CN1165075C - Chip cleaning device and method - Google Patents

Chip cleaning device and method Download PDF

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Publication number
CN1165075C
CN1165075C CNB011240156A CN01124015A CN1165075C CN 1165075 C CN1165075 C CN 1165075C CN B011240156 A CNB011240156 A CN B011240156A CN 01124015 A CN01124015 A CN 01124015A CN 1165075 C CN1165075 C CN 1165075C
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China
Prior art keywords
wafer
electrical property
water
cleaning
signal
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Expired - Fee Related
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CNB011240156A
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Chinese (zh)
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CN1400637A (en
Inventor
蔡荣辉
曾素玲
庄娟茹
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Silicon Integrated Systems Corp
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Silicon Integrated Systems Corp
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Priority to CNB011240156A priority Critical patent/CN1165075C/en
Publication of CN1400637A publication Critical patent/CN1400637A/en
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Publication of CN1165075C publication Critical patent/CN1165075C/en
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Abstract

The present invention relates to a device and a method for cleaning chips, which aims to continuously monitor the electrical property of water used for cleaning the chips so as to monitor the cleanliness of the chips on line. The device for cleaning chips comprises a water supply device, an electrical property monitoring device and a signal transmission device, wherein the water supply device is used for supplying the water to the surfaces of the chips; the electrical property monitoring device is used for continuously detecting the electrical property of the water used for cleaning the chips so as to transmit an electrical property signal; the water supply device is used for supplying the water to the surfaces of the chips; the electrical property monitoring device is used for continuously detecting the electrical property of the water used for cleaning the chips so as to transmit an electrical property signal the signal transmission device is used for receiving the electrical property signal, transmits a signal for continuously cleaning the chips to the water supply device when the electrical property signal does not reach a defined value, and transmits a signal for stopping cleaning the chips to the water supply device when the electrical property signal reaches the defined value so as to monitor the electrical property of the water used for cleaning the chips. The present invention can directly monitor the cleanliness of the chips on line, avoid the condition that the chips are not clean enough or are excessively clean, and reach highest economical benefit. The present invention can directly monitor the cleanliness of the chips on line, avoid the condition that the chips are not clean enough or are excessively clean, and reach highest economical benefit.

Description

Wafer decontaminating apparatus and method
Technical field
The present invention relates to a kind of wafer decontaminating apparatus and method, particularly a kind of relevant for by monitoring as the electrical property of the water after cleaning, and directly the wafer decontaminating apparatus and the method for the cleanliness factor of monitoring wafer on line.
Background technology
In very lagre scale integrated circuit (VLSIC) (ULSI) processing procedure, wafer enter that high temperature furnace pipe spreads or heat of oxidation processing procedure before, carry out chemical vapour deposition film before or carry out film etching after, all must clean (DI water rinse) and dry (drying) step through chemistry clean (chemical cleaning), deionization, just can make wafer surface reach the requirement of high-cleanness, high (cleanliness), therefore, the wafer cleaning technology is one of key factor that influences the plant-manufactured accepted product percentage of wafer (yield), element quality and reliability.Wherein the purpose of Xi Jinging mainly is dirty (contamination) that is used for removing wafer surface, as particulate (particle), organic substance (organic) and inorganic matter metal ion (metal ions) etc.
The cleaning technology that uses can roughly be divided into two kinds of wet chemistry cleaning technology and physics cleaning technologies at present.The most commonly used with RCA chemistry cleaning technology processing procedure in the wet chemistry cleaning technology, its clean formula is: clean → QDR (quick dump rinse with the SC1 prescription; Get express developed) → clean → QDR → flushing (final rinse) at last with the SC2 prescription.
The physics cleaning technology then mainly is to come clean wafers with physical action, and does not use any chemicals.Wafer is fixed in the scrubbing unit via vacuum cup (vacuum chuck), comes backwash to wash with brush on the wafer surface of high speed rotating, and deionized water hydro-peening wafer surface is arranged simultaneously, mainly can remove the pollution of particulate.
In the clean processing procedure of above-mentioned wafer, the program of using deionized water rinsing or hydro-peening wafer is arranged all.All be cleanliness factor traditionally, promptly with deionized water rinsing or one period set time of hydro-peening wafer with the time control wafer.Therefore situation not enough or that excessively clean might take place to clean.Clean deficiency then can't reach the cleanliness factor of expection, excessively cleans the waste that then can cause on the cost.
Summary of the invention
The objective of the invention is for addressing the above problem, and a kind of wafer decontaminating apparatus and method be provided, but its nationality by continuous monitoring as the electrical property of the water after cleaning, and the cleanliness factor of monitoring wafer on line.
In order to finish purpose of the present invention, the invention provides a kind of wafer decontaminating apparatus, comprising:
One the first arm and one second arm;
One water supply installation is in order to water is supplied to the surface of a wafer via this second arm, with the surface of clean wafers;
One electrical property monitoring device is positioned at the below of above-mentioned wafer, as the electrical property of the water after cleaning, and sends an electrical property signal in order to continuous detecting;
One device for signalling, electrically connect with above-mentioned electrical property monitoring device, in order to receive this electrical property signal, when this electrical property signal does not reach a set value, send one and continue the clean wafers signal to this water supply installation, when this electrical property signal reaches a set value, send one and stop the clean wafers signal to this water supply installation; And
One brushing device is arranged on this first arm, in order to when cleaning this wafer surperficial with water, scrubs this wafer.
Comprising a hydro-peening head, be arranged on this second arm, be connected with this water supply installation.
Comprising a high sonic nozzle, be arranged on this second arm, be connected with this water supply installation.
Comprising an oscillator, be arranged on this second arm and and be connected with this high sonic nozzle; And the fast controller of a high pitch, be connected with this oscillator.
Wherein this water is deionized water.
Wherein this electrical property is an electrical conductivity.
Wherein this electrical property is a resistance value.
The present invention also provides a kind of wafer method of cleaning, comprising:
Clean the surface of a wafer with water by above-mentioned water supply installation; And
Reach the electrical property that has been used as the water after cleaning with the device for signalling continuous monitoring of its electric connection by above-mentioned electrical property monitoring device, when this electrical property does not reach a set value, continue clean wafers, and when this electrical property reaches a set value, stop clean wafers
When cleaning this wafer surperficial with water, scrub this wafer with a brushing device simultaneously.
This water is deionized water.
This electrical property is an electrical conductivity.
This electrical property is a resistance value.
Advantage of the present invention and characteristics are: wafer decontaminating apparatus provided by the invention and method are compared with prior art, clean wafers effectively not only, and, in the program of using deionized water rinsing or hydro-peening wafer, overcome cleanliness factor with the time control wafer, promptly the defective of bringing with deionized water rinsing or the mode of one period set time of hydro-peening wafer avoids taking place to clean situation not enough or that excessively clean.Can reach the cleanliness factor of expection, save cost.Wafer decontaminating apparatus of the present invention is simple in structure, and method is reliably effective.
Description of drawings
Fig. 1 is the schematic appearance of first embodiment of expression wafer decontaminating apparatus of the present invention;
Fig. 2 is the schematic internal view of expression wafer decontaminating apparatus of the present invention;
The method flow diagram that Fig. 3 cleans for expression wafer of the present invention;
Fig. 4 is the schematic appearance of second embodiment of expression wafer decontaminating apparatus of the present invention.
The label declaration of accompanying drawing
10, ablution groove 12, vacuum cup 14, rotating shaft 16, brushing device 20, wafer 30, water supply installation 32, hydro-peening head 40, electrical property monitoring device 50, device for signalling 61, the first arm 62, second arm 71, oscillator 72, high sonic nozzle 73, high pitch speed controller 80, pedestal 100,200, wafer decontaminating apparatus S, electrical property signal R1, continue clean wafers signal R2, stop the clean wafers signal
Embodiment
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
First embodiment
See also Fig. 1,2, they represent the schematic diagram of first embodiment of wafer decontaminating apparatus 100 of the present invention.Wherein Fig. 1 shows the schematic appearance of the wafer decontaminating apparatus 100 of present embodiment, and Fig. 2 shows the schematic internal view of the wafer decontaminating apparatus 100 of present embodiment.
With reference to figure 1,2, label 80 is represented a pedestal, and the element of wafer decontaminating apparatus 100 can be set in pedestal 80; Ablution groove 10 is arranged in the pedestal 80, and in ablution groove 10, be provided with a vacuum cup (vacuumchuck) 12, a rotating shaft 14 (as shown in Figure 2), rotating shaft 14 is connected with vacuum cup 12, can place a wafer 20 on the vacuum cup 12, the high speed rotating by rotating shaft 14 is so that wafer 20 high speed rotating on vacuum cup 12.
Be respectively equipped with a first arm 61 and one second arm 62 in the pedestal 80, at the first arm 61 front ends one brushing device 16 arranged, brushing device 16 can rotate as arrow E, and contacts with wafer 20 on being arranged at vacuum cup 12, in order to scrub the surface of wafer 20 back and forth.And in the first arm 61, keep stepper motor, adjustable spring mechanism and cylinder (not shown), brushing device 16 connects with not shown stepper motor, adjustable spring mechanism and cylinder, and not shown thus stepper motor, adjustable spring mechanism and the cylinder of nationality and can freely moving and rotate.
One hydro-peening head 32 is arranged at second arm, 62 front ends, and keeps stepper motor (not shown) in second arm 62, and not shown thus stepper motor go up to rotate second arm 62 and is arranged at hydro-peening head 32 on second arm 62 in arrow D direction (as shown in Figure 1).
One water supply installation 30 can be supplied to deionized water hydro-peening head 32, and the deionized water of ejection is advanced with the direction of arrow A, B (as shown in Figure 2) in the hydro-peening head 32 then, with the surface of hydro-peening wafer 20.In ablution groove 10, the wafer 20 of high speed rotating is scrubbed by the deionized water hydro-peening and by brushing device 16 simultaneously.
As shown in Figure 2, the wafer decontaminating apparatus 100 of present embodiment comprises above-mentioned water supply installation 30, one electrical property monitoring devices 40, and a device for signalling 50.Electrical property monitoring device 40 is located at the below of ablution groove 10.Can discharge by the below of ablution groove 10 along the direction of arrow C as the water after the clean wafers 20, and arrive electrical property monitoring device 40.But 40 continuous monitorings of electrical property monitoring device have been used as the electrical property of the water after cleaning, and send an electrical property signal S.50 of device for signalling can receive electrical property signal S, when electrical property signal S does not reach a set value, send one and continue clean wafers signal R1, when electrical property signal S reaches a set value, send one and stop clean wafers signal R2 to water supply installation 30 to water supply installation 30.
Fig. 3 shows the flow chart of the wafer method of cleaning of present embodiment.At first wafer is imported.Then with the surface of water clean wafers, continuous monitoring has been used as the electrical property of the water after cleaning.When electrical property does not reach a set value,, continue clean wafers then along " deficiency " route (FAIL).And when electrical property reaches a set value, then along " by " (PASS) route, stop clean wafers, wafer is exported.
As the electrical property of the water after cleaning, with the principle of the cleanliness factor of monitoring wafer, the water that pollution level is different can have different electrical properties to present embodiment by monitoring.The electrical property that is suitable as monitoring does not have certain limitation, so long as pollution level is big and the little water of pollution level, its electrical property is variant to get final product.For example can monitor the electrical conductivity and the resistance value of water.
The foregoing description is general physics cleaning technology program, and the pollutant that institute's desire is removed generally is a particulate.Owing to contain what of particulate in the water, can cause the difference of its electrical property, therefore, if set a set value, whether monitoring reaches this set value as the electrical property of the water that cleans, can judge thus whether the particulate that contains in the water reaches requirement, thereby can learn whether the particle number on the wafer surface reaches requirement, and the cleanliness factor of wafer as can be known.
In the general wet chemistry cleaning technology, the step that washes wafer is carried out, after using the clean wafer of chemicals to remove chemicals residual on the wafer.According to above-mentioned similar principle, contain what of chemical concentration in the water, can cause the difference of electrical property.Therefore, if set a set value, whether monitoring reaches this set value as the electrical property of the water that cleans, can judge thus whether the concentration that contains chemicals in the water reaches requirement, thereby can learn whether the chemical concentration on the wafer surface reaches requirement, and the cleanliness factor of wafer as can be known.Wafer cleaning method and device by present embodiment, owing to installed electrical property monitoring device and device for signalling additional, but continuous monitoring has been used as the electrical property of the water after cleaning, and with electrical property signal feedback (feedback) to water supply installation, whether continue to supply water with decision, perhaps stop to supply water and stopping clean wafers with clean wafers.So, the present embodiment nationality by monitoring as the electrical property of the water after cleaning, can be on line the direct cleanliness factor of monitoring wafer.In this way, can avoid wafer that situation not enough or that excessively clean takes place to clean, can reach the highest economic benefit.
Second embodiment
Fig. 4 shows the schematic appearance of second embodiment of wafer decontaminating apparatus 200 of the present invention, wherein the formation of elements such as the ablution groove in the present embodiment 10, vacuum cup 12, rotating shaft 14, brushing device 16, wafer 20, water supply installation 30, electrical property monitoring device 40, device for signalling 50, the first arm 61, second arm 62, pedestal 80 is all identical with first embodiment with set-up mode, is marked with identical symbol and omits its explanation at this.
Present embodiment is different with first embodiment be in: set up an oscillator (oscillator) 71, one high sonic nozzle (megasonic nozzle) 72 and one high pitch speed controller (megasoniccontroller) 73.
High pitch speed controller 73 excites the molecule of deionized water and can carry out ultrasonic waves for cleaning (ultrasonic cleaning) when cleaning wafer 20 surfaces at deionized water; Oscillator 71 is arranged on second arm 62, and it is as the concussion transfer device of high sonic nozzle 72 with high pitch speed controller 73; The hydro-peening head 32 that high sonic nozzle 72 replaces among first embodiment, it is arranged on second arm 62 and via oscillator 71 and is connected with high pitch speed controller 73.
By above-mentioned formation, the deionized water from high sonic nozzle 72 ejections can carry out ultrasonic cleansing to wafer 20 surfaces; Because other formations of present embodiment are all identical with first embodiment, therefore can discharge by the below of ablution groove 10 as the water after the clean wafers 20, and arrive electrical property monitoring device 40.Electrical property monitoring device 40 can be detected the electrical property as the water after cleaning continuously, and as first embodiment, send an electrical property signal S.50 of device for signalling can receive electrical property signal S, when electrical property signal S does not reach a set value, send one and continue clean wafers signal R1, when electrical property signal S reaches a set value, send one and stop clean wafers signal R2 to water supply installation 30 to water supply installation 30.
The wafer method of cleaning of present embodiment is identical with first embodiment, as shown in Figure 3, omits its explanation at this.
As above-mentioned, present embodiment also can reach the effect of first embodiment.
Though the present invention with the preferred embodiment explanation as above; but it is not that any this area those of ordinary skill is not in breaking away from design of the present invention and scope in order to qualification the present invention; when can doing to change and modify, so protection scope of the present invention is as the criterion with the scope that claims were defined.

Claims (12)

1, a kind of wafer decontaminating apparatus is characterized in that:
Comprise:
One the first arm and one second arm;
One water supply installation is in order to water is supplied to the surface of a wafer via this second arm, with the surface of clean wafers;
One electrical property monitoring device is positioned at the below of above-mentioned wafer, as the electrical property of the water after cleaning, and sends an electrical property signal in order to continuous detecting;
One device for signalling, electrically connect with above-mentioned electrical property monitoring device, in order to receive this electrical property signal, when this electrical property signal does not reach a set value, send one and continue the clean wafers signal to this water supply installation, when this electrical property signal reaches a set value, send one and stop the clean wafers signal to this water supply installation; And
One brushing device is arranged on this first arm, in order to when cleaning this wafer surperficial with water, scrubs this wafer.
2. wafer decontaminating apparatus as claimed in claim 1 is characterized in that: comprising a hydro-peening head, be arranged on this second arm, be connected with this water supply installation.
3. wafer decontaminating apparatus as claimed in claim 1 is characterized in that: comprising a high sonic nozzle, be arranged on this second arm, be connected with this water supply installation.
4. wafer decontaminating apparatus as claimed in claim 3 is characterized in that: comprising an oscillator, be arranged on this second arm and with this high sonic nozzle and be connected; And the fast controller of a high pitch, be connected with this oscillator.
5. wafer decontaminating apparatus as claimed in claim 1 is characterized in that: wherein this water is deionized water.
6. wafer decontaminating apparatus as claimed in claim 1 is characterized in that: wherein this electrical property is an electrical conductivity.
7. wafer decontaminating apparatus as claimed in claim 1 is characterized in that: wherein this electrical property is a resistance value.
8. wafer method of cleaning is characterized in that:
Comprise:
Clean the surface of a wafer with water by water supply installation; And
Reach the electrical property that has been used as the water after cleaning with the device for signalling continuous monitoring of its electric connection by the electrical property monitoring device that is positioned at above-mentioned wafer below, when this electrical property does not reach a set value, continue clean wafers, and when this electrical property reaches a set value, stop clean wafers.
9. wafer method of cleaning as claimed in claim 8 is characterized in that: when cleaning this wafer surperficial with water, scrub this wafer with a brushing device simultaneously.
10. wafer method of cleaning as claimed in claim 8 is characterized in that: this water is deionized water.
11. wafer method of cleaning as claimed in claim 8 is characterized in that: this electrical property is an electrical conductivity.
12. wafer method of cleaning as claimed in claim 8 is characterized in that: this electrical property is a resistance value.
CNB011240156A 2001-08-06 2001-08-06 Chip cleaning device and method Expired - Fee Related CN1165075C (en)

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Application Number Priority Date Filing Date Title
CNB011240156A CN1165075C (en) 2001-08-06 2001-08-06 Chip cleaning device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB011240156A CN1165075C (en) 2001-08-06 2001-08-06 Chip cleaning device and method

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CN1165075C true CN1165075C (en) 2004-09-01

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8051863B2 (en) * 2007-10-18 2011-11-08 Lam Research Corporation Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus
CN106334685B (en) * 2016-10-19 2018-09-21 湖州数康生物科技有限公司 A kind of biochip automated cleaning system
CN106475331A (en) * 2016-11-21 2017-03-08 无锡市伟丰印刷机械厂 A kind of automobile sealing gasket high efficiente callback equipment
CN108648989B (en) * 2018-05-16 2020-12-25 福建北电新材料科技有限公司 Method for cleaning single crystal silicon carbide substrate wafer

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