KR20230116697A - Film forming apparatus and film forming method - Google Patents

Abstract

[Problem] It is to suppress deterioration of film formation quality when film formation of a plurality of layers is performed in a film formation apparatus.
[Solution] A film forming apparatus includes an evaporation source unit that forms a film on a substrate while moving. The evaporation source unit includes a first evaporation source, a second evaporation source, and a third evaporation source that emit deposition materials, respectively. In the direction of movement of the evaporation source unit during film formation, the first evaporation source, the second evaporation source, and the third evaporation source are arranged in this order. The distance between the 1st evaporation source and the 2nd evaporation source in a moving direction is longer than the distance between the 2nd evaporation source and the 3rd evaporation source in a moving direction.

Description

Film formation apparatus and film formation method {FILM FORMING APPARATUS AND FILM FORMING METHOD}

The present invention relates to a film forming apparatus.

In the manufacture of organic EL displays and the like, deposition materials released from an evaporation source adhere to a substrate to form a thin film on the substrate. Patent Literature 1 proposes using a plurality of evaporation sources to deposit a plurality of types of evaporation materials on a substrate.

Patent Document 1: Japanese Unexamined Patent Publication No. 2016-196684

In the film forming apparatus, it is conceivable to form a plurality of layers (for example, two layers). In such a case, it is desirable to suppress deterioration in film formation quality due to, for example, mixing of the first layer deposition material and the second layer deposition material.

SUMMARY OF THE INVENTION The present invention provides a technique for suppressing deterioration in film formation quality when film formation of a plurality of layers is performed in a film formation apparatus.

According to one aspect of the present invention,

A film forming apparatus having an evaporation source unit that forms a film on a substrate while moving, comprising:

The evaporation source unit includes a first evaporation source, a second evaporation source, and a third evaporation source that emit deposition materials, respectively;

In the moving direction of the evaporation source unit during film formation, the first evaporation source, the second evaporation source, and the third evaporation source are arranged in this order,

A distance between the first evaporation source and the second evaporation source in the moving direction is longer than a distance between the second evaporation source and the third evaporation source in the moving direction. .

ADVANTAGE OF THE INVENTION According to this invention, the degradation of the film-forming quality can be suppressed when film-forming of multiple layers is performed in a film-forming apparatus.

1 is a plan view schematically showing the configuration of a film forming system according to an embodiment.
2 is a plan view schematically showing the configuration of a film forming apparatus according to an embodiment.
FIG. 3 is a front view of the film forming apparatus of FIG. 2 .
A diagram for explaining the configuration of the evaporation source unit of FIG. 4, which is a schematic view of the evaporation source unit viewed from the side.
5 : is a schematic plan view for demonstrating the positional relationship of an evaporation source and a monitoring device.
6 is a diagram for explaining the arrangement of evaporation source units.
7 is an explanatory view of the operation of the film forming apparatus in the film forming process.
8 is a front view schematically showing the configuration of a film forming apparatus according to an embodiment.
9 is an explanatory view of the operation of the film forming apparatus in the film forming process.
10 is an explanatory view of the operation of the film forming apparatus in the film forming process.
11 is an explanatory view of the operation of the film forming apparatus in the film forming process.
12 is an operation explanatory diagram in the film forming process of the film forming apparatus.
13 is a front view schematically showing the configuration of a film forming apparatus according to an embodiment.
14 is an operation explanatory diagram in the film forming process of the film forming apparatus.
15 is an operation explanatory diagram in the film forming process of the film forming apparatus.
16 is a diagram for explaining the configuration of the evaporation source unit, and is a schematic view of the evaporation source unit viewed from the side.
17(A) is an overall view of the organic EL display device, and 17(B) is a diagram showing a cross-sectional structure of one pixel.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment is described in detail with reference to an accompanying drawing. On the other hand, the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiment, not all of these plurality of features are necessarily essential to the invention, and a plurality of features may be combined arbitrarily. In addition, in the accompanying drawings, the same reference numerals are given to the same or similar structures, and redundant explanations are omitted.

<First Embodiment>

(Overview of the Tabernacle System)

1 is a plan view schematically illustrating the configuration of a film forming system SY in which a film forming apparatus 1 according to an embodiment is installed. The film formation system SY is a system that performs a film formation process on a substrate carried in and carries out the substrate after the process. For example, a manufacturing line of an electronic device is constituted by arranging and installing a plurality of film forming systems SY. As an electronic device, the display panel of the organic electroluminescent display device for smartphones is mentioned, for example. In addition to the film forming apparatus 1 , the film formation system SY includes a carrying-in room 60 , a substrate transfer room 62 , a carrying-out room 64 , and a mask storage room 66 . Meanwhile, the configuration of the film forming apparatus 1 will be described later.

The substrate 100 on which film formation is performed in the film formation apparatus 1 is carried into the carrying room 60 . In the substrate transfer room 62 , a transfer robot 620 that transfers the substrate 100 is installed. The transfer robot 620 transfers the substrate 100 carried into the transfer room 60 to the film forming apparatus 1 . Further, the transport robot 620 transports the substrate 100 on which the film forming process has been completed in the film forming apparatus 1 to the carrying out chamber 64 . The substrate 100 transported by the transport robot 620 to the transport chamber 64 is transported from the transport chamber 64 to the outside of the film forming system SY. On the other hand, when a plurality of film formation systems SY are arranged and installed, the transfer chamber 64 of the film formation system SY on the upstream side may also serve as the substrate transfer room 62 of the film formation system SY on the downstream side. . Also, in the mask storage chamber 66 , a mask 101 used for film formation in the film formation apparatus 1 is stored. The mask 101 stored in the mask storage chamber 66 is transported to the film forming apparatus 1 by the transport robot 620 .

The inside of the film forming apparatus 1 constituting the film forming system SY and each chamber is maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. On the other hand, in the present embodiment, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state.

(film formation device)

(outline)

2 is a plan view schematically showing the configuration of a film forming apparatus 1 according to an embodiment. FIG. 3 is a front view of the film forming apparatus 1 of FIG. 2 . Meanwhile, in the drawings below, arrows X and Y indicate horizontal directions orthogonal to each other, and arrow Z indicates a vertical direction (vertical direction).

The film forming apparatus 1 is a film forming apparatus that deposits while moving an evaporation source with respect to a substrate. The film forming apparatus 1 is used for manufacture of the display panel of the organic electroluminescent display device for smartphones, for example, and the production line can be comprised in multiple units. As the material of the substrate on which vapor deposition is performed in the film forming apparatus 1, glass, resin, metal, or the like can be appropriately selected, and a resin layer formed on glass such as polyimide is preferably used. As the deposition material, organic materials, inorganic materials (metals, metal oxides, etc.) and the like are used. The film forming apparatus 1 can be applied to, for example, electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, organic photoelectric conversion elements (organic thin-film imaging elements), manufacturing apparatuses for manufacturing optical members, etc. And, in particular, it is applicable to a manufacturing apparatus for manufacturing an organic EL panel. Further, in the present embodiment, the film forming apparatus 1 forms a film on a glass substrate (1100 mm x 2500 mm, 1250 mm x 2200 mm) of G8H size, but the size of the substrate on which the film forming apparatus 1 performs film formation can be set appropriately. .

The film forming apparatus 1 includes an evaporation source unit 10 , a moving unit 20 , and a plurality of film forming stages 30A and 30B. The evaporation source unit 10, the moving unit 20, and the film formation stages 30A and 30B are disposed inside the chamber 45 maintained in a vacuum during use. In this embodiment, a plurality of film formation stages 30A and 30B are installed at an upper part in the chamber 45 at a distance in the Y direction, and an evaporation source unit 10 and a moving unit 20 are installed below them. Further, the chamber 45 is provided with a plurality of substrate loading inlets 44A and 44B for loading and unloading the substrate 100 .

Further, the film forming apparatus 1 includes a power source 41 that supplies power to the evaporation source unit 10 and an electrical connector 42 that electrically connects the evaporation source unit 10 and the power source 41 . The electrical connector 42 is configured by passing electric wiring through the inside of the arm moving in the horizontal direction, and as will be described later, power from the power source 41 can be supplied to the evaporation source unit 10 moving in the XY direction is supposed to

In addition, the film forming apparatus 1 includes a control unit 43 that controls the operation of each component. For example, the controller 43 may include a processor represented by a CPU, memory such as RAM and ROM, and various interfaces. For example, the control unit 43 realizes various processes by the film forming apparatus 1 by reading programs stored in ROM into RAM and executing them. On the other hand, an aspect in which, for example, a host computer or the like that collectively controls the film forming system SY directly controls the operation of each component of the film forming apparatus 1 is also employable.

Although described in detail later, in the film forming apparatus 1, the evaporation source unit 10 is disposed across the short length direction of the substrate 100 and moves in the long direction of the substrate 100 to form a film.

(Tabernacle Stage)

The film formation stage 30A is a stage in which a film is formed on the substrate 100A. The film formation stage 30A supports the substrate 100A and the mask 101A and adjusts their positions. The film formation stage 30A includes a substrate support portion 32A, a mask support portion 34A, a post 35A, and an alignment mechanism 36A.

The substrate support portion 32A supports the substrate 100A. In this embodiment, the substrate support portion 32A supports the substrate 100A so that the short side of the substrate 100A extends in the Y direction and the long side of the substrate 100A extends in the X direction. Further, the substrate support portion 32A supports the edge of the substrate 100A from the lower side of the substrate 100A. However, the substrate holding portion 32A may support the substrate 100A by holding the edge of the substrate 100A, or may support the substrate 100A by adsorbing the substrate 100A with an electrostatic chuck or an adhesive chuck. For example, the substrate support unit 32A can receive the substrate 100A from the transfer robot 620 in the substrate transfer room 62 . In addition, the substrate support portion 32A can be moved up and down by a lifting mechanism (not shown), and the substrate 100A received from the transfer robot 620 can be overlapped on the mask 101A supported by the mask support portion 34A. . For the elevating mechanism, a known technique such as a ball screw mechanism can be used.

The mask support part 34A supports the mask 101A. In this embodiment, an opening (not shown) is provided in the mask support portion 34A, and the deposition material is scattered on the film formation surface of the substrate 100A overlapping the mask 101A through this opening. Further, the mask support portion 34A is supported by the chamber 45 by the support posts 35A.

The alignment mechanism 36A aligns the substrate 100A and the mask 101A. The alignment mechanism 36A adjusts the relative positions of the substrate support 32A and the mask support 34A in the horizontal direction, so that the substrate 100A supported by the substrate support 32A and the mask supported by the mask support 32 are adjusted. Alignment of 101A is performed. A well-known technique can be used for the alignment of the substrate 100A and the mask 101A, so detailed explanations are omitted. As an example, the alignment mechanism 36A detects alignment marks formed on the substrate 100A and the mask 101A by a camera (not shown). The alignment mechanism 36A has a predetermined relationship between the position of the substrate 100A calculated by the mark formed on the substrate 100A and the position of the mask 101A calculated by the mark formed on the mask 101A. The positional relationship between the substrate 100A and the mask 101A is adjusted so as to satisfy the condition.

When the alignment by the alignment mechanism 36A is completed, the substrate support 32A overlaps the substrate 100A being supported on the mask 101A. Film formation is performed on the substrate 100A by the evaporation source unit 10 in a state where the substrate 100A and the mask 101A are overlapped.

The film formation stage 30B may have a configuration similar to that of the film formation stage 30A. That is, the film formation stage 30B includes a substrate support portion 32B, a mask support portion 34B, a post 35B, and an alignment mechanism 36B, which include a substrate support portion 32A, a mask support portion 34A, and a post 35A. ) and the alignment mechanism 36A, respectively.

The film forming apparatus 1 of this embodiment is a so-called dual stage film forming apparatus 1 having a plurality of film forming stages 30A and 30B. For example, while deposition is being performed on the substrate 100A in the film formation stage 30A, alignment of the substrate 100B and mask 101B can be performed in the film formation stage 30B, so that the film formation process can be performed efficiently. can

(evaporation source unit)

Next, the evaporation source unit 10 will be described. On the other hand, an outline of each element is described here, and a detailed arrangement and operation example will be described later (refer to (Arrangement of evaporation source unit) (Operation example)).

4 : is a figure for explaining the structure of the evaporation source unit 10, and is a schematic diagram which looked at the evaporation source unit 10 from the side (Y direction). 5 : is a schematic plan view for demonstrating the positional relationship of evaporation sources 11a-11r and monitoring devices 12a-12r.

The evaporation source unit 10 discharges a deposition material while moving to form a film on the substrate 100 . In this embodiment, the evaporation source unit 10 includes a plurality of evaporation sources 11a to 11r, a plurality of monitoring devices 12a to 12r, an anti-chak plate 13, a limiting unit 14, a cover unit 15, and It includes shutters 161 to 163.

The plurality of evaporation sources 11a to 11r emit evaporation materials. In this embodiment, each of the plurality of evaporation sources 11a to 11r includes an accommodating portion for accommodating a deposition material. In each accommodating part, an emission part for discharging the evaporated deposition material is formed, respectively. The discharge portion may be, for example, an opening formed on the upper surface of the accommodating portion or a tubular member provided on the upper surface of the accommodating portion and communicating with the inside and outside of the accommodating portion.

The deposition material accommodated in the accommodating portion is heated and evaporated by a heater (not shown), and is discharged into the inner space 450 of the chamber 45 from the discharging portion. On the other hand, as a heater for heating the evaporation material accommodated in the accommodating portion, a sheath heater using an electric heating wire can be used, for example.

In this embodiment, the plurality of evaporation sources 11a to 11r can be divided into three evaporation source groups 17A to 17C spaced apart from each other in the moving direction (X direction) of the evaporation source unit 10 . The evaporation source group 17A includes a plurality of evaporation sources 11a to 11f arranged in a transverse direction (Y direction) crossing the moving direction of the evaporation source unit 10 . The evaporation source group 17B includes a plurality of evaporation sources 11g to 11l arranged in a transverse direction (Y direction) crossing the moving direction of the evaporation source unit 10 . The evaporation source group 17C includes a plurality of evaporation sources 11m to 11r arranged in a transverse direction (Y direction) crossing the moving direction of the evaporation source unit 10 .

In addition, the three evaporation source groups 17A to 17C are arranged in the order of evaporation source group 17A, evaporation source group 17B, and evaporation source group 17C in the moving direction (X direction) of the evaporation source unit 10. there is. That is, paying attention to the evaporation sources included in the evaporation source groups 17A to 17C, the evaporation sources 11a, 11g, and 11m are, for example, in the moving direction (X direction) of the evaporation source unit 10. are arranged in this order.

The plurality of monitoring devices 12a to 12r respectively monitor the emission state of the deposition material from the plurality of evaporation sources 11a to 11r. As shown in the monitoring device 12a in FIG. 4 , the monitoring devices 12a to 12r of the present embodiment include a crystal oscillator 123 as a film thickness sensor inside a case 121 . Deposition materials discharged from the evaporation sources 11a to 11r are introduced and attached to the crystal vibrator 123 through an introduction portion 122 formed in the case 121 . The frequency of the crystal oscillator 123 varies depending on the deposition amount of the deposition material. Therefore, the controller 43 can calculate the film thickness of the deposition material deposited on the substrate 100 by monitoring the frequency of the crystal oscillator 123 . Since the amount of deposition material adhering to the crystal oscillator 123 per unit time has a correlation with the emission amount of deposition material from the evaporation sources 11a to 11r, as a result, the emission state of the deposition material from the plurality of evaporation sources 11a to 11r. can monitor Further, in the present embodiment, by independently monitoring the release state of the deposition material from each of the evaporation sources 11a to 11r by each of the monitoring devices 12a to 12r, based on the result, the respective evaporation sources 11a to 11r The output of each heating part can be more appropriately controlled. Accordingly, the film thickness of the deposition material deposited on the substrate 100 can be effectively controlled.

The anti-fouling plate 13 is a plate that prevents deposition materials discharged from the plurality of evaporation sources 11a to 11r from adhering to the wall of the chamber 45 or the like. The anti-chak plate 13 is provided so as to surround the plurality of evaporation sources 11a to 11r in a planar view while the upper portion is open.

The limiting portion 14 limits the emission range of the deposition materials emitted from the plurality of evaporation sources 11a to 11r. In this embodiment, the restricting portion 14 includes a plurality of plate members 141 to 145 . The plate members 141 and 142 limit the emission range in the X direction of the plurality of evaporation sources 11a to 11f. The plate member 143 limits the emission range in the X direction of the plurality of evaporation sources 11g to 11l. The plate member 144 limits the emission range in the X direction of the plurality of evaporation sources 11g to 11r. The plate member 145 limits the emission range in the X direction of the plurality of evaporation sources 11m to 11r.

In addition, the plate member 141 is provided with tubular members 146a to 146f through which deposition materials scattering to the monitoring devices 12a to 12f pass (Fig. 4 shows the tubular members 146a as a representative of these). is done). The plate member 143 is provided with tubular members 146g to 146l through which deposition materials scattering to the monitoring devices 12g to 12l pass (the tubular member 146g is shown as a representative of these in FIG. 4 ). ). The plate member 145 is provided with tubular members 146m to 146r through which deposition materials scattering to the monitoring devices 12m to 12r pass (the tubular members 146m are shown as representative of these in FIG. 4 ). ).

Here, the height of the opening of the tubular member 146g on the side of the evaporation source 11g is set lower than the upper end of the plate member 144 . Thereby, it is possible to suppress the evaporation material discharged from the evaporation source 11m from reaching the monitoring device 12g via the tubular member 146g. In addition, the height of the opening of the tubular member 146m on the side of the evaporation source 11m is set lower than the upper end of the plate member 144 . Thereby, it can suppress that the evaporation material discharge|released from the evaporation source 11g reaches the monitoring apparatus 12m via the cylindrical member 146m.

The cover portion 15 prevents deposition materials from entering the plate members 141 to 145 and reaching the monitoring devices 12a to 12r. The cover portion 15 includes a cover member 151 covering between the chak-proof plate 13 and the plate member 141, a cover member 152 covering between the plate member 142 and the plate member 143, and A cover member 153 covering between the plate member 145 and the anti-chak plate 13 is included.

The shutters 161 to 163 block scattering of the deposition material onto the substrate 100 . In detail, the shutters 161 to 163 have a blocking position (see FIG. 4) to block scattering of the deposition material emitted from the evaporation source groups 17A to 17C onto the substrate 100, and a substrate of the deposition material ( 100) is installed so that it can be displaced between allowable positions (see Fig. 6) allowing scattering. For example, the shutter 161 has a blocking position for blocking scattering of deposition materials emitted from the evaporation sources 11a to 11f included in the evaporation source group 17A to the substrate, and an evaporation source included in the evaporation source group 17A. It is provided so as to be displaceable between allowable positions allowing scattering of the evaporation material emitted from 11a to 11f onto the substrate. That is, focusing only on the shutter 161, the shutter 161 allows the deposition materials emitted from the evaporation sources 11g to 11r to scatter onto the substrate in the blocking position, while allowing the deposition materials discharged from the evaporation sources 11a to 11f to be emitted. to prevent scattering to the substrate. The same applies to the shutters 162 to 163.

(mobile unit)

Reference is made to FIGS. 2 and 3 again. The moving unit 20 moves the evaporation source unit 10 . That is, the evaporation source unit 10 can form a film on the substrate 100 while being moved by the moving unit 20 . The moving unit 20 includes an X-direction moving unit 22 that moves in the X direction and a Y-direction moving unit 24 that moves the evaporation source unit 10 in the Y-direction.

The X-direction moving unit 22 is a component installed in the evaporation source unit 10, a motor 221, a pinion 222 mounted on a shaft member rotated by the motor 221, and a guide member 223 ). In addition, the X-direction moving unit 22 includes a frame member 224 supporting the evaporation source unit 10, a rack 225 formed on an upper surface of the frame member 224 and engaged with the pinion 222, The guide member 223 includes a guide rail 226 that slides. The evaporation source unit 10 moves in the X direction along the guide rail 226 when the pinion 222 rotating by the drive of the motor 221 engages with the rack 225 .

The Y-direction moving part 24 includes two support members 241A and 241B extending in the Y-direction and spaced apart in the X-direction. The two support members 241A and 241B support the short side of the frame member 224 of the X-direction moving part 22 . The Y-direction moving unit 24 includes a driving mechanism such as a motor not shown and a rack and pinion mechanism, and moves the frame member 224 in the Y-direction with respect to the two supporting members 241A and 241B. By moving to, the evaporation source unit 10 is moved in the Y direction. The Y-direction moving unit 24 moves the evaporation source unit 10 to a position below the substrate 100A supported by the film formation stage 30A and a position below the substrate 100B supported by the film formation stage 30B. Move in the Y direction between

(arrangement of evaporation source unit)

6 : is a figure for demonstrating the arrangement|positioning structure of the evaporation source unit 10. As shown in FIG. FIG. 6 shows emission ranges R1 to R3 of the evaporation sources 11a, 11g, and 11m in the moving direction (X direction) of the evaporation source unit 10. As shown in FIG. On the other hand, although the evaporation sources 11a, 11g, and 11m are shown here, the evaporation sources lb to 11f are the evaporation sources 11a, the evaporation sources 11h to 11l are the evaporation sources 11g, and the evaporation sources 11n to 11r are It may have the same structure as the evaporation source 11m, respectively.

In the present embodiment, the emission range R1 is determined by the positional relationship between the emission portion 110a of the evaporation source 11a and the plate members 141 and 142 of the restriction portion 14 . Further, the emission range R3 is determined by the positional relationship between the emission portion 110g of the evaporation source 11g and the plate members 143 and 144 of the limiting portion 14 . Further, the emission range R3 is determined by the positional relationship between the emission portion 110m of the evaporation source 11m and the plate members 144 and 145 of the limiting portion 14.

Specifically, between the imaginary straight line VL1 passing through the upper end of the emitting part 110a and the plate member 141 and the imaginary straight line VL2 passing through the upper end of the emitting part 110a and the plate member 142. The range of becomes the emission range R1. On the other hand, there may also be deposited materials that scatter outside the geometrically defined emission range R1, but here, the geometrically defined range is referred to as the emission range R1. Similarly, the range between the imaginary straight line VL3 passing through the upper end of the emitting part 110g and the plate member 143 and the imaginary straight line VL4 passing through the upper end of the emitting part 110g and the plate member 144. is the emission range R2. In addition, the range between the imaginary straight line VL5 passing through the emission part 110m and the upper end of the plate member 144 and the imaginary straight line VL6 passing through the emission part 110m and the upper end of the plate member 145. is the emission range R3.

And, when film formation is performed using an evaporation source unit having a plurality of evaporation sources like the evaporation source unit 10 of the present embodiment, a plurality of layers (for example, two layers) are formed on the substrate 100 by one evaporation source unit. You can think of doing the tabernacle.

For example, in the evaporation source unit 10, the evaporation sources 11a to 11f emit lithium fluoride (LiF) or ytterbium (Yb), the evaporation sources 11g to 11l emit magnesium (Mg), and the evaporation sources ( 11m to 11r) releases silver (Ag). Then, a layer of lithium fluoride or ytterbium (first layer) and a layer of silver magnesium (AgMg) (second layer) are formed on the substrate 100 . On the other hand, the above is an example to the last, and there is no limitation about the film-forming material.

However, in such a case, when the first-layer evaporation material and the second-layer evaporation material are mixed, the film formation quality may be deteriorated. Accordingly, in the present embodiment, deterioration in film formation quality due to mixing of deposition materials in film formation of a plurality of layers is suppressed by the following arrangement structure.

That is, in this embodiment, the distance L12 between the evaporation source 11a and the evaporation source 11g in the moving direction (X direction) of the evaporation source unit 10 is the evaporation source 11g in the moving direction. and the distance L23 between the evaporation sources 11 m. This makes it difficult for the emission range R1 of the deposition material by the evaporation source 11a and the emission range R2 of the deposition material by the evaporation source 11g to overlap, so that the first layer of the deposition material and the second layer of the deposition material This becomes difficult to mix, and the deterioration of film formation quality can be suppressed.

On the other hand, here, the distance L12 is the distance between the center of the moving direction (X direction) of the evaporation source 11a and the center of the moving direction (X direction) of the evaporation source 11g. Further, the distance L23 is the distance between the center of the moving direction (X direction) of the evaporation source 11g and the center of the moving direction (X direction) of the evaporation source 11m.

Further, in the present embodiment, when viewed in the transverse direction (Y direction) crossing the moving direction (X direction), the emission angle θ1 of the deposition material of the evaporation source 11a is the emission of the deposition material from the evaporation source 11g It is smaller than the angle θ2. This makes it difficult for the emission range R1 of the deposition material by the evaporation source 11a and the emission range R2 of the deposition material by the evaporation source 11g to overlap, so that the first layer of the deposition material and the second layer of the deposition material This becomes difficult to mix, and the deterioration of film formation quality can be suppressed.

In the present embodiment, the emission angle θ1 of the evaporation source 11a is the side of the evaporation source 11g when viewed from the transverse direction (Y direction) crossing the moving direction (X direction). smaller than the opposite side. In detail, the angle θ11 formed by the virtual vertical line VLc and the virtual straight line VL2 passing through the emission part 110a of the evaporation source 11a is the angle formed by the virtual vertical line VLc and the virtual straight line VL1. It is smaller than (θ12). This makes it difficult for the deposition material emitted from the evaporation source 11a to scatter toward the evaporation source 11g. Therefore, since the emission range R1 of the deposition material by the evaporation source 11a and the emission range R2 of the deposition material by the evaporation source 11g hardly overlap, the first layer of the deposition material and the second layer of the deposition material It becomes difficult to mix, and the deterioration of film-forming quality can be suppressed. On the other hand, in the emission range R1, it can be said that the side of the evaporation source 11g is the inside of the evaporation source unit 10, and the side opposite to the side of the evaporation source 11g is the outside of the evaporation source unit 10.

On the other hand, in the present embodiment, the distance L12 is longer than the distance L23 and the emission angle θ1 is smaller than the emission angle θ2, but a configuration satisfying only one of these is also employable.

In addition, in this embodiment, the emission range R1 of the evaporation source 11a and the emission range R2 of the evaporation source 11g do not overlap in the moving direction (X direction). Specifically, in the height of the film formation surface of the substrate 100, the emission range R1 and the emission range R2 do not overlap in the moving direction (X direction). Thereby, even when all of the shutters 161 to 163 are positioned in the allowable positions, it is possible to suppress mixing of the deposition material discharged from the evaporation source 11a and the deposition material discharged from the evaporation source 11g. Therefore, it is possible to form two layers of film on the substrate 100 in one film formation operation while moving in one direction while suppressing mixing of the deposition material for the first layer and the deposition material for the second layer.

On the other hand, in this embodiment, the emission range R2 of the evaporation source 11g and the emission range R3 of the evaporation source 11m overlap in the moving direction (X direction). Specifically, in the height of the film formation surface of the substrate 100, the emission range R2 and the emission range R3 overlap in the moving direction (X direction). Thereby, co-evaporation can be performed in which a layer of a compound or mixture of the deposition material discharged from the evaporation source 11g and the deposition material discharged from the evaporation source 11r is deposited on the substrate 100 .

In addition, in this embodiment, in the moving direction (X direction), the order of the monitoring device 12a, the evaporation source 11a, the monitoring device 12g, the evaporation source 11g, the evaporation source 11m, and the monitoring device 12m are arranged as That is, the monitoring apparatus 12g is arrange|positioned between the evaporation source 11a and the evaporation source 11g whose distance is longer than between the evaporation source 11g and the evaporation source 11m. Therefore, since the monitoring device 12g is arranged in the space installed to prevent overlapping of the emission range R1 and the emission range R2, the components of the evaporation source unit 10 can be arranged compactly, and the device size can be suppressed. Moreover, since the monitoring apparatuses 12a-12r can be arrange|positioned near the evaporation sources 11a-11r of monitoring object, the fall of the monitoring accuracy of the monitoring apparatuses 12a-12r can be suppressed.

(Operation example)

FIG. 7 is a diagram illustrating the operation of the film forming apparatus 1 in the film forming process, and shows an example of a film forming method using the film forming apparatus 1 . On the other hand, in the initial state (before entering the state ST1), it is assumed that the evaporation source unit 10 is located at the position (x1, y1). As a schematic operation, the evaporation source unit 10 forms a film on the substrate 100A of the film formation stage 30A and then on the substrate 100B of the film formation stage 30B. Incidentally, the evaporation source unit 10 forms a film on the substrate while reciprocating in the X direction (longitudinal direction of the substrate) below the film formation stage 30A and the film formation stage 30B. Here, the evaporation source unit 10 moves film formation while moving in the positive X direction for each substrate once, film formation while moving in the negative X direction once, and moving a total of two times. perform the tabernacle Hereinafter, the first film formation on each substrate is sometimes referred to as a forward direction film formation, and the second film formation is referred to as a reverse direction film formation.

State ST1 is the state after the evaporation source unit 10 performed film-forming in the forward direction with respect to board|substrate 100A. The evaporation source unit 10 performs film formation in the forward direction with respect to the substrate 100A, moving from the position (x1, y1) to the position (x2, y1). In the film formation in this direction, all of the shutters 161 to 163 are positioned at allowable positions. Therefore, for the substrate 100A, after the first layer of film is formed by the evaporation source group 17A on the forward side in the advancing direction, the second layer is formed by the evaporation source groups 17B and 17C on the advancing direction rear side. .

State ST2 is a state after the evaporation source unit 10 has performed film formation in the forward direction with respect to the substrate 100A. The evaporation source unit 10 performs film formation in the bidirectional direction with respect to the substrate 100A while moving from the position (x2, y1) to the position (x1, y1). In film formation in this direction, the shutters 162 to 163 are located in the allowable position, while the shutter 161 is located in the blocking position. Therefore, the second layer is formed on the substrate 100A by the evaporation source groups 17B and 17C.

In this embodiment, film formation of the first layer is performed only in the forward direction, and film formation of the second layer is performed in both the forward direction and the forward direction. Therefore, the film thickness of the second layer can be made thicker with respect to the film thickness of the first layer. In addition, when it is desired to make the film thickness of the first layer and the film thickness of the second layer the same, the shutters 162 to 163 may be positioned at the shut-off positions in the film formation in the forward direction.

In addition, the speed when the evaporation source unit 10 moves in one direction of the movement direction and the speed when moving in the opposite direction may be different. For example, when it is desired to make the film thickness of the second layer thicker than the film thickness of the first layer, the moving speed in the forward direction may be slower than the moving speed in the forward direction. In this way, by appropriately adjusting the moving speed of the evaporation source unit 10, the relative relationship between the film thicknesses of each layer can be adjusted in the film formation of multiple layers.

In addition, in this embodiment, since the evaporation source groups 17B and 17C scatter the evaporation material on the substrate 100A in both the forward direction and the reverse direction, the evaporation material and evaporation source group released from the evaporation source group 17B It is possible to achieve uniformity in the mixing state of the deposition material discharged from 17C in the thickness direction.

In this embodiment, the evaporation source unit 10 moves at a constant speed while the substrate 100A overlaps the emission ranges R1 to R3 in the moving direction. For example, in film formation in the forward direction with respect to the substrate 100A, after the movement starts, the acceleration is finished until reaching the position where the film formation surface of the substrate 100A and the emission range R1 overlap, and the substrate 100A The deceleration starts after passing the position where the film formation surface of and the emission range R3 overlap. In this way, by moving at a constant speed during film formation, the direction of movement of the film to be formed on the substrate 100A can be made uniform. From another aspect, since the evaporation source unit 10 moves at a constant speed during film formation, it can be said that the speed changes when the moving side changes in the moving direction, that is, when returning.

Return to the description of FIG. 7 . State ST3 is a state after the evaporation source unit 10 moves from the film formation stage 30A to the film formation stage 30B. The evaporation source unit 10 is moved in the Y direction from the position (x1, y1) to the position (x1, y2) by the Y-direction moving unit 24 of the moving unit 20. During movement, the shutters 161 to 163 may be positioned in blocking positions to suppress scattering of deposition materials into the chamber 45, or may be positioned in allowable positions in preparation for film formation on the next substrate 100B.

State ST4 is the state after the evaporation source unit 10 performed film-forming in the forward direction with respect to the board|substrate 100B. The evaporation source unit 10 performs film formation in the forward direction with respect to the substrate 100B while moving from the position (x1, y2) to the position (x2, y2). In the film formation in this direction, all of the shutters 161 to 163 are positioned at allowable positions. Therefore, on the substrate 100B, after the first layer is formed by the evaporation source groups 17A on the forward side in the advancing direction, the second layer is formed by the evaporation source groups 17B and 17C on the rear side in the advancing direction. .

State ST5 is a state after the evaporation source unit 10 has performed film formation in the forward direction with respect to the substrate 100B. The evaporation source unit 10 performs film formation in the bidirectional direction with respect to the substrate 100B while moving from the position (x2, y2) to the position (x1, y2). In film formation in this direction, the shutters 162 to 163 are located in the allowable position, while the shutter 161 is located in the blocking position. Therefore, the film formation of the second layer is performed on the substrate 100B by the evaporation source groups 17B and 17C.

State ST6 is a state after the evaporation source unit 10 moves from the film formation stage 30B to the film formation stage 30A. The evaporation source unit 10 is moved in the Y direction from the position (x1, y2) to the position (x1, y1) by the Y-direction moving unit 24 of the moving unit 20. During movement, the shutters 161 to 163 may be positioned in blocking positions to suppress scattering of deposition materials into the chamber 45, or may be positioned in allowable positions in preparation for film formation on the next substrate 100A. After the state ST6, the evaporation source unit 10 returns to the state ST1 to form a film on the next substrate 100A.

In addition, while the film formation on the substrate 100A is being performed in the film formation stage 30A, the carrying in and out of the substrate 100B in the film formation stage 30B and the alignment of the substrate 100B and the mask 101B are properly performed. It runs. In addition, while the film formation on the substrate 100B is being performed in the film formation stage 30B, carrying in and out of the substrate 100A and aligning the substrate 100A and the mask 101A are appropriately performed in the film formation stage 30A. do.

As described above, according to the present embodiment, a decrease in film formation quality can be suppressed when film formation of a plurality of layers is performed in the film formation apparatus.

<Second Embodiment>

(Overview of Film Formation Equipment)

8 is a front view schematically showing the configuration of a film forming apparatus 91 according to an embodiment. In the film forming apparatus 91 of FIG. 8 , the evaporation source unit 910 is mainly installed along the longitudinal direction of the substrate, and film formation is performed while the evaporation source unit 910 moves in the short longitudinal direction (Y direction) of the substrate. is different from that of the film forming apparatus 1 of FIG. 2 . Further, the difference is whether the direction in which the plurality of film formation stages are arranged and the direction in which film formation is performed while the evaporation source unit moves are the same or not the same. Hereinafter, the same code|symbol is attached|subjected about the structure similar to 1st Embodiment, and description is abbreviate|omitted.

The film forming apparatus 91 includes an evaporation source unit 910 . The evaporation source unit 910 includes a plurality of evaporation sources 911a to 911r. Meanwhile, in FIG. 8, evaporation sources 911a, 911g, and 911m are shown as representative examples. The evaporation sources 911b to 911f are installed in a line with the evaporation source 911a in the X direction. The evaporation sources 911h to 911l are arranged in a line with the evaporation source 911g in the X direction. The evaporation sources 911n to 911r are provided in a line with the evaporation source 911m in the X direction.

The evaporation source unit 910 is reciprocally movable in the short longitudinal direction (Y direction) of the substrate 100 by the moving unit 920 . Since known technology can be used for the mobile unit 920, detailed descriptions are omitted. As an example, the moving unit 920 includes a moving body 9201 on which a plurality of evaporation sources 911a to 911r are mounted, a rolling element 9202 rotatably supported by the moving body 9201, and not shown. It is a linear guide including a driving part. That is, when driven by a driving unit (not shown) such as a rack and pinion, the movable body 9201 moves along the rail 451 provided on the bottom of the chamber 45 via the rolling body 9202 . Since the movement mechanism of the evaporation sources 911a-911r consists of 1 axis by this structure, the mechanism in the chamber 45 can be simplified.

In addition, in this embodiment, the evaporation source unit 910 has the emission range R91 of the evaporation source 911a and the emission range R92 of the evaporation source 911g similarly to the evaporation source unit 10 of the evaporation source unit 910. There is no overlap in the movement direction (Y direction). That is, the evaporation source unit 910, like the evaporation source unit 10, can suppress the deposition material discharged from the evaporation source (911a) and the deposition material discharged from the evaporation source (911g) from mixing. Therefore, the first layer of deposition materials (evaporation materials discharged from the evaporation sources 911a to 911f) and the second layer deposition materials (deposition materials discharged from the evaporation sources 911g to 911l and deposition materials discharged from the evaporation sources 911m to 911r) ), it is possible to form two layers of film on the substrate 100 in one film formation operation while moving in one direction.

Further, in the present embodiment, shutters 916A and 916B are provided below the film formation stages 30A and 30B, respectively. The shutter 916A has a blocking position below the film formation stage 30A that blocks scattering of the deposition material to the substrate 100A, and Y from that blocking position that allows scattering of the deposition material to the substrate 100A. It is possible to move between allowable positions displaced in the +Y direction. In addition, the shutter 916B has a blocking position below the film formation stage 30B to block scattering of the deposition material to the substrate 100B, and a blocking position allowing scattering of the deposition material to the substrate 100B. It is possible to move between allowable positions shifted in the Y direction +Y side from . As the moving mechanism of the shutters 916A and 916B, a known technique can be used, so description is omitted.

(Operation Example 1)

9 and 10 are diagrams for explaining the operation of the film forming apparatus 91 in the film forming process. Roughly, the evaporation source unit 910 forms a film on the substrate 100A while making one reciprocal movement below the film formation stage 30A, and then forms a film on the substrate 100B while making one reciprocation below the film formation stage 30B. .

State ST901 is an initial state and is a state in which the evaporation source unit 910 is located at the position (POS10) on the -Y side from the film formation stage 30A. At this time, the shutter 916A and the shutter 916B are each in the blocking position.

State ST902 is a state in which the evaporation source unit 910 is forming a film on the substrate 100A while moving in the Y direction +Y side. At this time, the shutter 916A moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916A moves so as not to overlap with the emission range R91 in the Y direction. Therefore, on the substrate 100A, after the first layer is formed by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. A state ST903 is a state in which film formation on the substrate 100A has been completed while the evaporation source unit 910 is moving in the Y direction +Y side.

State ST904 is a state in which the evaporation source unit 910 is forming a film on the substrate 100A while moving in the Y direction -Y side. At this time, the shutter 916A moves in the Y direction -Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916A moves so as to overlap with the emission range R91 in the Y direction. Accordingly, the second layer is formed on the substrate 100A by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. A state ST905 is a state in which film formation on the substrate 100A has been completed while the evaporation source unit 910 is moving in the Y direction -Y side.

State ST906 is a state in which the evaporation source unit 910 is forming a film on the substrate 100B while moving in the Y direction +Y side. At this time, the shutter 916B moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916B moves so as not to overlap with the emission range R91 in the Y direction. Therefore, on the substrate 100B, after the first layer is formed by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. State ST907 is a state in which film formation on the substrate 100B has been completed while the evaporation source unit 910 is moving in the Y direction +Y side.

State ST908 is a state in which the evaporation source unit 910 is forming a film on the substrate 100B while moving in the Y direction -Y side. At this time, the shutter 916B moves in the Y direction -Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916B moves so as to overlap with the emission range R91 in the Y direction. Accordingly, the second layer is formed on the substrate 100B by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. After the state ST908, the process returns to the state ST901, and film formation on the next substrate 100A is performed.

(Operation Example 2)

11 and 12 are diagrams illustrating the operation of the film forming apparatus 91 in the film forming process. Roughly, the evaporation source unit 910 forms films on the substrate 100A and the substrate 100B in this order while moving in the Y direction +Y side.

State ST911 is an initial state, and is a state in which the evaporation source unit 910 is located at the position (POS10) on the -Y side from the film formation stage 30A. At this time, the shutter 916A and the shutter 916B are each in the blocking position.

State ST912 is a state in which the evaporation source unit 910 is forming a film on the substrate 100A while moving in the Y direction +Y side. At this time, the shutter 916A moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916A moves so as not to overlap with the emission range R91 in the Y direction. Therefore, on the substrate 100A, after the first layer is formed by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r.

Status (ST913) is , a state in which film formation on the substrate 100A while the evaporation source unit 910 moves in the Y direction +Y side has been completed. The evaporation source unit 910 continues to move in the Y direction +Y side in order to proceed with film formation on the substrate 100B. Also, at this time, the shutter 916A is located in the allowable position.

State ST914 is a state in which the evaporation source unit 910 is forming a film on the substrate 100B while moving further in the Y direction +Y side. At this time, the shutter 916B moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916B moves so as not to overlap with the emission range R91 in the Y direction. Therefore, on the substrate 100B, after the first layer is formed by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. On the other hand, at this time, the shutter 916A is moving from the allowable position to the blocking position.

A state ST915 is a state in which film formation on the substrate 100B has been completed while the evaporation source unit 910 is moving in the Y direction +Y side. At this time, the shutter 916B is located in an allowable position.

State ST916 is a state in which the evaporation source unit 910 has started to move in the Y-direction -Y side. At this time, the shutter 916B is moving in the Y direction -Y side from the permitted position to the blocking position. Incidentally, the shutter 916B moves in the Y-direction -Y side ahead of the evaporation source unit 910 so that the evaporation material emitted from the evaporation source unit 910 does not reach the substrate 100B.

Thereafter, the evaporation source unit 910 continues to move in the Y direction -Y side, returns to the state ST911, and performs film formation on the next substrate 100A and substrate 100B.

On the other hand, after the film formation of the substrate 100A, while the shutter 916A is in the blocking position (for example, during the state ST914 to the state ST911 of the next cycle), the substrate ( Carrying in and out of 100A, and alignment of substrate 100A and mask 101A are appropriately performed. Further, after the film formation of the substrate 100B, while the shutter 916B is in the blocking position (for example, during the state ST916 to the state ST913 of the next cycle), the substrate 100B in the film formation stage 30B ), and alignment of the substrate 100B and the mask 101B are appropriately performed.

Thus, in the present embodiment, the evaporation source unit 910 forms films on the substrate 100A and the substrate 100B while moving in one direction (Y direction +Y side), and in the opposite direction (Y direction -Y side). While moving to , it returns to the initial position (position of the tabernacle start).

Here, the moving speed of the evaporation source unit 910 may be greater than when returning to the initial position during film formation. This makes it possible to increase the ratio of the film-forming time to the substrate in the film-forming process and increase the thickness of the film formed on the substrate.

<Third Embodiment>

(Overview of Film Formation Equipment)

13 is a front view schematically showing the configuration of a film forming apparatus 991 according to an embodiment. The film forming apparatus 991 of FIG. 3 differs from the film forming apparatus 91 of FIG. 8 mainly in having a third shutter 916C. Hereinafter, the same code|symbol is attached|subjected about the structure similar to 2nd Embodiment, and description is abbreviate|omitted.

The film forming apparatus 991 has three shutters 916A to 916C. The shutter 916A has a blocking position (POS31) below the film formation stage 30A to block scattering of the deposition material onto the substrate 100A of the film formation stage 30A, and scattering of the deposition material to the substrate 100A. It moves between the allowable position (POS32) displaced in the Y-direction -Y side from the cut-off position, which permits. The shutter 916B has a blocking position (POS33) below the film formation stage 30B to block scattering of the deposition material onto the substrate 100B of the film formation stage 30B, and scattering of the deposition material to the substrate 100B. It moves between the allowable position (POS34) displaced in the Y-direction +Y side from the cut-off position, which permits. The shutter 916C moves between the blocking position POS31 and the blocking position POS33. On the other hand, between the blocking position POS31 and the blocking position POS33, an allowable position POS35 allowing scattering of deposition materials to the substrates 100A and 100B is provided.

In the present embodiment, the film forming apparatus 991 performs the film forming process while permitting or blocking scattering of deposition materials onto the substrates 100A and 100B using three shutters 916A to 916C.

(Operation example)

14 and 15 are diagrams for explaining the operation of the film forming apparatus 991 in the film forming process. Roughly, the evaporation source unit 910 forms films on the substrate 100A and the substrate 100B in this order while moving in the Y direction +Y side.

State ST921 is an initial state, and is a state in which the evaporation source unit 910 is located at the position (POS10) on the -Y side from the film formation stage 30A. At this time, the shutters 916A to 916C are positioned at the allowable position POS32, the shutoff position POS33, and the shutoff position POS31, respectively. That is, the substrate 100A is covered by the shutter 916C, and the substrate 100B is covered by the shutter 916B.

State ST922 is a state in which the evaporation source unit 910 is forming a film on the substrate 100A while moving in the Y direction +Y side. At this time, the shutter 916C moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916C moves so as not to overlap with the emission range R91 in the Y direction. Therefore, on the substrate 100A, after the first layer is formed by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. At this time, the shutter 916A also moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916A moves the rear side of the evaporation source unit 910 in the advancing direction so as not to overlap with the emission range R93 in the Y direction.

A state ST923 is a state in which film formation on the substrate 100A has been completed while the evaporation source unit 910 is moving in the Y direction +Y side. The evaporation source unit 910 continues to move in the Y direction +Y side in order to proceed with film formation on the substrate 100B. Also, at this time, the shutter 916A is located at the blocking position (POS31), and the shutter 916C is located at the permitted position (POS35).

State ST924 is a state in which the evaporation source unit 910 is forming a film on the substrate 100B while moving further in the Y direction +Y side. At this time, the shutter 916B moves in the Y direction +Y side in conjunction with the movement of the evaporation source unit 910 . Incidentally, the shutter 916B moves so as not to overlap with the emission range R91 in the Y direction. Accordingly, for the substrate 100B, after the first layer is formed by the evaporation sources 911a to 911f, the second layer is formed by the evaporation sources 911g to 911l and the evaporation sources 911m to 911r. On the other hand, at this time, the shutter 916C also moves in response to the movement of the evaporation source unit 910 in the Y direction +Y side. Incidentally, the shutter 916C moves the rear side of the evaporation source unit 910 in the advancing direction so as not to overlap with the emission range R93 in the Y direction.

State ST925 is a state in which film formation on the substrate 100B has been completed while the evaporation source unit 910 is moving in the Y direction +Y side. At this time, the shutter 916B is located in the allowable position (POS34), and the shutter 916C is located in the blocking position (POS33). That is, in this state, scattering of the deposition material to the substrate 100A and the substrate 100B is blocked.

State ST926 is a state in which the evaporation source unit 910 has started to move in the Y direction -Y side. At this time, the shutters 916B and 916C are moving in the Y direction -Y side. Incidentally, the shutter 916B moves in the Y direction -Y side in association with the evaporation source unit 910 so that the evaporation material emitted from the evaporation source unit 910 does not reach the substrate 100B.

Thereafter, the evaporation source unit 910 continues to move in the Y direction -Y side, returns to the state ST921, and performs film formation on the next substrate 100A and substrate 100B.

In this embodiment, the film formation process is performed using the three shutters 916A to 916C, so that the substrates 100A and 100B are covered with the shutters 916A to 916C in a state in which the deposition material is not scattered to the substrates 100A and 100B. 916C) can ensure a longer period of time covered. Therefore, it is possible to secure a longer period of time for loading and unloading the substrates 100A and 100B or for alignment.

<Example of modification>

Configurations such as the number and shape of evaporation sources can be appropriately changed. For example, the evaporation source unit 10 includes three evaporation source groups 17A to 17C, but may also include two evaporation source groups or four or more evaporation source groups. In addition, the number of evaporation sources included in each evaporation source group can be appropriately changed. In addition, instead of an evaporation source group composed of a plurality of evaporation sources, one evaporation source may be provided extending in a crossing direction intersecting the moving direction of the evaporation source unit 10 . A plurality of emission units spaced apart from each other in the crossing direction may be provided in this one evaporation source. In this way, a plurality of evaporation sources that are long in the crossing direction may be provided at a distance from each other in the moving direction of the evaporation source unit 10 .

Moreover, configurations, such as arrangement|positioning of monitoring devices 12a-12r, can also be changed suitably. 16 : is a figure for explaining the structure of the evaporation source unit 10, and is a schematic diagram which looked at the evaporation source unit from the side. In this example, the monitoring device 12a and the monitoring devices 12b to 12f (not shown) arranged in the Y direction with the monitoring device 12a are connected to the evaporation sources 11a to 11f and the evaporation sources 11g to 11l in the X direction. installed between them. Even with this arrangement, the space provided to prevent the overlapping of the emission range R1 and the emission range R2 can be utilized efficiently.

<Method of manufacturing electronic device>

Next, an example of a manufacturing method of an electronic device will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device as an example of an electronic device will be illustrated. In the case of this example, a plurality of film forming systems SY illustrated in FIG. 1 are installed on the production line.

First, an organic EL display device to be manufactured will be described. Fig. 17(A) is an overall view of the organic EL display device 50, and Fig. 17(B) is a diagram showing a cross-sectional structure of one pixel.

As shown in FIG. 17(A), in the display area 51 of the organic EL display device 50, a plurality of pixels 52 having a plurality of light emitting elements are arranged in a matrix form. Details will be described later, but each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.

Incidentally, the term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 51 . In the case of a color organic EL display device, a pixel 52 is configured by combining a plurality of subpixels of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B emitting different light. has been The pixel 52 is often composed of a combination of three types of sub-pixels: a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but is not limited thereto. The pixel 52 only needs to include at least one type of subpixel, preferably includes two or more types of subpixels, and more preferably includes three or more types of subpixels. As the sub-pixels constituting the pixel 52, for example, a combination of four types of sub-pixels: a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element. may be continued

Fig. 17(B) is a partial cross-sectional schematic diagram taken along line A-B in Fig. 17(A). The pixel 52 includes, on the substrate 53, the first electrode (anode) 54, the hole transport layer 55, and any one of the red layer 56R, the green layer 56G, and the blue layer 56B. It has a plurality of sub-pixels composed of one organic EL element including an electron transport layer 57 and a second electrode (cathode) 58. Among these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) emitting red, green, and blue, respectively.

Moreover, the 1st electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed commonly over a plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in FIG. 17(B), the red layer 56R, the green layer 56G, and the blue layer 56B are formed on the hole transport layer 55 as a common layer over a plurality of sub-pixel regions. It may be formed separately for each region, and furthermore, the electron transport layer 57 and the second electrode 58 may be formed as a common layer over a plurality of sub-pixel regions.

On the other hand, in order to prevent a short between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture or oxygen, a protective layer 60 is provided to protect the organic EL element from moisture or oxygen.

Although the hole transport layer 55 and the electron transport layer 57 are shown as one layer in FIG. 17(B), depending on the structure of the organic EL display element, it may be formed of a plurality of layers having a hole blocking layer or an electron blocking layer. do. In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the first electrode 54 to the hole transport layer 55 is formed between the first electrode 54 and the hole transport layer 55. can form Similarly, an electron injection layer may also be formed between the second electrode 58 and the electron transport layer 57 .

Each of the red layer 56R, the green layer 56G, and the blue layer 56B may be formed as a single light emitting layer or may be formed by laminating a plurality of layers. For example, the red layer 56R may be composed of two layers, the upper layer may be formed of a red light emitting layer, and the lower layer may be formed of a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be formed of a red light emitting layer, and the upper layer may be formed of an electron transport layer or a hole blocking layer. By providing the layer below or above the light emitting layer in this way, there is an effect of improving the color purity of the light emitting element by adjusting the light emitting position in the light emitting layer and adjusting the optical path length.

In addition, although the example of the red layer 56R has been shown here, the same structure may be employed also in the green layer 56G or the blue layer 56B. In addition, the number of layers may be two or more. Furthermore, layers of different materials such as a light emitting layer and an electron blocking layer may be laminated, or layers of the same material may be laminated, for example, two or more light emitting layers are laminated.

Next, an example of a method for manufacturing an organic EL display device will be described in detail. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light emitting layer.

First, a circuit (not shown) for driving an organic EL display device and a substrate 53 on which a first electrode 54 is formed are prepared. Meanwhile, the material of the substrate 53 is not particularly limited, and may be made of glass, plastic, metal, or the like. In this embodiment, as the board|substrate 53, the board|substrate in which the film of polyimide was laminated|stacked on the glass substrate is used.

On the substrate 53 on which the first electrode 54 is formed, a resin layer such as acrylic or polyimide is coated with a bar coat or spin coat, and the resin layer is applied to the portion where the first electrode 54 is formed by a lithography method. An insulating layer 59 is formed by patterning to form an opening. This opening corresponds to a light emitting region in which the light emitting element actually emits light. On the other hand, in the present embodiment, processing is performed on a large-sized substrate until the formation of the insulating layer 59, and a dividing step of dividing the substrate 53 is executed after the formation of the insulating layer 59.

The board|substrate 53 on which the insulating layer 59 was patterned is carried into the 1st film-forming apparatus 1, and the hole transport layer 55 is formed as a layer common to the 1st electrode 54 of a display area. The hole transport layer 55 is formed using a mask having openings for each display area 51 that will ultimately become a panel portion of each organic EL display device.

Next, the substrate 53 on which up to the hole transport layer 55 is formed is carried into the second film forming apparatus 1 . Align the substrate 53 with the mask, place the substrate on the mask, and place the substrate 53 on the hole transport layer 55 in a portion of the substrate 53 where a red-emitting element is disposed (a region where red sub-pixels are formed). , the red layer 56R is formed. Here, the mask used in the second film formation chamber is a high-precision mask in which openings are formed only in a plurality of regions serving as red subpixels among a plurality of regions on the substrate 53 serving as subpixels of the organic EL display device. . As a result, the red layer 56R including the red light emitting layer is formed only in the region to be the red sub-pixel among the regions to be the plurality of sub-pixels on the substrate 53 . In other words, the red layer 56R is not formed in the area to be a blue sub-pixel or the area to be a green sub-pixel among the areas to be a plurality of sub-pixels on the substrate 53, but in the area to be a red sub-pixel. It is formed selectively.

Similar to the film formation of the red layer 56R, the green layer 56G is formed by the third film forming apparatus 1, and the blue layer 56B is further formed by the fourth film forming apparatus 1. After film formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed as a film in the entire display region 51 in the fifth film forming apparatus 1 . The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

The substrate on which up to the electron transport layer 57 is formed is moved to the sixth film forming apparatus 1, and the second electrode 58 is formed. In the present embodiment, in the first film forming apparatus 1 to the sixth film forming apparatus 1, each layer is formed by vacuum deposition. However, the present invention is not limited to this, and the film formation of the second electrode 58 in the sixth film forming apparatus 1 may be performed by sputtering, for example. Thereafter, the substrate on which up to the second electrode 58 is formed is moved to a sealing device, and a protective layer 60 is formed by plasma CVD (sealing step), and the organic EL display device 50 is completed. On the other hand, although the protective layer 60 is formed here by the CVD method, it is not limited thereto, and may be formed by the ALD method or the inkjet method.

The invention is not limited to the above embodiment, and various modifications and changes are possible within the scope of the gist of the invention.

1: Tabernacle device
10: evaporation source unit
11a to 11r: evaporation source
100: substrate
101: mask

Claims (12)

A film forming apparatus having an evaporation source unit that forms a film on a substrate while moving, comprising:
The evaporation source unit includes a first evaporation source, a second evaporation source, and a third evaporation source that emit deposition materials, respectively;
In the moving direction of the evaporation source unit during film formation, the first evaporation source, the second evaporation source, and the third evaporation source are arranged in this order,
A distance between the first evaporation source and the second evaporation source in the moving direction is longer than a distance between the second evaporation source and the third evaporation source in the moving direction. A film forming apparatus having an evaporation source unit that forms a film on a substrate while moving, comprising:
The evaporation source unit includes a first evaporation source and a second evaporation source respectively emitting a deposition material,
The first evaporation source and the second evaporation source are arranged in a direction in which the evaporation source unit moves during film formation,
When viewed in a transverse direction intersecting the moving direction, an emission angle of the deposition material of the first evaporation source is smaller than an emission angle of the deposition material of the second evaporation source. According to claim 1 or 2,
The film forming apparatus, characterized in that the emission range of the deposition material of the first evaporation source and the emission range of the deposition material of the second evaporation source do not overlap in the moving direction. According to claim 1,
The emission range of the deposition material of the first evaporation source and the emission range of the deposition material of the second evaporation source do not overlap in the moving direction,
The film forming apparatus, characterized in that the emission range of the deposition material of the second evaporation source and the emission range of the deposition material of the third evaporation source overlap in the moving direction. According to claim 1 or 2,
The first evaporation source emits a first deposition material,
The second evaporation source emits a second deposition material different from the first deposition material;
The film forming apparatus may further include a shutter that blocks scattering of the first deposition material onto the substrate while permitting scattering of the second deposition material onto the substrate. According to claim 5,
A first speed when the evaporation source unit moves in the first side of the moving direction is different from a second speed when the evaporation source unit moves in a second side opposite to the first side,
The film forming apparatus according to claim 1 , wherein the shutter blocks scattering of the first deposition material onto the substrate while the evaporation source unit is moving to the second side. According to claim 6,
The film deposition apparatus according to claim 1 , wherein scattering of the first deposition material and the second deposition material onto the substrate is allowed while the evaporation source unit is moving to the second side. According to claim 1 or 2,
The film deposition apparatus according to claim 1, wherein the evaporation source unit moves at a constant speed while the emission range of the substrate and the deposition material overlap in the moving direction. According to claim 8,
The film forming apparatus according to claim 1, wherein the speed of the evaporation source unit changes when the moving side in the moving direction changes. According to claim 1,
Further comprising first monitoring means, second monitoring means, and third monitoring means for monitoring discharge states of deposition materials from the first evaporation source, the second evaporation source, and the third evaporation source, respectively;
In the moving direction of the evaporation source unit during film formation, the first monitoring means, the first evaporation source, the second monitoring means, the second evaporation source, the third evaporation source, and the third monitoring means are arranged in the order. A characterized film formation device. A film forming apparatus having an evaporation source unit that forms a film on a substrate while moving, comprising:
The evaporation source unit includes a first evaporation source and a second evaporation source respectively emitting a deposition material,
The first evaporation source and the second evaporation source are arranged in a direction in which the evaporation source unit moves during film formation,
When viewed in a transverse direction intersecting the moving direction, a side of the second evaporation source is smaller than a side opposite to the side of the second evaporation source, when the angle of release of the deposition material of the first evaporation source is smaller. A film forming method characterized by forming a film on a substrate using the film forming apparatus according to any one of claims 1, 2, or 11.