CN116490040A - Internal connection method of perovskite thin film solar cell - Google Patents
Internal connection method of perovskite thin film solar cell Download PDFInfo
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- CN116490040A CN116490040A CN202210038966.9A CN202210038966A CN116490040A CN 116490040 A CN116490040 A CN 116490040A CN 202210038966 A CN202210038966 A CN 202210038966A CN 116490040 A CN116490040 A CN 116490040A
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Abstract
The invention relates to an inline method of a perovskite thin film solar cell, wherein the internal structure of the perovskite thin film solar cell sequentially comprises a substrate, a bottom conductive layer, a hole transmission layer, a perovskite layer, an electron transmission layer and a top electrode layer from bottom to top, a P1 scribing line, a P2 scribing line and a P3 scribing line are respectively arranged in the perovskite thin film solar cell, the P1 scribing line carries out first laser processing on the bottom conductive layer on the substrate, carries out second laser processing on the hole transmission layer which is not annealed and solidified, so as to obtain a P2 auxiliary scribing line, carries out third laser processing on the electron transmission layer, so as to obtain a P2 scribing line, and carries out fourth laser processing on the top electrode layer so as to obtain a P3 scribing line. The invention overcomes the defect that the P2 scribing process is difficult to control, ensures that the bottom conductive layer is reserved when the P2 scribing can remove the hole transmission layer, prevents the bottom conductive layer from being removed, improves the effectiveness of the interconnection of the perovskite thin film solar cell, and improves the conversion efficiency of the perovskite thin film solar cell.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to an internal connection method of a perovskite thin film solar cell.
Background
In the thin film solar cell industry, common laser interconnection is realized by three laser scribing lines (P1/P2/P3), the P1/P3 realizes insulation among the sub-cells, and the P2 realizes serial connection among the sub-cells. Along with the rapid development of thin film solar cell technology, various novel solar cells appear, and the perovskite solar cells directly refer to the traditional crystalline silicon solar cells due to factors such as high absorption coefficient, higher mobility, longer carrier life and the like.
The internal structure of the perovskite thin film solar cell sequentially comprises a substrate 1', a bottom conductive layer 2' (ITO layer), a hole transport layer 3' (HTL), a perovskite layer 4', an electron transport layer 5' (ETL) and a top electrode layer 6', wherein P1 scribing lines 7', P2 scribing lines 8' and P3 scribing lines 9', P1 scribing lines 7' are respectively arranged on the bottom conductive layer 2', P2 scribing lines 8' are arranged on the electron transport layer 5', and P3 scribing lines 9' are arranged on the top electrode layer 6' from bottom to top. Perovskite thin film solar cells sublimate the traditional PN junction concept, developing a set of unique HTL (hole transport layer) and ETL (electron transport layer) concepts; while the composition of the HTL and ETL layers is chosen to be more than amorphous silicon/CIGS/CdTe. The HTL alone has several tens to hundreds, and in practical production, because the HTL layer or the ETL layer needs to be compact and has high transmittance, the HTL or the ETL layer has very good bonding force with an ITO (indium tin oxide) layer, and simultaneously, the ETL and the HTL have very high transmittance as the ITO layer and very weak laser absorption.
In laser processing the P2 scribe line 8', the process of P2 scribe line is difficult to control. When the laser energy is low, the perovskite layer and the ETL on the upper part can be scored cleanly, but the HTL layer contacted with the ITO is difficult to score, and when the laser power is increased to the state that the HTL can be scored, the ITO layer on the lower part of the HTL is also scored. If the ITO layer is broken or the HTL is not broken, the current flow is shown by the arrowed lines in fig. 1 and 2, respectively. In both cases a large series resistance is introduced, and an increase in the series resistance directly affects the effective extraction of current.
As shown in fig. 1, when the HTL and the ITO layer are all broken when the laser power is high, the contact area between the top electrode layer 6' and the ITO layer is only the thickness a of the ITO layer, which is about 180nm, and is much smaller than 30 micrometers to 80 micrometers designed by the P2 scribe line 8', and the decrease of the contact width of the P2 scribe line 8' leads to an increase of the efficiency loss of the perovskite thin film solar cell.
As shown in fig. 2, when the HTL is not broken with low laser power, the contact resistance between the top electrode layer 6' and the ITO layer increases the resistance of the B portion of the HTL itself, and the sheet resistance of the HTL is between 100 Ω and 1000 Ω, which also results in an increase in the efficiency loss of the perovskite thin film solar cell.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an inline method of a perovskite thin film solar cell, which overcomes the defect that the P2 scribing process is difficult to control, ensures that a bottom conductive layer is reserved when a hole transport layer is removed by P2 scribing, effectively prevents the bottom conductive layer from being removed, improves the inline effectiveness of the perovskite thin film solar cell, and improves the conversion efficiency of the perovskite thin film solar cell.
The invention is realized in this way, and provides an inline method of a perovskite thin film solar cell, wherein the internal structure of the perovskite thin film solar cell sequentially comprises a substrate, a bottom conductive layer, a hole transport layer, a perovskite layer, an electron transport layer and a top electrode layer from bottom to top, a P1 scribing line, a P2 scribing line and a P3 scribing line are respectively arranged in the perovskite thin film solar cell, the P1 scribing line, the P2 scribing line and the P3 scribing line are respectively processed in a laser scribing mode, and the inline method comprises the following steps:
firstly, carrying out first laser processing on a bottom conductive layer on a substrate by using a laser scribing removal mode to obtain a plurality of P1 scribing lines which are mutually spaced, removing the bottom conductive layer at the position of the scribing groove to expose the substrate at the bottom, and dividing the bottom conductive layer into a plurality of side-by-side subareas by the plurality of P1 scribing lines.
Coating a coating liquid containing a hole transport layer material on the bottom conductive layer of the processed P1 scribing line, drying the coating liquid to form a hole transport layer, carrying out second laser processing on the hole transport layer to obtain a plurality of P2 auxiliary scribing lines, removing the hole transport layer at the positions of the scribing grooves to expose the bottom conductive layer at the bottom of the scribing grooves, enabling each P2 auxiliary scribing line to be close to the corresponding position of the P1 scribing line, and then carrying out annealing and curing treatment on the hole transport layer of the processed P2 auxiliary scribing line.
And thirdly, sequentially preparing a perovskite layer and an electron transport layer on the cured hole transport layer, and carrying out laser processing on the electron transport layer for the third time to obtain a plurality of P2 scribing lines, removing the perovskite layer and the electron transport layer at the positions of the scribing grooves to expose the bottom conductive layer at the bottom of the perovskite layer and the electron transport layer, wherein the processing positions of each P2 scribing line are respectively overlapped with the positions of the corresponding P2 auxiliary scribing lines.
And fourthly, preparing a top electrode layer on the electron transmission layer on which the P2 scribing is processed, carrying out fourth laser processing on the top electrode layer to obtain a plurality of P3 scribing lines, removing the top electrode layer at the position of the scribing groove to expose the electron transmission layer at the bottom of the top electrode layer, and respectively enabling each P3 scribing line to be close to the position of the corresponding P2 scribing line to finish the inline processing process.
Compared with the prior art, the internal connection method of the perovskite thin film solar cell can solve the problems that the HTL and the ITO layer have similar properties and are too good in binding force in the existing perovskite thin film solar cell preparation process, and the process is difficult to control during laser scribing removal processing to ensure that the HTL is removed and the ITO layer is not damaged. The series resistance of the perovskite thin film solar cell is affected if the HTL layer is not removed or ITO damage, thereby affecting the efficiency of the perovskite thin film solar cell. After the HTL is prepared by the method, laser processing or mechanical processing is carried out before curing, the HTL layer is scribed and removed completely and then cured, and then the preparation of the perovskite layer and the ETL is continued. Because the absorption of the perovskite layer and the ITO layer to laser is not very easy to remove, the ITO layer can be completely exposed after the third laser processing P2 scribing, so that good contact between the ITO layer and the top electrode layer is ensured, the extraction of generating current is enhanced, and the efficiency of the perovskite thin film solar cell is improved.
Drawings
Fig. 1 is a schematic diagram of the internal structure of a conventional perovskite thin film solar cell, showing a state after an ITO layer is etched;
FIG. 2 is a schematic diagram of the internal structure of another conventional perovskite thin film solar cell, showing the state of the HTL after it has not been etched;
FIG. 3 is a schematic view showing the state of step one of the inline method of the perovskite thin film solar cell of the present invention;
FIG. 4 is a schematic diagram showing the state of step two of the inline process of the perovskite thin film solar cell of the present invention;
FIG. 5 is a schematic view showing the state of step three of the inline process of the perovskite thin film solar cell of the invention;
fig. 6 is a schematic state diagram of step four of the inline method of perovskite thin film solar cell of the invention.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 3 to 6, an embodiment of an inline method of a perovskite thin film solar cell according to the present invention is shown. The internal structure of the perovskite thin film solar cell sequentially comprises a substrate 1, a bottom conductive layer 2, a hole transport layer 3, a perovskite layer 4, an electron transport layer 5 and a top electrode layer 6 from bottom to top. P1 scribe lines 7, P2 scribe lines 8, and P3 scribe lines 9 are provided in the perovskite thin film solar cell, respectively. The P1 scribe line 7, the P2 scribe line 8, and the P3 scribe line 9 are processed by laser scribing.
The method for the inline connection comprises the following steps:
step one, performing first laser processing on the bottom conductive layer 2 on the substrate 1 by using a laser scribing removal mode to obtain a plurality of P1 scribing lines 7 which are mutually spaced, and removing the bottom conductive layer 2 at the positions of the scribing lines to expose the substrate 1 at the bottom. A plurality of P1 scribe lines 7 divide the bottom conductive layer 2 into a plurality of side-by-side sub-regions. Each sub-area is located at a sub-cell. As shown in fig. 3.
And secondly, coating a coating liquid containing a hole transport layer material on the bottom conductive layer 2 of the processed P1 scribing line 7, drying the coating liquid to form a hole transport layer 3, and carrying out secondary laser processing on the hole transport layer 3 to obtain a plurality of P2 auxiliary scribing lines 10, and removing the hole transport layer 3 at the position of the scribing line groove to expose the bottom conductive layer 2 at the bottom of the scribing line groove. Each P2 auxiliary scribe line 10 is close to the corresponding P1 scribe line 7, and then the hole transport layer 3 of the processed P2 auxiliary scribe line 10 is annealed and cured. As shown in fig. 4.
And step three, sequentially preparing a perovskite layer 4 and an electron transport layer 5 on the hole transport layer 3 which is cured. And carrying out laser processing for the third time on the electron transmission layer 5 to obtain a plurality of P2 scribing lines 8, and removing the perovskite layer 4 at the positions of the scribing lines and exposing the bottom conductive layer 2 at the bottom of the electron transmission layer 5. The processing position of each P2 scribe line 8 is respectively overlapped with the position of the corresponding P2 auxiliary scribe line 10. As shown in fig. 5.
The present invention splits the existing P2 scribe 8 into two steps to expect an ideal P2 scribe, leaving the ITO layer with HTL removed. After the HTL coating is completed, the HTL is not annealed, the film layer is still organic, a compact HTL is not formed, and the HTL is not tightly contacted with the ITO layer, and at this time, the second laser processing is performed, so as to obtain the P2 auxiliary scribe 10, at this time, the HTL is well removed, and at the same time, the ITO layer at the bottom of the HTL is not lost due to the selection of very low laser power. This achieves the objects of the invention. The HTL is annealed after the second laser processing is completed, thus ensuring that the HTL has the same characteristics.
Moreover, the third laser machined P2 scribe line 8 is fully coincident with the second laser machined P2 auxiliary scribe line 10. Since the bottom dense HTL layer has been removed, a very inexpensive 808nm laser can be selected for the third laser machining. The band gap of the perovskite layer 4 is 1.4 eV-1.6 eV, and the laser of 806 nm can be completely absorbed by the ETL and the perovskite layer 4 and cannot be absorbed by the ITO layer, so that the ITO layer can be completely exposed and the ITO layer can be prevented from being damaged.
And step four, preparing a top electrode layer 6 on the electron transport layer 5 with the processed P2 scribing line 8. And performing laser processing on the top electrode layer 6 for the fourth time to obtain a plurality of P3 scribing lines 9, and removing the top electrode layer 6 at the positions of the scribing grooves to expose the electron transport layer 5 at the bottom. Each P3 scribe line 9 is close to the corresponding P2 scribe line 8, and the inline processing process is completed. As shown in fig. 6.
Specifically, in the first step, the laser processing device used in the first laser processing is a laser with a wavelength of 532nm nanoseconds or a laser with a wavelength of 532nm picoseconds, and the technological parameters of the first laser processing are as follows: 532nm nanoseconds or 532nm picoseconds, a speed of 2m/s, a frequency of 100KHz, and a power of 8.1 watts.
Specifically, in the second step, the thickness of the film layer of the hole transport layer 3 is 20 nm-100 nm. The laser processing equipment used in the second laser processing is a laser with the wavelength of 532nm picoseconds, and the technological parameters of the second laser processing are as follows: 532nm picoseconds, a speed of 2m/s, a frequency of 70KHz, a power of 0.4 watts, and a line spacing of 100 microns between the P2 auxiliary scribe 10 and the P1 scribe 7. The condition for annealing and curing the hole transport layer 3 was a heating temperature of 150℃and a heating time of 15 minutes.
Specifically, in the third step, the laser processing device used in the third laser processing is a laser with a wavelength of 808nm nanoseconds, and the technological parameters of the third laser processing are as follows: 808nm nanoseconds, a speed of 2m/s, a frequency of 100KHz, and a power of 2.5 watts.
Specifically, in the fourth step, the laser processing device used in the fourth laser processing is a laser with a wavelength of 532nm picoseconds, and the technological parameters of the fourth laser processing are as follows: 532nm picoseconds, a speed of 2m/s, a frequency of 2MHz, a power of 3.5 watts, and a line spacing of 100 microns between the P3 scribe 9 and the P2 scribe 8.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (7)
1. An internal connection method of a perovskite thin film solar cell, wherein the internal structure of the perovskite thin film solar cell sequentially comprises a substrate, a bottom conductive layer, a hole transmission layer, a perovskite layer, an electron transmission layer and a top electrode layer from bottom to top, a P1 scribing line, a P2 scribing line and a P3 scribing line are respectively arranged in the perovskite thin film solar cell, and the P1 scribing line, the P2 scribing line and the P3 scribing line are respectively processed in a laser scribing way, and the internal connection method is characterized by comprising the following steps:
firstly, carrying out first laser processing on a bottom conductive layer on a substrate by using a laser scribing removal mode to obtain a plurality of P1 scribing lines which are mutually spaced, removing the bottom conductive layer at the position of the scribing groove to expose the substrate at the bottom of the scribing groove, and dividing the bottom conductive layer into a plurality of side-by-side subareas by the plurality of P1 scribing lines;
coating a coating liquid containing a hole transport layer material on the bottom conductive layer of the processed P1 scribing line, drying the coating liquid to form a hole transport layer, carrying out second laser processing on the hole transport layer to obtain a plurality of P2 auxiliary scribing lines, removing the hole transport layer at the positions of the scribing grooves to expose the bottom conductive layer at the bottom of the scribing grooves, enabling each P2 auxiliary scribing line to be close to the corresponding position of the P1 scribing line respectively, and then carrying out annealing and curing treatment on the hole transport layer of the processed P2 auxiliary scribing line;
sequentially preparing a perovskite layer and an electron transport layer on the cured hole transport layer, and carrying out laser processing on the electron transport layer for the third time to obtain a plurality of P2 scribing lines, removing the perovskite layer and the electron transport layer at the positions of the scribing grooves to expose the bottom conductive layer at the bottom of the perovskite layer and the electron transport layer, wherein the processing positions of each P2 scribing line are respectively overlapped with the positions of the corresponding P2 auxiliary scribing lines;
and fourthly, preparing a top electrode layer on the electron transmission layer on which the P2 scribing is processed, carrying out fourth laser processing on the top electrode layer to obtain a plurality of P3 scribing lines, removing the top electrode layer at the position of the scribing groove to expose the electron transmission layer at the bottom of the top electrode layer, and respectively enabling each P3 scribing line to be close to the position of the corresponding P2 scribing line to finish the inline processing process.
2. The method of claim 1, wherein in the first step, the laser processing device used for the first laser processing is a laser with a wavelength of 532nm nanoseconds or a laser with a wavelength of 532nm picoseconds, and the process parameters of the first laser processing are as follows: 532nm nanoseconds or 532nm picoseconds, a speed of 2m/s, a frequency of 100KHz, and a power of 8.1 watts.
3. The method for interconnecting perovskite thin film solar cells according to claim 1, wherein in the second step, the thickness of the hole transport layer is 20nm to 100nm.
4. The method for interconnecting perovskite thin film solar cells according to claim 1, wherein in the second step, the laser processing equipment used for the second laser processing is a laser with a wavelength of 532nm picoseconds, and the process parameters of the second laser processing are as follows: 532nm picoseconds, a speed of 2m/s, a frequency of 70KHz, a power of 0.4 watts, and a line spacing of 100 microns between the P2 assist scribe and the P1 scribe.
5. The method for interconnecting perovskite thin film solar cell according to claim 1, wherein in the second step, the condition for annealing and curing the hollow transporting layer is a heating temperature of 150 ℃ for 15 minutes.
6. The method for interconnecting perovskite thin film solar cells according to claim 1, wherein in the third step, the laser processing equipment used in the third laser processing is a laser with a wavelength of 808nm nanoseconds, and the technological parameters of the third laser processing are as follows: 808nm nanoseconds, a speed of 2m/s, a frequency of 100KHz, and a power of 2.5 watts.
7. The method for interconnecting perovskite thin film solar cells according to claim 1, wherein in the fourth step, the fourth laser processing uses laser processing equipment with wavelength of 532nm picoseconds, and the fourth laser processing has the following process parameters: 532nm picoseconds, a speed of 2m/s, a frequency of 2MHz, a power of 3.5 watts, and a line spacing of 100 microns between the P3 scribe and the P2 scribe.
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| CN202210038966.9A CN116490040A (en) | 2022-01-13 | 2022-01-13 | Internal connection method of perovskite thin film solar cell |
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| CN202210038966.9A CN116490040A (en) | 2022-01-13 | 2022-01-13 | Internal connection method of perovskite thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117399801A (en) * | 2023-09-04 | 2024-01-16 | 深圳市丰源升科技有限公司 | Laser etching scribing method of perovskite solar cell |
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- 2022-01-13 CN CN202210038966.9A patent/CN116490040A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117399801A (en) * | 2023-09-04 | 2024-01-16 | 深圳市丰源升科技有限公司 | Laser etching scribing method of perovskite solar cell |
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