus 1, and the second electrode 58 is formed. In the present embodiment, the first to sixth film formation devices 1 to 1 form films of the respective layers by vacuum deposition. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth film formation device 1 may be formed by sputtering. Then, the substrate on which the second electrode 58 is formed is moved to a sealing device, and the protective layer 60 is formed by plasma CVD (sealing step), thereby completing the organic EL display device 50. Although the protective layer 60 is formed by the CVD method, the present invention is not limited thereto, and may be formed by the ALD method or the ink jet method.

Claims

1. A film forming apparatus includes:

it is characterized in that the preparation method is characterized in that,

2. The film forming apparatus according to claim 1,

the film forming unit is in either one of the first state and the second state,

reciprocating once between a first position and a second position in the moving direction while performing film formation by the first unit,

and reciprocating between the first position and the second position once in the moving direction while performing film formation by the second unit.

3. The film forming apparatus according to claim 1,

the film forming unit is in either one of the first state and the second state,

while performing the film formation by the first unit, moving the substrate from a first position to a second position in the moving direction,

and moving the substrate from the second position to the first position in the moving direction while performing the film formation by the second unit.

4. The film forming apparatus according to claim 3,

the film forming unit moves from the second position to the first position in the movement direction while performing film formation by the second unit in any one of the first state and the second state, and then reciprocates once between the first position and the second position in the movement direction while performing film formation by the second unit.

5. The film forming apparatus according to any one of claims 1 to 4,

forming a first thin film on a substrate by the first unit,

and forming a second thin film having a composition different from that of the first thin film on the substrate by the second unit.

6. The film forming apparatus according to any one of claims 1 to 4,

the at least one evaporation source of the first unit evaporates a first material,

the at least one evaporation source of the second unit includes an evaporation source that emits a second material and an evaporation source that emits a third material.

7. The film forming apparatus according to any one of claims 1 to 4,

the film forming apparatus includes:

a first shutter that is displaced between a first blocking position that blocks the evaporation material from being scattered from the at least one evaporation source of the first unit to the substrate and a first retracted position that allows the evaporation material to be scattered from the at least one evaporation source of the first unit to the substrate; and

and a second shutter plate that is displaced between a second blocking position that blocks the evaporation material from being scattered from the at least one evaporation source of the second unit toward the substrate and a second retracted position that allows the evaporation material to be scattered from the at least one evaporation source of the second unit toward the substrate.

8. The film forming apparatus according to claim 7,

the first shutter is located at the first retracted position and the second shutter is located at the second blocking position when film formation is performed by the first unit,

when the film formation is performed by the second unit, the first shutter is located at the first blocking position, and the second shutter is located at the second retracted position.

9. The film forming apparatus according to any one of claims 1 to 4,

the adjusting member is provided in plurality in a width direction of the substrate intersecting the moving direction,

the film forming unit moves in the width direction between a first width direction position where a film is formed on the substrate whose positional relationship is adjusted by one of the plurality of adjusting members and a second width direction position where a film is formed on the substrate whose positional relationship is adjusted by the other of the plurality of adjusting members.

10. A film forming method of a film forming apparatus, the film forming apparatus comprising:

an adjustment member that adjusts a positional relationship between the substrate and the mask so that the mask and the first region of the substrate overlap each other or so that the mask and the second region of the substrate overlap each other; and

it is characterized in that the preparation method is characterized in that,

the film forming method includes:

and a second film forming step of forming a film by the first unit and a film by the second unit by the film forming unit in the second state.